Electronic device

Abstract

The present disclosure provides an electronic device. The electronic device includes a driving substrate, a light emitting unit, and a reflective structure. The driving substrate includes a contact. The light emitting unit is disposed on the driving substrate. The light emitting unit is electrically connected to the contact. The reflective structure is disposed on the driving substrate. The reflective structure includes a first insulating layer, a metal layer, and a second insulating layer, and the metal layer is between the first insulating layer and the second insulating layer.

Description

Technical Field

[0001] This disclosure relates to an electronic device, and more particularly to an electronic device including a reflective structure. Background Technology

[0002] Generally speaking, reflective components such as optical reflective sheets or optical reflective adhesives can be set in the light-emitting unit of an electronic device to reduce light loss of the light-emitting unit and / or increase the brightness of the electronic device.

[0003] However, the application of optical reflective sheets is limited by the limited precision of the cutting process used to cut them. On the other hand, optical reflective adhesives are limited by their thickness. For example, when the thickness of the optical reflective adhesive is insufficient, it cannot provide enough reflectivity; however, when the thickness of the optical reflective adhesive is too large, it may cover and / or overflow onto the light-emitting surface of the light-emitting unit, resulting in dark areas or uneven light emission.

[0004] Therefore, although existing electronic devices have gradually fulfilled their intended uses, they are not yet completely satisfactory in every aspect. Thus, there are still some problems to be overcome regarding electronic devices. Summary of the Invention

[0005] In some embodiments, an electronic device is provided. The electronic device includes a driving substrate, a light-emitting unit, and a reflective structure. The driving substrate includes a contact. The light-emitting unit is disposed on the driving substrate. The light-emitting unit is electrically connected to the contact. The reflective structure is disposed on the driving substrate. The reflective structure includes a first insulating layer, a metal layer, and a second insulating layer, with the metal layer located between the first insulating layer and the second insulating layer.

[0006] The electronic device disclosed herein can be applied to various types of electronic devices. To make the components and advantages of this disclosure more apparent and understandable, various embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0007] When with attachment Figure 1 This disclosure will be more fully understood from the following detailed description. It is worth noting that, in accordance with industry standard practice, the components are not shown to scale. In fact, for clarity, the dimensions of the components may be arbitrarily enlarged or reduced.

[0008] Figure 1 This is a schematic cross-sectional view of an electronic device according to some embodiments of the present disclosure.

[0009] Figure 2 This is a schematic cross-sectional view of an electronic device according to some embodiments of the present disclosure.

[0010] Figure 3 This is a schematic cross-sectional view of an electronic device according to some embodiments of the present disclosure.

[0011] Figure 4 This is a cross-sectional schematic diagram of a region of an electronic device according to some embodiments of the present disclosure.

[0012] Figure 5 This is a cross-sectional schematic diagram of a region of an electronic device according to some embodiments of the present disclosure.

[0013] [Symbol Explanation]

[0014] 1,2,3: Electronic devices

[0015] 100: Base

[0016] 102: Passivation layer

[0017] 104:Contact

[0018] 104': Conductive layer

[0019] 106, 108: Solder

[0020] 108a: Exposed parts

[0021] 110: Reflective layer

[0022] 110a, 200a: Partial

[0023] 112: Protective layer

[0024] 200: Reflective Structure

[0025] 202: First Insulation Layer

[0026] 203: Reflective film

[0027] 204: Metal layer

[0028] 204a: First metal layer

[0029] 204b: Second metal layer

[0030] 206: Second insulating layer

[0031] 300: Light-emitting unit

[0032] 302: Conductive pad

[0033] D1: First Direction

[0034] D2: Second Direction

[0035] D3: Third direction

[0036] h: height

[0037] R1: First Region

[0038] R2: Second Region

[0039] R3: Third Region

[0040] SB: Driver board

[0041] w1: First width

[0042] w2: Second width Detailed Implementation

[0043] The electronic devices described below are illustrated with reference to various embodiments of this disclosure. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of this disclosure. The specific components and arrangements described below are merely for the simple and clear description of some embodiments of this disclosure. Of course, these are merely examples and not intended to limit the scope of this disclosure. Furthermore, similar and / or corresponding component symbols may be used in different embodiments to identify similar and / or corresponding components for the clear description of this disclosure. However, the use of these similar and / or corresponding component symbols is merely for the simple and clear description of some embodiments of this disclosure and does not imply any correlation between the different embodiments and / or structures discussed.

