Control method and system, wafer post-processing device, medium or program product

Abstract

The application discloses a control method and system, a wafer post-processing device, a medium or a program product. The wafer post-processing device comprises a cleaning component for cleaning a wafer, and the control method of the wafer post-processing device comprises the following steps: determining a deformation parameter of the wafer; determining a control distance of the cleaning component according to a preset motion scheme of the cleaning component and the deformation parameter; and controlling the motion of the cleaning component according to the control distance and the preset motion scheme, so that the motion of the cleaning component compensates for the deformation of the wafer. The scheme provided in the embodiment can ensure that the pressure between the cleaning component and the wafer is constant, the problem of reaction lag does not exist, and the cleaning effect of the wafer is greatly improved.

Description

Technical Field

[0001] This application belongs to the field of wafer cleaning technology, and more specifically, relates to a control method and system, a wafer post-processing apparatus, and a medium or program product. Background Technology

[0002] In the manufacturing of integrated circuits (ICs), wafers come into contact with various organic substances, particles, and metals during continuous processing, especially during chemical mechanical polishing (CMP). This leads to contaminants forming on the wafer surface. To prevent these contaminants from damaging the wafer's circuitry, they need to be cleaned without damaging the wafer's surface or electrical properties. Furthermore, to ensure "dry in, dry out" operation of CMP equipment, a wafer post-processing unit is installed at the rear end of the polishing unit to clean and dry the wafer.

[0003] During wafer cleaning, the mechanical action between the cleaning components and the wafer is generally used to remove particles from the wafer surface. The stability of the pressure between the cleaning components and the wafer is closely related to the cleaning effect.

[0004] Taking horizontal cleaning as an example, horizontal cleaning typically employs a horizontal mechanism to clamp the wafer, a swing motor to drive the cleaning component to swing on the wafer, and a lifting motor to control the downward pressure of the cleaning component on the wafer surface to achieve horizontal cleaning. To maintain consistent pressure at different locations on the wafer, the industry usually installs sensors on the swing arm of the cleaning component to read the pressure value acting on the wafer surface. The lifting motor adjusts the height of the cleaning component based on the pressure value, thereby achieving constant pressure acting on the wafer surface.

[0005] However, the above scheme has the problem that the pressure acting on the wafer surface cannot remain constant due to the lag in pressure feedback. Summary of the Invention

[0006] This application provides a control method and system, a wafer post-processing apparatus, a medium or program product, which aims to at least solve one of the technical problems existing in the prior art.

[0007] A first aspect of this application provides a control method for a wafer post-processing apparatus, the wafer post-processing apparatus including a cleaning component for cleaning a wafer, the method including: determining deformation parameters of the wafer; determining a control distance of the cleaning component based on a preset motion scheme of the cleaning component and the deformation parameters; and controlling the movement of the cleaning component based on the control distance and the preset motion scheme, so that the movement of the cleaning component compensates for the deformation of the wafer.

[0008] In one embodiment, the preset motion scheme includes oscillation on the wafer surface. Determining the control distance of the cleaning component based on the preset motion scheme of the cleaning component and the deformation parameters includes: determining a first distance between the cleaning component and the center of the wafer in a direction parallel to the wafer surface based on the oscillation angle of the cleaning component; determining a second distance between the cleaning component and the wafer in a direction perpendicular to the wafer surface based on the first distance and the deformation parameters, and determining the second distance as the control distance.

[0009] In one embodiment, the method further includes: detecting the pressure between the cleaning component and the wafer to obtain a pressure detection value; determining the deformation compensation of the wafer caused by the movement of the cleaning component based on the pressure detection value; and adjusting the deformation parameters of the wafer based on the deformation compensation.

[0010] In one embodiment, determining the deformation parameters of the wafer includes: determining the deformation amount at each position of the wafer; fitting the deformation amount at each position of the wafer to obtain a deformation function of the wafer; and determining the deformation parameters based on the deformation function.

