一种改性二硫化钼及其制备方法和应用
By modifying MoS2 with Pt, the problems of wide bandgap and low light absorption efficiency of MoS2 are solved, realizing a high-performance photodetector with a wide detection band, suitable for room temperature operation and large-scale manufacturing.
CN117361627BActive Publication Date: 2026-07-17NORTHWESTERN POLYTECHNICAL UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NORTHWESTERN POLYTECHNICAL UNIV
- Filing Date
- 2023-10-11
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The wide bandgap of existing MoS2 results in a narrow detectable wavelength range and low light absorption efficiency, which limits its application in photodetectors.
Method used
Pt modification of MoS2 reduces its band gap and enhances its light absorption efficiency. The specific steps include exfoliating single-crystal MoS2 nanosheets, annealing, and immersing in a soluble Pt salt solution.
Benefits of technology
It achieves a reduction in the MoS2 bandgap to 0.47 eV, expands the detection range to 500–1600 nm, and has a millisecond-level response speed. It is a high-performance photodetector suitable for room temperature operation, with low cost and suitable for large-scale manufacturing.
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Figure CN117361627B_ABST
Abstract
本发明属于光电探测器材料技术领域，具体涉及一种改性二硫化钼及其制备方法和应用，包括以下步骤：将单晶MoS2剥离，得到MoS2纳米片；在惰性气体和H2的混合气氛中，将所述MoS2纳米片在300～400℃退火处理；将退火处理后的MoS2纳米片在可溶性Pt盐溶液中浸泡，之后取出清洗，干燥，制得Pt修饰的MoS2。本发明实现了MoS2带隙的减小，且加强了光吸收效率。探测器可在室温下工作，具备极高的性能和较宽的探测范围，且响应速度仅为毫秒级。制备过程能耗低，原料成本低，适用于大规模的材料制造。
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