Inspection apparatus, method of manufacturing a template, and inspection method

Abstract

Embodiments of the present application relate to an inspection apparatus, a manufacturing method of a template, and an inspection method. The inspection apparatus of the embodiments is an inspection apparatus that performs defect inspection of a sample having a region including a plurality of patterns different in height in a first direction, and includes: an imaging unit; a lens; a focus determination unit; an image acquisition unit; an image synthesis unit that extracts a first portion including a first pattern from a first image among a plurality of images and extracts a second portion including a second pattern from a second image among the plurality of images, and generates a synthesized image including the first portion and the second portion; and a defect determination unit, the first image being captured based on a first target value determined based on first height information related to the first pattern, and the second image being captured based on a second target value determined based on second height information related to the second pattern.

Description

[0001] [Citation of relevant applications]

[0002] This application asserts the benefit of priority based on the priority of the prior Japanese Patent Application No. 2022-99730, filed on June 21, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the present invention relate to an inspection device, a method for manufacturing a template, and an inspection method. Background Technology

[0004] In the manufacture of semiconductor devices, it is sometimes necessary to inspect for defects in stencils with multiple patterns of different heights, as well as in semiconductor devices on which the patterns of the stencils have been transferred. In defect inspection, a method is sometimes used whereby a predetermined area of ​​the object to be inspected is photographed from above, and the multiple patterns contained within the photographed image are compared with each other.

[0005] However, because multiple patterns have different heights, it can be difficult to align the focus with all patterns within an image. For patterns in the image portion where the focus is off, the inspection accuracy decreases. Summary of the Invention

[0006] One embodiment provides an inspection apparatus, a template manufacturing method, and an inspection method capable of performing high-precision defect inspection of multiple patterns with different heights.

[0007] The inspection apparatus of the embodiment is an inspection apparatus for inspecting defects in a sample, the sample having a region comprising a plurality of patterns at different heights from a reference plane in a first direction. The inspection apparatus includes: an imaging unit for photographing the region; a lens; a focus determination unit for determining a plurality of target values ​​related to the relative position of the reference plane and the lens based on height information related to the height; an image acquisition unit for adjusting the relative position of the reference plane and the lens based on the plurality of target values, and for having the imaging unit photograph a plurality of images encompassing the entire region from the first direction; and an image synthesis unit, wherein the plurality of patterns includes a first pattern and a second pattern at a height different from the first pattern, and the image synthesis unit... A first image from the plurality of images extracts a first portion containing the first pattern, and a second image from the plurality of images extracts a second portion containing the second pattern, generating a composite image containing the first portion and the second portion; and a defect determination unit performs a determination related to whether the sample has defects based on the composite image; the first image is taken based on a first target value from the plurality of target values, the second image is taken based on a second target value from the plurality of target values, the first target value is determined based on first height information related to the first pattern from the height information, and the second target value is determined based on second height information related to the second pattern from the height information.

[0008] Based on the aforementioned configuration, an inspection apparatus, a template manufacturing method, and an inspection method capable of performing high-precision defect inspection of multiple patterns with varying heights can be provided. Attached Figure Description

[0009] Figure 1 This is a schematic diagram illustrating an example of the configuration of an inspection device according to an embodiment.

[0010] Figure 2 This is a block diagram that shows an example of the functional configuration of the overall control unit and other components of the inspection device in the implementation method.

[0011] Figure 3 (a) to (c) are schematic diagrams illustrating an example of the configuration of a template for an implementation method.

[0012] Figure 4 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0013] Figure 5 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0014] Figure 6 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0015] Figure 7 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0016] Figure 8 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0017] Figure 9 This is an explanatory diagram illustrating the inspection device inspecting the template according to the embodiments in sequence.

[0018] Figure 10 (a) to (e) are sectional views of a portion of the manufacturing method of the main template in the illustrative embodiment.

[0019] Figure 11 (a) and (b) are cross-sectional views of a portion of the manufacturing method of the template exemplified in the embodiments.

[0020] Figure 12 (a) to (c) are cross-sectional views of a portion of the manufacturing method of the template exemplified in the embodiments.

[0021] Figure 13 (a) to (c) are cross-sectional views of a portion of the manufacturing method of the template exemplified in the embodiments.

[0022] Figure 14 (a) and (b) are cross-sectional views illustrating a portion of the imprinting process of the template using the embodiment.

[0023] Figure 15 (a) and (b) are cross-sectional views illustrating a portion of the imprinting process of the template using the embodiment.

[0024] Figure 16 (a) to (c) are cross-sectional views illustrating a portion of the imprinting process of the template using the embodiment.

[0025] Figure 17 (a) and (b) are cross-sectional views showing an example of the configuration of the semiconductor device according to the embodiment.

[0026] Figure 18 This is a flowchart illustrating an example of the sequence of inspection methods using an inspection apparatus according to an embodiment.

[0027] Figure 19 (a) to (c) are schematic diagrams illustrating an example of the configuration of a template for a variation of the implementation method.

[0028] Figure 20 This is an explanatory diagram illustrating the use of an inspection device to inspect a template of a variation of the implementation method.

[0029] Figure 21 (a) to (d) are partial sectional views of the manufacturing method of the template, illustrating variations of the implementation method.

[0030] Figure 22 (a) and (b) are sectional views illustrating a portion of the imprinting process performed using a template of a variation of the implementation method.

[0031] Figure 23 (a) and (b) are sectional views illustrating a portion of the imprinting process performed using a template of a variation of the implementation method.

[0032] Figure 24 (a) to (c) are sequential cross-sectional views illustrating a portion of the imprinting process performed using a template of a variation of the implementation method.

[0033] Figure 25 (a) and (b) are cross-sectional views showing an example of the configuration of a semiconductor device according to a variation of the implementation.

[0034] Figure 26 This is a block diagram illustrating an example of the functional configuration of the overall control unit of an inspection device in other embodiments, along with other components of the inspection device.

[0035] Figure 27 This is a block diagram illustrating another example of the functional configuration of the overall control unit of the inspection device in other embodiments, along with other components of the inspection device. Detailed Implementation

[0036] The present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the present invention is not limited to the embodiments described below. Additionally, the constituent elements in the following embodiments include elements readily conceived by the industry or substantially the same elements.

[0037] [Implementation Method]

[0038] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings.

[0039] (Example of the configuration of an inspection device)

[0040] Figure 1 This is a schematic diagram illustrating an example of the configuration of the inspection device 1 in the embodiment.

[0041] The inspection device 1 of the embodiment is configured as an optical inspection device for inspecting defects in a sample such as a template TM having multiple patterns at different heights from a reference plane. The optical inspection device irradiates light onto the sample and detects defects and foreign objects in the sample based on the reflected light.

[0042] Templates™ are used, for example, in imprinting processes used in the manufacture of semiconductor devices. In the imprinting process, the pattern of the template™ is transferred onto a resist film or the like on the film to be processed, for the processing of the film.

[0043] like Figure 1 As shown, the inspection device 1 includes an inspection mechanism 10, a general control unit 20, a camera control unit 21, a light source control unit 22, a stage control unit 23, a storage device 31, a display device 32, and an input device 33.

[0044] The inspection mechanism 10 is a physical and mechanical component of the inspection device 1, and includes an imaging unit 11, a light source 12, a stage 13, an illumination lens 14t, an imaging lens 14m, an objective lens 14j, a beam splitter 15, and a drive mechanism 16.

[0045] The stage 13 is configured to hold a template TM, which is the object of inspection. The drive mechanism 16, under the control of the stage control unit 23, drives the stage 13 horizontally and vertically. As a result, the relative position of the template TM placed on the stage 13 with respect to the objective lens 14j is changed.

[0046] Light source 12, such as an argon-ion laser oscillator or a mercury lamp, irradiates the template TM placed on the stage 13 with deep ultraviolet (DUV) light. A high-voltage power supply circuit (not shown) is connected to light source 12. By applying voltage from this high-voltage power supply circuit, light source 12 generates light of the desired wavelength for irradiation.

[0047] Light from light source 12 passes through illumination lens 14t and reaches beam splitter 15. Beam splitter 15 has a reflective surface tilted at approximately 45° relative to illumination lens 14t. The reflective surface of beam splitter 15 reflects light polarized in a predetermined direction and allows light polarized in other directions to pass through.

[0048] As a result, the light irradiated by the illumination lens 14t is reflected toward the template TM on the stage 13. In addition, the light reflected from the template TM and returning to the beam splitter 15 is transmitted toward the imaging unit 11.

[0049] Objective lens 14j is positioned on the template TM side of stage 13, focusing the light reflected by beam splitter 15 onto the observation surface of template TM. Imaging lens 14m images the light reflected from template TM and transmitted through beam splitter 15 onto imaging unit 11.

[0050] The imaging unit 11 is, for example, a camera using a charge-coupled device (CCD) or a complementary metal-oxide-semiconductor (CMOS) image sensor. The imaging unit 11 captures an image obtained by imaging light from the template TM through the objective lens 14j. The image captured by the imaging unit 11 is sent to the overall control unit 20 and stored in the storage device 31.

[0051] The overall control unit 20 is connected to the camera control unit 21, the light source control unit 22, and the stage control unit 23, and generates various control signals and sends them to these control units. Thus, the overall control unit 20 controls the inspection mechanism 10 via the camera control unit 21, the light source control unit 22, and the stage control unit 23, and manages and controls the entire inspection device 1.

[0052] The camera control unit 21, based on instructions from the overall control unit 20, generates a control signal to activate the camera unit 11, causing it to capture an image of a predetermined area including the observation surface of the template TM. The light source control unit 22, based on instructions from the overall control unit 20, generates a control signal to apply voltage to the light source 12 via a high-voltage power supply circuit (not shown), thereby illuminating light. The stage control unit 23, based on instructions from the overall control unit 20, generates a control signal to drive the drive mechanism 16, thereby driving the stage 13.

