Method and apparatus for calculating transmission or reflection spectrum of semiconductor film layer

Abstract

The present disclosure relates to a semiconductor film layer transmission spectrum or reflection spectrum calculation method and device, determines attribute information of a semiconductor film layer and a wavelength of incident light, establishes an optical potential well based on a space where the incident light is located, a space where the semiconductor film layer is located and a space where emergent light after the incident light passes through the semiconductor film layer is located, and determines a spectrum equation according to the optical potential well and a Maxwell equation set, and then solves the spectrum equation according to the attribute information and the wavelength of the incident light to obtain an incident light transmission spectrum and / or an incident light reflection spectrum. The present disclosure establishes an optical potential well to obtain a physical model, and then obtains a spectrum equation based on the physical model to quickly and accurately solve a transmission spectrum and a reflection spectrum of the semiconductor film layer. The way of solving the transmission spectrum and the reflection spectrum is convenient, fast, flexible, efficient and the like.

Description

Technical Field

[0001] This disclosure relates to the field of optical analytical calculation, and in particular to a method and apparatus for calculating the transmission spectrum or reflection spectrum of a semiconductor film. Background Technology

[0002] One important application of semiconductor films in optics is spectral modulation. Spectral modulation refers to modulating the properties of light waves by changing the intensity, frequency, or phase of the light signal. This technology has wide applications in optical communication, optical sensing, and spectral analysis. In fiber optic communication systems, spectral modulation devices made of semiconductor films can be used to modulate the phase or frequency of light signals, thereby achieving modulation and demodulation. Furthermore, spectral modulation technology using semiconductor films is also used in optical sensors to achieve highly sensitive detection of environmental parameters (such as pressure, temperature, and chemical concentrations). In the field of spectral analysis, spectral modulation devices made of semiconductor films can be used to analyze and detect spectral information in samples. Calculating the transmission and reflection spectra of semiconductor films is crucial for their application in spectral modulation. Summary of the Invention

[0003] In view of this, this disclosure proposes a method and apparatus for calculating the transmission spectrum or reflection spectrum of semiconductor films, aiming to efficiently and accurately calculate the transmission spectrum and reflection spectrum of semiconductor films.

[0004] According to a first aspect of this disclosure, a method for calculating the transmission or reflection spectrum of a semiconductor film is provided, the method comprising:

[0005] Determine the properties of the semiconductor film and the wavelength of the incident light;

[0006] An optical potential well is established based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light is located after the incident light passes through the semiconductor film.

[0007] The spectral equation is determined based on the optical potential well and Maxwell's equations.

[0008] The spectral equation is solved based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum.

[0009] In one possible implementation, the attribute information includes the thickness of the semiconductor film and the refractive index of the material.

[0010] In one possible implementation, the spectral equation is: Where V(r) represents the optical potential energy at position r = (x, y, z), and the optical potential energy in the space where the incident light or the emitted light is located is -(n0-1)k. 2The optical potential energy in the space where the semiconductor film layer is located is -(n′-1)k 2 n0 is the refractive index of the space medium, n′ is the refractive index of the semiconductor film material, E(r) is the light wave, and k is the wave number.

[0011] In one possible implementation, solving the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum includes:

[0012] Calculate the general solution of the spectral equation in each space of the optical potential well based on the attribute information;

[0013] The unknown parameter values ​​included in each general solution are determined according to the preset boundary conditions, and the intensity of reflected light and emitted light are obtained.

[0014] The incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light.

[0015] The incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light.

[0016] In one possible implementation, the preset boundary condition is that the light wave and its corresponding derivative are continuous in each space of the optical potential well, and that the light wave and its corresponding derivative are also continuous at the boundary between any two spaces.

[0017] In one possible implementation, when the optical potential well is a three-dimensional optical potential well, the step of determining the unknown parameter values ​​included in each general solution according to preset boundary conditions to obtain the reflected light intensity and the emitted light intensity includes:

[0018] Project the general solution of each region onto a preset orthogonal basis to obtain a preset number of basis vector components;

[0019] Determine the unknown parameter values ​​of each basis vector component that satisfy the boundary conditions to obtain the corresponding reflected light intensity component and emitted light intensity component;

[0020] The intensity of reflected light is determined according to each of the reflected light intensity components, and the intensity of emitted light is determined according to each of the emitted light intensity components.

[0021] In one possible implementation, the incident light transmission spectrum is: The incident light reflection spectrum is n' is the refractive index of the semiconductor film material, h is the thickness of the semiconductor film, and k is the wavenumber of the incident light wave.

[0022] According to a second aspect of this disclosure, a semiconductor film transmission spectrum or reflection spectrum calculation device is provided, the device comprising:

[0023] The parameter determination module is used to determine the property information of the semiconductor film and the wavelength of the incident light;

[0024] The potential well determination module is used to establish an optical potential well based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light after the incident light passes through the semiconductor film is located.

[0025] An equation determination module is used to determine the spectral equation based on the optical potential well and Maxwell's equations.

