Acoustic sensor and earpiece
By driving the thin film to vibrate through the CMOS unit and piezoelectric component in the acoustic wave sensor, acoustic signals of different frequency bands are emitted, solving the problem of poor sound output of headphones, realizing directional sound propagation and noise shielding, and improving the sound quality and wearing comfort of headphones.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- VIVO MOBILE COMM CO LTD
- Filing Date
- 2023-10-30
- Publication Date
- 2026-06-19
AI Technical Summary
Existing headphones have poor sound output, with significant sound loss during transmission, resulting in poor sound quality.
An acoustic wave sensor is used to convert the audio signal from the external circuit into an electrical signal through a CMOS unit. This signal controls the piezoelectric component to drive the first and second thin films to vibrate, emitting acoustic signals in different frequency bands and achieving directional sound propagation.
It improves the clarity, brightness, and wide soundstage of the sound, allowing users to hear clearer and brighter sound through the headphones, while also blocking out noise within a certain range, providing a better headphone experience.
Smart Images

Figure CN117294986B_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of headphone technology, specifically relating to a sound wave sensor and headphones. Background Technology
[0002] With technological advancements and improved living standards, headphones have become an indispensable part of people's lives. The sound quality of headphones is a crucial factor for consumers when choosing them, and improving this sound quality has always been an important research direction. Summary of the Invention
[0003] This application aims to provide a sound wave sensor and headphones that at least solve the problem of improving the sound output of headphones.
[0004] To solve the above-mentioned technical problems, this application is implemented as follows:
[0005] In a first aspect, embodiments of this application provide an acoustic wave sensor, comprising: a housing 1; a PCB substrate 2 fixedly connected to the housing 1; pads 3 printed on a first surface of the PCB substrate 2 for electrical connection to an external circuit; a complementary metal-oxide-semiconductor (CMOS) cell 4 disposed on a second surface of the PCB substrate 2 and electrically connected to the PCB substrate 2, wherein the second surface is opposite to the first surface; a piezoelectric component 5 electrically connected to the CMOS cell 4; a first thin film 6 disposed on the piezoelectric component 5; and a second thin film 7, with its edge connected to the piezoelectric component 5, forming a first receiving cavity. The first thin film 6 is disposed within the first accommodating cavity; the ultrasonic acoustic hole 8 is disposed on the second thin film 7, directly opposite the first thin film 6; wherein, the audio signal of the external circuit is transmitted to the PCB substrate 2 via the solder pad 3, the PCB substrate 2 transmits the audio signal to the CMOS unit 4, the CMOS unit 4 amplifies the first voltage signal corresponding to the audio signal and outputs it, and controls the piezoelectric component 5 to drive the first thin film 6 and the second thin film 7 to emit a first acoustic signal and a second acoustic signal respectively through the output amplified electrical signal, the first acoustic signal and the second acoustic signal having different frequency bands.
[0006] Secondly, embodiments of this application provide an earphone, comprising: an earphone circuit; and the aforementioned acoustic wave sensor, wherein the pad 3 of the acoustic wave sensor is electrically connected to the earphone circuit.
[0007] In the embodiments of this application, the CMOS unit of the acoustic wave sensor converts the audio signal from the external circuit into an electrical signal, which in turn controls the piezoelectric component to drive the first and second thin films to vibrate, emitting first and second acoustic signals of different frequency bands respectively. This enables directional sound propagation and improves the detail, brightness, and wide sound field of the sound. Therefore, when this acoustic wave sensor is applied to headphones, it can achieve long-distance directional sound emission through the acoustic signals emitted by the sensor, making the sound heard by the user clearer and brighter, and also shielding noise within a certain range, providing the user with a better headphone experience.
[0008] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description
[0009] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:
[0010] Figure 1 This is a schematic diagram of an acoustic wave sensor according to an embodiment of this application;
[0011] Figure 2 This is a schematic diagram of another acoustic wave sensor according to an embodiment of this application;
[0012] Figure 3 This is a circuit logic diagram of the CMOS unit in the acoustic wave sensor according to an embodiment of this application;
[0013] Figure 4 This is a schematic diagram of an earphone according to an embodiment of this application.
