Ion implantation energy detection method, device, electronic device, and storage medium

Abstract

This application discloses a method, device, electronic device, and storage medium for detecting ion implantation energy. The method includes: in response to the detection device being in a first operating state, performing a first processing on the ion beam to be detected to obtain a first target ion; in response to the detection device being in a second operating state, obtaining a second target ion based on the ion beam to be detected; and determining whether the ion beam to be detected is a desired ion beam based on the energy parameters of the first target ion and the second target ion. This effectively enables the detection or identification of desired and undesired ion beams.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method, apparatus, electronic device, and storage medium for detecting ion implantation energy. Background Technology

[0002] In integrated circuit manufacturing, ion implantation typically refers to the process of bombarding a silicon substrate with charged particles (ions) of a certain energy at high speed and implanting them into the substrate. Standard ion beam energies are specified for ion implantation. Different ion implantation processes may have different specified standard ion beam energies. The reason for specifying corresponding standard ion beam energies for different ion implantation processes is to ensure the successful fabrication of devices such as CMOS transistors. However, in practical applications, the actual energy of the ion beam implanted into the substrate may differ from the standard energy. For example, in a low-energy ion implantation process, the presence of a high-energy ion beam can introduce the potential risk or adverse effects of penetration between the source, drain, and gate of a CMOS (Complementary Metal-Oxide-Semiconductor) transistor. Summary of the Invention

[0003] This application provides a method, device, electronic device, and storage medium for detecting ion implantation energy, in order to at least solve the above-mentioned technical problems existing in the prior art.

[0004] According to a first aspect of this application, a method for detecting ion implantation energy is provided, applied in an ion implantation energy detection device, the method comprising:

[0005] In response to the detection device being in a first working state, the ion beam to be detected is subjected to a first processing to obtain a first target ion;

[0006] In response to the detection device being in a second working state, a second target ion is obtained based on the ion beam to be detected;

[0007] Based on the energy parameters of the first target ion and the second target ion, it is determined whether the ion beam to be detected is the desired ion beam.

[0008] In one possible implementation, the first processing of the ion beam to be detected to obtain a first target ion beam includes:

[0009] Ions with energies higher than the standard energy are selected from the ion beam to be detected;

[0010] Ions with energies higher than the standard energy will be selected as the first target ions.

[0011] In one possible implementation, obtaining the second target ion based on the ion beam to be detected includes:

[0012] The ions in the ion beam to be detected are used as the second target ions.

[0013] In one possible implementation, determining whether the ion beam to be detected is the desired ion beam based on the energy parameters of the first target ion and the second target ion includes:

[0014] The energy parameters of the first target ion are compared with the energy parameters of the second target ion by M times, where M is a positive number less than 1;

[0015] When the energy parameters of the first target ion and the energy parameters of the second target ion are M times greater than the first energy condition, the ion beam to be detected is determined to be the desired ion beam.

[0016] In one possible implementation, the method further includes:

[0017] When the energy parameters of the first target ion and the second target ion are M times less than the first energy condition,

[0018] In response to the detection device being in a first working state, the ion beam to be detected is subjected to N first processing steps to obtain N third target ions;

[0019] In response to the detection device being in the second working state, N fourth target ions are obtained based on the ion beam to be detected; where N is a positive integer greater than or equal to 1.

[0020] Based on the energy parameters of each third target ion, each fourth target ion, the energy parameters of the first target ion, and the energy parameters of the second target ion, it is determined whether the ion beam to be detected is the desired ion beam.

[0021] In one possible implementation, the detection device includes an offset subsystem and a filtration subsystem;

[0022] The step of selecting ions with energies higher than the standard energy from the ion beam to be detected includes:

[0023] The offset subsystem is powered on in the first working state of the detection equipment;

[0024] From the ion beam to be detected, ions with energy lower than the standard energy are filtered out by a canceling subsystem that is in an energized state.

[0025] From the ion beam to be detected, which has already had ions with energy lower than the standard energy filtered out, the filtration subsystem is used to filter out ions with energy equal to the standard energy, so as to obtain ions with energy higher than the standard energy.

[0026] In one possible implementation, the detection device includes an offset subsystem and a filtration subsystem;

[0027] The offset subsystem is in a de-energized state in the second operating state of the detection equipment;

[0028] The ions in the ion beam to be detected travel through the cancellation subsystem in a non-energized state and through the filtration subsystem to obtain the second target ion.

