Mask preparation processing method and device in wet etching process of quartz structural member

Abstract

The application provides a mask preparation processing method and device in a quartz structure member wet etching process, and relates to the field of quartz device preparation. The method comprises the following steps: obtaining an etching angle characteristic parameter formed in a wet etching process of a quartz structure member based on an original mask layer; wherein the original mask layer corresponds to the quartz structure member; determining a compensation area corresponding to the original mask layer based on the etching angle characteristic parameter; and performing compensation processing on the original mask layer in a preparation process based on the compensation area corresponding to the original mask layer, so as to obtain a target mask layer. The quartz structure member wet etching process mask preparation processing method provided by the application can quickly and accurately compensate the original mask layer, so that the quartz structure member after etching can be effectively prevented from having a missing corner.

Description

Technical Field

[0001] This invention relates to the field of quartz device fabrication, specifically to a mask preparation method and apparatus for wet etching of quartz structural components. Additionally, it relates to an electronic device and a processor-readable storage medium. Background Technology

[0002] Quartz wet etching involves immersing quartz in a chemical etching solution. During etching, a chemical reaction occurs between the solution and the quartz surface, removing some or all of the material and forming a specific structure. It is characterized by high etching rate, poor anisotropy, high selectivity, and low cost, making it a frequently used method in the fabrication of micromechanical structures. The preparation of the mask layer is crucial to the final structure of the quartz component. Due to the anisotropy of quartz wet etching, compensation in the parallel direction is necessary when preparing the etching mask to ensure the etched structure meets design specifications. However, current methods for compensating in the parallel direction of the mask layer in most cut quartz components result in missing corners at fixed angles. These missing corners affect the symmetry of the quartz structure, thus impacting its performance. Summary of the Invention

[0003] Therefore, the present invention provides a mask preparation method and apparatus for the wet etching process of quartz structural components, so as to solve the defects of the existing mask preparation schemes in the wet etching process of quartz structural components, which have high limitations and result in poor mask layer preparation accuracy and efficiency.

[0004] In a first aspect, the present invention provides a mask preparation method for the wet etching process of quartz structural components, comprising:

[0005] Obtain corrosion angle characteristic parameters formed during wet etching of a quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure.

[0006] Based on the corrosion angle characteristic parameters, the compensation region corresponding to the original mask layer is determined;

[0007] Based on the compensation region corresponding to the original mask layer, the original mask layer is compensated during the preparation process to obtain the target mask layer.

[0008] Furthermore, before obtaining the corrosion angle characteristic parameters formed during the wet etching process of the quartz structure based on the original mask layer, the method further includes: pre-constructing the correspondence between the corrosion angle characteristic parameters of the quartz structure and the compensation area corresponding to the original mask layer; wherein, the corrosion angle characteristic parameters include the corrosion angle position and corrosion angle size, and the compensation area includes the compensation area position and compensation area.

[0009] The step of determining the compensation region corresponding to the original mask layer based on the corrosion angle feature parameters specifically includes: matching the corrosion angle position and corrosion angle size with the pre-constructed correspondence to obtain the target position and target area of ​​the compensation region corresponding to the original mask layer; and determining the compensation region corresponding to the original mask layer based on the target position and target area of ​​the compensation region.

[0010] Furthermore, the step of compensating the original mask layer during the fabrication process based on the compensation region corresponding to the original mask layer to obtain the target mask layer specifically includes: during the fabrication process, compensating the original mask layer based on the target position and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer.

[0011] Furthermore, the step of compensating the original mask layer based on the target location and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer specifically includes:

[0012] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to linear compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0013] Furthermore, the step of compensating the original mask layer based on the target location and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer specifically includes:

[0014] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to curve compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0015] Furthermore, the acquisition of corrosion angle characteristic parameters formed during the wet etching process of the quartz structure based on the original mask layer specifically includes:

[0016] During the wet etching process of a quartz structure based on the original mask layer, the spatial coordinate system corresponding to the quartz structure is determined; based on the position coordinates of the corrosion angle corresponding to the quartz structure in the spatial coordinate system, the position and size of the corrosion angle formed during the wet etching process of the quartz structure are determined.

[0017] Furthermore, determining the position and size of the corrosion angle formed during the wet etching process of the quartz structural component based on the position coordinates of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system specifically includes:

[0018] Obtain the abscissa and ordinate data of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system; based on the abscissa and ordinate data, locate the position of the corrosion angle formed during the wet corrosion process of the quartz structural component, and perform calculations on the abscissa and ordinate data to obtain the size of the corrosion angle formed during the wet corrosion process of the quartz structural component.