[0026] The spectral determination module is used to solve the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or the incident light reflection spectrum.

[0027] In one possible implementation, the attribute information includes the thickness of the semiconductor film and the refractive index of the material.

[0028] In one possible implementation, the spectral equation is: Where V(r) represents the optical potential energy at position r = (x, y, z), and the optical potential energy in the space where the incident light or the emitted light is located is -(n0-1)k. 2 The optical potential energy in the space where the semiconductor film layer is located is -(n′-1)k 2 n0 is the refractive index of the space medium, n′ is the refractive index of the semiconductor film material, E(r) is the light wave, and k is the wave number.

[0029] In one possible implementation, the spectral determination module is further configured to:

[0030] Calculate the general solution of the spectral equation in each space of the optical potential well based on the attribute information;

[0031] The unknown parameter values ​​included in each general solution are determined according to the preset boundary conditions, and the intensity of reflected light and emitted light are obtained.

[0032] The incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light.

[0033] The incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light.

[0034] In one possible implementation, the preset boundary condition is that the light wave and its corresponding derivative are continuous in each space of the optical potential well, and that the light wave and its corresponding derivative are also continuous at the boundary between any two spaces.

[0035] In one possible implementation, when the optical potential well is a three-dimensional optical potential well, the spectral determination module is further configured to:

[0036] Project the general solution of each region onto a preset orthogonal basis to obtain a preset number of basis vector components;

[0037] Determine the unknown parameter values ​​of each basis vector component that satisfy the boundary conditions to obtain the corresponding reflected light intensity component and emitted light intensity component;

[0038] The intensity of reflected light is determined according to each of the reflected light intensity components, and the intensity of emitted light is determined according to each of the emitted light intensity components.

[0039] In one possible implementation, the incident light transmission spectrum is: The incident light reflection spectrum is n' is the refractive index of the semiconductor film material, h is the thickness of the semiconductor film, and k is the wavenumber of the incident light wave.

[0040] According to a third aspect of this disclosure, an electronic device is provided, comprising: a processor; and a memory for storing processor-executable instructions; wherein the processor is configured to implement the above-described method when executing instructions stored in the memory.

[0041] According to a fourth aspect of this disclosure, a non-volatile computer-readable storage medium is provided that stores computer program instructions thereon, wherein the computer program instructions, when executed by a processor, implement the above-described method.

[0042] According to a fifth aspect of this disclosure, a computer program product is provided, including computer-readable code or a non-volatile computer-readable storage medium carrying the computer-readable code, wherein when the computer-readable code is run in a processor of an electronic device, the processor in the electronic device performs the above-described method.

[0043] In this embodiment, the property information of the semiconductor film and the wavelength of the incident light are determined. An optical potential well is established based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light is located after the incident light passes through the semiconductor film. The spectral equation is determined according to the optical potential well and Maxwell's equations. Then, the spectral equation is solved according to the property information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum. This disclosure obtains a physical model by establishing an optical potential well, and then obtains the spectral equation based on the physical model to quickly and accurately solve for the transmission and reflection spectra of the semiconductor film. This method of solving for the transmission and reflection spectra is convenient, fast, flexible, and efficient.

[0044] Other features and aspects of this disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0045] The accompanying drawings, which are included in and form part of this specification, illustrate exemplary embodiments, features, and aspects of this disclosure together with the specification and serve to explain the principles of this disclosure.

[0046] Figure 1 A flowchart is shown illustrating a method for calculating the transmission or reflection spectrum of a semiconductor film according to an embodiment of the present disclosure;

[0047] Figure 2 A schematic diagram of an optical potential well according to an embodiment of the present disclosure is shown;

[0048] Figure 3 A schematic diagram of another optical potential well according to an embodiment of the present disclosure is shown;

[0049] Figure 4 A schematic diagram showing the transmission and reflection spectra of a different material according to an embodiment of the present disclosure;

[0050] Figure 5 A schematic diagram showing a transmission spectrum of different thicknesses according to an embodiment of the present disclosure;

[0051] Figure 6 A schematic diagram of a semiconductor film transmission spectrum or reflection spectrum calculation device according to an embodiment of the present disclosure is shown;

[0052] Figure 7 A schematic diagram of an electronic device according to an embodiment of the present disclosure is shown;

[0053] Figure 8 A schematic diagram of another electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0054] Various exemplary embodiments, features, and aspects of this disclosure will now be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote elements that have the same or similar functions. Although various aspects of the embodiments are shown in the drawings, they are not necessarily drawn to scale unless specifically indicated otherwise.

[0055] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments.

[0056] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.

[0057] The semiconductor film layer described in this disclosure refers to a material layer or layer composed of semiconductor materials, the thickness of which is typically between tens of nanometers and tens of micrometers.

