Power module for half-bridge circuit with scalable architecture and improved layout

Abstract

The present disclosure relates to power modules for half-bridge circuits with scalable architecture and improved layout. A power module includes a support, a first control contact area on the support, a second control contact area on the support, a first electronic power device, a second electronic power device, a first clip, a second clip, a third clip, and a package embedding the support, the first and second electronic power devices, and partially embedding the first, second, and third clips. The first electronic power device has a first conductive pad electrically coupled to the first clip, a second conductive pad electrically coupled to the third clip, and a control pad coupled to the first control contact area. The second electronic power device has a first conductive pad electrically coupled to the third clip, a second conductive pad electrically coupled to the second clip, and a control pad coupled to the second control contact area.

Description

Technical Field

[0001] This disclosure relates to power modules with scalable architecture and improved layout. Background Technology

[0002] In particular, this power module implements a half-bridge topology and can be used in inverters, rectifiers, static phase compensators, drive devices for electric motors in the automotive field, drive devices for general electric transportation devices, industrial or household drive devices (e.g., in large "white" industrial devices, in large household appliances such as washing machines), and other applications.

[0003] Modules are typically encapsulated in an insulating material, such as molded epoxy, or using gel encapsulation techniques, where a plastic box is filled with insulating gel and encapsulates the components. In both cases, the package has a generally parallelepiped shape with two main (top and bottom) surfaces and four smaller side surfaces with leads protruding from them for electrical coupling. Other signal leads may also extend from the top surface.

[0004] A power module with a half-bridge topology includes multiple (at least two) integrated electronic devices arranged on a patterned metal and / or ceramic substrate. The substrate is typically connected and supported by a conductive mask called a lead frame, which is obtained from a sheet of planar conductive material that can also form leads for the power module.

[0005] This requires considerable layout complexity to avoid parasitic components, typically parasitic inductance, and precise design to ensure clearance isolation distances (“clearance and creepage distances”) and does not allow for efficient use of available space.

[0006] Furthermore, the overall size of the power module cannot be arbitrarily reduced because the gap distance needs to be maintained.

[0007] Furthermore, it is not easy to modify and adjust the type of external leads and their connection with external connecting elements according to specific designs. Summary of the Invention

[0008] One embodiment of this disclosure provides a power module with a half-bridge topology that overcomes some of the drawbacks of the prior art.

[0009] In one embodiment, the power module includes a support member, a first control contact area on the support member, and a second control contact area on the support member. The power module includes a first electronic power device having a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. The power module also includes a second electronic power device having a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. The power module includes a first clamp, a second clamp, and a third clamp. The power module includes an embedded support member, the first and second electronic power devices, and a package partially embedded in the first, second, and third clamps. The first electronic power device has a first conductive pad electrically coupled to the first clamp; a second conductive pad is electrically coupled to the third clamp, and the control pad is coupled to the first control contact area. The second electronic power device has a first conductive pad electrically coupled to the third clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the second control contact area. The first and second electronic power devices form a half-bridge circuit.

[0010] In one embodiment, a method includes: electrically coupling a first conductive pad of a first electronic power device to a first clamp, the first clamp being coupled to a support having a first contact region and a second contact region; electrically coupling a second conductive pad of the first electronic device to a second clamp coupled to the support; and coupling a control pad of the first electronic device to the first control contact region. The method also includes electrically coupling a first conductive pad of a second electronic power device to a second clamp, electrically coupling a second conductive pad of the second electronic power device to a third clamp coupled to the support, and coupling a control pad of the second electronic power device to a second control contact region, wherein the first and second electronic power devices form a half-bridge circuit.

[0011] In one embodiment, the power module includes a support member and a half-bridge circuit. The support member includes a first clamp, a second clamp, a third clamp, a first contact area, and a second contact area. The half-bridge circuit includes a first electronic device having a first conductive pad coupled to the first clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the first control contact area. The half-bridge circuit also includes a second electronic device having a first conductive pad electrically coupled to the second clamp, a second conductive pad electrically coupled to the third clamp, and a control pad coupled to the second control contact area. Attached Figure Description

[0012] To better understand this disclosure, some embodiments thereof will now be described by way of non-limiting example only, with reference to the accompanying drawings, in which:

[0013] Figure 1 This is an equivalent circuit diagram of a half-bridge circuit obtainable using this power module according to one embodiment.

[0014] Figure 2 This is a top view of an embodiment of the power module according to one embodiment, including four power devices packaged in a package.

[0015] Figure 3 According to one embodiment Figure 2 Bottom perspective view of the power module.

[0016] Figure 4 According to one embodiment, it is without a package. Figure 2 Top perspective view of the power module.

[0017] Figure 5 According to one embodiment, it is without a package. Figure 2 A top view of the power module.

[0018] Figure 6 According to one embodiment Figure 2 Without a connector Figure 2 A top view of the power module.

[0019] Figure 7 According to one embodiment, a power device with dashed lines. Figure 2 A top view of the power module's substrate.

[0020] Figure 8 - Figure 10 According to one embodiment Figure 2 A top view of the connector clips used in the power module.

[0021] Figure 11A - Figure 11D The illustration shows a possible configuration of a portion of a substrate in a half-bridge circuit comprising one to eight power devices for each switch of the half-bridge circuit, according to one embodiment.

[0022] Figure 12A and Figure 12B This is a top view of other different configurations of the power module according to one embodiment, characterized by three devices and four electronic power devices for each switch of the half-bridge circuit.

[0023] Figure 13 This is a top view of yet another possible configuration of the power module according to one embodiment.