[0019] Secondly, the present invention also provides a mask preparation device for the wet etching process of quartz structural components, comprising:

[0020] The corrosion angle data acquisition unit is used to acquire corrosion angle characteristic parameters formed during the wet corrosion process of a quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure.

[0021] The compensation region determination unit is used to determine the compensation region corresponding to the original mask layer based on the corrosion angle feature parameters.

[0022] The compensation processing unit is used to perform compensation processing on the original mask layer during the preparation process based on the compensation region corresponding to the original mask layer, so as to obtain the target mask layer.

[0023] Furthermore, before obtaining the corrosion angle feature parameters formed during the wet etching process of the quartz structure based on the original mask layer, the method further includes: a correlation construction unit, used to pre-construct the correspondence between the corrosion angle feature parameters of the quartz structure and the compensation area corresponding to the original mask layer; wherein, the corrosion angle feature parameters include the corrosion angle position and corrosion angle size, and the compensation area includes the compensation area position and compensation area.

[0024] The compensation region determination unit is specifically used to: match the corrosion angle position and corrosion angle size with the pre-constructed correspondence to obtain the compensation region target position and compensation region target area corresponding to the original mask layer, and determine the compensation region corresponding to the original mask layer based on the compensation region target position and compensation region target area.

[0025] Furthermore, the step of compensating the original mask layer during the fabrication process based on the compensation region corresponding to the original mask layer to obtain the target mask layer specifically includes: during the fabrication process, compensating the original mask layer based on the target position and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer.

[0026] Furthermore, the compensation processing unit is specifically used for:

[0027] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to linear compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0028] Furthermore, the compensation processing unit is specifically used for:

[0029] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to curve compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0030] Furthermore, the corrosion angle data acquisition unit is specifically used for:

[0031] During the wet etching process of a quartz structure based on the original mask layer, the spatial coordinate system corresponding to the quartz structure is determined; based on the position coordinates of the corrosion angle corresponding to the quartz structure in the spatial coordinate system, the position and size of the corrosion angle formed during the wet etching process of the quartz structure are determined.

[0032] Furthermore, determining the position and size of the corrosion angle formed during the wet etching process of the quartz structural component based on the position coordinates of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system specifically includes:

[0033] Obtain the abscissa and ordinate data of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system; based on the abscissa and ordinate data, locate the position of the corrosion angle formed during the wet corrosion process of the quartz structural component, and perform calculations on the abscissa and ordinate data to obtain the size of the corrosion angle formed during the wet corrosion process of the quartz structural component.

[0034] Thirdly, the present invention also provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the mask preparation process in the wet etching process of quartz structural components as described in any of the above claims.

[0035] Fourthly, the present invention also provides a processor-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the mask preparation method in the wet etching process of quartz structural components as described in any of the preceding claims.

[0036] The mask preparation method for wet etching of quartz structural components provided by this invention obtains the corrosion angle characteristic parameters formed during the wet etching process of the quartz structural component based on the original mask layer, determines the compensation area corresponding to the original mask layer based on the corrosion angle characteristic parameters, and performs compensation processing on the original mask layer during the preparation process based on the compensation area corresponding to the original mask layer to obtain the target mask layer. This method can quickly and accurately compensate the original mask layer, thereby effectively avoiding corner defects in the quartz structural component after etching. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic flowchart of the mask preparation method in the wet etching process of quartz structural components provided in this embodiment of the invention;

[0039] Figure 2 This is a schematic diagram of the relative positions of the spatial coordinate system provided in the embodiments of the present invention;

[0040] Figure 3 This is one of the schematic diagrams of an actual quartz structure obtained by wet etching of a mask layer obtained under the existing compensation method, according to an embodiment of the present invention.

[0041] Figure 4 This is the second schematic diagram of an actual quartz structure obtained by wet etching of a mask layer obtained under the existing compensation method, as provided in the embodiments of the present invention.

