Backlight module and display module

Abstract

The application discloses a backlight module and a display module. The backlight module comprises a substrate, a light emitting device arranged on the substrate, and a color conversion layer arranged on a light emitting surface of the light emitting device. The color conversion layer comprises a main body part, the main body part is located in a light emitting area of the light emitting device, and a gap is formed between the main body part and the light emitting device. The distance between the color conversion layer and the light emitting device is set according to the fact that at least part of the main body part receives more energy of light emitting intensity than energy of heat radiation emitted by the light emitting device, so that the part of the main body part receives less heat radiation energy and has a low failure probability, and the part of the main body part receives more light intensity energy and has a high color conversion efficiency. The display module comprises the backlight module.

Description

Technical Field

[0001] This application belongs to the field of display technology, specifically relating to backlight modules and display modules. Background Technology

[0002] In a backlight module, the color conversion layer undergoes color conversion upon being excited by light from the light-emitting device. The stronger the light intensity, the higher the excitation efficiency, and the higher the color conversion efficiency of the color conversion layer. Generally, the closer the color conversion layer is to the light-emitting device, the stronger the light intensity it receives. However, the light-emitting device generates heat during operation, causing the color conversion layer to heat up. Excessive temperature can cause the color conversion material in the color conversion layer to fail, preventing the layer from achieving color conversion. If the distance between the color conversion layer and the light-emitting device is too small, color conversion layer failure will occur; if the distance is too large, low color conversion efficiency will result.

[0003] Therefore, there is an urgent need for a backlight module that can reasonably set the distance between the color conversion layer and the light-emitting device, so that the color conversion layer can be subjected to high excitation energy under the premise of low probability of thermal failure, thereby achieving high color conversion efficiency. Summary of the Invention

[0004] The purpose of this application is to provide a backlight module and a display module, which reasonably sets the distance between the color conversion layer and the light-emitting device, so that the color conversion layer is subjected to high excitation energy under the premise of low probability of thermal failure, thereby achieving high color conversion efficiency.

[0005] To address the aforementioned technical problems, this application provides a backlight module, the backlight module comprising:

[0006] substrate;

[0007] A light-emitting device is disposed on the substrate, and the light-emitting device emits light and thermal radiation;

[0008] A color conversion layer is disposed on the light-emitting surface of the light-emitting device.

[0009] The color conversion layer includes a main body portion. The main body portion is located within the light-emitting region of the light-emitting device, and a gap exists between the main body portion and the light-emitting device. At least a portion of the main body portion receives energy from the luminous intensity of the light-emitting device that is greater than the energy from the thermal radiation emitted by the light-emitting device.

[0010] In one embodiment, the light-emitting area of ​​the light-emitting device includes multiple connected corner regions in a clockwise direction. The main body includes multiple continuously arranged unit sub-parts, one of which is located within a corner region. The energy of the light-emitting intensity received by each unit sub-part is greater than the energy of the thermal radiation emitted by the light-emitting device.

[0011] In one embodiment, each of the unit sub-units receives energy dQ from the luminous intensity of the light-emitting device. l Satisfy the following formula:

[0012]

[0013] Each of the unit sub-units receives energy dQ from the thermal radiation emitted by the light-emitting device. h Satisfy the following formula:

[0014]

[0015] Each of the unit sub-units receives energy dQ from the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now:

[0016]

[0017] in, k′1=C·m·k1.

[0018] The unit sub-part has a micro-element surface, which is the energy-receiving surface of the unit sub-part facing the center of the light-emitting device, and the line connecting the center of the micro-element surface and the center of the light-emitting device is a central straight line.

[0019] I0 is the luminous intensity of the light-emitting device, k is the number of photons per unit luminous intensity, λ is the wavelength of light, c is the speed of light, h is Planck's constant, e is the natural constant, r0 is the normal distance from the center of the micro-element surface to the center of the light-emitting device, θ is the angle between the central line and the normal vector of the micro-element surface, α is the angle of the light-emitting region, C is the specific heat of the unit sub-unit, m is the mass of the unit sub-unit, k1 is the initial energy and time constant of the light-emitting device, and k2 is the time constant.

