Method for adjusting thickness of magnetron sputtering film

Abstract

A method for calibrating the thickness of a film formed by magnetron sputtering includes the steps of: S1, preparing a substrate sheet; S2, selecting process parameters for magnetron sputtering; S3, performing magnetron sputtering under the selected process parameters; S4, measuring the thickness of the film formed by magnetron sputtering; S5, if the measured thickness of the film is less than a minimum thickness, performing step S6, and if the measured thickness of the film is not less than the minimum thickness, performing step S7; S6, adjusting the sputtering power and / or the sputtering time, and returning to step S2; S7, obtaining a calibrated sputtering power P1, a calibrated sputtering time t1, a calibrated sputtering temperature, a calibrated working gas flow rate, and a calibrated film thickness T1; S8, based on a thickness T2 of a film to be formed, selecting a sputtering power P2 for the film to be formed and a sputtering time t2 for the film to be formed according to T2 / T1=(P2*t2) / (P1*t1), and selecting other process parameters to be unchanged; and S9, performing magnetron sputtering based on the selected process parameters for the film to be formed.

Description

Technical Field

[0001] This disclosure relates to the field of thin film technology, and more specifically to a method for adjusting the thickness of magnetron sputtering coatings. Background Technology

[0002] In thin film manufacturing technology, thin films prepared by magnetron sputtering have advantages such as dense structure, high compositional uniformity, and high deposition rate. Therefore, magnetron sputtering has become the main method for preparing metal thin films.

[0003] Metal thin films are commonly used as interconnect layers in semiconductor devices, and their thickness significantly impacts the final performance of the device. Each device may contain multiple metal layers, and the required thickness of each metal film varies. The thickness of metal thin films is typically measured using slicing or profilometry. Slicing requires damaging the silicon wafer before observing the cross-sectional thickness with a scanning electron microscope, which is costly and detrimental to the sample. Profilometry requires pre-creating steps on the film, and manually measuring the step height to obtain the film thickness; similarly, this method is detrimental to the sample and complex.

[0004] Typically, different thicknesses can be varied by changing the deposition time. However, when the film thickness is thin or thick, the deposition time is either too short or too long. A short deposition time means the process ends before reaching a stable state, leading to uncontrolled processing. A long deposition time reduces deposition efficiency and production capacity. In such cases, the power needs to be adjusted to achieve a suitable deposition time. When the sputtering power changes, the deposition rate changes, requiring recalibration of the film thickness. Therefore, a method for adjusting the deposition thickness is needed to determine the film thickness so that recalibration is not required each time. Summary of the Invention

[0005] In view of the problems existing in the background art, the purpose of this disclosure is to provide a method for adjusting the thickness of magnetron sputtering coating, which can determine the thickness of the film so that the thickness does not need to be recalibrated each time.

[0006] Therefore, a method for adjusting the thickness of a magnetron sputtering film includes the following steps: S1, preparing a substrate; S2, selecting process parameters for magnetron sputtering, including at least sputtering power, sputtering time, sputtering temperature, and working gas flow rate, wherein the sputtering power is not less than the minimum sputtering power, and the sputtering time is not less than the minimum sputtering time; S3, performing magnetron sputtering under the selected process parameters; S4, measuring the thickness of the magnetron-sputtered film; S5, determining whether the measured film thickness is greater than the minimum thickness; if the measured film thickness is less than the minimum thickness, proceeding to step S6; if the measured film thickness is not less than the minimum thickness, proceeding to step S7; S6, adjusting the sputtering power and / or sputtering time, and returning to step S2, executing the cycle from step S2 to step S5. S7, obtain the calibrated sputtering power P1, calibrated sputtering time t1, calibrated sputtering temperature, calibrated working gas flow rate, and calibrated film thickness T1 after film thickness calibration; S8, based on the obtained calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1, and based on the thickness T2 of the film to be coated, select the sputtering power P2 and the sputtering time t2 of the film to be coated according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged. Among them, the thickness T2 of the film to be coated is not less than the minimum thickness, the sputtering power P2 of the film to be coated is not less than the minimum sputtering power, and the sputtering time t2 of the film to be coated is not less than the shortest sputtering time; S9, perform magnetron sputtering based on the selected process parameters of the film to be coated.

