Methods for detecting the solidification state using sound waves or electromagnetic waves

Abstract

This invention provides a method for detecting the die-bonding state using acoustic waves or electromagnetic waves, comprising: a local block of a die detaches from the die-bonding device and contacts a substrate to form a bonding wave; the bonding wave diffuses from the local block of the die towards other blocks of the die and has a diffusion trend, causing the die to gradually detach from the die-bonding device and be fixed to the substrate; the acoustic wave or electromagnetic wave propagates along the surface of the die; the degree of change in volume, amplitude, or frequency of the acoustic wave at different locations is sensed, or the degree of change in amplitude or frequency of the electromagnetic wave at different locations is sensed, and sensing information is obtained; the degree of change in the distance between the die and the die-bonding device is determined based on the sensing information; the diffusion trend of the bonding wave is determined based on the degree of change in the distance between the die and the die-bonding device; and the degree of change in the diffusion trend of the bonding wave is determined based on the diffusion trend of the bonding wave to determine whether the die is tightly bonded to the substrate.

Description

Technical Field

[0001] This invention relates to a crystal bonding method, and more particularly to a method for detecting the crystal bonding state using acoustic waves or electromagnetic waves. Background Technology

[0002] Integrated circuits are fabricated on semiconductor wafers through mass production and multiple processes. The wafers are then further divided into multiple dies. In other words, a die is a small, unpackaged integrated circuit component made of semiconductor material. The divided dies are neatly attached to a carrier device, which is then transported by a carrier frame. Finally, a die bonding device sequentially transfers the dies to a substrate for subsequent processing.

[0003] Furthermore, during the process of transferring the die to the substrate, local blocks of the die detach from the die bonding device and contact the substrate to form a bond wave. The bond wave diffuses from the local blocks of the die towards other blocks of the die, causing the die to gradually detach from the die bonding device and be fixed to the substrate.

[0004] However, air bubbles may be trapped between the bottom surface of the die and the top surface of the substrate, forming a void, or particles may adhere to the bottom surface of the die, causing the bottom surface of the die to not be tightly bonded to the top surface of the substrate. Once the die is not tightly bonded to the substrate, subsequent processing procedures such as picking or identification of the die will be easily affected by air bubbles or particles, reducing the yield of the finished products. Manufacturers usually pick out the dies that are not tightly bonded to the substrate.

[0005] However, the substrate has a large number of chips, and the chips are very small, making it difficult to accurately identify which chips are tightly attached to the substrate and which are not. Therefore, manufacturers have virtually no way to pick out the chips that are not tightly attached to the substrate. Summary of the Invention

[0006] The main objective of this invention is to provide a method for detecting the bonding state of crystals using sound waves or electromagnetic waves, which can accurately identify whether the crystals are tightly bonded to the substrate.

[0007] To achieve the aforementioned objectives, the present invention provides a method for detecting the die-bonding state using acoustic waves or electromagnetic waves, comprising the following steps: a local block of a die detaches from a die-bonding device and contacts a substrate to form a bonding wave; the bonding wave diffuses from the local block of the die towards other blocks of the die and has a diffusion trend, causing the die to gradually detach from the die-bonding device and be fixed to the substrate; an acoustic wave or an electromagnetic wave propagates along the surface of the die; the degree of change in volume, amplitude, or frequency of the acoustic wave at different locations is sensed, or the degree of change in amplitude or frequency of the electromagnetic wave at different locations is sensed and multiple sensing information is obtained; the degree of change in the distance between the die and the die-bonding device is determined based on the multiple sensing information; the diffusion trend of the bonding wave is determined based on the degree of change in the distance between the die and the die-bonding device; and the degree of change in the diffusion trend of the bonding wave is determined based on the diffusion trend of the bonding wave.

[0008] In some embodiments, the step of forming the bonding wave further includes: the die bonding device generating an airflow by a positive pressure to blow a local block of the die, causing the local block of the die to detach from the die bonding device and flex and deform to contact the substrate.