[0042] Figure 5 This is a schematic diagram of the linear compensation method provided in the embodiments of the present invention;

[0043] Figure 6 This is a schematic diagram of the continuous linear compensation method provided in the embodiments of the present invention;

[0044] Figure 7 This is a schematic diagram of the curve compensation method provided in the embodiments of the present invention;

[0045] Figure 8 This is a schematic diagram of the mask preparation device in the wet etching process of quartz structural components provided in this embodiment of the invention;

[0046] Figure 9 This is a schematic diagram of the physical structure of the electronic device provided in an embodiment of the present invention. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] It should be noted that the terms "first," "second," etc., in the specification and accompanying drawings of this application are used to distinguish similar users and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0049] The following describes in detail the mask preparation method for the wet etching process of quartz structural components according to the present invention. For example... Figure 1 The diagram shown is a flowchart illustrating the mask preparation method during the wet etching process of quartz structural components according to an embodiment of the present invention. The specific process includes the following steps:

[0050] Step 101: Obtain the corrosion angle characteristic parameters formed during the wet etching process of the quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure.

[0051] In the wet etching process of quartz structural components based on the original mask layer, a structure such as... can be constructed first. Figure 2The spatial coordinate system corresponding to the quartz structural component is shown. The relative position of this spatial coordinate system is not specifically limited here. Based on the spatial coordinate system, the position coordinates of the corrosion angle corresponding to the quartz structural component can be determined. Then, based on the determined position coordinates, the position and size of the corrosion angle formed during the wet etching process of the quartz structural component are determined. Figure 2 The design drawings in the document correspond to the original design of the quartz structural components. Figure 3 The actual image with missing corners corresponds to the image based on Figure 4 The actual quartz structure with a first notch 301 and a second notch 302 is obtained after the mask layer 303 shown is wet etched.

[0052] For example, the abscissa and ordinate data of the corrosion angle corresponding to the quartz structure in the spatial coordinate system are obtained. Based on the abscissa and ordinate data, the position of the corrosion angle formed during the wet etching process of the quartz structure is located, and the abscissa and ordinate data are processed accordingly to obtain the size of the corrosion angle formed during the wet etching process of the quartz structure. The original mask layer, also called the mask assembly, corresponds to the shape and size of the quartz structure, and is larger in shape and size than the quartz structure. The original mask layer is used to protect the quartz structure from corrosion during the wet etching process.

[0053] In addition, the corrosion angle characteristic parameters can be calibrated through the pre-processing of the wet etching process on the quartz structure based on the original mask layer. This allows the corrosion angle characteristic parameters formed during the wet etching process on the quartz structure based on the original mask layer, which are determined through the pre-processing, to be obtained directly. For example, the user can directly input the corrosion angle characteristic parameters calibrated in the pre-processing process through the client.

[0054] Step 102: Based on the corrosion angle characteristic parameters, determine the compensation region corresponding to the original mask layer.

[0055] In this embodiment of the invention, before obtaining the corrosion angle characteristic parameters formed during the wet etching process of a quartz structure based on the original mask layer, the method further includes: pre-establishing a correspondence between the corrosion angle characteristic parameters of the quartz structure and the corresponding compensation area of ​​the original mask layer. The corrosion angle characteristic parameters include, but are not limited to, the corrosion angle position and size, and the compensation area includes, but is not limited to, the compensation area location and area. In addition, the corrosion angle characteristic parameters may also include the sheet cut type, sheet thickness, and etching solution type of the quartz structure, which are not specifically limited here. That is, in this embodiment of the invention, at the location where a corner is missing in the quartz structure, a compensation method can be derived by analyzing the sheet cut type, sheet thickness, etching solution type, corner location, and size to compensate for the mask pattern corresponding to the mask layer, thereby obtaining a result consistent with the design. Figure 1 The actual drawing corresponds to the quartz structural component required for production. The compensation method can be as follows: Figure 5 The linear compensation shown can also be as follows: Figure 6 The continuous linear compensation shown can also be as follows: Figure 7 The curve compensation is shown. The quartz structural component is a three-dimensional structural component, which can be of various cut shapes (such as Z0 cut). The quartz structural component sheet source can be of various thicknesses. Figure 5 The 304 in the image refers to the target mask layer obtained after linear compensation processing. The actual image obtained by wet etching of the quartz structure based on this target mask layer differs from the original design. Figure 1 There are no missing corners. Figure 6 305 in the diagram refers to the target mask layer obtained after continuous linear compensation processing. The actual drawing obtained by wet etching of the quartz structure based on this target mask layer differs from the original design. Figure 1 There are no missing corners. Figure 7 The 306 in the figure is the target mask layer obtained after curve compensation. The actual drawing obtained by wet etching of the quartz structure based on the target mask layer is consistent with the original design drawing and there are no missing corners.