[0044] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in various embodiments to describe the relative relationship of one component of the figures to another. It is understood that if the apparatus in the figures is flipped upside down, the component described as being on the "lower" side will become the component on the "higher" side. Embodiments of this disclosure may be used in conjunction with the accompanying drawings. Figure 1 It is understood that the accompanying drawings are also considered part of the disclosure.

[0045] Furthermore, when it is mentioned that a first material layer is disposed on or over a second material layer, it may include situations where the first material layer and the second material layer are in direct contact, or situations where the first material layer and the second material layer are not in direct contact, that is, situations where there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is disposed directly on the second material layer, it indicates that the first material layer and the second material layer are in direct contact.

[0046] Furthermore, it should be understood that the ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify components, are not intended to imply any prior ordinal number for that (or these) components, nor to indicate the order of one component with another, or the order of manufacture. The use of these ordinal numbers is solely to clearly distinguish one named component from another component with the same name. The claims and specification may not use the same terminology; for example, the first component in the specification may be the second component in the claims.

[0047] In some embodiments of this disclosure, terms such as "connect," "interconnect," and "bond," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, wherein another structure is disposed between the two structures. Furthermore, these terms regarding connection and bonding may also include situations where both structures are movable or both structures are fixed. In addition, the terms "electrical connection" or "electrical coupling" include any direct and indirect electrical connection means.

[0048] In this text, the terms "approximately," "about," and "substantially" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The given quantity is an approximate quantity; that is, even without specific mention of "approximately," "about," or "substantially," the meaning of these terms is implied. The phrase "the range is between the first value and the second value" indicates that the range includes the first value, the second value, and other values ​​in between. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10%, 5%, 3%, 2%, 1%, or 0.5% between the first and second values. If the first direction is perpendicular to the second direction, the angle between the first and second directions may be between 80 and 100 degrees. If the first direction is parallel to the second direction, then the angle between the first direction and the second direction can be between 0 degrees and 10 degrees.

[0049] Throughout this disclosure, certain terms are used to refer to specific components. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same components. This document is not intended to distinguish between components that have the same function but different names. In the following description and claims, words such as "comprise," "containing," and "having" are open-ended terms and should therefore be interpreted as "containing but not limited to...". Thus, when the terms "comprise," "containing," and / or "having" are used in the description of this disclosure, they specify the presence of the corresponding part, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding part, area, step, operation, and / or component.

[0050] It should be understood that, without departing from the spirit of this disclosure, components in multiple different embodiments can be replaced, reorganized, or combined to complete other embodiments. Components in each embodiment can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with it.

[0051] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is made. It is understood that such terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0052] In this disclosure, the directions are not limited to the three axes of a Cartesian coordinate system, such as the X-axis, Y-axis, and Z-axis, and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other, but are not limited thereto. For ease of explanation, in the following text, the X-axis direction is the first direction D1 (width direction), the Z-axis direction is the second direction D2 (height or thickness direction), and the Y-axis direction is the third direction D3. In some embodiments, the cross-sectional view described herein is a cross-sectional view of the XZ plane.

[0053] In this disclosure, the electronic device may include, but is not limited to, a display device, a lighting device, an antenna device, a sensing device, or a titling device. The electronic device may be foldable or flexible. The display device may be a non-self-emissive display device or a self-emissive display device. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device. The sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound, but is not limited to these. Electronic components may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited to these. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any of the aforementioned arrangements and combinations, but is not limited thereto. The following description will use an embodiment of an electronic device including a light-emitting unit, wherein the light-emitting unit includes a diode, to illustrate the content of this disclosure, but this disclosure is not limited thereto.

[0054] Furthermore, the electronic device can be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device may include peripheral systems such as processing systems, drive systems, control systems, light source systems, and shelving systems to support the electronic device or splicing device.

[0055] In some embodiments, additional components may be added to the electronic device of this disclosure. In some embodiments, certain components of the electronic device of this disclosure may be replaced or omitted. In some embodiments, additional operating steps may be provided before, during, and / or after the method of manufacturing the electronic device. In some embodiments, some of the operating steps may be replaced or omitted, and the order of some of the operating steps is interchangeable. Furthermore, it should be understood that some of the described steps may be replaced or deleted for other embodiments of the method.