[0058] The semiconductor film transmission or reflection spectrum calculation method of this disclosure can be executed by an electronic device such as a terminal device or a server. The terminal device can be any fixed or mobile terminal such as a user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, vehicle-mounted device, or wearable device. The server can be a single server or a server cluster consisting of multiple servers. Any electronic device can implement the semiconductor film transmission or reflection spectrum calculation method of this disclosure by having its processor call computer-readable instructions stored in its memory.

[0059] Figure 1 A flowchart illustrating a method for calculating the transmission or reflection spectrum of a semiconductor film according to an embodiment of this disclosure is shown. Figure 1 As shown, the method for calculating the transmission or reflection spectrum of a semiconductor film in this embodiment may include the following steps S10-S40.

[0060] Step S10: Determine the property information of the semiconductor film and the wavelength of the incident light.

[0061] In one possible implementation, the electronic device determines the property information of the semiconductor film layer for which the transmission and / or reflection spectra need to be calculated, as well as the wavelength of the incident light passing through the semiconductor film layer. The semiconductor film layer can be made of a transparent semiconductor such as silicon (Si) or gallium arsenide (GaAs). The property information of the semiconductor film layer can include any property that affects the calculation results of the transmission and reflection spectra, such as the thickness of the semiconductor film layer and the refractive index of the semiconductor film layer material. Furthermore, in this embodiment, the incident light can be considered as a single-frequency plane wave for physical modeling in the form of an electromagnetic wave. The electronic device predetermines the wavelength of the incident light and solves the equations based on the wavelength of the incident light and the physical modeling results to obtain the final transmission and reflection spectra.

[0062] The semiconductor film is preferably a flat semiconductor film with well-matched crystal lattice. The incident light is preferably a monochromatic or polychromatic plane wave.

[0063] Step S20: Establish an optical potential well based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light after the incident light passes through the semiconductor film is located.

[0064] In one possible implementation, after determining the semiconductor film and the incident light incident on its surface, the electronic device considers the semiconductor film and the medium on both sides of it as a potential well, and the incident light as an electromagnetic wave. A physical model based on the concept of an optical potential well is established, referencing the physical model of the electron potential well in quantum mechanics. This optical potential well includes three spaces: the space containing the incident light, the space containing the semiconductor film, and the space containing the outgoing light. The type of optical potential well obtained from the physical model differs depending on the angle of the incident light. When the incident light is perpendicular to the semiconductor film, since both the semiconductor film and the plane wave of the incident light are homogeneous in the horizontal direction (x, y), only the interaction between the plane wave and the semiconductor film in the vertical direction (z) needs to be considered, simplifying the optical potential well to a one-dimensional optical potential well. When the incident light is either perpendicular or not perpendicular to the semiconductor film, the geometric position of the semiconductor film and the direction of the incident light wave in space can freely vary in three-dimensional coordinates; that is, the incident light can be incident at an angle relative to the plane of the semiconductor film, resulting in a three-dimensional optical potential well.

[0065] The space containing the incident light is any uniform space capable of conducting electromagnetic waves (i.e., incident light), such as air, water, oil, etc.; the space containing the semiconductor film layer includes the film layer medium; the space containing the outgoing light after the incident light passes through the semiconductor film layer is any uniform space capable of conducting electromagnetic waves (i.e., outgoing light), such as air, water, oil, etc.; the space containing the outgoing light may or may not be the same as the space containing the incident light.

[0066] Figure 2 A schematic diagram of an optical potential well according to an embodiment of the present disclosure is shown. Figure 2 As shown, when the incident light is incident at a non-perpendicular angle to the plane of the semiconductor film, the plane wave of the semiconductor film and the incident light are inconsistent in both the horizontal and vertical directions. The plane wave interacts with the semiconductor film in all directions of the three-dimensional space. The optical potential well obtained by physical modeling based on the three spaces of the incident light, the semiconductor film, and the outgoing light is a three-dimensional optical potential well.

[0067] Figure 3 A schematic diagram of another optical potential well according to an embodiment of the present disclosure is shown. Figure 3 As shown, when the incident light is incident at a perpendicular angle to the plane of the semiconductor film, the plane wave of the semiconductor film and the incident light are consistent in all aspects in the horizontal direction and interact with the semiconductor film in the vertical direction. Therefore, the optical potential well obtained by physical modeling based on the three spaces of the incident light, the semiconductor film, and the outgoing light can be simplified to a one-dimensional optical potential well.

[0068] Step S30: Determine the spectral equation based on the optical potential well and Maxwell's equations.

[0069] In one possible implementation, after obtaining the optical potential well of the incident light through physical modeling, the electronic device modifies the Maxwell's equations based on the physical model of the optical response scenario of the film layer to be solved, according to the basic Maxwell's equations, to obtain spectral equations for determining the incident light reflection and transmission spectra. Optionally, the spectral equations obtained by modifying the Maxwell's equations based on the optical potential well in this embodiment of the present disclosure can be: Where V(r) represents the optical potential energy at position r = (x, y, z), and the optical potential energy in the space where the incident or emitted light is located is -(n0-1)k. 2 The optical potential energy in the space where the semiconductor film is located is -(n′-1)k 2 n0 is the refractive index of the space medium, n′ is the refractive index of the semiconductor film material, E(r) is the light wave, and k is the wave number, which can be determined according to the wavelength of the incident light. The refractive index of the space medium can be the refractive index of the space medium in which the incident light is located, such as air, water, or oil. When the space medium is air, n0 represents the refractive index of air, and the refractive index of air is n0 = 1.

