一种高效率热电半导体PN结及其应用
By doping carbon nanoparticles and elements such as antimony, gallium, and magnesium into bismuth telluride-based semiconductors, and using fused deposition modeling (FDM) 3D printing technology to form a high-efficiency thermoelectric PN junction, the problems of low thermoelectric conversion efficiency and poor thermal stability of bismuth telluride semiconductor cooling chips are solved, achieving efficient cooling and good heat dissipation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF WENZHOU ZHEJIANG UNIV
- Filing Date
- 2023-09-18
- Publication Date
- 2026-07-17
AI Technical Summary
Existing bismuth telluride semiconductor refrigeration chips have low thermoelectric conversion efficiency and poor thermal stability, making it difficult to meet the demand for high-efficiency refrigeration.
A high-efficiency thermoelectric semiconductor PN junction is formed by layer-by-layer printing of nanoscale P-type and N-type semiconductor powders at 300-400℃ using a fused deposition modeling (FDM) printer. By doping carbon nanoparticles and antimony into the P-type semiconductor and gallium and magnesium into the N-type semiconductor, the material composition is optimized to improve electrical conductivity and reduce thermal conductivity.
It achieves a cooling efficiency of up to 92% and good thermal stability, significantly improving the performance of thermoelectric materials and reducing costs.