Active ring resonator with temperature compensation in a silicon photonic system

Abstract

The application relates to the technical field of silicon photonics, in particular to an active ring resonator with temperature compensation in a silicon photonics system, which comprises an IC main body, the IC main body is provided with an integrated circuit and an integrated optical path, the integrated circuit is provided with a temperature sensing circuit, a lookup table function circuit, a D / A conversion circuit and a voltage driving circuit, and the integrated optical path is provided with an electro-optic phase modulator and a ring resonator; the application provides an active ring resonator design with temperature compensation; a temperature detection signal is fed back to the optical wave phase modulator to adjust the bias voltage; according to the temperature value read by the temperature sensing circuit, the bias voltage of the optical wave phase modulator is adjusted, the phase shift of the interference light is adjusted to correct the wavelength shift caused by the temperature change in the ring resonator, and the ring resonator can generate resonance enhancement of the optical wave at a specific frequency.

Description

Technical Field

[0001] This invention relates to the field of silicon photonics technology, and in particular to an active ring resonator with temperature compensation in a silicon photonics system. Background Technology

[0002] Silicon photonics, or SiPH, is designed and manufactured using semiconductor processes. It includes integrated circuit (EIC) components and integrated optical circuit (PIC) components, and is an essential component for next-generation microwave communications, massive data centers, and high-speed AI computing.

[0003] In silicon photonics devices, the ring resonator is composed of an optical waveguide looping back on itself. Constructive interference of light waves occurs within the loop, and optical signals of a specific wavelength resonate and are amplified, then coupled into the optical waveguide path of the output signal. It can be used as a spectrum filter, signal switch, signal coupler, and signal buffer.

[0004] However, existing ring resonators have the following drawbacks: changes in ambient temperature alter the refractive index of the optical waveguide within the ring resonator, causing severe optical wavelength shifts and preventing the generation of resonant enhancement of light waves at specific frequencies; therefore, a novel design is proposed to improve these problems. Summary of the Invention

[0005] To overcome the shortcomings mentioned above, the present invention aims to provide a temperature compensation and correction device for a ring resonator used in SiPH, thereby solving the problems mentioned in the background art.

[0006] An active ring resonator with temperature compensation in a silicon photonics system includes an IC body, the IC body having an integrated circuit and an integrated optical path, the integrated circuit having a temperature sensing circuit, a lookup table function circuit, a D / A conversion circuit and a voltage driving circuit, and the integrated optical path having an electro-optic phase modulator and a ring resonator. The voltage driving circuit provides the driving voltage required by the electro-optic phase modulator, the temperature sensing circuit detects the current temperature of the IC body, the lookup table function circuit obtains the corresponding digital signal according to the current temperature, the D / A conversion circuit converts the digital signal into an analog signal and sends it to the electro-optic phase modulator, and the electro-optic phase modulator adjusts the bias voltage according to the analog signal, thereby adjusting the phase shift of the interference light to correct the wavelength shift caused by temperature changes in the ring resonator.

[0007] Preferably, the ring resonator comprises a silicon wafer substrate, a silicon dioxide layer, a P-type silicon layer, a germanium silicide layer, an intermediate insulating layer, a strained silicon nitride layer, an N-type silicon layer, and a polycrystalline silicon layer. The silicon dioxide layer is epitaxially disposed on the silicon wafer substrate. The P-type silicon layer is epitaxially disposed on the silicon dioxide layer. The germanium silicide layer is epitaxially disposed on the P-type silicon layer. The intermediate insulating layer is epitaxially disposed on the germanium silicide layer. The strained silicon nitride layer is epitaxially disposed on the intermediate insulating layer. The N-type silicon layer is epitaxially disposed on the strained silicon nitride layer. The polycrystalline silicon layer is epitaxially disposed on the N-type silicon layer. The P-type silicon layer and the N-type silicon layer are used as optical waveguides and are electrically connected to an electro-optic phase modulator.

[0008] Preferably, the temperature sensing circuit uses a digital temperature sensor of model ADT7302; the lookup table function circuit includes a 4-input lookup table and a Class D flip-flop. It performs logical operations on each input signal of the temperature sensing circuit, finds the address of the corresponding signal, and outputs the corresponding content to the D / A conversion circuit in the form of a digital signal through the Class D flip-flop.

[0009] Preferably, the thickness of the silicon dioxide layer is 120nm-200nm.

[0010] Preferably, the thickness of the P-type silicon layer is 100nm-200nm.

[0011] Preferably, the thickness of the germanium silicide layer is 10nm-25nm.

[0012] Preferably, the thickness of the intermediate insulating layer is 2nm-10nm.

[0013] Preferably, the thickness of the strained silicon nitride layer is 8nm-20nm.

[0014] Preferably, the thickness of the N-type silicon layer is 100nm-200nm.

