Component with improved properties with respect to wavelength stretching

Abstract

The invention discloses an assembly (10) having a carrier (9) and exactly two semiconductor chips (10C) arranged side by side on the carrier (9), wherein the exactly two semiconductor chips (10C) are each configured as a dual emitter having exactly two emission regions (R) or as a triple emitter having exactly three emission regions (R) and thus differ from a single emitter. The emission regions (R) of the assembly (10) correspond to the exactly two semiconductor chips (10C), wherein the exactly two semiconductor chips (10C) are laser diodes each having a ridge which defines an emission region (R). The exactly two semiconductor chips (10C) are electrically contacted via the carrier (9).

Description

Technical Field

[0001] This invention relates to a component. Background Technology

[0002] The bandwidth of laser beams plays a decisive role in diffractive waveguides. The small bandwidth of individual laser beams passing through the waveguide produces optically visible artificial damage. This artificial damage is visible and disruptive to users of AR (Augmented Reality) glasses, VR (Virtual Reality) glasses, or data glasses.

[0003] By shifting the individual emission regions of the quad emitter by approximately a few nanometers, such as 2.5 nm, the bandwidth expansion can be adjusted. However, this method incurs significant overhead in production and results in substantial output loss. Summary of the Invention

[0004] The object of the present invention is to provide a component with improved characteristics regarding wavelength spread, which is particularly useful for improving image quality, for example, AR glasses, VR glasses, or data glasses.

[0005] This objective is achieved by the component as described in the independent claim. Further designs and modifications of the component are the subject of the dependent claims.

[0006] With appropriate chip design, multiple emitters, such as a quad emitter, can be divided into smaller emitters, such as two dual emitters. Compared to a quad emitter, the spacing between the emission regions can remain unchanged. Dividing into two laser diodes results in a significantly simplified manufacturing process and thus provides a simpler way to extend the bandwidth, particularly to 10nm, i.e., 10nm+ / -5nm, 10nm+ / -3nm, 10nm+ / -3nm, or 10nm+ / -1nm, in order to reduce artificial damage in the waveguide.

[0007] In at least one embodiment of the component, it has multiple emission regions. In particular, the emission regions are associated with at least or exactly two semiconductor chips.

[0008] In at least one embodiment of the component, it has at least two semiconductor chips. These two semiconductor chips are, in particular, two emitters or two laser diodes. Specifically, the emitters or laser diodes are different from single emitters. The semiconductor chips can be dual or triple emitters. The semiconductor chips can, for example, have two or three ridges. The semiconductor chips of the component can be arranged side by side on a carrier. If the semiconductor chips have two ridges, then it is referred to as a dual or dual emitter.

[0009] In at least another embodiment of the component, it has a carrier and exactly two semiconductor chips arranged side-by-side on the carrier. Each of the exactly two semiconductor chips is configured as a dual emitter with exactly two emission regions or as a triple emitter with exactly three emission regions, and is therefore different from a single emitter. The emission region of the component, i.e., the entire reflection region, is allocated to the exactly two semiconductor chips. The exactly two semiconductor chips are laser diodes, each having a ridge, wherein the ridge defines the emission region. The exactly two semiconductor chips are electrically contacted via the carrier.

[0010] Specifically, the emission region is defined by a so-called ridge region. Components or semiconductor chips having such ridge regions are also called ridge lasers or strip lasers. Such components or semiconductor chips can have one or more strip waveguides formed in a second semiconductor region of the respective semiconductor chip. These strip waveguides can be designed as one-dimensional waveguides along the laser radiation generated in the active region of the semiconductor chip. If the semiconductor chip has two or more emission regions, then the semiconductor chip can have two or more such strip waveguides.

[0011] The emitting region or strip waveguide extends, for example, along the transverse direction of the semiconductor. In particular, the strip waveguide is implemented in the form of a tab protruding along the vertical direction. If the semiconductor chip has multiple emitting regions, then the semiconductor chip has multiple strip waveguides arranged side by side in a top view, which are particularly in the form of protruding tabs arranged side by side.

[0012] The lateral direction is understood as the direction that extends particularly parallel to the main extension surface of the semiconductor chip or carrier. The vertical direction is understood as the direction that is particularly perpendicular to the orientation of the main extension surface of the semiconductor chip or carrier. The vertical and lateral directions are orthogonal to each other.