[0053] The storage device 31 is, for example, an HDD (Hard Disk Drive) or an SSD (Solid State Drive), and functions as an auxiliary storage device for the overall control unit 20. The storage device 31 stores, for example, images captured by the camera unit 11, pattern information of the template TM which is the object to be inspected, various inspection conditions, and thresholds for defect determination.

[0054] The display device 32 is a monitor such as a liquid crystal display (LCD) or an organic EL (Electro-Luminescence) display, which displays images captured by the camera unit 11, pattern information of the template TM, various inspection conditions, and thresholds for defect determination.

[0055] The input device 33 is a keyboard, mouse, or other interface that allows the user of the inspection device 1 to input instructions to the overall control unit 20. The user can input instructions to the inspection device 1, various inspection conditions, and defect judgment thresholds through the input device 33.

[0056] (Example of the overall structure of the control unit)

[0057] Then, use Figure 2 An example of the configuration of the overall control unit 20 included in the inspection device of the embodiment will be described. Figure 2 This is a block diagram showing an example of the functional configuration of the overall control unit 20 in the implementation method and other configurations of the inspection device 1.

[0058] The overall control unit 20 of the embodiment is configured, for example, as a computer equipped with a CPU (Central Processing Unit), ROM (Read Only Memory), and RAM (Random Access Memory). The CPU of the overall control unit 20 implements the functions described below by expanding and executing the control program stored in the ROM or the like in the RAM.

[0059] like Figure 2 As shown, the overall control unit 20 includes an inspection unit 201, an image management unit 202, a display control unit 203, an input receiving unit 204, a design data acquisition unit 205, a focus determination unit 206, an image synthesis unit 207, and a defect judgment unit 208 as functional units.

[0060] The inspection unit 201 sends various control signals to the camera control unit 21, the light source control unit 22, and the stage control unit 23, and controls the inspection mechanism 10 via these control signals to generate images required for defect inspection of the template TM.

[0061] At this time, the inspection unit 201 controls each part of the inspection mechanism 10 based on various inspection conditions input by the user and design data acquired by the design data acquisition unit 205 from the design device 50. As described below, the design data includes pattern information of the template TM, which is the object of inspection. For example, as described above, the template TM has multiple patterns at different heights from the reference plane. Therefore, the inspection unit 201, for example, changes the focal position in the height direction sequentially based on the design data, and simultaneously causes the camera unit 11 to capture multiple images.

[0062] The inspection unit 201 acquires multiple images captured in the manner described above from the camera unit 11. In this way, the inspection unit 201 functions, for example, as an image acquisition unit that acquires multiple images from the camera unit 11.

[0063] The image management unit 202 manages multiple images captured by the camera unit 11, corrected images obtained by the image compositing unit 207 (described later), and composite images obtained by combining these corrected images. Specifically, the image management unit 202 stores the multiple images, corrected images, and composite images in the storage device 31. Furthermore, the image management unit 202 reads these multiple images, corrected images, and composite images from the storage device 31.

[0064] The display control unit 203 controls various displays in the display device 32. Specifically, the display control unit 203, for example, causes the display device 32 to display multiple images, corrected images, and composite images according to instructions from the user. In addition, the display control unit 203 causes the display device 32 to display pattern information of the template TM obtained from the design device 50, as well as various inspection conditions and defect judgment thresholds input from the input device 33.

[0065] The input receiving unit 204 receives instructions to the inspection device 1, various inspection conditions, and defect judgment thresholds input from the input device 33.

[0066] The design data acquisition unit 205 acquires design data of the template TM from the design device 50. The design device 50 is a computer-aided design (CAD) device or the like capable of designing the template TM, and stores the design data of the template TM generated so far. The design data of the template TM includes, for example, pattern information such as the height of multiple patterns formed on the template TM from the reference plane, and the arrangement of the multiple patterns on the reference plane.

[0067] The focus determination unit 206 determines multiple target values ​​related to the relative position of the template TM and the objective lens 14j based on the pattern height information contained in the design data. Furthermore, it determines multiple focal positions in the height direction of the multiple patterns based on these multiple target values. When capturing images of the template TM using the imaging unit 11, multiple images are captured at each focal position, showing that the focus of the imaging unit 11 is aligned with that focal position.

[0068] The image compositing unit 207 combines multiple images to generate a composite image. When generating the composite image, the image compositing unit 207 first corrects the brightness, magnification, and offsets in the horizontal, vertical, and rotational directions of the images captured by the camera unit 11. Then, the image compositing unit 207 combines the corrected images to generate the composite image. Detailed functions of the image compositing unit 207 will be described below.

[0069] The defect determination unit 208 determines whether the synthesized image contains defects based on the defect determination threshold input by the user.

[0070] also, Figure 2 The functional configuration of the general control unit 20 shown is only one example, and the general control unit 20 may also have different functional configurations.

[0071] For example, the overall control unit 20 obtains design data of the template TM from the design device 50, but it is also possible that the user can input design data or pattern information of the template TM from the input device 33. Alternatively, at least one of the storage device 31, the display device 32, and the input device 33 may be built into the overall control unit 20, which is configured as a computer.

[0072] Alternatively, the functions of the overall control unit 20 can be implemented by executing a control program using a general-purpose computer, as described above, or some or all of the functions of the overall control unit 20 can be implemented using an application-specific integrated circuit (ASIC).

[0073] (Example of checking the function of the device)

[0074] Next, use Figures 3-9 A detailed functional example of the inspection device 1 according to the embodiment will be described below. First, a detailed configuration example of the template TM, which is the object of inspection of the inspection device 1, will be described below.

[0075] Figure 3 This is a schematic diagram illustrating an example of the configuration of the template TM for an implementation method. Figure 3 (a) is a three-dimensional view on the reference plane RP of the template TM. Figure 3 (b) is a top view of the reference plane RP. Figure 3 (c) is a cross-sectional view showing the overall structure of the template TM.

[0076] like Figure 3 As shown in (c), the template TM of the embodiment includes, for example, a transparent substrate BA such as quartz. The transparent substrate BA has a mesa portion MS that protrudes toward the front side, which is one side of the transparent substrate BA, and has a reference surface RP. A countersunk hole CN is formed on the back side of the transparent substrate BA. As a result, the center of the back side of the transparent substrate BA is recessed.

[0077] From the reference plane RP of the surface MS, multiple columnar patterns CL (CLa, CLb, CLc...) of varying heights protrude. Furthermore, the following explanation assumes that the reference plane RP is a plane that actually exists on the surface MS as described above; however, the reference plane RP can also be a plane that actually exists outside the surface MS, or it can be an imaginary plane that does not actually exist on the template TM. These columnar patterns CL are, for example, four corner prisms that occupy approximately equal areas on the reference plane RP but have different heights. Additionally, the number of these columnar patterns CL is, for example, around several tens to hundreds.

[0078] Figure 3 (a) and (b) show a portion of the plurality of columnar patterns CL. Figure 3 As shown in (a) and (b), the columnar patterns CLa to CLad of the plurality of columnar patterns CL are arranged in a row, for example, with their heights from the reference plane RP increasing in one direction. The height difference between adjacent columnar patterns CLa to CLad is, for example, a few nm to tens of nm.

[0079] In the direction intersecting the arrangement of columnar patterns CLa to CLd, columnar patterns CLe to CLh, which are adjacent to these columnar patterns CLa to CLd and whose height increases progressively from the reference plane RP, are arranged in a row. The lowest columnar pattern CLe among CLe to CLh protrudes higher from the reference plane RP than the highest columnar pattern CLd among CLa to CLd. The height difference between columnar patterns CLd and CLe is, for example, approximately a few nm to tens of nm.

[0080] In this way, on the reference plane RP of the template TM, multiple columns of columnar patterns CLa~CLd, CLe~CLh, CLI~CLl, CLm~CLp… with heights increasing sequentially in one direction are arranged in a direction that intersects their arrangement direction.

[0081] but, Figure 3 The arrangement order and configuration position of the multiple columnar patterns CL shown in (a) and (b) are only examples. The multiple columnar patterns CL of the template TM may also have different arrangement order or configuration.

[0082] For example, Figures 4-9 An example is shown in the illustration of inspecting a template TM having a plurality of columnar patterns CL as described above using the inspection device 1 of the embodiment. Figures 4-9 This is an explanatory diagram illustrating the inspection device 1 of the embodiments inspecting the template TM.

[0083] like Figure 4 As shown, the Figure 3(b) The 16 columnar patterns CLa~CLp shown fall within the range of each shot taken by the camera unit 11, that is, within the frame FM of the camera unit 11.

[0084] Here, in the optical defect inspection device such as inspection device 1, the focal depth of the light used for inspection is approximately 50 nm to 200 nm, for example, approximately 50 nm. That is, with this focal depth, the range that can be focused in a single image, measured in height, is, for example, within the range of 50 nm to 200 nm. Therefore, there are cases where it is difficult to focus on all of the columnar patterns CLa to CLp that fall within a single image.

[0085] Therefore, the inspection device 1 takes multiple photos of the area containing these columnar patterns CLa to CLp while changing the focal position in the height direction.

[0086] More specifically, when performing defect inspection of the template TM, the focus determination unit 206 of the control inspection device 1's general control unit 20 determines the focus position of multiple aligned camera units 11 in the height direction based on the height information contained in the design data acquired by the design data acquisition unit 205.

[0087] At this point, the focus determination unit 206 calculates the number of focus positions required to align the focus with the upper end of each of the multiple columnar patterns CL. The required number of focus positions, which is the number of times the focus position is changed (number of steps) when photographing the template TM, can be calculated, for example, based on the depth of focus of the light used during inspection, the highest columnar pattern CL, and the lowest columnar pattern CL among the multiple columnar patterns CL.

[0088] By sequentially focusing and capturing multiple images at multiple focal points in a defined height direction, all of the multiple images of the multiple columnar patterns CL are captured in a focused state.

[0089] Furthermore, when the design data is CAD data or the like, the height information can also be represented by the number of layers (levels) of the multiple columnar patterns CL from the reference plane RP. In this case, the focus determination unit 206 can also calculate the height position of each of the multiple columnar patterns CL based on the thickness of one layer.