[0056] In some embodiments, the method for manufacturing the electronic device disclosed herein is applicable to chip-first processes and redistribution layer-first (RDL-first) processes. In some embodiments, the method for manufacturing the electronic device disclosed herein is applicable to pad-up processes and pad-down processes. For ease of explanation, the pad-down redistribution layer-first process is used as an example below, but this disclosure is not limited thereto. Furthermore, in this disclosure, the number and dimensions of the components in the accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0057] Reference Figure 1 This is a cross-sectional schematic diagram of an electronic device 1 according to some embodiments of the present disclosure. In some embodiments, the electronic device 1 may include a driving substrate SB, a reflective structure 200, and a light emitting unit 300. In some embodiments, the reflective structure 200 may be disposed on the driving substrate SB. In some embodiments, the light emitting unit 300 may be disposed on the driving substrate SB, and the light emitting unit 300 is electrically connected to the driving substrate SB. In some embodiments, the light emitting unit 300 is adjacent to the reflective structure 200 in a first direction D1. In some embodiments, the light emitting unit 300 and the reflective structure 200 are staggered in the first direction D1. In some embodiments, multiple light emitting units 300 may be provided, and the reflective structure 200 may be disposed between adjacent light emitting units 300 among the multiple light emitting units 300.

[0058] In some embodiments, the driving substrate SB may include a substrate 100. In some embodiments, depending on different requirements, the substrate 100 may include or be a rigid substrate, a flexible substrate, or a combination of the aforementioned substrates, but this disclosure is not limited thereto. In some embodiments, the material of the substrate 100 may include or be a wafer, glass, quartz, ceramics, sapphire, plastic, other suitable materials, or a combination of the aforementioned materials, but this disclosure is not limited thereto. In some embodiments, the material of the substrate 100 may include or be polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), other suitable materials, or a combination of the aforementioned materials, but this disclosure is not limited thereto. In some embodiments, the substrate 100 may be a single-layer or multi-layer structure, but this disclosure is not limited thereto. In some embodiments, the substrate 100 may include or be a light-transmitting substrate, a semi-light-transmitting substrate, or an opaque substrate.

[0059] In some embodiments, the driving substrate SB may further include a driving circuit (not shown) disposed on the substrate 100. In some embodiments, the driving circuit may include an active component, a passive component, a wire, other suitable components, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the driving circuit may be disposed in the central region and / or peripheral region of the driving substrate SB. In some embodiments, the driving circuit may be a gate driving circuit or a source driving circuit. In some embodiments, the driving circuit may include a plurality of transistors (not shown). In some embodiments, the transistors may be driving transistors to drive the light-emitting unit 300.

[0060] In some embodiments, the driving substrate SB may further include a passivation layer 102. In some embodiments, the passivation layer 102 is disposed on the substrate 100. In some embodiments, the material of the passivation layer 102 may include or may be an organic material, an inorganic material, or any combination thereof, but is not limited thereto. In some embodiments, the organic material may include or may be an oxide such as silicon oxide, a nitride such as silicon nitride, an oxide such as silicon oxynitride, other suitable organic materials, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the passivation layer 102 may be disposed on the driving circuit as an insulating layer for the driving circuit. In some embodiments, the passivation layer 102 may be formed by, for example, chemical vapor deposition (CVD), sputtering, resistance heating evaporation, electron beam evaporation, other suitable deposition methods, or any combination thereof.

[0061] In some embodiments, the driving substrate SB may further include a contact 104. In some embodiments, the contact 104 is disposed on the passivation layer 102 and is electrically connected to the driving circuit in the driving substrate SB. In some embodiments, the contact 104 may be considered as part of the redistribution layer in the pre-redistribution layer process. In some embodiments, the driving circuit in the driving substrate SB may be electrically connected to the light-emitting unit 300 disposed on the driving substrate SB via the contact 104 to drive the light-emitting unit 300.

[0062] In some embodiments, the material of contact 104 may include or may be a conductive material. In some embodiments, the conductive material may include or may be a metal, a metal nitride, a semiconductor material, any other suitable conductive material, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the conductive material may include or may be gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), silver (Ag), magnesium (Mg), their alloys or compounds, other suitable conductive materials, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the conductive material may include or may be a transparent conductive oxide (TCO). For example, the transparent conductive oxide may include indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the contact 104 may be formed by, for example, chemical vapor deposition, sputtering, resistance heating evaporation, electron beam evaporation, physical vapor deposition (PVD), other suitable deposition processes, or any combination thereof, but this disclosure is not limited thereto.

[0063] In some embodiments, the driving substrate SB may further include other conductive layers, other insulating layers, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, one or more other conductive layers and / or other insulating layers may be disposed on the substrate 100. In some embodiments, the other insulating layers may include or may be conductive materials that are the same as or different from those of the passivation layer 102. In some embodiments, the other conductive layers may include or may be conductive materials that are the same as or different from those of the contact 104.

