Shutdown control method and device, electronic equipment and storage medium

Abstract

Embodiments of the present application provide a furnace shutdown control method, device, equipment and medium. The method comprises: determining key parameters affecting the furnace shutdown time in a Czochralski process, wherein the key parameters include the running time, the length of the current ingot, and the estimated single yield; determining a completion section in the Czochralski process based on a preset completion section rule and according to the key parameters; and controlling the Czochralski equipment to shut down in the Czochralski process in the completion section, so that the key parameters affecting the furnace shutdown time, such as the running time, the length of the current ingot, and the estimated single yield, are automatically predicted for the completion section in the Czochralski process, and the furnace is controlled to shut down at the appropriate time. The problem of poor control of the furnace shutdown time is solved, the accuracy of the determination of the furnace shutdown time is improved, the workload of manual operation is reduced, and the occurrence of abnormalities such as silicon leakage, substandard product quality, and excessively low single yield of the whole furnace is avoided due to the unsuitable furnace shutdown time.

Description

Technical Field

[0001] This invention relates to the field of crystal preparation technology, and in particular to a furnace shutdown control method, a furnace shutdown control device, an electronic device, and a storage medium. Background Technology

[0002] The main process for preparing monocrystalline silicon materials is the Czochralski process (CZ), which uses the Czochralski method to refine polycrystalline silicon raw materials into monocrystalline silicon. The process of generating rod-shaped monocrystalline silicon crystals during the Czochralski single crystal growth process includes steps such as loading, heating the molten material, temperature control, crystal pulling, shoulder formation, shoulder rotation, equal diameter shaping, and finishing.

[0003] After the polycrystalline silicon raw material is melted, crystal pulling cannot begin immediately because the temperature is higher than the crystal pulling temperature. It must be cooled down to the appropriate temperature. Crystal pulling involves placing a seed crystal (a single crystal shaped to a specific form) pre-attached to the end of a steel wire rope into contact with the liquid surface. At the crystal pulling temperature, silicon molecules grow along the lattice direction of the seed crystal, forming a single crystal. Shoulder formation involves gradually growing the crystal diameter to the required size. During shoulder formation, a section of crystal is pulled out, gradually increasing in length and diameter to approximately the required diameter to eliminate dislocations. Once the crystal reaches the required diameter during shoulder formation, it enters the shoulder turning process. Shoulder turning controls the crystal diameter to the required size. After shoulder turning, the constant diameter control step begins. In this step, automatic control of the pulling speed and temperature ensures the crystal grows to the set diameter. After constant diameter growth, the crystal enters the finishing process, which also aims to eliminate dislocations. After the finishing touches are completed, the crystal growth is basically finished. The crystal is then left in the silicon single crystal furnace for a certain period of time to complete the annealing of the crystal.

[0004] In the production of monocrystalline silicon rods, traditional methods of predicting furnace shutdown rely mainly on manual experience and supplemented by manual statistical data to estimate a shutdown time. This method suffers from low accuracy and a large workload. If the shutdown time is inappropriate, it can also lead to abnormalities such as silicon leakage, substandard product quality, and excessively low single-furnace output. Summary of the Invention

[0005] In view of the above problems, embodiments of the present invention are proposed to provide a shutdown control method that overcomes or at least partially solves the above problems, so as to solve the problems of inaccurate shutdown time and large workload.

[0006] Accordingly, embodiments of the present invention also provide a shutdown control device, an electronic device, and a storage medium to ensure the implementation and application of the above method.

[0007] To address the above problems, this invention discloses a shutdown control method, comprising: The key parameters affecting the shutdown timing during the Czochralski single crystal growth process are determined. These key parameters include the running time, the length of the current crystal rod segment, and the estimated yield per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal rod segment is the current length of the crystal rod after the current feeding. The estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. Based on the preset completion segment rules, the completion segment in the Czochralski single crystal process is determined according to the key parameters; During the Czochralski single crystal pulling process in the final stage, the Czochralski single crystal pulling equipment is shut down.

[0008] Optionally, the key parameters affecting the furnace shutdown timing during the Czochralski single crystal growth process include: The system time, evacuation start time, length of the current crystal rod segment, length of the crystal rod and length of the returned dislocation of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient are obtained. Based on the system time, evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion factor, the running time and estimated yield per unit are calculated; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length.

[0009] Optionally, determining the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

[0010] Optionally, the key parameters also include shutdown concentration, which characterizes the number of Czochralski single crystal devices that shut down within a preset time period. The step of determining the completion segment in the Czochralski single crystal process based on preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit, and the furnace shutdown concentration is less than a preset concentration threshold, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

[0011] Optionally, the key parameters also include shutdown concentration and crystal formation rate. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period, and the crystal formation rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The determination of the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated single output is greater than a preset single output threshold, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold, then the segment after the refeeding during the Czochralski single crystal process is determined to be the final segment.

[0012] Optionally, the key parameters also include shutdown concentration, crystallization rate, yield, resistivity of the crystal rod, and oxygen and carbon content. The shutdown concentration represents the number of Czochralski single crystal pulling machines shut down within a preset time period. The crystallization rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal pulling machine during this operation. The yield rate is the quotient of the finished products produced by the Czochralski single crystal pulling machine during this operation and the total amount of raw materials fed into the machine. The determination of the completion segment in the Czochralski single crystal pulling process based on preset completion segment rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated output per unit is greater than a preset output per unit, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystal formation rate is not greater than a preset crystal formation rate threshold, and the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions, then the segment after the refeeding in the Czochralski single crystal process is determined to be the completed segment.