[0011] In one embodiment, there are several preset pressures between the cleaning component and the wafer. Determining the deformation amount at each position of the wafer includes: calculating the deformation amount at each position of the wafer corresponding to each preset pressure based on the preset pressure between the cleaning component and the wafer, so as to obtain a set of deformation parameters corresponding to each preset pressure.

[0012] In one embodiment, determining the control distance of the cleaning component based on the preset motion scheme of the cleaning component and the deformation parameters includes: determining a target pressure selected by the user from the plurality of preset pressures, and determining a set of target deformation parameters corresponding to the target pressure; and determining the control distance of the cleaning component based on the preset motion scheme of the cleaning component and the target deformation parameters.

[0013] A second aspect of this application provides a wafer post-processing apparatus, comprising: a cleaning component for cleaning a wafer; a first driving component for driving the cleaning component to move according to a preset motion scheme; and a second driving component for driving the cleaning component to move according to a control distance, so that the movement of the cleaning component compensates for the deformation of the wafer, wherein the control distance is determined according to the preset motion scheme and the deformation parameters of the wafer.

[0014] A third aspect of this application provides a control system for a wafer post-processing apparatus, comprising: a host computer and a wafer post-processing apparatus, the wafer post-processing apparatus including a cleaning component and a driving component; the host computer is used to determine the deformation parameters of the wafer, and to determine the control distance of the cleaning component according to a preset motion scheme of the cleaning component and the deformation parameters; the driving component is used to drive the cleaning component to move according to the preset motion scheme and the control distance under the control of the host computer, so that the movement of the cleaning component compensates for the deformation of the wafer.

[0015] In one embodiment, the host computer is used to determine a first distance between the cleaning component and the center of the wafer in a direction parallel to the wafer surface based on the swing angle of the cleaning component, and to determine a second distance between the cleaning component and the wafer in a direction perpendicular to the wafer surface based on the first distance and the deformation parameter, and to determine the second distance as the control distance.

[0016] In one embodiment, the host computer stores several preset pressures and their corresponding set of deformation parameters in advance; the host computer is used to determine the target pressure selected by the user from the several preset pressures, and to determine the set of target deformation parameters corresponding to the target pressure from the storage; and to determine the control distance of the cleaning component according to the preset motion scheme of the cleaning component and the target deformation parameters.

[0017] A fourth aspect of this application provides a computer-readable storage medium storing executable instructions for causing a processor to execute the executable instructions to implement the method described above.

[0018] A fifth aspect of this application provides a computer program product or computer program that includes executable instructions stored in a computer-readable storage medium; when a processor of an electronic device reads the executable instructions from the computer-readable storage medium and executes the executable instructions, the method described above is implemented.

[0019] The beneficial effects of this application are as follows: First, based on the preset motion scheme and deformation parameters of the cleaning component, the control distance of the cleaning component can be determined in advance. Then, the movement of the cleaning component is controlled according to the preset motion scheme, and the wafer can be cleaned according to the preset plan. At the same time, controlling the movement of the cleaning component according to the control distance can ensure that the movement of the cleaning component can compensate for the deformation of the wafer during the cleaning process, ensuring that the pressure between the cleaning component and the wafer is constant, and there is no problem of response lag, which greatly improves the cleaning effect of the wafer. In addition, the above control process does not rely on pressure detection and feedback control logic, saving costs. Attached Figure Description

[0020] The advantages of this application will become clearer and easier to understand through the detailed description in conjunction with the following accompanying drawings, which are merely illustrative and do not limit the scope of protection of this application, wherein:

[0021] Figure 1 This is a schematic diagram of a horizontal cleaning device.

[0022] Figure 2 yes Figure 1 The flowchart corresponding to the horizontal cleaning device shown is as follows:

[0023] Figure 3 yes Figure 2 The diagram shows the pressure changes corresponding to the process flow.

[0024] Figure 4 This is a schematic flowchart of a control method for a wafer post-processing apparatus provided in an embodiment of this application;

[0025] Figure 5 This is a schematic diagram illustrating the change in the amount of deformation of the wafer;

[0026] Figure 6 This is a schematic flowchart of a control method for a wafer post-processing apparatus provided in another embodiment of this application;

[0027] Figure 7A This is a flowchart illustrating the movement of a cleaning component in a wafer post-processing apparatus according to another embodiment of this application.