[0029] According to a second aspect of this application, an ion implantation energy detection device is provided, comprising:

[0030] The first processing module is used to perform a first processing on the ion beam to be detected in response to being in a first working state, so as to obtain a first target ion;

[0031] The second processing module is used to obtain the second target ion based on the ion beam to be detected in response to being in the second working state;

[0032] The determination module is used to determine whether the ion beam to be detected is the desired ion beam based on the energy parameters of the first target ion and the energy parameters of the second target ion.

[0033] According to a third aspect of this application, an electronic device is provided, comprising:

[0034] At least one processor; and a memory communicatively connected to said at least one processor; wherein,

[0035] The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method described in this application.

[0036] According to a fourth aspect of this application, a non-transitory computer-readable storage medium is provided storing computer instructions for causing the computer to perform the methods described in this application.

[0037] The ion implantation energy detection method, device, electronic device, and storage medium of this application enable the detection of different target ions under two operating states of the detection device, and, based on the energy parameters of the different target ions under the two operating states, determine whether the ion beam to be detected is the desired ion beam. This effectively enables the detection or identification of desired and undesired ion beams, thereby effectively avoiding the risk of CMOS transistor breakdown caused by using undesired ion beams for ion implantation.

[0038] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this application, nor is it intended to limit the scope of this application. Other features of this application will become readily apparent from the following description. Attached Figure Description

[0039] The above and other objects, features, and advantages of exemplary embodiments of this application will become readily apparent from the following detailed description taken in conjunction with the accompanying drawings. Several embodiments of this application are illustrated in the drawings by way of example and not limitation, in which:

[0040] In the accompanying drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

[0041] Figure 1 A schematic diagram of the composition of the detection device in an embodiment of this application is shown;

[0042] Figure 2 This paper illustrates the implementation flow of the ion implantation energy detection method in an embodiment of this application. Figure 1 ;

[0043] Figure 3 A schematic diagram of the detection device in a first working state according to an embodiment of this application is shown;

[0044] Figure 4 A schematic diagram of the detection device in a second working state in an embodiment of this application is shown;

[0045] Figure 5 This paper illustrates the implementation flow of the ion implantation energy detection method in an embodiment of this application. Figure 2 ;

[0046] Figure 6 A schematic diagram of the structure of the ion implantation energy detection device in an embodiment of this application is shown;

[0047] Figure 7 A schematic diagram of the composition structure of the electronic device in an embodiment of this application is shown.

[0048] Explanation of the labels in the diagram:

[0049] 100. Energy cancellation subsystem;

[0050] 110. First graphite sheet;

[0051] 120. Second graphite sheet;

[0052] 130. Power Supply (PS);

[0053] 200. Filtration subsystem;

[0054] 210. The first magnet;

[0055] 220. The second magnet;

[0056] 300. Test Subsystem;

[0057] 310. Faraday Cup;

[0058] 320. Ammeter. Detailed Implementation

[0059] To make the objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0060] One of the technical objectives of this application is to detect whether the ion beam used in the ion implantation process is the desired ion beam, that is, to detect whether the ion beam used in the ion implantation process is a standard energy ion beam or an ion beam close to the standard energy, so as to minimize the risk of CMOS transistor breakdown.

[0061] The ion implantation energy detection method in this application is applied to an ion implantation energy detection device. This detection device can also be referred to as an ion beam energy test system (BETS).

[0062] Figure 1 A schematic diagram of the composition of the detection device in an embodiment of this application is shown, such as... Figure 1 As shown, the detection device includes an energy counteracting subsystem 100, which comprises a graphite assembly and a power supply (Energy PS) 130. The graphite assembly includes a first graphite sheet 110 and a second graphite sheet 120. The first graphite sheet 110 and the second graphite sheet 120 generate a force when powered by the power supply (Energy PS) 130, and do not generate a force when the power supply (Energy PS) 130 is not powered. The negative terminal of the power supply (Energy PS) 130 is connected to the first graphite sheet 110, and the positive terminal of the power supply (Energy PS) 130 is connected to the graphite sheet 120. The first graphite sheet 110 and the second graphite sheet 120 are arranged opposite each other, and a certain distance must be maintained between them.

[0063] like Figure 1As shown, the detection device includes a filtration subsystem 200, which includes a first magnet 210 and a second magnet 220. The first magnet 210 and the second magnet 220 are permanent magnets or electromagnets. The first magnet 210 and the second magnet 220 have opposite magnetic properties, and a magnetic field can be formed between them. Physically, the area below the first magnet 210 and above the second magnet 220, i.e., the area near the magnetic field, can be encased in graphite to achieve better magnetic properties.

