A method for simulating charge accumulation in dielectric under space electron radiation and high pressure environment

Abstract

The application discloses a method for simulating charge accumulation in a medium under space electronic radiation and high-voltage environment. The method comprehensively considers factors such as incident electrons, externally applied high-voltage electric field, and electric field under the influence of charge transport migration, and simulates and tracks the particle injection, collision scattering and transport process in the medium of a complex electromechanical structure such as a space high-voltage power electromechanical component. The application can realize the calculation and tracking of the dynamic process of charge accumulation in the medium of the complex electromechanical structure under the long-term effect of the coupling environment of space electronic radiation and high working voltage.

Description

Technical Field

[0001] This application relates to the technical field of charge accumulation simulation, and in particular to a method for simulating charge accumulation in a medium under space electron radiation and high pressure environment. Background Technology

[0002] With the development of space technology, the demand for high-power power supply systems for spacecraft is increasing. For power supply to high-power spacecraft of tens or even hundreds of kilowatts, high-voltage transmission is an effective way to reduce energy transmission losses and cable weight. When a high-voltage busbar system is used in space, the coupling opportunities between the complex insulation structure of high-voltage power electromechanical components and space electron radiation and high operating voltage increase. The charge accumulation process inside the complex insulation medium becomes more complicated, and the charging and discharging problems become more prominent.

[0003] Modeling and simulation are important approaches and methods for spacecraft charging and discharging research. Each stage of spacecraft radiation effect research involves modeling and simulation, simulation experiments, and on-orbit testing. Using numerical simulation to evaluate the charge level of complex insulation structures of high-voltage power electromechanical components in space is a cost-effective and feasible method. It saves a significant amount of testing costs and greatly accelerates the spacecraft development process. It can also guide the design of insulation schemes for complex electromechanical component structures under high-voltage conditions.

[0004] The charging of space dielectric materials is a highly complex physical process. Numerical simulations of the charge accumulation process within the dielectric of complex, intricate structures of high-voltage power electromechanical components coupled with space electron radiation and a high operating voltage environment require understanding the complex structural and electric field evolution processes under the combined effects of space electron radiation and high operating voltage. However, existing simulation methods do not address the impact of externally applied electric fields and their variations on the long-step motion of particles within complex structures. They lack detailed numerical simulations of the influence of electric field evolution on the forces acting on charged particles, their velocity at the next moment, and their position. In other words, existing methods are insufficient to reflect the particle motion processes and electric field distortions within complex structural dielectrics caused by the coupling of space electron radiation and high-voltage electric fields, making it difficult to simulate realistic charging conditions. Summary of the Invention

[0005] This invention provides a simulation method for the accumulation of charge within a dielectric material under space electron radiation and high voltage conditions. In particular, for complex working environments where space electron radiation is coupled with high operating voltage, this method provides a simulation approach for simulating the charge accumulation process within the dielectric material of complex and delicate structures of space high-voltage power electromechanical components.

[0006] Firstly, a method for simulating space electron radiation and charge accumulation in a dielectric under high pressure is provided, including:

[0007] S1: Perform complex structure modeling and initialize the coupled working environment;

[0008] S2: Mesh discretization process, defining the spatial mesh and macroparticles used in the simulation;

[0009] S3: In the i-th step, the charge of the macroparticles in the grid is distributed to the grid points to obtain the charge density distribution;

[0010] S4: When i = 1, based on the charge density distribution and the corresponding boundary conditions, the electric potential distribution is obtained by solving the Poisson equation on the grid, and then the electric field distribution is calculated; if i > 1, skip this step.

[0011] S5: When i = 1, the electric field at the grid point obtained in S4 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle; when i > 1, the electric field at the grid point obtained in S11 at step i-1 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle.

[0012] S6: In the i-th step, based on the forces acting on the macroparticle, use the classical or relativistic equations of motion to calculate the velocity and position of the macroparticle at the next moment, and then calculate the kinetic energy of the macroparticle.

[0013] S7: In the i-th step, based on the boundary condition assumptions, process the state of the charged particle cluster after it moves to the boundary.

[0014] S8: In the i-th step, calculate the collision scattering process of all injected high-energy electrons at the current time step.