[0028] Figure 7B yes Figure 7A A schematic diagram showing the locations of the cleaning components corresponding to the process shown;

[0029] Figure 8 This is a schematic diagram of the structure of a wafer post-processing apparatus provided in one embodiment of this application;

[0030] Figure 9 This is a schematic diagram of the control system of a wafer post-processing apparatus provided in one embodiment of this application. Detailed Implementation

[0031] The technical solutions described in this application will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific implementations of this application, used to illustrate the concept of this application; these descriptions are illustrative and exemplary, and should not be construed as limiting the implementation methods or the scope of protection of this application. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and description of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein.

[0032] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of this application and to schematically show the shapes of the various parts and their interrelationships. It should be understood that, in order to clearly show the structure of the various components of the embodiments of this application, the drawings are not drawn to the same scale, and the same reference numerals are used to indicate the same parts in the drawings.

[0033] In this invention, "Chemical Mechanical Polishing (CMP)" is also called "Chemical Mechanical Planarization (CMP)," and a wafer is also called a substrate; their meanings and practical functions are equivalent. The term "comprising" and similar expressions should be understood as open-ended inclusion, i.e., "including but not limited to." The term "based on" should be understood as "at least partially based on." The term "one embodiment" or "this embodiment" should be understood as "at least one embodiment." The terms "first," "second," etc., may refer to different or the same objects and are used only to distinguish the objects referred to, without implying a specific spatial order, temporal order, order of importance, etc., of the objects referred to. In some embodiments, values, processes, selected items, determined items, equipment, apparatus, means, parts, components, etc., are referred to as "best," "lowest," "highest," "minimum," "maximum," etc. It should be understood that such descriptions are intended to indicate that selection can be made from a number of available functional options, and that such selection is not necessarily better, lower, higher, smaller, larger, or otherwise preferred than other options in any other respect or in all respects.

[0034] The embodiments disclosed in this application generally relate to wafer post-processing apparatus used in the semiconductor device manufacturing industry.

[0035] Taking the horizontal cleaning device commonly used in wafer post-processing equipment as an example, such as Figure 1 The horizontal cleaning device shown includes: chuck 11, swing motor 12, lifting motor 13, brush head 14, and wafer 15.

[0036] The horizontal cleaning device can hold the wafer 15 with a horizontally set chuck 11, drive the brush head 14 to swing on the wafer surface with a swing motor 12, and adjust the vertical position of the brush head with a lifting motor 13.

[0037] See Figure 2 The figure shows a schematic diagram of a cleaning process using the aforementioned horizontal cleaning device, which includes:

[0038] S11, The lifting motor presses down to the target position.

[0039] The initial value of this target position can be the horizontal position of the wafer edge, and the subsequent target position is determined according to step S14.

[0040] S12, the oscillating motor oscillates.

[0041] The brush head can swing on the wafer to clean it under the drive of the swing motor. Except when the process is executed for the first time, the lifting motor needs to be pressed down to the horizontal position of the wafer edge before the swing starts. In the subsequent repeated execution of this process, step S12 is executed continuously according to the preset swing path and is executed in parallel with the other steps. There is no sequential relationship between them.

[0042] S13, The pressure sensor continuously provides feedback on the pressure value exerted by the brush head on the wafer.

[0043] S14. The pressure feedback value is uploaded to the Programmable Logic Controller (PLC). The PLC calculates the deviation from the target pressure value and calculates the height that the lifting motor needs to move based on the deviation.

[0044] Then S11-S14 can be repeated until the entire swing is completed.

[0045] In the above process, since it takes a certain amount of time to execute S11-S14 and the movement of the lifting motor also takes a certain amount of time, after the lifting motor moves to the corresponding height, the swing motor is no longer in its original position. This causes the pressure feedback scheme to have a lag, resulting in the pressure acting on the wafer surface not being able to remain constant.

