一种基于砷化镓 / 氧化镓PN异质结紫外光电探测器及制备方法

By forming a gallium arsenide/gallium oxide PN heterojunction structure on a Ga2O3 thin film and improving the film quality using MOCVD and annealing processes, the problems of low photocurrent-to-dark-current ratio and complex fabrication of Ga2O3 ultraviolet detectors were solved, and a high responsivity and low noise ultraviolet photodetector was fabricated.

CN117410378BActive Publication Date: 2026-07-17JILIN UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JILIN UNIVERSITY
Filing Date
2023-10-25
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing Ga2O3 ultraviolet photodetectors suffer from low light-dark-current ratio and complex manufacturing processes. Furthermore, due to the lack of P-type doping, it is difficult to achieve efficient ultraviolet light response.

Method used

A UID-Ga2O3 low-temperature buffer layer, an n-Ga2O3 thin film, and an n+-Ga2O3 ohmic contact layer were grown on a p-GaAs substrate using MOCVD. The defect density was reduced by in-situ annealing. Combined with a Ti/Au transparent electrode and an Au ohmic contact, a gallium arsenide/gallium oxide PN heterojunction structure was formed.

Benefits of technology

This improved the light-to-dark current ratio and responsivity, reduced device noise, and achieved low-cost, high-efficiency ultraviolet photoelectric detection performance.

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Abstract

一种基于砷化镓 / 氧化镓PN异质结紫外光电探测器及制备方，属于半导体光电探测器技术领域。由Au电极、p‑GaAs衬底、UID‑Ga2O3低温缓冲层、n(轻掺杂)‑Ga2O3薄膜、n+(重掺杂)‑Ga2O3欧姆接触层、Ti / Au透明电极组成，薄膜外延全部由MOCVD工艺完成。本发明能够实现光暗电流比大、低噪声、高响应的砷化镓 / 氧化镓PN异质结紫外光电探测器的制备，可以在光照强度为300μW / cm2时，实现3×104的光暗电流比和0.6A / W的响应度。本发明克服了目前水平结构Ga2O3紫外探测器缺少P型、光暗电流比低、工艺复杂的问题，能够有效提高Ga2O3紫外探测器的光暗电流比，促进其实际应用。
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