[0015] S9: In the i-th step, complete the collision motion tracking calculation of all macroparticles;

[0016] S10: In the i-th step, the uncaptured electrons enter the transport process to obtain the electric field distribution inside the material;

[0017] S11: Determine if the conditions for terminating the simulation have been met. If they have, terminate the simulation; otherwise, set i = i + 1 and return to S3.

[0018] In conjunction with the first aspect, in some implementations of the first aspect, the boundary conditions in S4 include an applied high-voltage electric field.

[0019] In conjunction with the first aspect, in some implementations of the first aspect, the components used in the method include part A, part B, and part C. Part A and part B are two parts with different properties, and part B and part C are two parts with different properties. Part A is provided with the boundary condition of an external high-voltage electric field. Part A is metal, part B is vacuum, and part C is a medium. Part B is located between part A and part C. Part C is the part of the grid points for macro-particle interpolation in S3. According to the relationship between part A and part B, the potential of the grid points at the boundary between part A and part B is set. According to the relationship between part B and part C, the potential of the grid points at the boundary between part B and part C is set. In S4, the Poisson equation is solved for part B and part C respectively to obtain the potential distribution, and then the electric field distribution of part B and part C is calculated.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, S2 uses a two-dimensional position space and a three-dimensional velocity space for particle mesh discretization.

[0021] In conjunction with the first aspect, in some implementations of the first aspect, S3 uses a first-order weighting method to perform linear interpolation to obtain the charge density at the grid points.

[0022] In conjunction with the first aspect, in some implementations of the first aspect, the solution to the Poisson equation at the current moment is obtained in S4 using the difference iteration method.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, S5 uses a first-order weighting method to perform inverse linear interpolation to obtain the electric field at the position of the macroparticle.

[0024] In conjunction with the first aspect, in some implementations of the first aspect, the boundary conditions in S7 include four cases: negative potential blocking effect, boundary barrier of the overall structure, boundary treatment of the intersection of the medium and the metal material involved in the complex structure, and boundary treatment of the intersection of the medium and the vacuum region inside the structure involved in the complex structure.

[0025] In conjunction with the first aspect, in certain implementations of the first aspect, the transport processing in S10 calculates the potential distribution inside the material by solving the current conduction equation, the current continuity equation, and the Poisson equation, thereby obtaining the electric field distribution, including:

[0026] The current conduction equation is calculated using an upwind algorithm. The conduction equation is then substituted into the current continuity equation. The solution of the current continuity equation is performed in two steps. In the first step, only the conduction of electronic carriers due to the electric field is considered, ignoring the carrier density changes caused by trapping and detrapping behaviors. In the second step, the various carrier density changes caused by carrier conduction behaviors are ignored, and the source term is calculated separately to calculate the carrier density changes in the strata caused by behaviors other than conduction. Finally, the Poisson equation is solved based on the charge density distribution.

[0027] Secondly, a method for simulating space electron radiation and charge accumulation in a dielectric under high pressure is provided, including:

[0028] Perform complex structure modeling and coupling working environment initialization;

[0029] Mesh discretization is performed to define the spatial mesh and macroparticles used in the simulation.

[0030] The charge density distribution is obtained by distributing the charge of macroparticles within the grid to the grid points;

[0031] Based on the charge density distribution and corresponding boundary conditions, the potential distribution is obtained by solving the Poisson equation on the grid, and then the electric field distribution is calculated. The boundary conditions include an applied high-voltage electric field. The components used in this method include part A, part B, and part C. Parts A and B are two parts with different properties, and parts B and C are two parts with different properties. Part A is provided with the boundary condition of an applied high-voltage electric field. Part A is metal, part B is vacuum, and part C is a dielectric. Part B is located between parts A and C, and part C is the part of the grid points used for macro-particle interpolation in S3. According to the relationship between parts A and B, the potential of the grid points at the boundary between parts A and B is set. According to the relationship between parts B and C, the potential of the grid points at the boundary between parts B and C is set. The Poisson equation is solved for parts B and C respectively to obtain the potential distribution, and then the electric field distribution of parts B and C is calculated.