[0013] In ridge lasers or strip lasers, laser radiation is coupled out from the sides of the ridge laser or strip laser. The generated laser radiation propagates essentially parallel to the strip waveguide in the transverse direction.

[0014] According to at least one embodiment of the component, the semiconductor chip of the component has a connection pad. The semiconductor chip or transmitter can be contacted from the outside via the connection pad, for example, via a contact structure of a carrier.

[0015] Specifically, the connection pads are located on the back side of the semiconductor chip. For example, the connection pads are disposed between the carrier and the semiconductor body of the semiconductor chip. The semiconductor chip can have vias that extend vertically, for example, through at least one semiconductor region of the semiconductor body and are electrically connected to one of the connection pads, respectively.

[0016] According to at least one embodiment of the component, the semiconductor chip is electrically contacted via a carrier. For example, the carrier has a contact structure that is electrically contacted with the connection pads of the semiconductor chip. The contact structure is capable of electrically contacting all the connection pads of the semiconductor chip.

[0017] According to at least one embodiment of the component, the number of connection pads of the semiconductor or transmitter is equal to the number of ridges or emission regions of the associated semiconductor chip or transmitter.

[0018] According to at least one embodiment of the component, the component has at least two, in particular exactly two dual or triple transmitters.

[0019] According to at least one embodiment of the component, the transmitters are arranged side by side to achieve wavelength expansion of 10nm+ / -5nm, 10nm+ / -3nm, or 10nm+ / -1nm.

[0020] In at least one embodiment of AR glasses, VR glasses, or data glasses, the glasses have the components described herein. Attached Figure Description

[0021] Other implementations and improvements of the component will be discussed in the following sections. Figures 1 to 5 The illustrated embodiments are derived from this. The accompanying drawings show:

[0022] Figure 1 The diagram shows a typical assembly with a quadruple transmitter, and

[0023] Figure 2 , Figure 3 , Figure 4 and Figure 5 Various embodiments of a component with dual transmitters are shown.

[0024] Components that are identical, similar, or have the same function are labeled with the same reference numerals in the accompanying drawings. The drawings are schematic and therefore not necessarily to scale. Specifically, relatively small components and, in particular, layer thicknesses may be exaggerated for the purpose of illustration. Detailed Implementation

[0025] Figure 1 An assembly 10 with a quad emitter C is shown. The quad emitter C has four ridges R. Different ridges can be configured to generate electromagnetic radiation of different wavelengths. It is also possible to configure different ridges R to generate electromagnetic radiation with substantially the same peak wavelength. For example, the ridges can be configured to generate laser radiation. Such an assembly or such a quad emitter can have a large output loss because all four emission regions R in the spectrum and in total should have a predetermined desired wavelength expansion of approximately 10 nm. Therefore, a large overhead is required to achieve four different wavelengths on the quad emitter.

[0026] according to Figure 1 Component 10 or the quad emitter C has four connection pads AP, particularly on the rear side of the chip, each connection pad being configured for electrical contact, for example, with the n or p contacts of the ridge R. The ridges R are laterally spaced from each other, for example, by a lateral spacing of approximately 50 μm. Component 10 or the quad emitter C has a lateral width B, for example, 300 μm.

[0027] according to Figure 2 The component 10 has two dual emitters LC and RC or two separate semiconductor chips 10C. The semiconductor chips 10C are spatially spaced from each other along the lateral direction through an intermediate region D or a lateral spacing.

[0028] In particular, Figure 1 The quad emitter C shown can be divided into two dual emitters, LC and RC. The lateral width B is bisected while maintaining the lateral spacing A between the ridges R. In this case, only two, not four, emission regions R, i.e., two ridges R instead of four, should be in the spectrum. This results in a higher output because the maximum emission region in the wavelength is shifted. Therefore, significantly less overhead is required in manufacturing each dual emitter LC and RC. Each of the dual emitters LC and RC can be implemented as a separate semiconductor chip 10C. Because the lateral spacing between the semiconductor chips 10C can be varied, the desired bandwidth expansion can be achieved in a simple manner and method.

