Resistor structure and method of manufacturing the same

Abstract

The present application relates to the technical field of electronic components, and particularly relates to a resistor structure and a manufacturing method thereof, which comprises: a substrate; a metal layer arranged on the substrate, the metal layer being provided with a groove, and the groove being arranged in an electrode area of the metal layer; a first insulating layer and an electrode layer being arranged on the metal layer, the first insulating layer covering a non-electrode area of the metal layer, and the electrode layer being arranged on a top surface of the electrode area of the metal layer and in the groove. In the present application, the groove is arranged in the electrode area of the metal layer, and the electrode layer is arranged on the top surface of the electrode area of the metal layer and in the groove, so that the thickness of the resistor component is reduced without changing the volume of the electrode of the resistor component.

Description

Technical Field

[0001] This invention relates to the field of electronic component technology, and in particular to a resistor structure and its fabrication method. Background Technology

[0002] Currently, the development trend of electronic components is towards thinner and lighter designs. One common type of precision resistor consists of a resistance alloy and electrodes. The electrodes are typically made of copper and plated with nickel and tin to facilitate subsequent soldering. Based on existing component designs, by keeping the electrode volume constant, it is possible to reduce the component's thickness while maintaining the same characteristics as the original component. This will facilitate the application of electronic components in more thinner and lighter devices.

[0003] The above content is only used to help understand the technical solution of the present invention and does not represent an admission that the above content is prior art. Summary of the Invention

[0004] The main objective of this invention is to provide a resistor structure and its manufacturing method, aiming to solve the technical problem of how to reduce the thickness of the resistor element without changing the volume of the resistor element electrode in the prior art.

[0005] To achieve the above objectives, the present invention proposes a resistor structure, the resistor structure comprising:

[0006] Base;

[0007] A metal layer disposed on the substrate, the metal layer having a groove disposed within the electrode region of the metal layer;

[0008] The metal layer is provided with a first insulating layer and an electrode layer. The first insulating layer covers the non-electrode area of ​​the metal layer, and the electrode layer is disposed on the upper surface of the electrode area of ​​the metal layer and in the groove.

[0009] Optionally, the electrode region includes a first electrode region and a second electrode region respectively disposed at both ends of the upper surface of the metal layer;

[0010] Both the first electrode region and the second electrode region are provided with a predetermined number of grooves.

[0011] Optionally, the preset number of grooves are evenly distributed in the first electrode region and the second electrode region at preset intervals.

[0012] Optionally, the depth of the groove is equal to or less than the thickness of the metal layer.

[0013] Optionally, the resistor structure further includes a contact layer disposed on the substrate, and the metal layer is disposed on the contact layer.

[0014] Optionally, a second insulating layer is further provided on the first insulating layer.

[0015] Optionally, the first insulating layer and the second insulating layer are composed of organic materials, inorganic materials, or a combination of organic and inorganic materials.

[0016] Optionally, the sum of the thicknesses of the metal layer, the first insulating layer, and the second insulating layer is equal to or less than the thickness of the electrode layer.

[0017] To achieve the above objectives, the present invention also proposes a method for fabricating a resistor structure, the method comprising:

[0018] Obtain the substrate;

[0019] A metal layer is disposed on the substrate, and grooves are etched into the electrode region of the metal layer.

[0020] A first insulating layer is disposed on the non-electrode region and the non-groove region of the electrode region of the metal layer;

[0021] After depositing the first electrode layer in the groove of the electrode area of ​​the metal layer, the first insulating layer on the non-groove area of ​​the electrode area is removed, and the second electrode layer is deposited on the entire surface of the electrode area.

[0022] Optionally, after the step of depositing the first electrode layer in the groove of the electrode region of the metal layer, removing the first insulating layer on the non-groove area of ​​the electrode region, and depositing the second electrode layer on the entire surface of the electrode region, the method further includes:

[0023] The current resistance value of the resistive structure is tested by plating an electrode layer;

[0024] When the current resistance value does not meet the preset resistance value condition, the metal layer is adjusted.