[0032] The electric field at the obtained grid points is distributed to the electric field at the position of the macroparticle, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle.

[0033] Based on the forces acting on the macroparticle, the velocity and position of the macroparticle at the next moment are calculated using the equations of motion for classical or relativistic particles, and then the kinetic energy of the macroparticle is calculated.

[0034] Based on the boundary condition assumptions, the state of the charged particle cluster after it has moved to the boundary is handled;

[0035] Calculate and track the collision scattering process of all injected high-energy electrons at the current time step;

[0036] Complete the collision motion tracking calculations for all macroparticles;

[0037] Determine if the conditions for terminating the simulation have been met. If they have, terminate the simulation; otherwise, proceed with the calculation of the next step.

[0038] Compared with the prior art, the solution provided in this application has at least the following beneficial technical effects:

[0039] This invention, based on the coupled charging physical processes of space electron radiation and high-voltage environment, simulates and tracks the particle injection, collision scattering, and transport processes within the dielectric of complex and intricate structures of space high-voltage power electromechanical components. It comprehensively considers the combined effects of incident electrons, applied high-voltage electric fields, and electric fields influenced by charge transport and migration on the charge accumulation characteristics within the complex structure dielectric. In the tracking calculation of particle motion, the force on each particle includes not only the force exerted on it by all incident particles in space but also the forces related to conducted charges and the high-voltage external electric field. This better meets the actual needs of numerical simulation of electron motion and deposition within the charging process of complex structure dielectrics under space electron radiation and high-voltage environment. It achieves the calculation and tracking of the dynamic distribution of charge, potential, and electric field within the dielectric of complex and intricate structures, providing more accurate and comprehensive radiation effect information for the charged protection design of space high-voltage power electromechanical components. It solves the problem of quantitative simulation of the charging process of complex insulation structures of space high-voltage power electromechanical components under the long-term action of complex environments coupled with space electron radiation and high operating voltage. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the simulation process for the internal charge accumulation of a medium under space electron radiation and high pressure environment according to the present invention. Detailed Implementation

[0041] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0042] The present invention provides a simulation method for space electron radiation and charge accumulation in a dielectric under high pressure environment, the simulation process of which is as follows: Figure 1 As shown.

[0043] The following is combined Figure 1 The specific embodiments of the present invention will be described in detail below:

[0044] S1: Perform complex structure modeling and initialize the coupled working environment.

[0045] Specifically, complex structures are modeled, and the positions, dimensions, and material properties of metallic and dielectric materials are initialized. The space electron radiation energy spectrum is initialized based on the target orbital environment to determine the range of electron energy and electron flux incident on the dielectric material of the target structure. Considering the actual environment of high operating voltage, the applied external electric field is initialized, such as the initialization settings of the operating voltage of high-voltage DC electrodes.

[0046] S2: Mesh discretization, defining the spatial mesh and macroparticles used in the simulation.

[0047] In some embodiments, particle mesh discretization can be performed using a two-dimensional position space and a three-dimensional velocity space. Furthermore, when the number of incident electrons is large, multiple incident electrons of the same energy are combined into a particle cluster, called a "macroparticle," which greatly reduces the number of electrons required for computation. Then, the charge accumulation process simulation cycle described below is performed.

[0048] S3: In the i-th step, the charge of the macroparticles within the grid is distributed to the grid points to obtain the charge density distribution. i can be initially set to 1.

[0049] In some embodiments, the interpolation points of macroparticles are defined on grid points, and the charge of the macroparticles is distributed to four adjacent points according to the area enclosed by the adjacent grid points. Linear interpolation using a first-order weighting method yields the charge density at the grid points. The first-order weighting method smooths the density and field perturbations, reducing disturbances and noise, and is widely used in plasma particle simulations due to its effectiveness. Each newly introduced macroparticle needs to be interpolated and assigned to a grid point.

[0050] S4: In the i=1th step, based on the charge density distribution and the corresponding boundary conditions, the potential distribution is obtained by solving the Poisson equation on the grid, and then the electric field distribution is calculated. Step S4 is skipped when i>1.