[0070] Alternatively, known sets of Maxwell's equations include:

[0071]

[0072]

[0073]

[0074]

[0075] Based on Maxwell's equations, we can obtain... Since the optical potential well scene obtained by physical modeling in this embodiment does not contain charge or current sources, the current density J = 0 and the charge density ρ = 0 in the formula, thus we can obtain and Further derivation yields

[0076] Furthermore, in solving the physical model, the embodiments of this disclosure treat the incident light as a single-frequency plane wave passing through the optical potential well. That is, the entire spectral solution process is decomposed into solving for the transmittance and reflectance of the incident light at a single frequency. By changing the frequency parameter, the transmission and reflection of light at all desired frequencies can be obtained, i.e., the transmission spectrum and reflection spectrum are obtained. The single-frequency plane wave can be written as E = E(r)e-iωt Substituting these values ​​into the final derived equation, we can obtain... Further, based on the definition of refractive index, it can be converted to Where n is the refractive index, and when both sides of the semiconductor film are air, n0 represents the refractive index of air (value 1), and n′ represents the refractive index of the semiconductor film material, i.e. I, II, and III represent three regions within the optical potential well, corresponding to the air region above the semiconductor film, the region containing the semiconductor film, and the air region below the semiconductor film, respectively. By treating the semiconductor film as a one-dimensional optical potential well in the physical model, the equations can be further transformed to obtain the spectral equation. Where V(z) represents the optical potential energy at position z, which can be expressed by the formula... It is confirmed that n0 is the refractive index of the space medium and n' is the refractive index of the semiconductor film material.

[0077] Step S40: Solve the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum.

[0078] In one possible implementation, the electronic device obtains an optical potential well through physical modeling, and after adjusting Maxwell's equations based on the optical potential well to obtain spectral equations for solving the transmission and reflection spectra, it solves the spectral equations according to the predetermined property information of the semiconductor film and the wavelength of the incident light passing through the semiconductor film, thus obtaining the incident light transmission and reflection spectra. Specifically, the calculation process can involve first calculating the general solution of the spectral equation in each space of the optical potential well based on the property information, then determining the unknown parameter values ​​included in each general solution according to preset boundary conditions, obtaining the intensity of the reflected light and the intensity of the emitted light. Then, the incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light, and the incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light. The preset boundary conditions can be determined based on the characteristics of the constructed optical physical model; for example, the light wave and its corresponding derivative can be continuous in each space of the optical potential well, and also continuous at the boundary between any two spaces.

[0079] Because the interaction between incident light and the semiconductor film differs in one-dimensional and three-dimensional optical potential wells, the general solution calculated by the electronic device differs for different optical potential wells. Specifically, for a one-dimensional optical potential well where the incident light is perpendicular to the semiconductor film, the electronic device does not need to consider the horizontal component of the incident light and directly calculates the general solution of the spectral equation in the space I containing the incident light. The general solution in the space Ιi where the semiconductor film layer is located is: The general solution for the space ⅢⅢ where the incident light passes through the semiconductor film is is: This includes three unknown parameters: f1, f2, and t; n0 is the refractive index of the spatial medium; n′ is the refractive index of the semiconductor film material; z is the position in the optical potential well; and k is the wavenumber determined based on the wavelength of the incident light. For three-dimensional optical potential wells where the incident light is either perpendicular or non-perpendicular to the semiconductor film, the electronic device needs to consider both the horizontal and vertical components of the incident light. The general solution of the spectral equation in the space I containing the incident light is directly calculated as follows: The general solution in the space Ιi where the semiconductor film layer is located is:

[0080] The general solution for the space ⅢⅢ where the incident light passes through the semiconductor film is is: Where i and j represent the order of the basis vector components of the expression, and their values ​​are integers, i.e., i,j = ..., -2, -1, 0, 1, 2, ...

[0081] …,-1,0,1,…), 'a' represents the side length of the square region to be calculated, and can be any preset positive value. When the spatial medium is air,

[0082]

[0083] After determining the general solution of the spectral equation corresponding to the optical potential well, for different types of optical potential wells, the electronic device can determine the unknown parameter values ​​included in each general solution in different ways based on preset boundary conditions, and obtain the intensity of reflected light and emitted light.