[0090] Based on information about multiple focal positions determined according to design data, the inspection unit 201 sends a control signal to the stage control unit 23 of the inspection mechanism 10 to drive the drive mechanism 16. The stage control unit 23 controls the drive mechanism 16 according to the instructions from the inspection unit 201, causing the stage 13 to move up and down. This adjusts the focal position of the light incident on the template TM.

[0091] Furthermore, the inspection unit 201 sends a control signal to the stage control unit 23, and simultaneously sends a control signal to the camera control unit 21 of the inspection mechanism 10 to activate the camera unit 11. Following the instructions from the inspection unit 201, the camera control unit 21 activates the camera unit 11 while the stage control unit 23 moves the stage 13 up and down, causing it to capture multiple images IM0 to IM8. Thus, multiple images IM0 to IM8 with their focus aligned at each of the multiple focal positions are acquired.

[0092] Here, image IM0, one of the multiple images IM0 to IM8, is an image captured with the focus pointed near the height of the reference plane RP. Therefore, the focus is not on any of the multiple columnar patterns CLa to CLp contained in image IM0. However, the arrangement of these columnar patterns CLa to CLp can be determined based on image IM0.

[0093] Furthermore, image IM1 is an image captured with the focus on the vicinity of the upper height of columnar patterns CLa and CLb among the multiple columnar patterns CLa to CLp. In other words, in image IM1, the focus is on columnar patterns CLa and CLb among the multiple columnar patterns CLa to CLp contained therein.

[0094] Furthermore, strictly speaking, the focal points are aligned at different heights in column patterns CLa and CLb. However, as long as the height difference between these column patterns CLa and CLb is within the specified depth of focus of the light used for inspection, they can be considered as the focal point being aligned with each of the column patterns CLa and CLb.

[0095] In other words, the state of focus alignment with a given columnar pattern CL refers to, for example, the degree to which the focus is aligned to achieve sufficient accuracy during defect inspection. The sensitivity of the image to achieve the required inspection accuracy can be specified, for example, based on the amount of contrast change in the boundary portions of the columnar pattern CL within the image.

[0096] As described above, the focus determination unit 206 determines, for example, the number of columnar patterns CL that can be aligned with the focus during each image capture based on the performance of the imaging unit 11 and the depth of focus of the light used during inspection, thereby determining the number of focus positions required for inspection. Therefore, the number of columnar patterns CL that are aligned with the focus in one image is independent of the number of focus positions required for inspection. Figure 4 For example, it will vary depending on the performance of the camera unit 11 and the depth of focus of the light used for inspection.

[0097] Similar to image IM1, images IM2 to IM8 are images taken with the focus pointed near the height of the upper end of columnar patterns CLc,CLd, CLe,CLf, CLe,CLf, CLe,CLh, CLi,CLj, CLe,CLl, and CLo,CLp, respectively, among the multiple columnar patterns CLe to CLe.

[0098] Therefore, all images IM1 to IM8 containing multiple columnar patterns CLa to CLp within a single image were captured in a focused state.

[0099] like Figure 5 As shown, the overall control unit 20 of the inspection device 1 combines these images IM0 to IM8. At this time, the overall control unit 20 uses the image IM0, whose focus is not aligned with any of the columnar patterns CL, as the reference image and embeds a portion of each image IM1 to IM8. Figures 6-9 A more detailed explanatory diagram is shown below.

[0100] like Figure 6 As shown, the image compositing unit 207, which includes the control unit 20, corrects for the brightness, magnification, and offsets in the longitudinal, transverse, and rotational directions of the shooting position in image IM1 as needed. The brightness of images IM1 to IM8 may change over time, for example. The shooting position may shift due to vibrations of the stage 13, for example. Before compositing images IM1 to IM8, the image compositing unit 207 corrects for the brightness, magnification, and shooting position offsets.

[0101] Figure 6 In the example, image IM1 experiences a shift in its shooting position along the rotational direction. This shift in shooting position can be determined, for example, based on design data. The image compositing unit 207 corrects this by rotating image IM1 in the opposite direction to the position shift.

[0102] Furthermore, the image compositing unit 207 captures the region containing the upper columnar pattern CL among the multiple columnar patterns CLa to CLp contained in the corrected image IM1. Image IM1 is an image captured with the focus on the upper ends of columnar patterns CLa and CLb. Therefore, the image compositing unit 207 captures the region containing columnar patterns CLa and CLb from image IM1.

[0103] In image IM1, the region to be captured can be determined, for example, based on the design data of template TM. The design data includes, for example, the coordinates of multiple columnar patterns CLa to CLp on the reference plane RP, and the height information associated with these coordinates. Therefore, the image synthesis unit 207 compares the image IM1 taken with the coordinates on the reference plane RP, which includes the columnar patterns CLa and CLb, with the coordinates corresponding to the height information in the height direction, based on the focal point of reference image IM1, and identifies the region to be captured that contains the columnar patterns CLa and CLb.

[0104] The image compositing unit 207 embeds the region containing the columnar patterns CLa, CLb extracted from image IM1 into image IM0, which serves as a reference image. As described above, image IM0 represents a state where the focus of all columnar patterns CLa to CLp is offset. However, the arrangement position of each columnar pattern CLa to CLp can be determined on image IM0, therefore, the arrangement position of the columnar patterns CLa, CLb on image IM0 can be embedded into the region extracted from image IM1.

[0105] like Figure 7 As shown, the image synthesis unit 207 corrects the brightness, magnification, and offset of the shooting position in the image IM2 in the longitudinal and transverse directions and rotation direction. Figure 7 In the example, image IM2 exhibits a shift in shooting position both vertically and horizontally. Image compositing unit 207, for instance, determines this shift based on design data and corrects it by moving image IM2 in the opposite direction to the shift.

[0106] Furthermore, based on the focal position when the image IM2 was captured and coordinates including height information corresponding to that focal position, the image compositing unit 207 extracts the region of the columnar patterns CLa to CLp contained in the corrected image IM2, which contains the columnar patterns CLc and CLd with the focal point aligned to the upper end. The image compositing unit 207 then embeds the region extracted from the image IM2 into the configuration position of the columnar patterns CLc and CLd on the image IM0.

[0107] like Figure 8 As shown, the image synthesis unit 207 corrects the brightness, magnification, and shooting position offset in the image IM3. Figure 8 In the example, image IM3 experiences a shift in its shooting position along the rotational direction. Image compositing unit 207, for example, determines this shift in shooting position based on design data and corrects it by rotating image IM3 in the opposite direction to the shift.

[0108] Furthermore, based on the focal position when the image IM3 was captured and coordinates with height information corresponding to that focal position, the image compositing unit 207 extracts the region of the columnar patterns CLa to CLap contained in the corrected image IM3, including the columnar patterns CLe and CLaf whose focal point is aligned with the upper end. The image compositing unit 207 then embeds the region extracted from the image IM3 into the configuration position of the columnar patterns CLe and CLaf on the image IM0.

[0109] The image compositing unit 207 processes images IM4 to IM7 in the same way. That is, it corrects the brightness, magnification, and shooting position offset of images IM4 to IM7, extracts the area containing the focus-aligned columnar pattern CL from images IM4 to IM7, and embeds it into the corresponding position of image IM0.

[0110] like Figure 9 As shown, the image compositing unit 207 corrects the brightness, magnification, and shooting position offset in the image IM8. Figure 9 In the example, image IM8 did not experience a shift in its shooting position. The image compositing unit 207 determines, for example, whether image IM8 has a shift in its shooting position based on design data. If there is no shift, then only other corrections such as brightness and magnification are performed.

[0111] Furthermore, based on the focal position when the image IM8 was captured and coordinates including height information corresponding to that focal position, the image compositing unit 207 extracts the region of the columnar pattern CLo,CLp with the focal point aligned to the upper end from the plurality of columnar patterns CLa to CLp contained in the corrected image IM8. The image compositing unit 207 embeds the region extracted from the image IM8 into the configuration position of the columnar pattern CLo,CLp on the image IM0.

[0112] In this way, through Figures 6-9 The processing shown generates a composite image with the focus aligned to all of the multiple columnar patterns CLa to CLp. When images IM1 to IM8 are combined on image IM0, since the brightness, magnification, and shooting position offset of each image IM1 to IM8 have been corrected as described above, the brightness difference and position offset of the boundary portions of these images IM1 to IM8 are suppressed.

[0113] also, Figures 6-9 In this example, images IM1 to IM8 are sequentially embedded into image IM0, which serves as the reference image, starting from the lower side of multiple columnar patterns CLa to CLp. However, the embedding order of images IM1 to IM8 is not limited to the example described above, but can be any order.

[0114] The defect determination unit 208 uses the generated composite image to determine whether there are defects in the multiple columnar patterns CLa to CLp.

[0115] At this time, the defect determination unit 208 compares adjacent columnar patterns CL among multiple columnar patterns CLa to CLp with each other, or compares one columnar pattern CL with multiple surrounding columnar patterns CL, in order to determine whether any columnar pattern CL in the template TM is poorly formed, has foreign matter on the template TM, or has other defects.

[0116] Sometimes, a method that compares multiple patterns within a single image to check for defects is called Cell-to-Cell inspection, etc.

[0117] (Template manufacturing method)

[0118] Defect inspection of the template TM using the inspection device 1 of the embodiment is performed, for example, as a step in the manufacturing process of the template TM, with the aim of inspecting the quality of the template TM having multiple columnar patterns CL formed thereon. Hereinafter, using... Figures 10-13 The manufacturing methods of the template TM, which is the object of defect inspection, and the main template TMm used to manufacture the template TM are explained.

[0119] As an example, when creating a template TM, a master template TMm is first created to serve as the original template TM. Multiple templates TM can be created from one master template TMm.

[0120] Figure 10 This is a cross-sectional view of a part of the manufacturing method of the main template TMm, which is an example of an implementation. Figure 10 This is an enlarged sectional view of the surface section MSm of the main template TMm during manufacturing.