[0029] Therefore and Figure 1 compared to, Figure 2 Two dual-emitter LC and RC circuits, specifically two semiconductor chips 10C, are shown as a replacement for a single quadruple emitter. The fabrication of separate dual-emitter LC and RC circuits is simplified because no artificial trenches are created, as in a quadruple emitter C, for bandwidth expansion. Figure 1 Compared to the quad emitter C shown, each of the separate semiconductor chips 10C has a lateral width NB, the size of which is... Figure 1 The width of the quadruple transmitter C shown is half its lateral width.

[0030] Figure 2 Exemplary examples illustrate that each of the dual transmitters LC and RC can have multiple through holes V. Specifically, each through hole V provides an electrical contact for one of the ridges R. For example, the through hole V extends along a lateral extension of the entire associated ridge R. The number of through holes V is, for example, equal to the number of connecting pads AP and / or the number of ridges R. In other words, each ridge R has a separately corresponding through hole V and / or a separately corresponding connecting pad AP.

[0031] Semiconductor chip 10C may have a first semiconductor layer, a second semiconductor layer, and an active region disposed between the first and second semiconductor layers. The active region, during operation of semiconductor chip 10C, is configured to generate electromagnetic radiation, particularly coherent radiation. In a top view of semiconductor chip 10C, a via V may overlap with a sub-region of the active region. Due to this overlap, electromagnetic radiation is generated primarily within the sub-region of the active region that overlaps with the via V.

[0032] If a semiconductor chip 10C has two ridges R, and the ridges are electrically connected via two associated vias V and two associated connection pads AP, then the semiconductor chip 10C can generate electromagnetic radiation in two different sub-regions of the active region. The generated electromagnetic radiation is, for example, laser radiation. Specifically, the generated laser radiation has substantially the same peak wavelength. The laser radiation S can be coupled out from the side of the semiconductor chip 10C. This is, for example, in... Figure 5 It is shown schematically in the diagram.

[0033] Figure 2 The illustrated component 10 has two semiconductor chips 10C, each chip having two emission regions R, with a lateral spacing A between the emission regions. For example, the lateral spacing A is given by the distance between two emission points of the two emission regions on the side of the semiconductor chip 10C or on the side of the component 10. For example, the lateral spacing A is between 20 μm and 60 μm and includes both 20 μm and 60 μm, such as 25 μm ± 5 μm, 30 μm ± 5 μm, 35 μm ± 5 μm, or 50 μm ± 5 μm. If the component 10 has two or more semiconductor chips 10C, then the semiconductor chips 10 can have the same lateral spacing A between adjacent regions in the emission regions R.

[0034] Specifically, component 10 has exactly two semiconductor chips 10C, each configured as a dual emitter LC or RC with exactly two emission regions R. The semiconductor chips 10C are each configured as dual emitters. Figure 2 Unlike other semiconductor chips, each semiconductor chip 10C can be configured as a triple emitter with exactly three emission regions R. The emission regions R of the same semiconductor chip 10C or all semiconductor chips 10C emitting radiation in component 10 can be configured to generate coherent radiation with the same or different peak wavelengths.

[0035] It is possible for component 10 to have two, three, or more semiconductor chips 10C, which are designed to be different or the same type. If the semiconductor chips 10C are designed to be the same type, they can have the same semiconductor structure. It is possible for the semiconductor bodies of semiconductor chips 10C with the same structure to be made of the same material. For example, Figure 2The semiconductor body of the semiconductor chip 10C shown can be made of, for example... Figure 1 The semiconductor chips 10C shown are made from a common semiconductor body, for example, by a sorting process. Each semiconductor chip 10C can also have the same number of emission regions R. If the semiconductor chips 10C are constructed differently from each other, they can have different numbers of emission regions R and / or different semiconductor structures, or be made from different semiconductor materials.

[0036] like Figure 1 or Figure 2 As schematically shown, the emission regions R of identical semiconductor chips 10C extend parallel to each other. The emission regions R of identical semiconductor chips 10C are spatially spaced from each other by a lateral spacing A, wherein the lateral spacing A can be between 20 μm and 60 μm and includes both 20 μm and 60 μm. For example, the lateral spacing A is 30 μm or 50 μm.