[0064] like Figure 1As shown, in some embodiments, the reflective structure 200 may include a first insulating layer 202, a metal layer 204, and a second insulating layer 206, with the metal layer 204 located between the first insulating layer 202 and the second insulating layer 206. In some embodiments, the first insulating layer 202 may be disposed on the contact 104 and passivation layer 102 of the driving substrate SB, the metal layer 204 may be disposed on the first insulating layer 202, and the second insulating layer 206 may be disposed on the metal layer 204. In some embodiments, the reflective structure 200 may expose the top surface of the contact 104 so that the top surface of the contact 104 is electrically connected to the subsequently formed solder 106 and solder 108. In some embodiments, the first insulating layer 202, the metal layer 204, and the second insulating layer 206 may be in direct contact with each other. In other embodiments, an additional layer may be disposed between the first insulating layer 202 and the metal layer 204 and / or between the metal layer 204 and the second insulating layer 206.

[0065] In some embodiments, the materials and formation methods of the first insulating layer 202 and / or the second insulating layer 206 may be the same as or different from the materials and formation methods of the passivation layer 102. In some embodiments, the materials and formation methods of the metal layer 204 may be the same as or different from the materials or formation methods of the contact 104. In some embodiments, the metal layer 204 may include or may be gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), silver (Ag), magnesium (Mg), other suitable metallic materials, or any combination thereof, but this disclosure is not limited thereto.

[0066] In some embodiments, the metal layer 204 may include or may be a highly reflective metal layer. In some embodiments, reflectivity may be the ratio of reflected light power to incident light power (reflected light / incident light). In some embodiments, reflectivity may be the light reflectivity of light emitted by the light-emitting unit 300. For example, when the light emitted by the light-emitting unit 300 is visible light, the reflectivity may be the reflectivity at a wavelength of 550 nm for visible light, but this disclosure is not limited thereto. In some embodiments, the reflectivity of the highly reflective metal layer at a wavelength of 550 nm for visible light is greater than or equal to 85%. For example, the reflectivity of the highly reflective metal layer at a wavelength of 550 nm for visible light is greater than 85%, 87.5%, 90%, 92.5%, 95%, 97.5%, 98%, 99%, or any value and range between the foregoing values, but this disclosure is not limited thereto. Therefore, by setting the metal layer 204, the reflection and / or scattering of light emitted by the light-emitting unit 300 can be increased, the leakage of light emitted by the light-emitting unit 300 to the outside of the electronic device 1 can be reduced, the light loss of the light-emitting unit 300 can be reduced, the visual effect of the electronic device 1 can be made more uniform, the brightness of the electronic device 1 can be improved, and / or the overall thickness of the electronic device 1 can be reduced.

[0067] like Figure 1 As shown, in some embodiments, solder 106 and solder 108 may be disposed on the driving substrate SB. In some embodiments, solder 106 and solder 108 may be located between adjacent reflective structures 200. In some embodiments, solder 106 is disposed on the contact 104 of the driving substrate SB, and solder 108 is disposed on solder 106. In some embodiments, solder 106 and / or solder 108 may include or may be nickel, tin, lead, silver, copper, indium, bismuth, zinc, antimony, other suitable solders, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, solder 106 and solder 108 may be the same or different. In some embodiments, solder 106 may include nickel, and solder 108 may include tin, depending on usage requirements. In some embodiments, solder 106 and solder 108 provide an electrical connection between the contact 104 of the driving substrate SB and the light-emitting unit 300. For example, the driving substrate SB and the light-emitting unit 300 are bonded together by solder 106 and / or solder 108. In some embodiments, one of solder 106 and solder 108 may be omitted. In other embodiments, solder 106 and / or solder 108 may be conductive adhesive.

[0068] like Figure 1As shown, in some embodiments, the light-emitting unit 300 may include light-emitting components such as pixels, light-emitting diodes, and photodiodes; conductive components such as metal layers, wires, vias, and bonding pads; driving components such as transistors; functional layers such as insulating layers, interlayer dielectric layers, passivation layers, planarization layers, and dielectric materials; other suitable components or any combination thereof, but this disclosure is not limited thereto.

[0069] In some embodiments, the light-emitting unit 300 may include or may be a diode unit. For example, the light-emitting unit 300 may be a sub-millimeter light-emitting diode (mini LED) unit or a micro light-emitting diode (micro LED) unit. In some embodiments, the light-emitting unit 300 may include a conductive pad 302 located at the bottom of the light-emitting unit 300. In some embodiments, the material of the conductive pad 302 may be the same as or different from the material of the contact 104. In some embodiments, the conductive pad 302 of the light-emitting unit 300 is electrically connected to the solder 108. In some embodiments, the conductive pad 302 substantially covers the top surface of the solder 108. In some embodiments, in the first direction D1, the width of the conductive pad 302 is substantially the same as the width of the solder 108.

