A solar cell and a photovoltaic module
By setting a structure with a specific width and roughness on the back surface of the solar cell substrate and using alternating layers of dielectric and doped layers, the limitations of TOPCon cells in reverse saturation current and cell short-current and turn-on voltage improvement are solved, achieving higher photoelectric conversion efficiency and electrical performance parameters.
CN117423758BActive Publication Date: 2026-11-06ZHEJIANG JINKO SOLAR CO LTD +1
Patent Information
- Application Number
- CN202210811369.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-07-11
- Publication Date
- 2026-11-06
- Estimated Expiration
- 2042-07-11
AI Technical Summary
Technical Problem
Existing TOPCon batteries have limitations in reducing reverse saturation current and improving battery short-current and opening voltage.
Method used
By setting a structure with a width of 1-10 μm and a roughness of 100-500 nm on the back surface of the substrate, and using multiple dielectric layers and doped layers alternately, combined with optimized doping concentration gradient and thickness ratio, a high-quality passivated contact structure is formed, reducing the interface state density and improving the carrier transport efficiency.
Benefits of technology
This achieves lower reverse saturation current density and higher passivation effect, improving the photoelectric conversion efficiency and electrical performance parameters of solar cells.
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Smart Images
Figure CN117423758B_ABST
Abstract
The application discloses a solar cell and a photovoltaic module, the solar cell comprising: a substrate having a front surface and a back surface, the front surface and the back surface being oppositely arranged along a first direction; a dielectric layer located on the back surface of the substrate; a first doped layer located on the surface of the dielectric layer; a first grid line electrode in electrical contact with the first doped layer; wherein: the width of the back surface of the substrate tower along a second direction is 1-10 um, the plane where the second direction is located is perpendicular to the plane where the first direction is located; the roughness of the back surface of the substrate comprises 100-500 nm. Compared with the prior art, by setting the width of the substrate to 1-10 um and the root mean square roughness of the substrate surface to 100-500 nm, a high-quality dielectric layer can be obtained, the interface state density between the substrate and the dielectric layer is reduced, the reverse saturation current density is reduced, and a better passivation effect can be obtained.
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Citation Information
Patent Citations
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