[0020] In one embodiment, a function f(cosθ) is constructed with cosθ as the independent variable, and each unit subunit receives energy dQ from the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now:

[0021]

[0022] The function f(cosθ) in It reaches a minimum value at that point. B = 3k²;

[0023] when In the domain In the given information, the range of values ​​for r0 is...

[0024]

[0025] In one embodiment, a function f(cosθ) is constructed with cosθ as the independent variable, and each unit subunit receives energy dQ from the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now:

[0026]

[0027] The function f(cosθ) in It reaches a minimum value at that point. B = 3k²;

[0028] when In the domain In the given information, the range of values ​​for r0 is...

[0029]

[0030] In one embodiment, a function f(cosθ) is constructed with cosθ as the independent variable, and each unit subunit receives energy dQ from the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now:

[0031]

[0032] The function f(cosθ) in It reaches a minimum value at that point. B = 3k²;

[0033] when In the domain In the given information, the range of values ​​for r0 is...

[0034]

[0035] In one embodiment, the backlight module further includes a solder resist layer and a planarization layer.

[0036] The solder resist layer is disposed on the substrate. The solder resist layer has an opening. The light-emitting device is located in the opening.

[0037] The planarization layer is disposed on the solder resist layer and covers the light-emitting device.

[0038] The color conversion layer is disposed on the planarization layer, with a portion of the planarization layer located within the intervals. In the main body, the micro-element surfaces of each unit sub-part are coplanar, and the normal distance between each micro-element surface is equal. The color conversion layer also includes an auxiliary part located outside the light-emitting area, and the auxiliary part is connected between the main body portions.

[0039] In one embodiment, the backlight module further includes a solder resist layer. The solder resist layer is disposed on the substrate. The solder resist layer has an opening. The light-emitting device is located in the opening.

[0040] The color conversion layer is disposed on the solder mask layer. A groove is recessed on the side of the color conversion layer near the light-emitting device, and one groove is correspondingly disposed on one light-emitting device. An air layer is spaced between the surface of the light-emitting device and the groove. The color conversion layer also includes an auxiliary portion located outside the light-emitting area and connected to the main body portions.

[0041] In one embodiment, the backlight module further includes a solder mask layer.

[0042] The solder resist layer is disposed on the substrate. The solder resist layer has an opening. The light-emitting device is located in the opening.

[0043] A main body portion is correspondingly disposed on a light-emitting device. The main body portion is convex arc-shaped. The main body portion has a convex arc surface, which is the energy-receiving surface of the main body portion facing the light-emitting device. An air layer is separated between the convex arc surface and the light-emitting device.

[0044] This application also provides a display module, which includes a display panel and the aforementioned backlight module. The display panel is disposed on the light-emitting surface of the backlight module.

[0045] The backlight module provided in this application includes a substrate, a light-emitting device disposed on the substrate, and a color conversion layer disposed on the light-emitting surface of the light-emitting device. The color conversion layer includes a main body portion located within the light-emitting area of ​​the light-emitting device, and a gap exists between the main body portion and the light-emitting device. In this application, at least a portion of the main body portion receives energy of luminous intensity greater than the energy of thermal radiation emitted by the light-emitting device. This distance between the color conversion layer and the light-emitting device is designed so that the portion of the main body portion receives less thermal radiation energy, resulting in a low probability of thermal failure, while receiving greater luminous intensity energy, thus achieving high color conversion efficiency. The display module provided in this application includes a display panel and the aforementioned backlight module. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 This is a schematic cross-sectional view of the backlight module provided in the first embodiment of this application;

[0048] Figure 2 yes Figure 1 Enlarged structural diagram at point A;

[0049] Figure 3 This is a schematic cross-sectional view of the backlight module provided in the second embodiment of this application;

[0050] Figure 4 yes Figure 3 Enlarged structural diagram at point B;

[0051] Figure 5 This is a schematic cross-sectional view of the backlight module provided in the third embodiment of this application;

[0052] Figure 6 yes Figure 5 Enlarged structural diagram at point C;

[0053] Figure 7 This is a schematic diagram of the cross-sectional structure of the display module provided in the fourth embodiment of this application.

