A method for measuring the synergistic effects of electromagnetic interference, total dose irradiation and single event effects on an analog-to-digital conversion circuit

Abstract

A kind of measurement method of electromagnetic interference, total dose irradiation and single particle effect synergistic effect of analog-digital conversion circuit, first, the sensitive point 1 of the analog-digital conversion circuit to be measured is recorded by separately doing heavy ion microbeam irradiation to the analog-digital conversion circuit to be measured;Then, the sensitive point 2 of the analog-digital conversion circuit to be measured is recorded by doing heavy ion microbeam irradiation after total dose irradiation and annealing to the analog-digital conversion circuit to be measured;Finally, the rule of single particle effect of the analog-digital conversion circuit to be measured influenced by electromagnetic interference and total dose irradiation is obtained by comparing the sensitive point 1 and the sensitive point 2 of the analog-digital conversion circuit to be measured;The present application fuses electromagnetic interference test, total dose irradiation test and heavy ion microbeam irradiation test, and is easy to implement.

Description

Technical Field

[0001] This invention relates to the field of nanoscale system-on-a-chip technology, specifically to a method for measuring the synergistic effects of electromagnetic interference, total dose irradiation, and single-event effects in analog-to-digital conversion circuits. Background Technology

[0002] Electronic systems of spacecraft operating in space are affected by high-energy particle incidents and interfered with by solar electromagnetic radiation. In particular, the powerful electromagnetic radiation generated during solar flares carries a large number of high-energy charged particles, which can have a serious impact on electronic systems in space and on the ground. In addition, high-altitude nuclear explosions produce instantaneous high-energy particles and rays, as well as instantaneous strong electromagnetic pulses. Even the ground atmosphere is filled with particles of different energies and is rich in electromagnetic interference of different frequencies. For example, during the operation of accelerators, high-energy particle beams are generated along with strong electromagnetic interference.

[0003] High-speed, high-precision analog-to-digital converters (A / D converters) are key components determining the performance of modern electronic systems. With the rapid development of modern electronic systems, like other critical technologies, there is constant pressure and impetus in the design and development of high-speed, high-precision A / D converters. Outer space is filled with various particles and rays, creating a harsh radiation environment. The farther away from Earth's surface, the more severe the radiation environment becomes. This can cause fatal damage to spacecraft, spaceships, and satellites performing missions in space. Such damage can range from temporary system failures to complete and irreparable damage. Analog integrated circuits, especially high-speed, high-precision A / D converters, are indispensable components integrated into system-on-a-chip (SoCs) in spacecraft. Their performance, quality, and reliability are key factors restricting the overall performance, reliability, stability, and long-term lifespan of spacecraft, weaponry, and other equipment.

[0004] In real-world environments where high-energy particles coexist with complex electromagnetic interference, the existing technology (Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip[J].IEEE Transactions on Nuclear Science, 2018, 65(1):545-549.DOI:10.1109 / TNS.2017.2776244.) accurately obtained the distribution information of single-event effect sensitive points in different modules of a 28nm process system chip by using heavy-ion microbeam irradiation testing. This study focuses on the evaluation of single-event effects of system chips under different conditions and has not yet addressed the influence of total dose irradiation and electromagnetic interference factors. Summary of the Invention

[0005] To overcome the shortcomings of the prior art, the present invention aims to provide a method for measuring the synergistic effects of electromagnetic interference, total dose irradiation, and single-event effects on analog-to-digital conversion circuits. This method can perform electromagnetic interference testing, irradiation testing, and electromagnetic radiation interference testing on analog-to-digital conversion circuits. The method is easy to implement and enables the measurement of the radiation resistance of analog-to-digital conversion circuits.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] A method for measuring the synergistic effects of electromagnetic interference, total dose radiation, and single-event effects in analog-to-digital conversion circuits includes the following steps:

[0008] Step 1: Irradiate the analog-to-digital converter circuit under test separately with heavy ion microbeams and record the sensitive point 1 of the circuit under test;

[0009] Step 2: Irradiate the analog-to-digital converter circuit under test with total dose and anneal it, and then perform heavy ion microbeam irradiation; while performing heavy ion microbeam irradiation, inject electromagnetic interference signals from the power supply and ground; after the heavy ion microbeam irradiation is completed, record the sensitive point 2 of the analog-to-digital converter circuit under test.

[0010] Step 3: By comparing sensitive point 1 and sensitive point 2 of the analog-to-digital converter circuit under test, the rules of single-event effect of the analog-to-digital converter circuit under test affected by electromagnetic interference and total dose irradiation are obtained.