[0009] In some embodiments, the step of the sound wave or electromagnetic wave propagating along the surface of the grain further includes: the sound wave or electromagnetic wave propagating along the surface of the grain in a gap between the die bonding device and the grain, and then the sound wave or electromagnetic wave entering multiple channels of the die bonding device; and wherein the step of sensing the degree of change in volume, amplitude or frequency of the sound wave at different locations, or sensing the degree of change in amplitude or frequency of the electromagnetic wave at different locations, further includes: multiple sensors respectively sensing the degree of change in volume, amplitude or frequency of the sound wave passing through the multiple channels, or multiple sensors respectively sensing the degree of change in amplitude or frequency of the electromagnetic wave passing through the multiple channels, and obtaining multiple sensing information.

[0010] In some embodiments, the step of propagating sound waves or electromagnetic waves along the surface of the grain further includes: the airflow generated by the positive pressure generates a wind-cutting sound wave after contacting the surface of the grain.

[0011] In some embodiments, the step of propagating sound waves or electromagnetic waves along the surface of the grain further includes: a sound wave generating device is disposed outside the die bonding device and the grain and generates a sound wave.

[0012] In some embodiments, the step of the sound wave or electromagnetic wave propagating along the surface of the grain further includes: an electromagnetic wave generating device disposed outside the die bonding device and the grain and generating an electromagnetic wave.

[0013] In some embodiments, the step of determining the degree of change in the distance between the die and the die bonding device further includes: a processing unit receiving the plurality of sensing information and determining the degree of change in the volume, amplitude, or frequency of the sound wave at different locations based on the plurality of sensing information, or determining the degree of change in the amplitude or frequency of the electromagnetic wave at different locations; the processing unit further determines the degree of change in the distance between the die and the die bonding device based on the degree of change in the volume, amplitude, or frequency of the sound wave at different locations, or based on the degree of change in the amplitude or frequency of the electromagnetic wave at different locations; wherein, the step of determining the diffusion trend of the bonding wave further includes: the processing unit determining the diffusion trend of the bonding wave based on the degree of change in the distance between the die and the die bonding device; and wherein, the step of determining whether the die is tightly bonded to the substrate further includes: the processing unit determining whether the die is tightly bonded to the substrate based on the diffusion trend of the bonding wave.

[0014] The advantage of this invention is that the method of this invention can use sound waves or electromagnetic waves to detect the die bonding state and accurately identify which grains are tightly bonded to the substrate and which grains are not tightly bonded to the substrate. Attached Figure Description

[0015] Figure 1A and Figure 1B This is a flowchart of the method of the present invention;

[0016] Figure 2A A schematic diagram of the die bonding device and sensor is shown;

[0017] Figure 2B A bottom view of the die bonding device and sensor is shown;

[0018] Figure 3 A schematic diagram showing the connection relationship between the vent, vacuum device, and gas supply device;

[0019] Figure 4 A schematic diagram showing the connection relationship between the sensor and the processing unit;

[0020] Figure 5 and Figure 6 This is a schematic diagram of steps S100 to S800 of the first embodiment of the method of the present invention;

[0021] Figure 7 A schematic diagram showing how the raised portion of the grain affects the change in the volume of the sound wave and the diffusion trend of the bonded wave;

[0022] Figure 8 A schematic diagram showing the diffusion trend of bonding waves when there are no voids or particles between the grain and the substrate;

[0023] Figure 9 A schematic diagram showing the diffusion trend of bonding waves when there are voids or particles between the grain and the substrate;

[0024] Figure 10A This is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, showing the difference in the degree of change of the amplitude of the sound wave;

[0025] Figure 10B A schematic diagram showing how the raised portion of the grain affects the amplitude variation of the sound wave and the diffusion trend of the bonded wave;

[0026] Figure 11A This is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, showing the difference in the degree of frequency change of the sound wave;

[0027] Figure 11B A schematic diagram showing how the raised portion of the grain affects the frequency variation of the sound wave and the diffusion trend of the bonded wave;

[0028] Figure 12A This is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, showing the difference in the degree of amplitude change of the electromagnetic wave;

[0029] Figure 12B A schematic diagram showing how the raised portion of the grain affects the amplitude variation of electromagnetic waves and the diffusion trend of the bonded wave;

[0030] Figure 13A This is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, showing the difference in the degree of frequency change of the electromagnetic wave;

[0031] Figure 13B This diagram illustrates how the raised portion of the grain affects the frequency variation of electromagnetic waves and the diffusion trend of the bonded wave.