[0025] A second insulating layer is applied to the adjusted metal layer.

[0026] This invention provides a resistor structure and its fabrication method. The resistor structure includes: a substrate; a metal layer disposed on the substrate, the metal layer having grooves disposed within an electrode region of the metal layer; a first insulating layer and an electrode layer disposed on the metal layer, the first insulating layer covering a non-electrode region of the metal layer, and the electrode layer disposed on the upper surface of the electrode region of the metal layer and within the grooves. In this invention, by providing grooves within the electrode region of the metal layer and disposing the electrode layer on the upper surface of the electrode region of the metal layer and within the grooves, the thickness of the resistor element is reduced without changing the volume of the resistor element electrodes. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of the first electrode layer in the first embodiment of the resistor structure proposed in this invention;

[0029] Figure 2 This is a top view of the first electrode layer in the first embodiment of the resistor structure proposed in this invention;

[0030] Figure 3 This is a schematic diagram of the first embodiment of the resistor structure proposed in this invention;

[0031] Figure 4 This is a top view of the first embodiment of the resistor structure proposed in this invention;

[0032] Figure 5 This is a schematic diagram of the third embodiment of the resistor structure proposed in this invention;

[0033] Figure 6 This is a top view of the third embodiment of the resistor structure proposed in this invention;

[0034] Figure 7 This is a flowchart illustrating the first embodiment of the method for fabricating the resistor structure of the present invention;

[0035] Figure 8 This is a flowchart illustrating the second embodiment of the method for fabricating the resistor structure of the present invention.

[0036] Explanation of icon numbers:

[0037] 1 base 2 Contact layer 3 Metal layer 4 First insulating layer 51 First electrode layer 52 Second electrode layer 6 Second insulating layer

[0038] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0039] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0040] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0041] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0042] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, the user should consider such a combination of technical solutions to be non-existent and not within the scope of protection claimed by this invention.

[0043] Reference Figures 1 to 4 , Figure 1 This is a schematic diagram of the structure of the first electrode layer 51 in the first embodiment of the resistor structure proposed in this invention; Figure 2 This is a top view of the first electrode layer 51 in the first embodiment of the resistor structure proposed in this invention; Figure 3 This is a schematic diagram of the first embodiment of the resistor structure proposed in this invention; Figure 4 This is a top view of the first embodiment of the resistor structure proposed in this invention. Based on... Figures 1 to 4 The first embodiment of the resistor structure of the present invention is presented.

[0044] In this embodiment, the resistor structure includes: a substrate 1;

[0045] A metal layer 3 is disposed on the substrate 1, and the metal layer 3 has a groove disposed in the electrode region of the metal layer 3;

[0046] The metal layer 3 is provided with a first insulating layer 4 and an electrode layer. The first insulating layer 4 covers the non-electrode area of ​​the metal layer 3, and the electrode layer is disposed on the upper surface of the electrode area of ​​the metal layer 3 and in the groove.

[0047] It should be understood that substrate 1 is the bottom layer that supports the entire resistor structure. Substrate 1 can be composed of organic materials, inorganic materials, or a mixture of organic and inorganic materials, such as ceramic substrates, glass fiber substrates, etc.

[0048] The resistive structure also includes a contact layer 2 disposed on the substrate 1, and the metal layer 3 disposed on the contact layer 2. The contact layer 2 is used to fix the metal layer 3 to the substrate 1. For example, when it is necessary to place the metal on a glass plate, a certain amount of adhesive can be used, which serves as the contact layer 2 between the metal and the glass plate. The contact layer 2 can be composed of epoxy or acrylic materials, which can improve the adhesion between the metal layer 3 and the substrate 1. It should be understood that the contact layer 2 structure can be omitted, but an additional lamination and heating process is required.

[0049] It is understandable that metal layer 3 is a conductive structural layer, and the specific resistance value of the resistive structure is directly related to the size and constituent materials of metal layer 3. The materials constituting metal layer 3 have a certain resistivity, thus making the resistive structure resistive. Metal layer 3 can be composed of pure metals or metal alloys, such as pure metals like copper, silver, and gold, or alloys including materials like copper, silver, manganese, and gold.