[0007] The beneficial effects of this disclosure are as follows: Based on the magnetron sputtering coating thickness adjustment method of this disclosure, the magnetron sputtering coating thickness can be calibrated through steps S1 to S7. After calibration, the corresponding process parameters can be selected based on the coating thickness T2 in step S8 to perform the coating in step S9. Therefore, only the magnetron sputtering coating thickness calibration in steps S1 to S7 and the selection of process parameters in step 8, including at least sputtering power, sputtering time, sputtering temperature, and working gas flow rate, need to be performed. After step S9, there is no need to recalibrate the thickness, thereby reducing the time and cost of calibration in large-scale magnetron sputtering coating production. Attached Figure Description

[0008] Figure 1 This is a schematic plan view of an example magnetron sputtering apparatus.

[0009] Figure 2 This is a flowchart of the method for adjusting the thickness of magnetron sputtering coating according to this disclosure.

[0010] Figure 3 This is a slice photograph of step S4 of the magnetron sputtering coating thickness adjustment method in Example 1.

[0011] Figure 4This is a slice photograph of step S10 of the magnetron sputtering coating thickness adjustment method in Example 1.

[0012] Figure 5 This is a slice photograph of step S4 of the magnetron sputtering coating thickness adjustment method in Example 2.

[0013] Figure 6 This is a slice photograph of step S10 of the magnetron sputtering coating thickness adjustment method in Example 2.

[0014] Figure 7 This is a slice photograph of step S4 of the magnetron sputtering coating thickness adjustment method in Example 3.

[0015] Figure 8 This is a slice photograph of step S10 of the magnetron sputtering coating thickness adjustment method in Example 3.

[0016] The reference numerals in the attached figures are explained as follows:

[0017] 100 Magnetron Sputtering Equipment 16 Housing

[0018] D screws (17 screws, up and down direction)

[0019] 1 cavity 2 base

[0020] 11 bottom wall 3 magnets

[0021] 12-week wall with 4 air supply pipes

[0022] 13 top wall 5 exhaust pipes

[0023] 14 internal space 200 substrate wafer

[0024] 15 top cover 300 target material Detailed Implementation

[0025] The accompanying drawings illustrate embodiments of this disclosure, and it will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.

[0026] [Magnetron sputtering equipment]

[0027] Figure 1 This is a plan view of an example magnetron sputtering apparatus.

[0028] Reference Figure 1 The magnetron sputtering equipment 100 includes a cavity 1, a base 2, a magnet 3, an air supply pipe 4, and an exhaust pipe 5.

[0029] The cavity 1 has a bottom wall 11, a peripheral wall 12, and a top wall 13, and an internal space 14 enclosed by the bottom wall 11, the peripheral wall 12, and the top wall 13. The top wall 13 is used to fix a target 300 connected to a cathode (not shown) below. The cavity 1 includes a removable (e.g., by screws) top cover 15 and a housing 16. A base 2 is positioned above the bottom wall 11 and is used to support a substrate 200 and for connection to an anode (not shown). A magnet 3 is located between the top wall 13 and the target 300 and is positioned opposite the base 2 in the vertical direction D. The magnet 3 is used to apply a magnetic field to the target 300. The gas supply pipe 4 is used for controlled connection to an external working gas source (argon when the coating on the substrate 200 is a metal thin film, and argon and the components of the metal compound other than the metal when the coating on the substrate 200 is a metal compound; for example, if the coating on the substrate 200 is a TiN thin film, the working gas is argon and nitrogen) and the internal space 14 of the cavity 1. The exhaust pipe 5 is located on the bottom wall 11 and is used for controlled connection between the internal space 14 of the cavity 1 and an external vacuum device (not shown). The exhaust pipe 5 and the gas supply pipe 4 are located on opposite sides of the base 2.

[0030] The substrate 200 can be any suitable material that requires coating, such as metal.