[0032] Explanation of reference numerals in the attached figures:

[0033] 10: Die bonding device;

[0034] 101-104: Corner;

[0035] 11–14: Stomata;

[0036] 15, 16: Side;

[0037] 17: Passage;

[0038] 20: Grain size;

[0039] 21: The raised portion;

[0040] 30: Vacuum device;

[0041] 31: Negative pressure;

[0042] 40: Gas supply device;

[0043] 41: Positive pressure;

[0044] 50: substrate;

[0045] 60: The diffusion trend of the bonding wave;

[0046] 61: Sound waves;

[0047] 62: Electromagnetic waves;

[0048] 70: Gap;

[0049] 71: Hollow;

[0050] 80: Sensor;

[0051] 81: Sensing information;

[0052] 90: Processing unit;

[0053] 100: Sound wave generating device;

[0054] 110: Electromagnetic wave generating device;

[0055] D1~D3, D1A~D3A: direction;

[0056] S100~S800: Steps;

[0057] V1~V5: The volume of the sound waves of wind cutting sound;

[0058] SA1~SA5: The degree of change in the amplitude of the sound wave;

[0059] SF1~SF5: The degree of frequency variation of sound waves;

[0060] EA1~EA5: The degree of amplitude variation of electromagnetic waves;

[0061] EF1~EF5: The degree of frequency change of electromagnetic waves. Detailed Implementation

[0062] The following description, in conjunction with the accompanying drawings and component symbols, provides a more detailed account of the embodiments of the present invention, enabling those skilled in the art to implement them after studying this specification.

[0063] Please see Figures 1A to 9 , Figure 1A and Figure 1B This is a flowchart of the method of the present invention. Figure 2A A schematic diagram of the die bonding device 10 and the sensor 80 is shown. Figure 2B A top view of the die bonding device 10 and the sensor 80 is shown. Figure 3A schematic diagram showing the connection relationship between vents 11 to 14, vacuum device 30, and gas supply device 40 is provided. Figure 4 A schematic diagram showing the connection relationship between sensor 80 and processing unit 90 is provided. Figure 5 and Figure 6 This is a schematic diagram of steps S100 to S800 of the first embodiment of the method of the present invention. Figure 7 This diagram illustrates how the raised portion 21 of grain 20 affects the volume change of sound wave 61 and the diffusion trend 60 of the bonded wave. Figure 8 This diagram illustrates the diffusion trend 60 of the bonding wave when there are no voids or particles between the grain 20 and the substrate 50. Figure 9 A schematic diagram showing the diffusion trend 60 of the bonding wave when there are voids 71 ​​or particles between the grain 20 and the substrate 50 is displayed. This invention provides a method for detecting the die-bonding state using acoustic waves or electromagnetic waves, comprising the following steps:

[0064] Step S100, as follows Figure 1A and Figure 5 As shown, a crystal bonding device 10 uses a negative pressure 31 to generate an adsorption force to adsorb a crystal grain 20. More specifically, as Figure 2A and Figure 2B As shown, the die bonding device 10 has four pores 11 to pores 14, which are distributed at the four corners 101 to 104 of the die bonding device 10; Figure 3 As shown, the plurality of vents 11 to 14 are connected to a vacuum device 30 and a gas supply device 40; as Figure 2B , Figure 3 and Figure 5 As shown, the vacuum device 30 evacuates air from the plurality of vents 11 to vents 14 to generate a negative pressure 31. The die-bonding device 10 uses the negative pressure 31 to generate an adsorption force to adsorb the four corners 101 to 104 of the crystal grain 20, so that the crystal grain 20 is tightly attached to the periphery of the bottom surface of the die-bonding device 10. Because the periphery of the crystal grain 20 can be tightly attached to the periphery of the bottom surface of the die-bonding device 10, there are no gaps between the periphery of the crystal grain 20 and the periphery of the bottom surface of the die-bonding device 10, preventing external air from entering and affecting the adsorption effect of the negative pressure 31 on adsorbing the crystal grain 20.

[0065] Step S200, as follows Figure 1A , Figure 6 and Figure 7 As shown, the die bonding device 10 generates an airflow through a positive pressure 41 to blow away a local area of ​​the die 20, causing the local area of ​​the die 20 to detach from the die bonding device 10 and flex and deform to contact a substrate 50. After the local area of ​​the die 20 contacts the substrate 50, a bond wave is formed. Step S200 of the first embodiment can be further divided into the following two implementation methods.