[0054] Reference numerals: Display module 1000; Backlight module 100; Display panel 200;

[0055] Substrate 110; Light-emitting device 120; Solder resist layer 130; Color conversion layer 140; Air layer 150; Planarization layer 160; Optical layer 170;

[0056] Array substrate 210; liquid crystal layer 220; color filter substrate 230;

[0057] Main body 141; Middle part 1411; Lateral part 1412; Unit sub-part 141a; Micro-element surface s; Auxiliary part 142;

[0058] Light-emitting area R; corner area ra; interval G; opening K; groove U; convex arc surface T. Detailed Implementation

[0059] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Based on the embodiments of the present invention, modifications made by those skilled in the art without inventive effort are all within the scope of protection of the present invention.

[0060] It should be noted that, in the description of this application, the orientations or positional relationships indicated by terms such as "upper," "lower," "front," "back," "left," "right," "inner," and "outer" are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0061] Please refer to Figure 1 and Figure 2 This application provides a backlight module 100 according to a first embodiment. The backlight module 100 includes a substrate 110, a light-emitting device 120 disposed on the substrate 110, and a color conversion layer 140 disposed on the light-emitting surface of the light-emitting device 120. The light-emitting device 120 emits light and thermal radiation. The color conversion layer 140 includes a main body 141 located within the light-emitting region R of the light-emitting device 120, and a gap G exists between the main body 141 and the light-emitting device 120. At least a portion of the main body 141 receives energy from the light intensity of the light-emitting device 120 that is greater than the energy from the thermal radiation emitted by the light-emitting device 120.

[0062] The backlight module 100 provided in this application embodiment has at least a portion of the main body 141 receiving energy of light intensity greater than the energy of heat radiation emitted by the light-emitting device 120. The distance between the color conversion layer 140 and the light-emitting device 120 is set so that the portion of the main body 141 receives less heat radiation energy and has a low probability of thermal failure, while receiving greater light intensity energy and having high color conversion efficiency.

[0063] Furthermore, the energy of the light intensity received by the entire main body 141 from the light-emitting device 120 is greater than the energy of the heat radiation emitted by the light-emitting device 120, thereby ensuring that the color conversion layer 140 that can receive light can maintain low heat and low failure probability, and have high color conversion efficiency due to large light intensity energy.

[0064] Specifically, the main body 141 of the color conversion layer 140 is divided into sections within the luminous angle range. In a clockwise direction, the luminous region R of the light-emitting device 120 includes multiple connected corner regions ra. The clockwise direction refers to the direction of clockwise rotation. The main body 141 includes multiple consecutively arranged unit sub-sections 141a. Each unit sub-section 141a is located within a corner region ra, and the energy received by each unit sub-section 141a from the luminous intensity of the light-emitting device 120 is greater than the energy received from the thermal radiation emitted by the light-emitting device 120. In this application, the function model is established based on the angular change between the energy-receiving point of the main body 141 and the center of the light-emitting device 120, i.e., the cosine value of this angular change is used as the independent variable. Dividing the luminous region R into corner regions ra in a clockwise direction is to illustrate the angular change between the energy-receiving point of the main body 141 and the center of the light-emitting device 120, so that each unit sub-section 141a corresponds to an angular range to establish the function. Meanwhile, using the corner region ra to correspond to the unit sub-section 141a can avoid inaccurate energy calculations caused by repeated energy calculations of the main body 141. The energy of the light intensity received by each unit sub-section 141a of the main body 141 from the light-emitting device 120 is greater than the energy of the thermal radiation emitted by the light-emitting device 120, thereby ensuring that each part of the main body 141 is subjected to low heat and has a low probability of thermal failure, and also has high color conversion efficiency.

[0065] By determining the luminous intensity and thermal radiation energy received by each unit sub-section 141a from the light-emitting device 120, it is ensured that the luminous intensity energy received by each part of the main body 141 from the light-emitting device 120 is greater than the thermal radiation energy received by the light-emitting device 120. In this application, the energy-receiving surface refers to the surface of the color conversion layer 140 irradiated by the light from the light-emitting device 120. By calculating the luminous intensity and thermal radiation energy received by the light-emitting device 120 on the energy-receiving surface, the luminous intensity and thermal radiation energy received by the light-emitting device 120 on the color conversion layer 140 can be obtained. By dividing the main body 141 into multiple unit sub-sections 141a, the corresponding energy-receiving surface is also divided into multiple micro-surfaces s. By using calculus to calculate the luminous intensity and thermal radiation energy received by the light-emitting device 120 on each micro-surface s, the luminous intensity and thermal radiation energy received by the light-emitting device 120 on each unit sub-section 141a are obtained and then compared.

