A semiconductor laser element having a dirac spin zero band gap layer

Abstract

The application relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a Dirac spin zero band gap layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; the upper confinement layer and the electron blocking layer and the lower confinement layer have the Dirac spin zero band gap layer, and the thickness of the Dirac spin zero band gap layer is 5-5000 angstroms; the active layer is a periodic structure composed of a well layer and a barrier layer, and the period number is 3 >= m >= 1. The application forms a spin-up valence band and a spin-down conduction band, improves the matching and uniformity of the electron hole concentration of the active layer of the injected laser element, improves the laser gain uniformity, reduces the bipolar conduction effect, reduces the voltage of the laser element, thereby improving the stimulated radiation efficiency of the laser element, reducing the excitation threshold of the laser element, improving the optical power and the slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, specifically to a semiconductor laser element having a Dirac spin zero bandgap layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, have a small full width at half maximum (FW), and very high brightness; a single laser can have an output power in the W range. In contrast, nitride semiconductor LEDs emit spontaneous radiation, and a single LED has an output power in the mW range; 2) Lasers can operate at current densities of up to kA / cm². 2 The efficiency of LEDs is more than two orders of magnitude higher than that of nitride LEDs, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect; 3) LEDs emit spontaneous transition radiation without external influence, producing incoherent light from high energy levels to low energy levels, while lasers emit stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference of the electron transition, producing coherent light between the photon and the induced photon; 4) The principles are different: LEDs emit radiative recombination light under the action of external voltage, where electrons and holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met, which must satisfy the inversion distribution of charge carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, satisfying the threshold condition so that the gain is greater than the loss, and finally outputting laser light.

[0004] Nitride semiconductor lasers suffer from the following problems: 1) The Mg acceptor activation energy of p-type semiconductors is high, and the ionization efficiency is low. The hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility. Furthermore, the quantum well polarization field raises the hole injection barrier, leading to hole overflow from the active layer. This results in uneven hole injection and low efficiency, causing severe electron-hole asymmetry and mismatch in the quantum well, electron leakage, and carrier delocalization. Hole transport in the quantum well becomes more difficult, leading to uneven carrier injection and gain. Simultaneously, the laser gain spectrum broadens, and the peak gain decreases, resulting in increased threshold current and reduced slope efficiency. 2) The valence band difference increases, making hole transport in the quantum well more difficult, further contributing to uneven carrier injection and gain. 3) After laser lasing, the carrier concentration in the multi-quantum-well active region saturates, weakening the bipolar conductivity effect and increasing the series resistance of the laser, leading to an increase in laser voltage. Summary of the Invention

[0005] To overcome the shortcomings of existing technologies, this invention proposes a semiconductor laser element with a Dirac spin zero bandgap layer, which reduces the excitation threshold of the laser element and improves the optical power and slope efficiency of the laser element.

[0006] The technical solution adopted by this invention to solve its technical problem is:

[0007] The present invention discloses a semiconductor laser device with a Dirac spin zero bandgap layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A Dirac spin zero bandgap layer is provided between the upper confinement layer and the electron blocking layer and in the middle of the lower confinement layer. The thickness of the Dirac spin zero bandgap layer is 5~5000 angstroms. The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1.

[0008] Preferably, the Dirac spin-zero bandgap layer can remove the effective mass of electrons in the middle of the lower confinement layer of the laser element, and remove the effective mass of holes between the upper confinement layer and the electron blocking layer, to obtain massless electrons and massless holes with complete spin polarization. At the same time, the parabolic energy band distribution of the Dirac spin-zero bandgap layer can form a Dirac cone, which can control the spin polarization of the valence band of the conduction band, forming a spin-up valence band and a spin-down conduction band, thereby improving the matching and uniformity of the electron-hole concentration injected into the active layer of the laser element.

[0009] Preferably, the Dirac spin-zero bandgap layer is any one or a combination of LuPtBi@Mn2CoAl, YPtBi@HgTe:Mn, CePtBi@ZnVCoS, PrPtBi@ZnCrFeS, and NdPtBi@VO2.

[0010] Preferably, any combination of the Dirac spin-zero bandgap layers includes the following binary combination of core-shell nanosphere structures:

[0011] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn,

[0012] LuPtBi@Mn2CoAl / CePtBi@ZnVCoS,

[0013] LuPtBi@Mn2CoAl / PrPtBi@ZnCrFeS,

[0014] LuPtBi@Mn2CoAl / NdPtBi@VO2,

[0015] YPtBi@HgTe:Mn / CePtBi@ZnVCoS,

[0016] YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS,

[0017] YPtBi@HgTe:Mn / NdPtBi@VO2,

[0018] CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0019] CePtBi@ZnVCoS / NdPtBi@VO2,

[0020] PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0021] Preferably, any combination of the Dirac spin-zero bandgap layers includes the following ternary combination of core-shell nanosphere structures:

