A driving circuit and control method, system of high-voltage silicon carbide power device

Abstract

The application discloses a kind of drive circuit and control method, system of high-voltage silicon carbide power device, containing energy storage unit, charging unit, self-energy unit, wireless communication unit, power supply enabling switch, power supply switching unit, energy storage unit is powered to wireless communication unit, and upper controller controls power supply enabling switch by wireless communication unit, so that energy storage unit first power supply drive circuit, after drive circuit works normally, self-energy unit obtains electric energy from the power loop of high-voltage silicon carbide power device, provides electric energy to energy storage unit by charging unit, and power supply switching unit selects energy storage unit or self-energy unit and powers drive circuit.The application does not need to obtain electric energy from system control circuit, auxiliary power supply circuit and system control circuit are not electrically connected, solve the problem that existing auxiliary power supply scheme needs high insulation isolation transformer, and significantly reduce common-mode current and electromagnetic interference risk, guarantee system safe and stable operation.

Description

Technical Field

[0001] This invention belongs to the field of power semiconductor device driving technology, specifically relating to a driving circuit and control method for a high-voltage silicon carbide power device. Background Technology

[0002] Traditional power grids are evolving towards new power systems characterized by the widespread application of power electronics technology. High-efficiency, high-power-density flexible power electronic devices at the megawatt level in medium and high voltage ranges are core equipment in these new power systems, placing high performance demands on high-voltage, high-power devices. However, currently commonly used power devices typically have a withstand voltage of 1200V / 1700V. When applied to medium and high voltage distribution networks above 10kV, multiple devices must be connected in series and parallel, along with an isolation transformer, to construct the power circuit of the flexible device. This results in existing medium and high voltage flexible devices suffering from high cost, low efficiency, large size, and poor reliability, increasing investment costs and operating losses in the distribution network and hindering the large-scale application of next-generation flexible device technology in distribution networks.

[0003] With advancements in high-voltage silicon carbide devices (such as SiC-MOSFETs or SiC-IGBTs) with withstand voltages exceeding 10kV, medium- and high-voltage flexible equipment has ushered in new development opportunities. The drive circuit is a crucial component for ensuring the safe and reliable operation of high-voltage silicon carbide power devices. When applied to medium- and high-voltage power conversion equipment, the drive circuit faces the following challenges: 1) The system operating voltage can reach over 10kV, requiring the isolation voltage withstand capability between the drive circuit and the equipment control circuit (such as a digital signal processor circuit) to be at least tens of kV; 2) The switching speed of high-voltage silicon carbide power devices can reach 100kV / µs, necessitating minimal parasitic capacitance to ground to reduce electromagnetic interference. Traditional drive circuit schemes for high-voltage silicon carbide devices are similar to those for conventional low-voltage devices, i.e., power is drawn from the equipment control circuit (low-voltage side) via an isolated auxiliary power supply to power the drive circuit. The aforementioned two challenges translate into increased pressure on the drive circuitry, requiring the isolation auxiliary power supply to achieve isolation voltage levels of tens of kV or higher on its primary side (low-voltage side of the system) and secondary side (high-voltage side of the system), with parasitic capacitance below 5 pF. Most existing isolation auxiliary power supply solutions employ high-frequency isolation transformers, making the design of isolation transformers for high-voltage silicon carbide power devices particularly difficult, significantly increasing the size and cost of the isolation transformer in practice. Furthermore, even the lowest parasitic capacitance achieved with existing isolation transformer technology is 2 pF between the primary and secondary sides. At a switching speed of 100 kV / µs, this generates a common-mode current amplitude of up to 0.2 A, which will produce extremely strong electromagnetic interference in the system's control circuitry. Since practical medium- and high-voltage power conversion equipment requires a large number of power devices, such strong electromagnetic interference will seriously threaten the safe and stable operation of the system. These shortcomings have become one of the main problems hindering the widespread application of high-voltage silicon carbide power devices. Summary of the Invention

[0004] The technical problem to be solved by this invention is: in order to significantly reduce common-mode current and system electromagnetic interference, and improve the safe and stable operation of medium and high voltage power conversion systems based on high voltage silicon carbide power devices, an auxiliary power supply solution that does not require a complex isolation transformer is provided.