[0024] Figure 14 According to one embodiment, a power device with dashed lines. Figure 13 A top view of the power module's substrate.

[0025] Figure 15 According to one embodiment Figure 2 A top view of other connector clips used in the power module.

[0026] Figure 16 According to one embodiment Figure 2 A top view of the additional connector clips used in the power module.

[0027] The following description refers to the arrangement shown; therefore, expressions such as “above,” “below,” “top,” “bottom,” “right,” and “left” refer to the accompanying drawings and are not intended to be limiting. Detailed Implementation

[0028] Figure 1 The following reference shows Figure 2 - Figure 14 The circuit diagram of the half-bridge circuit 1 implemented by the power module is described.

[0029] A known type of half-bridge circuit 1 includes two power MOSFET transistors 3 and 4 connected in series (also referred to as top transistor 3 and bottom transistor 4), which are N-channel transistors.

[0030] The top and bottom transistors 3 and 4 can be of any type, such as charge-balanced transistors (also known as “superjunction” transistors), silicon carbide vertical power MOSFET transistors, gallium nitride (GaN) planar power MOSFET transistors, or other three-terminal (source, drain, gate) power devices.

[0031] The half-bridge circuit 1 has a first terminal 10, a second terminal 11, a third terminal 12, a fourth terminal 13, and a fifth terminal 14.

[0032] The first terminal 10 of the half-bridge circuit 1 is coupled to the drain terminal of the top transistor 3; the second terminal 11 of the half-bridge circuit 1 is coupled to the gate terminal of the top transistor 3; the third terminal 12 of the half-bridge circuit 1 is coupled to the source terminal of the top transistor 3 and the drain terminal of the bottom transistor 4; the fourth terminal 13 of the half-bridge circuit 1 is coupled to the gate terminal of the bottom transistor 4; and the fifth terminal 14 is coupled to the source terminal of the bottom transistor 4.

[0033] An embodiment of the power module 2 implementing the half-bridge circuit 1 is shown in Figure 2 - Figure 14 It is shown in the figure and described below.

[0034] In particular, Figure 2 - Figure 10 A first embodiment of power module 2 is shown.

[0035] Here, the power module 2 includes an encapsulation 9 of an insulating material (e.g., resin), typically in the shape of a parallelepiped, having four side surfaces 5, a first main surface 6, and a second main surface 7. Figure 3 ).

[0036] Package 9 can be molded or manufactured using gel encapsulation technology, wherein a plastic box is filled with insulating gel and has protruding leads, insulating gel encapsulation components.

[0037] In the following text, where it is helpful to understand, side surface 5 is also referred to as first side surface 5A; second side surface 5B opposite to first side surface 5A; third side surface 5C adjacent to and contiguous with first and second side surfaces 5A, 5B; and fourth side surface 5D opposite to third side surface 5C.

[0038] exist Figure 3 In the package 7, the second main surface 7 includes a heat dissipation region 8, such as a metal region embedded during the molding of the package 7.

[0039] The first, second, and third power pins 15-17 protrude from two opposing side surfaces 5 and are part of three metal strips (hereinafter also referred to as the first, second, and third clamps 20, 21, and 22), in Figure 4 - Figure 10 In the embodiment, the three metal strips respectively... Figure 1 The first terminal 10, the fifth terminal 14 and the third terminal 12 of the half-bridge circuit 1 are coupled to the outside, as described in detail below.

[0040] Specifically, here, the first and second power pins 15 and 16 protrude from the first side surface 5A and are generally intended to receive power supply potentials (DC+, DC-); the third power pin 17 protrudes from the second side surface 5B and is generally used to connect to a load (not shown).

[0041] Figure 1 The first terminal 10, the third terminal 12, and the fifth terminal 14 (as well as the second and fourth terminals 11 and 13) of the half-bridge circuit 1 are also coupled to the outside via signal connection 25, as explained in detail below.

[0042] The power module 2 also includes a substrate 27 on which electronic power devices 28 are connected. The electronic power devices 28 can be soldered or sintered (powder sintering).

[0043] exist Figure 4 - Figure 10 In the embodiments, there are four electronic power devices 28, which are identified where useful as first, second, third and fourth devices 28.1, 28.2, 28.3 and 28.4.

[0044] In detail, here, the electronic power devices 28 are arranged side by side, two by two, in a regular matrix, and precisely, in Figure 6 In the top view, the first and third devices 28.1 and 28.3 are arranged side by side on the left half of the substrate 27 and realize the top transistor 3; the second and fourth devices 28.2 and 28.4 are arranged on the right half of the substrate 27 and realize the bottom transistor 4.

[0045] Electronic power device 28 has a drain pad 30 extending on a first main surface (forming a first conductive pad and in Figure 6 The first and third devices 28.1 and 28.3 are of the type; the source pad 31 (forming a second conductive pad and visible for the second and fourth devices 28.2 and 28.4) extends on the second main surface opposite the first main surface; and the gate pad 32 (forming a control pad and visible for the second and fourth devices 28.2 and 28.4) also extends on the second main surface.

[0046] The gate pad 32 of each electronic power device 28 is arranged near one of the four corners of the corresponding device 28.

[0047] As is evident from the above and Figure 7 As shown by dashed lines, the electronic power device 28 is arranged around the central vertical axis of the power module 2. Figure 6 and 7 In the first and third devices 28.1 and 28.3, the source and gate pads 31 and 32 are arranged facing the substrate 27 and the drain pad 30 is arranged in the opposite direction; the second and fourth devices 28.2 and 28.4 are arranged such that the drain pad 30 faces the substrate 27 and the source and gate pads 31 and 32 are arranged in the opposite direction.