[0064] like Figure 1 As shown, the detection device includes a test subsystem 300, which comprises a Faraday cup 310 and an ammeter 320. For every positron entering the Faraday cup 310, a negative electron neutralizes it, thus creating an electric current. The current value is displayed on the ammeter 320. In this design, the current value displayed on the ammeter 320 is used as an energy parameter.

[0065] The testing equipment in this application is physically separated into three subsystems by insulating materials or not connected, so as to achieve electrical isolation between the subsystems.

[0066] The detection device in this application can generate different energy values ​​for the same ion beam to be detected based on whether the power supply (Energy PS) 130 in the cancellation subsystem 100 is powered on or not powered on. For example, the ammeter 320 will display different current values. Based on the different energy values, the detection of whether the ion beam to be detected is the desired ion beam can be achieved.

[0067] Figure 2 This paper illustrates the implementation flow of the ion implantation energy detection method in an embodiment of this application. Figure 1 .like Figure 2 As shown, the method includes:

[0068] S201: In response to the detection equipment being in the first working state, the ion beam to be detected is subjected to the first processing to obtain the first target ion.

[0069] S202: In response to the detection device being in the second working state, a second target ion is obtained based on the ion beam to be detected.

[0070] S203: Based on the energy parameters of the first target ion and the second target ion, determine whether the ion beam to be detected is the desired ion beam.

[0071] In this application, a device or apparatus capable of generating an ion beam generates a target ion beam (BEAM). The target ion beam is a positive ion beam. Under two operating states of the detection equipment, different target ions (a first target ion and a second target ion) are detected. Based on the energy parameters of the different target ions under the two operating states, it is possible to detect whether the target ion beam is the desired ion beam. This effectively enables the detection or identification of desired and undesired ion beams, thereby effectively avoiding the risk of CMOS transistor breakdown caused by using undesired ion beams for ion implantation.

[0072] In layman's terms, the technical solution of this application is to detect the energy parameters of the ion beam to be tested under two working states of the detection equipment, and based on the detected energy parameters under the two working states, to detect whether the ion beam to be tested is the desired ion beam, thereby achieving accurate detection or identification of desired and undesired ion beams.

[0073] In some embodiments, the technical solution for performing a first processing on the ion beam to be detected to obtain a first target ion beam is: screening out ions with energies higher than standard energies from the ion beam to be detected; and using the screened ions with energies higher than standard energies as the first target ions.

[0074] In the detection equipment, the scheme for screening ions with energy higher than the standard energy (the first target ion) is as follows: the cancellation subsystem is energized in the first operating state of the detection equipment; from the ion beam to be detected, the energized cancellation subsystem filters out ions with energy lower than the standard energy; from the ion beam to be detected with ions with energy lower than the standard energy already filtered out, the filtration subsystem filters out ions with energy equal to the standard energy, thus obtaining ions with energy higher than the standard energy. In other words, when the cancellation subsystem is powered, the functions of the cancellation subsystem and the filtration subsystem are used to achieve the screening of the first target ion. This method is highly feasible in engineering applications.

[0075] In some embodiments, the technical solution for obtaining the second target ion based on the ion beam to be detected is to use the ion in the ion beam to be detected as the second target ion.

[0076] In the detection equipment, the scheme for acquiring the second target ion is as follows: the cancellation subsystem is in a de-energized state in the second operating state of the detection equipment; ions in the ion beam to be detected travel through the de-energized cancellation subsystem and the filtering subsystem to obtain the second target ion. That is, when the cancellation subsystem is not powered, the functions of the cancellation subsystem and the filtering subsystem are disabled, and the ions in the ion beam to be detected can travel through the disabled cancellation subsystem and filtering subsystem, thus obtaining the ions reaching the testing subsystem as the second target ion. This scheme for acquiring the second target ion is easy to implement and has good feasibility in engineering.

[0077] In this application, the testing equipment includes two operating states: a first operating state and a second operating state. If the first operating state refers to the testing equipment being powered, then the second operating state refers to the testing equipment being unpowered. The reverse is also true. Unless otherwise specified, in this application, the first operating state refers to the testing equipment being powered, and the second operating state refers to the testing equipment being unpowered.