[0037] Two semiconductor chips 10C are spatially separated from each other by a lateral intermediate region D or a lateral spacing. The width of the lateral intermediate region D can be between 5 μm and 50 μm, and includes both 5 μm and 50 μm. The lateral spacing between two adjacent semiconductor chips 10C can be greater than or less than the lateral spacing A between two adjacent emitter regions R. In particular, the intermediate region between two adjacent semiconductor chips 10C is configured to adjust the lateral spacing between two externally adjacent emitter regions R of the adjacent semiconductor chips 10C.

[0038] What is possible is that component 10 has equidistant lateral spacing DA for the entire emission region R. For example, in... Figure 3 The diagram illustrates this schematically. In this case, two adjacent emitter regions of the same semiconductor chip 10C or different semiconductor chips 10C have the same lateral spacing DA, particularly down to a few nanometers, such as a maximum of 5nm, 3nm, or 1nm in manufacturing tolerance. In other words, two arbitrary adjacent emitter regions R of the component have the same spacing DA. For example, equidistant spacing DA is 30μm±5μm, 35μm±5μm, 40μm±5μm, 45μm±5μm, or 50μm±5μm.

[0039] Components Figure 3 and Figure 4 The embodiments shown basically correspond to the components. Figure 2 The example shown.

[0040] according to Figure 3The lateral spacing A or the equidistant lateral distribution spacing DA can be 50 μm. The intermediate region D between two adjacent semiconductor chips 10C can be 5 μm. If component 10 has two semiconductor chips 10C each having a total of four emission regions R, then the four emission regions R can be distributed over a lateral region GA of approximately 150 μm. Therefore, the entire region GA gives the region width in which the emission regions R of component 10, specifically all of the emission regions R, are contained. Each of the semiconductor chips 10C can have a lateral width NB of approximately 150 μm. All the geometry of width and / or spacing given in this disclosure can have manufacturing tolerances of a few micrometers, such as up to 5 μm, 3 μm, 2 μm, or 1 μm.

[0041] according to Figure 3 ,For example Figure 1 The n ridges R of the semiconductor chip C or laser diode shown are distributed on groups of n / 2 ridges R on two separate semiconductor chips / laser diodes 10C. Specifically, the equidistant distribution spacing DA for all n ridges R of the two separate semiconductor chips / laser diodes, especially after mounting on the carrier 9 / heat sink, is shown (see [reference]). Figure 5 The number of ridges R, n, can be 6 instead of 4.

[0042] according to Figure 4 Each semiconductor chip 10C has the same lateral spacing A between its corresponding emitter regions R. Two adjacent emitter regions R of each semiconductor chip 10C are spatially separated by a lateral intermediate spacing ZA. The lateral intermediate spacing ZA between two adjacent emitter regions R of different semiconductor chips 10Cs differs from the lateral spacing A between two adjacent emitter regions R of the same semiconductor chip 10C. For example, the lateral intermediate spacing ZA between two adjacent emitter regions R of different semiconductor chips 10Cs may be greater than or less than the lateral spacing A between two adjacent emitter regions R of the same semiconductor chip 10C.

[0043] according to Figure 4 Component 10 has a lateral spacing A between two adjacent emitter regions R of the same semiconductor chip 10C, which can be 30 μm. The lateral spacing ZA between two adjacent emitter regions R of adjacent semiconductor chips 10C can be 70 μm. The width of the intermediate region can be 45 μm. The width of the entire region GA used to distribute and place the four emitter regions R can also be approximately 150 μm. Each of the semiconductor chips 10C can have a lateral width NB of approximately 150 μm.

[0044] according to Figure 4 ,For example Figure 1The semiconductor chip C or laser diode shown has n ridges R distributed on two separate semiconductor chips / laser diodes 10C, each with n / 2 ridges R. The lateral spacing of the outer ridges R remains constant (e.g., GA = 150 μm). Figure 3 Unlike other methods, the inner ridge R moves closer to the outer ridge (e.g., spacing A = 30 μm) to achieve a larger structural space between the two semiconductor chips / laser diodes 10C.

[0045] In particular, Figure 3 and Figure 4 A specific implementation of component 10 with two dual emitters, LC and RC, each with a bandwidth of 10 nm, is shown. However, the description of component 10 herein is not intended to be restrictive. Figure 3 and Figure 4 The given description.