[0048] Furthermore, the electronic power device 28 is positioned relative to the central horizontal axis ( Figure 6 and 7 In B), they are arranged symmetrically, with the central horizontal axis separating the first device 28.1 from the third device 28.3 (and separating the second device 28.2 from the fourth device 28.4).

[0049] Here, the gate pads 32 of the two power devices 28 forming the top transistor 3 (28.1 and 28.3) or the bottom transistor 4 (28.2 and 28.4) face each other and are arranged close to the central horizontal axis B, facing the periphery of the substrate 27, for their simple connection, as explained in detail below.

[0050] Substrate 27 serves as support and electrical coupling for the electronic power device 28, and is formed therein by multiple layers, such as a DBC (Direct Copper Bond) substrate or an AMB (Active Metal Brazing) substrate. For example, substrate 27 ( Figure 4 The first conductive layer may include a first conductive layer, typically made of a metal such as copper, which forms a heat dissipation region 8 and is therefore indicated by the same reference numerals. Figure 3 and Figure 4 An insulating intermediate layer 35, such as ceramic, is superimposed on the heat dissipation area 8; and a second conductive layer 36, typically made of a metal such as copper, is superimposed on the intermediate layer 35.

[0051] Its layout is in Figure 6 and Figure 7 The visible second conductive layer 36 is specifically patterned and forms a plurality of contact regions 36A-36G that are electrically insulated from each other by separation lines 37, for example, by removing material of the second conductive layer 36 over its entire thickness.

[0052] Specifically, contact areas 36A-36G may include a main area 36A, which is generally centrally located, (partially) below the source pads 31 of the first and third devices 28.1, 28.3 and in direct contact with the drain pads 30 of the second and fourth devices 28.2, 28.4; and a first gate contact area 36B, which (partially) is located below and in direct contact with the gate pads 32 of the first and third devices 28.1, 28.3, such as... Figure 7 As shown by the dashed line; the second gate contact region 36C is disposed around and near the gate pads 32 of the second and fourth devices 28.2 and 28.4; the drain contact region 36D is disposed around the power module 2, laterally to one of the first and third devices 28.1 and 28.3 (in Figure 6 In the middle, next to the first device 28.1), and electrically coupled to the drain pad 30 of the first and third devices 28.1, 28.3 via the first clamp 20, as described in more detail below; the source contact region 36E, which is arranged on the periphery of the power module 2, laterally to one of the second and fourth devices 28.2, 28.4 (in Figure 6 In the middle, the source pad 31 of the second and fourth devices 28.2 and 28.4 is arranged side by side with the second device 28.2 and electrically coupled to the source pad 31 of the second and fourth devices 28.2 and 28.4 via the second clamp 21, as described in more detail below; and the first thermal contact area 36F and the second thermal contact area 36G are arranged on the periphery of the power module 2, close to the third device 28.3 and the fourth device 28.4.

[0053] The wire 38 extends between the gate pad 32 of the second and fourth devices 28.2, 28.4 and the second gate contact region 36C soldered at the end.

[0054] As discussed in detail below and in Figure 4 As clearly visible in the image, the two side portions of the main region 36A and contact regions 36B-36G are arranged near the periphery of the substrate 27 and the package 9. Figure 3 The third and fourth side surfaces 5C and 5D are near the periphery and are coupled to the outside via signal connection 25.

[0055] Back Figure 4 , Figure 5 As shown in the figure, the first and second clamps 20 and 21 extend on and directly contact the electronic power device 28.

[0056] In detail, in the power module 2 shown here, the first clamp 20 (see also...) Figure 8 It has a generally elongated shape and has a main part 20A.

[0057] The main part 20A of the first clamp 20 is the drain pad 30 of the first and third devices 28.1 and 28.3. Figure 6 It extends upwards and makes direct electrical contact with it.

[0058] The first clamp 20 also has a protrusion 20B that extends laterally relative to the main portion 20A at the height of the drain contact region 36D. Figure 7 ), and in direct electrical contact with the latter.

[0059] The first clamp 20 here has a wing 20C extending laterally from one end of its main portion 20A. The wing 20C of the first clamp 20 is arranged below and has the same shape as the corresponding wing of the second clamp 21 (described below), thus in Figure 5 It is not visible in the middle.

[0060] The connecting portion 20D extends between the wing 20C of the first clamp 20 and the first power pin 15.

[0061] First clamp 20 (see details) Figure 4 The first fixture 20 has a three-dimensional shape, which allows the first fixture 20 to connect with the drain pads 30 of the first and third devices 28.1 and 28.3, as well as the drain contact area 36D. Figure 6 7) Direct electrical contact, thereby maintaining an appropriate distance from the second clamp 21 and the contact area 36A that is electrically separated from it.

[0062] Second clamp 21 (see also) Figure 9It also has a generally elongated shape, with a corresponding main portion 21A extending laterally into the main portion 20A of the first clamp 20.

[0063] The main part 21A of the second clamp 21 is located on the source pads 31 of the second and fourth devices 28.2 and 28.4. Figure 6 It extends upwards and makes direct electrical contact with it.

[0064] The second clamp 21 also has a source contact region 36E ( Figure 7 The self-protrusion 21B extends laterally relative to the corresponding main part 21A at the height of the ) and is in direct electrical contact with the latter.

[0065] As described above, the second clamp 21 here has its own wing 21C, which extends laterally relative to the corresponding main portion 21A near its end. As already mentioned, the wing 21C of the second clamp 21 here overlaps and coincides with the wing 20B of the first clamp 20.

[0066] The connecting portion 21D extends above the connecting portion 20D of the first clamp 20, between its own wing 21C and the second power pin 16.