[0022] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS,

[0023] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS,

[0024] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / NdPtBi@VO2,

[0025] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0026] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2,

[0027] CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0028] Preferably, any combination of the Dirac spin-zero bandgap layers includes the following quaternary core-shell nanosphere structures:

[0029] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0030] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2,

[0031] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS / NdPtBi@VO2,

[0032] LuPtBi@Mn2CoAl / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2,

[0033] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0034] Preferably, any combination of the Dirac spin-zero bandgap layers includes the following five-element combination of core-shell nanosphere structures:

[0035] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0036] Preferably, the well layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10 to 80 angstroms; and the barrier layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0037] Preferably, the lower confining layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~5000nm and a Si doping concentration of 1E18~1E20cm³. -3 The lower and upper waveguide layers are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~1000nm and a Si doping concentration of 1E16~5E19 cm⁻¹. -3 .

[0038] Preferably, the electron blocking layer and the upper confinement layer are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 20~1000 nm and a Mg doping concentration of 1E18~1E20 cm⁻¹. -3 The substrate is made of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0039] The beneficial effects of this invention are as follows: The Dirac spin zero bandgap layer used in this invention can remove the effective mass of electrons in the middle of the lower confinement layer of the laser element, as well as the effective mass of holes between the upper confinement layer and the electron blocking layer, to obtain fully spin-polarized massless electrons and massless holes, achieving massless and lossless electron and hole transport, and improving the mobility of electrons and holes. At the same time, the parabolic energy band distribution of the Dirac spin zero bandgap layer can form a Dirac cone, which can control the spin polarization of the valence band of the conduction band, forming a spin-up valence band and a spin-down conduction band, improving the matching and uniformity of electron and hole concentrations injected into the active layer of the laser element, improving the uniformity of laser gain, alleviating the problem of active layer carrier concentration saturation, reducing bipolar conductivity effect, reducing the voltage of the laser element, thereby improving the stimulated emission efficiency of the laser element, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element. Attached Figure Description

[0040] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0041] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with a Dirac spin zero bandgap layer according to an embodiment of the present invention.

[0042] Figure reference numerals: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, electron blocking layer; 106, upper confinement layer; 107, Dirac spin zero bandgap layer. Detailed Implementation

[0043] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0044] like Figure 1 As shown, the semiconductor laser device with a Dirac spin zero bandgap layer according to the present invention comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A Dirac spin zero bandgap layer 107 is provided between the upper confinement layer 106 and the electron blocking layer 105 and in the middle of the lower confinement layer 101. The thickness of the Dirac spin zero bandgap layer is 5~5000 angstroms. The active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1.

[0045] In this invention, the Dirac spin zero bandgap layer 107 can remove the effective mass of electrons in the lower confinement layer 101 of the laser element and the effective mass of holes between the upper confinement layer 106 and the electron blocking layer 105, obtaining fully spin-polarized massless electrons and massless holes, realizing massless and lossless electron and hole transport, and improving the mobility of electrons and holes. At the same time, the parabolic energy band distribution of the Dirac spin zero bandgap layer 104 can form a Dirac cone, which can control the spin polarization of the valence band of the conduction band, forming a spin-up valence band and a spin-down conduction band, improving the matching and uniformity of the electron and hole concentration injected into the active layer of the laser element, improving the uniformity of laser gain, and alleviating the carrier concentration saturation problem of the active layer 103, reducing the bipolar conductivity effect, reducing the voltage of the laser element, thereby improving the stimulated emission efficiency of the laser element, reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0046] In a specific embodiment, the Dirac spin-zero bandgap layer 107 is any one or more combinations of LuPtBi@Mn2CoAl, YPtBi@HgTe:Mn, CePtBi@ZnVCoS, PrPtBi@ZnCrFeS, and NdPtBi@VO2. Specifically, it includes the following binary combination core-shell nanosphere structures, ternary combination core-shell nanosphere structures, quaternary combination core-shell nanosphere structures, and pentagonal combination core-shell nanosphere structures.

[0047] Any combination of the Dirac spin-zero bandgap layer 107 includes the following binary combinations of core-shell nanosphere structures:

[0048] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn,

[0049] LuPtBi@Mn2CoAl / CePtBi@ZnVCoS,

[0050] LuPtBi@Mn2CoAl / PrPtBi@ZnCrFeS,

[0051] LuPtBi@Mn2CoAl / NdPtBi@VO2,

[0052] YPtBi@HgTe:Mn / CePtBi@ZnVCoS,

[0053] YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS,

[0054] YPtBi@HgTe:Mn / NdPtBi@VO2,

[0055] CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0056] CePtBi@ZnVCoS / NdPtBi@VO2,

[0057] PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0058] Any combination of the Dirac spin-zero bandgap layer 107 includes the following ternary core-shell nanosphere structures:

[0059] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS,

[0060] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS,

[0061] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / NdPtBi@VO2,

[0062] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0063] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2,

[0064] CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0065] Any combination of the Dirac spin-zero bandgap layer 107 includes the following quaternary core-shell nanosphere structures:

[0066] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS,

[0067] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2,

[0068] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS / NdPtBi@VO2,

[0069] LuPtBi@Mn2CoAl / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2,

[0070] YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0071] Any combination of the Dirac spin-zero bandgap layer 107 includes the following five-element combination of core-shell nanosphere structures:

[0072] LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

[0073] In this invention, the well layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10 to 80 angstroms. The barrier layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0074] In this invention, the lower confinement layer 101 is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~5000nm and a Si doping concentration of 1E18~1E20cm³. -3 The lower waveguide layer 102 and the upper waveguide layer 104 are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~1000nm and a Si doping concentration of 1E16~5E19 cm⁻¹. -3 .

[0075] In this invention, the electron blocking layer 105 and the upper confinement layer 106 are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 20~1000nm and a Mg doping concentration of 1E18~1E20cm. -3 The substrate 100 is made of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0076] In a specific embodiment, compared with a conventional laser, the laser of the present invention reduces the excitation threshold of the laser element and improves the optical power and slope efficiency of the laser element.

[0077]

[0078] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor laser device having a Dirac spin zero bandgap layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: A Dirac spin zero bandgap layer (107) is provided between the upper confinement layer (106) and the electron blocking layer (105) and between the lower confinement layer (101), the thickness of which is 5 to 5000 angstroms; The Dirac spin zero bandgap layer (107) can remove the effective mass of electrons in the middle of the lower confinement layer (101) of the laser element, and remove the effective mass of holes between the upper confinement layer (106) and the electron blocking layer (105), to obtain massless electrons and massless holes with complete spin polarization. At the same time, the parabolic distribution of the energy bands of the Dirac spin zero bandgap layer (107) can form a Dirac cone, which can regulate the spin polarization of the valence band of the conduction band, forming a spin-up valence band and a spin-down conduction band, thereby improving the matching and uniformity of the electron-hole concentration injected into the active layer (103) of the laser element.

2. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 1, characterized in that: The Dirac spin-zero bandgap layer (107) is any one or more combinations of LuPtBi@Mn2CoAl, YPtBi@HgTe:Mn, CePtBi@ZnVCoS, PrPtBi@ZnCrFeS, and NdPtBi@VO2.

3. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 2, characterized in that: Any combination of the Dirac spin-zero bandgap layers (107) includes the following binary combinations of core-shell nanosphere structures: LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn, LuPtBi@Mn2CoAl / CePtBi@ZnVCoS, LuPtBi@Mn2CoAl / PrPtBi@ZnCrFeS, LuPtBi@Mn2CoAl / NdPtBi@VO2, YPtBi@HgTe:Mn / CePtBi@ZnVCoS, YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS, YPtBi@HgTe:Mn / NdPtBi@VO2, CePtBi@ZnVCoS / PrPtBi@ZnCrFeS, CePtBi@ZnVCoS / NdPtBi@VO2, PrPtBi@ZnCrFeS / NdPtBi@VO2.

4. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 2, characterized in that: Any combination of the Dirac spin-zero bandgap layer (107) includes the following ternary combination of core-shell nanosphere structures: LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS, LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS, LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / NdPtBi@VO2, YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS, YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2, CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

5. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 2, characterized in that: Any combination of the Dirac spin-zero bandgap layer (107) includes the following quaternary core-shell nanosphere structures: LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS, LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / NdPtBi@VO2, LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / PrPtBi@ZnCrFeS / NdPtBi@VO2, LuPtBi@Mn2CoAl / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2, YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

6. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 2, characterized in that: Any combination of the Dirac spin-zero bandgap layer (107) includes the following five-element combination of core-shell nanosphere structures: LuPtBi@Mn2CoAl / YPtBi@HgTe:Mn / CePtBi@ZnVCoS / PrPtBi@ZnCrFeS / NdPtBi@VO2.

7. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, with a period number of 3≥m≥1; the well layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10~80 angstroms; the barrier layer is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 10~120 angstroms.

8. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 1, characterized in that: The lower confinement layer (101) is any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~5000nm and a Si doping concentration of 1E18~1E20cm. -3 The lower waveguide layer (102) and upper waveguide layer (104) are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 50~1000nm and a Si doping concentration of 1E16~5E19 cm⁻¹. -3 .

9. A semiconductor laser element with a Dirac spin zero bandgap layer according to claim 1, characterized in that: The electron blocking layer (105) and the upper confinement layer (106) are any one or more combinations of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness of 20~1000nm and a Mg doping concentration of 1E18~1E20 cm⁻¹. -3 The substrate (100) is made of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrates.

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