[0121] like Figure 10 As shown in (a), a mesa-shaped portion MSm protruding from the surface of the transparent substrate of the master template TMm is formed. The upper surface of the mesa-shaped portion MSm is covered with a mask film such as a chromium film to form a mask pattern 71p having multiple hole patterns 71h. Alternatively, a mask film such as a chromium film (not shown) can also be used to cover the upper surface of the transparent substrate other than the mesa-shaped portion MSm.

[0122] The mesa portion MSm of the transparent substrate is formed, for example, by grinding the transparent substrate using mechanical processing. The multiple hole patterns 71h are formed, for example, by processing the mask film using electron beam or other electron drawing techniques.

[0123] like Figure 10As shown in (b), a resist pattern 81p is formed on the upper surface of the platform MSm, covering a portion of the mask pattern 71p. The resist pattern 81p is formed, for example, by coating a resist film, such as a photosensitive organic film, onto a transparent substrate and exposing a portion of it to light.

[0124] In addition, the surface MSm is processed through the mask pattern 71p exposed from the resist pattern 81p to form a hole pattern HLk reaching a predetermined depth to the surface MSm.

[0125] like Figure 10 As shown in (c), the resist pattern 81p is refined using oxygen plasma or the like. As a result, the ends of the resist pattern 81p on the mask pattern 71p recede, and more of the mask pattern 71p is exposed.

[0126] Furthermore, the mesa surface MSm is processed through the mask pattern 71p exposed from the resist pattern 81p to form a hole pattern HLj reaching a predetermined depth in the mesa surface MSm. Additionally, the already formed hole pattern HLk is processed to a deeper depth. Thus, hole patterns HLj and HLk with different depths are formed in the mesa surface MRs.

[0127] like Figure 10 As shown in (d), the resist pattern 81p is refined by using oxygen plasma, etc., so that the ends of the resist pattern 81p are further recessed, and more of the mask pattern 71p is exposed.

[0128] Furthermore, the mesa surface MSm is processed through the mask pattern 71p exposed from the resist pattern 81p to form a hole pattern HLi reaching a predetermined depth in the mesa surface MSm. Additionally, the already formed hole patterns HLj, HLk are processed further to form hole patterns HLi, HLj, HLk in the mesa surface MSm with progressively increasing depths.

[0129] like Figure 10 As shown in (e), the resist pattern 81p is repeatedly refined, and the mesa MSm is processed to form multiple hole patterns HLa~HLk with progressively increasing depths in the mesa MSm. This produces the master template TMm. Then, the remaining resist pattern 81p and mask pattern 71p are removed.

[0130] also, Figure 10 For ease of explanation, hole patterns HLa~HLk with increasing depth are shown on one cross section. However, the number and configuration of hole patterns HL formed on the main template TMm are arbitrarily determined based on the number and configuration of columnar patterns CL to be formed on the template TM.

[0131] The template TM of the embodiment is manufactured by performing the imprinting process described below using a master template TMm manufactured in this way.

[0132] Figures 11-13 This is a sectional view showing a portion of the manufacturing method of the template TM, which exemplifies the embodiments in sequence. Figures 11-13 This is an enlarged sectional view of the table surface MS of the template TM during manufacturing.

[0133] like Figure 11 As shown in (a), on the transparent substrate BA of the template TM (reference) Figure 3 (c) A mesa portion MS protruding from the surface is formed, and the upper surface of the mesa portion MS is covered by a resist film 82. Alternatively, a mask film such as a chromium film (not shown) can be used to cover the upper surface of the transparent substrate BA, excluding the mesa portion MS.

[0134] The mesa surface MS of the transparent substrate BA is similar to that of the main template TMm, and is formed, for example, by grinding the transparent substrate BA using mechanical processing. The resist film 82 is formed, for example, by applying the resist material using spin coating or by drop-feeding the resist material using inkjet printing, and is a photocurable resin film that is cured by irradiation with ultraviolet light. At this point, the resist film 82 is in an uncured state.

[0135] In order to transfer the hole pattern HLa~HLk of the main template TMm onto the resist film 82, the side with the hole pattern HLa~HLk is facing the template TM side, so that the main template TMm and the resist film 82 are facing each other.

[0136] like Figure 11 As shown in (b), the hole pattern HLa~HLk of the main template TMm is pressed against the resist film 82 on the stage surface MS. At this time, in order to prevent the stage surface MSm of the main template TMm from contacting the stage surface MS of the template TM, a small gap is set between the stage surfaces MSm and MS.

[0137] Thus, a portion of the resist film 82 is filled into the hole pattern HLa~HLk of the master template TMm. In this state, if the master template TMm is kept pressed against the resist film 82 and exposed to ultraviolet light or other light transmitted through the master template TMm, the resist film 82 will harden.

[0138] like Figure 12 As shown in (a), if the master stencil TMm is removed, a resist pattern 82p is formed with the hole patterns HLa to HLk of the master stencil TMm transferred thereon. As described above, since the resist film 82 is hardened with a gap provided between the mesa surface MSm of the master stencil TMm and the mesa surface MS of the stencil TM, the resist pattern 82p has a resist residue 82r that connects the bottom of each transferred pattern.

[0139] like Figure 12As shown in (b), the resist residue 82r at the bottom of each pattern is removed using oxygen plasma or the like. Furthermore, the mesa surface MS is processed through the resist pattern 82p. As a result, the film thickness of the resist pattern 82p continuously decreases, and the upper surface of the mesa surface MS exposed from the resist pattern 82p is removed, forming multiple columnar patterns CLa~CLk with the resist pattern 82p transferred onto it.

[0140] If the MS surface is further processed through the resist pattern 82p, then the thinnest resist pattern 82p on the columnar pattern CLa will disappear.

[0141] like Figure 12 As shown in (c), the surface of the platform MS is then processed further through the resist pattern 82p. As a result, the upper surface of the platform MS exposed from the resist pattern 82p is continuously removed, and the protrusion of the multiple columnar patterns CLb to CLk from the upper surface of the platform MS relatively increases. Furthermore, the resist pattern 82p on the columnar pattern CLb disappears.

[0142] On the other hand, in the columnar pattern CLa exposed after the disappearance of the resist pattern 82p, the upper end is removed, and compared with the other columnar patterns CLb to CLk, the amount of protrusion from the upper surface of the platform MS is smaller.

[0143] like Figure 13 As shown in (a), the surface of the mesa (MS) is further processed through the resist pattern 82p. As a result, the upper surface of the mesa exposed from the resist pattern 82p is continuously removed, and the protrusion of the multiple columnar patterns CLc to CLk from the upper surface of the mesa increases relatively. Furthermore, the resist pattern 82p on the columnar pattern CLc disappears.

[0144] On the other hand, in the columnar pattern CLb exposed after the removal of the resist pattern 82p, the upper end is removed, and compared to the other columnar patterns CLc to CLk, the amount of protrusion from the upper surface of the platform MS is smaller. Furthermore, in the columnar pattern CLa, the upper end is further removed, and compared to the columnar pattern CLb, the amount of protrusion from the upper surface of the platform MS is smaller.

[0145] like Figure 13 As shown in (b), the surface MS is then further processed through the resist pattern 82p. As a result, the amount of protrusion of multiple columnar patterns CL from the upper surface of the surface MS increases relatively, while the resist pattern 82p disappears continuously in the order of film thickness from thin to thick, and more columnar patterns CL are exposed.

[0146] like Figure 13As shown in (c), by continuing the processing as described above, multiple columnar patterns CLa to CLk are formed, with the protrusion increasing sequentially from the columnar pattern CLa toward the columnar pattern CLk from the upper surface of the platform MS. Furthermore, the surface of the platform MS exposed at this time corresponds to the reference surface RP.

[0147] Here, Figures 11-13 For ease of explanation, columnar patterns CLa to CLk with continuously increasing height are shown on a single cross-section. However, the number and arrangement of columnar patterns CL formed on the template TM are arbitrary, and the template TM may, for example, have the aforementioned... Figure 3 Its composition or other components.

[0148] Then, for the multiple completed columnar patterns CL, the aforementioned... Figures 4-9 The inspection method shown utilizes the inspection apparatus 1 of the embodiment to perform defect inspection. When a defect is detected in any one of the plurality of columnar patterns CL during defect inspection, its template TM is determined to be defective and discarded or reworked. When no defect is detected during defect inspection, its template TM is considered good and used in the manufacture of the semiconductor device described later.

[0149] The template TM for the implementation method is created through the above operations.

[0150] Furthermore, the method for manufacturing the template TM described above is merely one example, and the template TM of the embodiment can also be manufactured using methods other than those described. For example, the template TM can also be manufactured without using the main template TMm, regardless of the example described above.

[0151] In this case, for example, multiple columnar patterns CL can be directly drawn on the mesa surface MS of the transparent substrate BA using an electron beam or the like. Alternatively, multiple columnar patterns CL can be formed by etching using a mask pattern using a chromium film or the like, and a resist pattern using a resist film or the like.

[0152] (Example of template usage)

[0153] Next, use Figures 14-16 An example of the use of the template TM in the embodiment will be described. As described above, the template TM is used, for example, during the imprinting process in the manufacturing process of a semiconductor device. Therefore, the following description... Figures 14-16 The processing is performed, for example, as a step in the manufacturing process of a semiconductor device.

[0154] Figures 14-16 This is a cross-sectional view illustrating a portion of the imprinting process of the template TM using the implementation method.

[0155] like Figure 14As shown in (a), a film to be processed, PF, is formed on a substrate film UF as the object of the imprinting process. The substrate film UF can be part of a silicon substrate, or it can be an insulating film such as a silicon oxide film formed on a silicon substrate. The film to be processed, PF, can also be, for example, a multilayer film formed by alternating layers of insulating layers such as silicon oxide layers and insulating layers such as silicon nitride layers.

[0156] A resist film 83 is then formed on the processed film PF. The resist film 83, like the resist film 82, is formed, for example, by coating or dripping a resist material, such as a photocurable resin before curing.