[0011] Step 1 specifically involves:

[0012] 1.1) Divide the analog-to-digital converter circuit under test into several sensitive test areas, and select comparators, registers, and counters that are relatively sensitive to single-event effects for testing; based on the actual size of each module and with the origin as the reference point, construct a distribution map of sensitive points for micro-beam irradiation; sensitive points are areas with large differences in electrical parameters or functions caused by single-event effects, and finally obtain a distribution map of sensitive points for single-event effects.

[0013] 1.2) The analog-to-digital converter circuit under test was irradiated with heavy ion microbeams; the heavy ion microbeams were obtained by the pinhole collimation method and collimated twice.

[0014] Step 1.1) The parameters of the radiation sensitive point are DC and AC parameters, including IDD (dynamic current), ISB (static current), IIH (leakage current flowing into the device when the input pin is high), VOL1 (output low voltage), VOL2 (output low voltage), Thigh (high level time in the clock cycle), Tlow (low level time in the clock cycle), Tsu:dat (data signal setup time), Tsu:sta (start signal setup time), and Taa (data signal output delay time).

[0015] Step 1 is to obtain a stable heavy ion microbeam. First, a carbon film and microchannel plate detector are used to monitor the intensity of the heavy ion microbeam. Then, the heavy ion microbeam flux is monitored at different time periods, including before the entire test, before each block test, and after the entire test.

[0016] Step 2 specifically involves:

[0017] 2.1) Total dose irradiation using a 60Co γ source;

[0018] 2.2) After total dose irradiation, four annealing processes are performed simultaneously under the following four conditions: ① Annealing for 0 hours, followed by heavy ion microbeam irradiation; ② Annealing for 50 hours, followed by heavy ion microbeam irradiation; ③ Annealing for 100 hours, followed by heavy ion microbeam irradiation; ④ Annealing for 200 hours, followed by heavy ion microbeam irradiation. After heavy ion microbeam irradiation, single-event effect sensitive points of the analog-to-digital converter circuit under test are detected in different regions. The post-irradiation test must begin within 1 hour after the irradiation ends, and the test start time must be consistent under different conditions.

[0019] 2.3) While performing heavy ion microbeam irradiation after introducing the total dose effect, electromagnetic interference signals are injected from the circuit pins.

[0020] Step 2.3) The process is as follows:

[0021] 2.3.1) Lead out the power and ground pins of the test board with wires, and inject electromagnetic interference signals into the target pins of the analog-to-digital converter circuit under test using the direct power injection method;

[0022] 2.3.2) Apply electromagnetic interference signals of different frequencies to the analog-to-digital converter circuit under test. The frequency of the electromagnetic interference signals ranges from 50kHz to 3GHz. Set the adjustment step size of the electromagnetic interference signals in different frequency ranges: when the frequency range of the electromagnetic interference signals is 50kHz to 1MHz, the adjustment step size is set to 300kHz; when the frequency range of the electromagnetic interference signals is 1MHz to 10MHz, the adjustment step size is set to 3MHz; when the frequency range of the electromagnetic interference signals is 10MHz to 100MHz, the adjustment step size is set to 30MHz; when the frequency range of the electromagnetic interference signals is 100MHz to 1GHz, the adjustment step size is set to 300MHz; when the frequency range of the electromagnetic interference signals is 1GHz to 3GHz, the adjustment step size is set to 1GHz. Perform a power scan for each frequency point, with a starting power of -20dBm, a step size of 2dBm, and an upper limit power of 37dBm.

[0023] Step 2.3) The electromagnetic interference signal test framework includes a directional coupler. The first input of the directional coupler is connected to the output of the power amplifier and the signal generator. The second input of the directional coupler is connected to the output of the forward power and reverse power through the power meter. The forward power and reverse power are connected to the control center. The control center is connected to the test board. The power supply and ground pins of the analog-to-digital converter circuit under test on the test board are connected to the output of the directional coupler.

[0024] Compared with the prior art, the beneficial effects of the present invention are as follows: because the present invention uses a 60Co γ source for total dose irradiation to simulate the radiation accumulated by electronic components in space, and uses electromagnetic interference testing equipment to simulate the single-event effect of analog-to-digital conversion circuit under the influence of electromagnetic interference, the present invention truly simulates the performance of analog-to-digital conversion circuit in complex application environments.