[0067] In addition, power pins 15 and 16 are partially overlapped, thereby reducing the inductance of power module 2.

[0068] like Figure 3 As shown, the overlapping portions of the first and second power pins 15, 16 are surrounded by a protrusion 4A of the package 9, which also extends between these overlapping portions to ensure electrical insulation. Furthermore, in an invisible manner, the material of the package 9 extends between the wings 20B and 21B of the first and second clamps 20, 21, making them electrically insulated from each other.

[0069] Especially Figure 4 As shown, the second clamp 21 also has a three-dimensional shape, which allows the second clamp 21 to make direct electrical contact with the source pads 31 of the second and fourth devices 28.2, 28.4, thereby bypassing the gate pad 32 and contacting the source contact area 36E. Figure 6 7) Direct electrical contact, and maintaining an appropriate distance from the first clamp 20 and from its electrically separated contact area 36A.

[0070] In fact, apart from protrusions 20B and 21B, Figure 8 and 9 The first and second clamps 20, 21 shown have a central vertical axis A relative to the power module 2. Figure 6 A basically symmetrical planar shape.

[0071] Third clamp 22 (see also) Figure 10 It is shorter than the first and second clamps 20, 21, and basically consists only of two portions 22A that are in direct electrical contact with the main region 36A of the second conductive layer 36 and a lateral portion 22B that couples the portion 22A of the third clamp 22 to the third power pin 17.

[0072] Fixtures 20-22 can be sintered or welded to electronic power devices 28 and contact areas 36A, 36D and 36E.

[0073] Obviously, the exact geometry of clamps 20-21 can be quite different from that shown, as long as they allow the aforementioned electrical coupling.

[0074] For example, the first and second clamps 20, 21 may also overlap at least partially on most of the main portions 20A, 21A.

[0075] For example, Figure 15 and Figure 16 It shows a vertical centerline along the substrate 27 (along) Figure 6 The main portions 20A and 21A of the central vertical axis A) are clamps 20 and 21. As described above, they also have protrusions 20E and 21E for contacting the pads of the electronic power device 28.

[0076] Alternatively, only one of the main parts 20A and 21A can be along Figure 6 The central vertical axis A extends in the middle.

[0077] According to another structure, protrusions 20B and / or 21B may extend at least partially parallel to or at different angles relative to the respective main portions 20A, 21A, such as... Figure 16 As shown.

[0078] However, it will be apparent to those skilled in the art that the above description represents only some of the numerous variations in the shape and construction of the fixtures 20-22.

[0079] Similar considerations also apply to contact areas 36A-36G, whose shape and position can vary significantly relative to those already described and shown, and are also combined with the shape and arrangement of fixtures 20-22.

[0080] Signal connection 25 can be made as described in Italian patent application 102022000006617, filed in the applicant's name on April 4, 2022, entitled "Power module having leadframe-less signal connector, specific for automotive applications, and assembling method thereof".

[0081] In particular, Figure 4 In this configuration, signal connections 25 are formed between a pillar portion 25A and an outer portion 25B. The pillar portion 25A is directly attached to the contact areas 36A-36G of the second conductive layer 36 and terminates approximately horizontally with the top surface 6 of the package 9. The outer portion 25B is connected to the pillar portion 25A. Figure 3 It protrudes continuously from the package 9.

[0082] The column portion 25A can be attached to the contact areas 36A-36G by welding, with or without filler material (welding, welding and sintering), or by using conductive adhesive.

[0083] The external portion 25B is a signal pin and can be integral with the post portion 25A and soldered or mounted thereon, and can have different shapes depending on the type of connection considered.

[0084] exist Figure 2 - Figure 10 The power module 2 provides eight signal connections 25, namely (see... Figure 5 The first signal connection 25.1 is connected to the drain contact region 36D and then coupled to the drain pads 30 of the first and third devices 28.1 and 28.3 via the protrusions 20B of the first clamp 20; the second signal connection 25.2 is attached to the first gate contact region 36B and coupled to the gate pads 32 of the first and third devices 28.1 and 28.3 via the latter to provide Figure 1The first switching signal of the half-bridge circuit 1; the third signal connection 25.3, which is connected to the peripheral portion of the main region 36A and then coupled to the source pads 31 of the first and third devices 28.1, 28.3 and the drain pads 30 of the second and fourth devices 28.2, 28.4; the fourth signal connection 25.4, which is attached to the first thermal contact region 36F; the fifth signal connection 25.5, which is attached to the second thermal contact region 36G; the sixth signal connection 25.6, which is attached to another peripheral portion of the main region 36A opposite to the third signal connection 25.3 and coupled to the latter; the seventh signal connection 25.7, which is attached to the second gate contact region 36C and coupled to the gate pads 32 of the second and fourth devices 28.2, 28.4 via wire 38, to provide Figure 1 The second switching signal of the half-bridge circuit 1; and the eighth signal connection 25.8, which is attached to the source contact region 36E and coupled to the source pads 31 of the second and fourth devices 28.2, 28.4 through the protrusion 21B of the second clamp 21.

[0085] Signal connections 25.2, 25.3, 25.6 and 25.8 represent additional connections relative to power pins 15-17 and are used to control power module 2 during operation.

[0086] Temperature sensor 40 is attached here to substrate 27. For example, temperature sensor 40 is an NTC type with an SMD package and is connected to sixth and seventh signal connections 25.6 and 25.7 via first and second thermal contact areas 36F and 36G.

[0087] The power module 2 can be adapted to a half-bridge circuit formed by different numbers of electronic power devices 28, with a simple layout of a second conductive layer 36 and clamps 20-21.