[0066] In the first embodiment, a localized area of ​​the die 20 is a corner of the die 20. The die bonding device 10 generates an airflow through positive pressure 41 to blow on the corner of the die 20, causing the corner of the die 20 to detach from the die bonding device 10 and bend to contact the substrate 50. After the corner of the die 20 contacts the substrate 50, a bonding wave is formed. More specifically, the vacuum device 30 stops evacuating air from the vents 11 at the corner 101 of the die bonding device 10, and the vents 11 stop adsorbing the corner of the die 20 by the suction force generated by negative pressure 31. At the same time, the gas supply device 40 starts blowing air into the vents 11 at the corner 101 of the die bonding device 10 to generate positive pressure 41, and the vents 11 start generating an airflow through positive pressure 41 to blow on the corner of the die 20. The vacuum device 30 continues to evacuate air from the vents 12 to 14 at the other corners 102 to 104 of the die bonding device 10, ensuring that the vents 12 to 14 at the other corners 102 to 104 of the die bonding device 10 maintain the adsorption force generated by the negative pressure 31 to hold the other corners of the die 20. In this way, the die 20 is not only kept fixed in the die bonding device 10, but also ensures that only its corners are flexed and most prominent, allowing the corners of the die 20 to contact the substrate 50 in a point-contact manner. Because the corners of the die 20 contact the substrate 50 in a point-contact manner, bonding forces are generated at the corners of the die 20 and in their vicinity, and these bonding forces further form adhesion waves. More specifically, the vacuum device 30 sequentially stops evacuating the vents 12 to 14 at the other corners 102 to 104 of the die bonding device 10, and the vents 12 to 14 sequentially stop providing negative pressure 31 along the diagonal direction. The gas supply device 40 sequentially starts blowing air into the vents 12 to 14 at the other corners 102 to 104 of the die bonding device 10, and the vents 12 to 14 sequentially start providing positive pressure 41 along the diagonal direction to generate airflow to blow on the other corners of the die 20, so that the other corners of the die 20 are blown by airflow along the diagonal direction to generate a pressure difference fluctuation. The pressure difference fluctuation can further enable the corners of the die 20 to form a bonding wave after contacting the substrate 50.

[0067] In the second embodiment, a localized area of ​​the die 20 is one side of the die 20. The die bonding device 10 generates an airflow through positive pressure 41 to blow on the side of the die 20, causing the side of the die 20 to detach from the die bonding device 10 and flex and deform to contact the substrate 50. After the side of the die 20 contacts the substrate 50, a bonding wave is formed. More specifically, the vacuum device 30 stops evacuating air from the vents 11 and 12 at the two corners 101 and 102 of the side 15 of the die bonding device 10. The vents 11 and 12 stop adsorbing the two corners of the side 10 of the die 20 by negative pressure 31. At the same time, the gas supply device 40 starts blowing air into the vents 11 and 12 at the two corners 101 and 102 of the side 15 of the die bonding device 10 to generate positive pressure 41. The vents 11 and 12 start to generate an airflow through positive pressure 41 to blow on the two corners of the side 10 of the die 20. The vacuum device 30 continues to evacuate air from the vents 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, so that the vents 13 and 14 maintain the adsorption force generated by the negative pressure 31 to hold the two corners of the other side of the die 20. Therefore, the die 20 can not only remain fixed in the die bonding device 10, but also ensure that only its side is flexed and deformed and most prominent, so that the side of the die 20 can contact the substrate 50 in a line contact manner. Because the side of the die 20 contacts the substrate 50 in a line contact manner, bonding forces are generated on the side of the die 20 and its vicinity, and these bonding forces will further form a bonding wave. More specifically, the vacuum device 30 stops evacuating air from the vents 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, and the vents 13 and 14 stop providing negative pressure 31. The gas supply device 40 sequentially starts blowing air into the vents 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, and the vents 13 and 14 begin to provide positive pressure 41 to generate airflow to blow on the other side of the die 20, so that the die 20 is sequentially blown by the airflow from one side to the other side to generate a pressure difference fluctuation. The pressure difference fluctuation can further enable the side of the die 20 to form a bonding wave after contacting the substrate 50.

[0068] Step S300, as follows Figure 1A , Figure 6 and Figure 7 As shown, the bonding wave diffuses from a local block of the die 20 to other blocks of the die 20 and has a diffusion trend 60, causing the die 20 to gradually detach from the die bonding device 10 and the die 20 to gradually be fixed on the substrate 50. Step S300 of the first embodiment can be further divided into the following two implementation methods.