[0015] Preferably, the thickness of the polycrystalline silicon layer is 100nm-200nm.

[0016] Compared with the prior art, the beneficial effects of the present invention are: This invention proposes an active ring resonator design with temperature compensation. By feeding back the temperature detection signal to the optical phase modulator to adjust the bias voltage, the phase shift of the interference light is adjusted by adjusting the bias voltage of the optical phase modulator based on the temperature value read by the temperature sensing circuit, thereby correcting the wavelength shift caused by temperature changes in the ring resonator. This enables the ring resonator to generate resonance enhancement of light waves at a specific frequency.

[0017] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Description of Drawings

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the following briefly introduces the accompanying drawings required for describing the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort.

[0019] Figure 1 is a schematic diagram of the circuit structure of the present invention; Figure 2 is a circuit schematic diagram of a temperature sensing circuit in the present invention; Figure 3 is a circuit schematic diagram of a look-up table functional circuit in the present invention; Figure 4 is a circuit schematic diagram of a D / A conversion circuit in the present invention; Figure 5 is a circuit schematic diagram of a voltage driving circuit in the present invention; Figure 6 is a structural schematic diagram of an electro-optic phase modulator designed and manufactured in a photonic integrated circuit (PIC) portion according to the present invention; Figure 7 is a structural schematic diagram of a ring resonator designed and manufactured in a photonic integrated circuit (PIC) portion according to the present invention; Figure 8 is a structural schematic diagram of an optical wave phase modulator and a ring resonator integrated in the same integrated optical element according to the present invention.

[0020] The reference numerals and names in the drawings are as follows: temperature sensing circuit 1, look-up table functional circuit 2, D / A conversion circuit 3, voltage driving circuit 4, electro-optic phase modulator 5, ring resonator 6, silicon wafer base layer 61, silicon dioxide layer 62, P-type silicon layer 63, germanium silicide layer 64, intermediate insulating layer 65, strained silicon nitride layer 66, N-type silicon layer 67, polysilicon layer 68. Detailed Description of the Embodiments

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0022] Please refer to Figure 1-8In this embodiment of the invention, an active ring resonator 6 with temperature compensation in a silicon photonics system includes an IC body. The IC body has an integrated circuit and an integrated optical path. The integrated circuit is provided with a temperature sensing circuit 1, a lookup table function circuit 2, a D / A conversion circuit 3 and a voltage driving circuit 4. The integrated optical path is provided with an electro-optic phase modulator 5 and a ring resonator 6. Specifically, such as Figure 2 As shown, a temperature sensing circuit 1 is designed and fabricated in the integrated circuit (EIC) section; as Figure 3 As shown, a lookup table function circuit 2 with a lookup table function is designed and manufactured in the integrated circuit (EIC) section; such as Figure 4 As shown, a D / A conversion circuit 3 is designed and manufactured in the integrated circuit (EIC) section to encode and output digital signals as analog signals; such as Figure 5 As shown, a voltage drive circuit 4 is designed and fabricated in the integrated circuit (EIC) section to provide the drive voltage required by the optical wave phase modulator; as Figure 6 As shown, an electro-optic phase modulator 5 is designed and fabricated in the integrated optical path (PIC) section; as Figure 7 As shown, a ring resonator 6 is designed and fabricated in the integrated optical path (PIC) section; as Figure 8 As shown, in the integrated optical path (PIC) section, the optical phase modulator and the ring resonator 6 are integrated into the same body optical path element to become an active ring resonator 6. Among them, the voltage driving circuit 4 is used to provide the driving voltage required by the electro-optic phase modulator 5, the temperature sensing circuit 1 is used to detect the current temperature of the IC body, the lookup table function circuit 2 obtains the corresponding digital signal according to the current temperature, the D / A conversion circuit 3 converts the digital signal into an analog signal and sends it to the electro-optic phase modulator 5, the electro-optic phase modulator 5 adjusts the bias voltage according to the analog signal, thereby adjusting the phase shift of the interference light to correct the wavelength shift caused by temperature change in the ring resonator 6, so that the ring resonator 6 can generate resonance enhancement of light waves at a specific frequency.

