Surface-emitting laser element, electronic device, and method for manufacturing surface-emitting laser element

Abstract

The present technology provides a surface emitting laser element that can reduce variations in light emission intensity between a light emitting portion adjacent to a second region and a light emitting portion other than the light emitting portion. The surface emitting laser element according to the present technology includes a substrate, an electrode provided on one surface of the substrate, a first region provided on the side opposite to the electrode of the one surface and having light emitting portions arranged as a plurality of mesas, and a second region arranged in the periphery of the first region on the side opposite to the electrode of the one surface, wherein a depth dimension of a second recessed portion defined by the second region and a mesa adjacent to the second region among the mesas of the plurality of light emitting portions is greater than a depth dimension of a first recessed portion defined by two mesas adjacent to each other among the mesas of the plurality of light emitting portions.

Description

Technical Field

[0001] The technology disclosed herein (hereinafter also referred to as "the technology") relates to surface-emitting laser elements, electronic devices, and methods for manufacturing surface-emitting laser elements. Background Technology

[0002] Conventionally, surface-emitting laser elements, including a first region in which a plurality of light-emitting units, including a platform, are arranged and a second region surrounding the first region, are known (see, for example, Patent Document 1).

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-132692 Summary of the Invention

[0006] The problem to be solved by the present invention

[0007] However, in conventional surface-emitting laser elements, there is room for improvement in reducing the variation in luminous intensity between the light-emitting unit in the adjacent second region and other light-emitting units.

[0008] Therefore, this technology provides a surface-emitting laser element capable of reducing the variation in luminous intensity between a light-emitting unit in a neighboring second region and other light-emitting units besides that light-emitting unit.

[0009] Solution to the problem

[0010] This technology provides a surface-emitting laser element, comprising: substrate; An electrode is disposed on one surface of a substrate; A first region is disposed on a surface opposite to the electrode side, and multiple light-emitting units with mesas are arranged in the first region; and The second region is arranged around the first region on the side of a surface opposite to one side of the electrode. The depth dimension of the second recessed portion defined by the platform adjacent to the second region and the second region among the platforms of the plurality of light-emitting units is greater than the depth dimension of the first recessed portion defined by the two platforms adjacent to each other among the platforms of the plurality of light-emitting units.

[0011] The electrode can be a common electrode shared by multiple light-emitting units.

[0012] The second region may include a virtual platform adjacent to the platform adjacent to the second region, and the second recessed portion may be defined by the platform adjacent to the second region and the virtual platform.

[0013] In a direction perpendicular to the substrate, the bottom surface of the second recessed portion can be located closer to the surface than the bottom surface of the first recessed portion.

[0014] The opening ends of the first and second recessed portions can be substantially flush.

[0015] The bottom surfaces of both the first and second recessed portions can be located on one side of the substrate opposite to one side of the other surface.

[0016] The bottom surface of the first recessed portion is located on one side of the opposite surface of the substrate, while the bottom surface of the second recessed portion is located on the substrate.

[0017] The bottom surfaces of both the first and second recessed portions can be located in the substrate.

[0018] The first region and the second region can be disposed at different positions in the in-plane direction of the laminated structure including the substrate, and in the laminated structure, the first multilayer reflector, the active layer and the second multilayer reflector can be laminated on a surface side opposite to the electrode side in this order.

[0019] The bottom surfaces of both the first and second recessed portions can be located within the first multilayer reflector.

[0020] The bottom surface of the first recessed portion can be located in the second multilayer film reflector, and the bottom surface of the second recessed portion can be located in the first multilayer film reflector.

[0021] The bottom surface of the first recessed portion can be located in the first multilayer film reflector, and the bottom surface of the second recessed portion can be located in the substrate.

[0022] The bottom surface of the first recessed portion can be located in the second multilayer reflector, and the bottom surface of the second recessed portion can be located in the substrate.

[0023] The bottom surfaces of both the first and second recessed portions can be located within the second multilayer reflector.

[0024] In the cross-section obtained by cutting two adjacent surfaces and the second region together, the width of the second recessed portion can be greater than the width of the first recessed portion.

[0025] Another common electrode may be disposed on the top of at least one platform adjacent to the second region and on the top of at least two platforms not adjacent to the second region.

[0026] The spacing between the centers of two adjacent platforms can be greater than 10 μm and less than 50 μm.

[0027] This technology also provides an electronic device including a surface-emitting laser element.

[0028] This technology also provides a method for manufacturing a surface-emitting laser element, the method comprising: A laminate is formed by laminating a first multilayer reflector, an active layer, and a second multilayer reflector onto a substrate in this order; A first region and a second region are formed by etching a laminate, with multiple mezzanines disposed in the first region and the second region surrounding the first region; and An electrode is formed on the surface of the substrate on the side opposite to the surface on the first multilayer reflector. In forming the first region and the second region, the laminate is etched such that the depth dimension of the second recess defined by the mesa of the plurality of light-emitting units adjacent to the second region and the second region is greater than the depth dimension of the first recess defined by the two mesas of the plurality of light-emitting units adjacent to each other.

[0029] When forming the electrode, the electrode may be formed on the surface of the substrate in a region corresponding to at least the first region and the second region on the side opposite to the surface on one side of the first multilayer reflector. Attached Figure Description

[0030] Figure 1 This is a cross-sectional view (part 1) of a surface-emitting laser element according to one embodiment of the present technology.

[0031] Figure 2 This is a cross-sectional view (part 2) of a surface-emitting laser element according to one embodiment of the present technology.

[0032] Figure 3 This is a plan view of a surface-emitting laser element according to one embodiment of the present technology.

[0033] Figure 4 This is a flowchart illustrating a first example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0034] Figure 5 It means Figure 4 The first step is a cross-sectional view.

[0035] Figure 6 It means Figure 4 A cross-sectional view of the first sub-step of the second step.

[0036] Figure 7 It means Figure 4 A cross-sectional view of the second sub-step of the second step.

[0037] Figure 8It means Figure 4 A cross-sectional view of the third sub-step of the second step.

[0038] Figure 9 It means Figure 4 A cross-sectional view of the first sub-step of the third step.

[0039] Figure 10 It means Figure 4 A cross-sectional view of the second sub-step of the third step.

[0040] Figure 11 It means Figure 4 A cross-sectional view of the third sub-step of the third step.

[0041] Figure 12 It means Figure 4 The cross-sectional view of the fourth step.

[0042] Figure 13 It means Figure 4 The cross-sectional view of the fifth step.

[0043] Figure 14 It means Figure 4 The cross-sectional view of the sixth step.

[0044] Figure 15 It means Figure 4 The cross-sectional view of the seventh step.

[0045] Figure 16 It means Figure 4 The cross-sectional view of the eighth step.

[0046] Figure 17 This is a flowchart illustrating a second example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0047] Figure 18 It means Figure 17 A cross-sectional view of the first sub-step of the third step.

[0048] Figure 19 It means Figure 17 A cross-sectional view of the second sub-step of the third step.

[0049] Figure 20 It means Figure 17 A cross-sectional view of the third sub-step of the third step.

[0050] Figure 21 It means Figure 17 A cross-sectional view of the first sub-step of the fourth step.

[0051] Figure 22 It means Figure 17A cross-sectional view of the second sub-step of the fourth step.

[0052] Figure 23 This is a flowchart illustrating a third example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0053] Figure 24 It means Figure 23 A cross-sectional view of the first sub-step of the third step.

[0054] Figure 25 It means Figure 23 A cross-sectional view of the second sub-step of the third step.

[0055] Figure 26 It means Figure 23 A cross-sectional view of the third sub-step of the third step.

[0056] Figure 27 It means Figure 23 A cross-sectional view of the first sub-step of the fourth step.

[0057] Figure 28 It means Figure 23 A cross-sectional view of the second sub-step of the fourth step.

[0058] Figure 29 This is a diagram illustrating the operation of a surface-emitting laser element according to one embodiment of the present technology.

[0059] Figure 30 This is a diagram illustrating the operation of the surface-emitting laser element in the comparative example.

[0060] Figure 31 This is a cross-sectional view of a surface-emitting laser element according to a modified example 1 of an embodiment of the present technology.

[0061] Figure 32 This is a cross-sectional view of a surface-emitting laser element according to a modified example 2 of an embodiment of the present technology.

[0062] Figure 33 This is a cross-sectional view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 3.

[0063] Figure 34 This is a cross-sectional view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 4.

[0064] Figure 35 This is a cross-sectional view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 5.

[0065] Figure 36This is a cross-sectional view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 6.

[0066] Figure 37 This is a cross-sectional view (part 1) of a surface-emitting laser element according to a variation 7 of an embodiment of the present technology.

[0067] Figure 38 This is a cross-sectional view (part 2) of a surface-emitting laser element according to a variation 7 of an embodiment of the present technology.

[0068] Figure 39 This is a plan view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 7.

[0069] Figure 40 This is a plan view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 8.

[0070] Figure 41 This is a plan view of a surface-emitting laser element according to a variation of an embodiment of the present technology, namely, Example 9.

[0071] Figure 42 This is a diagram illustrating an example of the application of a surface-emitting laser element according to one embodiment of the present technology in a distance measuring device.

[0072] Figure 43 This is a block diagram illustrating an example of a schematic configuration of a vehicle control system.

[0073] Figure 44 This is an explanatory diagram showing an example of the installation location of a distance measuring device. Detailed Implementation

[0074] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that components having substantially the same functional configuration are indicated by the same reference numerals in this specification and the drawings, and redundant descriptions are omitted. The embodiments described below provide representative embodiments of the present technology, and the scope of the present technology should not be narrowly interpreted based on these embodiments. In this specification, even where each of the surface-emitting laser element, electronic device, and method of manufacturing a surface-emitting laser element according to the present technology exhibits multiple effects, it is sufficient that each of the surface-emitting laser element, electronic device, and method of manufacturing a surface-emitting laser element according to the present technology exhibits at least one effect. The effects described herein are merely examples and are not limiting, and other effects may be provided.

[0075] Furthermore, it will be described in the following order.

[0076] 1. Configuration of a surface-emitting laser element according to an embodiment of the present technology

[0077] 2. Operation of the surface-emitting laser element according to the embodiments of this technology

[0078] 3. A first example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0079] 4. A second example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0080] 5. A third example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology.