[0046] and Figures 2 to 4 Unlike other carriers, the dual transmitters LC and RC are arranged on carrier 9, particularly on the common carrier 9 (see, for example, [link to relevant documentation]). Figure 5 In addition, with Figures 2 to 4 Unlike other components, component 10 may have two triple emitters or even two quadruple emitters. The emitters, i.e., semiconductor chips 10C, can be securely mounted on a carrier, particularly by soldering. A pre-defined spacing A or region D between the emission regions R, i.e., between the ridges R, or between the emitters or semiconductors 10C, can be maintained within manufacturing tolerances of, for example, + / - 5 μm or + / - 2 μm. The spacing A between the ridges R can be approximately 50 μm or less. Wavelength expansion of approximately 10 nm + / - 5 nm, 10 nm + / - 3 nm, or 10 nm + / - 1 nm can be achieved using combinations of individual dual or triple emitters.

[0047] For example, to achieve a wider spectral width, the spectra of each ridge R overlap with a small wavelength offset. A spectral width (wavelength expansion) of approximately 10 nm (FWHM) is often desired. To achieve this value, the wavelength offset between individual resonators, between emitters, between emission regions, or between ridges can be approximately 2 μm–5 μm.

[0048] Component 10 can have multiple resonators, wherein the ridges are arranged side by side to overlap the spectra of the individual ridges with wavelength deviations during operation of component 10. Specifically, the wavelength deviations are between 2 μm and 5 μm between the individual resonators and include both 2 μm and 5 μm. This enables a spectral width of 10 nm ± 5 nm.

[0049] Figure 5An assembly 10 is shown having at least two semiconductor chips 10C on a carrier 9. The semiconductor chips 10C are electrically contacted from the outside via the carrier 9, particularly via the contact structure of the carrier 9. The contact structure of the carrier 9 is capable of matching the arrangement of the connection pads AP on the rear side of the semiconductor chips 10C, or vice versa.

[0050] The number of connection pads AP of the semiconductor chip 10C can be equal to the number of emitter regions R of the associated semiconductor chip 10C. Specifically, the emitter regions R are implemented as ridges. The semiconductor chip 10C can have vias V, each providing an electrical contact for the ridge R. The vias V can extend along the lateral extension of the associated ridge R. Specifically, the location of the vias V defines selected sub-regions of the corresponding active region of the semiconductor chip 10C, in which charge carriers are suitably placed, such that the selected sub-regions of the active region are configured to generate electromagnetic radiation during operation of the assembly 10. For example, the number of vias V is consistent with the number of connection pads AP and / or the number of ridges R.

[0051] When component 10 is running, the emission region R is configured to generate electromagnetic radiation that can be coupled laterally from component 10 along the side of component 10, i.e., the side of semiconductor chip 10C. For example, the emission regions R are arranged side by side to achieve a wavelength extension of 10 nm + / - 5 nm.

[0052] By employing dual emitters, it is particularly possible to achieve a natural shift in the wavelength of the emission region / ridge R per semiconductor chip 10C, such as per laser diode LC or RC, and especially a desired bandwidth expansion. Specifically, the natural shift in bandwidth is achieved through a short, pre-defined spacing between the emission region / ridge R and the chip edge. Therefore, this disclosure provides a simpler way to achieve the desired bandwidth expansion compared to quadruple emitters that involve the high overhead of shifting the wavelength through etched trenches.

[0053] This application claims priority to German Application 10 2021 115 230.5 and German Application 10 2021 123 010.1, the disclosures of which are incorporated herein by reference.

[0054] This invention is not limited to the description of the embodiments. Rather, the invention includes each new feature and each new combination of features specifically included in the claims, even if the feature or combination itself is not described in detail in the claims or embodiments.

[0055] Reference number list

[0056] 10 components

[0057] C semiconductor chip, multiple transmitters

[0058] 10C, LC semiconductor chip

[0059] 10C, RC semiconductor chip

[0060] 9. Carrier

[0061] A. The spacing between two adjacent emitter regions on the same semiconductor chip

[0062] AP connection pad

[0063] B. Width of semiconductor chip / multiple emitter

[0064] D. Spacing / intermediate area between two adjacent semiconductor chips

[0065] GA emission area width

[0066] Width of NB semiconductor chip / dual transmitter

[0067] R launch area, spine

[0068] S radiation

[0069] V through hole

[0070] ZA is the spacing between two adjacent emitter regions of adjacent semiconductor chips.