[0050] In this embodiment, the metal layer 3 includes an electrode region and a non-electrode region. The electrode region is used to connect electrode leads to connect the resistor structure to other components. The electrode region of the metal layer 3 has grooves, which effectively utilize space by placing the electrode layer within these grooves. This design allows the electrode portion to be closer to the surface of the metal layer 3, increasing the contact area and enabling a more compact layout as needed, thus achieving a smaller resistor structure design. The electrode layer can be composed of pure metal or alloy materials, and the constituent materials of the electrode layer can be the same as those of the metal layer 3.

[0051] It should be understood that the electrode layer includes a first electrode layer 51 and a second electrode layer 52. The first electrode layer 51 is disposed within a groove, and the second electrode layer 52 is disposed on the upper surface of the first electrode layer 51 and the electrode area of ​​the metal layer 3. During the specific configuration process, multiple grooves can be defined in the electrode area of ​​the metal layer 3 using methods such as laser or etching. A first insulating layer 4 is then applied to the upper surface of the remaining portion of the metal layer 3 without grooves. The placement of the first insulating layer 4 protects the metal layer 3, prevents poor contact, and provides a smooth surface for subsequent plating processes, ensuring the reliability and performance of the resistor structure. Then, the first electrode layer 51 is deposited within the groove using plating. Finally, the first insulating layer 4 on the electrode area of ​​the metal layer 3 is removed, and the entire electrode area of ​​the metal layer 3 is then plating treated, i.e., the second electrode layer 52 is deposited on the electrode area of ​​the metal layer 3. By removing the first insulating layer 4, the electrode area of ​​the metal layer 3 is exposed. Plating the entire electrode area forms the second electrode layer 52, thereby providing good electrical connection and conductivity.

[0052] It should be noted that, in order to prevent oxidation, passivation, and other effects from oxidizing gases, nitriding gases, etc., in the external environment from altering the structure of the metal layer 3 and causing changes in the resistance value of the resistive structure, a first insulating layer 4 is also required on the upper surface of the non-electrode region of the metal layer 3. The first insulating layer 4 effectively isolates the metal layer 3 from the external environment, thereby protecting it from environmental influences. The first insulating layer 4 can be composed of organic materials, inorganic materials, or a mixture of organic and inorganic materials. The organic material can be solder resist ink, and the inorganic material can be silicon dioxide, gallium nitride, aluminum nitride, etc. The mixed material can be a stack of organic and inorganic materials, such as a layer of silicon dioxide on top of solder resist ink, or a layer of solder resist ink on top of silicon dioxide.

[0053] This embodiment provides a resistor structure comprising: a substrate 1; a metal layer 3 disposed on the substrate 1, the metal layer 3 having a groove disposed within an electrode region of the metal layer 3; a first insulating layer 4 and an electrode layer disposed on the metal layer 3, the first insulating layer 4 covering the non-electrode region of the metal layer 3, and the electrode layer disposed on the upper surface of the electrode region of the metal layer 3 and within the groove. In this embodiment, by providing a groove within the electrode region of the metal layer 3 and disposing of the electrode layer on the upper surface of the electrode region of the metal layer 3 and within the groove, the thickness of the resistor element is reduced without changing the volume of the resistor element electrode.

[0054] Furthermore, referring to Figure 1 and Figure 2Based on the first embodiment of the resistor structure described above, a second embodiment of the resistor structure of the present invention is proposed.

[0055] In this embodiment, the electrode region includes a first electrode region and a second electrode region respectively disposed at both ends of the upper surface of the metal layer 3;

[0056] Both the first electrode region and the second electrode region are provided with a predetermined number of grooves.