[0051] Specifically, the charging process of complex structures can be simulated using an electrostatic process, ignoring the influence of the Earth's magnetic field, and an electrostatic model can be used to handle the cyclic propulsion process of particle motion. In this step of the invention, after calculating the charge density at each grid point, the potential value at each grid point is obtained by solving the Poisson equation on the grid according to the boundary conditions.

[0052]

[0053] In the formula Electric potential, in V; ε0 and ε r ρ represents the vacuum permittivity and relative permittivity; ρ is the net charge density calculated from the algebraic sum of all carrier densities, in C / m³. 3 .

[0054] By using the differential iteration method to solve the Poisson equation at the current moment, the potential value at each grid point can be obtained.

[0055] The electric field E is the electric potential. The correlation quantity can be solved by the following formula, thereby obtaining the electric field value at each grid point.

[0056]

[0057] In some embodiments, the boundary conditions may include an applied high-voltage electric field or potential. In complex structures, when a portion of the metallic material is energized, it can achieve a potential different from that of the adjacent dielectric material (e.g., a potential difference of 500V or more). An example is given below. Assume the component to which this method is applied includes part A, part B, and part C. The component may also include other parts. Part A and part B are two parts with different properties, and part B and part C are two parts with different properties. Part A is provided with an applied high-voltage electric field as a boundary condition; part A can be metallic. Part B is located between part A and part C; part B can be a vacuum region. Part C is the part of the macro-particle interpolation grid points in S3; part C can be a dielectric. Based on the relationship between part A and part B, the potential of the grid points at the boundary between part A and part B can be set. Based on the relationship between part B and part C, the potential of the grid points at the boundary between part B and part C can be set. Solving the Poisson equation for (part A), part B, and part C respectively yields the potential distribution, and then the electric field distribution of (part A), part B, and part C is calculated. Unlike existing simulation methods, by dividing the component into multiple parts according to its properties and solving the electric field distribution separately, the influence of the applied high voltage electric field on the macroparticle motion of the part of interest can be considered.

[0058] S5: When i = 1, the electric field at the grid point obtained in S4 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle; when i > 1, the electric field at the grid point obtained in S11 at step i-1 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle.

[0059] Specifically, the electric field at each grid point is first distributed to the electric field at the macroparticle's location. This process is consistent with the particle density interpolation process at the grid points in S3, also using a first-order weighting method for linear interpolation to reduce perturbations and noise. After analyzing the electric field distribution of the injected particles caused by space electron radiation, the applied high-voltage electric field and charge migration can be comprehensively considered to calculate the total electric field. Then, based on the position and electric field distribution of each macroparticle, the force on each macroparticle is calculated. The force F on the i-th macroparticle is... i:

[0060] F i =q i E i

[0061] In the formula q i E represents the charge of the i-th macroparticle. i Let be the field strength at the location of the i-th macroparticle.

[0062] The force experienced by each macroparticle in this invention includes not only the force exerted on the macroparticle by all injected electrons, but also the force related to the high-voltage external electric field and charge migration. This approach takes into account factors such as incident electrons, the applied high-voltage electric field, the electric field generated during particle transport, and the electric field influenced by charge migration, thus better meeting the practical needs of numerical simulation of charge accumulation processes in complex structures under space electron radiation and high-voltage coupling environments.

[0063] S6: In the i-th step, based on the forces acting on the macroparticle, calculate the velocity v of the macroparticle at the next moment using the classical or relativistic equations of motion for particles. i With position r i Then, the kinetic energy of the macroparticles can be calculated.

[0064]

[0065]

[0066] m i Let be the mass of the macroparticle.

[0067] S7: In the i-th step, based on the boundary condition assumptions, process the state of the charged particle cluster after moving to the boundary. The specific boundary conditions of this invention mainly involve the following cases:

[0068] First, consider the negative potential blocking effect. When complex structural materials are injected with incident electrons, surface charge accumulates, causing a change in surface potential. When the surface carries a negative potential, a negative potential blocking effect occurs, preventing incident electrons with energy lower than the surface potential from reaching the material surface, while simultaneously reducing the energy of incident electrons with energy higher than the surface potential when they reach the surface. For such boundaries, the potential that varies with surface charge density is a key area of ​​focus.