[0078] When the detection equipment is powered, it means that the power supply (Energy PS) in the cancellation subsystem is pressurized, and the cancellation subsystem is powered on in the first operating state of the detection equipment. When the detection equipment is not powered, it means that the power supply (Energy PS) in the cancellation subsystem is not pressurized, and the cancellation subsystem is de-powered in the second operating state of the detection equipment.

[0079] Figure 3 A schematic diagram of the detection device in its first working state according to an embodiment of this application is shown. Figure 3As shown, in the first operating state of the detection equipment, the power supply (Energy PS) 130 is energized. Typically, the energizing energy of the power supply (Energy PS) 130 is the same as or close to the standard energy of the ion beam to be detected. When the ion source generates the ion beam to be detected, the ion beam enters the detection equipment, specifically first entering the cancellation subsystem 100. With the power supply (Energy PS) 130 energized, a force is generated between the first graphite sheet 110 and the second graphite sheet 120 under the power supply (Energy PS) 130. The direction of this force is from the second graphite sheet 120 towards the first graphite sheet 110, opposite to the direction of entry of the ion beam to be detected. Thus, it can be considered that energizing the power supply (Energy PS) 130 is equivalent to providing a reverse force to the ion beam to be detected as it enters the detection equipment. The force generated between the first graphite sheet 110 and the second graphite sheet 120 under power supply (Energy PS) 130 can prevent ions in the ion beam to be detected with energy lower than the standard energy of the ion beam from entering the filtering subsystem 200 from the cancellation subsystem 100. That is, the cancellation subsystem 100, when energized, filters out ions in the ion beam to be detected with energy lower than the standard energy. Ions in the ion beam to be detected with energy higher than and / or equal to the standard energy enter the filtering subsystem 200 from the cancellation subsystem 100. The two permanent magnets in the filtering subsystem 200 generate a weak magnetic field. Ions with energy equal to the standard energy entering the filtering subsystem 200 can be regarded as positrons that have lost kinetic energy after passing through the cancellation subsystem 100. The rotation radius of the positrons is zero or close to zero. Under the influence of the weak magnetic field, they continue to rotate and are eventually absorbed by the graphite surrounding the filtering subsystem 200, and will not enter the testing subsystem 300. Ions with energies higher than the standard energy in the ion beam to be detected travel through the filtration subsystem 200 and then enter the testing subsystem 300. The neutralization of positive and negative electrons forms a current, and the current value is displayed on the ammeter 320.

[0080] As can be seen from the aforementioned scheme, when the power supply (Energy PS) 130 is powered on, ions in the ion beam to be detected with energy lower than the standard energy are canceled out by the cancellation subsystem 100, and ions with energy equal to the standard energy are filtered out by the filtering subsystem 200. If there are ions in the ion beam to be detected with energy higher than the standard energy, the ammeter 320 will display a positive value. If there are no ions in the ion beam to be detected with energy higher than the standard energy, the ammeter 320 will display zero.

[0081] If ammeter 320 displays a positive value, it indicates the presence of ions with energies higher than the standard in the ion beam being tested. Using such an ion beam for ion implantation may cause CMOS transistor breakdown due to excessive energy. If ammeter 320 displays zero, it indicates the absence of ions with energies higher than the standard in the ion beam being tested, and such an ion beam is suitable for use in ion implantation processes.

[0082] If the energy generated by ions with energies higher than the standard in the ion beam to be tested is considered as contamination energy, then the scheme with the power supply (Energy PS) 130 powered on is equivalent to a scheme for detecting the presence of contamination energy in the ion beam to be tested. If ammeter 320 shows zero, it indicates that there is no contamination energy in the ion beam to be tested, and such an ion beam can be used for ion implantation. If ammeter 320 shows a positive value, it indicates that there is contamination energy in the ion beam to be tested, and such an ion beam cannot be used for ion implantation.

[0083] Figure 4 A schematic diagram of the detection device in a second working state according to an embodiment of this application is shown. Figure 4 As shown, in the second operating state of the detection equipment, the power supply (Energy PS) 130 is not energized. The first graphite sheet 110 and the second graphite sheet 120 do not generate a reverse force to block the entry of the ion beam to be detected, equivalent to the failure of the cancellation subsystem 100. The ion beam to be detected can pass through the cancellation subsystem 100 and enter the filtering subsystem 200. Because of the failure of the cancellation subsystem 110, the ions entering the filtering subsystem 200 do not generate positrons with a rotation radius of zero or close to zero. The graphite surrounding the filtering subsystem 200 naturally does not absorb electrons. The ions entering the filtering subsystem 200 pass through the filtering subsystem 200 and reach the test subsystem 300. In the test subsystem 300, the neutralization of positive and negative electrons forms a current, and the ammeter 320 displays the formed current value.