[0046] See Figure 3 This demonstrates a method through Figure 2 The process of controlling the motor is shown, illustrating the trend of pressure variation with the distance between the brush head and the center. Figure 3 The horizontal axis represents the distance between the brush head and the center of the wafer, and the vertical axis represents the pressure value. For example... Figure 3 As shown, the pressure value continuously decreases as the brush head swings from the wafer edge to the wafer center, and the curve includes many burrs, indicating that the pressure value fluctuates as it decreases.

[0047] Whether the pressure value is constantly decreasing or fluctuating, it indicates that the pressure acting on the wafer surface cannot remain constant, which leads to poor cleaning effect of the wafer and may even damage the wafer.

[0048] To address the aforementioned issues, this application provides a control scheme for a wafer post-processing apparatus.

[0049] See Figure 4This diagram illustrates a flow chart of a control method for a wafer post-processing apparatus according to an embodiment of this application. The wafer post-processing apparatus includes a cleaning component for cleaning wafers. Figure 4 As shown, the control methods include:

[0050] S21. Determine the deformation parameters of the wafer.

[0051] A wafer is also called a substrate, and the two terms have the same meaning and function.

[0052] Wafers deform under the influence of internal stress, gravity, or external forces. Deformation parameters characterize the deformation of the wafer. Since different types of wafers may exhibit different deformation patterns, deformation parameters corresponding to specific wafer types can be determined.

[0053] Since wafers are generally circular, deformation parameters can be used to characterize the relationship between the distance from any position on the wafer to the center of the wafer and the amount of deformation at that position.

[0054] When fixing a wafer, a chuck is used to hold the edge of the wafer and keep it horizontal. As a result, the amount of deformation of the wafer from the edge to the center increases continuously.

[0055] For example, see Figure 5 This shows a schematic diagram illustrating the variation in the deformation of a wafer. Figure 5 The horizontal axis represents the distance from the wafer center, and the vertical axis represents the magnitude of wafer deformation. For example... Figure 5 As shown, the wafer deformation increases continuously from the wafer edge to the wafer center. Of course, Figure 5 This is merely an example; other wafer deformation scenarios are also within the scope of protection of this application.

[0056] S22. Determine the control distance of the cleaning component based on the preset motion scheme and deformation parameters of the cleaning component.

[0057] When cleaning wafers using cleaning components, a pre-defined motion scheme is planned for the cleaning components on the wafer surface to ensure complete cleaning. This pre-defined motion scheme typically involves movement parallel to the wafer surface.

[0058] The precise position of the cleaning component on the wafer surface can be determined based on the preset motion scheme. Then, the wafer deformation amount at that position can be determined by combining the deformation parameters. Finally, the control distance of the cleaning component can be determined based on the wafer deformation amount at that position.

[0059] It should be noted that the structure of the controlled cleaning component can be as follows: Figure 1As shown, other structures may also be used, all of which are within the scope of protection of this application.

[0060] Optionally, in this embodiment, the preset motion scheme includes oscillation on the wafer surface. Step S22 may specifically include: determining a first distance between the cleaning component and the wafer center in a direction parallel to the wafer surface based on the oscillation angle of the cleaning component; determining a second distance between the cleaning component and the wafer in a direction perpendicular to the wafer surface based on the first distance and deformation parameters, and defining the second distance as the control distance. The first distance between the cleaning component and the wafer center can be obtained through the oscillation angle, and the deformation amount of the corresponding position of the cleaning component can be determined based on the first distance and deformation parameters, thereby obtaining the second distance. This allows the cleaning component to move according to the second distance to compensate for the deformation, thus ensuring constant pressure between the cleaning component and the wafer.

[0061] Specifically, the oscillation on the wafer surface can be: oscillating between the first edge and the second edge of the wafer, with the oscillation motion passing through the center of the wafer, and the axis of oscillation being perpendicular to the wafer surface.

[0062] During the oscillation process, the cleaning component repeatedly moves closer to and further away from the center, thus the first distance repeatedly decreases and increases; correspondingly, according to Figure 5 As shown in the wafer deformation data, as the first distance changes, the wafer deformation at the position through which the cleaning component passes also repeatedly increases and decreases, and the change in control distance is consistent with the change in wafer deformation.