[0084] Optionally, for a one-dimensional optical potential well where the incident light is perpendicular to the semiconductor film, E can be determined based on the continuity boundary condition. Ι (z=0)=E ΙΙ (z=0), E ΙΙ (z=h)=E ΙΙΙ (z=h), h represents the thickness of the semiconductor film. Combining the continuity boundary conditions and the three general solutions corresponding to the spectral equation, when the space medium is air, the parameter solution formula can be obtained:

[0085]

[0086] In addition to the three unknown parameters f1, f2, and t, the unknown parameter r is also included. The value of the unknown parameter can be obtained by solving the parameter solution formula:

[0087]

[0088] Furthermore, based on the solved unknown parameter values, the intensity r of the reflected light can be calculated. 2 and emitted light intensity t 2 .

[0089] For a three-dimensional optical potential well where the incident light is either perpendicular or non-perpendicular to the semiconductor film, the electronic device can project the general solution of each region onto a preset orthonormal basis to obtain a preset number of basis vector components. Then, the unknown parameter values ​​satisfying the boundary conditions for each basis vector component are determined, yielding the corresponding reflected light intensity component and emitted light intensity component. Finally, the reflected light intensity is determined based on each reflected light intensity component, and the emitted light intensity is determined based on each emitted light intensity component. Here, based on the continuity boundary condition, E... Ι (z=0)=E ΙΙ (z=0), E ΙΙ (z=h)=E ΙΙΙ (z=h), h represents the thickness of the semiconductor film.

[0090] The electronic device first selects an orthogonal basis space ψ. p = ..., -1, 0, 1, ..., q = ..., -1, 0, 1, ... where the orthonormal basis space ψ is a multidimensional orthogonal space. p,q (x,y) represents the basis vector components of each dimension in the orthogonal basis vector space. Projecting each general solution of the three-dimensional optical potential well onto the space ψ, we obtain the expression for the general solution corresponding to each space in the optical potential well, which is given by its basis vector components ψ in all spaces. p,q Projection summation on:

[0091]

[0092]

[0093]

[0094] Combining the continuity boundary conditions and the three general solutions corresponding to the spectral equation, we can obtain the parameter solution formula:

[0095]

[0096]

[0097]

[0098]

[0099] Since the spatial basis vectors have an infinite number of unknown parameters, truncation is usually required. This involves selecting a finite number of important basis vector components for approximation, in order to further refine the results based on the reflected light intensity components of each dimension. and emitted light intensity component Determine the intensity of reflected light and emitted light intensity

[0100] For example, when the incident light is perpendicular to the plane of the film layer, the following basis vector ψ can be selected. p,q =ψ 0,0 ,ψ 0,1 ,ψ 1,0 ,ψ 1,1 ,ψ 0,-1 ,ψ -1,0 ,ψ -1,-1 The solution is then performed. The results show that, in the basis vector ψ... 0,1 ,ψ 1,0 ,ψ 1,1 ,ψ 0,-1 ,ψ -1,0 ,ψ -1,-1 In the case of solving the parameter r pq ,f pq ,g pq ,t pq All are 0, meaning that light waves have no energy component in these spatial basis vectors. In the basis vector ψ 0,0 In the case where p,q=0, when the space medium is air, the solution formula for the parameters can be obtained as follows:

[0101]

[0102] Because the basis vector components of the light wave incident perpendicularly satisfy k1 = 0, k2 = 0, k z =k, when the space medium is air, can be further obtained

[0103] Furthermore, for any type of optical potential well, after calculating its corresponding reflected and emitted light intensities, the electronic device can further calculate the incident light transmission spectrum and incident light reflection spectrum based on the reflection optics and emitted light intensities. The incident light transmission spectrum is... The incident light reflection spectrum is n' is the refractive index of the semiconductor film material, h is the thickness of the semiconductor film, and k is the wave number of the incident light wave, which can be calculated based on the wavelength of the incident light wave.

[0104] Figure 4 A schematic diagram showing the transmission and reflection spectra of a different material according to an embodiment of the present disclosure is provided. Figure 4As shown, for semiconductor films using Si and GaAs as materials, the transmission spectra calculated using the methods of this disclosure and the transmission spectra obtained through FDTD numerical simulation are consistent. Similarly, the reflection spectra calculated using the methods of this disclosure and the reflection spectra obtained through FDTD numerical simulation are also consistent.

[0105] Figure 5 A schematic diagram showing a transmission spectrum of different thicknesses according to an embodiment of the present disclosure is provided. Figure 5 As shown, for semiconductor films of the same material but different thicknesses, the transmission spectra of each thickness of the semiconductor film calculated using the calculation method of the present disclosure are consistent with the transmission spectra of the semiconductor film of the same thickness obtained by FDTD numerical simulation.

[0106] FDTD refers to the finite-difference time-domain method. The calculation method disclosed in this paper is an analytical solution method. Compared with numerical simulation, the analytical solution of this paper can provide formulas, which are more helpful for theoretical analysis of the physical principles behind the phenomena.