[0066] Illuminance refers to the luminous flux received by a surface per unit area.

[0067] This application determines the energy of the light intensity received by the light-emitting device 120 and the energy of the thermal radiation emitted by the light-emitting device 120 in the unit sub-part 141a based on the following assumptions:

[0068] Hypothesis 1: The degree to which the energy of illuminance excites the color conversion material in the color conversion layer 140 is consistent with the degree to which the energy of thermal radiation causes the color conversion material in the color conversion layer 140 to become ineffective.

[0069] Assumption 2: At a certain moment, the attenuation of the luminous intensity and the attenuation of thermal radiation of the light-emitting device 120 are negligible;

[0070] Assumption 3: The luminous intensity or thermal radiation of the light-emitting device 120 is equal in all directions.

[0071] In this embodiment, the light-emitting device 120 is considered as a point light source and a point light source when it is in operation.

[0072] The energy dQ of the luminous intensity received by the light-emitting device 120 in each unit sub-section 141a l Perform the calculation:

[0073] The energy dE of a single photon is:

[0074]

[0075] Where λ is the wavelength of light, c is the speed of light, and h is Planck's constant.

[0076] Since luminous intensity is directly proportional to the number of photons, and the number of photons per unit luminous intensity is k, then the luminous intensity I0 possesses energy Q. s for:

[0077]

[0078] Since the luminous intensity of the light-emitting device 120 is equal in all directions, the equienergetic surface of the luminous intensity of the light-emitting device 120 is a sphere with uniform energy distribution. Each unit sub-part 141a has a micro-element surface s, which is the energy-receiving surface of the unit sub-part 141a facing the center of the light-emitting device 120. Therefore, the energy Q of the luminous intensity radiated by the light-emitting device 120 to the micro-element surface s at a distance r is... a for:

[0079]

[0080] It should be noted that in this application, the distance between the micro-element surface s and the light-emitting device 120 is based on the distance between the center of the micro-element surface s and the center of the light-emitting device 120, that is, the distance from the center of the micro-element surface s to the center of the light-emitting device 120 is r. r can be divided into a normal component r0 and a tangential component. The normal component refers to the component of r in the direction of the normal to the micro-element surface s, also known as the normal distance. The tangential component refers to the component of r in the direction of the tangent to the micro-element surface s. That is, in this application, the normal distance from the center of the micro-element surface s to the center of the light-emitting device 120 is r0.

[0081] The line connecting the center of the infinitesimal surface s and the center of the light-emitting device 120 is the central line. The angle between the central line and the normal vector of the infinitesimal surface s is θ. According to the law of cosines, r0 = rcosθ. Since the infinitesimal surface s is within the light-emitting region R of the light-emitting device 120, the angle θ is within the range of angle α within the light-emitting region R, i.e.

[0082] The energy dQ of the luminous intensity received by a micro-element surface s at a distance r from the light-emitting device 120. l Expressed as a formula containing cosθ, that is, the energy dQ of the luminous intensity received by each of the unit sub-parts 141a from the light-emitting device 120. l Satisfy the following formula:

[0083]

[0084] The energy Q of light received by the infinitesimal surface s a It can also be divided into components perpendicular to the infinitesimal surface s and components parallel to the infinitesimal surface s. Only energy perpendicular to the infinitesimal surface s can be absorbed. Therefore, dQ l It can be expressed as a formula containing cosθ.

[0085] The energy dQ of the thermal radiation emitted by the light-emitting device 120 received by each unit sub-section 141a h Perform the calculation:

[0086] Through Fourier transform and the law of conservation of energy, derived from the Fourier thermal conductivity differential equation, the temperature change of the micro-element surface s at a distance r from the light-emitting device 120 satisfies the following formula:

[0087]

[0088] Each micro-element surface s / unit sub-part 141a receives energy dQ from the thermal radiation emitted by the light-emitting device 120. h Satisfy the following formula:

[0089]

[0090] Where, k′1=C·m·k1.