[0025] This invention integrates electromagnetic interference testing, total dose irradiation testing, and heavy ion microbeam irradiation testing, which is easy to implement and can reveal the laws governing the influence of electromagnetic interference and total dose irradiation on the single-event effect of analog-to-digital conversion circuits. Attached Figure Description

[0026] Figure 1 This is a flowchart of the measurement method of the present invention.

[0027] Figure 2 This is a distribution diagram of sensitive points in different modules of the analog-to-digital converter circuit under test in an embodiment of the present invention.

[0028] Figure 3 This is a schematic diagram of the heavy ion irradiation test procedure that introduces the total dose effect in an embodiment of the present invention.

[0029] Figure 4 This is a schematic diagram of the electromagnetic interference signal testing framework according to an embodiment of the present invention. Detailed Implementation

[0030] The present invention will now be described in detail with reference to the embodiments and accompanying drawings.

[0031] like Figure 1 As shown, a method for measuring the synergistic effects of electromagnetic interference, total dose irradiation, and single-event effects in an analog-to-digital conversion circuit includes the following steps:

[0032] Step 1: Irradiate the analog-to-digital converter circuit under test separately with heavy ion microbeams and record the sensitive point 1 of the circuit under test;

[0033] Step 1 is as follows:

[0034] 1.1) Divide the analog-to-digital converter circuit under test into several sensitive test areas, rationally plan the test areas, and select comparators, registers, counters, and other modules that are relatively sensitive to single-event effects for testing; based on the actual size of each module and with the origin as the reference point, construct a distribution map of sensitive points for micro-beam irradiation; sensitive points are areas with large differences in electrical parameters or functions caused by single-event effects, and the greater the difference, the more sensitive the point is to single-event effects; finally, obtain the distribution map of sensitive points for single-event effects, such as... Figure 2 As shown, the different colored squares represent different modules in the analog-to-digital converter circuit under test. Radiation-sensitive point parameters include DC and AC parameters, such as: IDD (dynamic current), ISB (static current), IIH (leakage current flowing into the device when the input pin is high), VOL1 (output low voltage), VOL2 (output low voltage), Thigh (high level time in the clock cycle), Tlow (low level time in the clock cycle), Tsu:dat (data signal setup time), Tsu:sta (start signal setup time), Taa (data signal output delay time), etc. The main error types that can be obtained from the test are:

[0035] Data error: Errors in data calculation results or memory data caused by single-particle flip;

[0036] Function interruption: The test program was interrupted, but after a soft reset, the program returned to normal.

[0037] Runtime expired: The test program's runtime exceeded the time required for the program to run normally;

[0038] System stopped: The program has stopped, and a soft reset is ineffective. A power-off restart is required. This may be due to system crash caused by irradiation.

[0039] 1.2) Irradiate the analog-to-digital converter circuit under test with heavy ion microbeams;

[0040] In this embodiment, the heavy ion microbeam is obtained using the pinhole collimation method. To obtain a 30µm heavy ion microbeam spot, the heavy ion microbeam is collimated twice:

[0041] ① During the first pre-collimation, an aperture of 0.58 mm was used. This aperture was aligned with the heavy ions generated by the accelerator and transmitted to the microbeam end platform to initially restrict their movement.

[0042] ② The heavy ions passing through the first aperture are again confined by the second aperture with a diameter of 30 μm. The 30 μm aperture has two functions: one is to confine the 0.58 mm heavy ion micro-beam, and the other is to prevent scattering and secondary particles from the first aperture.

[0043] In order to obtain a stable heavy ion microbeam, the following measures are taken in this embodiment: First, a carbon film and a microchannel plate detector are used to monitor the intensity of the heavy ion microbeam; second, the heavy ion microbeam flux is monitored at different time periods, including before the entire test, before each block test, and after the entire test.

[0044] Step 2: Irradiate the analog-to-digital converter circuit under test with total dose and anneal it, and then perform heavy ion microbeam irradiation; while performing heavy ion microbeam irradiation, inject electromagnetic interference signals from the power supply and ground; after the heavy ion microbeam irradiation is completed, record the sensitive point 2 of the analog-to-digital converter circuit under test.

[0045] Step 2 is as follows:

[0046] 2.1) Total dose irradiation using a 60Co γ source; For electronic components in space, it takes years or even longer to reach the predetermined total dose. Considering factors such as time and funding, the current assessment of the total dose radiation capability of electronic components is conducted using high dose rate irradiation. Simply using high dose rate irradiation to reach the specified dose is insufficient. A total dose of 1Mrad(si) for ionizing radiation resistance cannot accurately assess the actual irradiation damage to the device. In order to eliminate the difference between high and low dose rate irradiation damage, it is necessary to reduce the oxide trap charge generated at high dose rates and increase the interface states. This difference can be eliminated by high-temperature annealing after irradiation.