[0005] The present invention employs the following technical solution to solve the proposed technical problem:

[0006] First, this invention proposes an auxiliary power supply circuit for a high-voltage silicon carbide power device drive circuit. This auxiliary power supply circuit includes an energy storage unit, a charging unit, a self-powered unit, a wireless communication unit, a power enable switch, and a power switching unit, wherein:

[0007] One end of the energy storage unit is connected to the wireless communication unit to provide power to the wireless communication unit, and the other end of the energy storage unit is connected to the first input terminal of the power supply switching unit through a power supply enable switch.

[0008] One end of the self-powered unit is connected to the power circuit of the high-voltage silicon carbide power device, and the other end is connected to the second input terminal of the charging unit and the power supply switching unit, respectively.

[0009] The power supply switching unit is connected to the high-voltage silicon carbide power device via a drive circuit.

[0010] The external upper-level controller controls the power supply enable switch to close via the wireless communication unit, so that the energy storage unit first supplies power to the drive circuit. After the drive circuit is working normally, the self-powered unit obtains power from the power circuit of the high-voltage silicon carbide power device and provides power to the energy storage unit through the charging unit. The power supply switching unit is used to select whether the energy storage unit or the self-powered unit supplies power to the drive circuit.

[0011] Furthermore, as a further optimization of the present invention, the high-voltage silicon carbide power device includes a metal-oxide-semiconductor field-effect transistor (MOSFET) or an insulated-gate bipolar transistor (IGBT); wherein for a MOSFET device, its power circuit refers to the path formed by the drain and the source; for an IGBT device, its power circuit refers to the path formed by the collector and the emitter.

[0012] When the high-voltage silicon carbide power device is a metal-oxide-semiconductor field-effect transistor (MOSFET), the self-powered unit includes a damping resistor, a DC blocking capacitor, a step-down transformer, a rectifier bridge, and a filter capacitor. The damping resistor, DC blocking capacitor, and the high-voltage winding of the step-down transformer are connected in series and then connected in parallel with the path DS formed by the drain and source of the MOSFET device. The low-voltage winding of the step-down transformer is connected to the rectifier bridge, and the filter capacitor is connected in parallel to the DC bus side of the rectifier bridge. The rectifier bridge is a half-wave rectifier, a full-bridge rectifier, or other rectifier circuit.

[0013] Specifically, the DC component in the DS path voltage is removed by a DC blocking capacitor and converted into a high-voltage, high-frequency rectangular wave voltage. Then, the high-voltage, high-frequency rectangular wave voltage is converted into a low-voltage, high-frequency rectangular wave voltage by a step-down transformer. Finally, the low-voltage, high-frequency rectangular wave voltage is converted into a low-voltage DC voltage by a rectifier bridge. A filter capacitor is used to smooth the DC voltage, and a damping resistor is used to prevent resonance between the capacitors and inductors on the line.

[0014] Furthermore, as a further optimization of the present invention, the power supply switching unit is composed of a diode, a P-channel low-voltage MOSFET, and a driving resistor. The voltage output terminal of the self-powered unit is connected to the anode of the diode, and the cathode of the diode is connected to the power supply voltage terminal of the driving circuit. The output terminal of the power supply enable switch is connected to the drain of the P-channel low-voltage MOSFET and then to the voltage input terminal of the driving circuit. The gate of the P-channel low-voltage MOSFET is connected to the output voltage terminal of the self-powered unit and one end of the driving resistor, respectively, and the other end of the driving resistor is grounded.

[0015] When the output voltage of the self-powered unit is greater than the output voltage generated by the energy storage unit through the power supply enable switch, the diode is turned on and the P-channel low-voltage MOSFET is turned off. At this time, the self-powered unit provides voltage to the drive circuit through the power supply switching unit. Conversely, when the output voltage of the self-powered unit is less than the output voltage of the energy storage unit, the diode is turned off and the P-channel low-voltage MOSFET is turned on. At this time, the energy storage unit provides voltage to the drive circuit through the power supply switching unit.

[0016] Meanwhile, this invention also proposes a control method for the auxiliary power supply circuit of a high-voltage silicon carbide power device drive circuit, comprising the following steps:

[0017] S1. The upper-level controller sends a control command through the wireless communication unit to close the power supply enable switch, and the energy storage unit provides power to the drive circuit of the high-voltage silicon carbide power device through the power supply switching unit.