[0157] In order to transfer the multiple columnar patterns CL of the template TM to the resist film 83, the side with the columnar patterns CL is facing the side of the film to be processed PF, so that the template TM and the resist film 83 are facing each other.

[0158] like Figure 14 As shown in (b), the columnar pattern CL of the template TM is pressed against the resist film 83 on the film to be processed PF. At this time, in order to prevent the platform surface MS of the template TM from contacting the film to be processed PF, a small gap is set between the columnar pattern CLk with the largest protrusion and the film to be processed PF.

[0159] In this state, if the template TM is kept pressed against the resist film 83 and the resist film 83 is irradiated with ultraviolet light or other light that passes through the template TM, then the resist film 83 will harden.

[0160] like Figure 15 As shown in (a), if the template TM is removed, a resist pattern 83p is formed with the columnar pattern CL of the template TM transferred on it. As described above, since the resist film 83 is hardened with a gap between the template TM and the film to be processed PF, the resist pattern 83p has a resist residue 83r at the bottom of the pattern with the deepest hole in the transferred pattern.

[0161] Here, if photolithography is used, it is difficult to comprehensively form a resist pattern with multiple patterns of different depths in the resist film, such as resist pattern 83p. Therefore, processes such as multiple exposure and development are necessary.

[0162] As described above, using the technique of using template™, multiple patterns with different depths in the resist film 83 are formed on the resist film 83 by a single imprinting process.

[0163] like Figure 15 As shown in (b), the resist residue 83r at the bottom of the deepest pattern of the hole is removed using oxygen plasma or the like. As a result, the upper surface of the processed film PF is exposed at the bottom of the deepest pattern of the hole.

[0164] Furthermore, when the workpiece PF is processed through the resist pattern 83p, the workpiece PF exposed from the resist pattern 83p is removed, forming a hole CHk with the deepest resist pattern 83p transferred therein. Additionally, the film thickness of the resist pattern 83p decreases, and the workpiece PF is re-exposed from the bottom of the pattern adjacent to the deepest hole.

[0165] like Figure 16 As shown in (a), the film PF is then processed further through the resist pattern 83p. As a result, the upper surface of the film PF exposed from the resist pattern 83p is removed, forming a hole CHj. The depth of CHk in the film PF further increases. Furthermore, the film thickness of the resist pattern 83p decreases, and the film PF is exposed again from the bottom of the pattern adjacent to the hole CHj.

[0166] like Figure 16 As shown in (b), the film PF is then processed further through the resist pattern 83p. As a result, the depth of the multiple holes CH in the film PF is further increased, and the film PF is continuously exposed from the bottom of the pattern transferred by the template TM in the order from deep to shallow, forming new holes CH.

[0167] like Figure 16 As shown in (c), by continuing the processing as described above, multiple pores CHa to CHk with depths increasing sequentially from pore CHa to pore CHk are formed in the processed film PF. Then, the residual resist pattern 83p is removed.

[0168] The above steps complete the imprinting process using the template™.

[0169] Furthermore, during the imprinting process, for example, when the angular columnar pattern CL of the template TM is transferred to the resist film 83, it can also be transferred into a shape with rounded corners. Additionally, when multiple holes CH are formed in the processed film PF using the resist pattern 83p, they can also be processed into a shape with rounded corners for the holes CH.

[0170] (Example of a semiconductor device configuration)

[0171] Next, use Figure 17 An example of applying the hole CH formed using the template TM of the embodiment to a semiconductor device will be described.

[0172] Figure 17 This is a cross-sectional view showing an example of the configuration of a semiconductor device MDV according to an embodiment. Figure 17 (a) is a cross-sectional view showing the schematic configuration of the semiconductor device MDV according to the embodiment. Figure 17 (b) is an enlarged cross-sectional view of the support PL of the semiconductor device MDV. Furthermore, in Figure 17 In (a), the shading has been omitted to improve the visibility of the attached figure.

[0173] like Figure 17 As shown in (a), the semiconductor device MDV sequentially comprises a peripheral circuit CUA, a source line SL, and a stacked body LM on a substrate SB, such as a silicon substrate. The peripheral circuit CUA includes transistors TRT and the like formed on the substrate SB, which facilitates the electrical operation of the memory cell described later. The peripheral circuit CUA is covered by an insulating film 51, such as a silicon oxide film. The source line SL, which serves as a conductive polysilicon layer, is formed on the insulating film 51.

[0174] The stacked body LM on the source line SL is composed of multiple word lines WL stacked together. The word lines WL are, for example, tungsten layers or molybdenum layers. The number of word lines WL stacked together is, for example, several tens to hundreds. Figure 17 Although the illustration is omitted in (a), an insulating layer such as a silicon oxide layer is placed between the multiple word lines WL (see reference). Figure 17 (b)).

[0175] The multilayer assembly LM has a memory region MR, a contact region PR, and a through contact region TP. Multiple pillars PL and multiple contacts CC and C4 are arranged in each region. The entire multilayer assembly LM is covered by an insulating film 52, such as a silicon oxide film.

[0176] Multiple struts PL penetrate the stacked volume LM to reach the source line SL. The detailed structure of the struts PL is shown below. Figure 17 (b)

[0177] like Figure 17 As shown in (b), regarding the strut PL, a memory layer ME and a channel layer CN are sequentially arranged from the outer periphery of the strut PL, and a core layer CR is filled inside the channel layer CN. The memory layer ME has a multilayer structure formed by sequentially stacking a barrier insulating layer BK, a charge storage layer CT, and a tunnel insulating layer TN from the outer periphery of the strut PL. Furthermore, the memory layer ME is not arranged at the lower end of the strut PL, and the channel layer CN inside it is connected to the source line SL.

[0178] The channel layer CN is, for example, a semiconductor layer such as a polycrystalline silicon layer or an amorphous silicon layer. The core layer CR, the tunnel insulating layer TN, and the barrier insulating layer BK are, for example, silicon oxide layers. The charge storage layer CT is, for example, a silicon nitride layer.

[0179] With this configuration, multiple memory cells MC are formed at the intersection of the pillar PL and the word line WL, arranged along the height direction. By applying a predetermined voltage from the word line WL to the memory cells MC at the same height, charge can be stored in the charge storage layer CT of the memory cell MC, or charge can be drawn out from the charge storage layer CT, allowing data to be written and read from the memory cell MC. Data read from the memory cell MC is transmitted to a sense amplifier (not shown) via a plug above the pillar PL and upper wiring.

[0180] Each of the multiple contacts CC reaches the depth position of any one of the multiple word lines WL contained in the stacked matrix LM, and is connected to that word line WL. In addition, each of the multiple contacts CC is connected to multiple contacts C4 via upper layer wiring and plugs.

[0181] Multiple contacts C4 pass through the stacked layer LM and the source line SL to reach the insulating film 51 below the stacked layer LM. In the insulating film 51, the lower ends of each of the multiple contacts C4 are connected to the transistor TRT of the peripheral circuit CUA via lower layer wiring, vias, and contacts.

[0182] Based on this configuration, a predetermined voltage can be applied from the peripheral circuit CUA to each memory cell MC via contacts C4 and CC, causing the memory cell MC to operate electrically.

[0183] In a semiconductor device MDV having the above configuration, multiple contacts CC of word lines WL reaching different depths of the stacked layer LM can be formed, for example, using the template TM.

[0184] As described above, multiple columnar patterns CL of the template TM are transferred onto a resist film formed on the laminate LM, and the laminate LM is processed through the resist film, thereby forming multiple contact holes of different depths in the laminate LM, such as the holes CHa to CHk. Furthermore, at this stage, the laminate LM may, for example, have a structure composed of multiple layers of silicon oxide and silicon nitride, similar to the processed film PF.

[0185] Next, a replacement process is performed where the silicon nitride layer of the multilayer LM is replaced with a tungsten layer, and word lines WL are replaced. Additionally, an insulating layer is used to cover the sidewalls of multiple contact holes formed using a template TM, and the inner side of the insulating layer is filled with a conductive layer. This forms multiple contacts CC, each connected to word lines WL of different depths within the multilayer LM.

[0186] As described above, by using the imprinting process of the template TM, the contact holes formed on the laminate LM are, for example, shaped with rounded corners. Therefore, when a conductive layer is buried in the contact hole to function as a contact CC, power concentration caused by the sharp angle of the contact CC can be suppressed.

[0187] (Inspection method for the inspection device)

[0188] Next, use Figure 18 An example of the defect inspection method of the inspection device 1 of the embodiment will be described. Figure 18 This is a flowchart illustrating an example of the sequence of inspection methods in the inspection apparatus 1 of the embodiment. The inspection method of the embodiment is performed, for example, as a step in the manufacturing of a template TM, a master template TMm, or a semiconductor device MDV. Here, the case where the object to be inspected is a template TM will be described as an example.

[0189] like Figure 18 As shown, the design data acquisition unit 205 of the overall control unit 20 of the control inspection device 1 acquires the design data of the template TM from the design device 50 (step S101).

[0190] Based on the design data, the focus determination unit 206 determines a predetermined area within one frame of the camera unit 11 from the overall inspection area of ​​the template TM as the camera area (step S102). In addition, based on the height information of the acquired design data, the focus determination unit 206 determines multiple focus positions required for focusing on each of the multiple columnar patterns CL of the template TM within the determined camera area (step S103).

[0191] The inspection unit 201 controls the camera unit 11 via the camera control unit 21 to capture an image with the focus aligned to a predetermined focus position among a plurality of determined focus positions. The image management unit 202 stores the image captured by the camera unit 11 in the storage device 31 (step S104).

[0192] The inspection unit 201 determines whether multiple images with focus aligned to these focus positions have been acquired at each of the multiple focus positions (step S105). If there are focus positions where no image has been acquired (step S105: No), the inspection unit 201 and the image management unit 202 repeatedly perform the processing after step S104 for the unacquired focus positions.