[0047] 2.2) To more comprehensively evaluate the impact of total dose irradiation on single-event effects, four annealing processes were performed after total dose irradiation, with the following four scenarios occurring simultaneously: ① Annealing for 0 hours followed by heavy-ion microbeam irradiation; ② Annealing for 50 hours followed by heavy-ion microbeam irradiation; ③ Annealing for 100 hours followed by heavy-ion microbeam irradiation; ④ Annealing for 200 hours followed by heavy-ion microbeam irradiation. After heavy-ion microbeam irradiation, single-event effect sensitive points were detected in different regions of the analog-to-digital converter circuit under test. Post-irradiation testing must begin within 1 hour of the irradiation end, and the start time for testing under different scenarios must be consistent. Different annealing times result in different simulated actual time in space. The heavy-ion irradiation test flow incorporating the total dose effect is as follows: Figure 3 As shown, firstly, a certain dose rate is selected to evaluate the total dose radiation resistance capability, and the total dose of ionizing radiation resistance is selected as 1Mrad(si); then, the electrical parameter test code is run and irradiation is turned on. When the irradiation reaches the maximum total dose set by the specification, the electrical parameters are recorded, which is the irradiation test result; after that, four annealings are performed, and the four samples are annealed for 0 hours, 50 hours, 100 hours and 200 hours respectively; then step 2.3 is performed.

[0048] 2.3) While performing heavy ion microbeam irradiation after introducing the total dose effect, an electromagnetic interference signal is injected from the circuit pin. The electromagnetic interference signal test framework in this embodiment is as follows: Figure 4 As shown, the electromagnetic interference signal test framework includes a directional coupler. The first input of the directional coupler is connected to the output of a power amplifier and a signal generator. The second input of the directional coupler is connected to the outputs of a power meter and forward and reverse power signals. The forward and reverse power signals are connected to the control center. The control center is connected to the test board. The power and ground pins of the analog-to-digital converter circuit under test on the test board are connected to the outputs of the directional coupler. The process is as follows:

[0049] 2.3.1) Lead out the power and ground pins of the test board with wires, and inject electromagnetic interference signals into the target pins of the analog-to-digital converter circuit under test using the direct power injection method;

[0050] 2.3.2) Electromagnetic interference signals of different frequencies were applied to the analog-to-digital converter circuit under test to explore its effect on single-event effects. The applied electromagnetic interference signals ranged from 50 kHz to 3 GHz. The adjustment step size of the electromagnetic interference signals was set for different frequency ranges: 300 kHz for 50 kHz to 1 MHz; 3 MHz for 1 MHz to 10 MHz; 30 MHz for 10 MHz to 100 MHz; 300 MHz for 100 MHz to 1 GHz; and 1 GHz for 1 GHz. A power scan was performed at each frequency point, with an initial power of -20 dBm, a step size of 2 dBm, and an upper limit of 37 dBm.

[0051] Step 3: By comparing sensitive point 1 and sensitive point 2 of the analog-to-digital converter circuit under test, the rules of single-event effect of the analog-to-digital converter circuit under test affected by electromagnetic interference and total dose irradiation are obtained.

[0052] The beneficial effects of this embodiment are as follows: 1. It can obtain the distribution map of sensitive points of various functional modules under single-event effects only; 2. It can obtain the distribution map of sensitive points of various functional modules under the influence of electromagnetic interference and total dose irradiation; 3. It can understand the specific manifestations and causes of different sensitive points based on the changes in DC and AC parameters or the function of the circuit under test at the sensitive points; 4. It can grasp the phenomena, conditions, degree and laws of electromagnetic interference and total dose irradiation affecting the single-event effects of analog-to-digital conversion circuits, such as under what frequency of electromagnetic interference signal, what power of electromagnetic interference signal, and what total dose rate the sensitive points of different functional modules are most significantly affected.

Claims

1. A method for measuring the synergistic effects of electromagnetic interference, total dose irradiation, and single-event effects in analog-to-digital conversion circuits, characterized in that, Includes the following steps: Step 1: Irradiate the analog-to-digital converter circuit under test separately with heavy ion microbeams and record the sensitive point 1 of the circuit under test; Step 2: Irradiate the analog-to-digital converter circuit under test with total dose and anneal it, and then perform heavy ion microbeam irradiation; while performing heavy ion microbeam irradiation, inject electromagnetic interference signals from the power supply and ground; after the heavy ion microbeam irradiation is completed, record the sensitive point 2 of the analog-to-digital converter circuit under test. Step 3: By comparing sensitive point 1 and sensitive point 2 of the analog-to-digital converter circuit under test, the rules of single-event effect of the analog-to-digital converter circuit under test affected by electromagnetic interference and total dose irradiation are obtained.