[0056] The step of determining the compensation region corresponding to the original mask layer based on the corrosion angle feature parameters specifically includes: matching the corrosion angle position and corrosion angle size with the pre-constructed correspondence, obtaining the target position and target area of ​​the compensation region corresponding to the original mask layer according to the matching result, and determining the compensation region corresponding to the original mask layer based on the target position and target area of ​​the compensation region.

[0057] Step 103: Based on the compensation region corresponding to the original mask layer, the original mask layer is compensated during the preparation process to obtain the target mask layer.

[0058] In the mask layer preparation process of this invention embodiment, it is necessary to call a preset preparation device to perform compensation processing on the original mask layer according to the target position and target area of ​​the compensation region corresponding to the original mask layer, so as to obtain the compensated target mask layer.

[0059] Specifically, such as Figure 5 and 6 As shown, based on the target position and target area of ​​the compensation region corresponding to the original mask layer, a linear compensation process can be performed on the original mask layer to obtain the compensated target mask layer, so that the target mask layer effectively covers the quartz structure. In addition, as... Figure 7 As shown, the original mask layer can also be subjected to curve compensation processing based on the target position and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure. Figure 3 As shown, a quartz structural component cut at Z0, using the compensation method in the parallel direction, will form a missing corner at the intersection of the -x direction and the +y and -y directions after etching. That is, the left image shows no missing corner in the +x direction, while the right image shows a missing corner in the -x direction. The relationship between the compensation image and the actual image after etching is as follows: Figure 4 As shown in the figure. The compensation diagram corresponds to the mask layer after compensation using the prior art, while the actual diagram corresponds to the quartz structure obtained after wet etching based on the mask layer after compensation using the prior art.

[0060] The mask preparation method for wet etching of quartz structural components described in this invention obtains the corrosion angle characteristic parameters formed during the wet etching process of the quartz structural components based on the original mask layer. Based on the corrosion angle characteristic parameters, the compensation area corresponding to the original mask layer is determined. Based on the compensation area corresponding to the original mask layer, the original mask layer is compensated during the preparation process to obtain the target mask layer. This method can quickly and accurately compensate the original mask layer, thereby effectively avoiding corner defects in the quartz structural components after etching.

[0061] Corresponding to the mask preparation method for the wet etching process of quartz structural components provided above, this invention also provides a mask preparation apparatus for the wet etching process of quartz structural components. Since the embodiments of this apparatus are similar to the embodiments of the method described above, the description is relatively simple. For relevant details, please refer to the description in the method embodiment section above. The embodiments of the mask preparation apparatus for the wet etching process of quartz structural components described below are merely illustrative. Please refer to... Figure 8 As shown, it is a schematic diagram of a mask preparation device in the wet etching process of quartz structural components provided in an embodiment of the present invention.

[0062] The mask preparation device for the wet etching process of quartz structural components according to the present invention specifically includes the following parts:

[0063] The corrosion angle data acquisition unit 801 is used to acquire corrosion angle characteristic parameters formed during the wet corrosion process of a quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure.

[0064] The compensation region determination unit 802 is used to determine the compensation region corresponding to the original mask layer based on the corrosion angle characteristic parameters.

[0065] The compensation processing unit 803 is used to perform compensation processing on the original mask layer during the preparation process based on the compensation area corresponding to the original mask layer, so as to obtain the target mask layer.

[0066] Furthermore, before obtaining the corrosion angle feature parameters formed during the wet etching process of the quartz structure based on the original mask layer, the method further includes: a correlation construction unit, used to pre-construct the correspondence between the corrosion angle feature parameters of the quartz structure and the compensation area corresponding to the original mask layer; wherein, the corrosion angle feature parameters include the corrosion angle position and corrosion angle size, and the compensation area includes the compensation area position and compensation area.

[0067] The compensation region determination unit is specifically used to: match the corrosion angle position and corrosion angle size with the pre-constructed correspondence to obtain the compensation region target position and compensation region target area corresponding to the original mask layer, and determine the compensation region corresponding to the original mask layer based on the compensation region target position and compensation region target area.

[0068] Furthermore, the step of compensating the original mask layer during the fabrication process based on the compensation region corresponding to the original mask layer to obtain the target mask layer specifically includes: during the fabrication process, compensating the original mask layer based on the target position and target area of ​​the compensation region corresponding to the original mask layer to obtain the compensated target mask layer.

