An integrated coupled-function superpower six-port bridge
By using multilayer copper-clad laminate and high thermal conductivity materials, an ultra-high power six-port bridge with integrated coupling function was designed, solving the problems of bridge miniaturization and high power capacity, achieving high reliability and excellent heat dissipation performance, with a power capacity of 10000W pulse peak and 1000W continuous wave.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUOBO ELECTRONICS CO LTD
- Filing Date
- 2023-06-19
- Publication Date
- 2026-07-14
AI Technical Summary
Existing bridge circuits in the field of radio frequency and microwave suffer from problems such as large size, small power capacity and poor heat dissipation, making it difficult to achieve both miniaturization and high power capacity.
By employing multilayer copper clad laminate technology, using high thermal conductivity PTFE system copper clad laminate and metallized through-holes with copper paste, combined with spiral ribbon wire and reflow soldering process, an ultra-high power six-port bridge with integrated coupling function is designed, and the circuit structure is optimized to increase the effective dielectric constant and heat dissipation performance.
It achieves miniaturization and high power capacity of the bridge, improves the reliability and heat dissipation performance of the bridge in ultra-high power applications, and achieves a power capacity of 10,000W for pulse peak and 1,000W for continuous wave, filling the gap in the domestic bridge of the same specification.
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Figure CN117458113B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of bridge structure technology, specifically relating to an ultra-high power six-port bridge with integrated coupling function. Background Technology
[0002] As a key passive device, the bridge circuit is often used in phased array radar and other communication systems in the modern radio frequency microwave field. It plays a very important role in power division, combining, and phase shifting. How to achieve miniaturization, high power and high heat dissipation of the bridge circuit has always been the focus of research.
[0003] Currently, there are two main types of electrical bridges: traditional electrical bridges and surface-mount electrical bridges. Traditional electrical bridges are large in size, have a simple structure, and offer high power capacity; while surface-mount electrical bridges are small in size, highly integrated, and widely used in various RF microwave components and modules. However, they have lower power capacity and poor heat dissipation. Therefore, selecting appropriate dielectric materials and designing reasonable circuit structures to achieve high power capacity is an urgent problem to be solved. Summary of the Invention
[0004] Technical problem solved: This invention discloses an ultra-high power six-port bridge with integrated coupling function. Compared with the prior art, the effective dielectric constant of the circuit is increased and the size is reduced, realizing miniaturization. At the same time, the integration of coupling function in the circuit optimizes the overall circuit design, reduces RF breakpoints, and makes the bridge have high reliability in ultra-high power applications.
[0005] Technical solution:
[0006] A high-power six-port bridge with integrated coupling function, wherein the high-power six-port bridge is composed of a metal cover plate, a top pressure plate, an intermediate bridge layer, and a bridge base plate stacked from top to bottom;
[0007] The intermediate layer bridge is formed by laminating a copper-clad laminate with a high thermal conductivity PTFE system. From top to bottom, it consists of a first upper copper foil microstrip circuit, an upper dielectric board, a first lower copper foil microstrip circuit, an intermediate laminated PP sheet, a second upper copper foil microstrip circuit, a lower dielectric board, and a second lower copper foil microstrip circuit.
[0008] The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit are printed on both sides of the upper dielectric substrate using spiral strip lines for wide-side coupling.
[0009] The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, are electrically interconnected at the feed point by using metallized through-holes filled with copper paste; the intermediate layer bridge formed by laminating the first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, is electrically connected to the bridge base plate by reflow soldering process;
[0010] The six endpoints on the bridge base plate are respectively provided with six interfaces, which are connected to the input terminal, isolation terminal, coupling terminal, through terminal, first microstrip coupling output port and second microstrip coupling output port respectively; the amplitudes of the through terminal and the coupling terminal are equal and the phase difference is 90 degrees; the input terminal is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the through terminal; the isolation terminal is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the coupling terminal; the first microstrip coupling output terminal and the through terminal form a coupling branch, and the second microstrip coupling output terminal and the coupling terminal form another coupling branch.
[0011] Furthermore, four connection areas are correspondingly provided on the first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit, namely the first connection area, the second connection area, the third connection area, and the fourth connection area; a power supply point is provided in each of the four connection areas of each circuit layer.