[0084] As can be seen from the aforementioned scheme, when the power supply (Energy PS) 130 is not powered, the ions in the ion beam to be detected travel through the cancellation subsystem 100 and the filtering subsystem 200, and the ion energy in the ion beam to be detected, such as the current value, is displayed on the ammeter 320. The scheme when the power supply (Energy PS) 130 is not powered is essentially a scheme for detecting the energy of the ion beam to be detected.

[0085] In layman's terms, the scheme with the detection equipment in its first operating state can be considered as a scheme to detect whether there is contamination energy in the ion beam to be tested. The scheme with the detection equipment in its second operating state can be considered as a scheme to detect the energy of the ion beam to be tested. Having detected both the presence of contamination energy in the ion beam and the energy of the ion beam to be tested, it is necessary to combine the detection results obtained in both operating states to confirm whether the ion beam to be tested is the desired ion beam.

[0086] In this application, the technical solution for determining whether the ion beam to be detected is the desired ion beam based on the energy parameters of the first target ion and the second target ion can be:

[0087] The energy parameters of the first target ion and the energy parameters of the second target ion are compared with M times the energy parameters of the second target ion, where M is a positive number less than 1; when the energy parameters of the first target ion and the energy parameters of the second target ion are M times the first energy condition, the ion beam to be detected is determined to be the desired ion beam.

[0088] The ammeter 320's display value when the power supply (Energy PS) 130 is energized is used as the energy parameter of the first target ion. The ammeter 320's display value when the power supply (Energy PS) 130 is de-energized is used as the energy parameter of the second target ion. If the ammeter 320 displays a current value A1 when the power supply (Energy PS) 130 is energized, it displays a current value A0 when the power supply (Energy PS) 130 is de-energized.

[0089] Comparing the values ​​of A0 and A1, taking M = 1 / 100 as an example, where the first energy condition is met: the energy parameter of the first target ion is less than or equal to M * the energy parameter of the second target ion. If A1 ≤ 1 / 100 * A0, meaning A1 is less than or equal to one percent of A0, it indicates that the ion beam to be detected contains contamination energy, and this contamination energy is less than or equal to one percent of the energy of the ion beam to be detected. This falls under the category of low and controllable contamination energy. Such an ion beam can be used as the desired ion beam for subsequent ion implantation processes.

[0090] If A1 > 1 / 100 * A0, meaning A1 is greater than one percent of A0, it indicates that the ion beam to be detected contains contamination energy, and this contamination energy is greater than one percent of the energy of the ion beam to be detected. This is a case of high and uncontrollable contamination energy. If such an ion beam is used in the ion process, it may cause CMOS transistors to break down. Therefore, such an ion beam cannot be used in the ion implantation process.

[0091] The aforementioned scheme determines the ion beam to be detected as a non-desired ion beam when the energy parameters of the first and second target ions, when M times the first energy parameter, do not meet the first energy condition. Furthermore, when the energy parameters of the first and second target ions, when M times the first energy parameter, do not meet the first energy condition, the following scheme can also be used to confirm whether the ion beam to be detected is the desired ion beam:

[0092] In response to the detection device being in the first working state, the ion beam to be detected is subjected to N first processing steps to obtain N third target ions; in response to the detection device being in the second working state, based on the ion beam to be detected, N fourth target ions are obtained; where N is a positive integer greater than or equal to 1; based on the energy parameters of each third target ion, each fourth target ion, the energy parameters of the first target ion, and the energy parameters of the second target ion, it is determined whether the ion beam to be detected is the desired ion beam.

[0093] Taking N=1 as an example, when the energy parameters of the first target ion and the energy parameters of the second target ion (M times) do not meet the first energy condition, the power supply (Energy PS) 130 is powered on, and the detection device enters the first working state, executing the scheme under the power supply (Energy PS) 130 power supply for N=1 times. See the relevant description for details. The third target ion can be considered as an ion in the ion beam to be detected with an energy higher than the standard energy obtained under this power supply (Energy PS) 130 power supply scheme. The energy of such ions is displayed as the current value B1 on the ammeter. When the power supply (Energy PS) 130 is cut off, the detection device enters the second working state, executing the scheme under the power supply (Energy PS) 130 power-off scheme for N=1 times. See the relevant description for details. The fourth target ion can be considered as all ions in the ion beam to be detected obtained under this power supply (Energy PS) 130 power-off scheme. The energy of such ions is displayed as the current value B0 on ​​the ammeter.