[0088] For example, Figure 11A - Figure 11D The following are examples of implementations using one, two, four, and eight electronic power devices 28. Figure 1 Possible layout of the top transistor 3 portion. Figure 1 The corresponding layout of the bottom transistor 4 portion of the half-bridge circuit 1 can be similar to... Figure 4 - Figure 7 To obtain.

[0089] Figure 11A Involves achieving through a single electronic power device 28 Figure 1 Top transistor 3. (As shown) Figure 7As shown, this arrangement is substantially not different from the configuration of half of the first gate contact region 36B (with respect to the third device 28.3). Accordingly, the respective regions are denoted by the same reference numerals. In particular, here, the first gate contact region 36B is L-shaped.

[0090] Figure 11B relates to the top transistor 3 implemented by two electronic power devices 28 Figure 1 . This arrangement generally corresponds to the configuration of the first gate contact region 36B Figure 7 and specifically relates to the first and third devices 28.1, 28.3. Accordingly, the respective regions are denoted by the same reference numerals. In particular, here, the first gate contact region 36B is T-shaped.

[0091] Figure 11C relates to the top transistor 3 implemented by four electronic power devices 28 Figure 1 . Except for the branch of the first gate contact region 36B, which is now formed by a square central region and a shank 36B1 joining it to the periphery of the substrate 37, after being rotated by 90° and flipped, this arrangement is roughly a doubling of the structure Figure 11B . However, for clarity of illustration, the respective regions are again denoted by the same reference numerals.

[0092] Figure 11D relates to the top transistor 3 implemented by eight electronic power devices 28 Figure 1 . After being rotated by 90° and flipped, this arrangement roughly results in a doubling of the structure Figure 11C , and the first gate contact region 36B now includes two square central regions 36B2 connected by a connecting portion 36B3. The first gate contact region 36B may be coupled to the periphery of the substrate 37 by a wire or a clamp, or directly connected to the outside via a signal connection similar to the signal connection 25 Figure 4 .

[0093] For the rest, here too, the respective regions are still denoted by the same reference numerals.

[0094] Figure 12A shows a possible configuration of the power module 2 when each of the power MOSFET transistors 2, 3 of the half-bridge circuit 1 Figure 1 is formed by three power devices 28.

[0095] In order to facilitate understanding in Figure 12A , the same as that used for Figure 2-10 Same reference numerals as above; the additional power devices 28 in the preceding figures are referred to here as fifth device 28.5 (forming part of top transistor 3) and sixth device 28.6 (forming part of bottom transistor 4).

[0096] The fifth and sixth devices 28.5 and 28.6 are arranged and oriented here adjacent to the second and fourth devices 28.3 and 28.4, respectively.

[0097] Furthermore, here, formation Figure 1 The three devices 28.1, 28.3, and 28.5 of the top transistor 3 in the half-bridge circuit 1 are in the first half ( Figure 12A Arranged opposite each other on the left side of the middle, forming Figure 1 The three devices 28.2, 28.4, and 28.6 of the bottom transistor 4 in the half-bridge circuit 1 are in the second half ( Figure 12A Arranged aligned with each other on the right side of the middle.

[0098] Furthermore, the first gate contact region 36B has a gate pad 32 for connecting the fifth device 28.5 (in Figure 12A Another branch (visible in the phantom in the image); the shape of the contact area 36 and the fixtures 20-22 is slightly modified to allow access to the fifth and sixth devices 28.5, 28.6 in a manner easily understood by those skilled in the art.

[0099] Figure 12B It shows when Figure 1 The possible configuration of power module 2 when each power MOSFET transistor 2, 3 of half-bridge circuit 1 is formed by four power devices 28, when involving Figure 1 The top transistor 3 of the half-bridge circuit 1 is also referred to as power device 28 (3), and the bottom transistor 4 is referred to as power device 28 (4).

[0100] Except for the first gate contact region 36B, each power MOSFET transistor 3, 4 ( Figure 1 The four devices 28(3), 28(4) are basically as follows Figure 11C As shown in the arrangement, the first gate contact region 36B and Figure 11B The first gate contact region 36B is similarly doubled and flipped, and arranged in the formation Figure 1 The top transistor 3 of the half-bridge circuit 1 is at the center of the group of four devices 28(3).

[0101] On the other hand, the second gate contact region 36C can have any shape, such as rectangular, and is arranged here in the formation Figure 1 The bottom transistor 4 of the half-bridge circuit 1 is at the center of the group of four devices 28(4).

[0102] Furthermore, here, the signal connection 25 is arranged in the center relative to each group of four devices 28, and is no longer close to the side surfaces 5C, 5D of the substrate 27, as shown. Figure 2 - Figure 12A As shown.

[0103] Figure 13 and Figure 14 Another embodiment of the power module is shown (here indicated by 102), wherein the position of the power MOSFET transistor is relative to... Figure 4 - Figure 12B It's reversed. Therefore, in Figure 13 and Figure 14 In, with Figure 4 - Figure 12B The same parts are indicated by the reference numerals that are increased by 100.

[0104] Here, the first and third devices (denoted as 128.1, 128.3 and forming) Figure 1 The top transistor 3 of the half-bridge circuit 1 is arranged in Figure 13 , Figure 14 In the right half, the second and fourth devices (denoted as 128.2 and 128.4) form Figure 1 The bottom transistor 4 of the half-bridge circuit 1 is arranged in Figure 13 , Figure 14 In the left half.

[0105] in this case, Figure 4 - Figure 7 Main area 36A in Figure 13 , Figure 14 The right and left sides of the central vertical axis A are divided into two parts (the first and second half regions 136A1 and 136A2).