[0091] e is the natural constant, C is the specific heat of unit sub-section 141a, m is the mass of unit sub-section 141a, and k1 is the initial energy Q of the light-emitting device 120. LED k1 is a constant of time τ, and k2 is a constant of time τ.

[0092] It should be noted that k1 and k2 are two time-dependent constants generated during the solution of the Fourier heat conduction equation. At a given time, k1 and k2 can be determined according to the datasheet of the light-emitting device 120 or through fitting tests.

[0093] Specifically, k1 and k2 satisfy the following formula:

[0094]

[0095] k2=4aτ

[0096] Among them, Q LED It is the heat emitted by the light-emitting device 120, C a Let ρ be the specific heat capacity of the space medium, ρ be the density of the space medium, a be the thermal conductivity of the space medium, and τ be time.

[0097] The heat Q emitted by the light-emitting device 120 LED This refers to the initial energy of the light-emitting device 120. The initial energy of the light-emitting device 120 is a characteristic parameter of the device, which can be determined according to the device's datasheet or calculated based on the operating current and voltage. a ρ and a are determined based on the space medium.

[0098] The included angle α of the light-emitting region R is also recorded in the datasheet of the light-emitting device 120. The included angle α of the light-emitting region R is the light-emitting angle of the light-emitting device 120.

[0099] Each unit sub-section 141a can achieve low thermal failure probability and high color conversion efficiency by satisfying the following formula. Each unit sub-section 141a receives energy dQ from the luminous intensity of the light-emitting device 120. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device 120 h Right now:

[0100]

[0101] in, k′1=C·m·k1.

[0102] Understandably, satisfying the above formula can greatly reduce the probability of thermal failure of the unit sub-section 141a due to excessive temperature. However, the energy dQ of the light-emitting device 120 receiving the light intensity is also a factor. l The energy dQ of the thermal radiation received by the light-emitting device 120 h The smaller the difference, the higher the color conversion efficiency of the unit sub-section 141a. Therefore, the energy dQ of the light-emitting device 120 that receives the light intensity is determined. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device 120 hThe minimum difference can be used to determine the normal distance r0 from unit sub-part 141a to light-emitting device 120 when the probability of thermal failure is minimized and the color conversion efficiency is maximized.

[0103] In this embodiment, a function f(cosθ) is further constructed with cosθ as the independent variable, and each unit sub-unit 141a receives the energy dQ of the luminous intensity of the light-emitting device 120. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device 120 h Right now:

[0104]

[0105] Simplify and differentiate the function f(cosθ), the derivative function g'(cosθ) is:

[0106] g′(cosθ)=2Acosθ+2Bcosθ·lncosθ+Bcosθ

[0107] in, B = 3k².

[0108] Let g'(cosθ) = 0, then find the function f(cosθ) in... It reaches a minimum value at that point.

[0109] Due to the domain

[0110] In the first case, when the minimum value is less than or equal to the domain, the minimum value is... Obtained from;

[0111] That is, when When, the range of values ​​for r0 is...

[0112]

[0113] In the second case, when the minimum value is within the domain, the minimum value is... Obtained from;

[0114] That is, when When, the range of values ​​for r0 is...

[0115]

[0116] In the third case, when the minimum value is greater than or equal to the domain, the minimum value is obtained at cosθ = 1.

[0117] That is, when When, the range of values ​​for r0 is...

[0118]

[0119] When the normal distance r0 from the center of the micro-element surface s of the unit sub-part 141a to the center of the light-emitting device 120 satisfies the above-mentioned value range, the color conversion layer 140 can achieve higher color conversion efficiency and has a lower possibility of thermal failure.

[0120] In this embodiment, the wavelength λ of the light emitted by the light-emitting device 120 is 400–480 nanometers (nm). The light-emitting device 120 emits blue light, and part of the blue light is effectively converted into green and red light by the color conversion layer 140. The converted green and red light mixes with the unconverted portion to form white light emitted.

[0121] Optionally, the color conversion layer 140 includes a color conversion material, such as phosphors, quantum dots, or other fluorescent materials.