[0013] Optionally, the method further includes: If the runtime exceeds the upper limit of the preset runtime range, then the current segment in the Czochralski single crystal pulling process is determined to be the completed segment.

[0014] This invention also discloses a shutdown control device, comprising: The parameter determination module is used to determine the key parameters affecting the shutdown timing during the Czochralski single crystal growth process. The key parameters include the running time, the length of the current crystal rod segment, and the estimated output per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal rod segment is the current length of the crystal rod after the current feeding. The estimated output per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. The completion segment determination module is used to determine the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters. A shutdown control module is used to control the shutdown of the Czochralski single crystal pulling equipment during the final stage of the Czochralski single crystal pulling process.

[0015] Optionally, the parameter determination module includes: The data acquisition submodule is used to acquire system time, vacuum start time, length of the current crystal rod segment, length of the crystal rod and dislocation length of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient; The data calculation submodule is used to calculate the running time and estimated yield per unit based on the system time, the evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion factor; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length.

[0016] Optionally, the completion segment determination module includes: The first determining submodule is used to determine the current segment in the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit threshold.

[0017] Optionally, the key parameters also include shutdown concentration, which characterizes the number of Czochralski single crystal devices that shut down within a preset time period. The completion segment determination module includes: The second determining submodule is used to determine the current segment of the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit threshold, and the furnace shutdown concentration is less than a preset concentration threshold.

[0018] Optionally, the key parameters also include shutdown concentration and crystal formation rate. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period, and the crystal formation rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The completion segment determination module includes: The third determining submodule is used to determine the segment after the second feeding during the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated single output is greater than a preset single output threshold, the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold.

[0019] Optionally, the key parameters also include shutdown concentration, crystallization rate, yield, resistivity of the crystal rod, and oxygen and carbon content. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period. The crystallization rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The yield rate is the quotient of the finished products produced by the Czochralski single crystal machine during this operation and the total amount of raw materials fed into the machine. The completion segment determination module includes: The fourth determining submodule is used to determine the segment after the second feeding during the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated output per unit is greater than a preset output per unit, the furnace shutdown concentration is not less than a preset concentration threshold, the crystallization rate is not greater than a preset crystallization rate threshold, the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions.

[0020] Optionally, the device further includes: The determination module is used to determine the current segment of the Czochralski single crystal process as the completion segment if the running time is higher than the upper limit of the preset time range.

[0021] This invention also discloses an electronic device, characterized in that it includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; When a processor executes a program stored in memory, it implements the method steps described above.

[0022] This invention also discloses a readable storage medium, which, when the instructions in the storage medium are executed by the processor of an electronic device, enables the electronic device to execute one or more of the shutdown control methods described in this invention.

[0023] The embodiments of the present invention have the following advantages: According to embodiments of the present invention, by determining key parameters affecting the shutdown timing during the Czochralski single crystal pulling process, the key parameters include running time, current ingot length, and estimated yield per unit time. The running time is the running time of the Czochralski single crystal pulling equipment since the start of the current evacuation, the current ingot length is the current ingot length after the current feeding, and the estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal pulling equipment per unit time since the start of the current operation. Based on preset completion segment rules, the completion segment of the Czochralski single crystal pulling process is determined according to the key parameters. During the Czochralski single crystal pulling process in the completion segment, the Czochralski single crystal pulling equipment is shut down. This allows the key parameters affecting the shutdown timing, such as running time, current ingot length, and estimated yield per unit time, to be considered together, automatically predict the completion segment of the Czochralski single crystal pulling process and control the shutdown at an appropriate time. This solves the problem of difficult-to-control shutdown timing, improves the accuracy of shutdown timing determination, reduces manual workload, and avoids anomalies such as silicon leakage, substandard product quality, and excessively low overall furnace yield caused by inappropriate shutdown timing. Attached Figure Description

[0024] Figure 1 This is a flowchart illustrating the steps of an embodiment of the furnace shutdown control method of the present invention; Figure 2 This is a flowchart illustrating the steps of an embodiment of the furnace shutdown control method of the present invention; Figure 3 This is a schematic diagram of the process for determining the final stage; Figure 4 This is a diagram illustrating the branching of the final segment; Figure 5 This is a structural block diagram of an embodiment of the furnace shutdown control device of the present invention; Figure 6 This is a structural block diagram of a computing device for furnace shutdown control, according to an exemplary embodiment. Detailed Implementation

[0025] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] Reference Figure 1 The flowchart illustrates an embodiment of the furnace shutdown control method of the present invention, which may specifically include the following steps: Step 101: Determine the key parameters affecting the timing of furnace shutdown during the Czochralski single crystal growth process. The key parameters include the running time, the length of the current crystal rod segment, and the estimated yield per unit.

[0027] In this embodiment of the invention, the Czochralski single crystal process is the process of refining raw materials into single crystals using the Czochralski method, for example, the process of Czochralski single crystal silicon. The Czochralski single crystal process can be divided into the charging stage, melting stage, temperature control stage, crystal pulling stage, shoulder formation stage, shoulder turning stage, constant diameter stage, and finishing stage.

