一种用于探究熔点尺寸效应的原位芯片样品的制备方法
By processing the sample into an "Ω" shape and using a Pt protective layer in in-situ TEM testing, the problem of uneven adhesion between the TEM sample and the heating chip was solved, realizing a sample preparation method with uniform heating and precise angle, thus improving sample preparation efficiency and success rate.
CN117405715BActive Publication Date: 2026-07-17LANZHOU UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- LANZHOU UNIV
- Filing Date
- 2023-09-26
- Publication Date
- 2026-07-17
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Figure CN117405715B_ABST
Abstract
本发明公开了一种用于探究熔点尺寸效应的原位芯片样品制备方法，包括：1)利用聚焦离子束‑扫描双束电镜沉积厚度为0.5um的Pt保护层；2)用离子束削除Pt保护层周围的材料；3)用离子束将沉积Pt保护层的目标样品加工成特定形状；4)将特定形状的样品用机械手转移至Grid并用离子束精修；5)将载有精修目标样品的Grid取出后固定在和芯片同一平面的45°斜托；6)用机械手将Grid上的精修样品转移至加热芯片并固定；7)用离子束剪薄并用低电压清洗。本发明在不损伤芯片的前提下制备具有高分辨率、不同厚度的样品。样品最终与芯片平行贴合，受热均匀且保证样品不会因为转移过程中增加角度，操作过程简单易学，成功率也大大提升。
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