[0018] S2. The self-powered unit obtains electrical energy from the power circuit of the high-voltage silicon carbide power device;

[0019] S3. The self-powered unit provides electrical energy to the energy storage unit through the charging unit;

[0020] S4. The power supply switching unit selects either the energy storage unit or the self-powered energy unit to supply power to the drive circuit. The selection method is as follows: if the output voltage of the self-powered energy unit is higher than the output voltage of the energy storage unit, then the self-powered energy unit is selected to supply power to the drive circuit; otherwise, the energy storage unit is selected to supply power to the drive circuit.

[0021] S5. When the high-voltage silicon carbide power device needs to stop switching, the upper-level controller sends a control command through the wireless communication unit to turn off the power supply enable switch, and both the energy storage unit and the self-powered unit stop supplying power to the drive circuit.

[0022] Secondly, the present invention also proposes an electronic system comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the method proposed in the present invention.

[0023] Finally, the present invention also proposes a computer-readable storage medium storing computer instructions for causing the computer to execute the method proposed in the present invention.

[0024] The present invention adopts the above technical solution, and has the following beneficial effects compared with the prior art:

[0025] First, the auxiliary power supply circuit scheme of the present invention has no electrical connection with the system's control circuit, which significantly reduces the parasitic capacitance on the low-voltage side and high-voltage side of the system, thereby significantly reducing the common-mode current and electromagnetic interference generated by the fast switching action of the high-voltage silicon carbide device on the control circuit, and improving the system's safe and stable operation capability.

[0026] Meanwhile, in this invention, the primary and secondary sides of the high-frequency transformer do not need to bear the entire system operating voltage, and the parasitic capacitance does not generate common-mode current. Therefore, a mature, low-cost, and compact transformer design can be adopted, which greatly reduces the design difficulty of the auxiliary power supply. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a block diagram of the auxiliary power supply circuit of the present invention.

[0029] Figure 2 This is the timing diagram for the auxiliary power supply circuit control of the present invention.

[0030] Figure 3 This is a structural diagram of the self-powered circuit of the present invention.

[0031] Figure 4 This is a circuit structure diagram of the power supply switching unit in this invention.

[0032] Figure 5 This is a simulation result of a specific embodiment of the present invention, wherein: (a) is the voltage waveform across the DS terminals of the MOSFET; (b) is the voltage waveform across the DC blocking capacitor; (c) is the primary voltage waveform of the high-frequency transformer; (d) is the secondary voltage waveform of the high-frequency transformer; and (e) is the output voltage V of the self-powered circuit. zo Waveform; (f) is the V generated by the power supply switching unit. sup Voltage waveform. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] This specific embodiment is based on an auxiliary power supply circuit and control method for a high-voltage silicon carbide power device drive circuit. It details the main components of the circuit and the main steps of the control method, along with the accompanying drawings and tables. The principle block diagram of the auxiliary power supply circuit for the high-voltage silicon carbide power device drive circuit is shown below. Figure 1 As shown, it includes an energy storage unit, a charging unit, a self-powered unit, a wireless communication unit, a power enable switch, and a power switching unit.

[0035] The functions and implementation methods of each unit are described below.

[0036] The primary function of the energy storage unit is to provide power to the wireless communication unit, enabling it to continuously monitor control commands from the higher-level controller. Another function is to provide power to the drive circuit when the output voltage of the self-harvesting unit is insufficient, maintaining the high-frequency switching operation of the high-voltage silicon carbide power device. The energy storage unit can utilize batteries or supercapacitors. The capacity of the energy storage unit depends mainly on the energy consumed by the drive circuit and its auxiliary power supply circuit when the high-voltage silicon carbide power device is not operating. According to the design of this invention, when the high-voltage silicon carbide power device is not operating, the power supply enable switch is turned off, and the energy storage unit only needs to provide power to the wireless communication unit. Therefore, the required capacity of the energy storage unit is mainly determined by the power consumption of the wireless communication unit. Since the wireless communication unit does not require high-frequency communication, a low-power wireless communication scheme (such as Bluetooth Low Energy) can be used to reduce the required capacity of the energy storage unit, thereby reducing its cost and size.

[0037] The wireless communication unit continuously listens for control commands from the upper-level controller. When the upper-level controller issues a running command, the wireless communication unit controls the power supply enable switch to close. For a short period after the power supply enable switch closes, the self-powered unit cannot yet obtain sufficient power from the power circuit of the high-voltage silicon carbide power device, resulting in a low output voltage. At this time, according to the function of the power supply switching unit, the energy storage unit continues to supply power to the drive circuit.