[0028] In this embodiment of the invention, the specific implementation method for determining the key parameters affecting the shutdown timing can include various approaches. For example, parameters can be obtained directly from the Czochralski crystal pulling equipment or its associated control system. Another example is parameters calculated based on parameters obtained from the Czochralski crystal pulling equipment or its associated control system; this embodiment of the invention does not impose limitations on this approach. In practical applications, if the Czochralski crystal pulling equipment or its associated control system can directly provide a certain key parameter, then it can be obtained directly from the Czochralski crystal pulling equipment or its associated control system.

[0029] The key parameters proposed in this embodiment of the invention may include running time, length of the current crystal rod segment, and estimated yield per unit. Other applicable parameters may also be included, and this embodiment of the invention does not impose any limitations on them.

[0030] The runtime is the total runtime of the Czochralski single crystal equipment since the start of this evacuation process, i.e., the elapsed time from the start of evacuation to the current time. The length of the crystal rod in this segment is the current length of the crystal rod after this feeding. The estimated output per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since this operation began.

[0031] For example, data related to the process, such as the operating status of the Czochralski (CZ) single crystal equipment, the length of the current crystal rod, the start time of evacuation, system time, and feed rate, are obtained from the central control system of the CZ single crystal equipment. For data extracted from different data sources, abnormal data is first processed through data completion and smoothing, and then processed using the corresponding single crystal process parameter calculation formulas to obtain the required key parameters, such as: estimated yield per unit = total single crystal length / preset length-weight conversion coefficient / running time; total single crystal length = crystal rod length - returned dislocation length; running time = system time - evacuation start time. Here, system time refers to the current time in the control system. Evacuation start time refers to the time recorded in the control system when evacuation begins. The preset length-weight conversion coefficient is predetermined based on the conversion relationship between the length and weight of the single crystal rod, and can be calculated based on the length and weight of the generated single crystal rods. The crystal rod length is the total length of all crystal rods produced by the CZ single crystal equipment since this operation. The returned dislocation length is the total length of the dislocation portion of all crystal rods produced by the CZ single crystal equipment since this operation.

[0032] In this embodiment of the invention, the acquired data can also undergo data preprocessing, such as removing abnormal data (e.g., if the runtime exceeds a certain value, it is considered abnormal data and is directly removed), and supplementing incomplete data.

[0033] Step 102: Based on the preset completion segment rules, determine the completion segment in the Czochralski single crystal pulling process according to the key parameters.

[0034] In this embodiment of the invention, the "final stage" refers to the last crystal rod produced by the Czochralski single crystal pulling equipment before shutdown. The preset final stage rule is a rule used to determine the final stage in the Czochralski single crystal pulling process based on key parameters.

[0035] In this embodiment of the invention, the preset completion segment rule can include various types. For example, if the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit, then the current segment in the Czochralski single crystal pulling process is the completion segment. As another example, if the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, and the estimated yield per unit is within a preset yield per unit, then the segment after the next feeding in the Czochralski single crystal pulling process is the completion segment. Specifically, any applicable preset completion segment rule can be included, and this embodiment of the invention does not impose any limitations on it.

[0036] In this embodiment of the invention, after determining the completion segment, the completion segment parameters are stored in a database. Then, the completion segment parameters are retrieved from the database and sent to the Czochralski single crystal equipment, for example, to the programmable logic controller (PLC) of the Czochralski single crystal equipment. Simultaneously, the thermal field and material preparation departments are notified to prepare for furnace dismantling and material preparation. The process indicators, key parameters, and results obtained from different branches used to determine the completion segment are all recorded in the database. Completion segment reports and parameter reports are developed in the reporting system to facilitate user data verification, checking the accuracy of the completion segment determination, and allowing modification of parameter ranges in the parameter reports.

[0037] In an optional embodiment of the present invention, a specific implementation of determining the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit threshold, then the current segment in the Czochralski single crystal process is determined to be the completion segment.

[0038] The preset duration range, preset length threshold, and preset unit output threshold can be set as needed. For example, based on historical statistical data, appropriate preset duration range, preset length threshold, and preset unit output threshold can be set as needed. This embodiment of the invention does not impose any restrictions on this.

[0039] Running time within the preset range indicates that the Czochralski crystal pulling equipment is approaching its operational lifespan limited by components. For example, the upper limit of the preset range is determined based on the crucible's lifespan, while the lower limit is determined to avoid wasting the crucible's lifespan. A crystal rod length greater than the preset length threshold indicates that the crystal pulling process has reached the constant diameter stage and is relatively stable, without any abnormalities such as wire breakage. An estimated yield per unit greater than the preset yield per unit threshold indicates that the Czochralski crystal pulling equipment has reached its preset yield target since the start of this operation.

[0040] Under the condition that the above three conditions are met at the same time, determining the current segment in the Czochralski single crystal process as the completion segment is based on actual needs and determined according to real-time data. For a single Czochralski single crystal device, the accuracy is relatively high.

[0041] In an optional embodiment of the present invention, a specific implementation of determining the completion segment in the Czochralski single crystal process may further include: if the running time is higher than the upper limit of the preset time range, then the current segment in the Czochralski single crystal process is determined to be the completion segment.

[0042] Due to factors such as the lifespan of components in the Czochralski (CZ) single crystal growth equipment, the equipment needs to be shut down promptly when the running time exceeds the upper limit of the preset time range. Therefore, when the running time exceeds the upper limit of the preset time range, the current segment in the CZ single crystal growth process is determined as the completion segment.