[0069] In the first embodiment, the pressure difference fluctuation guides the bonding wave to diffuse along a diagonal line of the grain 20. In the second embodiment, the pressure difference fluctuation guides the bonding wave to diffuse from one side of the grain 20 to the other.

[0070] In some embodiments, the number and distribution of the plurality of pores can be varied. For example, there may be six pores, with four pores located at the four corners of the die bonding device 10 and the other two pores located on opposite sides of the die bonding device 10. Alternatively, there may be nine pores, with four pores located at the four corners of the die bonding device 10 and the other four pores located on the four sides of the die bonding device 10, respectively located between the corners. Another example is that there may be only two pores, located at opposite corners or opposite sides of the die bonding device 10. Yet another example is that the die bonding device 10 may have only one pore, located at the axis of the die bonding device 10. Regardless of the variation in the number and distribution of the pores, steps S200 and S300 in these embodiments are essentially quite similar, both capable of forming bonding waves and diffuse bonding waves. The above examples are merely illustrative of the diversity in the number and distribution of pores and are not intended to limit the scope of the invention.

[0071] Step S400, as follows Figure 1A , Figure 6 and Figure 7 As shown, a sound wave 61 propagates along the surface of grain 20. Specifically, as... Figure 2A and Figure 2B As shown, the die bonding device 10 has multiple channels 17, which are evenly distributed throughout the die bonding device 10; as Figure 6 and Figure 7 As shown, the airflow generated by the positive pressure 41 generates a wind-cutting sound wave 61 after contacting the surface of the grain 20. The sound wave 61 propagates along the surface of the grain 20 in a gap 70 between the die bonding device 10 and the grain 20, and then the sound wave 61 enters the plurality of channels 17 of the die bonding device 10.

[0072] Step S500, as follows Figure 1A , Figure 4 , Figure 6 and Figure 7 As shown, the volume change of sound waves 61 at different locations is sensed and multiple sensing information 81 is obtained. Specifically, as... Figure 2A and Figure 2B As shown, multiple sensors 80 are respectively disposed at the openings of the multiple channels 17; since the sound wave 61 of wind shearing is an audible sound wave, the sensor 80 is a microphone capable of receiving audible sound waves. Figure 6As shown, when there are no voids or particles between the grain 20 and the substrate 50, the gap 70 gradually increases along the diffusion trend 60 of the bonding wave. The larger the gap 70, the greater the change in the volume of the wind shearing sound wave 61. Therefore, the change in the volume of the wind shearing sound wave 61 through different channels 17 is V1>V2>V3>V4>V5. Figure 7 As shown, when the grain 20 and the substrate 50 together enclose a bubble to form a void 71, or when some particles (not shown) adhere to the bottom surface of the grain 20, the grain 20 will bulge upwards. The bulging part 21 of the grain 20 blocks or approaches one of the channels 17, so that the sound wave 61 cannot enter one of the channels 17, resulting in a change in volume. Therefore, the degree of volume change of the sound wave 61 passing through different channels 17 is V1>V3>V4>V5 and V2=0. Figure 4 As shown, the multiple sensors 80 respectively sense the volume change of the sound waves 61 passing through the multiple channels 17 and obtain multiple sensing information 81.

[0073] Step S600, as follows Figure 1A , Figure 4 , Figure 6 and Figure 7 As shown, the degree of change in the distance between the die 20 and the die bonding device 10 is determined based on the multiple sensing information 81. More specifically, the multiple sensors 80 are electrically connected to a processing unit 90. Figure 4 and Figure 6 As shown, when there are no voids or particles between the die 20 and the substrate 50, the processing unit 90 receives the plurality of sensing information 81 and determines the degree of volume change of the sound waves 61 of the wind shearing sound passing through different channels 17 as V1>V2>V3>V4>V5 based on the plurality of sensing information 81. The processing unit 90 further determines the degree of change in the distance between the die 20 and the die bonding device 10 based on the degree of volume change of the sound waves 61 of the wind shearing sound passing through different channels 17 as V1>V2>V3>V4>V5. Figure 4 and Figure 7 As shown, when there are voids 71 ​​or particles between the die 20 and the substrate 50, the processing unit 90 receives the plurality of sensing information 81 and determines the degree of change in the volume of the sound wave 61 passing through different channels 17 based on the plurality of sensing information 81, which is V1>V3>V4>V5 and V2=0, and determines the degree of change in the distance between the die 20 and the die bonding device 10.