[0081] 6. The effects of the surface-emitting laser element according to the embodiments of this technology and the effects of its manufacturing method.

[0082] 7. Surface-emitting laser elements according to variations 1 to 9 of the embodiments of the present technology.

[0083] 8. Other variations of the embodiments of this technology

[0084] 9. Examples of applications of electronic devices

[0085] 10. An example of applying a surface-emitting laser element to a distance measurement device.

[0086] 11. Example of a distance measuring device mounted on a moving body

[0087] 1. <Arrangement of surface-emitting laser elements according to embodiments of the present technology>

[0088] (Overall configuration)

[0089] Figure 1 This is a cross-sectional view (part 1) of a surface-emitting laser element according to one embodiment of the present technology. Figure 2 This is a cross-sectional view (part 2) of a surface-emitting laser element according to one embodiment of the present technology. Figure 3 This is a plan view of a surface-emitting laser element according to one embodiment of the present technology.

[0090] In the following text, it will be explained by appropriate use Figures 1 to 3 The XYZ three-dimensional orthogonal coordinate system shown in the figure is used for description.

[0091] Figure 1 It is along Figure 3 The cross-sectional view (YZ cross-sectional view) of line VV. Figure 2 It is along Figure 3 The cross-sectional view (XZ cross-sectional view) of the line WW.

[0092] As an example, such as Figure 1As shown, a surface-emitting laser element 10 according to one embodiment includes: a substrate 100; a cathode electrode 111 disposed on a surface 100a (hereinafter also referred to as the "back surface") of the substrate 100; a first region A1 disposed on the side of the surface 100a opposite to the cathode electrode side 111, and a plurality of light-emitting units (LEPs) including mesa M are arranged in the first region; and a second region A2 disposed around the first region A1 on the side of the surface 100a opposite to the cathode electrode side of the substrate 100.

[0093] In the following description, it will be assumed that one surface 100a of the substrate 100 is the lower side (-Z side) and the top side of each mesa M is the upper side (+Z side).

[0094] In the surface-emitting laser element 10, as an example, such as Figure 3 As shown in the plan view, the second region A2 (the region surrounded by double-dotted lines) is arranged on both sides of the first region A1 in the Y-axis direction.

[0095] In the first region A1, as an example, multiple light-emitting units (LEPs) including a mesa M are arranged in two dimensions. Each LEP is a vertical-cavity surface-emitting laser (VCSEL).

[0096] Here, multiple light-emitting units (LEPs) are arranged in a matrix shape (grid shape) with equal intervals in the X-axis and Y-axis directions, as an example, but other layouts such as zigzag or random shapes are also possible.

[0097] As from Figures 1 to 3 As can be seen from the example, each platform M has a basically cylindrical shape, but can have another shape, such as a basically truncated cone shape, a basically elliptical truncated cone shape, or a basically polygonal truncated cone shape.

[0098] The top surface of each countertop M is basically flush.

[0099] Here, in the first region A1, the distance between two adjacent platforms M in the X-axis direction or the Y-axis direction (the distance between the centers of the two platforms M) is set to, for example, more than 10 μm and less than 50 μm (preferably about 20 μm).

[0100] As an example, such as Figure 1 and Figure 3 As shown, the second region A2 has a protruding portion PP, wherein the upper surfaces of each platform M are substantially flush with each other. The protruding portion PP extends in the X-axis direction.

[0101] return Figure 1As an example, the first region A1 and the second region A2 are located at different positions in the in-plane direction of the laminated structure including the substrate 100. In the laminated structure, as an example, a first multilayer reflector 102, an active layer 105, and a second multilayer reflector 107 are sequentially laminated on the side (+Z side) opposite to the cathode electrode 111 side (-Z side) of one surface 100a of the substrate 100. The lamination direction in the laminated structure is consistent with the Z-axis direction.

[0102] Furthermore, in the laminated structure, for example, a spacer layer 101 is provided between the substrate 100 and the first multilayer reflector 102.

[0103] Furthermore, in the laminated structure, as an example, an oxide confinement layer 103 is disposed in the first multilayer reflector 102.

[0104] Furthermore, in the laminated structure, as an example, a first coating layer 104 and a second coating layer 105 are disposed on both sides, sandwiching the active layer 105 between the first multilayer film reflector 102 and the second multilayer film reflector 107 in the Z-axis direction. The second coating layer 106 is located above the first coating layer 104 (+Z side).

[0105] Furthermore, in the laminated structure, for example, the contact layer 108 is disposed on the upper surface (+Z side surface) of the second multilayer reflector 107.

[0106] As an example, each light-emitting unit (LEP) includes a first multilayer reflector 102, an active layer 105, and a second multilayer reflector 107. More specifically, as an example, each light-emitting unit (LEP) includes a first multilayer reflector 102, an oxide confinement layer 103, a first coating layer 104, an active layer 105, a second coating layer 106, a second multilayer reflector 107, and a contact layer 108.

[0107] As an example, the mesa M of each light-emitting unit (LEP) includes a first multilayer reflector 102, an active layer 105, and an upper portion of a second multilayer reflector 107. More specifically, as an example, the mesa M of each light-emitting unit (LEP) includes an upper portion of the first multilayer reflector 102, an oxide confinement layer 103, a first coating layer 104, an active layer 105, a second coating layer 106, a second multilayer reflector 107, and a contact layer 108.

[0108] For example, the second region A2 has the same layer configuration as the light-emitting unit LEP. For example, the protrusion PP in the second region A2 has a layer configuration that is substantially similar to the layer configuration of the mesa M.

[0109] The first region A1 and the second region A2 are covered by an insulating film 109. Contact holes CH are provided in the top portion of each platform M covering the insulating film 109.

[0110] An anode electrode 110 is provided on the insulating film 109. The anode electrode 110 is configured to contact the contact layer 108 via a contact hole CH provided on the top of each mesa M.

[0111] More specifically, the anode electrode 110 contacts the contact layer 108 via the peripheral portion of the contact hole CH of each mesa M. The interior of the anode electrode 110 on each mesa M (the center of the contact hole CH) is the emission port of the light-emitting unit LEP with mesa M. The emission direction of each light-emitting unit LEP is the +Z direction.

[0112] (Substrate)

[0113] The substrate 100 is, for example, a GaAs substrate of a first conductivity type (e.g., n-type).

[0114] (Cathode electrode)

[0115] For example, the cathode electrode 111 (n-side electrode) is a common electrode provided for multiple light-emitting units (here, all light-emitting units). As an example, the cathode electrode 111 is solid-state disposed over substantially the entire region of the rear surface of the substrate 100.

[0116] The cathode electrode 111 can have a single-layer structure or a laminated structure.

[0117] The cathode electrode 111 is made of at least one metal (including alloys) selected, for example, from the group consisting of Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn and In.

[0118] When the cathode electrode 111 has a laminated structure, the cathode electrode 111 is made of a material such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd.

[0119] The cathode electrode 111 is electrically connected to the cathode side (negative electrode side) of the laser driver, which includes the driver IC.

[0120] (Spare layer)

[0121] For example, spacer layer 101 is made of AlGaAs-based compound semiconductor of a first conductivity type (e.g., n-type). Spacer layer 101 is also referred to as a "buffer layer".

[0122] (First multilayer reflector)

[0123] In the example, the first multilayer reflector 102 is a semiconductor multilayer reflector. Multilayer reflectors are also known as distributed Bragg reflectors. Semiconductor multilayer reflectors, as a type of multilayer reflector (distributed Bragg reflector), have low light absorption, high reflectivity, and conductivity. The first multilayer reflector 102 is also referred to as a low DBR.

[0124] As an example, the first multilayer reflector 102 is a semiconductor multilayer reflector of a first conductivity type and has a structure in which multiple (e.g., two types) semiconductor layers (refractive index layers) with different refractive indices are alternately laminated with an optical thickness of 1 / 4 (λ / 4) of the oscillation wavelength λ. Each refractive index layer of the first multilayer reflector 102 is composed of an AlGaAs-based compound semiconductor of a first conductivity type (e.g., n-type).

[0125] (Oxidation confinement layer)

[0126] For example, the oxidation confinement layer 103 includes an unoxidized region 103a composed of AlAs and an oxidized region 103b composed of oxides of AlAs (e.g., Al2O3) surrounding the periphery of the unoxidized region 103a.

[0127] (First coating layer)

[0128] The first cladding layer 104 is composed of an AlGaAs-based compound semiconductor of a first conductivity type (e.g., n-type).

[0129] (Active layer)

[0130] The active layer 105 has a quantum well structure including a barrier layer and a quantum well layer, wherein the barrier layer comprises, for example, an AlGaAs-based compound semiconductor. The quantum well structure can be a single quantum well structure (QW structure) or a multiple quantum well structure (MQW structure).

[0131] (Second coating layer)

[0132] The second cladding layer 106 is composed of an AlGaAs-based compound semiconductor of a second conductivity type (e.g., p-type).

[0133] The active layer 105, the first cladding layer 104, and the second cladding layer 106 constitute a resonator.

[0134] (Second multilayer reflector)

[0135] As an example, the second multilayer reflector 107 is a semiconductor multilayer reflector of the second conductivity type and has the following structure: multiple (e.g., two types) semiconductor layers (refractive index layers) with different refractive indices are alternately laminated with an optical thickness of 1 / 4 wavelength of the oscillation wavelength. Each refractive index layer of the second multilayer reflector 107 is composed of a second conductivity type (e.g., p-type) AlGaAs-based compound semiconductor.

[0136] (Contact layer)

[0137] The contact layer 108 is made of a GaAs-based compound semiconductor of a second conductivity type (e.g., P-type).

[0138] (Insulating film)

[0139] The insulating film 109 is composed of dielectrics such as SiO2, SiN, and SiON.

[0140] (Anode electrode)

[0141] like Figure 1 and Figure 2 As shown, the anode electrode 110 (p-side electrode) is an electrode typically disposed on the top of at least one mesa M adjacent to the second region A2 and on the top of at least two mesa M not adjacent to the second region A2. Here, as an example, the anode electrode 110 is a common electrode shared by the mesa M of all light-emitting units (LEPs). It should be noted that, for example, for each of a plurality of mesa rows arranged in the X-axis direction (each mesa row includes electrodes disposed on...) Figure 3 Multiple mesa (M) in the Y-axis direction can be used to set the anode electrode 110 together, or at least two mesa rows in the multiple mesa rows can be used to set the anode electrode 110 together.