[0070] In some embodiments, the light-emitting unit 300 has a height h in the second direction D2. In some embodiments, the height h may be less than or equal to 600 μm. In some embodiments, the height h may be less than or equal to 600 μm, 550 μm, 500 μm, 450 μm, 400 μm, 350 μm, 300 μm, 250 μm, 200 μm, 190 μm, 180 μm, 170 μm, 160 μm, 150 μm, 140 μm, 130 μm, 120 μm, 110 μm, 100 μm, other suitable values, or any value or range between the aforementioned values.

[0071] It should be noted that the height of optical reflective adhesives, such as white glue, must be at least 180 μm and less than or equal to 200 μm (180 μm ≤ height ≤ 200 μm) to ensure sufficient reflectivity. Therefore, if the height of the light-emitting unit 300 is less than or close to the required height of the optical reflective adhesive, the adhesive will cover or overflow onto the light-emitting unit 300, significantly reducing the luminous performance of the electronic device. Furthermore, because it is difficult to cut the optical reflective sheet to the size suitable for the light-emitting unit 300 described above, using the optical reflective sheet as a reflective component when the size of the reflective sheet does not match the size of the light-emitting unit 300 will significantly reduce the luminous performance of the electronic device. However, since the reflective structure 200 of this disclosure includes a highly reflective metal layer 204, it is not limited by the above problems and can improve the luminous performance of the electronic device 1.

[0072] like Figure 1 As shown, in some embodiments, in the first direction D1, at least one of the first insulating layer 202 and the second insulating layer 206 of the reflective structure 200 is located between the metal layer 204 and the contact 104 to provide electrical isolation between the metal layer 204 and the contact 104, thereby reducing the problems of leakage current, short circuit and / or electrical interference that may occur between the metal layer 204 and the contact 104.

[0073] like Figure 1 As shown, in some embodiments, in the second direction D2, a portion 200a of the reflective structure 200 may be located below the light-emitting unit 300. Therefore, this portion 200a of the reflective structure 200 can enhance the reflection and / or scattering of light located below the light-emitting unit 300, reduce light leakage, reduce light loss, improve visual effect, and / or increase brightness. In some embodiments, at least one of the first insulating layer 202 and the second insulating layer 206 in this portion 200a of the reflective structure 200 may be located between the metal layer 204 and the contact 104 and / or between the metal layer 204 and the solder 106, so the first insulating layer 202 and / or the second insulating layer 206 can provide electrical isolation between the metal layer 204 and the contact 104 and / or between the metal layer 204 and the solder 106. Therefore, problems such as leakage current, short circuits, and / or electrical interference that may occur between the metal layer 204 and the contact 104 and / or between the metal layer 204 and the solder 106 can be reduced. In other embodiments, a portion 200a of the reflective structure 200 may omit the metal layer 204 and / or the second insulating layer 206 to avoid electrical problems between the metal layer 204 and the solder 106 and / or simplify the process for forming the second insulating layer 206.

[0074] like Figure 1As shown, in some embodiments, a first region R1 of the electronic device 1 is indicated by a dashed box. In some embodiments, in the first region R1, a first insulating layer 202 is disposed on a conductive layer 104', a metal layer 204 is disposed on the first insulating layer 202, and a second insulating layer 206 is disposed on the metal layer 204. In some embodiments, in the first region R1, a reflective structure 200 is conformally disposed on the conductive layer 104'. In some embodiments, the materials and formation methods of the contact 104 and the conductive layer 104' may be the same or different. In some embodiments, the contact 104 and the conductive layer 104' may be formed in the same process or in different processes.

[0075] Reference Figure 2 This is a cross-sectional schematic diagram of electronic device 2 according to some embodiments of the present disclosure. In the following text, the same or similar descriptions will not be repeated. Figure 2 As shown, in some embodiments, the conductive pad 302 of the light-emitting unit 300 may cover a portion of the solder 108 and expose another portion of the solder 108. In some embodiments, in the second direction D2, the conductive pad 302 is not disposed on the exposed portion 108a of the solder 108. In some embodiments, in the second direction D2, the projection of the conductive pad 302 and / or the light-emitting unit 300 onto the substrate 100 may fall within the projection of the solder 108 onto the substrate 100. In some embodiments, the exposed portion 108a of the solder 108 may be located between the light-emitting unit 300 and the reflective structure 200, and its exposed portion 108a does not overlap with the light-emitting unit 300 in the second direction D2. In some embodiments, in the first direction D1, the solder 108 has a first width w1, the conductive pad 302 has a second width w2, and the first width w1 may be greater than the second width w2. Therefore, the process margin and reliability of the bonding process between the conductive pad 302 of the light-emitting unit 300 and the solder 108 located on the driving substrate SB can be improved.