[0063] S23. Control the movement of the cleaning components according to the control distance and preset motion scheme so that the movement of the cleaning components compensates for the deformation of the wafer.

[0064] In this embodiment, the control distance of the cleaning component can be predetermined based on the preset motion scheme and deformation parameters of the cleaning component. Then, the movement of the cleaning component is controlled according to the preset motion scheme, and the wafer can be cleaned according to the preset plan. At the same time, controlling the movement of the cleaning component according to the control distance can ensure that the movement of the cleaning component can compensate for the deformation of the wafer during the cleaning process, ensuring that the pressure between the cleaning component and the wafer is constant and there is no problem of response lag, which greatly improves the cleaning effect of the wafer. In addition, the above control process does not rely on pressure detection and feedback control logic, saving costs.

[0065] Optionally, in this embodiment, if the cleaning component can perform pressure detection, the method may further include steps S24-S26, where the dashed lines in the figure indicate that the steps are optional.

[0066] S24. The pressure between the cleaning component and the wafer is detected to obtain the pressure detection value.

[0067] In this embodiment, a force sensor can be installed on the swing arm of the cleaning component to read the force exerted by the cleaning component on the wafer surface, i.e., the pressure between the cleaning component and the wafer, and obtain the pressure monitoring value.

[0068] S25. Based on the pressure detection value, determine the deformation compensation of the wafer caused by the movement of the cleaning components.

[0069] If the pressure detection value deviates significantly from the preset constant pressure value, it indicates that the movement of the cleaning component is not effectively compensating for wafer deformation. Conversely, if the pressure detection value deviates slightly from the preset constant pressure value, it indicates that the movement of the cleaning component is effectively compensating for wafer deformation.

[0070] S26. Adjust the wafer deformation parameters according to the deformation compensation situation.

[0071] If the deformation compensation is poor, the deformation parameters of the wafer can be significantly adjusted, or the deformation parameters can be redefined; if the deformation compensation is good, the deformation parameters can be finely adjusted or not adjusted at all, all of which are within the scope of protection of this application.

[0072] In this embodiment, the movement of the cleaning component is controlled according to a preset motion scheme, which can clean the wafer according to the preset motion scheme. At the same time, the movement of the cleaning component is controlled according to the control distance, which can ensure that the movement of the cleaning component can compensate for the deformation of the wafer during the cleaning process, and ensure that the pressure between the cleaning component and the wafer is constant. There is no problem of response lag, which greatly improves the cleaning effect of the wafer. In addition, the above control process does not rely on pressure detection and feedback control logic, saving costs.

[0073] It should be understood that the method provided in this application can be applied to any processing device with data processing capabilities, which can be a terminal or a server. In practical applications, the processing device can be independent, a cluster of multiple devices, or a pre-configured computing platform.

[0074] See Figure 6 This illustrates a flowchart of a control method for a wafer post-processing apparatus according to another embodiment of this application, as shown below. Figure 6 As shown, it includes:

[0075] S31. Determine the amount of deformation at each location on the wafer.

[0076] In this embodiment, for a type of wafer, a wafer sample can be determined, and the deformation amount of the wafer sample can be collected to determine the deformation amount at each location of the wafer; alternatively, the deformation amount at each location of the wafer can be calculated based on the wafer's shape parameters, material parameters, etc. Both are within the scope of protection of this application.

[0077] Optionally, in this embodiment, there are several preset pressures between the cleaning component and the wafer. Since the deformation of the wafer may differ when different pressures are applied, step S31 may include: calculating the deformation corresponding to each preset pressure based on the preset pressures between the cleaning component and the wafer, to obtain a set of deformation parameters corresponding to each preset pressure. Therefore, multiple preset pressures for cleaning the wafer can be preset. When cleaning the wafer, the user can select from multiple preset pressures according to their needs, improving the versatility of the cleaning solution provided in this application.

[0078] S32. Fit the deformation amount at each position of the wafer to obtain the deformation function of the wafer, and determine the corresponding deformation parameters.