[0142] The anode electrode 110 is configured to cover part of the mesa M (excluding the central part of the top of the mesa M) and the protrusion PP of the multiple light-emitting units LEP.

[0143] The anode electrode 110 can have a single-layer structure or a laminated structure.

[0144] For example, the anode electrode 110 is made of at least one metal (including alloys) selected from the group consisting of Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn and In.

[0145] When the anode electrode 110 has a laminated structure, the anode electrode 110 is made of a material such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, or Ag / Pd.

[0146] For example, a portion of the anode electrode 110 covering the second region A2 is electrically connected to the anode side (positive electrode side) of the laser driver, which includes the driver IC.

[0147] (First concave portion and second concave portion)

[0148] The first recessed portion R1 is defined by two adjacent mesa M among the mesa M of the multiple light-emitting units LEP (see...). Figure 1 and Figure 2 ).

[0149] In the mesa M of the multiple light-emitting units (LEPs), the mesa M adjacent to the second region A2 on the -Y side (the mesa M closest to the -Y side) and the second region A2 on the -Y side define a second recessed portion R2 on the -Y side (see...). Figure 1 and Figure 3 ).

[0150] Similarly, among the multiple light-emitting units (LEPs), the mesa M adjacent to the second region A2 on the +Y side (the mesa M closest to the +Y side) and the second region A2 on the +Y side define the second recessed portion R2 on the +Y side (see...). Figure 3 ).

[0151] In the following text, the platform M adjacent to the second region A2 (e.g., the platform M closest to the -Y side and the platform M closest to the +Y side) is collectively referred to as the "outermost platform".

[0152] As an example, the first recessed portion R1 and the second recessed portion R2 are mortar-shaped (the shape deepens towards the center).

[0153] The depth dimension H2 of the second recessed portion R2 is larger than the depth dimension H1 of the first recessed portion R1.

[0154] The depth dimension H1 of the first recessed portion R1 is the distance between the portion of the bottom surface of the first recessed portion R1 closest to the substrate 100a (closest to the -Z side) (e.g., the central portion) and the upper surface of each mesa M (the surface on the +Z side).

[0155] The bottom surface of the first recessed portion R1 is located on the side opposite to the side of one surface 100a (-Z side) of the substrate 100, which is the other surface 100b (+Z side).

[0156] More specifically, the bottom surface of the first recessed portion R1 is located in the first multilayer film reflector 102.

[0157] The depth dimension H2 of the second recessed portion R2 is the distance between the portion of the bottom surface of the second recessed portion R2 closest to the substrate 100a (closest to the -Z side) (e.g., the central portion) and the upper surface of each mesa M (the surface on the +Z side).

[0158] The bottom surface of the second recessed portion R2 is located on the side opposite to the side of one surface 100a (-Z side) of the substrate 100, which is the other surface 100b (+Z side).

[0159] More specifically, in the first multilayer reflector 102, the bottom surface of the second recessed portion R2 is located below (on the -Z side) the bottom surface of the first recessed portion R1.

[0160] The upper surface of each platform M and the upper surface of each protrusion PP are substantially flush. That is, the opening ends of the first recessed portion R1 and the second recessed portion R2 are approximately flush (located on the same plane).

[0161] Here, the cross-section obtained by cutting together two adjacent platforms M in the first region A1 and the second region A2 (e.g., Figure 1 In the YZ section shown, the width of the second recessed portion R2 is greater than the width of the first recessed portion R1. Alternatively, in the section, the widths of the first recessed portion R1 and the second recessed portion R2 can be the same, or the width of the first recessed portion R1 can be greater than the width of the second recessed portion R2.

[0162] The widths of the first recessed portion R1 and the second recessed portion R2 are, for example, a few μm to tens of μm.

[0163] Here, as Figure 3 As shown, among the mesa M excluding the outermost mesa and those on the +X and -X sides, mesa M exists adjacent to any one of the +X, -X, -Y, and -Y sides (mesa M exists adjacent in four directions). In this case, among the mesa M excluding the outermost mesa, due to the influence of the adjacent mesa M, the current flowing from the anode electrode 110 flows along the height direction (Z-axis direction) toward the cathode electrode 111.

[0164] In the mesa M, which is closest to the +X or -X side (excluding the outermost mesa), the separation groove ST exists on the +X or -X side, and the mesa M exists adjacent to three sides: the +Y side, the -Y side, and the +X or -X side (the mesa M exists adjacent to three sides, and the separation groove ST exists on one side). In this case, in the mesa M excluding the outermost mesa, the current flowing from the anode electrode 110 flows along the height direction (Z-axis direction) to the cathode electrode 111.

[0165] In the outermost mesa, the adjacent mesa M does not exist on the adjacent second region A2 side. In this case, in the outermost mesa, the current flowing from the anode electrode 110 tends to diffuse from the direction along the height direction (Z-axis direction) along the in-plane direction (XY plane) to the second region A2 side, and therefore the resistance may be lower than the resistance of the mesa M other than the outermost mesa (see...). Figure 30 In this case, the current is concentrated on the outermost mesa, and there is concern about an increase in the variation of luminous intensity between the outermost mesa and other mesa M.

[0166] Therefore, in this example, as described above, by making the depth dimension of the second recessed portion R2 larger than the depth dimension of the first recessed portion R1, the path of current to the second region A2 is narrowed, and the diffusion of current flowing through the outermost platform to the second region A2 is suppressed (see...). Figure 29 As a result, by suppressing the decrease in resistance of the outermost mesa, current concentration on the outermost mesa is suppressed, and furthermore, the variation in luminous intensity between the outermost mesa and other mesa M can be reduced. More precisely, it is possible to suppress the luminous intensity of the outermost mesa from being higher than that of the other mesa M.

[0167] Note that the degree of reduction in the resistance difference (resistance difference) between the outermost platform and the platform M other than the outermost platform can be set by the depth dimension difference (H2-H1) between the first recessed portion R1 and the second recessed portion R2.

[0168] Basically, as H2 - H1 increases, the rate of decrease in resistance difference increases. Conversely, as H2 - H1 decreases, the rate of decrease in resistance difference decreases.

[0169] Therefore, when the resistance difference is small, for example, when the mesa spacing is relatively large (e.g., 30 μm to 50 μm), it is preferable to set H2-H1 to be relatively small, and when the resistance difference is large, for example, when the mesa spacing is relatively small (e.g., 10 μm to 30 μm), it is preferable to set H2-H1 to be relatively large.

[0170] Therefore, the difference H2 - H1 between the depth dimensions of the first recessed portion R1 and the second recessed portion R2 can be set based on the interval (table spacing) between the centers of two adjacent platforms M.

[0171] In this case, as the gap between the centers of two adjacent platform M narrows, the difference H2-H1 between the depth dimensions of the first recessed portion R1 and the second recessed portion R2 is preferably set to be large.

[0172] (Separation tank)

[0173] Separation grooves ST for component separation are formed at the ends of each second region A2 opposite to the side of the first region A1, and at the ends of the +X and -X sides of the first region A1 (see...). Figure 1 and Figure 3 ).

[0174] For example, the bottom surface of the separation groove ST is located in the first multilayer reflector 102.

[0175] 2. Operation of the surface-emitting laser element according to embodiments of the present technology

[0176] In each light-emitting unit (LEP) of the surface-emitting laser element 10, when current is injected from the anode side of the laser driver into the active layer 105 via the anode electrode 110, the contact layer 108, the second multilayer reflector 107, the second cladding layer 106, and the active layer 105 emit light. The light is amplified by the active layer 105 between the first and second multilayer reflectors 102 and 107, and reciprocates as it passes through the oxide confinement layer 103. When the oscillation condition is met, the laser is emitted to the rear surface side of the substrate 100. The current injected into the active layer 105 flows out to the cathode side of the laser driver through the first cladding layer 104, the oxide confinement layer 103, the first multilayer reflector 102, and the cathode electrode 111.

[0177] 3. <First Example of a Method for Manufacturing a Surface-Emitting Laser Element According to Embodiments of the Present Art>

[0178] In the following text, reference will be made to Figure 4 Flowcharts and Figures 5 to 16 The cross-sectional view illustrates a first example of a method for manufacturing a surface-emitting laser element 10 according to one embodiment.

[0179] Here, as an example, a plurality of surface-emitting laser elements 10 are simultaneously generated on a wafer, which serves as the substrate material of the substrate 100, using a semiconductor manufacturing method of a semiconductor manufacturing apparatus. Next, the plurality of surface-emitting laser elements 10 integrated together are separated from each other by cutting to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0180] In the first step S1, a laminate L is generated. Specifically, a chemical vapor deposition (CVD) method is used, such as metal-organic chemical vapor deposition (MOCVD). Figure 5 As shown, a first multilayer reflector 102, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108, comprising a spacer layer 101 and a selected oxide layer 103S composed of AlAs, are sequentially laminated onto a substrate 100 to form a laminate L.

[0181] In the next step S2, a platform structure MS is formed, which is the platform M excluding the outermost platform.

[0182] Specifically, first, a resist pattern RP1 is generated for forming the mesa structure MS into mesa M (see...). Figure 6 The platform M is different from the outermost platform on the contact layer 108 of the laminate L.

[0183] Next, the laminate L is etched using dry or wet etching with the resist pattern RP1 as a mask to form the mesa structure MS (see...). Figure 7 Here, etching is performed to expose at least the side surface of the selected oxide layer 103S (in the first multilayer reflector 102, the etched bottom surface that becomes the bottom surface of the first recessed portion R1 is located below the selected oxide layer 103S). The first recessed portion R1 with a depth dimension H1 is formed by forming two adjacent mesa structures MS.

[0184] Finally, the resist pattern RP1 is etched and removed by dry etching or wet etching (see Figure 8 ).

[0185] In the next step S3, a platform structure MS, which serves as the outermost platform, and a protruding structure PS, which serves as the protruding portion PP, are formed.

[0186] Specifically, firstly, a resist pattern RP2 is formed on the laminate on which the mesa structure MS is formed, the resist pattern being used to form the mesa structure MS as the outermost mesa and the protrusion structure PS as the protrusion portion PP (see...). Figure 9 ).