[0043] Step 103: During the Czochralski single crystal pulling process in the final stage, control the Czochralski single crystal pulling equipment to shut down.

[0044] In this embodiment of the invention, the Czochralski crystal pulling equipment is not immediately shut down during the final stage of the single crystal pulling process. The control system of the Czochralski crystal pulling equipment will automatically shut down the equipment at an appropriate time. For example, the equipment will automatically shut down when the length of the single crystal in the final stage reaches a preset length. Another example is when the remaining raw material in the Czochralski crystal pulling equipment meets a preset remaining material range, in order to avoid wasting raw materials.

[0045] For example, after the completion segment parameters are written into the database, the parameters are read by the programmed automatic parameter distribution software and distributed to the PLC of the corresponding Czochralski single crystal equipment. The control system reads the PLC data and controls the Czochralski single crystal equipment to automatically stop the furnace when the current segment (i.e. the completion segment) is pulled to the point where the remaining material is within the set remaining material range.

[0046] According to embodiments of the present invention, by determining key parameters affecting the shutdown timing during the Czochralski single crystal pulling process, the key parameters include running time, current ingot length, and estimated yield per unit time. The running time is the running time of the Czochralski single crystal pulling equipment since the start of the current evacuation, the current ingot length is the current ingot length after the current feeding, and the estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal pulling equipment per unit time since the start of the current operation. Based on preset completion segment rules, the completion segment of the Czochralski single crystal pulling process is determined according to the key parameters. During the Czochralski single crystal pulling process in the completion segment, the Czochralski single crystal pulling equipment is shut down. This allows the key parameters affecting the shutdown timing, such as running time, current ingot length, and estimated yield per unit time, to be considered together, automatically predict the completion segment of the Czochralski single crystal pulling process and control the shutdown at an appropriate time. This solves the problem of difficult-to-control shutdown timing, improves the accuracy of shutdown timing determination, reduces manual workload, and avoids anomalies such as silicon leakage, substandard product quality, and excessively low overall furnace yield caused by inappropriate shutdown timing.

[0047] Reference Figure 2 The flowchart illustrates an embodiment of the furnace shutdown control method of the present invention, which may specifically include the following steps: Step 201: Obtain the system time, evacuation start time, length of the current crystal rod segment, length of the crystal rod and dislocation length of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient.

[0048] In this embodiment of the invention, the specific implementation of this step can be found in the description of the foregoing embodiments, and will not be repeated here.

[0049] Step 202: Calculate the running time and estimated yield per unit based on the system time, evacuation start time, the ingot length and dislocation length of the Czochralski single crystal equipment since this operation, and the preset length-weight conversion coefficient.

[0050] In this embodiment of the invention, the runtime is the difference between the system time and the evacuation start time. Subtracting the evacuation start time from the system time yields the runtime. The estimated yield per unit is the quotient of the total weight of the single crystal and the runtime. The total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor. The total length of the single crystal is the difference between the ingot length and the returned dislocation length. Subtracting the returned dislocation length from the ingot length yields the total length of the single crystal. Dividing the total length of the single crystal by the preset length-weight conversion factor yields the total weight of the single crystal. Dividing the total weight of the single crystal by the runtime yields the estimated yield per unit.

[0051] In this embodiment of the invention, steps 203, 204, and 205 can be performed selectively.

[0052] Step 203: If the running time is within the preset time range, the length of the current segment of the crystal rod is greater than the preset length threshold, the estimated yield per unit is greater than the preset yield per unit threshold, and the furnace shutdown concentration is less than the preset concentration threshold, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

[0053] In this embodiment of the invention, a key parameter also includes shutdown concentration, which characterizes the number of Czochralski (CJ) single-crystal pulling equipment that has been shut down within a preset time period. When managing multiple CJ single-crystal pulling equipment in a unified manner, the number of CJ single-crystal pulling equipment currently in a shutdown state and the shutdown time are recorded in real time. The number of CJ single-crystal pulling equipment that has been shut down within a preset time period prior to the current time is obtained from the database, thereby determining the shutdown concentration. The shutdown concentration can be directly represented by the number of CJ single-crystal pulling equipment that has been shut down within the preset time period, or by dividing the number of CJ single-crystal pulling equipment that has been shut down within the preset time period by the preset time period, or any other applicable form; this embodiment of the invention does not limit this.

[0054] In this embodiment of the invention, the preset concentration threshold is set according to actual needs, and this embodiment of the invention does not impose any restrictions on it. When all four conditions mentioned above are met simultaneously, the current segment in the Czochralski single crystal process is determined as the completed segment.

[0055] After a Czochralski (CJ) single crystal growth unit is shut down, staff need to perform a series of post-shutdown operations to restore it to a ready-to-operate state. Therefore, when the shutdown concentration is too high, staff are busy with previously shut-down CJ single crystal growth units, resulting in excessively long idle times after shutdown. Therefore, in addition to ensuring the running time is within a preset range, the length of the current crystal rod segment exceeds a preset length threshold, and the estimated output per unit exceeds a preset output threshold, a shutdown concentration check is added. This allows staff to handle CJ single crystal growth unit shutdowns promptly, making work arrangements more rational and improving overall efficiency.

