A substrate baking chamber for etching

Abstract

The present invention belongs to the field of semiconductor manufacturing technology, and specifically relates to a substrate baking chamber for etching, comprising a first baking chamber, a second baking chamber, a heating unit, a control unit, and a cover plate; the top wall of the first baking chamber is a middle partition plate structure, and the bottom wall of the second baking chamber is a middle partition plate structure; the cover plate is detachably fixedly connected to the top wall of the first baking chamber and the bottom wall of the second baking chamber respectively; at least two substrate supporting structures are arranged in the first baking chamber, and a first exhaust port and a first slit are arranged on the outer wall of the first baking chamber; at least two substrate supporting structures are arranged in the second baking chamber, and a second exhaust port and a second slit are arranged on the outer wall of the second baking chamber; the present invention provides a drying device with multiple independent chambers, the reaction conditions of each chamber do not interfere with each other, and the problem of frequent opening of the chamber during the drying process is avoided, thereby improving the production capacity under the premise of ensuring the consistency of the substrate.

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