[0094] Comparing the values ​​of B0 and B1, if B1 is greater than 1 / 100*B0, and together with the previous conclusion that A1 > 1 / 100*A0, it indicates that in each of the N+1=2 confirmation schemes, there is contamination energy in the same ion beam to be detected, and the contamination energy is greater than one percent of the energy of the ion beam to be detected. Therefore, it can be finally confirmed that the ion beam to be detected is an undesirable ion beam.

[0095] Figure 5 This paper illustrates the implementation flow of the ion implantation energy detection method in an embodiment of this application. Figure 2 .like Figure 5As shown, in practical applications, the technical solution of this application can be applied to a testing equipment, which includes at least a computing module (computer) and a dosing controller (dose controller). The computing module is used to initiate the calculation of the energy of the ion beam to be detected. The dosing controller is used to generate the ion beam to be detected (BETS). Responding to the command issued by the computing module, the detection device enters a first working state, executes the scheme in the first working state once, and obtains a current value A1. The computing module issues a switching command to the detection device, causing the detection device to switch from the first working state to a second working state, executes the scheme in the second working state once, and obtains a current value A0. If A1 ≤ 1 / 100 * A0, it indicates that the ion beam to be detected is the desired ion beam, the flag bit M = 0, and the process ends.

[0096] If A1 is greater than 1 / 100*A0, to avoid misjudgment in a single detection, N more detections are needed, such as N=2 more detections. If A1 is greater than 1 / 100*A0, L's initial value is 0, and L is a positive integer, then L = L + 1 = 1. When L = 1 and less than or equal to N = 2, the metering control module generates an ion beam again. Responding to the command issued by the calculation module, the detection device enters the first working state, executes the scheme in the first working state once, and obtains a current value B1. The detection device switches from the first working state to the second working state, executes the scheme in the second working state once, and obtains a current value B0. If B1 is greater than 1 / 100*B0, then L = L + 1 = 2. When L = 2 and less than or equal to N = 2, responding to the command issued by the calculation module, the detection device enters the first working state, executes the scheme in the first working state once, and obtains a current value C1. The detection equipment switches from the first operating state to the second operating state, executes the scheme in the second operating state once, and obtains a current value C0. If C1 is greater than 1 / 100*C0, then L = L + 1 = 3, which is greater than N, confirming that the ion beam to be detected is an undesirable ion beam. That is, if A1 is greater than 1 / 100*A0 in a single comparison, N more comparisons are performed. If all N comparisons indicate that the ion beam to be detected contains contamination energy that is uncontrollable, then the ion beam to be detected is confirmed to be an undesirable ion beam.

[0097] In short, if A1 > 1 / 100 * A0, the machine needs to repeat the S201 to S202 scheme one or more times and make N comparisons. If the contamination energy in the ion beam to be detected is greater than one percent of the ion beam energy in all N comparisons, the machine should be stopped to confirm the cause of the undesired ion beam.

[0098] Figure 6 A schematic diagram of the ion implantation energy detection device in an embodiment of this application is shown. Figure 6 As shown, this application also provides an ion implantation energy detection device, the method of which includes:

[0099] The first processing module 601 is used to perform a first processing on the ion beam to be detected in response to being in a first working state, so as to obtain a first target ion;

[0100] The second processing module 602 is used to obtain the second target ion based on the ion beam to be detected in response to being in the second working state;

[0101] The determination module 603 is used to determine whether the ion beam to be detected is the desired ion beam based on the energy parameters of the first target ion and the energy parameters of the second target ion.

[0102] In some embodiments, the first processing module 601 is further configured to:

[0103] Ions with energies higher than the standard energy are selected from the ion beam to be detected;

[0104] Ions with energies higher than the standard energy will be selected as the first target ions.

[0105] In some embodiments, the second processing module 602 is further configured to:

[0106] The ions in the ion beam to be detected are used as the second target ions.

[0107] In some embodiments, the determining module 603 is further configured to:

[0108] The energy parameters of the first target ion and the energy parameters of the second target ion are compared M times, where M is a positive number less than 1;

[0109] When the energy parameters of the first target ion and the energy parameters of the second target ion are M times the first energy condition, the ion beam to be detected is determined to be the desired ion beam.