[0012] The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit are printed on both sides of the upper dielectric substrate using spiral strip lines. The spiral strip lines of the first upper copper foil microstrip circuit extend to the first connection area and the fourth connection area, respectively.
[0013] The spiral strip of the first lower copper foil microstrip circuit extends to the second connection area and the third connection area at both ends, respectively.
[0014] The second lower copper foil microstrip circuit has four strip lines that extend the feed points in the four connection areas to the periphery and connect to the input terminal, isolation terminal, coupling terminal and through terminal on the bridge base plate, respectively.
[0015] The input terminal, isolation terminal, coupling terminal, and through terminal are located on both sides of the long side of the intermediate layer bridge. The first microstrip coupled output terminal and the second microstrip coupled output terminal are both located between the through terminal and the coupling terminal. The first microstrip coupled output terminal is adjacent to the through terminal, and the second microstrip coupled output terminal is adjacent to the coupling terminal.
[0016] Furthermore, the intermediate layer bridge has six metal edgings on both sides of its long side, four of which correspond one-to-one with the input terminal, isolation terminal, coupling terminal, and through terminal, and the remaining two metal edgings are located between the two interfaces on their respective sides.
[0017] Furthermore, both the upper and lower dielectric plates of the intermediate layer bridge are made of copper-clad laminates with high thermal conductivity PTFE system, and their relative permittivity ranges from 3.0 to 10.0. The dielectric thicknesses of the upper and lower dielectric plates are 0.508 mm and 1.524 mm, respectively.
[0018] Furthermore, the PP sheet used for the intermediate bridge is a two-layer prepreg with a relative permittivity ranging from 3.0 to 3.5 and a thickness of 0.2 mm.
[0019] Furthermore, the calculation process for the linewidth, coupling spacing, and length of each segment of the first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit of the intermediate layer bridge includes the following steps:
[0020] The odd-even mode characteristic impedance Z of the coupled line is obtained by using the odd-even mode model analysis method. o and Z e :
[0021] Z o =1 / V o *C o ;
[0022] Z e =1 / V e *C e ;
[0023] Where V o and V e These represent the transmission speeds for odd and even modes, respectively, C o and C e These are the unit length capacitances for both odd and even modes, respectively.
[0024] Based on transmission line theory, the coupling degree C is calculated as follows:
[0025] C = 20log((Z) e -Z o ) / (Z e +Z o ));
[0026] The relationship between odd-mode impedance and port impedance satisfies the following formula:
[0027]
[0028] The odd-even mode characteristic impedance of the wide-side coupled bridge is derived; combined with the odd-even mode characteristic impedance, the line width and coupling spacing of the wide-side coupled bridge are approximately calculated by looking up a table.
[0029] The length of the coupling line for each section is calculated using the following formula:
[0030]
[0031] Where g represents the acceleration due to gravity, with units of m / s². 2 λ represents wavelength, in μm; εr represents relative permittivity.
[0032] Furthermore, the metallized vias of the intermediate layer bridge are filled with copper paste, and the diameter of the metallized vias ranges from 0.3 mm to 0.5 mm.
[0033] Furthermore, the non-metallized vias of the intermediate layer bridge are not plugged, and the diameter of the non-metallized vias ranges from 2.2 mm to 3.2 mm.
[0034] Furthermore, the first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit of the intermediate layer bridge are assembled with screws or rivets.
[0035] Furthermore, the metal cover plate is made of materials including aluminum, copper, and stainless steel.
[0036] Beneficial effects:
[0037] First, the ultra-high power six-port bridge with integrated coupling function of the present invention adopts multi-layer copper-clad laminate technology. The multi-layer dielectric filling method increases the effective dielectric constant of the circuit, reduces the volume, and achieves miniaturization.
[0038] Secondly, the ultra-high power six-port bridge with integrated coupling function of the present invention uses high thermal conductivity PTFE system copper clad boards (relative permittivity 3.0 to 10.0) for all copper clad boards, which has a good heat dissipation coefficient and can improve the performance of system circuits and the reliability of long-term operation in ultra-high power engineering applications.
