一种抑制并联器件阈值分散性增加的匹配方法
By measuring and screening the parameter drift of parallel silicon carbide MOSFET devices, and using a graded matching method to select devices of the same grade for parallel connection, the failure problem caused by the increased threshold dispersion of parallel silicon carbide MOSFET devices is solved, thereby improving the system reliability and current sharing characteristics.
CN117316799BActive Publication Date: 2026-07-17CHONGQING UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHONGQING UNIV
- Filing Date
- 2023-10-19
- Publication Date
- 2026-07-17
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Figure CN117316799B_ABST
Abstract
本发明涉及一种抑制并联器件阈值分散性增加的匹配方法，属于半导体器件技术领域包括：分别测量器件施加短期栅极应力前后在常温和高温的参数，以及短期栅极应力导致的参数漂移量；将测量的短期栅极应力后常温和 / 或高温的参数作为筛选变量对不满足要求的器件进行筛除；对短期栅极应力导致的常温和 / 或高温下的参数漂移量，以等步长的方式对满足要求的器件进行分档，选择同档的器件进行并联。本发明缓解了并联器件在使用过程中因阈值分散性增加导致器件间的分流不均问题，提高了系统的可靠性，只需测量参数的初始值和短期应力后的参数值以及参数漂移量，随后即可进行匹配，操作步骤简单可实现性强，且对器件几乎没有额外副作用。
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