[0076] like Figure 2 As shown, in some embodiments, the electronic device 2 may further include a reflective layer 110. In some embodiments, the reflective layer 110 may be disposed on the exposed portion 108a of the solder 108, the second insulating layer 206 of the reflective structure 200, and the side surface of the light-emitting unit 300. In some embodiments, in the second direction D2, the reflective layer 110 may cover the exposed portion 108a of the solder 108. Therefore, the reflective layer 110 can improve the reflectivity of the exposed portion 108a of the solder 108. In some embodiments, the reflective layer 110 may be disposed by a dispensing process, other suitable processes, or a combination of the aforementioned processes, but this disclosure is not limited thereto.

[0077] In some embodiments, the reflective layer 110 may be disposed on the side surface of the conductive pad 302. In some embodiments, the reflective layer 110 may be disposed on the side surface of the light-emitting unit 300, and the reflective layer 110 may expose the light-emitting surface (e.g., the top surface) of the light-emitting unit 300. In some embodiments, when viewed in cross-sectional view, the reflective layer 110 may have an arcuate profile or a teardrop-shaped profile. In some embodiments, when viewed in cross-sectional view, the reflective layer 110 may be disposed on both the side and top surfaces of the reflective structure 200. In other embodiments, when viewed in cross-sectional view, the reflective layer 110 may be disposed on the side surface of the reflective structure 200, and the top surface of the reflective structure 200 may be exposed. In other embodiments, when viewed in cross-sectional view, the reflective layer 110 may expose both the side and top surfaces of the reflective structure 200, and in the first direction D1, the reflective layer 110 may be spaced apart from the reflective structure 200 by a distance.

[0078] In some embodiments, at least a portion 110a of the reflective layer 110 may be located between the solder 106, solder 108 and reflective structure 200 to reduce leakage current, short circuit and / or electrical interference problems between the solder 106, solder 108 and the metal layer 204 in the reflective structure 200.

[0079] In some embodiments, the material of the reflective layer 110 may include or may be an adhesive. In some embodiments, the adhesive may include or may be white paint, white glue, an adhesive with high reflectivity, other suitable adhesives, or any combination thereof, but this disclosure is not limited thereto. Therefore, when the reflective layer 110 may include an adhesive, the reflective layer 110 can provide protection for the light-emitting unit 300 and the reflective structure 200.

[0080] In some embodiments, the reflective layer 110 may include or may be a highly reflective adhesive. In some embodiments, the reflectivity of the reflective layer 110 at a visible light wavelength of 550 nm is greater than or equal to 80%. For example, the reflectivity of the reflective layer 110 at a visible light wavelength of 550 nm is greater than 80%, 82.5%, 85%, 87.5%, 90%, 92.5%, 95%, 97.5%, 98%, 99%, or any value and range between the foregoing values, but this disclosure is not limited thereto. Therefore, the reflective layer 110 can improve the reflectivity of the electronic device 2.

[0081] Figure 3 This is a schematic cross-sectional view of electronic device 3 according to some embodiments of the present disclosure. In the following text, the same or similar descriptions will not be repeated. Figure 3 As shown, in some embodiments, the electronic device 3 may further include a protective layer 112. In some embodiments, the protective layer 112 may be disposed on the reflective structure 200. Figure 3As shown, in some embodiments, a protective layer 112 may be disposed on the side and top surfaces of the reflective layer 110, the second insulating layer 206 of the reflective structure 200, and the side surface of the light-emitting unit 300. In some embodiments, the protective layer 112 can prevent defects such as pinholes on the top surface of the second insulating layer 206 from causing oxidation of the metal layer 204 located below the second insulating layer 206 and / or leakage current between the metal layer 204 and other components. Furthermore, since the protective layer 112 provides insulation properties, the thickness of the second insulating layer 206 and / or the reflective layer 110 can be reduced (in the second direction D2), thereby reducing the overall thickness of the electronic device 3 (in the second direction D2).