[0079] Specifically, the deformation at each location on the wafer can include both the radius of that location and the amount of deformation. Therefore, fitting the deformation can be done with the radius as the independent variable and the deformation as the dependent variable.

[0080] The fitted deformation function can be, for example: y = Ax 3 +Bx 2 +Cx+D.

[0081] Where x is the radius, y is the deformation amount, and A, B, C, and D can be deformation parameters.

[0082] Based on the fitted deformation function, the deformation amount can be obtained by substituting the distance from any position on the wafer to the center of the wafer into the deformation function.

[0083] S33. Determine the control distance of the cleaning component based on the preset motion scheme and deformation parameters of the cleaning component.

[0084] Specifically, in this embodiment, the control distance can be determined based on the preset motion scheme of the cleaning component and the deformation function including deformation parameters, or the control distance can be determined based on the preset motion scheme of the cleaning component and independent deformation parameters, both of which are within the protection scope of this application.

[0085] Optionally, in this embodiment, S33 may specifically include: determining the target pressure selected by the user from several preset pressures, and determining a set of target deformation parameters corresponding to the target pressure; and determining the control distance of the cleaning component based on the preset motion scheme of the cleaning component and the target deformation parameters.

[0086] In this embodiment, there are several preset pressures between the cleaning component and the wafer, and each preset pressure corresponds to a set of deformation parameters. Specifically, at least one of the deformation parameters A, B, C, and D corresponding to different preset pressures is different.

[0087] Once the user selects a target pressure from multiple preset pressures, the control distance can be determined based on a set of deformation parameters A, B, C, and D corresponding to the target pressure, thereby maintaining the pressure between the cleaning component and the wafer at the target pressure.

[0088] S34. Control the movement of the cleaning components according to the control distance and preset motion scheme so that the movement of the cleaning components compensates for the deformation of the wafer.

[0089] The specific implementation of this step is similar to step S23 in the above embodiment, and will not be repeated here.

[0090] The solution provided in this embodiment can preset multiple pressures for cleaning wafers. When cleaning wafers, users can select from multiple preset pressures according to their needs, which improves the versatility of the cleaning solution provided in this application.

[0091] It should be understood that the method provided in this application can be applied to any processing device with data processing capabilities, which can be a terminal or a server. In practical applications, the processing device can be independent, a cluster of multiple devices, or a pre-configured computing platform.

[0092] The following example illustrates how to control the movement of cleaning components based on a control distance and a preset motion scheme.

[0093] See Figure 7A , Figure 7B The deformation parameters or deformation functions in the above embodiments can be programmed into a host computer. The host computer can determine the control distance based on the preset motion scheme and deformation parameters, control the swing motor according to the preset motion scheme, and control the lifting motor according to the control distance. See [link to relevant documentation]. Figure 7A Specific control methods may include:

[0094] S41, the swing motor swings from Home to the edge.

[0095] Home refers to the initial position.

[0096] S42, The lifting motor moves to the height Hedge corresponding to the target pressure.

[0097] See Figure 7B The figure shows the height Hedge of the lifting motor when the cleaning component is at the edge of the wafer.

[0098] S43, the swing motor swings to any position in the middle of the wafer, and the lifting motor moves to the height Hmiddle corresponding to the target pressure.

[0099] See Figure 7BThe figure shows the height Hmiddle of the lifting motor when the cleaning component is at any position in the middle.

[0100] S44. The swing motor swings to the center of the wafer, and the lifting motor moves to the height Hcenter corresponding to the target pressure.

[0101] See Figure 7B The figure shows the height Hcenter of the lifting motor when the cleaning component is at the center of the wafer (i.e., the wafer center).

[0102] S45, complete the full swing.

[0103] See Figure 8 The figure shows a schematic diagram of a wafer post-processing apparatus according to an embodiment of this application. As shown, it includes:

[0104] Cleaning component 81 is used for cleaning wafers;

[0105] The first driving component 82 is used to drive the cleaning component to move according to a preset motion scheme;

[0106] The second driving component 83 is used to drive the cleaning component to move according to a control distance so that the movement of the cleaning component compensates for the deformation of the wafer, wherein the control distance is determined according to a preset motion scheme and the deformation parameters of the wafer.