[0107] Based on the above technical features, the embodiments of this disclosure obtain a physical model by establishing an optical potential well, and obtain a spectral equation based on the physical model. Furthermore, the transmission and reflection spectra of semiconductor films of different materials and structures can be solved quickly and accurately by simply adjusting the parameters in the spectral equation. This method of solving the transmission and reflection spectra is convenient, fast, flexible and efficient. Compared with traditional numerical simulation methods, this model can quickly calculate the optical response results of the film, which greatly improves the computational efficiency.

[0108] Figure 6 A schematic diagram of a semiconductor film transmission or reflection spectrum calculation device according to an embodiment of the present disclosure is shown. Figure 6 As shown, the semiconductor film transmission spectrum or reflection spectrum calculation device according to embodiments of this disclosure may include:

[0109] The parameter determination module 60 is used to determine the property information of the semiconductor film and the wavelength of the incident light;

[0110] Potential well determination module 61 is used to establish an optical potential well based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light after the incident light passes through the semiconductor film is located.

[0111] Equation determination module 62 is used to determine the spectral equation based on the optical potential well and Maxwell's equations;

[0112] The spectrum determination module 63 is used to solve the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or the incident light reflection spectrum.

[0113] In one possible implementation, the attribute information includes the thickness of the semiconductor film and the refractive index of the material.

[0114] In one possible implementation, the spectral equation is: Where V(r) represents the optical potential energy at position r = (x, y, z), and the optical potential energy in the space where the incident light or the emitted light is located is -(n0-1)k. 2 The optical potential energy in the space where the semiconductor film layer is located is -(n′-1)k 2 n0 is the refractive index of the space medium, n′ is the refractive index of the semiconductor film material, E(r) is the light wave, and k is the wave number.

[0115] In one possible implementation, the spectral determination module 63 is further configured to:

[0116] Calculate the general solution of the spectral equation in each space of the optical potential well based on the attribute information;

[0117] The unknown parameter values ​​included in each general solution are determined according to the preset boundary conditions, and the intensity of reflected light and emitted light are obtained.

[0118] The incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light.

[0119] The incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light.

[0120] In one possible implementation, the preset boundary condition is that the light wave and its corresponding derivative are continuous in each space of the optical potential well, and that the light wave and its corresponding derivative are also continuous at the boundary between any two spaces.

[0121] In one possible implementation, when the optical potential well is a three-dimensional optical potential well, the spectral determination module 63 is further configured to:

[0122] Project the general solution of each region onto a preset orthogonal basis to obtain a preset number of basis vector components;

[0123] Determine the unknown parameter values ​​of each basis vector component that satisfy the boundary conditions to obtain the corresponding reflected light intensity component and emitted light intensity component;

[0124] The intensity of reflected light is determined according to each of the reflected light intensity components, and the intensity of emitted light is determined according to each of the emitted light intensity components.

[0125] In one possible implementation, the incident light transmission spectrum is: The incident light reflection spectrum is n' is the refractive index of the semiconductor film material, h is the thickness of the semiconductor film, and k is the wavenumber of the incident light wave.

[0126] The semiconductor film material needs to have a thickness between tens of nanometers and tens of micrometers, where μ is specifically given a numerical range, such as 10nm-100μm, for example, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 1μm, 5μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc.; the obtained semiconductor material has isotropic properties, and the refractive index of the film is a fixed value; exemplary semiconductor materials may include: crystalline silicon, including monocrystalline silicon or polycrystalline silicon, or gallium arsenide, etc.

[0127] In some embodiments, the functions or modules of the apparatus provided in this disclosure can be used to perform the methods described in the above method embodiments. The specific implementation can be referred to the description of the above method embodiments, and for the sake of brevity, it will not be repeated here.

[0128] This disclosure also proposes a computer-readable storage medium storing computer program instructions that, when executed by a processor, implement the above-described method. The computer-readable storage medium can be volatile or non-volatile.

[0129] This disclosure also proposes an electronic device, including: a processor; and a memory for storing processor-executable instructions; wherein the processor is configured to implement the above method when executing the instructions stored in the memory.

[0130] This disclosure also provides a computer program product, including computer-readable code, or a non-volatile computer-readable storage medium carrying computer-readable code, wherein when the computer-readable code is run in a processor of an electronic device, the processor in the electronic device performs the above-described method.

[0131] Figure 7 A schematic diagram of an electronic device 800 according to an embodiment of the present disclosure is shown. For example, the electronic device 800 may be a mobile phone, computer, digital broadcasting terminal, messaging device, game console, tablet device, medical device, fitness equipment, personal digital assistant, etc.

[0132] Reference Figure 7The electronic device 800 may include one or more of the following components: processing component 802, memory 804, power supply component 806, multimedia component 808, audio component 810, input / output interface 812 (I / O interface), sensor component 814, and communication component 816.

[0133] Processing component 802 typically controls the overall operation of electronic device 800, such as operations associated with display, telephone calls, data communication, camera operation, and recording operations. Processing component 802 may include one or more processors 820 to execute instructions to complete all or part of the steps of the methods described above. Furthermore, processing component 802 may include one or more modules to facilitate interaction between processing component 802 and other components. For example, processing component 802 may include a multimedia module to facilitate interaction between multimedia component 808 and processing component 802.