[0110] In some embodiments, the determining module 603 is further configured to: when the energy parameter of the first target ion and the energy parameter of the second target ion do not meet the first energy condition by M times, the first processing module 601 responds to the detection device being in a first working state by performing the first processing N times on the ion beam to be detected to obtain N third target ions.

[0111] In response to the detection device being in a second working state, the second processing module 602 obtains N fourth target ions based on the ion beam to be detected; where N is a positive integer greater than or equal to 1.

[0112] The determination module 603 determines whether the ion beam to be detected is the desired ion beam based on the energy parameters of each third target ion, each fourth target ion, the first target ion, and the second target ion.

[0113] In some embodiments, the detection device includes an offset subsystem and a filtration subsystem;

[0114] The cancellation subsystem is powered on during the first operating state of the detection equipment;

[0115] From the ion beam to be detected, ions with energy lower than the standard energy are filtered out by a canceling subsystem that is in an energized state.

[0116] From the ion beam to be detected, which has already had ions with energy lower than the standard energy filtered out, the filtration subsystem is used to filter out ions with energy equal to the standard energy, so as to obtain ions with energy higher than the standard energy.

[0117] In some embodiments, the detection device includes an offset subsystem and a filtration subsystem;

[0118] The cancellation subsystem is in a de-energized state during the second operating state of the detection equipment;

[0119] Ions in the ion beam to be detected travel through the cancellation subsystem in an unenergized state and through the filtration subsystem to obtain the second target ion.

[0120] It should be noted that the ion implantation energy detection device in this application embodiment solves the problem in a similar way to the aforementioned method. Therefore, the implementation process and implementation principle of the ion implantation energy detection device can be found in the description of the implementation process and implementation principle of the aforementioned method, and the repeated parts will not be repeated.

[0121] According to embodiments of this application, this application also provides an electronic device and a readable storage medium.

[0122] The electronic device includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the aforementioned method for detecting ion implantation energy.

[0123] The readable storage medium stores computer instructions that are used to cause the computer to execute the aforementioned method for detecting ion implantation energy.

[0124] Figure 7A schematic block diagram of an example electronic device 800 that can be used to implement embodiments of this application is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the application described and / or claimed herein.

[0125] like Figure 7 As shown, device 800 includes a computing unit 801, which can perform various appropriate actions and processes based on a computer program stored in read-only memory (ROM) 802 or a computer program loaded from storage unit 808 into random access memory (RAM) 803. RAM 803 may also store various programs and data required for the operation of device 800. The computing unit 801, ROM 802, and RAM 803 are interconnected via bus 804. Input / output (I / O) interface 805 is also connected to bus 804.

[0126] Multiple components in device 800 are connected to I / O interface 805, including: input unit 806, such as keyboard, mouse, etc.; output unit 807, such as various types of monitors, speakers, etc.; storage unit 808, such as disk, optical disk, etc.; and communication unit 809, such as network card, modem, wireless transceiver, etc. Communication unit 809 allows device 800 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0127] The computing unit 801 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 801 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 801 performs the various methods and processes described above, such as the method for detecting ion implantation energy. For example, in some embodiments, the method for detecting ion implantation energy can be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 808. In some embodiments, part or all of the computer program can be loaded and / or installed on device 800 via ROM 802 and / or communication unit 809. When the computer program is loaded into RAM 803 and executed by the computing unit 801, one or more steps of the method for detecting ion implantation energy described above can be performed. Alternatively, in other embodiments, the computing unit 801 can be configured to perform the method for detecting ion implantation energy by any other suitable means (e.g., by means of firmware).

[0128] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific labeled products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0129] The program code used to implement the methods of this application may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0130] In the context of this application, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0131] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0132] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0133] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.