[0038] After the high-frequency switching of the high-voltage silicon carbide power device has lasted for a sufficiently long time, the self-powered unit obtains sufficient electrical energy from the power circuit of the high-voltage silicon carbide power device. High-voltage silicon carbide power devices are mainly divided into two categories: metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). This invention is also applicable to other high-voltage power devices. For MOSFET devices, the power circuit refers to the path formed by the drain (D) and source (S); for IGBT devices, the power circuit refers to the path formed by the collector (C) and emitter (E).

[0039] The following uses a MOSFET device as an example to illustrate the working principle of a self-powered circuit; the working principle of other devices such as IGBTs is similar. Under high-frequency switching operation, the DS voltage of the high-voltage silicon carbide MOSFET is a high-frequency chopped voltage from 0 to Vdc, where Vdc is the voltage stress experienced by the high-voltage silicon carbide MOSFET when it is turned off. To extract energy from the DS voltage, a... Figure 3 The circuit shown consists of a damping resistor R. d DC blocking capacitor C1, step-down transformer T, rectifier bridge D rec 1. Filter capacitor C2, where R d The high-voltage windings of C1 and T are connected in series and then in parallel with the DS path. The low-voltage winding of T is connected to the rectifier bridge D. recThe filter capacitor C2 is connected in parallel to the DC bus side of the rectifier bridge D. Its basic principle is that the DC component in the DS voltage is removed by the DC blocking capacitor C1, converting it into a high-voltage, high-frequency rectangular wave voltage. This is then converted into a low-voltage, high-frequency rectangular wave voltage by the step-down transformer T, and finally passed through the rectifier bridge D. rec Converted to low-voltage DC, the filter capacitor C2 smooths the DC voltage, and the damping resistor R... d Its function is to prevent resonance between capacitors and inductors in the circuit. The rectifier bridge D... rec It can be a half-wave rectifier, a full-bridge rectifier, or other rectifier circuits. For IGBT devices, the "DS voltage" mentioned above refers to the "CE voltage" formed by the collector C and emitter E of the IGBT. The composition and working principle of other circuits are the same as described above.

[0040] The self-powered unit draws power directly from the main power circuit of the power device, without needing to draw power from the low-voltage side of the control system. Therefore, the parasitic capacitance of the high-frequency transformer in this invention will not affect the control system, thus solving the problem of high-frequency common-mode current and large electromagnetic interference in existing isolated auxiliary power supply schemes.

[0041] After the self-powered circuit stabilizes, it can be used to charge the energy storage unit or power the drive circuit. Since the duty cycle of power devices in actual circuits may not be constant (e.g., in inverter applications), the voltage generated by the self-powered circuit may fluctuate. Therefore, a power supply switching unit is used to select either the energy storage unit or the self-powered unit to power the drive circuit. The basic principle is: if the output voltage of the self-powered unit is higher than that of the energy storage unit, the self-powered unit is selected to power the drive circuit; otherwise, the energy storage unit is selected. Furthermore, if the output voltage of the self-powered unit is lower than that of the energy storage unit, the charging unit also stops working. Figure 4 A circuit diagram of a power supply switching unit is given, consisting of diode D1, P-channel low-voltage MOSFET M1, and drive resistor R. g Composition, in which V zo V is the output voltage generated by the self-powered unit. bat1 V is the output voltage generated by the energy storage unit through the power enable switch. sup This refers to the final power supply voltage provided to the drive circuit by the circuit of this invention. V zo Through D1 and V sup The busbars are connected, and the anode of D1 is at V. zo Side. V bat1 Through M1 and V sup The busbars are connected, and the drain of M1 is at V. bat1 Side, V zo The gate G of M1 is connected to the gate of M1, and the gate G of M1 is simultaneously connected to the resistor R. g Grounding. When V zo >V bat1When diode D1 is turned on and M1 is turned off, the self-powered unit outputs voltage V. zo Provide V sup Voltage; conversely, diode D1 is cut off, M1 is turned on, and the voltage V generated by the energy storage unit at this time is... bat1 Provide V sup Voltage.