[0074] Step S700, as follows Figure 1A , Figure 4 , Figure 6 and Figure 7 As shown, the processing unit 90 determines the diffusion trend 60 of the bonding wave based on the degree of change in the distance between the grain 20 and the die bonding device 10.

[0075] Step S800, as follows Figure 1B , Figure 4 and Figures 6 to 9 As shown, the processing unit 90 determines whether the die 20 is tightly bonded to the substrate 50 based on the diffusion trend 60 of the bonding wave. Figure 8 As shown, when there are no voids or particles between the grain 20 and the substrate 50, the diffusion trend 60 of the bonding wave generally extends along the diagonal direction D1 of the grain 20 or from one side of the grain 20 to the other in directions D2 and D3, thus determining that the grain 20 and the substrate 50 are tightly bonded. Figure 9 As shown, when there are voids 71 ​​or particles between the grain 20 and the substrate 50, the diffusion trend 60 of the bonding wave generally extends along the diagonal of the grain 20 in the direction D1A or from one side of the grain 20 to the other in the direction D2A or direction D3A, bypassing the raised portion 21, thereby determining that the grain 20 is not tightly bonded to the substrate 50.

[0076] Figure 10A This is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, showing the difference in the degree of amplitude change of the sound wave 61. Figure 10B This diagram illustrates how the raised portion 21 of grain 20 affects the amplitude variation of acoustic wave 61 and the diffusion trend 60 of the bonded wave. Figure 11A This is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, showing the difference in the degree of frequency change of the sound wave 61. Figure 11B A schematic diagram showing the influence of the raised portion 21 of grain 20 on the frequency variation of acoustic wave 61 and the diffusion trend 60 of the bonded wave is displayed. Figures 10A to 11B As shown, structurally, the difference between the second embodiment and the first embodiment lies in that: a sound wave generating device 100 is disposed outside the die-bonding device 10 and the die 20 and generates a sound wave 61. Generally, sound waves 61 can be classified according to frequency range, from low frequency to high frequency into infrasound, audible sound waves, ultrasound, and megasound. The sound wave generating device 100 can be configured as an infrasound generating device, an audible sound wave generating device, an ultrasound generating device, and a megasound generating device according to the frequency range of the generated sound wave 61. The sensor 80 can be configured as an infrasound sensor, an audible sound wave sensor, an ultrasound sensor, and a megasound sensor according to the frequency range of the received sound wave 61. Different types of sound wave generating devices 100 can generate different amplitudes and frequency ranges of sound waves 61 (for example, an ultrasound generating device can generate the amplitude and frequency range of ultrasound, and so on). Different types of sensors 80 can receive different amplitudes and frequency ranges of sound waves 61 (for example, an ultrasound sensor can receive the amplitude and frequency range of ultrasound, and so on).

[0077] like Figures 10A to 11BAs shown in the figure, in terms of the method, the difference between the second embodiment and the first embodiment lies in: step S500, sensing the amplitude or frequency variation degree of acoustic waves 61 at different positions and obtaining a plurality of pieces of sensing information 81. As Figure 10A As shown in the figure, when there are no voids or particles between the die 20 and the substrate 50, since the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave, the larger the gap 70 is, the greater the amplitude variation degree of the acoustic wave 61 is. Therefore, the amplitude variation degrees of the acoustic waves 61 passing through different channels 17 are SA1>SA2>SA3>SA4>SA5. As Figure 10B As shown in the figure, when there is a void 71 or particles between the die 20 and the substrate 50, the die 20 will bulge upward, and the bulging portion 21 of the die 20 blocks or approaches one of the channels 17, so that the acoustic wave 61 cannot enter one of the channels 17, resulting in a change in amplitude. Therefore, the amplitude variation degrees of the acoustic waves 61 passing through different channels 17 are SA1>SA3>SA4>SA5 and SA2=0. As Figure 11A As shown in the figure, when there are no voids or particles between the die 20 and the substrate 50, since the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave, the larger the gap 70 is, the smaller the frequency variation degree of the acoustic wave 61 is. Therefore, the frequency variation degrees of the acoustic waves 61 passing through different channels 17 are SF1<SF2<SF3<SF4<SF5. As Figure 11B As shown in the figure, when there is a void 71 or particles between the die 20 and the substrate 50, the die 20 will bulge upward, and the bulging portion 21 of the die 20 blocks or approaches one of the channels 17, so that the acoustic wave 61 cannot enter one of the channels 17, resulting in a change in frequency. Therefore, the frequency variation degrees of the acoustic waves 61 passing through different channels 17 are SF1<SF3<SF4<SF5 and SF2=0.