[0039] Third, the ultra-high power six-port bridge with integrated coupling function of the present invention uses multi-layer thick dielectric board material for the bridge. The circuit consists of 4 layers, of which 2 to 3 layers use metallized through holes filled with copper paste, and 1 to 2 layers are welded by reflow soldering process to form electrical connection. The multi-layer circuit board is assembled with screws or rivets, avoiding blind hole process and ultra-long metal through holes from top to bottom, reducing the processing difficulty and increasing good conductivity and heat dissipation performance.
[0040] Fourth, the ultra-high power six-port bridge with integrated coupling function of the present invention integrates coupling function in the circuit, which facilitates and optimizes the design and implementation of the overall circuit, reduces RF breakpoints, and makes it highly reliable in ultra-high power application fields.
[0041] Fifth, the ultra-high power six-port bridge with integrated coupling function of the present invention has a bridge power capacity of 10,000W for pulse peak power and 1,000W for continuous wave power. At present, this power capacity has filled the gap in the domestic bridge of the same specification. Attached Figure Description
[0042] Figure 1 This is a three-dimensional structural diagram of the ultra-high power six-port bridge with integrated coupling function of the present invention;
[0043] Figure 2 This is a side view of the three-dimensional structure of the ultra-high power six-port bridge with integrated coupling function of the present invention;
[0044] Figure 3 This is a schematic diagram of the first upper copper foil microstrip circuit structure of the intermediate layer bridge.
[0045] Figure 4 This is a schematic diagram of the first lower copper foil microstrip circuit structure of the intermediate layer bridge.
[0046] Figure 5 This is a schematic diagram of the second upper copper foil microstrip circuit structure of the intermediate layer bridge.
[0047] Figure 6 This is a schematic diagram of the second lower copper foil microstrip circuit structure of the intermediate layer bridge.
[0048] Figures 7 to 11 This is a schematic diagram of the S-parameter simulation results of the bridge circuit of the present invention;
[0049] Figure 12 This is a schematic diagram of the simulation results for the heat dissipation of the electric bridge.
[0050] Figure 13 This is a schematic diagram of temperature changes during open-circuit limit simulation for total reflection mismatch.
[0051] Figure 1 The labels are as follows: 1-Bridge base plate; 2-Lower dielectric plate; 3-Intermediate laminated PP sheet; 4-Upper dielectric plate; 5-Top layer pressure plate; 6-Metal cover plate; 7-Input terminal; 8-Isolation terminal; 9-Through terminal; 10-Coupled terminal; 11-First microstrip coupled output terminal; 12-Second microstrip coupled output terminal; 13-18-Metallic edging; 19-Metallized through-hole with copper paste filling.
[0052] Figure 3 In the middle, it is noted that 20-23 are the metallized via feed points;
[0053] Figure 4 In the middle, it is noted that 24-27 are the metallized via feed points;
[0054] Figure 5 In the middle, it is noted that 28~31 are the metallized via feed points;
[0055] Figure 6 The markings in the text are: 32~35 - Metallized through-hole feed points. Detailed Implementation
[0056] The following embodiments are provided to enable those skilled in the art to more fully understand the present invention, but do not limit the invention in any way.
[0057] join Figure 1 and Figure 2 This application discloses an ultra-high power six-port bridge with integrated coupling function. The ultra-high power six-port bridge is composed of a metal cover plate 6, a top pressure plate 5, an intermediate bridge layer, and a bridge base plate 1 stacked from top to bottom.
[0058] The intermediate layer bridge is formed by laminating a copper-clad laminate with a high thermal conductivity PTFE system. From top to bottom, it consists of a first upper copper foil microstrip circuit, an upper dielectric board 4, a first lower copper foil microstrip circuit, an intermediate laminated PP sheet 3, a second upper copper foil microstrip circuit, a lower dielectric board 2, and a second lower copper foil microstrip circuit.