[0069] Second, there is the boundary barrier of the overall structure. The solid-vacuum interface represents a certain barrier, and not all electrons that reach the surface can be emitted from it. When an electron moves to the outer boundary of the structure, if its energy is higher than the threshold for emission from the material into the vacuum, it is considered to have emitted, and the electron is removed from the displacement and velocity matrices, thus initiating the next electron cycle. For emitted electrons that reach the surface but whose energy is insufficient to overcome the threshold barrier, the electrons are deposited on the boundary surface, affecting the surface potential.

[0070] Thirdly, the boundary treatment of the intersection of the dielectric and metallic materials involved in complex structures. When electrons move from the dielectric to the metallic material considered as the positive electrode, the electrons are absorbed and disappear by the metallic material. When electrons move from the dielectric to the metallic material considered as the negative electrode, the electrons are deposited in the metallic material and transported under the action of the electric field. Since the metallic material of the negative electrode itself has many charge carriers, this invention ignores these electrons and treats them as if the electrons were absorbed by the metallic material of the negative electrode.

[0071] Fourthly, the boundary treatment of complex structures involving the intersection of the medium and the vacuum region inside the structure. Electrons move from the medium to the vacuum boundary inside the structure. If the electron energy is higher than the threshold for emission from the medium to the vacuum, it overcomes the surface barrier and emits. If the electron energy is insufficient to overcome the threshold barrier for emission from the medium to the vacuum, the electron is deposited on the surface at the interface between the medium and the vacuum. Electrons then enter the vacuum region inside the structure, and their motion equations are processed. Under the influence of the electric field, the electrons will move in a straight line, requiring displacement calculations, until they enter another medium boundary.

[0072] S8: In the i-th step, calculate the collision scattering process of all injected high-energy electrons at the current time step. This includes both elastic and inelastic scattering processes. This invention uses the Monte Carlo Collision (MCC) model to simulate the scattering process of incident electrons in a solid. This process is simulated through a random walk controlled by a series of random numbers. A series of random numbers uniformly distributed between [0,1] are generated. Based on the macroparticle energy, the collision probability represented by the collision cross section or mean free path is compared to determine whether the macroparticle collides with the atoms of the structural material. If a collision occurs, the collision probability determines the type of collision, and the new state of the macroparticle after the collision is determined by combining the laws of conservation of energy and momentum. The changed velocity after the collision will affect the calculation of the new position based on the velocity at the next moment, that is, it affects the high-energy electron density distribution, and thus affects the electric field distribution calculated by solving the Poisson equation.

[0073] S9: In the i-th step, determine whether the macroparticle's kinetic energy is exhausted after the collision. For macroparticles that have not completely lost energy, this completes one collision scattering tracking loop for that macroparticle. The velocity after the current collision scattering is retained and the loop continues in the next time step. The collision scattering tracking loop for the current macroparticle ends, and the tracking and calculation of the collision scattering process and energy loss of the next high-energy macroparticle begins, until the collision motion tracking calculation of all macroparticles is completed. Electrons that have exhausted their kinetic energy and are deposited inside the medium after the scattering process may be captured by traps within the medium. Electrons that are not captured will be transported under the influence of the internal electric field.

[0074] S10: In the i-th step, uncaptured electrons enter the transport process, resulting in the electric field distribution inside the material. In other words, the transport process affects the charge distribution, potential distribution, and electric field distribution inside the material. The transport process can be represented by the current conduction equation, the current continuity equation, and Poisson's equation:

[0075] j e =n e ·μ e ·E

[0076]

[0077]

[0078] In the formula, j e It is the current density of electron carriers (e refers to free electrons), A / m 2 ;n e It is the charge density of electron carriers, C / m 3 μ e It is the free electron mobility, m 2 ·V -1 ·s -1 E is the electric field strength, in V / m. It is electric potential, V; S ej It is the source term considering the physical processes of electron trapping and detrapping, A / m 3 ρ is the net charge density calculated from the algebraic sum of all carrier densities, C / m. 3 As shown in the following formula.

[0079] ρ=n eu +n et

[0080] In the formula n eu It is the density of free electrons, n et It is the density of trapped electrons.