[0187] Next, using the resist pattern RP2 as a mask, the laminate is etched by dry etching or wet etching to form the mesa structure MS as the outermost mesa and the protruding structure PS as the protruding portion PP (see...). Figure 10 Here, in the first multilayer reflector 102, etching is performed until the etched bottom surface, which serves as the bottom surface of the second recessed portion R2, is located below the bottom surface of the first recessed portion R1. By forming the mesa structure MS as the outermost mesa and the protrusion structure PS as the protrusion portion PP, the second recessed portion R2 with a depth dimension H2 and the separation groove ST are formed.

[0188] Finally, the resist pattern RP2 is etched and removed by dry etching or wet etching (see...). Figure 11 ).

[0189] In the next step S4, an oxide confinement layer 103 is formed. Specifically, the mesa structure MS (see...) Figure 11The outer portion of the selected oxide layer 103S is oxidized to form an oxidation confinement layer 103 (see...). Figure 12 More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selected oxide layer 103S is oxidized from its side surface (Al in AlAs is selectively oxidized) to form an oxidation confinement layer 103 in which the unoxidized region 103a is surrounded by the oxidized region 103b. At this time, the selected oxide layer 103S with the protruding structure PS is similarly oxidized. Therefore, the mesa structure MS becomes a mesa M to form the first region A1, and the protruding structure PS becomes a protruding portion PP to form the second region A2.

[0190] In the next step S5, an insulating film 109 is formed (see...) Figure 13 Specifically, the insulating film 109 is formed on a laminate on which the first region A1 and the second region A2 are formed by vapor deposition, sputtering or other methods.

[0191] In the next step S6, the contact hole CH is formed (see Figure 14 Specifically, the insulating film 109 covering the top of the mesa M is etched and removed by dry etching or wet etching. As a result, contact holes CH are formed, and the top of the mesa M (contact layer 108) is exposed.

[0192] In the next step S7, the anode electrode 110 is formed. Specifically, the electrode material of the anode electrode 110 is formed on the insulating film 109 in which the contact holes CH are opened by vapor deposition, sputtering, or the like, and is patterned, for example, by a lift-off method (see...). Figure 15 ).

[0193] In the final step S8, the cathode electrode 111 is formed (see...). Figure 16 Specifically, after the rear surface of the substrate 100 is polished and thinned, the electrode material of the cathode electrode 111 is deposited in solid form on substantially the entire area of ​​the rear surface of the substrate 100 by vapor deposition or sputtering.

[0194] Subsequently, processes such as annealing are performed to form a plurality of surface-emitting laser elements 10 on a wafer. Then, the plurality of surface-emitting laser elements 10 for each element are separated by cutting along a separation groove ST to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0195] 4.

[0196] In the following text, reference will be made to Figure 17 Flowcharts and Figures 5 to 8 , Figures 11 to 16 and Figures 18 to 22The cross-sectional view illustrates a second example of a method for manufacturing a surface-emitting laser element 10 according to one embodiment.

[0197] Here, as an example, a plurality of surface-emitting laser elements 10 are simultaneously generated on a wafer, which serves as the substrate material of the substrate 100, using a semiconductor manufacturing method of a semiconductor manufacturing apparatus. Next, the plurality of surface-emitting laser elements 10 integrated together are separated from each other by cutting to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0198] In the first step S11, a laminate L is generated. Specifically, a chemical vapor deposition (CVD) method is used, such as metal-organic chemical vapor deposition (MOCVD). Figure 5 As shown, a first multilayer reflector 102, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108, comprising a spacer layer 101 and a selected oxide layer 103S composed of AlAs, are sequentially laminated onto a substrate 100 to form a laminate L.

[0199] In the next step S12, a platform structure MS is formed, which is the platform M other than the outermost platform.

[0200] Specifically, first, a resist pattern RP1 is generated for forming the mesa structure MS into mesa M (see...). Figure 6 The platform M is different from the outermost platform on the contact layer 108 of the laminate L.

[0201] Next, the laminate L is etched using dry or wet etching with the resist pattern RP1 as a mask to form the mesa structure MS (see...). Figure 7 Here, etching is performed to expose at least the side surface of the selected oxide layer 103S (in the first multilayer reflector 102, the etched bottom surface that becomes the bottom surface of the first recessed portion R1 is located below the selected oxide layer 103S). The first recessed portion R1 with a depth dimension H1 is formed by forming two adjacent mesa structures MS.

[0202] Finally, the resist pattern RP1 is etched and removed by dry etching or wet etching (see Figure 8 ).

[0203] In the next step S13, a platform structure MS is formed as the outermost platform.

[0204] Specifically, firstly, a resist pattern RP3, used to form the mesa structure MS as the outermost mesa, is formed on the laminate on which the mesa structure MS is formed (see...). Figure 18 ).

[0205] Next, using the resist pattern RP3 as a mask, the laminate is etched using either dry or wet etching to form the mesa structure MS, which becomes the outermost mesa (see...). Figure 19 Here, in the first multilayer reflector 102, etching is performed until the etched bottom surface, which serves as the bottom surface of the second recessed portion R2, is located below the bottom surface of the first recessed portion R1. The second recessed portion R2, having a depth dimension H2, is formed by forming a mesa structure MS that serves as the outermost mesa.

[0206] Finally, the resist pattern RP3 is etched and removed by dry etching or wet etching (see Figure 20 ).

[0207] In the next step S14, a protruding structure PS is formed as a protruding portion PP.

[0208] Specifically, firstly, a resist pattern RP4 for forming the protruding structure PS as the protruding portion PP is formed on a laminate on which the mesa structure MS is formed (see...). Figure 21 ).

[0209] Next, the laminate is etched using dry or wet etching with the resist pattern RP4 as a mask to form the protruding structure PS as the protruding portion PP (see...). Figure 22 Here, etching is performed until the etched bottom surface, which serves as the bottom surface of the separation groove ST, is located below the selected oxide layer 103S in the first multilayer reflector 102. The separation groove ST is formed by forming a protruding structure PS that serves as a protruding portion PP.

[0210] Finally, the resist pattern RP4 is etched and removed by dry etching or wet etching (see Figure 11 ).

[0211] In the next step S15, an oxide confinement layer 103 is formed. Specifically, the mesa structure MS (see...) Figure 11 The peripheral portion of the selected oxide layer 103S is oxidized to form an oxidation confinement layer 103 (see...). Figure 12 More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selected oxide layer 103S is oxidized from its side surface (Al in AlAs is selectively oxidized) to form an oxidation confinement layer 103 in which the unoxidized region 103a is surrounded by the oxidized region 103b. At this time, the selected oxide layer 103S with the protruding structure PS is similarly oxidized. Therefore, the mesa structure MS becomes a mesa M to form the first region A1, and the protruding structure PS becomes a protruding portion PP to form the second region A2.

[0212] In the next step S16, an insulating film 109 is formed (see...) Figure 13Specifically, the insulating film 109 is formed on a laminate on which the first region A1 and the second region A2 are formed by vapor deposition, sputtering or other methods.

[0213] In the next step S17, the contact hole CH is formed (see...) Figure 14 Specifically, the insulating film 109 covering the top of the mesa M is etched and removed by dry etching or wet etching. As a result, contact holes CH are formed, and the top of the mesa M (contact layer 108) is exposed.

[0214] In the next step S18, the anode electrode 110 is formed. Specifically, the electrode material of the anode electrode 110 is formed on the insulating film 109 in which the contact holes CH are opened by vapor deposition, sputtering, or the like, and is patterned, for example, by a lift-off method (see...). Figure 15 ).

[0215] In the final step S19, the cathode electrode 111 is formed (see...). Figure 16 Specifically, after the rear surface of the substrate 100 is polished and thinned, the electrode material of the cathode electrode 111 is deposited in solid form on substantially the entire area of ​​the rear surface of the substrate 100 by vapor deposition or sputtering.

[0216] Subsequently, processes such as annealing are performed to form a plurality of surface-emitting laser elements 10 on a wafer. Then, the plurality of surface-emitting laser elements 10 for each element are separated by cutting along a separation groove ST to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0217] 5.

[0218] In the following text, reference will be made to Figure 23 Flowchart and Figures 5 to 8 , Figures 11 to 16 as well as Figures 24 to 28 The cross-sectional view illustrates a third example of a method for manufacturing a surface-emitting laser element 10 according to one embodiment.

[0219] Here, as an example, a plurality of surface-emitting laser elements 10 are simultaneously generated on a wafer, which serves as the substrate material of the substrate 100, using a semiconductor manufacturing method of a semiconductor manufacturing apparatus. Next, the plurality of surface-emitting laser elements 10 integrated together are separated from each other by cutting to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0220] In the first step S21, a laminate L is generated. Specifically, a chemical vapor deposition (CVD) method is used, such as metal-organic chemical vapor deposition (MOCVD). Figure 5As shown, a first multilayer reflector 102, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108, comprising a spacer layer 101 and a selected oxide layer 103S composed of AlAs, are sequentially laminated onto a substrate 100 to form a laminate L.

[0221] In the next step S22, a platform structure MS is formed, which is the platform M excluding the outermost platform.

[0222] Specifically, firstly, a resist pattern RP1 is generated for forming the mesa structure MS into mesa M (see...). Figure 6 The platform M is different from the outermost platform on the contact layer 108 of the laminate L.

[0223] Next, the laminate L is etched using dry or wet etching with the resist pattern RP1 as a mask to form the mesa structure MS (see...). Figure 7 Here, etching is performed to expose at least the side surface of the selected oxide layer 103S (in the first multilayer reflector 102, the etched bottom surface that becomes the bottom surface of the first recessed portion R1 is located below the selected oxide layer 103S). The first recessed portion R1 with a depth dimension H1 is formed by forming two adjacent mesa structures MS.

[0224] Finally, the resist pattern RP1 is etched and removed by dry etching or wet etching (see Figure 8 ).

[0225] In the next step S23, the separation tank ST is formed.

[0226] Specifically, firstly, the resist pattern RP5 used to form the separation groove ST is formed on a laminate on which the mesa structure MS is formed (see...). Figure 24 ).

[0227] Next, using the resist pattern RP5 as a mask, the laminate is etched by dry etching or wet etching to form the separation groove ST (see...). Figure 25 Here, etching is performed until the etched bottom surface, which serves as the bottom surface of the separation tank ST, is located below the selected oxide layer 103S in the first multilayer reflector 102.