[0059] The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit are printed on both sides of the upper dielectric substrate 4 using spiral strip lines for wide-side coupling; this circuit board structure is simple, has high space utilization, and can reduce space size;
[0060] The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, are electrically interconnected at the feed point by metallized through-holes filled with copper paste; the intermediate layer bridge formed by laminating the first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, is electrically connected to the bridge base plate 1 by reflow soldering process;
[0061] The six endpoints on the bridge base plate 1 are respectively provided with six interfaces, which are connected to the input terminal 7, the isolation terminal 8, the coupling terminal 10, the through terminal 9, the first microstrip coupling output terminal 11, and the second microstrip coupling output terminal 12. The amplitudes of the through terminal 9 and the coupling terminal 10 are equal, and the phase difference is 90 degrees. The input terminal 7 is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the through terminal 9. The isolation terminal 8 is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the coupling terminal 10. The first microstrip coupling output terminal 11 and the through terminal 9 form a coupling branch, and the second microstrip coupling output terminal 12 and the coupling terminal 10 form another coupling branch.
[0062] The ultra-high power bridge described in this embodiment is composed of a metal cover plate 6, a top pressure plate 5, an intermediate bridge layer, and a bridge base plate 1 stacked together. The intermediate bridge layer is welded to the bridge base plate 1 using a reflow soldering process. It adopts a spiral ribbon structure internally. The outer walls of the long sides of the intermediate bridge layer are metal-edged to facilitate reflow soldering and provide electrical conductivity and heat dissipation. The metal cover plate 6 and the top pressure plate 5 are both fastened with screws to prevent electromagnetic leakage. The bridge base plate 1 is fixed by welding to facilitate good electrical conductivity and heat dissipation under high power. The overall dimensions of the bridge are 37mm in length, 28mm in width, and 8mm in thickness.
[0063] The bridge base plate 1 is made of copper-clad laminate with high thermal conductivity PTFE system (relative permittivity 3.0~10.0), and the upper layer is a copper foil microstrip circuit with a thickness of 1.524mm. The overall length of the bridge base plate 1 is 37mm and the width is 28mm. A coupling microstrip output circuit is added to the bridge base plate 1. The six terminals of the bridge base plate 1 are respectively provided with six interfaces, which are connected to the input terminal 7, the isolation terminal 8, the coupling terminal 10, the through terminal 9, the first microstrip coupling output terminal 11 and the second microstrip coupling output terminal 12. Specifically, input terminal 7 is connected to the metallized via feed point 35, which in turn connects to feed points 31, 27, 23, 20, 24, and 28, finally forming an electrical connection via feed point 32 corresponding to through terminal 9. Similarly, the metallized via feed point 34 corresponding to isolation terminal 8 is connected to feed points 30, 26, 25, and 29, finally forming another electrical connection via feed point 33 corresponding to coupling terminal 10. The first microstrip coupled output terminal 11 and through terminal 9 form a coupling branch, and the second microstrip coupled output terminal 12 and coupling terminal 10 form another coupling branch.
[0064] like Figure 3 , Figure 4 As shown, the circuit structure uses spiral strip lines printed on both sides of the intermediate dielectric board for wide-side coupling. Wide-side coupled bridges have advantages such as high power capacity, low insertion loss, and high isolation, so they are often used to design high-power wide-side coupled bridges. The amplitudes of the through terminal 9 and the coupling terminal 10 are equal, and the phase difference is 90 degrees.
[0065] The coupling line calculation adopts the odd-even mode model analysis method. The odd-even mode characteristic impedance satisfies formulas (1) and (2):
[0066] Z o =1 / V o *C o (1);
[0067] Z e =1 / V e *C e (2);
[0068] Where V o and Ve These represent the transmission speeds for odd and even modes, respectively, C o and C e These are the unit length capacitances for both odd and even modes.