[0193] If images are acquired at all focal positions (step S105: Yes), then the image compositing unit 207 corrects a predetermined image among multiple images other than the image that serves as the reference image (step S106). Furthermore, based on the configuration information in the design data, the image compositing unit 207 identifies and captures a region within the corrected image that contains the columnar pattern CL at the focal point (step S107). The image compositing unit 207 then embeds the captured region into the corresponding region of the reference image to perform compositing (step S108).

[0194] The image compositing unit 207 determines whether the compositing process has ended for all images except the image that serves as the reference image (step S109). If there are uncomposited images remaining (step S109: No), the image compositing unit 207 repeatedly performs the processing after step S106 for the uncomposited images.

[0195] If the image compositing process is complete (step S109: Yes), the defect determination unit 208 performs defect inspection based on the composite image formed by compositing all images (step S110). Additionally, the defect determination unit 208 determines whether a defect is detected within the inspected composite image (step S111). When a defect is detected (step S111: Yes), the defect determination unit 208 classifies its template TM as a defective product (step S114) and terminates the defect inspection process.

[0196] If no defect is detected (step S111: Yes), the defect determination unit 208 determines whether the defect inspection of the entire inspection target area of ​​its template TM has been completed (step S112). When there is an uninspected area (step S112: No), the overall control unit 20 repeatedly performs the processing that started from step S102 for the uninspected area.

[0197] If no defect is detected and the defect inspection of all inspection target areas ends (step S112: Yes), then the defect determination unit 208 determines its template TM as good (step S113).

[0198] Through the above operations, the defect inspection of the inspection device 1 in the embodiment is completed.

[0199] Furthermore, the Figure 18 The process shown is just one example; different processes can also be used for defect inspection.

[0200] For example, not limited to Figure 18 For example, the process of compositing regions captured from multiple images into a reference image can also be summarized as follows. That is, the compositing process in step S108 can be performed after the processing in step S109, after the focus-aligned regions are captured separately from all images. Alternatively, for example, defect inspection can continue even after a defect has been detected in one camera area until the inspection of all areas is completed.

[0201] In addition, the defect inspection method of the inspection device 1 may also include a defect correction process, such as reworking the template TM for which a defect has been detected.

[0202] (Summary)

[0203] In the manufacturing process of semiconductor devices, multiple configurations with different arrival positions in the stacking direction are sometimes formed. If photolithography is used, it is difficult to comprehensively form multiple patterns with different focal depths. Therefore, sometimes multiple processes are required to form multiple configurations with different arrival positions in the stacking direction.

[0204] In this case, if a stencil with multiple patterns of different heights is used for imprinting, multiple patterns at different heights can be formed on the resist film in a general manner, thereby reducing the number of steps and costs. On the other hand, defect inspection of multiple patterns formed on the stencil presents the following problems.

[0205] In imprinting, because the pattern on the template is transferred at equal ratios, the height difference between multiple patterns can easily become large. For example, in optical inspection devices, in a single image, the focus can only be aligned within a range of approximately 50 nm to 200 nm in the height direction. Therefore, it is difficult to align the focus with all the different height positions of multiple patterns contained within a single frame. If the same image contains patterns that are not aligned with the focus, the accuracy of defect detection decreases in cell-to-cell inspection, such as comparing multiple patterns within a single image.

[0206] Here, for example, confocal microscopy can generate full-focus images of multiple patterns focused at different heights. In confocal microscopy, a two-dimensional scan is performed using a laser relative to the plane of the sample, acquiring tomographic images of the focused micro-regions for each layer. These tomographic images are then combined to obtain full-focus images focused at all heights.

[0207] However, confocal microscopy requires large mechanisms such as two-dimensional scanning lasers, increasing inspection costs. Furthermore, it necessitates two-dimensional scanning of the sample from all directions, requiring computation based on massive amounts of data, and thus necessitates a long time to generate a full-focus image.

[0208] According to the inspection device 1 of the embodiment, multiple images IM1 to IM8 with the focus aligned at each of multiple focal positions are captured. These images are obtained by capturing multiple columnar patterns CLa to CLp from the height direction. A composite image is generated by extracting the area containing the columnar pattern CL with the focus aligned among the multiple columnar patterns CLa to CLp from each of the multiple images IM1 to IM8.

[0209] By synthesizing images IM1 to IM8 in this way, high-sensitivity composite images can be generated. Furthermore, by inspecting defects in multiple bar patterns CLa to CLp based on these composite images, defect inspection of multiple bar patterns CLa to CLp with different heights can be performed with high precision.

[0210] According to the inspection device 1 of the embodiment, the camera unit 11 captures an image IM0 with the focus aligned with the height position of the reference surface RP of the template TM, and a composite image is generated by arranging the regions extracted from the multiple images IM1 to IM8 in the corresponding regions of the image IM0.

[0211] In this way, by using image IM0, which can specify the configuration positions of multiple columnar patterns CLa to CLp, as a base, and embedding the regions extracted from multiple images IM1 to IM0, each columnar pattern CLa to CLp can be configured in a more accurate position, and a composite image can be easily generated.

[0212] According to the inspection device 1 of the embodiment, multiple focal positions are determined based on height information contained in the design data that is related to the height of each of the multiple columnar patterns CL from the reference plane RP.

[0213] By referring to design data in this way, for example, without having to perform two-dimensional scanning of the template TM from all directions as in a confocal microscope, the height of multiple columnar patterns CL from the reference plane RP can be easily determined, thereby identifying multiple focal points.

[0214] According to the inspection device 1 of the embodiment, based on the configuration information contained in the design data related to the configuration of multiple patterns CL on the reference plane RP, the area of ​​focus alignment is extracted from multiple images IM1 to IM8.

[0215] By referring to design data in this way, for example, without having to perform two-dimensional scanning of the template TM from all directions as in a confocal microscope, the configuration position of multiple columnar patterns CL on the reference plane RP can be easily identified, thereby allowing the area of ​​focus alignment to be extracted from multiple images IM1 to IM8.

[0216] According to the manufacturing method of the template TM in the embodiment, a plurality of columnar patterns CL protruding from the reference plane RP at different heights are formed.

[0217] Therefore, patterns of varying depths can be generally formed on the resist film 83, making it easy to manufacture a semiconductor device MDV having multiple contacts CC respectively connected to multiple word lines WL. This reduces the number of steps and cost in the manufacturing of the semiconductor device MDV.

[0218] The method for manufacturing the master template TMm and the semiconductor device MDV according to the embodiment achieves the same effect as the method for manufacturing the template TM in the embodiment.

[0219] (Example of variation)

[0220] In the described embodiment, an example of defect inspection of a template TM having multiple columnar patterns CL was given. However, templates having patterns different from those of the template TM can also be inspected by the inspection device 1 of this embodiment.

[0221] The following uses Figures 19-25 Template TMa, a variation example of the inspection object of the inspection device 1 that can be implemented, will be described below. Figures 19-25 In this document, components that are the same as those described in the embodiment are marked with the same symbols, and their descriptions are omitted.

[0222] Figure 19 This is a schematic diagram illustrating an example of the configuration of a template TMa, which represents a variation of the implementation method. Figure 19 (a) is a three-dimensional view on the reference plane RP of template TMa. Figure 19 (b) is a top view of the stepped pattern PY of the template TMA. Figure 19 (c) is a cross-sectional view showing the overall structure of the template TMa.

[0223] like Figure 19 As shown in (c), the template TMa of the variation example has a stepped pattern PY with multiple stepped shapes on the reference plane RP of the mesa facet MS that protrudes toward the surface side of the transparent substrate BA.

[0224] like Figure 19 As shown in (a) and (b), the stepped pattern PY is rectangular when viewed from above. On the four sides of the stepped pattern PY, multiple stepped shapes, or multiple steps SP, are formed with the height increasing from the outer periphery to the center of the stepped pattern PY.

[0225] The heights of the steps SP from the reference plane RP are different. The step difference between each step SP is, for example, a few nm to tens of nm. The number of steps SP from the bottom to the top of the stepped pattern PY is, for example, tens to hundreds.

[0226] Figure 20 The image shows an example of inspecting a template TMa with such a stepped pattern PY using the inspection device 1 of the embodiment. Figure 20 This is an explanatory diagram illustrating the case of inspecting a variation of the implementation method using inspection device 1, specifically the template TMa.

[0227] like Figure 20 As shown, when shooting the stepped pattern PY of the template TMa, multiple steps SPa to SP1 fall within the range of each shot, i.e., the frame of the camera unit 11. However, in a single shot, the focus cannot be aligned with all of the multiple steps SPa to SP1.

[0228] Similar to the embodiment described above, the design data acquisition unit 205 of the control and inspection device 1, which includes the control unit 20, acquires design data of the template TMA from the design device 50. The focus determination unit 206 determines multiple focus positions required to align the focus with each of the multiple steps SP of the template TMA based on the height information of the design data.

[0229] The inspection unit 201 of the overall control unit 20 controls the camera unit 11 via the camera control unit 21 to focus on each of the determined multiple focus positions and capture multiple images IMa0 to IMa4 containing multiple steps SPa to SP1.

[0230] Image IMa0 is a reference image whose focus is on the vicinity of the height position of the reference plane RP of template TMa. Image IMa1 was taken with the focus on the vicinity of the height position of steps SPa to SPc among the multiple steps SPa to SPl. In addition, images IMa2 to IMa4 were taken with the focus on the vicinity of the height position of steps SPd to SPf, SPg to SPi, and SPj to SPl, respectively.

[0231] After performing the necessary corrections on images IMa1 to IMa4, the image compositing unit 207 of the control unit 20 extracts regions containing steps SPa to SPc, SPd to SPf, SPg to SPi, and SPj to SPl from images IMa1 to IMa4 respectively, and embeds them into the corresponding regions of image IMa0. This generates a composite image with the focus aligned to steps SPa to SPl.

[0232] The defect determination unit 208 of the overall control unit 20 performs defect checks on multiple steps SPa to SPl based on the generated synthetic image.

[0233] Next, use Figure 21 The manufacturing method of the template TMA, which becomes the inspection object of the inspection device 1, will be described. Figure 21 This is a cross-sectional view of part of the manufacturing method of the template TMa, which is an example of a variation of the implementation.