[0056] Step 204: If the running time is within the preset time range, the length of the current crystal rod is greater than the preset length threshold, the estimated single output is greater than the preset single output threshold, the furnace shutdown concentration is not less than the preset concentration threshold, and the crystallization rate is greater than the preset crystallization rate threshold, then the segment after the refeeding in the Czochralski single crystal process is determined to be the completed segment.

[0057] In this embodiment of the invention, key parameters also include furnace shutdown concentration and crystallization rate. The crystallization rate is the quotient of the total weight of single crystals and the total amount of feed material in the Czochralski single crystal equipment during this operation. The total amount of feed material can be obtained from the control system, or it can be obtained from the sum of the initial charge and subsequent multiple charges.

[0058] In this embodiment of the invention, the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, and the estimated output per unit is greater than a preset output per unit threshold, but the shutdown concentration is not less than a preset concentration threshold. Therefore, it is inappropriate to directly determine the current segment as the completed segment. In such cases, a crystallization rate judgment is added. The preset crystallization rate threshold can be set as needed, for example, by combining historical statistical data and setting an appropriate preset crystallization rate threshold as needed. This embodiment of the invention does not impose any restrictions on this. When the crystallization rate is greater than the preset crystallization rate threshold, it indicates that the raw materials have been basically transformed into products, so it is necessary to add material again. The segment after the second material addition is designated as the completed segment, thereby avoiding the current segment being designated as the completed segment, resulting in excessively high shutdown concentration and preventing the problem of staff being unable to handle the situation in a timely manner after the Czochralski single crystal equipment is shut down.

[0059] Step 205: If the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, the estimated output per unit is greater than a preset output per unit, the furnace shutdown concentration is not less than a preset concentration threshold, the crystallization rate is not greater than a preset crystallization rate threshold, the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions, then the segment after the refeeding in the Czochralski single crystal process is determined to be the completed segment.

[0060] In this embodiment of the invention, key parameters also include furnace shutdown concentration, crystallization rate, yield, resistance of crystal rods, and oxygen and carbon content.

[0061] In this embodiment of the invention, the yield rate is the quotient of the finished products produced by the Czochralski single crystal equipment since the start of this operation and the total amount of raw materials fed in. For example, data such as yield rate, resistance, and oxygen and carbon content can be directly obtained from the MES (Manufacturing Execution System) of the Czochralski single crystal equipment.

[0062] In this embodiment of the invention, the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, and the estimated output per unit is greater than a preset output per unit threshold, but the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is not greater than a preset crystallization rate threshold. In this case, it is also necessary to add judgments on the yield, the resistance of the crystal rod, and the oxygen and carbon content. The preset yield threshold can be set as needed, for example, by combining historical statistical data and setting an appropriate preset yield threshold as needed. This embodiment of the invention does not limit this. Preset conditions can be set as needed, for example, by combining historical statistical data and setting appropriate preset conditions as needed. This embodiment of the invention does not limit this.

[0063] In this embodiment of the invention, when the yield rate is greater than a preset yield rate threshold, and the resistance and oxygen / carbon content of the crystal rod meet preset conditions, it indicates that if the Czochralski single crystal equipment continues to operate for an extended period, the produced products will not meet the requirements, and the furnace needs to be shut down as soon as possible. Therefore, the section after the refeeding is designated as the termination section, thus avoiding the current section as the termination section. This prevents excessively concentrated furnace shutdowns, avoids the problem of staff being unable to handle the situation promptly after the Czochralski single crystal equipment is shut down, and ensures that the produced products still meet the requirements.

[0064] For example, such as Figure 3 The diagram illustrates the process for determining the final stage. Data sources for extraction can include parsed data, furnace-wide data, data engines, and MES (Manufacturing Execution System) data. The extracted data undergoes preprocessing to obtain runtime, estimated unit output, ingot length for this stage, crystallization rate, and yield. Based on this data and pre-defined final stage rules, results are determined for the final stage, the stage following further feeding, and stages where the final stage cannot be determined. For details, please refer to... Figure 4 The diagram illustrates the branching process for determining the final segment. When the Czochralski single crystal equipment is in the initial state (i.e., no abnormalities such as wire breakage have occurred), if the running length is greater than parameter 1, the current segment is determined as the final segment. If parameter 2 is less than the running length and less than or equal to parameter 1, and the length of the crystal rod in this segment is greater than parameter 3, the estimated single-unit output is greater than parameter 4, and the shutdown concentration is less than parameter 5, then the current segment is determined as the final segment. However, if the shutdown concentration is greater than or equal to parameter 5, and the crystallization rate is greater than parameter 6, then the segment after reloading is determined as the final segment. However, if the crystallization rate is less than or equal to parameter 6, the yield is greater than parameter 7, and parameter 9 is greater than the resistance (greater than parameter 8), the oxygen content is greater than parameter 10, and the carbon content is greater than parameter 11, then the segment after reloading is determined as the final segment. If the current determination cannot determine the final segment, a new result must be determined based on the updated data and the preset final segment rules.

[0065] Step 206: During the Czochralski single crystal pulling process in the final stage, control the Czochralski single crystal pulling equipment to shut down.

[0066] In this embodiment of the invention, the specific implementation of this step can be found in the description of the foregoing embodiments, and will not be repeated here.