[0042] The following provides an example, system parameters, and system simulation results of this invention. Using a low-power wireless RF receiver module as the communication unit, with a standby power consumption ≤0.1mW, and a 12V 1Ah lithium battery as the energy storage unit, the auxiliary power supply circuit of this invention can operate in standby mode for 12*3600 / (0.1*0.001)=120000*3600 seconds=120000 hours=13.7 years, which can meet the needs of most power conversion circuits. The high-voltage silicon carbide power device used has a withstand voltage of 6500V. The 3000V high voltage is chopper-controlled with a sinusoidal duty cycle between 0-1 and a chopper frequency of 5kHz. Therefore, its DS voltage waveform is a 5kHz rectangular wave ranging from 0-3000V. The DC blocking capacitor used is 600pF, the damping resistor is 1kΩ, the turns ratio of the step-down transformer is 1500:13V, the secondary side of the step-down transformer adopts a full-bridge rectifier circuit, and the filter capacitor C2 is 220uF. Figure 5 The key waveforms of the high-voltage silicon carbide power device entering normal operation are given. After the device starts working, the output voltage V of the self-powered circuit is shown. zo Once it reaches a steady state, its voltage fluctuates between 8V and 15V. After employing a power supply switching circuit, the power supply voltage V of the drive circuit... sup It is always above 12V, so it can maintain continuous operation.

[0043] Example 2:

[0044] This embodiment proposes the auxiliary power supply circuit control method of the present invention, and the timing flowchart is as follows: Figure 2 As shown, it includes the following steps:

[0045] S1. The upper-level controller sends a control command through the wireless communication unit to close the power supply enable switch, and the energy storage unit provides power to the drive circuit of the high-voltage silicon carbide power device through the power supply switching unit.

[0046] S2. The self-powered unit obtains electrical energy from the power circuit of the high-voltage silicon carbide power device;

[0047] S3. The self-powered unit provides electrical energy to the energy storage unit through the charging unit;

[0048] S4. The power supply switching unit selects either the energy storage unit or the self-powered energy unit to supply power to the drive circuit. The selection method is as follows: if the output voltage of the self-powered energy unit is higher than the output voltage of the energy storage unit, then the self-powered energy unit is selected to supply power to the drive circuit; otherwise, the energy storage unit is selected to supply power to the drive circuit.

[0049] S5. When the high-voltage silicon carbide power device needs to stop switching, the upper-level controller sends a control command through the wireless communication unit to turn off the power supply enable switch, and both the energy storage unit and the self-powered unit stop supplying power to the drive circuit.

[0050] Example 3:

[0051] This embodiment proposes a computer-readable storage medium storing a computer program thereon. When the computer program is executed by a processor, it implements the steps of the method described in this invention, which will not be repeated here.

[0052] Example 4:

[0053] This embodiment also proposes an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor.

[0054] It should be noted that the processing flows of Embodiments 3 and 4 correspond to the specific steps of the method provided in Embodiment 2 of the present invention, and have the corresponding functional modules and beneficial effects of the method. Technical details not described in detail in this embodiment can be found in the method provided in the embodiments of the present invention.

[0055] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0056] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0057] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed invention.