[0134] Memory 804 is configured to store various types of data to support the operation of electronic device 800. Examples of this data include instructions for any application or method operating on electronic device 800, contact data, phonebook data, messages, pictures, videos, etc. Memory 804 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0135] Power supply component 806 provides power to various components of electronic device 800. Power supply component 806 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 800.

[0136] Multimedia component 808 includes a screen that provides an output interface between the electronic device 800 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation. In some embodiments, multimedia component 808 includes a front-facing camera and / or a rear-facing camera. When the electronic device 800 is in an operating mode, such as a shooting mode or a video mode, the front-facing camera and / or the rear-facing camera may receive external multimedia data. Each front-facing camera and rear-facing camera may be a fixed optical lens system or have focal length and optical zoom capabilities.

[0137] Audio component 810 is configured to output and / or input audio signals. For example, audio component 810 includes a microphone (MIC) configured to receive external audio signals when electronic device 800 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 804 or transmitted via communication component 816. In some embodiments, audio component 810 also includes a speaker for outputting audio signals.

[0138] Input / output interface 812 provides an interface between processing component 802 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, start buttons, and lock buttons.

[0139] Sensor assembly 814 includes one or more sensors for providing state assessments of various aspects of electronic device 800. For example, sensor assembly 814 can detect the on / off state of electronic device 800, the relative positioning of components such as the display and keypad of electronic device 800, changes in position of electronic device 800 or a component of electronic device 800, the presence or absence of user contact with electronic device 800, orientation or acceleration / deceleration of electronic device 800, and temperature changes of electronic device 800. Sensor assembly 814 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 814 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 814 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0140] Communication component 816 is configured to facilitate wired or wireless communication between electronic device 800 and other devices. Electronic device 800 can access wireless networks based on communication standards, such as WiFi, 2G, or 3G, or combinations thereof. In one exemplary embodiment, communication component 816 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 816 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0141] In an exemplary embodiment, the electronic device 800 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the methods described above.

[0142] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as a memory 804 including computer program instructions that can be executed by a processor 820 of an electronic device 800 to perform the above-described method.

[0143] Figure 8 A schematic diagram of another electronic device 1900 according to an embodiment of the present disclosure is shown. For example, the electronic device 1900 may be provided as a server or a terminal device. (Refer to...) Figure 8 The electronic device 1900 includes a processing component 1922, which further includes one or more processors, and memory resources represented by memory 1932 for storing instructions, such as application programs, that can be executed by the processing component 1922. The application programs stored in memory 1932 may include one or more modules, each corresponding to a set of instructions. Furthermore, the processing component 1922 is configured to execute instructions to perform the methods described above.

[0144] Electronic device 1900 may also include a power supply component 1926 configured to perform power management of electronic device 1900, a wired or wireless network interface 1950 configured to connect electronic device 1900 to a network, and an input / output interface 1958 (I / O interface). Electronic device 1900 can operate on an operating system, such as Windows Server, stored in memory 1932. TM Mac OS X TM Unix TMLinux TM FreeBSD TM Or similar.

[0145] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as a memory 1932 including computer program instructions that can be executed by a processing component 1922 of an electronic device 1900 to perform the above-described method.

[0146] This disclosure can be a system, method, and / or computer program product. A computer program product may include a computer-readable storage medium having computer-readable program instructions loaded thereon for causing a processor to implement various aspects of this disclosure.

[0147] Computer-readable storage media can be tangible devices capable of holding and storing instructions for use by an instruction execution device. Computer-readable storage media can be, for example—but not limited to—electrical storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination thereof. More specific examples (a non-exhaustive list) of computer-readable storage media include: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disc read-only memory (CD-ROM), digital multifunction disc (DVD), memory sticks, floppy disks, mechanical encoding devices, such as punch cards or recessed protrusions storing instructions thereon, and any suitable combination thereof. The computer-readable storage media used herein are not to be construed as transient signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses through fiber optic cables), or electrical signals transmitted through wires.

[0148] The computer-readable program instructions described herein can be downloaded from computer-readable storage media to various computing / processing devices, or downloaded via a network, such as the Internet, local area network, wide area network, and / or wireless network, to an external computer or external storage device. The network may include copper transmission cables, fiber optic transmission, wireless transmission, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards them to the computer-readable storage media in the respective computing / processing device.

[0149] Computer program instructions used to perform the operations of this disclosure may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, status setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Smalltalk, C++, etc., and conventional procedural programming languages ​​such as the "C" language or similar programming languages. The computer-readable program instructions may execute entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving a remote computer, the remote computer may be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry, such as programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs), is personalized by utilizing the status information of the computer-readable program instructions to implement various aspects of this disclosure.

[0150] Various aspects of this disclosure are described herein with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer-readable program instructions.