[0228] Finally, the resist pattern RP5 is etched and removed by dry etching or wet etching (see...). Figure 26 ).

[0229] In the next step S24, a platform structure MS, which serves as the outermost platform, and a protruding structure PS, which serves as the protruding portion PP, are formed.

[0230] Specifically, firstly, a resist pattern RP6 (see [reference]) is formed on the laminate in which the mesa structure MS and the separation groove ST are formed, for forming the mesa structure MS as the outermost mesa and the protrusion structure PS as the protrusion portion PP. Figure 27 ).

[0231] Next, using the resist pattern RP6 as a mask, the laminate is etched by dry etching or wet etching to form the mesa structure MS as the outermost mesa and the protruding structure PS as the protruding portion PP (see...). Figure 28 Here, in the first multilayer reflector 102, etching is performed until the etched bottom surface, which serves as the bottom surface of the second recessed portion R2, is located below the bottom surface of the first recessed portion R1.

[0232] Finally, the resist pattern RP6 is etched and removed by dry etching or wet etching (see...). Figure 11 ).

[0233] In the next step S25, an oxide confinement layer 103 is formed. Specifically, the mesa structure MS (see...) Figure 11 The peripheral portion of the selected oxide layer 103S is oxidized to form the oxidation confinement layer 103 (see...). Figure 12 More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selected oxide layer 103S is oxidized from its side surface (Al in AlAs is selectively oxidized) to form an oxidation confinement layer 103 in which the unoxidized region 103a is surrounded by the oxidized region 103b. At this time, the selected oxide layer 103S with the protruding structure PS is similarly oxidized. Therefore, the mesa structure MS becomes a mesa M to form the first region A1, and the protruding structure PS becomes a protruding portion PP to form the second region A2.

[0234] In the next step S26, an insulating film 109 is formed (see...) Figure 13 Specifically, the insulating film 109 is formed on a laminate on which the first region A1 and the second region A2 are formed by vapor deposition, sputtering or other methods.

[0235] In the next step S27, the contact hole CH is formed (see...). Figure 14 Specifically, the insulating film 109 covering the top of the mesa M is etched and removed by dry etching or wet etching. As a result, contact holes CH are formed, and the top of the mesa M (contact layer 108) is exposed.

[0236] In the next step S28, the anode electrode 110 is formed. Specifically, the electrode material of the anode electrode 110 is formed on the insulating film 109 in which the contact holes CH are opened by vapor deposition, sputtering, or the like, and is patterned, for example, by a lift-off method (see...). Figure 15 ).

[0237] In the final step S29, the cathode electrode 111 is formed (see...). Figure 16 Specifically, after the rear surface of the substrate 100 is polished and thinned, the electrode material of the cathode electrode 111 is deposited in solid form on substantially the entire area of ​​the rear surface of the substrate 100 by vapor deposition or sputtering.

[0238] Subsequently, processes such as annealing are performed to form a plurality of surface-emitting laser elements 10 on a wafer. Then, the plurality of surface-emitting laser elements 10 for each element are separated by cutting along a separation groove ST to obtain a plurality of chip-shaped surface-emitting laser elements 10.

[0239] In each of the first to third examples of the method for manufacturing a surface-emitting laser element 10 described above, after forming a mesa structure MS that will become a mesa M other than the outermost mesa by etching, a protrusion structure PS that will become a protrusion PP, a second recessed portion R2, and a separation groove ST are formed by etching. However, the present invention is not limited thereto. For example, the mesa structure MS that is a mesa M other than the outermost mesa, the protrusion structure PS that is a protrusion PP, the second recessed portion R2, and the separation groove ST can be formed simultaneously by etching. However, by etching the first recessed portion R1, the second recessed portion R2, and the separation groove ST as separately as possible (preferably all of them), the accuracy of each etching depth (positional accuracy of the bottom surface) can be improved.

[0240] 6. <Effects of the surface-emitting laser element and its manufacturing method according to the embodiments of the present technology>

[0241] The effects of a surface-emitting laser element 10 and its manufacturing method according to an embodiment of the present technology will be described below.

[0242] A surface-emitting laser element 10 according to one embodiment includes: a substrate 100; a cathode electrode 111 disposed on a surface 100a (rear surface) of the substrate 100; a first region A1 disposed on a side of the surface 100a opposite to the cathode electrode 111, and a plurality of light-emitting units (LEPs) including mesa M are arranged in the first region; and a second region A2 disposed around the first region A1 on a side of the surface 100a opposite to the cathode electrode 111, and configured such that the depth dimension H2 of a second recessed portion R2 defined by a mesa M (outermost mesa) adjacent to the second region A2 among the mesa M of the plurality of light-emitting units (LEPs) and the second region A2 are greater than the depth dimension H1 of the first recessed portion R1 defined by two adjacent mesa M of the mesa M of the plurality of light-emitting units (LEPs).

[0243] In this case, because the current flowing through the outermost mesa is suppressed from diffusing to the second region A2 side, the decrease in the resistance of the outermost mesa is suppressed, and in addition, the current concentration on the outermost mesa is suppressed (see...). Figure 29 ).

[0244] Therefore, according to the surface-emitting laser element 10, the variation in luminescence intensity between the light-emitting unit LEP adjacent to the second region A2 and the light-emitting units LEP other than the light-emitting unit LEP can be reduced.

[0245] On the other hand, Figure 30 In the comparative example of the surface-emitting laser element 10C shown, the depth dimension H of the recessed portion R defined by two adjacent mesa M of the mesa M of the plurality of light-emitting units is the same as the depth dimension H of the recessed portion R defined by the mesa M (outermost mesa) of the adjacent protrusion PP of the plurality of light-emitting units and the protrusion PP. In this case, the diffusion of current flowing through the outermost mesa to the protrusion PP side cannot be suppressed, the resistance of the outermost mesa decreases, and the current concentrates on the outermost mesa. Therefore, the variation in luminous intensity between the light-emitting unit having the mesa adjacent to the protrusion PP and the light-emitting units other than the light-emitting unit cannot be reduced. This also applies to the surface-emitting laser element described in Patent Document 1.

[0246] The cathode electrode 111 is a common electrode provided for multiple light-emitting units (LEPs). In this case, the above-described configuration of the surface-emitting laser element 10 is particularly effective because the current flowing through each mesa M flows to the cathode electrode 111 side (the rear surface side of the substrate 100).

[0247] In the direction perpendicular to the substrate 100 (Z-axis direction), the bottom surface of the second recessed portion R2 is located at a position closer to a surface 100a of the substrate 100 than the bottom surface of the first recessed portion R1. As a result, the aforementioned variation in luminous intensity can be reliably reduced.

[0248] Furthermore, the opening ends of the first recessed portion R1 and the second recessed portion R2 are approximately flush. Thus, the first recessed portion R1 and the second recessed portion R2 can be formed by etching a laminate L produced by crystal growth (e.g., epitaxial growth).

[0249] The surface-emitting laser element 10 also includes an anode electrode 110 disposed in contact with the top of at least one mesa M adjacent to the second region A2 and the tops of at least two mesa M not adjacent to the second region A2. In this case, the light-emitting units LEP including the corresponding mesa M are driven simultaneously at the same voltage, but even in this case, the aforementioned variation in light intensity can be suppressed.

[0250] The spacing (mesa distance) between the centers of two adjacent mesa M is preferably between 10 μm and 50 μm. In this case, because the mesa distance is relatively small, the resistance difference between the outermost mesa and other mesa tends to be relatively large, and the configuration of the surface-emitting laser element 10 is particularly effective.

[0251] A method for manufacturing a surface-emitting laser element 10 (first to third examples) includes: a step of sequentially laminating a first multilayer reflector 102, an active layer, and a second multilayer reflector on a substrate 100 to produce a laminate L; a step of forming a first region A1 and a second region A2 by etching the laminate L, wherein a plurality of light-emitting units (LEPs) including mesa M are arranged in the first region A1, and the second region A2 surrounds the first region A1; and a step of forming a cathode electrode 111 on a surface of the substrate 100 opposite to the surface on one side of the first multilayer reflector 102, wherein, in the step of forming the first region A1 and the second region A2, the laminate is etched such that the depth dimension of the second recessed portion R2 defined by the mesa M of the plurality of light-emitting units (LEPs) adjacent to the second region A2 and the depth dimension of the second region A2 are greater than the depth dimension of the first recessed portion R1 defined by two mesa M of the plurality of light-emitting units (LEPs) adjacent to each other.

[0252] According to the method for manufacturing the surface-emitting laser element 10, a surface-emitting laser element capable of reducing the variation in luminous intensity between the light-emitting unit LEP adjacent to the second region A2 and the light-emitting units LEP other than the light-emitting unit LEP can be manufactured.

[0253] In the step of forming the cathode electrode 111, the cathode electrode 111 is formed as, for example, a solid shape in at least the region corresponding to the first region A1 and the second region A2 on the surface of the substrate 100 opposite to the surface of the first multilayer reflector 102. As a result, a cathode electrode 111 shared by multiple light-emitting units (LEPs) can be easily formed.

[0254] 7. <Surface-emitting laser elements according to embodiments of the present technology, variations 1 to 9>

[0255] In the following description, modified examples 1 to 9 of an embodiment of the present technology, surface-emitting laser elements 10-1 to 10-9, will be described with reference to the accompanying drawings.

[0256] (Based on the surface-emitting laser element of Modified Example 1)

[0257] Figure 31 This is a cross-sectional view of the surface-emitting laser element 10-1 in Modified Example 1 (corresponding to along...) Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0258] like Figure 31 As shown, except that the bottom surface of the first recessed portion R1 is located in the first multilayer film reflector 102 and the bottom surface of the second recessed portion R2 is located in the substrate 100, the surface emitting laser element 10-1 according to Modified Example 1 has a configuration similar to that of an example surface emitting laser element 10.

[0259] The surface-emitting laser element 10-1 exhibits effects that are substantially similar to those of an example surface-emitting laser element 10.

[0260] Here, the first multilayer reflector 102 and the second multilayer reflector 107 are designed to have a resistivity higher than that of the substrate 100 in order to reduce free carrier losses. Therefore, in the surface-emitting laser element 10-1, under the condition that the depth dimension difference (H2-H1) between the first recessed portion R1 and the second recessed portion R2 is the same, the reduction in the resistance difference (resistance difference) between the outermost mesa and the mesa M other than the outermost mesa is less than the reduction in the resistance difference of the surface-emitting laser element 10 in one embodiment. However, since the bottom surface of the second recessed portion R2 is located in the substrate 100 (because the second recessed portion R2 is deep), the effect of suppressing current diffusion to the second region A2 side is high.