[0057] It should be understood that during the resistor structure setup, two electrode leads are required to connect the two ends of the resistor to external devices. Therefore, when plating the electrode layers, two plating metal layers are needed; that is, the electrode layer comprises two plating metal layers. The plating metal layers are a first electrode layer 51 and a second electrode layer 52, which are formed within the electrode region of metal layer 3 by plating. This plating metal layer can be connected to other components via wires. Similarly, metal layer 3 should also include two electrode regions, namely a first electrode region and a second electrode region, each of which can be plated with a plating metal layer.

[0058] By placing the electrode areas at both ends of the metal layer 3, the electrode areas can be effectively isolated, providing each electrode area with an independent working area. This avoids mutual interference between electrode areas and ensures the stability of the working effect and performance of each electrode area. Both the first and second electrode areas have a preset number of grooves. These grooves can be used to support electrical connection materials (such as solder, wires, etc.), forming a reliable connection between them and the electrode areas and improving reliability.

[0059] It should be understood that the number and volume of the grooves can be designed according to specific needs to meet the volume requirements of the resistive element and provide good contact performance. For example, taking the 0402 standard resistor as an example, its dimensions are 1mm (1000um) long, 0.6mm (600um) wide, 0.2mm (200um) thick, 0.3mm (300um) wide electrode area, and 0.1mm (100um) high electrode. Based on these dimensions, the original electrode volume is 600um * 300um * 100um = 18,000,000um³. If the electrode thickness is to be reduced from 100um to 50um, and the volume to 9,000,000um³, a design with nine groove units can be used, with each groove having a volume of 1,000,000um³. Each groove could then be 50um long, 100um wide, and 200um high, thus maintaining the total electrode volume while reducing the overall resistor thickness.

[0060] Furthermore, in this embodiment, the preset number of grooves are evenly distributed in the first electrode region and the second electrode region at preset intervals.

[0061] It should be noted that a predetermined number of grooves are evenly distributed in the first electrode region and the second electrode region at predetermined intervals. This means that these grooves are evenly arranged within the electrode regions, and the distance between them is the same.

[0062] It should be understood that the uniform distribution of grooves provides uniform support and connection points, ensuring that electrical connection materials (such as solder, wires, etc.) are evenly distributed within the electrode area. This helps achieve reliable electrical connections and reduces resistance variations in resistive devices. Secondly, by uniformly distributing grooves within the electrode area, a uniform distribution of current can be achieved within the electrode area. This helps avoid instability and performance loss in resistive devices during operation caused by uneven current distribution.

[0063] Furthermore, in this embodiment, the depth of the groove is equal to or less than the thickness of the metal layer 3.

[0064] It should be noted that if the depth of the groove is equal to the thickness of metal layer 3, this helps maintain the flatness and consistency of the entire electrode area, thereby improving the manufacturing quality and performance stability of the resistor device. Secondly, a groove depth equal to the thickness of metal layer 3 ensures sufficient contact area and reliable connection between the electrical connection material and the electrode area. This helps provide good electrical connection quality and reduces potential problems during soldering or connection. If the groove depth is less than the thickness of metal layer 3, for example, if the groove depth is 1 / 2 the thickness of metal layer 3, taking a 0402 standard resistor as an example, its dimensions are 1mm (1000um) long, 0.6mm (600um) wide, 0.2mm (200um) thick, with an electrode area width of 0.3mm (300um) and an electrode height of 0.1mm (100um). Based on these dimensions, the volume of the original electrode is calculated to be 600um * 300um * 100um = 18,000,000um³. To reduce the electrode thickness from 100µm to 75µm and decrease the volume by 4,500,000µm³, a design using nine recessed units, each with a volume of 500,000µm³, could be employed. Each recess could be 50µm long, 100µm wide, and 100µm high, thus maintaining the total electrode volume while reducing the overall resistance thickness. Furthermore, since the bottom of the recess is a metal layer, the electrode plating time can be effectively reduced.

[0065] Reference Figure 5 and Figure 6 , Figure 5 This is a schematic diagram of the third embodiment of the resistor structure proposed in this invention; Figure 6 This is a top view of the third embodiment of the resistor structure proposed in this invention; the third embodiment of the resistor structure of this invention is proposed based on the above-described second embodiment.