[0067] According to an embodiment of the present invention, by acquiring the system time, evacuation start time, current segment bar length, bar length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion coefficient, the running time and estimated yield per unit are calculated based on the system time, evacuation start time, bar length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and the preset length-weight conversion coefficient. If the running time is within a preset time range, the current segment bar length is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit, and the shutdown concentration is less than a preset concentration threshold, then the current segment in the Czochralski single crystal process is determined to be the completed segment. If the running time is within a preset time range, the current segment bar length is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit, the shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold, then the Czochralski single crystal process is determined to be complete. The segment after the second feeding in the Czochralski process is considered the completion segment. If the running time is within a preset time range, the length of the ingot in this segment is greater than a preset length threshold, the estimated output per unit is greater than a preset output per unit, the furnace shutdown concentration is not less than a preset concentration threshold, the crystallization rate is not greater than a preset crystallization rate threshold, the yield is greater than a preset yield per unit, and the resistance and oxygen / carbon content of the ingot meet preset conditions, then the segment after the second feeding in the Czochralski process is determined to be the completion segment. During the Czochralski process in this completion segment, the Czochralski equipment is shut down. This allows the system to automatically predict the completion segment in the Czochralski process based on key parameters affecting the shutdown timing, such as the running time, the length of the ingot in this segment, and the estimated output per unit, and to control the shutdown at the appropriate time. This solves the problem of difficult-to-control shutdown timing, improves the accuracy of shutdown timing determination, reduces manual workload, and avoids anomalies such as silicon leakage, substandard product quality, and excessively low furnace output caused by inappropriate shutdown timing.

[0068] It should be noted that, for the sake of simplicity, the method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions involved are not necessarily essential to the embodiments of the present invention.

[0069] Reference Figure 5 The diagram shows a structural block diagram of an embodiment of the furnace shutdown control device of the present invention, which may specifically include the following modules: The parameter determination module 301 is used to determine the key parameters affecting the shutdown timing during the Czochralski single crystal process. The key parameters include the running time, the length of the current crystal bar segment, and the estimated yield per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal bar segment is the current length of the crystal bar after the current feeding. The estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. The completion segment determination module 302 is used to determine the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters. The furnace shutdown control module 303 is used to control the furnace shutdown of the Czochralski single crystal pulling equipment during the Czochralski single crystal pulling process in the final stage.

[0070] Optionally, the parameter determination module includes: The data acquisition submodule is used to acquire system time, vacuum start time, length of the current crystal rod segment, length of the crystal rod and dislocation length of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient; The data calculation submodule is used to calculate the running time and estimated yield per unit based on the system time, the evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion factor; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length.

[0071] Optionally, the completion segment determination module includes: The first determining submodule is used to determine the current segment in the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit threshold.

[0072] Optionally, the key parameters also include shutdown concentration, which characterizes the number of Czochralski single crystal devices that shut down within a preset time period. The completion segment determination module includes: The second determining submodule is used to determine the current segment of the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit threshold, and the furnace shutdown concentration is less than a preset concentration threshold.

[0073] Optionally, the key parameters also include shutdown concentration and crystal formation rate. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period, and the crystal formation rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The completion segment determination module includes: The third determining submodule is used to determine the segment after the second feeding during the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated single output is greater than a preset single output threshold, the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold.

[0074] Optionally, the key parameters also include shutdown concentration, crystallization rate, yield, resistivity of the crystal rod, and oxygen and carbon content. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period. The crystallization rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The yield rate is the quotient of the finished products produced by the Czochralski single crystal machine during this operation and the total amount of raw materials fed into the machine. The completion segment determination module includes: The fourth determining submodule is used to determine the segment after the second feeding during the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, the estimated output per unit is greater than a preset output per unit, the furnace shutdown concentration is not less than a preset concentration threshold, the crystallization rate is not greater than a preset crystallization rate threshold, the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions.

[0075] Optionally, the device further includes: The determination module is used to determine the current segment of the Czochralski single crystal process as the completion segment if the running time is higher than the upper limit of the preset time range.

[0076] According to embodiments of the present invention, by determining key parameters affecting the shutdown timing during the Czochralski single crystal pulling process, the key parameters include running time, current ingot length, and estimated yield per unit time. The running time is the running time of the Czochralski single crystal pulling equipment since the start of the current evacuation, the current ingot length is the current ingot length after the current feeding, and the estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal pulling equipment per unit time since the start of the current operation. Based on preset completion segment rules, the completion segment of the Czochralski single crystal pulling process is determined according to the key parameters. During the Czochralski single crystal pulling process in the completion segment, the Czochralski single crystal pulling equipment is shut down. This allows the key parameters affecting the shutdown timing, such as running time, current ingot length, and estimated yield per unit time, to be considered together, automatically predict the completion segment of the Czochralski single crystal pulling process and control the shutdown at an appropriate time. This solves the problem of difficult-to-control shutdown timing, improves the accuracy of shutdown timing determination, reduces manual workload, and avoids anomalies such as silicon leakage, substandard product quality, and excessively low overall furnace yield caused by inappropriate shutdown timing.

[0077] As the device embodiment is basically similar to the method embodiment, the description is relatively simple, and relevant parts can be found in the description of the method embodiment.

[0078] Figure 6 This is a structural block diagram illustrating an electronic device 400 for shoulder-turn activation according to an exemplary embodiment. For example, the electronic device 400 may be a mobile phone, computer, digital broadcasting terminal, messaging device, game console, tablet device, medical device, fitness equipment, personal digital assistant, etc.