[0261] The surface-emitting laser element 10-1 can also be manufactured by a manufacturing method similar to that used for manufacturing the surface-emitting laser element 10.

[0262] (Based on the surface-emitting laser element of Modified Example 2)

[0263] Figure 32 This is a cross-sectional view of the surface-emitting laser element 10-2 in Modified Example 2 (corresponding to the cross-section along...). Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0264] like Figure 32 As shown, the surface-emitting laser element 10-2 according to Modified Example 2 has a configuration similar to that of the surface-emitting laser element 10 in one embodiment, except that the bottom surface of the first recessed portion R1 and the bottom surface of the second recessed portion R2 are both located in the substrate 100.

[0265] The surface-emitting laser element 10-2 exhibits essentially similar effects to an example surface-emitting laser element 10, but under the same conditions H2-H1, the reduction in resistance difference is less than that of the surface-emitting laser element 10. However, since the bottom surface of the second recessed portion R2 is located in the substrate 100 (because the second recessed portion R2 is deep), the effect of suppressing current diffusion to the second region A2 side is high.

[0266] The surface-emitting laser element 10-2 can also be manufactured by a manufacturing method similar to that used for the surface-emitting laser element 10.

[0267] (Based on the surface-emitting laser element of Modified Example 3)

[0268] Figure 33 This is a cross-sectional view of the surface-emitting laser element 10-3 in Modified Example 3 (corresponding to the cross-section along...). Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0269] like Figure 33 As shown, the surface-emitting laser element 10-3 according to Modified Example 3 has a configuration that is substantially similar to that of an example surface-emitting laser element 10, except that the bottom surface of the first recessed portion R1 and the bottom surface of the second recessed portion R2 are both located in the second multilayer film reflector 107.

[0270] In the surface-emitting laser element 10-3, an oxide confinement layer 103 is disposed in the second multilayer reflector 107.

[0271] In the surface-emitting laser element 10-3, each mesa M and protrusion PP does not have an active layer 105.

[0272] The surface-emitting laser element 10-3 exhibits essentially the same effect as an example surface-emitting laser element 10.

[0273] The surface-emitting laser element 10-3 can also be manufactured by a manufacturing method similar to that used for the surface-emitting laser element 10.

[0274] (Based on the surface-emitting laser element of Modification 4)

[0275] Figure 34 This is a cross-sectional view of the surface-emitting laser element 10-4 in Modified Example 4 (corresponding to the cross-section along...). Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0276] In the surface-emitting laser element 10-4 according to variant example 4, such as Figure 34 As shown, the bottom surface of the first recessed portion R1 and the bottom surface of the second recessed portion R2 are both located in the first multilayer film reflector 107.

[0277] In the surface-emitting laser element 10-4, H2 - H1 is smaller than H2 - H1 in one embodiment of the surface-emitting laser element 10.

[0278] The surface-emitting laser element 10-4 exhibits effects that are substantially similar to those of the surface-emitting laser element 10 in one embodiment. However, since the degree of reduction in resistance difference is less than that of the surface-emitting laser element 10 in one embodiment, it is particularly effective when the resistance difference between the outermost mesa and another mesa M becomes smaller (e.g., when the mesa spacing is relatively large).

[0279] The surface-emitting laser element 10-4 can also be manufactured by a manufacturing method similar to that used for the surface-emitting laser element 10.

[0280] (Based on the surface-emitting laser element of Modification 5)

[0281] Figure 35 This is a cross-sectional view of the surface-emitting laser element 10-5 in Modified Example 5 (corresponding to the cross-section along...). Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0282] like Figure 35 As shown, apart from the dimensions of H2-H1, the surface-emitting laser element 10-5 according to Modified Example 5 has a similar configuration to the surface-emitting laser element 10-1 of Modified Example 1.

[0283] In the surface-emitting laser element 10-5, H2 - H1 is greater than H2 - H1 in the surface-emitting laser element 10-1 of Modified Example 1.

[0284] The surface-emitting laser element 10-5 exhibits effects substantially similar to those of the surface-emitting laser element 10 in one embodiment, but has a higher degree of reduction in resistance difference than the surface-emitting laser element 10-1 in variant 1, and is therefore particularly effective when the resistance difference between the outermost mesa and other mesa M increases (e.g., when the mesa spacing is relatively small).

[0285] The surface-emitting laser element 10-5 can also be manufactured by a manufacturing method similar to that of an example surface-emitting laser element 10.

[0286] (Based on the surface-emitting laser element of Modification 6)

[0287] Figure 36 This is a cross-sectional view of the surface-emitting laser element 10-6 in Modified Example 6 (corresponding to the cross-section along...). Figure 3 ( Figure 1 (The cross-sectional view of the line VV intercepted).

[0288] like Figure 36As shown, except that the bottom surface of the first recessed portion R1 is located in the second multilayer film reflector 107 and the bottom surface of the second recessed portion R2 is located in the substrate 100, the surface emitting laser element 10-6 according to Modification 6 has a configuration similar to that of the surface emitting laser element 10 in one embodiment.

[0289] In the surface-emitting laser element 10-6, an oxide confinement layer 103 is disposed in the second multilayer reflector 107.

[0290] In the surface-emitting laser element 10-6, each mesa M does not have an active layer 105.

[0291] The surface-emitting laser element 10-6 exhibits effects substantially similar to those of an example surface-emitting laser element 10, but because H2-H1 is larger than that of an example surface-emitting laser element 10, the reduction in resistance difference is greater, and because the bottom surface of the second recessed portion R2 is located in the substrate 100, the effect of suppressing current diffusion from the outermost mesa to the second region A2 side is high.

[0292] That is, surface-emitting laser element 10⁻⁶ is particularly effective when the spacing between the platforms is small and the resistance difference between the outermost platform and other platforms M is large.

[0293] The surface-emitting laser element 10-6 can also be manufactured by a manufacturing method similar to that of an example surface-emitting laser element 10.

[0294] (Based on the surface-emitting laser element of Modification 7)

[0295] Figure 37 This is a cross-sectional view (part 1) of the surface-emitting laser element 10-7 in modified example 7. Figure 38 This is a cross-sectional view (part 2) of the surface-emitting laser element 10-7 in modified example 7. Figure 39 This is a plan view of the surface-emitting laser element 10-7 in Modified Example 7. Figure 37 It is along Figure 39 The cross-sectional view (YZ cross-sectional view) taken from line V7-V7. Figure 38 yes Figure 39 Cross-sectional view of line W7-W7 (XZ cross-sectional view).

[0296] like Figures 37 to 39 As shown, the surface-emitting laser element 10-7 according to Modification 7 has a configuration similar to that of the surface-emitting laser element 10 in one embodiment, except that the second region A2 includes a virtual mesa DM (the outermost mesa of the first region A1) adjacent to the mesa M of the adjacent second region A2, and the second recessed portion R2 is defined by the mesa M and the virtual mesa DM adjacent to the second region A2.

[0297] The virtual platform DM is a platform included in a non-light-emitting unit that is not equipped with contact holes CH and anode electrodes 110 and is not powered.

[0298] More specifically, in the surface-emitting laser element 10-7, each second region A2 includes a virtual platform DM disposed between the protrusion PP and the first region A1 and the protrusion PP.

[0299] In the surface-emitting laser element 10-7, the second recessed portion R2 is defined by the outermost mesa in the first region A1 and the virtual mesa DM in the second region A2.

[0300] According to the surface-emitting laser element 10-7, the current flowing through the mesa M (the outermost mesa of the first region A1) adjacent to the virtual mesa DM is suppressed from diffusing to the virtual mesa DM side. As a result, the resistance of the outermost mesa is reduced, the current is suppressed from concentrating on the outermost mesa, and the change in luminous intensity between the outermost mesa and the mesa M other than the outermost mesa can be reduced.

[0301] The surface-emitting laser element 10-7 can also be manufactured by a manufacturing method that is substantially similar to that of an example surface-emitting laser element 10.

[0302] (Based on the surface-emitting laser element of Modification 8)

[0303] Figure 38 This is a plan view of the surface-emitting laser element 10-8 in Modified Example 8.

[0304] In the surface-emitting laser element 10-8 according to Modified Example 8, such as Figure 40 As shown, the second region A2 has a frame shape in the plan view ( Figure 40 The area enclosed by a double-dotted line.

[0305] In the surface-emitting laser element 10-8, the YZ cross section obtained by cutting the second region A2 and the plurality of mesa M together, and the XZ cross section obtained by cutting the second region A2 and the plurality of mesa M together, are similar. The YZ and XZ cross sections of the surface-emitting laser element 10-8 are similar to the YZ cross section of any one of the surface-emitting laser elements 10, 10-1 to 10-6 in one embodiment and variation 1 to 6.

[0306] The surface-emitting laser element 10-8 exhibits essentially the same effect as an example surface-emitting laser element 10.

[0307] The surface-emitting laser element 10-8 can also be manufactured by a manufacturing method similar to that of an example surface-emitting laser element 10.

[0308] (Based on the surface-emitting laser element of Modification 9)

[0309] Figure 41 This is a plan view of the surface-emitting laser element 10-9 in Modified Example 9.

[0310] In the surface-emitting laser element 10-9 according to Modified Example 9, such as Figure 41 As shown, the second region A2 has a frame shape in the plan view (in... Figure 41 The area enclosed by a double-dotted line.

[0311] In the surface-emitting laser element 10-9, the YZ cross section obtained by cutting the second region A2 and the plurality of mesa M together, and the XZ cross section obtained by cutting the second region A2 and the plurality of mesa M together, are similar. The YZ and XZ cross sections of the surface-emitting laser element 10-9 are similar to the YZ cross section of the surface-emitting laser element 10-7 in modified example 7.

[0312] The surface-emitting laser element 10-9 exhibits a basically similar effect to the surface-emitting laser element 10-7 in Modified Example 7.

[0313] The surface-emitting laser element 10-9 can also be manufactured by a manufacturing method similar to that of an example surface-emitting laser element 10.