[0066] In this embodiment, a second insulating layer 6 is also provided on the first insulating layer 4.

[0067] It should be understood that after the resistor structure is set up, the specific resistance value of the resistor structure still needs to be tested. During the testing process, adjustments to the metal layer 3 in the resistor structure may be required. For example, if there is a certain error during the etching process of the metal layer 3, resulting in a difference between the resistance value of the resistor structure and the actual required resistance value, then the metal layer 3 needs to be adjusted to ensure that the resistance value of the resistor structure meets the requirements.

[0068] It should be noted that when adjusting the resistance value, the structure of the metal layer 3 can usually be fine-tuned directly. However, since the metal layer 3 has a first insulating layer 4, adjusting the metal layer 3 will damage the structure of the first insulating layer 4. After the resistance value of the resistor structure is adjusted, in order to prevent the metal layer 3 from being partially exposed to the external environment, a second insulating layer 6 can be set on the first insulating layer 4, thereby effectively preventing the metal layer 3 from being partially exposed to the external environment.

[0069] It is understandable that the structure and composition of the second insulating layer 6 can be the same as or different from that of the first insulating layer 4. In actual installation, both the first insulating layer 4 and the second insulating layer 6 can be composed of solder resist ink.

[0070] In this embodiment, in order to further reduce the thickness of the resistive structure, the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6 can be set to be the same as the thickness of the electrode layer.

[0071] It is understandable that the electrode layer, metal layer 3, first insulating layer 4, and second insulating layer 6 are all necessary structures in the fabrication of the resistor structure. The electrode layer is disposed within the electrode region of the metal layer 3, while the first insulating layer 4 and second insulating layer 6 are sequentially disposed within the non-electrode region of the metal layer 3. Setting the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6 to be the same as the thickness of the electrode layer can improve other performance characteristics of the resistor structure while reducing its overall thickness. For example, if the thickness of the electrode layer is greater than the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6, the thickness of either the first insulating layer 4 or the second insulating layer 6 can be increased to further enhance the protection of the metal layer 3 without changing the overall thickness of the resistor structure. Conversely, if the thickness of the electrode layer is less than the sum of the thicknesses of the metal layer 3, the first insulating layer 4, and the second insulating layer 6, the thickness of the electrode layer can be appropriately adjusted to increase the stability of the resistor structure during measurement.

[0072] In addition, to achieve the above objectives, refer to Figure 7 , Figure 7 This is a schematic flowchart of the first embodiment of the resistor structure fabrication method of the present invention. The present invention also provides a method for fabricating a resistor structure based on the described resistor structure, the method comprising:

[0073] Step S10: Obtain the substrate.

[0074] Understandably, the substrate is the bottom layer that supports the entire resistive structure. This substrate can be composed of organic materials, inorganic materials, or a mixture of organic and inorganic materials, such as ceramic substrates, glass fiber substrates, etc.

[0075] It should be understood that after the substrate is set, a contact layer can also be set on the substrate.

[0076] It should be noted that the contact layer can be used to fix the metal layer to the substrate. For example, when it is necessary to set the metal on a glass plate, a certain amount of adhesive can be used, which serves as the contact layer between the metal and the glass plate. The contact layer can be composed of epoxy or acrylic materials, which can improve the adhesion between the metal layer and the substrate.

[0077] In practice, considering the adhesion between the substrate and the metal layer, a connecting layer can be set on the substrate after the substrate is set.

[0078] Step S20: A metal layer is formed on the substrate, and grooves are etched in the electrode area of ​​the metal layer.

[0079] It should be understood that before setting the metal layer, it is necessary to determine whether a contact layer is set on the substrate. If no contact layer is set, the metal layer can be set directly on the substrate; if a contact layer is set, the metal layer needs to be set on the contact layer.

[0080] It should be noted that the metal layer is a conductive structural layer, and the specific resistance value of the resistive structure is directly related to the size of the metal layer and its constituent materials. The materials that make up the metal layer have a certain resistivity, which makes the resistive structure exhibit resistivity. The metal layer can be composed of pure metals or metal alloys, such as pure metals like copper and silver, or alloys including materials like copper, silver, manganese, and tin.