[0081] The current conduction equations were calculated using the upwind algorithm, which is one of the commonly used methods in numerical calculations of convection and diffusion.

[0082] Substituting the conduction equation into the current continuity equation yields the free carrier charge density distribution at the new moment. Solving the current continuity equation involves two steps. The first step considers only the conduction of electron carriers due to the electric field, neglecting changes in carrier density caused by trapping and detrapping. With the source term set to zero and neglected, the current continuity equation is as follows: This calculation represents the change in carrier charge density within the segment caused solely by the conduction term.

[0083]

[0084] The second step regarding the current continuity equation involves neglecting various carrier density changes caused by carrier conduction behavior and calculating the source term separately. This allows us to determine the changes in carrier density within the strata caused by behaviors other than conduction. The current continuity equation is then transformed into the following equation:

[0085]

[0086] Where S ej The density of free electrons and trapped electrons can be calculated from the following two equations, representing the rates of density change caused by the non-conduction terms. Deep trapping leads to a decrease in mobile electrons and an increase in trapped electrons, while escape from trapping leads to an increase in mobile electrons and a decrease in trapped electrons. The number of free electrons in the equations is calculated from the first step of the current continuity equation, and other values ​​are also given as initial parameters. Therefore, the density of trapped electrons can be obtained.

[0087]

[0088]

[0089] In the formula N 0.et It is the maximum density of electron traps, B e ν is the trapping coefficient of free electrons, and ν is the escape rate of trapped electrons; ΔU dtre This is a barrier for electron detrapping.

[0090] Based on the charge density distribution, the Poisson equation is solved, and the potential distribution under the influence of charge transport and migration is obtained, thus yielding the electric field distribution.

[0091] Existing software typically performs electron transport processing uniformly after the entire simulation is completed, thus failing to account for the impact of electron transport processing on the electric field during the existing simulation process. In this application, the macroparticle collision process at the i-th step size can be influenced by the macroparticle transport in all the previous i-1 steps, which is beneficial to improving the accuracy of the simulation solution.

[0092] S11: Determine if the conditions for terminating the simulation have been met. If they have, terminate the simulation; otherwise, set i = i + 1 and return to S3.

[0093] The simulation is terminated when the required simulation duration is reached or when equilibrium conditions are met. The equilibrium condition is determined by the spatial potential distribution or electric field distribution. When these quantities reach a relatively small fluctuation, the system is considered to be in equilibrium. At this point, the required data are collected, and the simulation is terminated.

[0094] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope defined in the claims of the present invention.

Claims

1. A method for simulating space electron radiation and charge accumulation in a dielectric under high pressure, characterized in that, include: S1: Perform complex structure modeling and initialize the coupled working environment; S2: Mesh discretization process, defining the spatial mesh and macroparticles used in the simulation; S3: In the i-th step, the charge of the macroparticles in the grid is distributed to the grid points to obtain the charge density distribution; S4: When i = 1, based on the charge density distribution and the corresponding boundary conditions, the electric potential distribution is obtained by solving the Poisson equation on the grid, and then the electric field distribution is calculated; if i > 1, skip this step. S5: When i = 1, the electric field at the grid point obtained in S4 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle; when i > 1, the electric field at the grid point obtained in S11 at step i-1 is distributed to the electric field at the macroparticle position, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle. S6: In the i-th step, based on the forces acting on the macroparticle, use the classical or relativistic equations of motion to calculate the velocity and position of the macroparticle at the next moment, and then calculate the kinetic energy of the macroparticle. S7: In the i-th step, based on the boundary condition assumptions, process the state of the charged particle cluster after it moves to the boundary. S8: In the i-th step, calculate the collision scattering process of all injected high-energy electrons at the current time step. S9: In the i-th step, complete the collision motion tracking calculation of all macroparticles; S10: In the i-th step, the uncaptured electrons enter the transport process to obtain the electric field distribution inside the material; S11: Determine if the conditions for terminating the simulation have been met. If they have, terminate the simulation; otherwise, set i = i + 1 and return to S3.

2. The method according to claim 1, characterized in that, The boundary conditions in S4 include an applied high-voltage electric field.