[0031] The target 300 can be fixed using any suitable method. Figure 1 In this configuration, the edge of the target 300 can be fixedly connected to the top wall 13 by screws 17. The magnet 3 can be fixed in any suitable manner, for example, the magnet 3 can be fixed to the top wall 13 by a corresponding mounting bracket (not shown).

[0032] Note that cathode and anode refer to the cathode and anode of the power supply. In one example, the power supply is a DC power supply. "Controlled" connection can be achieved by setting appropriate control valves.

[0033] [Methods for Adjusting the Thickness of Magnetron Sputtering Coatings]

[0034] Figure 2 This is a flowchart of the method for adjusting the thickness of magnetron sputtering coating according to this disclosure.

[0035] Reference Figure 2 The method for adjusting the thickness of magnetron sputtering coating includes the following steps:

[0036] S1, Prepare substrate 200;

[0037] S2, Select process parameters for magnetron sputtering that include at least sputtering power, sputtering time, sputtering temperature, and working gas flow rate, with sputtering power not less than the minimum sputtering power and sputtering time not less than the minimum sputtering time;

[0038] S3, magnetron sputtering is performed under selected process parameters (e.g., using...). Figure 1 Magnetron sputtering equipment 100);

[0039] S4, Measure the thickness of the thin film sputtered by magnetron sputtering;

[0040] S5. Determine whether the thickness of the measured film is not less than the minimum thickness. If the thickness of the measured film is less than the minimum thickness, proceed to step S6. If the thickness of the measured film is not less than the minimum thickness, proceed to step S7.

[0041] S6, adjust the sputtering power and / or sputtering time, and return to step S2 to perform the cycle from step S2 to step S5;

[0042] S7, obtain the calibrated sputtering power P1, calibrated sputtering time t1, calibrated sputtering temperature, calibrated working gas flow rate, and calibrated film thickness T1 after film thickness calibration;

[0043] S8. Based on the calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1 after film thickness calibration, and based on the thickness T2 of the film to be coated, select the sputtering power P2 and the sputtering time t2 of the film to be coated according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged. Among them, the thickness T2 of the film to be coated is not less than the minimum thickness, the sputtering power P2 of the film to be coated is not less than the minimum sputtering power, and the sputtering time t2 of the film to be coated is not less than the minimum sputtering time.

[0044] S9, magnetron sputtering is performed based on the selected process parameters of the film to be coated (similarly, for example, using...). Figure 1 The magnetron sputtering equipment 100).

[0045] Based on the magnetron sputtering coating thickness adjustment method disclosed herein, the magnetron sputtering coating thickness can be calibrated through steps S1 to S7. After calibration, the corresponding process parameters can be selected based on the coating thickness T2 in step S8 to proceed to step S9 for coating. Therefore, only the magnetron sputtering coating thickness calibration in steps S1 to S7 and the selection of process parameters in step 8 (including at least sputtering power, sputtering time, sputtering temperature, and working gas flow rate) need to be performed. After step S9, there is no need to recalibrate the thickness, thus reducing the time and cost of thickness calibration in large-scale magnetron sputtering coating production.

[0046] In step S5, the minimum thickness is the minimum value of the film thickness when the film thickness and the film growth rate are established by changing the sputtering time while keeping other process parameters of magnetron sputtering unchanged. This is the minimum value of the film thickness when the film growth rate reaches a stable state and thereafter exhibits a linear relationship between the film thickness and the sputtering time.

[0047] In one example, the substrate is either an empty silicon wafer or a silicon wafer with a dielectric layer. For example, the dielectric layer is silicon oxide or silicon nitride.

[0048] In one example, in steps S2 and S8, the minimum sputtering power is 1 kW and the minimum sputtering time is 20 s.

[0049] In one example, the sputtering power is the output power of the DC power supply (i.e., the DC power supply of the magnetron sputtering device 100).