[0106] Therefore, in power module 102, the first and third devices 128.1 and 128.3 are attached to the first half region 136A1 with their own first main surfaces having drain pads 30; the second and fourth devices 128.2 and 128.4 are attached to the second half region 136A2 with their own second main surfaces having source pads 31 and gate pads 32.

[0107] Furthermore, here, the first clamp (indicated by 120) is shorter and is attached to the second half-region 136A2 near the first side surface 5A of the package 9. Figure 3 The second clamp (denoted by 121) is also shorter and is attached to the first half-region 136A1, also near the first side surface 5A of the package 9. Figure 14 The third clamp (represented by 122) is relative to... Figure 4 - Figure 9It is relatively long and has a generally elongated shape, which is consistent with the source pads 31 of the first and third devices 28.1 and 28.3. Figure 14 The drain pads 30 of the second and fourth devices 28.2 and 28.4 are in direct electrical contact.

[0108] Here, the first and second clamps 120, 121 can have relative to the intermediate vertical axis A ( Figure 14 A precisely symmetrical planar shape.

[0109] For the remaining parts, power module 102 can be provided in a manner completely similar to power module 2; in particular, the layout of the contact areas (here indicated as 136B-136G, except for 136A1 and 136A2) can have Figure 7 Any of the shapes shown in 11A-12B, which also depends on the number of electronic power devices 128 forming the power MOSFET transistors 3, 4.

[0110] The power module described herein has many advantages.

[0111] Specifically, the second conductive layer 36 of the substrate 27 has a very simple layout, which allows for the symmetrical arrangement of the electronic power devices 28 without any intersecting connections, and has short gate, source, and drain connection paths, thereby reducing size and parasitic inductance. It has a low form factor, which allows for high power density and provides high reliability of electrical coupling.

[0112] In this way, the power module has a size comparable to that of currently available half-bridge circuits, wherein each power MOSFET transistor 2, 3 is formed by a single power device 28.

[0113] The same substrate 27 can be used for electronic power devices 28 of different sizes, providing high scalability, maintaining pin output configuration, and thus allowing plug-and-play applications of the same family of modules.

[0114] In particular, this module allows, for example Figure 12A The vertical scalability shown and as Figure 12B The horizontal scalability is shown.

[0115] If the wire 38 is replaced by a small clamp soldered between the gate pad 32 and the second gate contact area 36C, the power module 2,102 allows for the reduction or complete elimination of the bonding wires.

[0116] Furthermore, it allows for symmetrical current paths for the top and bottom transistors 2, 3, thereby balancing the switching speed of the electronic power device 28. Last but not least, this power module has a short and simple bill of materials (BOM), and therefore can be manufactured at low cost.

[0117] Finally, it is clear that modifications and variations can be made to the power modules described and shown herein without departing from the scope of this disclosure as defined by the appended claims. For example, the different embodiments described can be combined to provide further solutions.

[0118] Furthermore, the layout of the connections and fixtures can be easily adapted to form any number of electronic power devices 28 that form power MOSFET transistors 2, 3.

[0119] The shape of signal connection 25 can be changed, especially to use standard pins.

[0120] This power module can be coupled to a single-sided or dual-sided cooling system.

[0121] If two or more phases are required, the half-bridge structure can be doubled or tripled.

[0122] In one embodiment, the power module (2) may be summarized as including: a support (35); a first control contact area (36B; 136c) on the support; a second control contact area (36C; 136b) on the support; a first electronic power device (28.1; 128.1) having a first main surface and a second main surface, a first conductive pad (30) on the first main surface, a second conductive pad (31) on the second main surface, and a control pad (32) on the second main surface; and a second electronic power device (28.1). 2; 128.2) has a first main surface and a second main surface, a first conductive pad (30) on the first main surface, a second conductive pad (31) on the second main surface and a control pad (32) on the second main surface; a first clamp (20; 121); a second clamp (21; 120); a third clamp (22; 122); and a package (9) embedded in the support, the first electronic power device and the second electronic power device, and partially embedded in the first clamp, the second clamp and the third clamp. The first electronic power device (28.1; 128.1) has a first conductive pad (30) electrically coupled to the first clamp (20; 121). The second conductive pad (31) is electrically coupled to the first clamp, and the control pad (32) is coupled to a first control contact area (36B; 136C). The second electronic power device has a first conductive pad (30) electrically coupled to the third clamp (22; 122) and a control pad (32) coupled to the first control contact area (36B; 136C). The second electronic power device (28.2; 128.2) has a first conductive pad electrically coupled to the third clamp (22; 122) and a second conductive pad (31) electrically coupled to the second clamp (21; 120), and the control pad (32) is coupled to the second control contact area (36C; 136b). The first and second electronic power devices form a half-bridge circuit (1).

[0123] The first electronic power device (28.1; 128.1) can be flipped relative to the second electronic power device (28.2; 128.2) around a support axis (A) extending between the first and second electronic power devices.

[0124] The power module may further include a third electronic power device (28.3; 128.3) and a fourth electronic power device (28.4; 128.4). The third electronic power device (28.3; 128.3) has a first main surface and a second main surface, a first conductive pad (30) on the first main surface, a second conductive pad (31) on the second main surface, and a control pad (32) on the second main surface. The fourth electronic power device (28.4; 128.4) has a first main surface and a second main surface, a first conductive pad (30) on the first main surface, a second conductive pad (31) on the second main surface, and a control pad (32) on the second main surface. The third electronic power device (28.3; 128.3) electrically couples the second conductive pad (31) to the third clamp (22; 122), the first conductive pad (30) to the first clamp (20; 121), and the control pad to the first control contact area (36B; 136C). The fourth electronic power device (28.4; 128.4) has a first conductive pad (30) electrically coupled to the third fixture (22; 122), a second conductive pad (31) electrically coupled to the second fixture (21; 120), and a control pad (32) coupled to the second control contact area (36C; 136b).