[0023] Preferably, the ring resonator 6 comprises a silicon wafer substrate 61, a silicon dioxide layer 62, a P-type silicon layer 63, a germanium silicide layer 64, an intermediate insulating layer 65, a strained silicon nitride layer 66, an N-type silicon layer 67, and a polycrystalline silicon layer 68. The silicon dioxide layer 62 is epitaxially disposed on the silicon wafer substrate 61, the P-type silicon layer 63 is epitaxially disposed on the silicon dioxide layer 62, the germanium silicide layer 64 is epitaxially disposed on the P-type silicon layer 63, the intermediate insulating layer 65 is epitaxially disposed on the germanium silicide layer 64, the strained silicon nitride layer 66 is epitaxially disposed on the intermediate insulating layer 65, and the N-type silicon layer 67 is epitaxially disposed on the strained silicon wafer substrate 61. On the silicon nitride layer 66, the polycrystalline silicon layer 68 is epitaxially disposed on the N-type silicon layer 67. The P-type silicon layer 63 and the N-type silicon layer 67 are used as optical waveguides and are electrically connected to the electro-optic phase modulator 5. The thickness of the silicon dioxide layer 62 is 120nm-200nm, the thickness of the P-type silicon layer 63 is 100nm-200nm, the thickness of the germanium silicide layer 64 is 10nm-25nm, the thickness of the intermediate insulating layer 65 is 2nm-10nm, the thickness of the strained silicon nitride layer 66 is 8nm-20nm, the thickness of the N-type silicon layer 67 is 100nm-200nm, and the thickness of the polycrystalline silicon layer 68 is 100nm-200nm.

[0024] Preferably, the temperature sensing circuit 1 uses a digital temperature sensor of model ADT7302; the lookup table function circuit 2 includes a 4-input lookup table and a Class D flip-flop, which performs logical operations on each input signal of the temperature sensing circuit 1, finds the address of the corresponding signal, and outputs the corresponding content to the D / A conversion circuit 3 in the form of a digital signal through the Class D flip-flop.

[0025] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the present invention.

Claims

1. An actively ring resonator with temperature compensation in a silicon photonic system, characterized in that, It includes an IC body, which has an integrated circuit and an integrated optical path. The integrated circuit is equipped with a temperature sensing circuit, a lookup table function circuit, a D / A conversion circuit and a voltage driving circuit. The integrated optical path is equipped with an electro-optic phase modulator and a ring resonator. The voltage driving circuit provides the driving voltage required by the electro-optic phase modulator, the temperature sensing circuit detects the current temperature of the IC body, the lookup table function circuit obtains the corresponding digital signal according to the current temperature, the D / A conversion circuit converts the digital signal into an analog signal and sends it to the electro-optic phase modulator, and the electro-optic phase modulator adjusts the bias voltage according to the analog signal, thereby adjusting the phase shift of the interference light to correct the wavelength shift caused by temperature changes in the ring resonator.

2. The active ring resonator with temperature compensation in a silicon photonics system according to claim 1, characterized in that, The ring resonator comprises a silicon wafer substrate, a silicon dioxide layer, a P-type silicon layer, a germanium silicide layer, an interlayer insulating layer, a strained silicon nitride layer, an N-type silicon layer, and a polycrystalline silicon layer. The silicon dioxide layer is epitaxially mounted on the silicon wafer substrate. The P-type silicon layer is epitaxially mounted on the silicon dioxide layer. The germanium silicide layer is epitaxially mounted on the P-type silicon layer. The interlayer insulating layer is epitaxially mounted on the germanium silicide layer. The strained silicon nitride layer is epitaxially mounted on the interlayer insulating layer. The N-type silicon layer is epitaxially mounted on the strained silicon nitride layer. The polycrystalline silicon layer is epitaxially mounted on the N-type silicon layer. The P-type and N-type silicon layers are used as optical waveguides and are electrically connected to an electro-optic phase modulator.

3. The active ring resonator with temperature compensation in a silicon photonics system according to claim 1, characterized in that, The temperature sensing circuit uses a digital temperature sensor of model ADT7302; the lookup table function circuit includes a 4-input lookup table and a Class D flip-flop. It performs logical operations on each input signal of the temperature sensing circuit, finds the address of the corresponding signal, and outputs the corresponding content to the D / A conversion circuit as a digital signal through the Class D flip-flop.

4. The temperature-compensated active ring resonator in a silicon photonics system according to claim 2, characterized in that, The thickness of the silicon dioxide layer is 120nm-200nm.

5. The temperature-compensated active ring resonator in a silicon photonics system according to claim 2, characterized in that, The thickness of the P-type silicon layer is 100nm-200nm.

6. The active ring resonator with temperature compensation in a silicon photonics system according to claim 2, characterized in that, The thickness of the germanium silicide layer is 10nm-25nm.

7. The temperature-compensated active ring resonator in a silicon photonics system according to claim 2, characterized in that, The thickness of the intermediate insulating layer is 2nm-10nm.

8. The active ring resonator with temperature compensation in a silicon photonics system according to claim 2, characterized in that, The thickness of the strained silicon nitride layer is 8nm-20nm.

9. The temperature-compensated active ring resonator in a silicon photonics system according to claim 2, characterized in that, The thickness of the N-type silicon layer is 100nm-200nm.

10. An active ring resonator with temperature compensation in a silicon photonics system according to claim 2, characterized in that, The thickness of the polycrystalline silicon layer is 100nm-200nm.

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