[0050] In one example, in step S2, the selected sputtering power is in the range of 1KW-5KW (i.e., 1KW is the minimum sputtering power), the selected sputtering time is in the range of 20-150s (i.e., 20s is the shortest sputtering time), the selected working gas flow rate is in the range of 30-100mL / min, and the selected sputtering temperature is in the range of 30-300℃. Further, in step S2, for the titanium thin film, the selected sputtering power is 1KW, the selected sputtering time is 100s, the working gas is argon, the selected argon flow rate is 50mL / min, and the selected sputtering temperature is 30℃; for the aluminum thin film, the selected sputtering power is 1KW, the selected sputtering time is 60s, the working gas is argon, the selected argon flow rate is 30mL / min, and the selected sputtering temperature is 150℃; for the titanium nitride thin film, the selected sputtering power is 3KW, the selected sputtering time is 150s, the working gases are argon and nitrogen, the selected argon flow rate is 30mL / min, the selected nitrogen flow rate is 80mL / min, and the selected sputtering temperature is 30℃.

[0051] In one example, in step S4, the thickness of the film is measured using a profilometer or a slice method.

[0052] In one example, in step S5, the minimum thickness is 20 nm.

[0053] In one example, in step S6, the sputtering power or sputtering time is adjusted.

[0054] In one example, in steps S3 and S9, the target material 300 for magnetron sputtering is made of titanium (Ti) or aluminum (Al). However, it is not limited to this; the target material 300 for magnetron sputtering can be any suitable metal. Furthermore, in steps S3 and S9, during the magnetron sputtering process, the gas supply pipe 4 continuously supplies working gas to the internal space 14 of the cavity 1, while the exhaust pipe 5 remains connected to an external vacuum pump (not shown) to evacuate the cavity, thereby maintaining the internal space 14 of the cavity 1 at a specified pressure. For example, the magnetron sputtering pressure is 2-10 mT.

[0055] In one example, to verify the thickness T2 of the film to be deposited based on step S8 and the thickness of the film obtained after step S9, the method for adjusting the thickness of the magnetron sputtering film further includes step S10: measuring the thickness of the magnetron sputtered film and comparing it with the thickness T2 of the film to be deposited in step S8. Note that step S10 is only for verification and not for mass production. After verification in step S10, mass production can proceed directly by executing step S9 based on the process parameters (i.e., at least including sputtering power, sputtering time, sputtering temperature, and working gas flow rate) selected in step S8 for the thickness T2 of the film to be deposited, since step S10 has already verified the thickness before mass production.

[0056] Similarly, in one example, in step S10, the thickness of the film is measured using a profilometer or slicing method.

[0057] [test]

[0058] A. Determine the minimum thickness

[0059] A magnetron sputtering device 100 is used. The substrate 200 is a silicon wafer with a 300nm thick SiO2 dielectric layer. Taking the target material 300 as titanium (Ti) with a purity of 5N as an example, the sputtering power (i.e. the output power of the DC power supply of the magnetron sputtering device 100) is 1KW. The flow rate of argon gas, which is supplied to the internal space 14 of the cavity 1 as the working gas, through the gas supply pipe 4 is 50mL / min. The sputtering temperature is 30℃. The exhaust pipe 5 is kept in contact with the external vacuum pumping device to evacuate the vacuum so that the internal space 14 of the cavity 1 is maintained at 5mT.

[0060] Table 1 shows the relationship between sputtering time, film thickness, and growth rate, where the growth rate is the film thickness divided by the time, and the film thickness is measured by the slicing method.

[0061] Table 1. Relationship between sputtering time, film thickness, and growth rate

[0062] 5 7.7 1.5 7 10.7 1.5 15 17 1.1 20 20.5 1.0 30 30.7 1.0 40 41 1.0

[0063] As shown in Table 1, when the film thickness is above 20 nm, the film growth rate tends to stabilize, and the film thickness and sputtering time show a linear relationship. Therefore, the minimum thickness is determined to be 20 nm.

[0064] Note that, regarding the adjustment of the magnetron sputtering coating thickness in Part B, although only data on titanium currently proves that the coating rate only stabilizes when the film thickness is greater than 20nm, the minimum film thickness of 20nm is applicable because the target growth mode is the same for different materials during magnetron sputtering.