[0082] In some embodiments, the reflective layer 110 may be omitted from the electronic device 3, and thus the protective layer 112 may be disposed on the second insulating layer 206 of the reflective structure 200. For example, the protective layer 112 may contact the second insulating layer 206 of the reflective structure 200, the side surface of the solder 106, the side and top surfaces of the solder 108, and the side surface of the light-emitting unit 300.

[0083] In some embodiments, the material of the protective layer 112 may include or may be an adhesive. In some embodiments, the adhesive may include or may be optically clear adhesive (OCA), optically clear resin (OCR), other suitable adhesives, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the adhesive may include or may be an acrylic acid-based adhesive. In some embodiments, the material of the protective layer 112 may include or may be a molding material, so the protective layer 112 can be used to fix the light-emitting unit 300.

[0084] Figure 4 This is a schematic cross-sectional view of the second region R2 of an electronic device according to some embodiments of the present disclosure. Figure 4 The second region R2 shown is Figure 1 Another embodiment of the first region R1 shown, therefore Figure 4 The second region R2 shown can be applied to respectively Figures 1 to 3 Among the electronic devices 1 to 3 shown.

[0085] like Figure 4As shown, in some embodiments, the reflective structure 200 may further include a reflective film 203. In some embodiments, the reflective film 203 may be disposed between the first insulating layer 202 and the metal layer 204 and / or between the metal layer 204 and the second insulating layer 206. In the second region R2, the first insulating layer 202 is disposed on the conductive layer 104', the reflective film 203 is disposed on the first insulating layer 202, the metal layer 204 is disposed on the reflective film 203, and the second insulating layer 206 is disposed on the metal layer 204.

[0086] In some embodiments, the material of the reflective film 203 may include or may be white photoresist or white adhesive. Therefore, when the reflective film 203 includes white photoresist, it is easier to form the reflective film 203 on the first insulating layer 202, thereby improving the reliability of the electronic device. In some embodiments, the reflective film 203 may include or may be an insulating material. Therefore, the reflective film 203 can provide insulation between the contact 104 and the metal layer 204 to avoid leakage current, short circuits, and / or electrical interference problems between the contact 104 and the metal layer 204. Furthermore, since the reflective film 203 can be disposed on the first insulating layer 202, the reflective film 203 can prevent defects such as perforations on the top surface of the first insulating layer 202 from causing oxidation of the contact 104 located below the first insulating layer 202 and / or leakage current between the metal layer 204 and the contact 104.

[0087] In some embodiments, the reflectivity of the reflective film 203 at a visible light wavelength of 550 nm may be greater than or equal to 80%. For example, the reflectivity of the reflective film 203 at a visible light wavelength of 550 nm may be greater than 80%, 82.5%, 85%, 87.5%, 90%, 92.5%, 95%, 97.5%, 98%, 99%, or any value and range between the foregoing values, but this disclosure is not limited thereto. Therefore, since the reflective structure 200 includes the reflective film 203 and the metal layer 204, the reflectivity of the electronic device can be improved by the combined effect of the reflective film 203 and the metal layer 204.

[0088] Figure 5 This is a cross-sectional schematic diagram showing a region of an electronic device according to some embodiments of the present disclosure. Figure 5 The third region R3 shown is Figure 1 The first region R1 and / or shown Figure 4 Another embodiment of the second region R2 shown, therefore Figure 5 The third region R3 shown can be applied to... Figures 1 to 3 Among the electronic devices 1 to 3 shown.

[0089] like Figure 5As shown, in some embodiments, metal layer 204 may further include a first metal layer 204a and a second metal layer 204b. In the third region R3, a first insulating layer 202 is disposed on the conductive layer 104', a first metal layer 204a is disposed on the first insulating layer 202, a second metal layer 204b is disposed on the first metal layer 204a, and a second insulating layer 206 is disposed on the second metal layer 204b. In some embodiments, the material and formation method of the first metal layer 204a and / or the second metal layer 204b may be the same as or different from the material and formation method of the metal layer 204. In some embodiments, the first metal layer 204a and / or the second metal layer 204b may include or may be gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), silver (Ag), magnesium (Mg), other suitable metal materials, or any combination thereof, but this disclosure is not limited thereto. In some embodiments, the first metal layer 204a and the second metal layer 204b are made of different materials, so there is a substantial interface between the first metal layer 204a and the second metal layer 204b.

[0090] In some embodiments, the reflectivity of the first metal layer 204a and / or the second metal layer 204b at a visible light wavelength of 550 nm may be greater than or equal to 85%. For example, the reflectivity of the first metal layer 204a and / or the second metal layer 204b at a visible light wavelength of 550 nm may be greater than 85%, 87.5%, 90%, 92.5%, 95%, 97.5%, 98%, 99%, or any value and range between the foregoing values, but this disclosure is not limited thereto. In some embodiments, the reflectivity of the first metal layer 204a and the second metal layer 204b may be different.