3. The method according to claim 2, characterized in that, The components used in the method include part A, part B, and part C. Parts A and B are two parts with different properties, and parts B and C are two parts with different properties. Part A is provided with an external high-voltage electric field as a boundary condition. Part A is metal, part B is vacuum, and part C is a medium. Part B is located between parts A and C, and part C is the part of the grid points for macro-particle interpolation in S3. Based on the relationship between parts A and B, the potential of the grid points at the boundary between parts A and B is set. Based on the relationship between parts B and C, the potential of the grid points at the boundary between parts B and C is set. In S4, the Poisson equation is solved for parts B and C respectively to obtain the potential distribution, and then the electric field distribution of parts B and C is calculated.

4. The method according to claim 1, characterized in that, S2 uses a two-dimensional position space and a three-dimensional velocity space for particle mesh discretization.

5. The method according to claim 1, characterized in that, S3 uses a first-order weighting method for linear interpolation to obtain the charge density at the grid points.

6. The method according to claim 1, characterized in that, In S4, the solution to the Poisson equation at the current time is obtained using the difference iteration method.

7. The method according to claim 1, characterized in that, S5 uses a first-order weighting method to perform inverse linear interpolation to obtain the electric field at the macroparticle position.

8. The method according to claim 1, characterized in that, The boundary conditions in S7 include four cases: negative potential blocking effect, boundary barrier of the overall structure, boundary treatment of the intersection of medium and metal material involved in complex structure, and boundary treatment of the intersection of medium and vacuum region inside the structure involved in complex structure.

9. The method according to claim 1, characterized in that, The transport process in S10 calculates the potential distribution inside the material by solving the current conduction equation, the current continuity equation, and the Poisson equation, and then obtains the electric field distribution, including: The current conduction equation is calculated using an upwind algorithm. The conduction equation is then substituted into the current continuity equation. The solution of the current continuity equation is performed in two steps. In the first step, only the conduction of electronic carriers due to the electric field is considered, ignoring the carrier density changes caused by trapping and detrapping behaviors. In the second step, the various carrier density changes caused by carrier conduction behaviors are ignored, and the source term is calculated separately to calculate the carrier density changes in the strata caused by behaviors other than conduction. Finally, the Poisson equation is solved based on the charge density distribution.

10. A method for simulating space electron radiation and charge accumulation in a dielectric under high pressure, characterized in that, include: Perform complex structure modeling and coupling working environment initialization; Mesh discretization is performed to define the spatial mesh and macroparticles used in the simulation. The charge density distribution is obtained by distributing the charge of macroparticles within the grid to the grid points; Based on the charge density distribution and corresponding boundary conditions, the potential distribution is obtained by solving the Poisson equation on the grid, and then the electric field distribution is calculated. The boundary conditions include an applied high-voltage electric field. The components used in this method include part A, part B, and part C. Parts A and B are two parts with different properties, and parts B and C are two parts with different properties. Part A is provided with the boundary condition of an applied high-voltage electric field. Part A is metal, part B is vacuum, and part C is a dielectric. Part B is located between parts A and C, and part C is the part of the grid points for macro-particle interpolation. According to the relationship between parts A and B, the potential of the grid points at the boundary between parts A and B is set. According to the relationship between parts B and C, the potential of the grid points at the boundary between parts B and C is set. The Poisson equation is solved for parts B and C respectively to obtain the potential distribution, and then the electric field distribution of parts B and C is calculated. The electric field at the obtained grid points is distributed to the electric field at the position of the macroparticle, and the force on each macroparticle is calculated based on the position and electric field distribution of each macroparticle. Based on the forces acting on the macroparticle, the velocity and position of the macroparticle at the next moment are calculated using the equations of motion for classical or relativistic particles, and then the kinetic energy of the macroparticle is calculated. Based on the boundary condition assumptions, the state of the charged particle cluster after it has moved to the boundary is handled; Calculate and track the collision scattering process of all injected high-energy electrons at the current time step; Complete the collision motion tracking calculations for all macroparticles; Determine if the conditions for terminating the simulation have been met. If they have, terminate the simulation; otherwise, proceed with the calculation of the next step.

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