[0065] B. Adjustment of magnetron sputtering coating thickness

[0066] Before mass production, thickness adjustment (including verification) is carried out using magnetron sputtering coating thickness adjustment methods.

[0067] Example 1 (for titanium (Ti) thin films)

[0068] The method for adjusting the thickness of magnetron sputtering coatings follows these steps:

[0069] S1. Prepare substrate 200, which is a silicon wafer with a 300nm thick SiO2 dielectric layer.

[0070] S2. Select the process parameters for magnetron sputtering: sputtering power is 1KW, sputtering time is 100s, sputtering temperature is 30℃, process gas is argon and argon flow rate is 50mL / min, sputtering power is not less than the minimum sputtering power (minimum sputtering power is 1KW), and sputtering time is not less than the shortest sputtering time (shortest sputtering time is 20s).

[0071] S3, under the process parameters selected in step S2, magnetron sputtering is performed using magnetron sputtering equipment 100, the target material 300 is titanium with a purity of 5N, and the internal space 14 in the cavity 1 is maintained at 5mT.

[0072] S4, the thickness of the thin film sputtered in step S3 was measured to be 103 nm using a slicing method. Figure 3 As shown;

[0073] S5, determine whether the measured film thickness is less than the minimum thickness (i.e., the minimum thickness determined in part A above is 20 nm). If the measured film thickness (i.e., 103 nm obtained in step S4) is greater than the minimum thickness, then no further action is required. Figure 2 Step S6 is followed by step S7;

[0074] S7, the calibrated sputtering power P1 after film thickness calibration is 1KW, the calibrated sputtering time t1 is 100s, the calibrated sputtering temperature is 30℃, the calibrated argon flow rate is 50mL / min, and the calibrated film thickness T1 is 103nm.

[0075] S8. Based on the calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1 after film thickness calibration, and based on the film thickness T2 of 111nm (i.e., the film thickness T2 is not less than the minimum thickness), the sputtering power P2 and sputtering time t2 of the film to be coated are selected according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged, i.e. (P2×t2)=T2 / T1×(P1×t1)=111nm / 103nm×(1KW×100s)=107.8KW·s. The sputtering power P2 of the film to be coated is selected as 3KW (i.e., not less than the minimum sputtering power), and the sputtering time t2 of the film to be coated is 35.9s (i.e., not less than the shortest sputtering time).

[0076] S9. Based on the process parameters of the film to be coated selected in step S8, magnetron sputtering is performed. Similarly, the internal space 14 in the cavity 1 is maintained the same as in step S3 (i.e., at 5mT).

[0077] S10, the thickness of the magnetron sputtered thin film from step S9 is measured using a slicing method. Figure 4 And compare it with the thickness T2 of the film to be coated in step S8. From Figure 4 It can be seen that the thickness of the magnetron sputtered film measured in step S10 is in the range of 111-113 nm, which matches the thickness T2 of the film to be deposited in step S8, which is 111 nm, and is within the range allowed for production.

[0078] Example 2 (for aluminum (Al) thin films)

[0079] The method for adjusting the thickness of magnetron sputtering coatings follows these steps:

[0080] S1. Prepare substrate 200, which is a silicon wafer with a 90nm thick SiO2 dielectric layer.

[0081] S2. Select the process parameters for magnetron sputtering: sputtering power is 1KW, sputtering time is 60s, sputtering temperature is 150℃, process gas is argon and argon flow rate is 30mL / min, sputtering power is not less than the minimum sputtering power (minimum sputtering power is 1KW), and sputtering time is not less than the shortest sputtering time (shortest sputtering time is 20s).

[0082] S3, under the process parameters selected in step S2, magnetron sputtering is performed using magnetron sputtering equipment 100, the target material 300 is aluminum (Al) with a purity of 5.5N, and the internal space 14 in the cavity 1 is maintained at 3mT;

[0083] S4, the thickness of the thin film sputtered in step S3 was measured to be 83 nm using the slicing method. Figure 5 As shown;

[0084] S5, determine whether the measured film thickness is less than the minimum thickness (i.e., the minimum thickness determined in part A above is 20 nm). If the measured film thickness (i.e., 83 nm obtained in step S4) is greater than the minimum thickness, then no further action is required. Figure 2 Step S6 is followed by step S7;

[0085] S7, the calibrated sputtering power P1 after film thickness calibration is 1KW, the calibrated sputtering time t1 is 60s, the calibrated sputtering temperature is 150℃, the calibrated argon flow rate is 30mL / min, and the calibrated film thickness T1 is 83nm.