[0078] Figure 12A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in amplitude variation degree of electromagnetic waves 62, Figure 12B which is a schematic diagram showing that the bulging portion 21 of the die 20 affects the amplitude variation degree of the electromagnetic wave 62 and the diffusion trend 60 of the bonding wave, Figure 13A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in frequency variation degree of electromagnetic waves 62, Figure 13B which is a schematic diagram showing that the bulging portion 21 of the die 20 affects the frequency variation degree of the electromagnetic wave 62 and the diffusion trend 60 of the bonding wave. As Figures 12A to 13BAs shown in the structure, the difference between the third embodiment and the second embodiment lies in that: an electromagnetic wave generating device 110 is used to replace the sound wave generating device 100, the electromagnetic wave generating device 110 generates an electromagnetic wave 62, and the electromagnetic wave 62 replaces the sound wave 61. Generally speaking, the electromagnetic wave 62 can be classified according to frequency ranges, and is divided into radio waves, terahertz radiation, microwaves, infrared rays, visible light, ultraviolet rays, X-rays and gamma rays from low frequency to high frequency. The electromagnetic wave generating device 110 can be configured as a radio wave generating device, a terahertz radiation generating device, a microwave generating device, an infrared generating device, a visible light generating device, an ultraviolet generating device, an X-ray generating device or a gamma ray generating device according to the frequency range of the electromagnetic wave 62 generated thereby. The sensor 80 can be configured as a radio wave sensor, a terahertz radiation sensor, a microwave sensor, an infrared sensor, a visible light sensor, an ultraviolet sensor, an X-ray sensor or a gamma ray sensor according to the frequency range of the received electromagnetic wave 62. Different types of electromagnetic wave generating devices 110 can generate different amplitude and frequency ranges of electromagnetic waves 62 (for example, a visible light generating device can generate the amplitude and frequency range of visible light, and so on), and different types of sensors 80 can receive the amplitude and frequency range of the corresponding electromagnetic wave 62 (for example, the visible light sensor 80 can receive the amplitude and frequency range of visible light, and so on).

[0079] As Figures 12A to 13B shown in terms of method, the difference between the third embodiment and the second embodiment lies in: step S500, sensing the amplitude or frequency variation degree of the electromagnetic wave 62 at different positions and obtaining a plurality of pieces of sensing information 81. As Figure 12A shown, when there is no void or particle between the die 20 and the substrate 50, since the gap 70 gradually becomes larger along the diffusion trend 60 of the bonding wave, the larger the gap 70 is, the larger the amplitude variation degree of the electromagnetic wave 62 is. Therefore, the amplitude variation degrees of the electromagnetic wave 62 passing through different channels 17 are EA1>EA2>EA3>EA4>EA5. As Figure 12B shown, when there is a void 71 or a particle between the die 20 and the substrate 50, the die 20 bulges upward, and the bulged portion 21 of the die 20 blocks or approaches one of the channels 17, so that the electromagnetic wave 62 cannot enter the one channel 17, resulting in a change in amplitude. Therefore, the amplitude variation degrees of the electromagnetic wave 62 passing through different channels 17 are EA1>EA3>EA4>EA5 and EA2=0. As Figure 13A shown, when there is no void or particle between the die 20 and the substrate 50, since the gap 70 gradually becomes larger along the diffusion trend 60 of the bonding wave, the larger the gap 70 is, the smaller the frequency variation degree of the electromagnetic wave 62 is. Therefore, the frequency variation degrees of the electromagnetic wave 62 passing through different channels 17 are EF1<EF2<EF3<EF4<EF5. As Figure 13BAs shown in the figure, when there is a void 71 or particles between the die 20 and the substrate 50, the die 20 will bulge upward, and the bulged portion 21 of the die 20 blocks or approaches one of the channels 17, so that the electromagnetic wave 62 cannot enter the one channel 17, resulting in a frequency change. Therefore, the frequency variation degrees of the electromagnetic waves 62 passing through different channels 17 are EF1<EF3<EF4<EF5 and EF2=0.

