Physical vapor deposition apparatus and method

Abstract

The application relates to a physical vapor deposition device and method. The physical vapor deposition device comprises a machine body and an electron generating device. The machine body is provided with a reaction chamber. The electron generating device is arranged on the machine body, and the electron generating device can generate and emit electrons to the inside of the reaction chamber. By designing to add an electron generating device, the free electron concentration in the reaction chamber can be increased by the electrons generated by the electron generating device, a pre-ignition effect for generating plasma is achieved, even if the initial stage of ignition is under the condition of low power and low gas flow, ignition failure will not occur, the ignition efficiency is ensured, and the film deposition thickness in the unstable power stage can be reduced by controlling the power size and the gas pressure, and the film deposition quality can be improved.

Claims

1. A physical vapor deposition apparatus characterized by comprising: The physical vapor deposition apparatus includes: The body, wherein the body is provided with a reaction chamber; The system comprises an electrode plate, a target material, an electrostatic chuck, and a vacuum pump. The electrode plate and the target material are disposed on the top of the machine body, with the target material connected to and located below the electrode plate. The electrostatic chuck is disposed within the reaction chamber and opposite to the target material, and is used to mount semiconductor workpieces. The vacuum pump is disposed on the machine body and is connected to the reaction chamber, used to extract gas from inside the reaction chamber. An electron generating device is disposed on the body and communicates with the reaction chamber. The electron generating device generates electrons and emits them into the reaction chamber during the initial ignition stage to increase the concentration of free electrons in the reaction chamber. The electron generating device includes a shell, a cathode, and a heating element. The shell is mounted on the body and has a first pair of interfaces. The body has a second pair of interfaces, and the shell communicates with the reaction chamber through the first and second pairs of interfaces. The cathode and the heating element are disposed inside the shell. The cathode includes a first metal cylinder with a first opening at one end and a first closed end at the other end. The heating element passes through the first opening into the first metal cylinder, with the first closed end facing the first pair of interfaces. The heating element is used to connect with the configured... The device includes a power supply and an active emission material on the outer wall of the first closed end. The active emission material is an electron emission layer material formed by barium strontium calcium titanate in solid solution form, with barium as the main component and strontium and calcium in the form of strontium and calcium, or a barium strontium calcium aluminum scandium salt or barium calcium aluminum salt active emission material. The electron generating device also includes a gate. The gate includes a second metal cylinder, one end of which has a second opening, and the other end of which is a second closed end. The first closed end passes through the second opening into the second metal cylinder, and the second closed end faces the first interface. The second closed end has a through hole. The electron generating device also includes an accelerating electrode disposed inside the outer shell. The accelerating electrode is disposed between the gate and the first interface, and the accelerating electrode has an electron flow channel, which is respectively positioned opposite the through hole and the first interface. A controller; the controller is electrically connected to the electron generating device, and the controller is used to control the operation of the electron generating device in the initial stage of ignition and to control the electron generating device to stop operating in the substrate surface deposition stage.

2. The physical vapor deposition device of claim 1, wherein, The heating element is a filament and / or a heating rod.

3. The physical vapor deposition apparatus according to claim 1, characterized in that, The housing is provided with a mounting base for installing the power supply; and / or, the housing is provided with a power interface, a power hole, and a power connection cable.

4. The physical vapor deposition apparatus according to claim 1, characterized in that, The physical vapor deposition apparatus further includes seals disposed at the first pair of interfaces and the second pair of interfaces, and the housing is connected to the body through the seals.

5. The physical vapor deposition apparatus according to claim 1, characterized in that, The electron generating device may be one or more.

6. The physical vapor deposition apparatus according to claim 5, characterized in that, Multiple electron generating devices are spaced apart on the body.

7. A physical vapor deposition method, applied to the physical vapor deposition apparatus as described in any one of claims 1-6, characterized in that, Includes the following steps: When the physical vapor deposition apparatus is in the initial stage of ignition, electrons generated by the electron generation device are emitted into the reaction chamber of the physical vapor deposition apparatus to increase the concentration of free electrons in the reaction chamber. The physical vapor deposition apparatus is controlled to ignite under low power and / or low gas flow conditions, wherein the low power range is 60kW~120kW and the low gas flow range is 50sccm~150sccm.

8. The physical vapor deposition method according to claim 7, characterized in that, The physical vapor deposition method further includes the following step: when the initial ignition stage of the physical vapor deposition apparatus ends, the electron generation device is controlled to stop working.

9. The physical vapor deposition method according to claim 7, characterized in that, The current intensity of the electron generating device during operation is 2mA-10mA.

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