Claims

1. A component (10) having a carrier (9) and exactly two semiconductor chips (10C) disposed side-by-side on the carrier (9), each semiconductor chip being configured as a dual emitter having exactly two emission regions (R) or each being configured as a triple emitter having exactly three emission regions (R), thereby distinguishing the semiconductor chips from single emitters, wherein, - The emission region (R) of the component (10) is assigned to exactly two of the semiconductor chips (10C). - Both of the semiconductor chips (10C) are laser diodes, each having a ridge that defines the emission region (R). -The two semiconductor chips (10C) are electrically in contact via the carrier (9). The emission regions (R) of the same semiconductor chip (10C) or all of the semiconductor chips (10C) emitting radiation in the component (10) are configured to generate coherent radiation with different peak wavelengths, and The two semiconductor chips (10C) are spatially spaced apart by a lateral intermediate region (D), wherein the width of the lateral intermediate region (D) is between 5µm and 50µm and includes both 5µm and 50µm, and the emission regions (R) are arranged side by side to achieve a wavelength extension of 10nm+ / -5nm.

2. The component (10) according to claim 1, wherein, The two semiconductor chips (10C) are each configured as dual emitters having exactly two of the emission regions (R).

3. The component (10) according to claim 1, wherein, Each of the two semiconductor chips (10C) is configured as a triple emitter having exactly three of the three emission regions (R).

4. The component (10) according to claim 1, wherein, The two semiconductor chips (10C) happen to be designed to be the same type.

5. The component (10) according to claim 1, wherein, The emission regions (R) of the same semiconductor chip (10C) extend parallel to each other and are spatially spaced apart by a lateral spacing (A), wherein the lateral spacing (A) is between 20µm and 60µm and includes 20µm and 60µm.

6. The component (10) according to any one of claims 1 to 5, wherein, The component has an equidistant lateral spacing (DA) for the entire emission area (R).

7. The component (10) according to any one of claims 1 to 5, wherein, Both semiconductor chips (10C) have the same lateral spacing (A) between their respective emission regions (R), wherein, - Two adjacent emitter regions (R) of different semiconductor chips (10C) are spatially separated from each other by a lateral midpoint spacing (ZA), and - The lateral spacing (ZA) between two adjacent emitter regions (R) of different semiconductor chips (10C) is different from the lateral spacing (A) between two adjacent emitter regions (R) of the same semiconductor chip (10C).

8. The component (10) according to claim 7, wherein, The lateral spacing (ZA) between two adjacent emitter regions (R) of different semiconductor chips (10C) is greater than the lateral spacing (A) between two adjacent emitter regions (R) of the same semiconductor chip (10C).

9. The component (10) according to any one of claims 1 to 5, wherein, Each of the two semiconductor chips (10C) has a connection pad (AP), wherein the two semiconductor chips (10C) are electrically connected to the contact structure of the carrier (9) via the connection pad (AP).

10. The component (10) according to claim 9, wherein, The number of connection pads (APs) of a semiconductor chip (10C) is equal to the number of emitter regions (Rs) associated with the semiconductor chip (10C).

11. The component (10) according to claim 9, wherein, - The semiconductor chip (10C) has through-holes (V), each of which is configured for electrical contact with one of the ridges. - The through-hole (V) extends along the overall lateral extension of the associated ridge, and - The number of through holes (V) is consistent with the number of connecting pads (AP) and / or the number of ridges.

12. The component (10) according to any one of claims 1 to 5, having a plurality of resonators, wherein, The emission regions (R) are arranged side by side such that the spectra of each emission region (R) are superimposed with wavelength offset during operation of the component (10), and the spacing between each resonator on the same semiconductor chip (10C) is between 2µm and 5µm and includes 2µm and 5µm, thereby achieving a spectral width of 10nm+ / -5nm.

13. An AR glasses, VR glasses or data glasses having a component (10) according to any one of claims 1 to 5.

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