[0134] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for detecting ion implantation energy, characterized in that, The method, applied in an ion implantation energy detection device, includes: In response to the detection device being in a first working state, the ion beam to be detected is subjected to a first processing to obtain a first target ion; In response to the detection device being in a second working state, a second target ion is obtained based on the ion beam to be detected; based on the energy parameters of the first target ion and the energy parameters of the second target ion, it is determined whether the ion beam to be detected is the desired ion beam. The detection device includes an offset subsystem and a filtration subsystem; the first processing of the ion beam to be detected to obtain the first target ion includes: The offset subsystem is powered on in the first working state of the detection equipment; From the ion beam to be detected, ions with energy lower than the standard energy are filtered out by a canceling subsystem that is in an energized state. From the ion beam to be detected, which has already had ions with energy lower than the standard energy filtered out, the filtration subsystem is used to filter out ions with energy equal to the standard energy, so as to obtain ions with energy higher than the standard energy. Ions with energies higher than the standard energy will be selected as the first target ions. The offset subsystem is in a de-energized state in the second operating state of the detection equipment; The ions in the ion beam to be detected travel through the cancellation subsystem in the unpowered state and through the filtering subsystem to obtain the second target ion; The cancellation subsystem includes a first graphite sheet, a second graphite sheet, and a power source; the first graphite sheet and the second graphite sheet generate a force when the power source is powered, and do not generate a force when the power source is not powered; the direction of the force is from the second graphite sheet to the first graphite sheet, opposite to the direction of entry of the ion beam to be detected; the power supply energy is the same as or similar to the standard energy of the ion beam to be detected. The filtration subsystem includes a first magnet and a second magnet; a magnetic field is formed between the first magnet and the second magnet; the first magnet and the second magnet are wrapped with graphite near the magnetic field; the magnetic field formed between the first magnet and the second magnet is a weak magnetic field.

2. The method according to claim 1, characterized in that, The process of obtaining the second target ion based on the ion beam to be detected includes: The ions in the ion beam to be detected are used as the second target ions.

3. The method according to any one of claims 1 to 2, characterized in that, The step of determining whether the ion beam to be detected is a desired ion beam based on the energy parameters of the first target ion and the second target ion includes: comparing the energy parameters of the first target ion and the energy parameters of the second target ion by M times, where M is a positive number less than 1; and determining that the ion beam to be detected is a desired ion beam when the energy parameters of the first target ion and the energy parameters of the second target ion by M times satisfy a first energy condition.

4. The method according to claim 3, characterized in that, Also includes: When the energy parameters of the first target ion and the second target ion are M times less than the first energy condition, In response to the detection device being in a first working state, the ion beam to be detected is subjected to N first processing steps to obtain N third target ions; In response to the detection device being in a second working state, N fourth target ions are obtained based on the ion beam to be detected; where N is a positive integer greater than or equal to 1. Based on the energy parameters of each third target ion, each fourth target ion, the energy parameters of the first target ion, and the energy parameters of the second target ion, it is determined whether the ion beam to be detected is the desired ion beam.

5. A device for detecting ion implantation energy, characterized in that, include: The first processing module is used to perform a first processing on the ion beam to be detected in response to being in a first working state, so as to obtain a first target ion; The second processing module is used to obtain the second target ion based on the ion beam to be detected in response to being in the second working state; The determination module is used to determine whether the ion beam to be detected is the desired ion beam based on the energy parameters of the first target ion and the energy parameters of the second target ion; The detection equipment includes an offset subsystem and a filtration subsystem; The first processing of the ion beam to be detected to obtain the first target ion includes: The offset subsystem is powered on in the first working state of the detection equipment; From the ion beam to be detected, ions with energy lower than the standard energy are filtered out by a canceling subsystem that is in an energized state. From the ion beam to be detected, which has already had ions with energy lower than the standard energy filtered out, the filtration subsystem is used to filter out ions with energy equal to the standard energy, so as to obtain ions with energy higher than the standard energy. Ions with energies higher than the standard energy will be selected as the first target ions. The offset subsystem is in a de-energized state in the second operating state of the detection equipment; The ions in the ion beam to be detected travel through the cancellation subsystem in the unpowered state and through the filtering subsystem to obtain the second target ion; The cancellation subsystem includes a first graphite sheet, a second graphite sheet, and a power source; the first graphite sheet and the second graphite sheet generate a force when the power source is powered, and do not generate a force when the power source is not powered; the direction of the force is from the second graphite sheet to the first graphite sheet, opposite to the direction of entry of the ion beam to be detected; the power supply energy is the same as or similar to the standard energy of the ion beam to be detected. The filtration subsystem includes a first magnet and a second magnet; a magnetic field is formed between the first magnet and the second magnet; the first magnet and the second magnet are wrapped with graphite near the magnetic field; the magnetic field formed between the first magnet and the second magnet is a weak magnetic field.

6. An electronic device, characterized in that, include: At least one processor; as well as A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-4.

7. A non-transitory computer-readable storage medium storing computer instructions, characterized in that, The computer instructions are used to cause the computer to perform the method according to any one of claims 1-4.

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