[0080] In summary, the method of the present invention can use acoustic waves 61 or electromagnetic waves 62 to detect the die bonding state, and accurately identify which dies 20 are closely attached to the substrate 50 and which dies 20 are not closely attached to the substrate 50. The industry can perform subsequent processing procedures on those dies 20 closely attached to the substrate 50, and pick out those dies 20 not closely attached to the substrate 50.

[0081] The above description is only used to explain the preferred embodiments of the present invention, and is not intended to limit the present invention in any form. Therefore, any modification or change made to the present invention under the same inventive spirit shall still be included in the scope of protection intended by the present invention.

Claims

1. A method for detecting the solidification state using sound waves or electromagnetic waves, characterized in that, Includes the following steps: A localized block of a grain detaches from a die bonding device and contacts a substrate to form a bonding wave; The bonding wave diffuses from a local block of the grain toward other blocks of the grain and has a diffusion trend, causing the grain to gradually detach from the die bonding device and be fixed to the substrate. A sound wave or an electromagnetic wave propagates along the surface of the grain; The volume, amplitude, or frequency of the sound wave at different locations is sensed, or the amplitude or frequency of the electromagnetic wave at different locations is sensed, and multiple sensing information is obtained. The degree of change in the distance between the grain and the die-bonding device is determined based on the multiple sensing information. The diffusion trend of the bonding wave is determined based on the degree of change in the distance between the grain and the die-bonding device; and Whether the grain is tightly bonded to the substrate is determined based on the diffusion trend of the bonding wave.

2. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 1, characterized in that, The step of forming the bonding wave further includes: the die bonding device generates an airflow by a positive pressure to blow a local block of the grain, causing the local block of the grain to detach from the die bonding device and flex and deform to contact the substrate.

3. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 2, characterized in that, The step of the sound wave or the electromagnetic wave propagating along the surface of the grain further includes: the sound wave or the electromagnetic wave propagating along the surface of the grain in a gap between the die bonding device and the grain, and then the sound wave or the electromagnetic wave entering multiple channels of the die bonding device; and wherein the step of sensing the degree of change in volume, amplitude or frequency of the sound wave at different locations, or sensing the degree of change in amplitude or frequency of the electromagnetic wave at different locations, further includes: multiple sensors respectively sensing the degree of change in volume, amplitude or frequency of the sound wave passing through the multiple channels, or multiple sensors respectively sensing the degree of change in amplitude or frequency of the electromagnetic wave passing through the multiple channels, and obtaining multiple sensing information.

4. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 3, characterized in that, The step of the sound wave or the electromagnetic wave propagating along the surface of the grain further includes: the airflow generated by the positive pressure generates a wind-cutting sound wave after contacting the surface of the grain.

5. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 3, characterized in that, The step of the sound wave or the electromagnetic wave propagating along the surface of the grain further includes: a sound wave generating device being disposed outside the die bonding device and the grain and generating a sound wave.

6. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 3, characterized in that, The step of the sound wave or the electromagnetic wave propagating along the surface of the grain further includes: an electromagnetic wave generating device disposed outside the die bonding device and the grain and generating an electromagnetic wave.

7. The method for detecting the solidification state using acoustic waves or electromagnetic waves according to claim 1, characterized in that, The step of determining the degree of change in the distance between the die and the die bonding device further includes: a processing unit receiving the plurality of sensing information and determining the degree of change in the volume, amplitude, or frequency of the sound wave at different locations, or determining the degree of change in the amplitude or frequency of the electromagnetic wave at different locations, the processing unit further determining the degree of change in the distance between the die and the die bonding device based on the degree of change in the volume, amplitude, or frequency of the sound wave at different locations, or based on the degree of change in the amplitude or frequency of the electromagnetic wave at different locations; wherein, the step of determining the diffusion trend of the bonding wave further includes: the processing unit determining the diffusion trend of the bonding wave based on the degree of change in the distance between the die and the die bonding device; and wherein, the step of determining whether the die is tightly bonded to the substrate further includes: the processing unit determining whether the die is tightly bonded to the substrate based on the diffusion trend of the bonding wave.

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