[0125] The third electronic power device (28.3; 128.3) can be flipped relative to the fourth electronic power device (28.4; 128.4) around the central axis (A) of the support.

[0126] The power module may also include a metallic conductor (38) that couples the control pad (32) of the second electronic power device (28.2) to the second control contact area (36C).

[0127] The power module may also include a metallic conductor (38) that couples the control pad (32) of the first electronic power device (128.1) to the first control contact area (136C).

[0128] The first and second clamps (20, 21; 121, 120) may form corresponding power pins (15, 16) protruding from the first side (5A) of the package (4), and the third clamp (22; 122) has corresponding power pins (17) protruding from the second side (5B) of the package (4) opposite to the first side (5A).

[0129] The first and second clamps (20, 21; 121; 120) may have overlapping portions (20C, 21C, 20D, 21D) that are electrically insulated from each other by an encapsulation (4).

[0130] The power module may also include a first gate connection element (25.2) coupled to a first control contact region (36B) and a second gate connection element (25.7) coupled to a second control contact region (36C). The first and second gate connection elements (25.2, 25.7) extend laterally to the support (35) and have corresponding ends (25B) protruding from the main surface (6) of the package (9).

[0131] The first and second sides of the package may extend laterally to the main surface (6) of the package (9).

[0132] The power module may also include a phase contact region (36A) that extends on the support (35) and is electrically coupled to a third clamp. A first electronic power device (28.1) may have a second main surface facing the support and a second conductive pad (31) electrically coupled to the phase contact region. A second electronic power device (28.2) may have a first main surface facing the support and a first conductive pad (30) electrically coupled to the phase contact region. A first clamp (20) may cover the first main surface of the first electronic power device (28.1) and may be coupled to the first conductive pad (30) of the first electronic power device. A second clamp (21) covers the second main surface of the second electronic power device (28.2) and may be coupled to the second conductive pad (31) of the second electronic power device.

[0133] The power module may further include a first conductive contact area (136A) electrically coupled to a support (35) of the first fixture (121) and a second conductive contact area (136B) electrically coupled to a support (35) of the second fixture (120). A first electronic power device (128.1) may have a first main surface facing the support, and a first conductive pad (30) may be electrically coupled to the first conductive contact area (136A). A second electronic power device (128.2) may have a second main surface facing the support (35), and a second conductive pad (31) may be electrically coupled to the second conductive contact area (136B). A third fixture (122) may have the second main surface of the first electronic power device (128.1) and the first main surface of the second electronic power device (128.2), and may be coupled to the second conductive pad (31) of the first electronic power device and the first conductive pad (30) of the second electronic power device (128.2).

[0134] The power module may further include a first auxiliary connecting element (25.1) coupled to the first clamp (20) via a first auxiliary contact area (36D) on the support (35), a second auxiliary connecting element (25.8) coupled to the second clamp (21) via a second auxiliary contact area (36E) on the support (35), and a third auxiliary connecting element (25.3, 25.6) coupled to the third clamp (22) via the phase contact area (36A) on the support (35). The first, second, and third auxiliary connecting elements extend transversely to the support (35) and have corresponding portions protruding from the main surface (6) of the package (9).

[0135] The support member (35), the first control contact area (36B; 136C) and the second control contact area (36C; 136B) may be part of a multilayer substrate (27), which includes a first conductive layer (36) forming the first control contact area (36B) and the second control contact area (36C), a second conductive layer (8) forming a heat dissipation element facing the outer surface of the power module (2), and an insulating layer (35) inserted between the first and second conductive layers to form the support member (35).

[0136] The first and second electronic power devices (128.1, 128.2) may be power MOSFETs.

[0137] Based on the detailed description above, these and other changes can be made to the embodiments. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of the authorized equivalents of these claims. Therefore, the claims are not limited to this disclosure.

Claims

1. A power module, comprising: Support components; The first control contact area is on the support member; The second control contact area is located on the support member; A first electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. The second electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. First clamp; Second clamp; Third clamp; as well as The package is embedded in the support member, the first electronic power device, and the second electronic power device, and the package is partially embedded in the first clamp, the second clamp, and the third clamp. The first electronic power device has a first conductive pad electrically coupled to the first fixture, a second conductive pad electrically coupled to the third fixture, and a control pad coupled to the first control contact area; and The first conductive pad of the second electronic power device is electrically coupled to the third clamp, the second conductive pad is electrically coupled to the second clamp, and the control pad is coupled to the second control contact area; The first electronic power device and the second electronic power device form a half-bridge circuit, wherein the first clamp and the second clamp are stacked at a position outside the occupied area of ​​the support, wherein the first clamp and the second clamp each have a corresponding wing and a connection extending between the wing and a corresponding power pin, and the wings of the first clamp and the second clamp are stacked at the position outside the occupied area of ​​the support and are electrically insulated from each other by the package.

2. The power module of claim 1, wherein the first electronic power device is flipped relative to the second electronic power device around a support central axis extending between the first electronic power device and the second electronic power device.

3. The power module according to claim 1, further comprising a third electronic power device and a fourth electronic power device; The third electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. The fourth electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface. The third electronic power device has a second conductive pad electrically coupled to the third clamp, a first conductive pad electrically coupled to the first clamp, and a control pad coupled to the first control contact area; and The fourth electronic power device has a first conductive pad electrically coupled to the third clamp, a second conductive pad electrically coupled to the second clamp, and a control pad coupled to the second control contact area.