[0314] 8. <Other variations of the implementation of this technology>

[0315] The surface-emitting laser element according to this technology is not limited to the configuration described in the above embodiments and each variation, and can be changed appropriately.

[0316] In the above embodiments and each modification, a surface-emitting type in which the light-emitting unit emits light from the top side of the platform is described as an example of the surface-emitting laser element of the present technology. However, the surface-emitting laser element of the present technology can also be applied to a rear-surface-emitting type in which the light-emitting unit emits light towards the rear surface side of the substrate. In this case, an opening as an emission port needs to be provided at a position corresponding to each light-emitting unit in the electrodes provided on the rear surface of the substrate.

[0317] In the above embodiments and various modifications, the anode electrode is disposed on the top side of the mesa M, and the cathode electrode is disposed on the rear surface side of the substrate 100. However, the cathode electrode may be disposed on the top side of the mesa M, and the anode electrode may be disposed on the rear surface side of the substrate 100. In this case, it is also necessary to replace the conductivity type (p-type and n-type).

[0318] In the above examples and variations, both the first multilayer reflector 102 and the second multilayer reflector 107 are semiconductor multilayer reflectors, but are not limited thereto.

[0319] For example, the first multilayer reflector 102 can be a semiconductor multilayer reflector, and the second multilayer reflector 107 can be a dielectric multilayer reflector. A dielectric multilayer reflector is also a type of distributed Bragg reflector.

[0320] For example, the first multilayer reflector 102 may be a dielectric multilayer reflector, and the second multilayer reflector 107 may be a semiconductor multilayer reflector.

[0321] For example, both the first multilayer reflector 102 and the second multilayer reflector 107 can be dielectric multilayer reflectors.

[0322] In the surface-emitting laser element of the above embodiments and each variation, it is not necessary to provide the spacer layer 101.

[0323] In the surface-emitting laser elements of the above examples and various modifications, the oxide confinement layer 103 may be disposed inside either the first cladding layer 104 or the second cladding layer 106.

[0324] In the surface-emitting laser element of the above embodiments and each modified example, it is not necessary to provide a contact layer 108.

[0325] Some configurations of the surface-emitting laser elements in the above embodiments and variations can be combined within a range that do not contradict each other. For example, in the surface-emitting laser element of variation 10, the bottom surface of the first recessed portion R1 may be located in the second multilayer reflector 107, and the bottom surface of the second recessed portion R2 may be located in the first multilayer reflector 102.

[0326] In the above embodiments and each variation, the material, conductivity type, thickness, width, length, shape, size, arrangement, etc. of each component constituting the surface-emitting laser element can be appropriately changed within the scope of what is used as a surface-emitting laser element.

[0327] 9. <Examples of Electronic Device Applications>

[0328] The technology disclosed herein (the Technology) can be applied to a variety of products (electronic devices). For example, the Technology disclosed herein can be implemented as a component installed on any type of mobile body (such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, robots, etc.).

[0329] The surface-emitting laser element according to this technology can also be used as a light source, for example, in devices that form or display images by laser (e.g., laser printers, laser copiers, projectors, head-mounted displays, head-up displays, etc.).

[0330] 10. <Example of applying a surface-emitting laser element to a distance measurement device>

[0331] The following will describe application examples of the surface-emitting laser element according to the above embodiments and various modifications.

[0332] Figure 42 An example of a schematic configuration of a distance measuring device 1000 including a surface-emitting laser element 10 is shown as an example of an electronic device according to the present technology. The distance measuring device 1000 measures the distance to an object S using a time-of-flight (TOF) method. The distance measuring device 1000 includes a surface-emitting laser element 10 as a light source. The distance measuring device 1000 includes, for example, the surface-emitting laser element 10, a light receiving device 125, lenses 115 and 135, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0333] The light receiving device 125 detects the light reflected by the object S. The lens 115 is a lens used to calibrate the light emitted from the surface-emitting laser element 10, and is a calibration lens. The lens 135 is a lens used to converge the light reflected by the object S and guide the light to the light receiving device 125, and is a condenser lens.

[0334] The signal processing unit 140 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 150. The control unit 150 includes, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 150, or it may be the output signal of a detection unit that directly detects the output of the surface-emitting laser element 10. For example, the control unit 150 is a processor that controls the surface-emitting laser element 10, the light receiving device 125, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the object S based on the signal generated by the signal processing unit 140. The control unit 150 generates an image signal for displaying information related to the distance to the object S and outputs the image signal to the display unit 160. The display unit 160 displays information related to the distance to the object S based on the image signal input from the control unit 150. The control unit 150 stores the information about the distance to the object S in the storage unit 170.

[0335] In this application example, instead of the surface-emitting laser element 10, any one of the above-described surface-emitting laser elements 10-1, 10-2, 10-3, 10-4, 10-5, 10-6, 10-7, 10-8, and 10-9 can be applied to the distance measuring device 1000.

[0336] 11. <Example of a distance measuring device mounted on a moving body>

[0337] Figure 43 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology according to this disclosure can be applied.

[0338] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 43 In the example shown, the vehicle control system 12000 includes a driving system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, as examples of the functional structure of the integrated control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0339] The driving system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the driving system control unit 12010 is used as a control device for drive force generating devices (such as internal combustion engines, drive motors, etc.) that generate drive force for the vehicle, drive force transmission mechanisms that transmit drive force to the wheels, steering mechanisms that adjust the vehicle's steering angle, and braking devices that generate braking force for the vehicle.

[0340] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 serves as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, turn signals, fog lights, etc. In this case, radio waves or signals from various switches, which are alternatives to buttons, can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locks, power windows, lights, etc.

[0341] The external information detection unit 12030 detects external information about the vehicle on which the vehicle control system 12000 is installed. For example, a distance measuring device 12031 is connected to the external information detection unit 12030. The distance measuring device 12031 includes the aforementioned distance measuring device 1000. The external information detection unit 12030 uses the distance measuring device 12031 to measure the distance to an object (object S) outside the vehicle and obtains the distance data obtained through the measurement. The external information detection unit 12030 can perform object detection processing such as people, vehicles, obstacles, and signs based on the acquired distance data.

[0342] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is drowsy, based on detection information input from the driver state detection unit 12041.

[0343] The microcomputer 12051 can calculate control target values ​​for the drive force generation device, steering mechanism, or braking device based on information about the vehicle's interior or exterior obtained by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control designed to realize functions of an advanced driver assistance system (ADAS), including collision avoidance or shock absorption for the vehicle, following driving based on following distance, maintaining vehicle speed, collision warning, lane departure warning, etc.

[0344] In addition, the microcomputer 12051 controls the driving force generating device, steering mechanism, braking device, etc. based on the information about the vehicle's surroundings obtained by the external information detection unit 12030 or the internal information detection unit 12040, thereby performing coordinated control of autonomous driving and other functions that do not depend on the driver's operation.

[0345] Furthermore, the microcomputer 12051 can output control commands to the vehicle system control unit 12020 based on the external information obtained by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of the vehicle in front or oncoming vehicle detected by the external information detection unit 12030 to perform cooperative control for glare prevention, such as switching from high beam to low beam.

[0346] The sound / image output unit 12052 sends an output signal of at least one of sound or image to an output device capable of visually or audibly notifying vehicle occupants or the outside of the vehicle. Figure 43 In the example, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are shown as output devices. For example, the display unit 12062 may include at least one of an on-board display or a head-up display.

[0347] Figure 44 This is a diagram showing an example of the installation position of the distance measuring device 12031.

[0348] exist Figure 44 In the vehicle 12100, distance measuring devices 12101, 12102, 12103, 12104, and 12105 are used as distance measuring devices 12031.

[0349] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are installed, for example, inside the vehicle 12100 at locations such as the front nose, side mirrors, rear bumper, rear door, and upper part of the windshield. Distance measuring device 12101, installed at the front nose of the vehicle, and distance measuring device 12105, installed at the upper part of the windshield, primarily acquire data from the front of the vehicle 12100. Distance measuring devices 12102 and 12103, installed at the side mirrors, primarily acquire data from the sides of the vehicle 12100. Distance measuring device 12104, installed on the rear bumper or rear door, primarily acquires data from the rear of the vehicle 12100. The data acquired by distance measuring devices 12101 and 12105 from the front of the vehicle is mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0350] Notice, Figure 44 Examples of the detection ranges of distance measuring devices 12101 to 12104 are shown. Detection range 12111 indicates the detection range of distance measuring device 12101 located on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of distance measuring devices 12102 and 12103 located at the side mirrors, respectively, and detection range 12114 indicates the detection range of distance measuring device 12104 located on the rear bumper or rear door.

[0351] For example, based on distance data obtained from distance measuring devices 12101 to 12104, microcomputer 12051 obtains the distance to each three-dimensional object within the detection range 12111 to 12114 and the time change of that distance (relative speed relative to vehicle 12100). It then extracts three-dimensional objects traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher), particularly the three-dimensional objects closest to vehicle 12100 on its travel path, as the vehicles ahead. Furthermore, microcomputer 12051 can pre-set a following distance to stay ahead of the vehicles ahead and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. Thus, coordinated control for autonomous driving and other functions that do not rely on driver operation is possible.

[0352] For example, the microcomputer 12051 can classify three-dimensional object data related to three-dimensional objects into three-dimensional objects such as two-wheeled vehicles, standard vehicles, large vehicles, and pedestrians based on distance data obtained from distance measuring devices 12101 to 12104, extract the three-dimensional object data, and use the three-dimensional object data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. If the collision risk is higher than or equal to a set value and therefore there is a possibility of collision, the microcomputer 12051 can output a warning to the driver via audio speaker 12061 or display unit 12062, and execute forced deceleration or avoidance steering via driving system control unit 12010 to perform driving assistance for collision avoidance.

[0353] Examples of mobile body control systems to which the technology according to this disclosure can be applied have been described above. The distance measuring device 12031 in the above configuration is applicable to the technology of this application.

[0354] In addition, this technology may also have the following configurations.

[0355] (1) A surface-emitting laser element, comprising: substrate; An electrode is disposed on one surface of a substrate; A first region is disposed on a surface opposite to the electrode side, and multiple light-emitting units with mesa are arranged in the first region; and The second region is arranged around the first region on the side of a surface opposite to the side of the electrode. The depth dimension of the second recessed portion defined by the platform adjacent to the second region and the second region among the platforms of the plurality of light-emitting units is greater than the depth dimension of the first recessed portion defined by the two platforms adjacent to each other among the platforms of the plurality of light-emitting units.