[0091] In some embodiments, the thickness of the first metal layer 204a in the second direction D2 may be less than the thickness of the second metal layer 204b. Therefore, the first metal layer 204a can serve as a seed layer and / or a buffer layer to improve the reliability of the second metal layer 204b. In some embodiments, the thickness of the first metal layer 204a and / or the second metal layer 204b in the second direction D2 may be greater than or equal to 0.4 μm and less than or equal to 1 μm (0.4 μm ≤ thickness of the first metal layer 204a and / or the second metal layer 204b ≤ 1 μm). In some embodiments, when the thickness of the first metal layer 204a is less than the thickness of the second metal layer 204b, the reflectivity of the first metal layer 204a may be less than the reflectivity of the second metal layer 204b.

[0092] In summary, according to the embodiments of this disclosure, an electronic device including a reflective structure is provided to solve the problem that it is difficult to install optical reflective sheets or optical reflective adhesives on small-sized light-emitting units after miniaturization processes by means of a reflective structure with stacked layers. Therefore, the reflective structure of this disclosure can improve the reliability, electrical performance, and / or optical performance of the electronic device.

[0093] In detail, when using an optical reflective sheet as the reflective component, reflectivity is increased by enlarging the opening in the optical reflective sheet corresponding to the light-emitting unit. However, this reduces the reflectivity around the light-emitting unit. Additionally, when using an optical reflective adhesive as the reflective component, the adhesive may be thinned to reduce overflow or obstruction of the light-emitting surface of the light-emitting unit. However, this reduces the reflectivity of the optical reflective adhesive itself, making it difficult to provide sufficient reflectivity. However, the reflective structure disclosed herein can provide high reflectivity performance through a high-reflectivity metal layer without reducing the reflectivity around the light-emitting unit and / or without reducing the overall reflectivity. Therefore, the reflective structure disclosed herein is widely applicable to light-emitting units of various sizes.

[0094] Components in the embodiments of this disclosure can be freely mixed and matched as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any processes, machines, manufacturing, material composition, apparatus, methods, and steps currently or in the future that can be developed from the disclosure of this disclosure, as long as they can perform substantially the same function or obtain substantially the same result in the embodiments described herein, can be used according to this disclosure. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. No embodiment or claim of this disclosure is required to achieve all the purposes, advantages, and / or features disclosed in this disclosure.

[0095] The foregoing outlines several embodiments to enable those skilled in the art to better understand the viewpoints of the embodiments described herein. Those skilled in the art should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purposes and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent processes and structures do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

Claims

1. An electronic device, characterized in that, include: A driving substrate includes a contact; A light-emitting unit is disposed on the driving substrate, and the light-emitting unit is electrically connected to the contact. A reflective structure is disposed on the driving substrate; The reflective structure includes a first insulating layer, a metal layer and a second insulating layer, wherein the metal layer is located between the first insulating layer and the second insulating layer; A solder, by means of electrically connecting the light-emitting unit to the contact, and the solder includes an exposed portion located between the light-emitting unit and the reflective structure; and A reflective layer is disposed on the exposed portion of the solder.

2. The electronic device as claimed in claim 1, characterized in that, At least one of the first insulating layer and the second insulating layer is located between the metal layer and the contact.

3. The electronic device as claimed in claim 1, characterized in that, Including: A protective layer is provided on the reflective structure.

4. The electronic device as claimed in claim 3, characterized in that, The protective layer is made of an adhesive material.

5. The electronic device as claimed in claim 1, characterized in that, The material of the reflective layer includes an adhesive.

6. The electronic device as claimed in claim 1, characterized in that, A portion of the reflective structure is positioned below the light-emitting unit.

7. The electronic device as claimed in claim 1, characterized in that, The reflective structure further includes a reflective film disposed between the first insulating layer and the metal layer or between the second insulating layer and the metal layer.

8. The electronic device as claimed in claim 7, characterized in that, The reflective film is made of either a white photoresist or a white adhesive.

9. The electronic device as claimed in claim 1, characterized in that, The material of the metal layer includes silver or aluminum.

10. The electronic device as claimed in claim 1, characterized in that, The metal layer includes a first metal layer and a second metal layer, the second metal layer being disposed on the first metal layer, and the first metal layer and the second metal layer being made of different materials.

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