[0151] These computer-readable program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing apparatus to produce a machine such that, when executed by the processor of the computer or other programmable data processing apparatus, they create means for implementing the functions / actions specified in one or more blocks of the flowchart and / or block diagram. These computer-readable program instructions can also be stored in a computer-readable storage medium that causes a computer, programmable data processing apparatus, and / or other device to operate in a particular manner; thus, the computer-readable medium storing the instructions comprises an article of manufacture that includes instructions for implementing aspects of the functions / actions specified in one or more blocks of the flowchart and / or block diagram.

[0152] Computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable data processing apparatus, or other device to produce a computer-implemented process, thereby causing the instructions executed on the computer, other programmable data processing apparatus, or other device to perform the functions / actions specified in one or more boxes of a flowchart and / or block diagram.

[0153] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of an instruction containing one or more executable instructions for implementing a specified logical function. In some alternative implementations, the functions marked in the blocks may occur in a different order than those shown in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0154] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or technical improvements to the embodiments in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A method for calculating the transmission or reflection spectrum of a semiconductor film, characterized in that, The method includes: Determine the properties of the semiconductor film and the wavelength of the incident light; An optical potential well is established based on the space where the incident light is located, the space where the semiconductor film is located, and the space where the outgoing light after the incident light passes through the semiconductor film. The optical potential well is a one-dimensional optical potential well when the incident light is perpendicular to the semiconductor film and a three-dimensional optical potential well when the incident light is not perpendicular to the semiconductor film. The spectral equation is determined based on the optical potential well and Maxwell's equations. The spectral equation is solved based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum. The step of solving the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or incident light reflection spectrum includes: Calculate the general solution of the spectral equation in each space of the optical potential well based on the attribute information; The unknown parameter values ​​included in each general solution are determined according to the preset boundary conditions, and the intensity of reflected light and emitted light are obtained. The incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light. The incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light.

2. The method according to claim 1, characterized in that, The attribute information includes the thickness of the semiconductor film and the refractive index of the material.

3. The method according to claim 1 or 2, characterized in that, The spectral equation is: ,in, Represents the position The optical potential energy at the location, in the space where the incident light or the emitted light is located, is the optical potential energy. The optical potential energy in the space where the semiconductor film layer is located is , It is the refractive index of the space medium. It is the refractive index of the semiconductor film material. Let k be the wave number of light.

4. The method according to claim 1, characterized in that, The preset boundary condition is that the light wave and its corresponding derivative are continuous in each space of the optical potential well, and the light wave and its corresponding derivative are also continuous at the boundary between any two spaces.

5. The method according to claim 4, characterized in that, When the optical potential well is a three-dimensional optical potential well, the step of determining the unknown parameter values ​​included in each general solution according to preset boundary conditions to obtain the intensity of reflected light and emitted light includes: Project the general solution of each region onto a preset orthogonal basis to obtain a preset number of basis vector components; Determine the unknown parameter values ​​of each basis vector component that satisfy the boundary conditions to obtain the corresponding reflected light intensity component and emitted light intensity component; The intensity of reflected light is determined according to each of the reflected light intensity components, and the intensity of emitted light is determined according to each of the emitted light intensity components.

6. The method according to claim 1 or 2, characterized in that, The incident light transmission spectrum is The incident light reflection spectrum is n' is the refractive index of the semiconductor film material, h is the thickness of the semiconductor film, and k is the wavenumber of the incident light wave.

7. A device for calculating the transmission or reflection spectrum of a semiconductor film, characterized in that, The device includes: The parameter determination module is used to determine the property information of the semiconductor film and the wavelength of the incident light; The potential well determination module is used to establish an optical potential well based on the space where the incident light is located, the space where the semiconductor film layer is located, and the space where the outgoing light after the incident light passes through the semiconductor film layer is located. The optical potential well is a one-dimensional optical potential well when the incident light is perpendicular to the semiconductor film layer, and a three-dimensional optical potential well when the incident light is not perpendicular to the semiconductor film layer. An equation determination module is used to determine the spectral equation based on the optical potential well and Maxwell's equations. The spectrum determination module is used to solve the spectral equation based on the attribute information and the wavelength of the incident light to obtain the incident light transmission spectrum and / or the incident light reflection spectrum. The spectral determination module is further configured to: Calculate the general solution of the spectral equation in each space of the optical potential well based on the attribute information; The unknown parameter values ​​included in each general solution are determined according to the preset boundary conditions, and the intensity of reflected light and emitted light are obtained. The incident light reflection spectrum is determined based on the intensity of the reflected light and the intensity of the incident light. The incident light transmission spectrum is determined based on the intensity of the emitted light and the intensity of the incident light.

8. An electronic device, characterized in that, include: processor; Memory used to store processor-executable instructions; The processor is configured to implement the method of any one of claims 1 to 6 when executing instructions stored in the memory.

9. A non-volatile computer-readable storage medium storing computer program instructions thereon, characterized in that, When the computer program instructions are executed by the processor, they implement the method described in any one of claims 1 to 6.

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