[0069] According to transmission line theory, the coupling degree C satisfies formula (3):
[0070] C = 20log((Z) e -Z o ) / (Z e +Z o )) (3);
[0071] The relationship between odd-mode impedance and port impedance must satisfy formula (4):
[0072]
[0073] Based on formulas (3) and (4), the odd and even mode characteristic impedances of the wide-side coupled bridge can be derived as Zodd and Zeven, respectively. o =20.7, Z e =120.8. Through the above derivations and related table lookups, the line width and coupling spacing can be approximately calculated. The length of each section can be obtained through the formula (5) for calculating the length of the coupling line, that is:
[0074]
[0075] Taking into account factors such as miniaturization, amplitude balance, and phase balance, while also considering the relatively low operating frequency and long internal circuitry of the dielectric substrate, the design reduces the linewidth and size of the substrate by altering its dielectric constant and thickness. Simultaneously, shifting the center frequency towards higher frequencies reduces the λ / 4 electrical length, thus lowering bridge losses. A higher relative dielectric constant of the substrate results in a shorter physical length, facilitating miniaturization. However, a higher dielectric constant also leads to narrower linewidths for the coupled striplines, increasing losses. Considering the bridge's high power handling capability, the linewidth was set to 1.55 mm, higher than theoretically calculated, further improving power capacity. The final internal structure of the bridge is shown below. Figure 3 , Figure 4 As shown.
[0076] In this invention, the bridge uses a multilayer dielectric substrate lamination technology, which stacks copper foil, prepreg, and patterned dielectric substrate in a certain order, and then bonds them together under high temperature and high pressure. Considering the problem of high power heat dissipation, a copper-clad laminate with high thermal conductivity PTFE system (relative permittivity 3.0 to 10.0) is selected. At the same time, two layers of prepreg (relative permittivity 3.0 to 3.5) are used between the dielectric substrates to prevent distortion and deformation caused by the difference in expansion and contraction coefficients of each layer after the dielectric substrate is heated, and at the same time, it plays the role of insulation and adhesion.
[0077] Figure 7-11 The S-parameter simulation results of the bridge of the present invention show that the ports are well matched, the VSWR is below 1.2, the isolation is below -21.25dB, the coupling is around 3dB, the phase difference between port 3 and port 4 is around 90 degrees, and the insertion loss is below 0.26dB.
[0078] Figure 12 The simulation results of the bridge heat dissipation are as follows. Figure 12 (a) is a cross-section of the front view, and (b) is the front view. Based on the bridge insertion loss of approximately 0.3 dB, it is deduced that about 1% (approximately 10 W) of the power in a 1000 W continuous wave is converted into heat. Furthermore, thermodynamic simulations were performed based on the thermal conductivity of the high thermal conductivity PTFE system copper-clad laminate. Therefore, when the base temperature is set to 70 °C, the highest temperature is 135 °C, with a temperature rise of 65 °C. This temperature is within the tolerance range of the dielectric substrate and meets the requirements of practical engineering.
[0079] Due to practical application requirements, the bridge circuit must not burn out under total internal reflection mismatch conditions. Therefore, an open-circuit limit simulation was performed for the total internal reflection mismatch condition, and the temperature change is as follows: Figure 13 As shown, Figure 13 (a) is a front view section, and (b) is the front view. It can be seen that under the condition of total internal reflection mismatch, with the bottom temperature set at 70℃ and the maximum temperature at 168℃, the temperature rise is 98℃. The maximum temperature is still lower than the bonding temperature of the multilayer dielectric substrate (180℃), further improving the feasibility of the proposed solution.
[0080] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.
Claims
1. A high-power six-port bridge with integrated coupling function, characterized in that, The ultra-high power six-port bridge is composed of a metal cover plate, a top pressure plate, a middle bridge layer, and a bridge base plate stacked from top to bottom. The intermediate layer bridge is formed by laminating a copper-clad laminate with a high thermal conductivity PTFE system. From top to bottom, it consists of a first upper copper foil microstrip circuit, an upper dielectric board, a first lower copper foil microstrip circuit, an intermediate laminated PP sheet, a second upper copper foil microstrip circuit, a lower dielectric board, and a second lower copper foil microstrip circuit. The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit are printed on both sides of the upper dielectric substrate using spiral strip lines for wide-side coupling. The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, are electrically interconnected at the feed point by using metallized through-holes filled with copper paste; the intermediate layer bridge formed by laminating the first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit, as well as the second upper copper foil microstrip circuit and the second lower copper foil microstrip circuit, is electrically connected to the bridge base plate by reflow soldering process; The six endpoints on the bridge base plate are respectively provided with six interfaces, which are connected to the input terminal, isolation terminal, coupling terminal, through terminal, first microstrip coupling output port and second microstrip coupling output port: the amplitude of the through terminal and the coupling terminal are equal and the phase difference is 90 degrees; the input terminal is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the through terminal; the isolation terminal is connected to the feed points on the four microstrip circuits in sequence and then forms an electrical connection with the coupling terminal; the first microstrip coupling output terminal and the through terminal form a coupling branch, and the second microstrip coupling output terminal and the coupling terminal form another coupling branch.
2. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, Each of the first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit has four connection areas, namely the first connection area, the second connection area, the third connection area, and the fourth connection area; each of the four connection areas of each circuit layer has a power supply point. The first upper copper foil microstrip circuit and the first lower copper foil microstrip circuit are printed on both sides of the upper dielectric substrate using spiral strip lines. The spiral strip lines of the first upper copper foil microstrip circuit extend to the first connection area and the fourth connection area, respectively. The spiral strip of the first lower copper foil microstrip circuit extends to the second connection area and the third connection area at both ends, respectively. The second lower copper foil microstrip circuit has four strip lines that extend the feed points in the four connection areas to the periphery and connect to the input terminal, isolation terminal, coupling terminal and through terminal on the bridge base plate, respectively. The input terminal, isolation terminal, coupling terminal, and through terminal are located on both sides of the long side of the intermediate layer bridge. The first microstrip coupled output terminal and the second microstrip coupled output terminal are both located between the through terminal and the coupling terminal. The first microstrip coupled output terminal is adjacent to the through terminal, and the second microstrip coupled output terminal is adjacent to the coupling terminal.
3. The ultra-high power six-port bridge with integrated coupling function according to claim 2, characterized in that, The intermediate layer bridge has six metal edgings on both sides of its long side. Four of these metal edgings correspond to the input terminal, isolation terminal, coupling terminal, and through terminal, respectively, while the remaining two metal edgings are located between the two interfaces on their respective sides.
4. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The upper and lower dielectric boards of the intermediate layer bridge are both made of copper-clad laminate with high thermal conductivity PTFE system, and the relative permittivity ranges from 3.0 to 10.
0. The dielectric thicknesses of the upper and lower dielectric boards are 0.508 mm and 1.524 mm, respectively.
5. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The intermediate layer bridge uses a two-layer prepreg with a relative permittivity ranging from 3.0 to 3.5 and a thickness of 0.2 mm.
6. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The calculation process for the linewidth, coupling spacing, and length of each section of the first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit of the intermediate layer bridge includes the following steps: The odd-even mode characteristic impedance Z of the coupled line is obtained by using the odd-even mode model analysis method. o and Z e : From o =1 / V o *C o ; From e =1 / V e *C e ; Where V o and V e These represent the transmission speeds for odd and even modes, respectively, C o and C e These are the unit length capacitances for both odd and even modes, respectively. Based on transmission line theory, the coupling degree C is calculated as follows: C=20log((Z e -WITH o ) / (WITH e +Z o )); The relationship between odd-mode impedance and port impedance satisfies the following formula: The odd-even mode characteristic impedance of the wide-side coupled bridge is derived; combined with the odd-even mode characteristic impedance, the line width and coupling spacing of the wide-side coupled bridge are approximately calculated by looking up a table. The length of the coupling line for each section is calculated using the following formula: Where g represents the acceleration due to gravity, with units of m / s². 2 λ represents wavelength, with units of μm; ε r This represents the relative permittivity.
7. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The metallized vias of the intermediate layer bridge are filled with copper paste, and the diameter of the metallized vias ranges from 0.3 mm to 0.5 mm.
8. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The non-metallized vias of the intermediate layer bridge are not plugged, and the diameter of the non-metallized vias ranges from 2.2 mm to 3.2 mm.
9. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The first upper copper foil microstrip circuit, the first lower copper foil microstrip circuit, the second upper copper foil microstrip circuit, and the second lower copper foil microstrip circuit of the intermediate layer bridge are assembled with screws or rivets.
10. The ultra-high power six-port bridge with integrated coupling function according to claim 1, characterized in that, The metal cover is made of materials including aluminum, copper, and stainless steel.