[0356] (2) The surface-emitting laser element according to (1), wherein the electrode is a common electrode provided for multiple light-emitting units.

[0357] (3) The surface-emitting laser element according to (1) or (2), wherein the second region includes a virtual platform adjacent to the platform adjacent to the second region, and the second recessed portion is defined by the platform adjacent to the second region and the virtual platform.

[0358] (4) A surface-emitting laser element according to any one of (1) to (3), wherein, in a direction perpendicular to the substrate, the bottom surface of the second recessed portion is located closer to a surface than the bottom surface of the first recessed portion.

[0359] (5) A surface-emitting laser element according to any one of (1) to (4), wherein the opening ends of the first recessed portion and the second recessed portion are substantially flush.

[0360] (6) A surface-emitting laser element according to any one of (1) to (5), wherein the bottom surfaces of the first recessed portion and the second recessed portion are both located on one side of the substrate opposite to one side of the other surface.

[0361] (7) A surface-emitting laser element according to any one of (1) to (6), wherein the bottom surface of the first recessed portion is located on one side of the substrate opposite to one side of the other surface, and the bottom surface of the second recessed portion is located in the substrate.

[0362] (8) A surface-emitting laser element according to any one of (1) to (7), wherein the bottom surfaces of the first recessed portion and the second recessed portion are both located in the substrate.

[0363] (9) A surface-emitting laser element according to any one of (1) to (8), wherein the first region and the second region are disposed at different positions in the in-plane direction of a laminated structure including a substrate, and in the laminated structure, the first multilayer reflector, the active layer and the second multilayer reflector are laminated in this order on one side of a surface opposite to one side of the electrode.

[0364] (10) The surface-emitting laser element according to (9), wherein the bottom surfaces of the first recessed portion and the second recessed portion are both located in the first multilayer film reflector.

[0365] (11) The surface-emitting laser element according to (9), wherein the bottom surface of the first recessed portion is located in the second multilayer film reflector, and the bottom surface of the second recessed portion is located in the first multilayer film reflector.

[0366] (12) The surface-emitting laser element according to (9), wherein the bottom surface of the first recessed portion is located in the first multilayer reflector and the bottom surface of the second recessed portion is located in the substrate.

[0367] (13) The surface-emitting laser element according to (9), wherein the bottom surface of the first recessed portion is located in the second multilayer film reflector, and the bottom surface of the second recessed portion is located in the substrate.

[0368] (14) The surface-emitting laser element according to (9), wherein the bottom surfaces of the first recessed portion and the second recessed portion are both located in the second multilayer film reflector.

[0369] (15) A surface-emitting laser element according to any one of (1) to (14), wherein, in a cross section obtained by cutting two adjacent mesa and a second region together, the width of the second recess is greater than the width of the first recess.

[0370] (16) A surface-emitting laser element according to any one of (1) to (15), wherein another common electrode is disposed on the top of at least one mesa adjacent to the second region and on the top of at least two mesa not adjacent to the second region.

[0371] (17) A surface-emitting laser element according to any one of (1) to (16), wherein the spacing between the centers of two adjacent mesa is more than 10 μm and less than 50 μm.

[0372] (18) A surface-emitting laser element according to any one of (1) to (17), wherein the difference in depth dimension between the first recess and the second recess is set based on the spacing between the centers of two adjacent mesa.

[0373] (19) A surface-emitting laser element according to any one of (1) to (18), wherein the difference in depth dimension between the first recess and the second recess is set to be greater as the spacing between the centers of two adjacent mesas becomes narrower.

[0374] (20) An electronic device comprising a surface-emitting laser element according to any one of (1) to (19).

[0375] (21) A method for manufacturing a surface-emitting laser element, the method comprising: A laminate is produced by laminating a first multilayer reflector, an active layer, and a second multilayer reflector onto a substrate in this order. A first region and a second region are formed by etching a laminate. The first region contains multiple light-emitting units, including mesas, and the second region surrounds the first region. An electrode is formed on the surface of the substrate on the side opposite to the surface on the first multilayer reflector. In forming the first region and the second region, the laminate is etched such that the depth dimension of the second recess defined by the mesa of the plurality of light-emitting units adjacent to the second region and the second region are greater than the depth dimension of the first recess defined by the two mesas of the plurality of light-emitting units adjacent to each other.

[0376] (22) The method for manufacturing a surface-emitting laser element according to (21), wherein, when forming the electrode, the electrode is formed on the surface of a substrate on a side opposite to the side surface of the first multilayer reflector in a region corresponding to at least a first region and a second region.

[0377] (23) The method for manufacturing a surface-emitting laser element according to (21) or (22), wherein, in forming a first region and a second region, one of the first region and the second region is formed by etching a laminate, and the other of the first region and the second region is formed by etching a laminate on which one is formed.

[0378] Reference Symbol List

[0379] Surface-emitting laser elements of 10, 10⁻¹ to 10⁻⁹

[0380] 100 substrates

[0381] One surface of a 100a substrate

[0382] The other surface of the 100b substrate

[0383] 102 First Multilayer Reflector

[0384] 103 Oxidation confinement layer

[0385] 105 Active Layer

[0386] 107 Second Multilayer Reflector

[0387] 110 Anode electrode (the other electrode)

[0388] 111 Cathode electrode (electrode)

[0389] 1000 Distance measuring device (electronic device)

[0390] LEP light-emitting unit

[0391] A1 First Area

[0392] A2 Second Area

[0393] M countertop

[0394] DM Virtual Desktop

[0395] R1 First Depression

[0396] R2 Second Depression

[0397] H1 Depth dimension of the first recessed portion

[0398] H2 Depth dimension of the second recessed portion.

Claims

1. A surface-emitting laser element, comprising: substrate; An electrode is disposed on one surface of the substrate; A first region is disposed on a side of a surface opposite to one side of the electrode, and a plurality of light-emitting units having a mesa are arranged in the first region; as well as A second region is disposed around the first region on the side of the surface opposite to one side of the electrode. The second region includes a virtual mesa adjacent to the mesa, the mesa being adjacent to the second region. Wherein, the depth dimension of the second recessed portion defined by the platform adjacent to the second region and the second region in the mesa of the plurality of light-emitting units is greater than the depth dimension of the first recessed portion defined by two adjacent platforms in the mesa of the plurality of light-emitting units. The second recessed portion is defined by the platform and the virtual platform adjacent to the second region.

2. The surface-emitting laser element according to claim 1, wherein, The electrode is a common electrode provided for the multiple light-emitting units.

3. The surface-emitting laser element according to claim 1, wherein, The bottom surface of the second recessed portion is located closer to the surface than the bottom surface of the first recessed portion in a direction perpendicular to the substrate.

4. The surface-emitting laser element according to claim 1, wherein, The opening ends of the first recessed portion and the second recessed portion are flush.

5. The surface-emitting laser element according to claim 1, wherein, The bottom surfaces of the first recessed portion and the second recessed portion are both located on one side of the other surface of the substrate, which is opposite to one side of the first surface.

6. The surface-emitting laser element according to claim 1, wherein, The bottom surface of the first recessed portion is located on one side of the other surface of the substrate opposite to one side of the first surface, and The bottom surface of the second recessed portion is located in the substrate.

7. The surface-emitting laser element according to claim 1, wherein, The bottom surfaces of both the first recessed portion and the second recessed portion are located in the substrate.

8. The surface-emitting laser element according to claim 1, wherein, The first region and the second region are disposed at different positions in the in-plane direction of the laminated structure including the substrate; and In the laminated structure, the first multilayer reflector, the active layer, and the second multilayer reflector are sequentially laminated on the side of the surface opposite to the side of the electrode.

9. The surface-emitting laser element according to claim 8, wherein, The bottom surfaces of both the first recessed portion and the second recessed portion are located within the first multilayer film reflector.

10. The surface-emitting laser element according to claim 8, wherein, The bottom surface of the first recessed portion is located in the second multilayer film reflector, and The bottom surface of the second recessed portion is located in the first multilayer film reflector.

11. The surface-emitting laser element according to claim 8, wherein, The bottom surface of the first recessed portion is located within the first multilayer film reflector, and The bottom surface of the second recessed portion is located in the substrate.

12. The surface-emitting laser element according to claim 8, wherein, The bottom surface of the first recessed portion is located in the second multilayer film reflector, and The bottom surface of the second recessed portion is located in the substrate.

13. The surface-emitting laser element according to claim 8, wherein, The bottom surfaces of both the first recessed portion and the second recessed portion are located within the second multilayer film reflector.

14. The surface-emitting laser element according to claim 1, wherein, In the cross-section obtained by cutting together the two adjacent surfaces and the second region, the width of the second recessed portion is greater than the width of the first recessed portion.

15. The surface-emitting laser element of claim 1, further comprising another electrode, the other electrode being configured to contact the top of at least one mesa adjacent to the second region and the tops of at least two mesas not adjacent to the second region.

16. The surface-emitting laser element according to claim 1, wherein, The distance between the centers of two adjacent platforms is more than 10 μm and less than 50 μm.

17. An electronic device comprising a surface-emitting laser element according to claim 1.

18. A method for manufacturing a surface-emitting laser element, the method comprising: A laminate is formed by sequentially laminating a first multilayer reflector, an active layer, and a second multilayer reflector onto a substrate. A first region and a second region are formed by etching the laminate. A plurality of light-emitting units, including a mesa, are disposed in the first region, and the second region surrounds the first region. The second region includes a virtual mesa adjacent to the mesa, and the mesa is adjacent to the second region. as well as An electrode is formed on the surface of the substrate opposite to the surface on one side of the first multilayer reflector. In the process of forming the first region and the second region, the laminate is etched such that the depth dimension of the second recessed portion defined by the mesa adjacent to the second region and the second region in the mesa of the plurality of light-emitting units is greater than the depth dimension of the first recessed portion defined by two adjacent mesas in the mesa of the plurality of light-emitting units, the second recessed portion being defined by the mesa adjacent to the second region and the virtual mesa.

19. The method for manufacturing a surface-emitting laser element according to claim 18, wherein, When forming the electrode, the electrode is formed in at least a region corresponding to the first region and the second region on a surface of the substrate on a side opposite to the surface on one side of the first multilayer reflector.

Images