[0014] Figure label:
[0015] 1: Outer casing; 2: PCB substrate; 3: Solder pads;
[0016] 4: Complementary Metal-Oxide-Semiconductor (CMOS) cell; 41: Oscillator circuit; 42: Voltage-to-frequency conversion circuit; 43: Pulse frequency modulation circuit; 44: Frequency-to-voltage demodulation circuit; 45: Time-to-frequency switching circuit; 46: Amplifier-driven circuit.
[0017] 5: Piezoelectric component; 51: Negative electrode; 52: Piezoelectric ceramic; 53: Positive electrode;
[0018] 6: First thin film; 7: Second thin film; 8: Ultrasonic aperture; 9: Silicon base; 10: Silicon pillar;
[0019] 401: Surface-mount acoustic wave sensor; 402: Memory foam sleeve;
[0020] 4031: Earphone front shell; 4032: Earphone middle shell; 4033: Earphone back shell. Detailed Implementation
[0021] Embodiments of the present invention will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.
[0022] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this invention, unless otherwise stated, "a plurality of" means two or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0023] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0024] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0025] The following is combined Figures 1-3 This application describes an acoustic wave sensor and headphones according to embodiments thereof.
[0026] Figure 1An exemplary embodiment of this application illustrates an acoustic wave sensor, which includes: a housing 1, a PCB substrate 2 fixedly connected to the housing 1, a pad 3, a complementary metal oxide semiconductor (CMOS) cell 4, a piezoelectric component 5, a first thin film 6, a second thin film 7, and an acoustic aperture 8.
[0027] The housing of the acoustic wave sensor provided in this application can be made of materials such as brass or iron-aluminum alloy, and can be connected to the PCB substrate by means of hot pressing or glue, which can protect the internal structure of the acoustic wave sensor. For example, it can prevent the internal components of the acoustic wave sensor from contacting rainwater and dust, and avoid the function of the acoustic wave sensor from being affected by the outside world.
[0028] In this embodiment, the pad 3 can be printed on the first surface of the PCB substrate 2 for electrical connection with an external circuit. The pad is printed on the PCB substrate, for example, by electroplating, etching, etc. The acoustic wave sensor provided in this application can be connected to an external circuit through the pad 3, so that the external circuit can control the acoustic wave sensor to emit sound in a predetermined manner.
[0029] In this embodiment, a complementary metal-oxide-semiconductor (CMOS) unit 4 is disposed on the second surface of the PCB substrate 2 and electrically connected to the PCB substrate 2, wherein the second surface is opposite to the first surface. The CMOS unit is the driving unit of the acoustic wave sensor, and can integrate circuits such as a modulated frequency stabilizer oscillator, harmonic processing, and matching amplification through etching or other methods to modulate, load, and amplify the electrical signal corresponding to the acoustic wave signal.
[0030] In this application, the piezoelectric component 5 is disposed above the CMOS cell 4 and electrically connected to the CMOS cell 4. The first thin film 6 is disposed on the piezoelectric component 5.
[0031] Optionally, the first thin film 6 may be disposed in the central region of the piezoelectric component 5.
[0032] In this embodiment, the first thin film 6 can be a silicon thin film or a silicon nitride thin film. That is, the first thin film can be etched from materials such as polycrystalline silicon or silicon nitride and bonded to the center of the piezoelectric component by die bond adhesive. The first thin film 6 has the characteristics of high instantaneous frequency response and fast frequency. Therefore, the first thin film 6 can respond to the control of the piezoelectric component 5 and emit ultrasonic signals relatively quickly.
[0033] The second film 7 is connected at its edge to the piezoelectric component 5 to form a first receiving cavity, and the first film 6 is disposed within the first receiving cavity. The second film of the acoustic wave sensor can be formed from polyethylene terephthalate (PET), polyetherimide (PEI), or thermoplastic polyurethane rubber (TPU) composite material, and is bonded to the edge of the piezoelectric component by hot pressing or adhesive, etc., and has strong tensile strength.
