一种双圆台衬底托辅助异质外延大尺寸单晶金刚石的方法
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JILIN UNIVERSITY
- Filing Date
- 2023-10-27
- Publication Date
- 2026-07-17
AI Technical Summary
When preparing large-size single-crystal diamonds using heteroepitaxial growth, the uneven temperature distribution on the sample surface leads to poor diamond growth quality and potential sample breakage.
A dual-frustum substrate-assisted heteroepitaxial method is designed. The electric field distribution inside the cavity is simulated using Comsol software, the structural parameters of the substrate holder are optimized, the electric field uniformity on the sample stage surface is ensured, thereby improving temperature uniformity and ultimately obtaining high-quality single-crystal diamond.
This method achieves a uniform distribution of electric field and temperature on the sample stage surface, improves the electric field strength of the cavity, optimizes the diamond growth temperature, and obtains high-quality, large-size single-crystal diamonds.
Smart Images
Figure CN117431622B_ABST