[0079] Reference Figure 6 The electronic device 400 may include one or more of the following components: processing component 402, memory 404, power supply component 406, multimedia component 408, audio component 410, input / output (I / O) interface 412, sensor component 414, and communication component 416.

[0080] Processing component 402 typically controls the overall operation of electronic device 400, such as operations associated with display, telephone calls, data communication, camera operation, and recording. Processing component 402 may include one or more processors 420 to execute instructions to complete all or part of the steps of the aforementioned shutdown control method. Furthermore, processing component 402 may include one or more modules to facilitate interaction between processing component 402 and other components. For example, processing component 402 may include a multimedia module to facilitate interaction between multimedia component 408 and processing component 402.

[0081] Memory 404 is configured to store various types of data to support the operation of electronic device 400. Examples of such data include instructions for any application or method operating on electronic device 400, contact data, phonebook data, messages, pictures, videos, etc. Memory 404 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0082] Power supply component 406 provides power to various components of electronic device 400. Power supply component 406 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 400.

[0083] Multimedia component 408 includes a screen that provides an output interface between the electronic device 400 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation. In some embodiments, multimedia component 408 includes a front-facing camera and / or a rear-facing camera. When the electronic device 400 is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera may receive external multimedia data. Each front-facing camera and rear-facing camera may be a fixed optical lens system or have focal length and optical zoom capabilities.

[0084] Audio component 410 is configured to output and / or input audio signals. For example, audio component 410 includes a microphone (MIC) configured to receive external audio signals when electronic device 400 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 404 or transmitted via communication component 416. In some embodiments, audio component 410 also includes a speaker for outputting audio signals.

[0085] I / O interface 412 provides an interface between processing component 402 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0086] Sensor assembly 414 includes one or more sensors for providing state assessments of various aspects of electronic device 400. For example, sensor assembly 414 may detect the on / off state of electronic device 400, the relative positioning of components such as the display and keypad of electronic device 400, changes in position of electronic device 400 or a component of electronic device 400, the presence or absence of user contact with electronic device 400, orientation or acceleration / deceleration of electronic device 400, and temperature changes of electronic device 400. Sensor assembly 414 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 414 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 414 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0087] Communication component 416 is configured to facilitate wired or wireless communication between electronic device 400 and other devices. Electronic device 400 can access wireless networks based on communication standards, such as WiFi, 2G, or 3G, or combinations thereof. In one exemplary embodiment, communication component 416 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 416 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0088] In an exemplary embodiment, the electronic device 400 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above-described furnace shutdown control method.

[0089] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 404 including instructions, which can be executed by a processor 420 of an electronic device 400 to complete the aforementioned shutdown control method. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0090] A non-transitory computer-readable storage medium, when instructions in the storage medium are executed by a terminal's processor, enables the terminal to execute a furnace shutdown control method, the method comprising: The key parameters affecting the shutdown timing during the Czochralski single crystal growth process are determined. These key parameters include the running time, the length of the current crystal rod segment, and the estimated yield per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal rod segment is the current length of the crystal rod after the current feeding. The estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. Based on the preset completion segment rules, the completion segment in the Czochralski single crystal process is determined according to the key parameters; During the Czochralski single crystal pulling process in the final stage, the Czochralski single crystal pulling equipment is shut down.

[0091] Optionally, the key parameters affecting the furnace shutdown timing during the Czochralski single crystal growth process include: The system time, evacuation start time, length of the current crystal rod segment, length of the crystal rod and length of the returned dislocation of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient are obtained. Based on the system time, evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion factor, the running time and estimated yield per unit are calculated; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length.

[0092] Optionally, determining the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

[0093] Optionally, the key parameters also include shutdown concentration, which characterizes the number of Czochralski single crystal devices that shut down within a preset time period. The step of determining the completion segment in the Czochralski single crystal process based on preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit, and the furnace shutdown concentration is less than a preset concentration threshold, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

[0094] Optionally, the key parameters also include shutdown concentration and crystal formation rate. The shutdown concentration represents the number of Czochralski single crystal machines that shut down within a preset time period, and the crystal formation rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal machine during this operation. The determination of the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated single output is greater than a preset single output threshold, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold, then the segment after the refeeding during the Czochralski single crystal process is determined to be the final segment.

[0095] Optionally, the key parameters also include shutdown concentration, crystallization rate, yield, resistivity of the crystal rod, and oxygen and carbon content. The shutdown concentration represents the number of Czochralski single crystal pulling machines shut down within a preset time period. The crystallization rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal pulling machine during this operation. The yield rate is the quotient of the finished products produced by the Czochralski single crystal pulling machine during this operation and the total amount of raw materials fed into the machine. The determination of the completion segment in the Czochralski single crystal pulling process based on preset completion segment rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated output per unit is greater than a preset output per unit, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystal formation rate is not greater than a preset crystal formation rate threshold, and the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions, then the segment after the refeeding in the Czochralski single crystal process is determined to be the completed segment.

[0096] Optionally, the method further includes: If the runtime exceeds the upper limit of the preset runtime range, then the current segment in the Czochralski single crystal pulling process is determined to be the completed segment.