[0034] In this embodiment, the sound hole 8 is disposed on the second film 7, which can be directly opposite the first film 6, or the specific position of the sound hole can be adjusted according to actual needs.
[0035] In this embodiment, the audio signal from the external circuit is transmitted to the PCB substrate 2 via the pad 3. The PCB substrate 2 transmits the audio signal to the CMOS unit. The CMOS unit 4 amplifies the first voltage signal corresponding to the audio signal and outputs it. The amplified electrical signal is used to control the piezoelectric component 5 to drive the first thin film 6 and the second thin film 7 to emit the first acoustic signal and the second acoustic signal, respectively. The first acoustic signal and the second acoustic signal have different frequency bands.
[0036] Optionally, the first acoustic signal can be an ultrasonic signal, and the second acoustic signal can be a non-ultrasonic signal.
[0037] In the optional implementations described above in this application, ultrasonic signals enable directional sound propagation, enhancing sound detail, brightness, and sound field in the high and ultra-high frequency ranges of the human ear. Therefore, during operation of the acoustic sensor, the pads transmit audio signals from the external circuitry to the PCB substrate, which then transmits the audio signals to the CMOS unit. The CMOS unit processes the audio signals and controls the piezoelectric component to drive the first thin film to emit ultrasonic signals through the ultrasonic aperture via the final output electrical signal. Thus, the acoustic sensor enables directional sound propagation and allows the user to hear clearer sound.
[0038] In one alternative implementation, such as Figure 2 As shown, the acoustic wave sensor may further include a silicon base 9, disposed between the PCB substrate 2 and the CMOS unit 4, and electrically connected to the PCB substrate 2 and the CMOS unit 4. In this embodiment, the silicon base of the acoustic wave sensor can be electrically connected to the PCB substrate and the CMOS unit using conductive adhesive or silver paste, and mechanically fixed to the PCB substrate using hot pressing or adhesive, which also protects the internal structure of the acoustic wave sensor.
[0039] Optionally, such as Figure 2As shown, the acoustic wave sensor may further include: at least two silicon pillars 10 disposed between the silicon base 9 and the piezoelectric component 5, electrically connected to the silicon base 9 and the piezoelectric component 5, forming a second receiving cavity between the silicon base 9 and the piezoelectric component 5 through the silicon pillars 10, and the CMOS unit 4 located in the second receiving cavity.
[0040] The silicon pillars in the acoustic sensor can connect the CMOS unit and the piezoelectric component using conductive adhesive or silver paste, providing sufficient driving voltage. Furthermore, by placing the CMOS unit 4 within the second receiving cavity, the CMOS unit 4 can be protected, preventing damage to it.
[0041] Optionally, the piezoelectric component 5 can be a piezoelectric ceramic component or a piezoelectric crystal component. This application does not impose specific restrictions on the material of the piezoelectric component, as long as it can achieve the functions required by the piezoelectric component in this application.
[0042] Optionally, such as Figure 2 As shown, the piezoelectric component 5 of the acoustic wave sensor in this application can be a piezoelectric ceramic component, including: a negative electrode 51, a piezoelectric ceramic 52, and a positive electrode 53. The negative electrode 51 is electrically connected to the CMOS unit 4, and the positive electrode 53 is electrically connected to the first thin film 6. The piezoelectric ceramic 52 is located between the negative electrode 51 and the positive electrode 53. By providing a polarization voltage to the piezoelectric ceramic, the negative and positive electrodes enable the piezoelectric ceramic to transmit ultrasonic signals based on the inverse piezoelectric effect.
[0043] Optionally, after processing the audio signal, the CMOS unit can also control the piezoelectric component to drive the second thin film to emit a non-ultrasonic signal via the output electrical signal. This non-ultrasonic signal, in the low-to-mid frequency range of the human ear, can enhance the intensity, loudness, and clarity of sound. Therefore, using this optional acoustic sensor allows the user to hear sound with greater intensity, loudness, and clarity.