[0086] S8. Based on the calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1 after film thickness calibration, and based on the film thickness T2 of 300nm (i.e., the film thickness T2 is not less than the minimum thickness), the sputtering power P2 and sputtering time t2 of the film to be coated are selected according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged. That is, (P2×t2)=T2 / T1×(P1×t1)=300nm / 83nm×(1KW×60s)=216.9KW·s. The sputtering power P2 of the film to be coated is selected as 5KW (i.e., not less than the minimum sputtering power), and the sputtering time t2 of the film to be coated is 43.4s (i.e., not less than the shortest sputtering time).

[0087] S9. Based on the process parameters of the film to be coated selected in step S8, magnetron sputtering is performed. Similarly, the internal space 14 in the cavity 1 is maintained the same as in step S3 (i.e., at 3mT).

[0088] S10, the thickness of the magnetron sputtered thin film from step S9 is measured using a slicing method. Figure 6 And compare it with the thickness T2 of the film to be coated in step S8. From Figure 6 It can be seen that the thickness of the magnetron sputtered film measured in step S10 is 302 nm, which is very close to the thickness T2 of the film to be deposited in step S8, which is 300 nm, and is within the range allowed for production.

[0089] Example 3 (for titanium nitride (TiN) thin films)

[0090] The method for adjusting the thickness of magnetron sputtering coatings follows these steps:

[0091] S1, Prepare substrate 200, which is a silicon wafer;

[0092] S2. Select the process parameters for magnetron sputtering: sputtering power is 3KW, sputtering time is 150s, sputtering temperature is 30℃, process gases are argon and nitrogen with argon flow rate of 30mL / min and nitrogen flow rate of 80mL / min, sputtering power is not less than the minimum sputtering power (minimum sputtering power is 1KW), and sputtering time is not less than the shortest sputtering time (shortest sputtering time is 20s).

[0093] S3, under the process parameters selected in step S2, magnetron sputtering is performed using magnetron sputtering equipment 100, and the target material 300 is titanium (Ti) with a purity of 5N;

[0094] S4, the thickness of the thin film sputtered in step S3 is measured to be 100 nm using a slicing method. Figure 7 As shown;

[0095] S5, determine whether the measured film thickness is less than the minimum thickness (i.e., the minimum thickness determined in part A above is 20 nm). If the measured film thickness (i.e., 100 nm obtained in step S4) is greater than the minimum thickness, then no further action is required. Figure 2 Step S6 is followed by step S7;

[0096] S7, the calibrated sputtering power P1 after film thickness calibration is 3KW, the calibrated sputtering time t1 is 150s, the calibrated sputtering temperature is 30℃, the calibrated argon flow rate is 30mL / min, the calibrated nitrogen flow rate is 80mL / min, and the calibrated film thickness T1 is 100nm.

[0097] S8. Based on the calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1 after film thickness calibration, and based on the film thickness T2 of 133nm (i.e., the film thickness T2 is not less than the minimum thickness), the sputtering power P2 and sputtering time t2 of the film to be coated are selected according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged. That is, (P2×t2)=T2 / T1×(P1×t1)=133nm / 100nm×(3KW×150s)=598.5KW·s. The sputtering power P2 of the film to be coated is selected as 6KW (i.e., not less than the minimum sputtering power), and the sputtering time t2 of the film to be coated is 99.8s (i.e., not less than the shortest sputtering time).

[0098] S9. Based on the process parameters of the film to be coated selected in step S8, magnetron sputtering is performed. Similarly, the internal space 14 in the cavity 1 is maintained the same as in step S3 (i.e., at 7mT).