[0122] In this embodiment, the backlight module 100 can be a mini-LED backlight module 100 or a micro-LED backlight module 100.

[0123] In this embodiment, the backlight module 100 further includes a solder resist layer 130 and a planarization layer 160. The solder resist layer 130 is disposed on the substrate 110 and has an opening K. The light-emitting device 120 is located in the opening K. The planarization layer 160 is disposed on the solder resist layer 130 and covers the light-emitting device 120. The color conversion layer 140 is disposed on the planarization layer 160, and a portion of the planarization layer 160 is located in the spacing G.

[0124] In this embodiment, the space medium is planarization layer 160, therefore, C a ρ is the specific heat capacity of planarization layer 160, ρ is the density of planarization layer 160, and a is the thermal conductivity of planarization layer 160.

[0125] Optionally, the backlight module 100 also includes an optical layer 170. The optical layer 170 is disposed on the color conversion layer 140.

[0126] In the main body 141, the micro-surfaces s of each unit sub-part 141a are coplanar. That is, the micro-surfaces s of each unit sub-part 141a are located on the same plane. The main body 141 is disposed on the planarization layer 160 to form the gap G between the main body 141 and the light-emitting device 120. Since the micro-surfaces s of each unit sub-part 141a are coplanar and the normal distance r0 of each micro-surface s is equal, the thickness of the planarization layer 160 can be set so that the normal distance r0 of the micro-surfaces s of each unit sub-part 141a is within the target range. The color conversion layer 140 also includes an auxiliary part 142, which is located outside the light-emitting region R and is connected between the main bodies 141.

[0127] Optionally, the energy-receiving surface of the main body 141 facing the light-emitting device 120 includes a first plane and a second plane, which are parallel but do not coincide. A portion of the continuous unit sub-parts 141a has micro-surfaces s located on the first plane, and another portion of the continuous unit sub-parts 141a has micro-surfaces s located on the second plane. The unit sub-parts 141a with micro-surfaces s located on the first plane have the same first normal distance r. 01 The infinitesimal surface s located in the second plane has the same second normal distance r between the element sub-parts 141a. 02 The first normal distance r 01 Second normal distance r 02 All are within the target range, thus resulting in a low probability of thermal failure and high color conversion efficiency for the main body 141.

[0128] Please refer to Figure 3 and Figure 4 The second embodiment of this application provides a backlight module 100. The difference between this embodiment and the first embodiment is that the structure of the planarization layer 160 and the color conversion layer 140 is different.

[0129] Specifically, the backlight module 100 also includes a solder resist layer 130. The solder resist layer 130 is disposed on the substrate 110. The solder resist layer 130 has an opening K. The light-emitting device 120 is located in the opening K. A color conversion layer 140 is disposed on the solder resist layer 130. The color conversion layer 140 has a recess U on the side near the light-emitting device 120. A recess U is correspondingly disposed on a light-emitting device 120. An air layer 150 is spaced G between the surface of the light-emitting device 120 and the recess U. The color conversion layer 140 also includes an auxiliary portion 142. The auxiliary portion 142 is located outside the light-emitting area R. The auxiliary portion 142 is connected to the main body portion 141.

[0130] An air layer 150 is provided between the surface of the light-emitting device 120 and the groove U, which improves the light emission efficiency of the light-emitting device 120, reduces the light loss between the light-emitting device 120 and the main body 141 caused by the planarization layer 160 or other film layers, and avoids the influence of the film layers between the light-emitting device 120 and the main body 141 on the energy received by the main body 141.

[0131] In this embodiment, the space medium is air layer 150, therefore, C a ρ is the specific heat capacity of air, ρ is the density of air, and a is the thermal conductivity of air.

[0132] Optionally, a scattering layer or other functional film layer is disposed between the light-emitting device 120 and the main body 141. The space medium is the scattering layer or other functional film layer. Correspondingly, C aρ is the specific heat capacity of the scattering layer or other functional film, ρ is the density of the scattering layer or other functional film, and a is the thermal conductivity of the scattering layer or other functional film.