[0097] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0098] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0099] Embodiments of the present invention are described with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0100] These computer program instructions may also be stored in a computer-readable storage medium capable of directing a computer or other programmable data processing terminal device to operate in a predictive manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0101] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0102] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0103] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0104] The above provides a detailed description of a shutdown control method and apparatus, an electronic device, and a readable storage medium provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A shutdown control method, characterized in that, include: The key parameters affecting the shutdown timing during the Czochralski single crystal growth process are determined. These key parameters include the running time, the length of the current crystal rod segment, and the estimated yield per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal rod segment is the current length of the crystal rod after the current feeding. The estimated yield per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. Based on the preset completion segment rules, the completion segment in the Czochralski single crystal process is determined according to the key parameters; During the Czochralski single crystal pulling process in the final stage, the Czochralski single crystal pulling equipment is shut down. The key parameters affecting the timing of furnace shutdown during the Czochralski single crystal growth process include: The system time, evacuation start time, length of the current crystal rod segment, length of the crystal rod and length of the returned dislocation of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient are obtained. Based on the system time, evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion factor, the running time and estimated yield per unit are calculated; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion factor, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length; The determination of the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

2. The method according to claim 1, characterized in that, The key parameters also include shutdown concentration, which represents the number of Czochralski single crystal machines that shut down within a preset time period. The determination of the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters includes: If the running time is within a preset time range, the length of the current crystal rod is greater than a preset length threshold, the estimated yield per unit is greater than a preset yield per unit, and the furnace shutdown concentration is less than a preset concentration threshold, then the current segment in the Czochralski single crystal process is determined to be the completed segment.

3. The method according to claim 1, characterized in that, The key parameters also include shutdown concentration and crystal formation rate. Shutdown concentration represents the number of Czochralski single crystal pulling machines that shut down within a preset time period. Crystal formation rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal pulling machine during this operation. The determination of the completion stage in the Czochralski single crystal pulling process based on preset completion stage rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated single output is greater than a preset single output threshold, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystallization rate is greater than a preset crystallization rate threshold, then the segment after the refeeding during the Czochralski single crystal process is determined to be the final segment.

4. The method according to claim 1, characterized in that, The key parameters also include shutdown concentration, crystallization rate, yield, resistivity of the crystal rod, and oxygen and carbon content. The shutdown concentration represents the number of Czochralski single crystal pulling machines shut down within a preset time period. The crystallization rate is the quotient of the total weight of single crystals and the total amount of raw materials fed into the Czochralski single crystal pulling machine during this operation. The yield rate is the quotient of the finished products produced by the Czochralski single crystal pulling machine during this operation and the total amount of raw materials fed into the machine. The determination of the completion segment in the Czochralski single crystal pulling process based on preset completion segment rules and the key parameters includes: If the running time is within a preset time range, and the length of the current crystal rod is greater than a preset length threshold, and the estimated output per unit is greater than a preset output per unit, and the furnace shutdown concentration is not less than a preset concentration threshold, and the crystal formation rate is not greater than a preset crystal formation rate threshold, and the yield is greater than a preset yield rate threshold, and the resistance and oxygen-carbon content of the crystal rod meet preset conditions, then the segment after the refeeding in the Czochralski single crystal process is determined to be the completed segment.

5. The method according to any one of claims 1, 3, and 4, characterized in that, The method further includes: If the runtime exceeds the upper limit of the preset runtime range, then the current segment in the Czochralski single crystal pulling process is determined to be the completed segment.

6. A shutdown control device, characterized in that, include: The parameter determination module is used to determine the key parameters affecting the shutdown timing during the Czochralski single crystal growth process. The key parameters include the running time, the length of the current crystal rod segment, and the estimated output per unit time. The running time is the running time of the Czochralski single crystal equipment since the start of the current evacuation. The length of the current crystal rod segment is the current length of the crystal rod after the current feeding. The estimated output per unit time is the estimated weight of single crystals produced by the Czochralski single crystal equipment per unit time since the start of this operation. The completion segment determination module is used to determine the completion segment in the Czochralski single crystal process based on the preset completion segment rules and the key parameters. A furnace shutdown control module is used to control the shutdown of the Czochralski single crystal pulling equipment during the Czochralski single crystal pulling process in the final stage. The parameter determination module includes: The data acquisition submodule is used to acquire system time, vacuum start time, length of the current crystal rod segment, length of the crystal rod and dislocation length of the Czochralski single crystal device since this operation, and preset length-weight conversion coefficient; The data calculation submodule is used to calculate the running time and estimated yield per unit based on the system time, the evacuation start time, the ingot length and returned dislocation length of the Czochralski single crystal equipment since the start of this operation, and a preset length-weight conversion coefficient; wherein, the running time is the difference between the system time and the evacuation start time, the estimated yield per unit is the quotient of the total weight of the single crystal and the running time, the total weight of the single crystal is the quotient of the total length of the single crystal and the preset length-weight conversion coefficient, and the total length of the single crystal is the difference between the ingot length and the returned dislocation length; The completion segment determination module includes: The first determining submodule is used to determine the current segment in the Czochralski single crystal process as the completed segment when the running time is within a preset time range, the length of the current segment of the crystal rod is greater than a preset length threshold, and the estimated yield per unit is greater than a preset yield per unit threshold.

7. An electronic device, characterized in that, It includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; A processor, when executing a program stored in memory, implements the method described in any one of claims 1-5.

8. A readable storage medium, characterized in that, When the instructions in the storage medium are executed by the processor of the electronic device, the electronic device is able to perform the method as described in any one of claims 1-5.

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