[0099] S10, the thickness of the magnetron sputtered thin film from step S9 is measured using a slicing method. Figure 8 And compare it with the thickness T2 of the film to be coated in step S8. From Figure 8 It can be seen that the thickness of the magnetron sputtered film measured in step S10 is 131 nm, which is very close to the thickness T2 of the film to be deposited in step S8, which is 133 nm, and is within the range allowed for production.

[0100] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.

Claims

1. A method for adjusting the thickness of a magnetron sputtering coating, characterized in that, Including the following steps: S1, Prepare the substrate; S2, Select process parameters for magnetron sputtering that include at least sputtering power, sputtering time, sputtering temperature, and working gas flow rate, with sputtering power not less than the minimum sputtering power and sputtering time not less than the minimum sputtering time; S3, magnetron sputtering is performed under the selected process parameters; S4, Measure the thickness of the thin film sputtered by magnetron sputtering; S5. Determine whether the measured thickness of the film is greater than the minimum thickness. If the measured thickness of the film is less than the minimum thickness, proceed to step S6. If the measured thickness of the film is not less than the minimum thickness, proceed to step S7. S6, adjust the sputtering power and / or sputtering time, and return to step S2 to perform the cycle from step S2 to step S5; S7, obtain the calibrated sputtering power P1, calibrated sputtering time t1, calibrated sputtering temperature, calibrated working gas flow rate, and calibrated film thickness T1 after film thickness calibration; S8. Based on the calibrated sputtering power P1, calibrated sputtering time t1, and calibrated film thickness T1 after film thickness calibration, and based on the thickness T2 of the film to be coated, select the sputtering power P2 and the sputtering time t2 of the film to be coated according to T2 / T1=(P2×t2) / (P1×t1), while other process parameters are selected to remain unchanged. Among them, the thickness T2 of the film to be coated is not less than the minimum thickness, the sputtering power P2 of the film to be coated is not less than the minimum sputtering power, and the sputtering time t2 of the film to be coated is not less than the minimum sputtering time. S9, magnetron sputtering is performed based on the selected process parameters of the film to be coated; S10, Measure the thickness of the magnetron sputtered film and compare it with the thickness T2 of the film to be deposited in step S8; In step S5, the minimum thickness is the minimum value of the film thickness when the film thickness and the film growth rate are established by changing the sputtering time while keeping other process parameters of magnetron sputtering unchanged. This is determined by finding the minimum value of the film thickness when the film growth rate reaches a stable state and thereafter exhibits a linear relationship between the film thickness and the sputtering time.

2. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In steps S2 and S8, the minimum sputtering power is 1 kW and the minimum sputtering time is 20 s.

3. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In step S2, the selected sputtering power is in the range of 1KW-5KW, the selected sputtering time is in the range of 20-150s, the selected working gas flow rate is in the range of 30-100mL / min, and the selected sputtering temperature is in the range of 30-300°C.

4. The method for adjusting the thickness of magnetron sputtering coating according to claim 3, characterized in that, In step S2, For titanium thin films, the selected sputtering power is 1KW, the selected sputtering time is 100s, the working gas is argon, the selected argon flow rate is 50mL / min, and the selected sputtering temperature is 30°C. For aluminum thin films, the selected sputtering power is 1KW, the selected sputtering time is 60s, the working gas is argon, the selected argon flow rate is 30mL / min, and the selected sputtering temperature is 150°C. For titanium nitride thin films, the selected sputtering power is 3KW, the selected sputtering time is 150s, the working gases are argon and nitrogen, the selected argon flow rate is 30mL / min, the selected nitrogen flow rate is 80mL / min, and the selected sputtering temperature is 30°C.

5. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In step S5, the minimum thickness is 20 nm.

6. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In step S6, the sputtering power or sputtering time is adjusted.

7. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In steps S3 and S9, the target material for magnetron sputtering is made of titanium or aluminum.

8. The method for adjusting the thickness of magnetron sputtering coating according to claim 1, characterized in that, In steps S3 and S9, the magnetron sputtering pressure is 2-10 mT.

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