[0133] In this embodiment, the main body 141 includes a middle portion 1411 and a side portion 1412. The side portion 1412 connects the middle portion 1411 and the auxiliary portion 142. The surface of the middle portion 1411 facing the light-emitting device 120 is a first plane, which is the energy-receiving surface of the middle portion 1411. The surface of the side portion 1412 facing the light-emitting device 120 is a second plane, which is the energy-receiving surface of the side portion 1412. The first plane and the second plane intersect. The micro-element surfaces s of the plurality of unit sub-parts of the middle portion 1411 are all located on the first plane, and the micro-element surfaces s of the plurality of unit sub-parts of the side portion 1412 are all located on the second plane. The unit sub-parts 141a with micro-element surfaces s located on the first plane have the same first normal distance r. 01 The infinitesimal surface s located in the second plane has the same second normal distance r between the element sub-parts 141a. 02 The first normal distance r 01 Second normal distance r 02 All are within the target range, thus resulting in a low probability of thermal failure and high color conversion efficiency for the main body 141.

[0134] Please refer to Figure 5 and Figure 6 The third embodiment of this application provides a backlight module 100. The difference between this embodiment and the first embodiment is that the structure of the color conversion layer 140 is different and the positional relationship between the color conversion layer 140 and the planarization layer 160 is different.

[0135] Specifically, the backlight module 100 also includes a solder resist layer 130. The solder resist layer 130 is disposed on the substrate 110. The solder resist layer 130 has an opening K. The light-emitting device 120 is located in the opening K. A main body portion 141 is correspondingly disposed on the light-emitting device 120. The main body portion 141 is convex arc-shaped, so that the main body portion 141 has a convex arc surface T. The convex arc surface T is the energy-receiving surface of the main body portion 141 facing the light-emitting device 120. An air layer 150 is spaced G between the convex arc surface T and the light-emitting device 120.

[0136] An air layer 150 is provided between the light-emitting device 120 and the convex arc surface T, which improves the light emission efficiency of the light-emitting device 120, reduces the light loss caused by the planarization layer 160 or other film layers between the light-emitting device 120 and the main body 141, and avoids the influence of the film layers between the light-emitting device 120 and the main body 141 on the energy received by the main body 141.

[0137] In this embodiment, the space medium is air layer 150, therefore, C aρ is the specific heat capacity of air, ρ is the density of air, and a is the thermal conductivity of air.

[0138] In this embodiment, the main body 141 is arc-shaped, and the convex arc surface T is an arc surface. Within the main body 141, the micro-element surface s of the unit sub-part 141a is located on the arc surface. The center of the arc surface is the center of the light-emitting device 120. The distance r from the center of the micro-element surface s of the unit sub-part 141a to the center of the light-emitting device 120 is the normal distance r0 from the center of the micro-element surface s to the center of the light-emitting device 120. That is, cosθ = 1.

[0139] When the normal distance r0 of the micro-element surface s of the unit sub-part 141a meets the target range, since the distance r from the center of the micro-element surface s of the unit sub-part 141a to the center of the light-emitting device 120 is the normal distance r0 from the center of the micro-element surface s to the center of the light-emitting device 120, compared with other shapes, the energy-receiving surface of the arc-shaped main body 141 can receive the energy of the light-emitting intensity more fully, reduce energy loss, and thus further improve the color conversion efficiency.

[0140] Optionally, the color conversion layer 140 includes an auxiliary portion 142. The auxiliary portion 142 is located outside the light-emitting region R of the light-emitting device 120. The auxiliary portion 142 is connected between the main body portion 141 and the solder mask layer 130.

[0141] In this embodiment, the backlight module 100 further includes a planarization layer 160 and an optical layer 170. The planarization layer 160 is disposed on the solder resist layer 130 and the color conversion layer 140, and the optical layer 170 is disposed on the planarization layer 160.

[0142] Please refer to Figure 7 The fourth embodiment of this application provides a display module 1000. The display module 1000 includes a display panel 200 and a backlight module 100 provided in the above embodiment. The display panel 200 is disposed on the light-emitting surface of the backlight module 100.

[0143] In this embodiment, the display panel 200 includes an array substrate 210, a liquid crystal layer 220, and a color filter substrate 230. The array substrate 210 is disposed on the backlight module 100, the liquid crystal layer 220 is disposed on the array substrate 210, and the color filter substrate 230 is disposed on the liquid crystal layer 220. The array substrate 210 and the color filter substrate 230 are disposed opposite to each other.