[0069] Furthermore, the compensation processing unit is specifically used for:

[0070] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to linear compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0071] Furthermore, the compensation processing unit is specifically used for:

[0072] Based on the target location and target area of ​​the compensation region corresponding to the original mask layer, the original mask layer is subjected to curve compensation processing to obtain the compensated target mask layer, so that the target mask layer can effectively cover the quartz structure.

[0073] Furthermore, the corrosion angle data acquisition unit is specifically used for:

[0074] During the wet etching process of a quartz structure based on the original mask layer, the spatial coordinate system corresponding to the quartz structure is determined; based on the position coordinates of the corrosion angle corresponding to the quartz structure in the spatial coordinate system, the position and size of the corrosion angle formed during the wet etching process of the quartz structure are determined.

[0075] Furthermore, determining the position and size of the corrosion angle formed during the wet etching process of the quartz structural component based on the position coordinates of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system specifically includes:

[0076] Obtain the abscissa and ordinate data of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system; based on the abscissa and ordinate data, locate the position of the corrosion angle formed during the wet corrosion process of the quartz structural component, and perform calculations on the abscissa and ordinate data to obtain the size of the corrosion angle formed during the wet corrosion process of the quartz structural component.

[0077] The mask preparation device for wet etching of quartz structural components described in this embodiment of the invention obtains the corrosion angle characteristic parameters formed during the wet etching process of the quartz structural components based on the original mask layer, determines the compensation area corresponding to the original mask layer based on the corrosion angle characteristic parameters, and performs compensation processing on the original mask layer during the preparation process based on the compensation area corresponding to the original mask layer to obtain the target mask layer. It can quickly and accurately compensate the original mask layer, thereby effectively avoiding corner defects in the quartz structural components after etching.

[0078] Corresponding to the mask preparation method in the wet etching process of quartz structural components provided above, this invention also provides an electronic device. Since the embodiment of this electronic device is similar to the method embodiment described above, it is described simply. For relevant details, please refer to the description in the method embodiment section above. The electronic device described below is merely illustrative. Figure 9The diagram shown is a schematic representation of the physical structure of an electronic device disclosed in an embodiment of the present invention. The electronic device may include a processor 901, a memory 902, and a communication bus 903. The processor 901 and the memory 902 communicate with each other via the communication bus 903 and communicate with external systems via a communication interface 904. The processor 901 can call logical instructions in the memory 902 to execute a mask preparation method during the wet etching process of a quartz structure. This method includes: acquiring corrosion angle characteristic parameters formed during the wet etching process of the quartz structure based on an original mask layer; wherein the original mask layer corresponds to the quartz structure; determining a compensation region corresponding to the original mask layer based on the corrosion angle characteristic parameters; and performing compensation processing on the original mask layer during the preparation process based on the compensation region corresponding to the original mask layer to obtain a target mask layer.

[0079] Furthermore, the logical instructions in the aforementioned memory 902 can be implemented as software functional units and, when sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, essentially, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes: memory chips, USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media capable of storing program code.

[0080] On the other hand, embodiments of the present invention also provide a computer program product, the computer program product including a computer program stored on a processor-readable storage medium, the computer program including program instructions, and when the program instructions are executed by a computer, the computer is able to execute the mask preparation method for the wet etching process of quartz structural parts provided in the above-described method embodiments. The method includes: obtaining corrosion angle characteristic parameters formed during the wet etching process of the quartz structural part based on an original mask layer; wherein the original mask layer corresponds to the quartz structural part; determining a compensation region corresponding to the original mask layer based on the corrosion angle characteristic parameters; and performing compensation processing on the original mask layer during the preparation process based on the compensation region corresponding to the original mask layer to obtain a target mask layer.

[0081] In another aspect, embodiments of the present invention also provide a processor-readable storage medium storing a computer program that, when executed by a processor, implements a mask preparation method for the wet etching process of quartz structural components provided in the above embodiments. The method includes: acquiring corrosion angle characteristic parameters formed during the wet etching process of a quartz structural component based on an original mask layer; wherein the original mask layer corresponds to the quartz structural component; determining a compensation region corresponding to the original mask layer based on the corrosion angle characteristic parameters; and performing compensation processing on the original mask layer during the preparation process based on the compensation region corresponding to the original mask layer to obtain a target mask layer.

[0082] The processor-readable storage medium can be any available medium or data storage device that the processor can access, including but not limited to magnetic memory (e.g., floppy disk, hard disk, magnetic tape, magneto-optical disk (MO)), optical memory (e.g., CD, DVD, BD, HVD), and semiconductor memory (e.g., ROM, EPROM, EEPROM, non-volatile memory (NAND FLASH), solid-state drive (SSD)).