[0234] like Figure 21 As shown in (a), on the transparent substrate BA (reference) of the template TMa. Figure 19 (c)) A mesa portion MS protruding toward the surface is formed, and a resist pattern 84p is formed on the upper surface of the mesa portion MS by exposing the outer edge of the mesa portion MS. Alternatively, a mask film such as a chromium film (not shown) can be used to cover the upper surface of the transparent substrate BA, excluding the mesa portion MS.

[0235] like Figure 21As shown in (b), the upper surface of the mesa MS exposed from the resist pattern 84p is machined. As a result, a step SPa is formed on the outer periphery of the mesa MS.

[0236] like Figure 21 As shown in (c), the resist pattern 84p is refined using oxygen plasma or the like, causing the end of the resist pattern 84p on the mesa MS to retract. As a result, the outer periphery of the mesa MS is exposed again.

[0237] In addition, the upper surface of the mesa MS, which is re-exposed from the resist pattern 84p, is machined to form a step SPb on the outer periphery of the mesa MS. At this time, the upper surface of the already formed step SPa is removed, and it is located below the step SPb.

[0238] like Figure 21 As shown in (d), the resist pattern 84p is repeatedly refined and the mesa surface MS is processed to form multiple steps SPa to SPf that decrease in position from the upper surface of the mesa surface MS. Furthermore, at this time, the surface of the mesa surface MS exposed below the lowest step SPf corresponds to the reference surface RP. Then, the remaining resist pattern 84p is removed.

[0239] Then, for the multiple completed steps SP, the aforementioned... Figure 20 The inspection method shown utilizes the inspection apparatus 1 of the embodiment to perform defect inspection. When a defect is detected in any of the multiple steps SP during defect inspection, the template TMA is determined to be defective. When no defect is detected during defect inspection, the template TMA is considered good and used for the manufacture of the semiconductor device described later.

[0240] Through the above operations, a template TMa for the variant example is created.

[0241] Furthermore, the method for manufacturing the template TMA is only one example; variations of the template TMA can also be manufactured using methods other than those described. For example, similar to the case in the described embodiment, a master template can also be used to manufacture the template TMA. Alternatively, for example, multiple steps SP can be directly drawn on the mesa surface MS of the transparent substrate BA using an electron beam or the like.

[0242] Next, use Figures 22-24 The use of the template TMa in the variation example will be explained. Furthermore, the template TMa is also used, for example, during the imprinting process in the manufacturing process of semiconductor devices. The following description... Figures 22-24 The processing is carried out, for example, as a step in the manufacturing process of a semiconductor device.

[0243] Figures 22-24This is a cross-sectional view illustrating a portion of the imprinting process performed using a template TMa, which is a variation of the implementation method.

[0244] like Figure 22 As shown in (a), a processed film PF is formed on a base film UF, and a resist film 85 is formed on the processed film PF.

[0245] With the Figure 14 Similarly to case (a), the substrate UF is, for example, part of a silicon substrate, or an insulating film on a silicon substrate. (As described above) Figure 14 Similarly, in case (a), the processed film PF is, for example, a multilayer film formed by alternating layers of various insulating layers.

[0246] The resist film 85 and the Figure 14 (a) Similarly, the anti-corrosion film 83 can be an uncured light-curing resin film formed by coating or dripping an anti-corrosion material.

[0247] In order to transfer the stepped pattern PY of the template TMA to the resist film 85, the side with the stepped pattern PY is facing the side of the film to be processed PF, so that the template TMA and the resist film 85 are facing each other.

[0248] like Figure 22 As shown in (b), the stepped pattern PY of the template TMA is pressed against the resist film 85. At this time, in order to prevent the platform surface MS of the template TMA from contacting the film to be processed PF, a small gap is set between the upper surface of the step SPf with the largest protrusion and the film to be processed PF.

[0249] In this state, if the template TMA is kept pressed against the resist film 85 and the resist film 85 is irradiated with ultraviolet light or other light that passes through the template TMA, then the resist film 85 will harden.

[0250] like Figure 23 As shown in (a), if the stencil TMA is released, a resist pattern 85p is formed by transferring the stepped pattern PY of the stencil TMA. As described above, since the resist film 85 is hardened with a gap between the stencil TMA and the film to be processed PF, the resist pattern 85p has a resist residue 85r at the bottom of the transferred stepped pattern.

[0251] In this way, depending on the technique of using template TMa, unlike the case of using photolithography, the stepped patterns with different depths in the resist film 85 are formed on the resist film 85 by a single imprinting process.

[0252] like Figure 23 As shown in (b), the resist residue 85r at the bottom of the stepped pattern is removed using oxygen plasma or the like. As a result, the upper surface of the processed film PF is exposed at the bottom of the pattern.

[0253] Furthermore, when the workpiece PF is processed through the resist pattern 85p, the workpiece PF exposed from the resist pattern 85p is removed, forming a stepped TRf with the resist pattern 85p transferred on it. Additionally, the film thickness of the resist pattern 85p decreases, and the bottom section of the pattern disappears. As a result, the workpiece PF is re-exposed at the outer periphery of the stepped TRf.

[0254] like Figure 24 As shown in (a), the film PF is then processed further through the resist pattern 85p. As a result, the upper surface of the film PF, which is exposed again from the resist pattern 85p, is removed, forming a stepped TRe. The depth of the stepped TRf in the film PF further increases. Furthermore, the film thickness of the resist pattern 85p decreases, the second segment of the pattern from the bottom disappears, and the film PF is exposed again at the outer periphery of the stepped TRe.

[0255] like Figure 24 As shown in (b), the film PF to be processed continues to be processed through the resist pattern 85p. As a result, the stepped portion of the resist pattern 85p disappears sequentially from the inside to the outside of the pattern, forming new steps TR on the film PF to be processed, and the depth of each step TR continuously increases.

[0256] like Figure 24 As shown in (c), if the film PF is further processed through the resist pattern 85p, multiple steps TRa to TRf with progressively increasing depth are formed on the film PF. Then, the remaining resist pattern 85p is removed.

[0257] The imprinting process using template TMA is now complete after the above steps.

[0258] Next, use Figure 25 An example of applying the stepped TR formed using the template TMa of the variation example to a semiconductor device will be described.

[0259] Figure 25 This is a cross-sectional view illustrating an example of the configuration of a semiconductor device MDVa, representing a variation of the implementation method. Figure 25 (a) is a cross-sectional view showing the schematic configuration of a modified semiconductor device MDVa. Figure 25 (b) is an enlarged cross-sectional view of the support PL of the semiconductor device MDVa. Furthermore, Figure 25 In (a), the shading was omitted to improve the visibility of the attached figure.

[0260] like Figure 25 As shown in (a), the semiconductor device MDVa has a stacked body LMa on the source line SL, which is formed by stacking multiple word lines WL. Figure 25Although the illustration is omitted in (a), an insulating layer OL is placed between the multiple word lines WL (see reference). Figure 25 (b)).

[0261] The laminate LMa replaces the contact area PR of the laminate LM in the above embodiment and has a stepped area SR, in which multiple contacts CC are provided.

[0262] In the stepped region SR, multiple word lines WL and multiple insulating layers OL of the laminate LMa are processed into a stepped shape, which has a rectangular mortar-like shape when viewed from above. On one side of this mortar-like shape, contacts CC are connected to each step of the stepped word lines WL.

[0263] Furthermore, the configuration of the pillar PL and the configuration of the memory cell MC formed on the pillar PL are the same as those of the semiconductor device MDV in the described embodiment; therefore, details are omitted. Figure 25 (b) Explanation.

[0264] In the semiconductor device MDVa having the above configuration, the stepped shape in the stepped region SR of the stacked body LMa can be formed, for example, using the template TMa.

[0265] As described above, by transferring the stepped pattern PY of the template TMa onto the laminate LMa to form a resist film, and processing the laminate LMa through the resist film, steps are formed in each of the multiple character lines WL with different depths in the laminate LMa, such as the steps TRa to TRf.

[0266] Furthermore, similar to the semiconductor device MDV of the described embodiment, at this stage, the laminate LMa can also have a structure consisting of multiple laminated silicon oxide and silicon nitride layers, similar to the processed film PF. In this case, the imprinting process is used more precisely to form steps on each of the multiple silicon nitride layers to be replaced.

[0267] Then, a replacement process is performed to replace the silicon nitride layer of the multilayer LMa with a tungsten layer and other word lines WL. In addition, multiple contacts CC are formed to connect to the steps of the multiple word lines WL formed by the replacement.

[0268] According to the manufacturing method of the template TMa of the variation example, by applying the defect inspection using the inspection device 1 of the embodiment, the same effect as the embodiment can be achieved.

[0269] According to the manufacturing method of the template TMa of the variation example, a stepped pattern PY with multiple stepped shapes protruding from the reference plane RP is formed.

[0270] Therefore, patterns of varying depths can be generally formed on the resist film 85, making it easy to manufacture semiconductor devices MDVa by processing multiple word lines WL into a stepped shape. This reduces the number of steps and cost in manufacturing semiconductor devices MDVa.

[0271] [Other Implementation Methods]

[0272] In the embodiment described above, the inspection device 1 obtains design data of templates TM, TMa from the design device 50, generates multiple images based on the design data, and synthesizes the multiple images to generate a composite image.

[0273] However, the inspection device can also use methods other than those described above to perform defect inspection. Figure 26 and Figure 27 Examples of the configurations of inspection devices 2 and 3 that perform defect inspection without using design data are shown. Furthermore, in Figure 26 and Figure 27 In this document, components that are the same as those described in the embodiment are marked with the same symbols, and their descriptions are omitted.

[0274] Figure 26 This is a block diagram showing an example of the functional configuration of the overall control unit 120 of the inspection device 2 in other embodiments, together with other configurations of the inspection device 2. Figure 26 The inspection device 2 shown acquires measurement data of the template of the object to be inspected in place of the design data, and performs defect inspection based on the measurement data.

