一种电子封装用低温焊料及其制备方法

By adding Ti, Ag, and Ga elements to Sn-Bi alloys and employing specific preparation processes, the problems of poor wettability and high brittleness of Sn-Bi solders have been solved. This has enabled reliable brazing and high yield of materials such as SiO2 and Al2O3, meeting the low-temperature welding requirements of electronic packaging and reducing production costs.

CN117260060BActive Publication Date: 2026-07-17BEIJING INST OF NONFERROUS METALS & RARE EARTH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING INST OF NONFERROUS METALS & RARE EARTH
Filing Date
2023-10-23
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing Sn-Bi alloy solders have poor wettability and high brittleness, making them difficult to process and unable to meet the high reliability and low temperature welding requirements of electronic packaging. In particular, the yield is low during the brazing of materials such as SiO2 and Al2O3, and traditional preparation methods are difficult to process into coils and strips.

Method used

By adding appropriate amounts of Ti, Ag, and Ga elements, and combining pre-alloying treatment, secondary alloying, rapid solidification strip making, and online heat treatment processes, a low-temperature solder with Sn content of 45-50 wt%, Ag content of 1.0-2.0 wt%, Ti content of 1.5-2.5 wt%, Ir content of 0.05-0.1 wt%, and Ga content of 0-0.5 wt% was prepared. This improved wettability and fluidity, refined grains, and enhanced plasticity and impact resistance.

Benefits of technology

It has achieved reliable brazing of materials such as SiO2 and Al2O3, reduced welding temperature, reduced weld warping, improved the mechanical properties and yield of the solder joints, simplified the packaging process, and reduced production costs.

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Abstract

本发明涉及一种电子封装用低温焊料及其制备方法,属于电子封装材料技术领域。该焊料中Sn含量45‑50wt%,Ag含量1.0‑2.0wt%,Ti含量1.5‑2.5wt%,Ir含量0.05‑0.1wt%,Ga含量0‑0.5wt%,余量为Bi。采用“预合金化处理‑二次合金化‑快速凝固制带‑在线热处理‑收卷”的工艺流程制备。本发明的电子封装用低温焊料与陶瓷、石英热膨胀系数匹配性好,无需预先金属化和预置中间层即可完成钎焊,可用于直接钎焊SiO2、Al2O3等材料,封装工艺简单高效,且接头都具备良好的机械性能,器件封接后不易发生开裂,成品率高,且制备工艺流程短、有效降低生产成本。
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