一种克服带隙基准源中晶体管漏电的方法及芯片
By connecting a dummy transistor or dummy diode to the collector of the bandgap reference source, the problem of transistor leakage imbalance is solved, and the stability and accuracy of the circuit output are improved, making it suitable for different bandgap reference circuits.
CN117311436BActive Publication Date: 2026-07-17SG MICRO CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SG MICRO CORP
- Filing Date
- 2022-06-20
- Publication Date
- 2026-07-17
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Figure CN117311436B_ABST
Abstract
本发明涉及一种克服带隙基准源中晶体管漏电的方法及芯片，其特征在于：方法为所述带隙基准源中的晶体管增加dummy三极管或dummy二极管，从而降低温度变化对所述晶体管的基极发射极电压差造成的影响。本发明结构简单、不影响现有电路，只从工艺上对漏电进行抵消，通过两种不同方式实现了芯片面积与性能之间的平衡，使得该方法能够根据需求适用于各种不同的带隙基准电路。
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