4. The power module of claim 3, wherein the third electronic power device is flipped relative to the fourth electronic power device about the support central axis.

5. The power module according to claim 1 further includes a metal conductor, the metal conductor coupling the control pad of the second electronic power device to the second control contact area.

6. The power module according to claim 1 further includes a metal conductor, the metal conductor coupling the control pad of the first electronic power device to the first control contact area.

7. The power module of claim 1, wherein the first clamp and the second clamp form corresponding power pins protruding from a first side of the package, and the third clamp has corresponding power pins protruding from a second side of the package opposite to the first side.

8. The power module according to claim 1, further comprising: A first gate connection element is coupled to the first control contact region; as well as A second gate connection element is coupled to the second control contact region; The first gate connection element and the second gate connection element extend laterally to the support and have corresponding ends that protrude from the main surface of the package.

9. The power module of claim 8, wherein the first clamp and the second clamp form corresponding power pins protruding from a first side of the package, and the third clamp has corresponding power pins protruding from a second side of the package opposite to the first side, wherein the first side and the second side of the package extend laterally to the main surface of the package.

10. The power module of claim 1, further comprising a phase contact region extending on the support and electrically coupled to the third clamp; The first electronic power device has a second main surface facing the support and a second conductive pad electrically coupled to the phase contact area; The second electronic power device has a first main surface facing the support, and the first conductive pad is electrically coupled to the phase contact area; The first clamp covers the first main surface of the first electronic power device and is coupled to the first conductive pad of the first electronic power device, and The second clamp covers the second main surface of the second electronic power device and is coupled to the second conductive pad of the second electronic power device.

11. The power module according to claim 1, further comprising: The first conductive contact area on the support member is electrically coupled to the first clamp. as well as The second conductive contact area on the support member is electrically coupled to the second clamp. The first electronic power device has a first main surface facing the support, and the first conductive pad is electrically coupled to the first conductive contact area. The second electronic power device has a second main surface facing the support, and the second conductive pad is electrically coupled to the second conductive contact area; The third clamp faces the second main surface of the first electronic power device and the first main surface of the second electronic power device, and the third clamp is coupled to the second conductive pad of the first electronic power device and the first conductive pad of the second electronic power device.

12. The power module according to claim 1, further comprising: A first auxiliary connecting element is coupled to the first clamp via a first auxiliary contact area on the support member; A second auxiliary connecting element is coupled to the second clamp via a second auxiliary contact area on the support member; as well as A third auxiliary connecting element is coupled to the third clamp via a contact area on the support member. The first auxiliary connecting element, the second auxiliary connecting element, and the third auxiliary connecting element extend laterally to the support and have corresponding portions protruding from the main surface of the package.

13. The power module of claim 1, wherein the support member, the first control contact area, and the second control contact area are part of a multilayer substrate, the multilayer substrate comprising: A first conductive layer forms the first control contact area and the second control contact area; a second conductive layer forms a heat dissipation element facing the outer surface of the power module; and an insulating layer is inserted between the first conductive layer and the second conductive layer and forms the support member.

14. The power module of claim 1, wherein the first electronic power device and the second electronic power device are power MOSFETs.

15. A method for manufacturing a power module, comprising: The first conductive pad of the first electronic power device is electrically coupled to the first clamp, and the first clamp is coupled to the support having a first contact area and a second contact area; The second conductive pad of the first electronic power device is electrically coupled to the second clamp, and the second clamp is coupled to the support member; The control pad of the first electronic power device is coupled to the first control contact area; The first conductive pad of the second electronic power device is electrically coupled to the second fixture; The second conductive pad of the second electronic power device is electrically coupled to the third clamp, which is coupled to the support member; as well as The control pad of the second electronic power device is coupled to the second control contact area, wherein the first electronic power device and the second electronic power device form a half-bridge circuit, wherein the first clamp and the second clamp each include a corresponding recessed portion and a protruding portion on the support, wherein the first clamp and the second clamp each have a corresponding wing and a connection portion extending between the wing and a corresponding power pin, and the wings of the first clamp and the second clamp are stacked at a position outside the occupied area of ​​the support.

16. The method of claim 15, comprising: The support member, the first electronic power device, and the second electronic power device are encapsulated in a package. as well as The first clamp, the second clamp, and the third clamp are partially encapsulated.

17. The method of claim 16, wherein: The first electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface; and The second electronic power device has a first main surface and a second main surface, a first conductive pad on the first main surface, a second conductive pad on the second main surface, and a control pad on the second main surface.

18. A power module, comprising: The support includes a first clamp, a second clamp, a third clamp, a first contact area, and a second contact area; as well as A half-bridge circuit includes: A first electronic power device has a first conductive pad coupled to the first fixture, a second conductive pad electrically coupled to the second fixture, and a control pad coupled to a first control contact area; as well as The second electronic power device has a first conductive pad electrically coupled to the second clamp, a second conductive pad electrically coupled to the third clamp, and a control pad of the second electronic power device coupled to the second control contact area. The first clamp and the second clamp are stacked at a position outside the occupied area of ​​the support. The first clamp and the second clamp each have a corresponding wing and a connection extending between the wing and a corresponding power pin. The wings of the first clamp and the second clamp are stacked at the position outside the occupied area of ​​the support and are electrically insulated from each other by a package.

19. The power module of claim 18, comprising the package, the package being embedded in the support and the first electronic power device and the second electronic power device and being partially embedded in the first clamp, the second clamp and the third clamp.

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