2. The measurement method according to claim 1, characterized in that, Step 1 specifically involves: Step 1.1: Divide the analog-to-digital converter circuit under test into several sensitive test areas, and select comparators, registers, and counters that are sensitive to single-event effects for testing; based on the actual size of each module and with the origin as the reference point, construct a distribution map of sensitive points for micro-beam irradiation; sensitive points are areas with large differences in electrical parameters or functions caused by single-event effects, and finally obtain the distribution map of sensitive points for single-event effects. Step 1.2: Irradiate the analog-to-digital converter circuit under test with heavy ion microbeams; obtain the heavy ion microbeams using the pinhole collimation method, and collimate the heavy ion microbeams twice.

3. The measurement method according to claim 2, characterized in that: Step 1.1 The parameters of the radiation sensitive point are DC and AC parameters, including dynamic current IDD, static current ISB, leakage current IIH flowing into the device when the input pin is high, output low voltage VOL1, output low voltage VOL2, high level time Thigh in the clock cycle, low level time Tlow in the clock cycle, data signal setup time Tsu:dat, start signal setup time Tsu:sta, and data signal output delay time Taa.

4. The measurement method according to claim 2, characterized in that, Step 1 is to obtain a stable heavy ion microbeam. First, a carbon film and a microchannel plate detector are used to monitor the intensity of the heavy ion microbeam. Then, the heavy ion microbeam flux is monitored at different time periods, including before the entire test, before each block test, and after the entire test.

5. The measurement method according to claim 1, characterized in that, Step 2 specifically involves: Step 2.1: Total dose irradiation using a 60Co γ source; Step 2.2: After total dose irradiation, perform four annealing cycles, with the following four scenarios performed simultaneously: ① Annealing for 0 hours, followed by heavy ion microbeam irradiation; ② Anneal for 50 hours, then perform heavy ion microbeam irradiation; ③ Anneal for 100 hours, then perform heavy ion microbeam irradiation; ④ Anneal for 200 hours, then perform heavy ion microbeam irradiation; After heavy ion microbeam irradiation, the single-event effect sensitive points of the analog-to-digital converter circuit under test are detected in different regions. The test after irradiation must start within 1 hour after the irradiation ends, and the test start time must be consistent under different conditions. Step 2.3: While performing heavy ion microbeam irradiation after introducing the total dose effect, inject electromagnetic interference signals from the circuit pins.

6. The measurement method according to claim 5, characterized in that, Step 2.3 is as follows: Step 2.3.1: Lead out the power and ground pins of the test board with wires, and inject electromagnetic interference signals into the target pins of the analog-to-digital converter circuit under test using the direct power injection method; Step 2.3.2: Apply electromagnetic interference signals of different frequencies to the analog-to-digital converter circuit under test. The frequency of the electromagnetic interference signals is 50 kHz-3 GHz. Set the adjustment step size of the electromagnetic interference signals in different frequency ranges: when the frequency range of the electromagnetic interference signals is 50 kHz to 1 MHz, the adjustment step size is 300 kHz; when the frequency range of the electromagnetic interference signals is 1 MHz to 10 MHz, the adjustment step size is 3 MHz; when the frequency range of the electromagnetic interference signals is 10 MHz to 100 MHz, the adjustment step size is 30 MHz; when the frequency range of the electromagnetic interference signals is 100 MHz to 1 GHz, the adjustment step size is 300 MHz; when the frequency range of the electromagnetic interference signals is 1 GHz to 3 GHz, the adjustment step size is 1 GHz. Perform a power scan for each frequency point, with a starting power of -20 dBm, a step size of 2 dBm, and an upper limit power of 37 dBm.

7. The measurement method according to claim 5, characterized in that, Step 2.3 The electromagnetic interference signal test framework includes a directional coupler. The first input of the directional coupler is connected to the output of the power amplifier and the signal generator. The second input of the directional coupler is connected to the output of the forward power and reverse power through the power meter. The forward power and reverse power are connected to the control center. The control center is connected to the test board. The power supply and ground pins of the analog-to-digital converter circuit under test on the test board are connected to the output of the directional coupler.

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