[0044] Optionally, such as Figure 3 As shown, the CMOS unit 4 may include: an oscillator circuit 41 for providing a reference ultrasonic frequency signal; a voltage-frequency (U / F) conversion circuit 42 for converting a first voltage signal corresponding to the input audio signal into a first frequency signal; a pulse frequency modulation circuit 43 for fusing the ultrasonic frequency signal and the first frequency signal to obtain a second frequency signal; a frequency-voltage (F / U) demodulation circuit 44 for converting the second frequency signal into a corresponding second voltage signal; a time-division frequency switching circuit 45 for outputting a frequency-division signal of the second voltage signal according to a time period; and an amplification and driving circuit 46 for amplifying the frequency-division signal and outputting a driving signal to the piezoelectric component 5.
[0045] Specifically, the CMOS unit serves as the core of the acoustic wave sensor modulation and driving circuit, and its circuit implementation logic is as follows: Figure 3 As shown, the oscillator circuit, after frequency calibration, provides a reference ultrasonic frequency; the audio signal transmitted from the external circuit is converted into a frequency signal proportional to it by the U / F (voltage to frequency) conversion circuit; then the reference frequency and the converted frequency signal are fused by the pulse frequency modulation circuit, converted into a corresponding voltage signal by the F / U (frequency to voltage) demodulation circuit, passed through the time-division frequency switching circuit, and finally amplified by the amplification circuit to drive the piezoelectric ceramic to control the first thin film to emit ultrasonic signals.
[0046] Similar to the above process, the oscillator circuit can undergo a series of signal processing steps, pass through a time-division frequency switching circuit, and finally use an amplification circuit to drive the piezoelectric ceramic to control the second thin film to emit non-ultrasonic signals.
[0047] According to the acoustic wave sensor of this application embodiment, the audio signal of the external circuit is converted into a corresponding electrical signal by the CMOS unit, and the electrical signal drives the piezoelectric component to drive the first film to emit an ultrasonic signal and the second film to emit a non-ultrasonic signal, thereby realizing the directional propagation of sound. This solves the problems of large sound loss and poor presentation effect in the transmission process of the prior art, and enables users to hear clearer and brighter sound.
[0048] According to an embodiment of this application, an earphone using the aforementioned acoustic wave sensor is also provided. The earphone includes an earphone circuit and the aforementioned acoustic wave sensor, wherein the pad 3 of the acoustic wave sensor is electrically connected to the earphone circuit.
[0049] In this embodiment, the audio signal of the headphone circuit is transmitted to the internal structure of the acoustic wave sensor through the solder pads of the acoustic wave sensor, thereby emitting ultrasonic and non-ultrasonic signals.
[0050] Optionally, such as Figure 4 As shown, there are multiple acoustic wave sensors 401. In specific applications, different numbers of acoustic wave sensors can be selected according to the stacking method and sound performance to meet the needs of different users for headphones.
[0051] Optionally, the earphone may further include a memory foam sleeve 402 disposed on the sound output port of the earphone, wherein the acoustic sensor can be embedded inside the memory foam sleeve. In this optional implementation, the acoustic sensor can be fixed to the earphone by embedding it inside the memory foam sleeve, thereby automatically adapting to the size of the human ear and fitting comfortably without needing to be inserted into the ear canal.
[0052] In this embodiment, a novel earphone structure design is adopted, eliminating the need for holes or sound outlets in the earphone's sound-producing area and the need for silicone ear tips inserted into the ear canal. The earphone structure design is as follows: Figure 3 As shown, the earphone structure includes: a surface-mount acoustic sensor 401, a memory foam sleeve 402, a front shell 4031, a middle shell 4032, and a rear shell 4033. The surface-mount acoustic sensor 401 is the acoustic sensor described in the above-mentioned embodiment, which can be embedded inside the memory foam sleeve 402 to emit sound. The number of sensors 401 can be one or more, and can be designed according to stacking methods and sound performance requirements. A multi-sensor array can be used to achieve directional sound emission. The memory foam sleeve 402 can automatically adapt to the size of the human ear and does not need to extend into the ear canal. Other parts, such as the front shell 4031, middle shell 4032, and rear shell 4033, can be stacked with different components and functions according to design requirements, or a one-piece molded shell can be used as the earphone outer shell.