[0081] In this embodiment, the metal layer includes an electrode region and a non-electrode region. The electrode region is used to connect electrode leads to link the resistor structure with other components. The electrode region of the metal layer has grooves, which effectively utilize space by placing the electrode layer within these grooves. This design allows the electrode portion to be closer to the surface of the metal layer, increasing the contact area and enabling a more compact layout as needed, thus achieving a smaller resistor structure design. The electrode layer can be composed of pure metal or alloy materials, and the constituent materials of the electrode layer can be the same as those of the metal layer.

[0082] Step S30: A first insulating layer is provided on the non-electrode region and the non-groove region of the electrode region of the metal layer.

[0083] Understandably, to prevent oxidation, passivation, and other effects from external environmental processes such as oxidizing or nitriding gases from altering the structure of the metal layer and causing changes in its resistance, a first insulating layer is required on the non-electrode areas and non-groove areas of the electrode areas of the metal layer. This first insulating layer effectively isolates the metal layer from the external environment, protecting it from environmental influences. This first insulating layer can be composed of organic materials, inorganic materials, or a mixture of both. The organic material can be solder resist ink, and the inorganic material can be silicon dioxide, gallium nitride, aluminum nitride, etc. The mixed material can be a stack of organic and inorganic materials, such as a layer of silicon dioxide on top of solder resist ink, or a layer of solder resist ink on top of silicon dioxide.

[0084] In the specific setup process, a certain area can be selected on the upper surface of the metal layer as the electrode area, and then a certain thickness of solder resist ink can be coated on the non-electrode area outside the electrode area as the first insulating layer.

[0085] Step S40: After depositing the first electrode layer in the groove of the electrode area of ​​the metal layer, remove the first insulating layer on the non-groove area of ​​the electrode area, and deposit the second electrode layer on the entire surface of the electrode area.

[0086] It should be understood that the electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is disposed within a groove, and the second electrode layer is disposed on the upper surface of the electrode area of ​​the first electrode layer and the metal layer. In the specific configuration process, multiple grooves can be defined in the electrode area of ​​the metal layer using methods such as laser or etching. A first insulating layer is then applied to the upper surface of the remaining portion of the metal layer where no grooves are located. The placement of the first insulating layer protects the metal layer, prevents poor contact, and provides a smooth surface for subsequent plating processes, ensuring the reliability and performance of the resistor structure. The first electrode layer is then deposited within the groove using plating. Finally, the first insulating layer on the electrode area of ​​the metal layer is removed, and plating is performed on the entire electrode area of ​​the metal layer. This process exposes the electrode area of ​​the metal layer by removing the first insulating layer. Plating the entire electrode area forms the second electrode layer, providing good electrical connection and conductivity.

[0087] This embodiment provides a resistor structure and its fabrication method. The method includes: a substrate; a metal layer disposed on the substrate, the metal layer having a groove, the groove being disposed within an electrode region of the metal layer; a first insulating layer and an electrode layer disposed on the metal layer, the first insulating layer covering a non-electrode region of the metal layer, and the electrode layer being disposed on the upper surface of the electrode region of the metal layer and within the groove. In this embodiment, by providing a groove within the electrode region of the metal layer and disposing the electrode layer on the upper surface of the electrode region of the metal layer and within the groove, the thickness of the resistor element is reduced without changing the volume of the resistor element electrode.

[0088] Reference Figure 8 , Figure 8 This is a schematic flowchart of the second embodiment of the resistor structure fabrication method of the present invention. Based on the first embodiment of the resistor structure fabrication method described above, a second embodiment of the resistor structure fabrication method of the present invention is proposed.

[0089] In this embodiment, the method further includes the following after step S50:

[0090] Step S50: Test the current resistance value of the resistive structure by plating an electrode layer.

[0091] Step S60: When the current resistance value does not meet the preset resistance value condition, the metal layer is adjusted.