[0083] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0084] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for mask preparation during the wet etching process of quartz structural components, characterized in that, include: Obtain corrosion angle characteristic parameters formed during wet etching of a quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure. Based on the corrosion angle characteristic parameters, the compensation region corresponding to the original mask layer is determined; Based on the compensation region corresponding to the original mask layer, the original mask layer is compensated during the preparation process to obtain the target mask layer; The acquisition of corrosion angle feature parameters includes: constructing a spatial coordinate system corresponding to the quartz structure, acquiring the corrosion angle position and corrosion angle size formed during the wet corrosion process of the quartz structure based on the spatial coordinate system, and using the corrosion angle position, corrosion angle size, as well as the sheet cutting type, sheet thickness and corrosion liquid type of the quartz structure as the corrosion angle feature parameters. Determining the compensation area and performing compensation processing includes: analyzing the corrosion angle characteristic parameters to derive a compensation method and determining the target location and target area of ​​the compensation area corresponding to the original mask layer; based on the target location and target area of ​​the compensation area, performing continuous linear or curved extensional compensation processing on the original mask layer so that the compensated target mask layer effectively covers the quartz structure, thereby obtaining a quartz structure consistent with the original design drawing after actual corrosion.

2. The mask preparation method for wet etching of quartz structural components according to claim 1, characterized in that, Before obtaining the corrosion angle feature parameters formed during the wet etching process of the quartz structure based on the original mask layer, the method further includes: pre-constructing the correspondence between the corrosion angle feature parameters of the quartz structure and the compensation area corresponding to the original mask layer; wherein, the corrosion angle feature parameters include the corrosion angle position and corrosion angle size, and the compensation area includes the compensation area position and compensation area. The step of determining the compensation region corresponding to the original mask layer based on the corrosion angle feature parameters specifically includes: matching the corrosion angle position and corrosion angle size with the pre-constructed correspondence to obtain the target position and target area of ​​the compensation region corresponding to the original mask layer; and determining the compensation region corresponding to the original mask layer based on the target position and target area of ​​the compensation region.

3. The mask preparation method for wet etching of quartz structural components according to claim 1, characterized in that, Based on the position coordinates of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system, the position and size of the corrosion angle formed during the wet etching process of the quartz structural component are determined, specifically including: Obtain the abscissa and ordinate data of the corrosion angle corresponding to the quartz structural component in the spatial coordinate system; based on the abscissa and ordinate data, locate the position of the corrosion angle formed during the wet corrosion process of the quartz structural component, and perform calculations on the abscissa and ordinate data to obtain the size of the corrosion angle formed during the wet corrosion process of the quartz structural component.

4. A mask preparation device for wet etching of quartz structural components, characterized in that, include: The corrosion angle data acquisition unit is used to acquire corrosion angle characteristic parameters formed during the wet corrosion process of a quartz structure based on the original mask layer; wherein the original mask layer corresponds to the quartz structure. The compensation region determination unit is used to determine the compensation region corresponding to the original mask layer based on the corrosion angle feature parameters. The compensation processing unit is used to perform compensation processing on the original mask layer during the preparation process based on the compensation area corresponding to the original mask layer, so as to obtain the target mask layer. The acquisition of corrosion angle feature parameters includes: constructing a spatial coordinate system corresponding to the quartz structure, acquiring the corrosion angle position and corrosion angle size formed during the wet corrosion process of the quartz structure based on the spatial coordinate system, and using the corrosion angle position, corrosion angle size, as well as the sheet cutting type, sheet thickness and corrosion liquid type of the quartz structure as the corrosion angle feature parameters. Determining the compensation area and performing compensation processing includes: analyzing the corrosion angle characteristic parameters to derive a compensation method and determining the target location and target area of ​​the compensation area corresponding to the original mask layer; based on the target location and target area of ​​the compensation area, performing continuous linear or curved extensional compensation processing on the original mask layer so that the compensated target mask layer effectively covers the quartz structure, thereby obtaining a quartz structure consistent with the original design drawing after actual corrosion.

5. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the mask preparation method in the wet etching process of quartz structural components as described in any one of claims 1 to 3.

6. A processor-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the computer program implements the steps of the mask preparation method in the wet etching process of quartz structural components as described in any one of claims 1 to 3.

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