Claims

1. A high-voltage silicon carbide power device drive circuit, characterized in that, The auxiliary power supply circuit of the drive circuit includes an energy storage unit, a charging unit, a self-powered unit, a wireless communication unit, a power enable switch, and a power switching unit, wherein: One end of the energy storage unit is connected to the wireless communication unit to provide power to the wireless communication unit, and the other end of the energy storage unit is connected to the first input terminal of the power supply switching unit through a power supply enable switch. One end of the self-powered unit is connected to the power circuit of the high-voltage silicon carbide power device, and the other end is connected to the second input terminal of the charging unit and the power supply switching unit, respectively. The power supply switching unit is connected to the high-voltage silicon carbide power device via a drive circuit. The external upper-level controller controls the power supply enable switch to close through the wireless communication unit, so that the energy storage unit first supplies power to the drive circuit. After the drive circuit works normally, the self-powered unit obtains power from the power circuit of the high-voltage silicon carbide power device and provides power to the energy storage unit through the charging unit. The power supply switching unit is used to select whether the energy storage unit or the self-powered unit supplies power to the drive circuit. High-voltage silicon carbide power devices include metal-oxide-semiconductor field-effect transistors (MOSFETs) or insulated-gate bipolar transistors (IGBTs). For MOSFET devices, the power circuit refers to the path formed by the drain and source. For IGBT devices, the power circuit refers to the path formed by the collector and emitter. The power supply switching unit consists of diodes ( D 1) P-channel low-voltage MOSFET ( M 1) Driving resistor ( R g It is composed of a self-powered unit and a diode ( D 1) Anode connection, diode ( D 1) The cathode is connected to the power supply voltage terminal of the drive circuit; the output terminal of the power supply enable switch is connected to the P-channel low-voltage MOSFET ( M 1) After the drain of the P-channel MOSFET is connected, it is connected to the voltage input terminal of the drive circuit. M 1) gate ( G ) respectively connected to the output voltage terminal of the self-powered unit ( V zo ) 、 Drive resistor ( R g One end of the drive resistor is connected to the drive resistor. R g The other end of the device is grounded; When the output voltage of the self-powered unit ( V zo > The output voltage generated by the energy storage unit through the power supply enable switch ( V bat1 When ), diode ( D 1) On, P-channel low-voltage MOSFET ( M 1) Cut off: At this time, the self-powered unit supplies voltage to the drive circuit through the power supply switching unit; conversely, the diode ( D 1) Cut-off, P-channel low-voltage MOSFET ( M 1) When the circuit is turned on, the energy storage unit provides voltage to the drive circuit through the power supply switching unit.

2. The high-voltage silicon carbide power device drive circuit according to claim 1, characterized in that, When the high-voltage silicon carbide power device is a metal-oxide-semiconductor field-effect transistor (MOSFET), the self-powered unit includes a damping resistor ( R d DC blocking capacitor () C 1) Step-down transformer ( T ), rectifier bridge ( D rec ), filter capacitor ( C 2); where the damping resistor ( R d DC blocking capacitor () C 1) With step-down transformer ( T The high-voltage winding of the transformer is connected in series and then in parallel with the path DS formed by the drain and source of the MOSFET device, forming a step-down transformer. T The low-voltage winding of the rectifier bridge is connected to the rectifier bridge. D rec ), filter capacitor ( C 2) Parallel connection to the rectifier bridge ( D rec DC bus side; Among them, through DC blocking capacitor ( C 1) Remove the DC component from the DS path voltage and convert it into a high-voltage, high-frequency rectangular wave voltage. Then, use a step-down transformer to convert the high-voltage, high-frequency rectangular wave voltage into a low-voltage, high-frequency rectangular wave voltage. Finally, use a rectifier bridge to convert the low-voltage, high-frequency rectangular wave voltage into a low-voltage DC voltage. (Filter capacitor...) C 2) Used to smooth DC voltage, damping resistor ( R d It is used to prevent the capacitors and inductors on the line from resonating.

3. The high-voltage silicon carbide power device drive circuit according to claim 2, characterized in that, rectifier bridge ( D rec () is a half-wave rectifier, a full-bridge rectifier, or other rectifier circuit.

4. A control method for a high-voltage silicon carbide power device drive circuit according to any one of claims 1-3, characterized in that, The control method includes the following steps: S1. The upper-level controller sends a control command through the wireless communication unit to close the power supply enable switch, and the energy storage unit provides power to the drive circuit of the high-voltage silicon carbide power device through the power supply switching unit. S2. The self-powered unit obtains electrical energy from the power circuit of the high-voltage silicon carbide power device; S3. The self-powered unit provides electrical energy to the energy storage unit through the charging unit; S4. The power supply switching unit selects either the energy storage unit or the self-powered unit to provide power to the drive circuit. S5. When the high-voltage silicon carbide power device needs to stop switching, the upper-level controller sends a control command through the wireless communication unit to turn off the power supply enable switch, and both the energy storage unit and the self-powered unit stop supplying power to the drive circuit.

5. The control method according to claim 4, characterized in that, The selection method for the power supply switching unit in step S4 is as follows: if the output voltage of the self-powered unit is higher than the output voltage of the energy storage unit, then the self-powered unit is selected to power the drive circuit; otherwise, the energy storage unit is selected to power the drive circuit.

6. An electronic system comprising: At least one processor; And a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, characterized in that the instructions are executed by the at least one processor to enable the at least one processor to perform the method according to any one of claims 4-5.

7. A computer-readable storage medium storing computer instructions, characterized in that, The computer instructions are used to cause the computer to perform the method described in any one of claims 4-5.

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