[0092] Step S70: Apply a second insulating layer to the adjusted metal layer.

[0093] It should be understood that after the resistor structure is set up, its specific resistance value needs to be tested. This testing process may involve adjusting the metal layer within the resistor structure. For example, if there are errors during the etching process of the metal layer, causing a difference between the resistance value of the resistor structure and the actual required resistance value, then the metal layer needs to be adjusted to ensure the resistance value meets the requirements.

[0094] It should be noted that when adjusting the resistance value, the structure of the metal layer can usually be fine-tuned directly. However, because a first insulating layer is set on the metal layer, adjusting the metal layer will damage the structure of the first insulating layer. After the resistance value of the resistor structure is adjusted, in order to prevent the metal layer from being partially exposed to the external environment, a second insulating layer can be set on the first insulating layer, thereby effectively preventing the metal layer from being partially exposed to the external environment.

[0095] It is understandable that the structure and composition of the second insulating layer can be the same as or different from that of the first insulating layer. In actual installation, both the first and second insulating layers can be composed of organic materials such as solder resist ink, or inorganic materials such as silicon dioxide.

[0096] During the specific setup process, the resistance value of the resistor structure can be monitored in real time during the mechanical adjustment. Adjustment stops when the resistance value meets the preset condition; otherwise, it continues until the resistance value meets the preset condition. Adjustment can be performed using electro-jet repair or mechanical methods, such as grinding the metal layer. Once the resistance value meets the preset condition, a second insulating layer is installed in the non-electrode area of ​​the adjusted resistor structure.

[0097] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

Claims

1. A resistor structure, characterized in that, The resistor structure includes: Base; A metal layer disposed on the substrate, the metal layer having a groove disposed within the electrode region of the metal layer; The metal layer is provided with a first insulating layer and an electrode layer. The first insulating layer covers the non-electrode area of ​​the metal layer, and the electrode layer is disposed on the upper surface of the electrode area of ​​the metal layer and in the groove. The electrode region includes a first electrode region and a second electrode region respectively disposed at both ends of the upper surface of the metal layer; Both the first electrode region and the second electrode region are provided with a predetermined number of the grooves; The preset number of grooves are evenly distributed in the first electrode region and the second electrode region at preset intervals; The depth of the groove is equal to or less than the thickness of the metal layer.

2. The resistor structure as described in claim 1, characterized in that, The resistor structure further includes a contact layer disposed on the substrate, and the metal layer is disposed on the contact layer.

3. The resistor structure as described in claim 1, characterized in that, A second insulating layer is also provided on the first insulating layer.

4. The resistor structure as described in claim 3, characterized in that, The first insulating layer and the second insulating layer are composed of organic materials, inorganic materials, or a combination of organic and inorganic materials.

5. The resistor structure as described in claim 4, characterized in that, The sum of the thicknesses of the metal layer, the first insulating layer, and the second insulating layer is equal to or less than the thickness of the electrode layer.

6. A method for fabricating a resistor structure based on the resistor structure described in any one of claims 1-5, characterized in that, The method for fabricating the resistor structure includes: Obtain the substrate; A metal layer is disposed on the substrate, and grooves are etched into the electrode region of the metal layer. A first insulating layer is disposed on the non-electrode region and the non-groove region of the electrode region of the metal layer; After depositing the first electrode layer in the groove of the electrode area of ​​the metal layer, the first insulating layer on the non-groove area of ​​the electrode area is removed, and the second electrode layer is deposited on the entire surface of the electrode area.

7. The method for fabricating a resistor structure as described in claim 6, characterized in that, After the step of depositing the first electrode layer in the groove of the electrode region of the metal layer, removing the first insulating layer on the non-groove area of ​​the electrode region, and depositing the second electrode layer on the entire surface of the electrode region, the method further includes: The current resistance value of the resistive structure is tested by plating an electrode layer; When the current resistance value does not meet the preset resistance value condition, the metal layer is adjusted. A second insulating layer is applied to the adjusted metal layer.

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