[0107] Specifically, the first driving component can be a swing motor, and the second driving component can be a lifting motor.

[0108] The specific calculation methods for the preset motion scheme used to control the first driving component and the control distance used to control the second driving component can be referred to the aforementioned method embodiments, and will not be repeated here.

[0109] In this embodiment, the first driving component is controlled to drive the cleaning component to move according to a preset motion scheme, so that the wafer can be cleaned according to the preset plan. At the same time, the second driving component is controlled to drive the cleaning component to move according to the control distance, which can ensure that the movement of the cleaning component can compensate for the deformation of the wafer during the cleaning process, so that the pressure between the cleaning component and the wafer is constant and there is no problem of response lag, which greatly improves the cleaning effect of the wafer. In addition, the above control process does not rely on pressure detection and feedback control logic, saving costs.

[0110] See Figure 9 The figure shows a schematic diagram of the control system of a wafer post-processing apparatus according to an embodiment of this application. As shown, it includes: a host computer 91 and a wafer post-processing device 92.

[0111] The wafer post-processing unit includes a cleaning component and a driving component. The host computer is used to determine the deformation parameters of the wafer and, based on the preset motion scheme and deformation parameters of the cleaning component, determines the control distance of the cleaning component. The driving component is used to drive the cleaning component to move according to the preset motion scheme and control distance under the control of the host computer, so that the movement of the cleaning component compensates for the deformation of the wafer.

[0112] The deformation parameters or deformation functions in the above embodiments can be programmed into a host computer. The host computer can determine the control distance according to the preset motion scheme and deformation parameters, control the swing motor according to the preset motion scheme, and control the lifting motor according to the control distance.

[0113] Optionally, in this embodiment, the host computer is used to determine a first distance between the cleaning component and the wafer center in a direction parallel to the wafer surface based on the swing angle of the cleaning component, and to determine a second distance between the cleaning component and the wafer in a direction perpendicular to the wafer surface based on the first distance and the deformation parameters, and to determine the second distance as the control distance.

[0114] Optionally, in this embodiment, the host computer stores several preset pressures and their corresponding set of deformation parameters in advance; the host computer is used to determine the target pressure selected by the user from several preset pressures, and to determine the set of target deformation parameters corresponding to the target pressure from the storage; and to determine the control distance of the cleaning component according to the preset motion scheme of the cleaning component and the target deformation parameters.

[0115] The specific implementation of each step in the host computer can be found in the aforementioned method implementation examples, and will not be repeated here.

[0116] In this embodiment, the host computer controls the driving component to drive the cleaning component to move according to a preset motion scheme. The wafer can be cleaned according to the preset plan. At the same time, the driving component is controlled to drive the cleaning component to move according to the control distance. This ensures that the movement of the cleaning component can compensate for the deformation of the wafer during the cleaning process, and ensures that the pressure between the cleaning component and the wafer is constant. There is no problem of response lag, which greatly improves the cleaning effect of the wafer. In addition, the above control process does not rely on pressure detection and feedback control logic, which saves costs.

[0117] Another embodiment of this application provides a computer-readable storage medium having executable instructions stored thereon, which, when a processor executes the executable instructions, implement the method described above.

[0118] Another embodiment of this application provides a computer program product or computer program, which includes executable instructions stored in a computer-readable storage medium; when the processor of an electronic device reads the executable instructions from the computer-readable storage medium and executes the executable instructions, the method described above is implemented.

[0119] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0120] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A control method for a wafer post-processing apparatus, characterized in that, A wafer post-processing apparatus includes a cleaning component for cleaning a wafer. The method includes: determining the deformation amount at various locations on the wafer; fitting the deformation amount at various locations on the wafer to obtain a deformation function of the wafer; determining the deformation parameters of the wafer based on the deformation function; determining a control distance of the cleaning component based on a preset motion scheme of the cleaning component and the deformation parameters; controlling the movement of the cleaning component based on the control distance and the preset motion scheme to compensate for the deformation of the wafer; detecting the pressure between the cleaning component and the wafer during the movement of the cleaning component to obtain a pressure detection value; determining the deformation compensation of the wafer by the movement of the cleaning component based on the pressure detection value; adjusting the deformation parameters of the wafer based on the deformation compensation, and redetermining the control distance based on the adjusted deformation parameters.