[0053] According to the embodiments of this application, the headphones, by using the aforementioned acoustic wave sensor, can emit ultrasonic signals, enabling users to obtain sound over long distances through the headphones. This solves the problems of significant sound loss and poor sound quality in the transmission of existing headphones, allowing users to hear clearer and brighter sounds through the headphones. Furthermore, it eliminates the need for opening holes or sound outlets in the headphone's sound-emitting area, and also eliminates the need for silicone ear tips to be inserted into the ear canal. The curvature of the headphone's front cavity is optimized, thereby improving the comfort of wearing the headphones. It is also completely waterproof, indirectly improving the quality and lifespan of the headphones.
[0054] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0055] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims
1. An acoustic wave sensor, characterized by, include: shell; The PCB substrate is fixedly connected to the outer casing; The pads are printed on the first surface of the PCB substrate and are used for electrical connection with external circuits. A CMOS cell is disposed on the second surface of the PCB substrate and electrically connected to the PCB substrate, wherein the second surface is opposite to the first surface; A piezoelectric component is disposed above the CMOS cell and electrically connected to the CMOS cell; A first thin film is disposed on the piezoelectric component; The second film has its edge connected to the piezoelectric component to form a first receiving cavity, and the first film is disposed in the first receiving cavity; The acoustic aperture is disposed on the second membrane, directly opposite the first membrane; The audio signal from the external circuit is transmitted to the CMOS unit. The CMOS unit amplifies the first voltage signal corresponding to the audio signal and outputs it. The amplified electrical signal is then used to control the piezoelectric component to drive the first thin film and the second thin film to emit a first acoustic signal and a second acoustic signal, respectively. The first acoustic signal and the second acoustic signal have different frequency bands.
2. The acoustic wave sensor of claim 1, wherein, The first acoustic signal is an ultrasonic signal, and the second acoustic signal is a non-ultrasonic signal.
3. The acoustic wave sensor of claim 1, wherein, Also includes: A silicon substrate is disposed between the PCB substrate and the CMOS cell, and is electrically connected to both the PCB substrate and the CMOS cell.
4. The acoustic wave sensor of claim 3, wherein, Also includes: At least two silicon pillars are disposed between the silicon base and the piezoelectric component, and are electrically connected to both the silicon base and the piezoelectric component. The silicon pillars form a second receiving cavity between the silicon base and the piezoelectric component, and the CMOS cell is located in the second receiving cavity.
5. The acoustic wave sensor according to any one of claims 1 to 4, characterized in that The piezoelectric component is a piezoelectric ceramic component, comprising: a negative electrode, a piezoelectric ceramic and a positive electrode. The negative electrode is electrically connected to the CMOS cell, the positive electrode is electrically connected to the first thin film, and the piezoelectric ceramic is located between the negative electrode and the positive electrode.
6. The acoustic wave sensor according to any one of claims 1 to 4, characterized in that The first thin film is disposed in the central region of the piezoelectric component.
7. The acoustic wave sensor according to any one of claims 1 to 4, characterized in that The CMOS unit includes: Oscillator circuit, used to provide a reference ultrasonic frequency signal; A voltage-to-frequency conversion circuit is used to convert the first voltage signal corresponding to the input audio signal into a first frequency signal. A pulse frequency modulation circuit is used to fuse the ultrasonic frequency signal and the first frequency signal to obtain a second frequency signal; A frequency-voltage demodulation circuit is used to convert the second frequency signal into a corresponding second voltage signal; The time-division frequency switching circuit is used to output a frequency-division signal from the second voltage signal according to the time period; An amplification drive circuit is used to amplify the frequency division signal and output a drive signal to the piezoelectric component.
8. An earphone, characterized by include: Headphone circuitry; The acoustic wave sensor according to any one of claims 1 to 7, wherein the pads of the acoustic wave sensor are electrically connected to the headphone circuit.
9. The earphone of claim 8, wherein, The number of acoustic sensors is multiple.
10. The earphone according to claim 8 or 9, characterized in that, Also includes: A memory foam sleeve is disposed on the sound output port of the earphone, wherein the sound wave sensor is embedded inside the memory foam sleeve.
Citation Information
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