[0275] like Figure 26 As shown, the overall control unit 120 of the control inspection device 2 includes a measurement data acquisition unit 215 instead of a design data acquisition unit 205. The measurement data acquisition unit 215 acquires measurement data obtained from the measurement device 60 by measuring the template of the inspection object.

[0276] The measuring device 60 includes an atomic force microscope (AFM) for measuring the height of each of the multiple patterns formed on the template from the reference plane, and a critical dimension-scanning electroscope (CDSEM) for measuring the position of each of the multiple patterns on the reference plane. The measuring device 60 stores measurement data containing this height and position information.

[0277] The focus determination unit 206 of the overall control unit 120 determines multiple focus positions based on the height information of multiple patterns contained in the measurement data, similar to the case in the described embodiment. The image synthesis unit 207 generates a composite image by extracting the area of ​​focus alignment from the multiple captured images based on the configuration information of the multiple patterns contained in the measurement data.

[0278] Figure 27 This is a block diagram showing another example of the functional configuration of the overall control unit 220 of the inspection device 3 in other embodiments, together with other configurations of the inspection device 3. Figure 27 The inspection device 3 shown does not perform defect inspection of the template based on design data or other data.

[0279] like Figure 27 As shown, the overall control unit 220 of the control and inspection device 3 does not have the design data acquisition unit 205 and the measurement data acquisition unit 215. In addition, the overall control unit 220 has a focus determination unit 226 and an image synthesis unit 227 instead of the focus determination unit 206 and the image synthesis unit 207 of the above embodiment.

[0280] The focus determining unit 226 determines multiple focus positions arranged at predetermined intervals in the height direction within the range that the inspection device 3 can align with the focus. For example, the interval between each focus position can correspond to the focal depth of the light used for inspection. That is, if the focal depth of the inspection light is, for example, about 50 nm to 200 nm, then the interval between each focus position can be set to about 50 nm to 200 nm.

[0281] The multiple focal positions are not determined based on the height positions of the multiple patterns on the template. The focal determination unit 226 can determine the focal positions, for example, by including the range from the lowest to the highest height position in the inspection device 3 where the focus can be aligned. Thus, multiple images can be captured showing the height positions of the multiple patterns on the template aligned with the focal points.

[0282] The image compositing unit 227 extracts a region containing the focal-aligned pattern from each of the plurality of images determined in the manner described above. Then, the image compositing unit 227 uses image analysis techniques to identify the focal-aligned pattern. Based on image analysis, the focal-aligned pattern can be identified, for example, based on at least one of the following: the brightness of each pattern, the brightness around the pattern, the difference in brightness (i.e., the change in contrast of the boundary portion of the pattern), and the sensitivity of the pattern's outline. The image compositing unit 227 combines the regions extracted from the plurality of images to generate a composite image.

[0283] Inspection devices 2 and 3 according to other embodiments achieve the same effect as inspection device 1 according to the described embodiment.

[0284] Furthermore, in the aforementioned embodiments, the inspection devices 1 to 3 capture images formed by reflected light reflected onto the template TM, TMa, or other samples to perform defect inspection. However, the inspection devices may also include, for example, a transmitted illumination optical system to capture images formed by transmitted light passing through the sample to perform defect inspection.

[0285] In addition, in the embodiments described above, the inspection devices 1 to 3 are optical inspection devices, but the inspection devices may also be charged particle beam inspection devices that use charged particles such as electron beams.

[0286] Furthermore, in the aforementioned embodiments, defect inspection targeting templates TM and TMa has been described. However, the inspection apparatus can also perform defect inspection on other samples, such as semiconductor devices having multiple patterns at different heights from the reference plane. Examples of patterns that can be found in such semiconductor devices include... Figure 16 (c) shows the multiple holes CH, and Figure 24 (c) shows multiple steps, TR, etc.

[0287] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms and can be omitted, substituted, or modified in various ways without departing from the spirit of the invention. These embodiments or variations thereof are included in the scope or spirit of the invention and are included in the scope of the invention as described in the claims and its equivalents.

Claims

1. An inspection apparatus for inspecting defects in a sample, the sample having a region comprising a plurality of patterns at different heights from a reference plane, the height being a distance from the reference plane in a first direction intersecting the reference plane; the inspection apparatus comprising: The camera unit is used to photograph the area in question; lens; The focus determination unit determines multiple target values ​​that define the relative position between the reference plane and the lens based on height information related to the height. The image acquisition unit, at the respective relative positions of the reference plane and the lens adjusted based on the plurality of target values, causes the imaging unit to capture a plurality of images encompassing the entire region from the first direction; The image synthesis unit generates a synthesized image from the plurality of images; as well as The defect determination unit performs a determination related to whether the sample has defects based on the synthesized image. The plurality of patterns includes a first pattern and a second pattern whose height is different from that of the first pattern. The image compositing unit extracts a first portion containing the first pattern from a first image (corrected for at least one of the offsets in brightness, magnification, and horizontal / vertical and rotational directions) from the plurality of images, and extracts a second portion containing the second pattern from a second image (corrected for at least one of the offsets in brightness, magnification, and horizontal / vertical and rotational directions) from the plurality of images, generating a composite image containing the first portion and the second portion. The first image was taken at the relative position adjusted based on the first target value among the plurality of target values. The second image was taken at the relative position adjusted based on the second target value among the plurality of target values. The first target value is determined based on the first height information related to the first pattern in the height information. The second target value is determined based on the second height information related to the second pattern in the height information.

2. The inspection device according to claim 1, wherein The image compositing unit generates the composite image by embedding the first part and the second part into the corresponding positions of the third image, wherein the third image is captured at the relative position adjusted based on a third target value that is not in focus on any of the plurality of patterns among the plurality of target values.

3. The inspection device according to claim 1, wherein the plurality of patterns are a plurality of columnar patterns.

4. The inspection device according to claim 1, wherein The image synthesis unit The first part and the second part are extracted based on configuration information related to the configuration of the plurality of patterns to generate the composite image.

5. The inspection device according to claim 4, further comprising: The data acquisition unit acquires computer-aided design data containing the height information and the configuration information.

6. A method for manufacturing a template, the method comprising defect inspection of the template, the template having a region comprising a plurality of patterns at different heights from a reference plane, the height being a distance from the reference plane in a first direction intersecting the reference plane. The manufacturing method is as follows: The plurality of patterns are formed on a transparent substrate. The defect check is: Based on the height information related to the height, multiple target values ​​are determined that define the relative position of the reference plane and the lens. With the relative position of the reference plane and the lens adjusted based on the first target value among the plurality of target values, a first image encompassing the entire region is captured from the first direction. With the relative position of the reference plane and the lens adjusted based on the second target value among the plurality of target values, a second image encompassing the entire region is captured from the first direction. The plurality of patterns includes a first pattern, and a first portion containing the first pattern is extracted from the first image after corrections for brightness, magnification, and offsets in the horizontal and vertical directions and rotation directions. The plurality of patterns includes a second pattern whose height differs from the first pattern. A second portion containing the second pattern is extracted from the second image, which has been corrected for at least one of the following: brightness, magnification, and offsets in the horizontal and vertical directions and rotation. Generate a composite image containing the first part and the second part. The presence or absence of defects in the transparent substrate is determined based on the synthesized image. When determining the plurality of target values The first target value is determined based on the first height information related to the first pattern in the height information. The second target value is determined based on the second height information related to the second pattern in the height information.

7. The method for manufacturing a template according to claim 6, wherein... The manufacturing method also has the following characteristics: With the relative position of the reference plane and the lens adjusted based on a third target value among the plurality of target values, a third image encompassing the entire region is captured from the first direction, wherein the third target value is not in focus on any of the plurality of patterns. When generating the synthesized image The composite image is generated by embedding the first part and the second part into the corresponding positions of the third image.

8. The method for manufacturing a template according to claim 7, wherein... When extracting the first part and the second part, The first part and the second part are extracted based on the configuration information related to the configuration of the plurality of patterns.

9. The method for manufacturing a template according to claim 8, wherein... The manufacturing method It also includes acquiring computer-aided design data containing the height information and the configuration information.

10. A method for inspecting a template, the template having a region comprising a plurality of patterns at different heights from a reference plane, the height being a distance from the reference plane in a first direction intersecting the reference plane. The inspection method is as follows: Based on the height information related to the height, multiple target values ​​are determined that define the relative position of the reference plane and the lens. With the relative position of the reference plane and the lens adjusted based on the first target value among the plurality of target values, a first image encompassing the entire region is captured from the first direction. With the relative position of the reference plane and the lens adjusted based on the second target value among the plurality of target values, a second image encompassing the entire region is captured from the first direction. The plurality of patterns includes a first pattern, and a first portion containing the first pattern is extracted from the first image after corrections for brightness, magnification, and offsets in the horizontal and vertical directions and rotation directions. The plurality of patterns includes a second pattern whose height differs from the first pattern. A second portion containing the second pattern is extracted from the second image, which has been corrected for at least one of the following: brightness, magnification, and offsets in the horizontal and vertical directions and rotation. Generate a composite image containing the first part and the second part. The determination of whether the template has defects is performed based on the synthesized image. When determining the plurality of target values The first target value is determined based on the first height information related to the first pattern in the height information. The second target value is determined based on the second height information related to the second pattern in the height information.

11. The template inspection method according to claim 10, wherein... The inspection method Furthermore, under the condition that the relative position of the reference plane and the lens is adjusted based on a third target value among the plurality of target values, a third image encompassing the entire region is captured from the first direction, wherein the third target value is not in focus on any of the plurality of patterns. The composite image is generated by embedding the first part and the second part into the corresponding positions of the third image.

12. The template inspection method according to claim 11, wherein... When extracting the first part and the second part, Based on configuration information related to the configuration of the plurality of patterns, the first part and the second part are extracted from the first image and the second image.

13. The template inspection method according to claim 12, wherein... The inspection method It also includes acquiring computer-aided design data containing the height information and the configuration information.

Images