2. The method according to claim 1, characterized in that, The preset motion scheme includes the oscillation of the cleaning component along the radial direction of the wafer, determining a first distance of the cleaning component based on the oscillation angle, determining a second distance of the cleaning component based on the first distance and the deformation parameter, and using the second distance as the control distance.

3. The method according to claim 1, characterized in that, The step of adjusting the deformation parameters of the wafer according to the deformation compensation situation includes: when the deformation compensation situation is such that the deviation between the pressure detection value and the target pressure value is large, the deformation parameters are significantly adjusted or the deformation parameters are redefined; when the deviation is small, the deformation parameters are finely adjusted or not adjusted.

4. The method according to claim 1, characterized in that, There are several preset pressures between the cleaning component and the wafer; based on each preset pressure, the deformation amount of the wafer under each preset pressure is calculated, the deformation amount of the wafer under each preset pressure is fitted to obtain the deformation function of the wafer under each preset pressure, and multiple sets of deformation parameters corresponding to each preset pressure are determined based on each deformation function.

5. The method according to claim 4, characterized in that, Select a target pressure from each of the preset pressures, determine a target deformation parameter from multiple sets of deformation parameters based on the target pressure, and determine the control distance based on the target deformation parameter.

6. A wafer post-processing apparatus, characterized in that, include: Cleaning components, used for cleaning wafers; The first driving component is used to drive the cleaning component to move according to a preset motion scheme; The second driving component is used to drive the cleaning component to move according to a control distance so that the movement of the cleaning component compensates for the deformation of the wafer; A pressure detection component is used to detect the pressure between the cleaning component and the wafer during the movement of the cleaning component, and obtain a pressure detection value; a control component is used to determine the deformation amount at each position of the wafer, fit the deformation amount at each position of the wafer to obtain a deformation function, determine the deformation parameters according to the deformation function, and determine the control distance according to the preset motion scheme and the deformation parameters. The control component is also used to determine the deformation compensation of the wafer caused by the movement of the cleaning component based on the pressure detection value detected by the pressure detection component, adjust the deformation parameters based on the deformation compensation, and redetermine the control distance based on the adjusted deformation parameters.

7. A control system for a wafer post-processing apparatus, characterized in that, include: The wafer post-processing device includes a cleaning component and a driving component. The device also includes a pressure sensor for detecting the pressure between the cleaning component and the wafer during the movement of the cleaning component, obtaining a pressure detection value. The host computer determines the deformation amount at various positions on the wafer, fits the deformation amount at each position to obtain a deformation function, determines deformation parameters based on the deformation function, and determines the control distance of the cleaning component based on a preset movement scheme and the deformation parameters. The host computer further determines the deformation compensation of the wafer caused by the movement of the cleaning component based on the pressure detection value, adjusts the deformation parameters based on the deformation compensation, and redetermines the control distance based on the adjusted deformation parameters. The driving component is used to drive the cleaning component to move according to the preset motion scheme and control distance under the control of the host computer, so that the movement of the cleaning component compensates for the deformation of the wafer.

8. The control system according to claim 7, characterized in that, The preset motion scheme includes the oscillation of the cleaning component along the radial direction of the wafer; the host computer is used to determine a first distance of the cleaning component based on the oscillation angle, and to determine a second distance of the cleaning component based on the first distance and the deformation parameter, and to use the second distance as the control distance.

9. The control system according to claim 7, characterized in that, The host computer stores several preset pressures and their corresponding deformation parameters in advance; the host computer is used to select a target pressure from each of the preset pressures, determine the corresponding target deformation parameters according to the target pressure, and determine the control distance according to the target deformation parameters.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the control method of the wafer post-processing apparatus as described in any one of claims 1 to 5.

11. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the control method of the wafer post-processing apparatus as described in any one of claims 1 to 5.

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