[0144] The backlight module 100 and display module 1000 provided in this application have been described in detail above.

[0145] The backlight module provided in this application includes a substrate, a light-emitting device disposed on the substrate, and a color conversion layer disposed on the light-emitting surface of the light-emitting device. The color conversion layer includes a main body located within the light-emitting area of ​​the light-emitting device, and a gap exists between the main body and the light-emitting device. This application sets the distance between the color conversion layer and the light-emitting device based on the principle that the energy of the light intensity received by the main body is greater than the energy of the thermal radiation emitted by the light-emitting device. This results in the main body of the color conversion layer receiving less thermal radiation energy and thus having a very low probability of thermal failure, while receiving greater light intensity energy and achieving high color conversion efficiency. The display module provided in this application includes a display panel and the aforementioned backlight module.

[0146] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

Claims

1. A backlight module, characterized in that, The backlight module includes: substrate; A light-emitting device is disposed on the substrate, and the light-emitting device emits light and thermal radiation; A color conversion layer is disposed on the light-emitting surface of the light-emitting device. The color conversion layer includes a main body portion located within the light-emitting area of ​​the light-emitting device, and there is a gap between the main body portion and the light-emitting device. At least a portion of the main body portion receives energy from the light-emitting intensity of the light-emitting device that is greater than the energy from the thermal radiation emitted by the light-emitting device. The light-emitting area of ​​the light-emitting device includes multiple connected corner regions, and the main body includes multiple continuously arranged unit sub-parts. One unit sub-part is located in a corner region. The energy of the light-emitting intensity received by each unit sub-part from the light-emitting device is greater than the energy of the thermal radiation emitted by the light-emitting device. The energy dQ of the light-emitting intensity received by each unit sub-part from the light-emitting device is... l Satisfy the following formula: Each of the unit sub-units receives energy dQ from the thermal radiation emitted by the light-emitting device. h Satisfy the following formula: Each of the unit sub-units receives energy dQ from the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now: in, ; The unit sub-part has a micro-element surface, which is the energy-receiving surface of the unit sub-part facing the center of the light-emitting device, and the line connecting the center of the micro-element surface and the center of the light-emitting device is a central straight line; I0 is the luminous intensity of the light-emitting device, k is the number of photons per unit luminous intensity, λ is the wavelength of light, c is the speed of light, h is Planck's constant, e is the natural constant, r0 is the normal distance from the center of the micro-element surface to the center of the light-emitting device, θ is the angle between the central line and the normal vector of the micro-element surface, α is the angle of the light-emitting region, C is the specific heat of the unit sub-section, m is the mass of the unit sub-section, k1 is the initial energy and time constant of the light-emitting device, and k2 is the time constant. A function f(cosθ) is constructed with cosθ as the independent variable, and the energy dQ of the luminous intensity received by each unit subunit from the light-emitting device is represented. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now: The function f(cosθ) in It obtains a minimum value at that point. , ; when In the domain In the given information, the range of values ​​for r0 is... ； Alternatively, a function f(cosθ) can be constructed with cosθ as the independent variable, where each unit subunit receives the energy dQ of the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now: The function f(cosθ) in It obtains a minimum value at that point. , ; when In the domain In the given information, the range of values ​​for r0 is... ； Alternatively, a function f(cosθ) can be constructed with cosθ as the independent variable, where each unit subunit receives the energy dQ of the luminous intensity of the light-emitting device. l Greater than the energy dQ of the thermal radiation emitted by the light-emitting device h Right now: The function f(cosθ) in It obtains a minimum value at that point. , ; when In the domain In the given information, the range of values ​​for r0 is... 。 2. The backlight module according to claim 1, characterized in that, The backlight module also includes a solder resist layer and a planarization layer; The solder resist layer is disposed on the substrate, and the solder resist layer has an opening, in which the light-emitting device is located; The planarization layer is disposed on the solder resist layer and covers the light-emitting device; The color conversion layer is disposed on the planarization layer, and a portion of the planarization layer is located in the interval; in the main body, the micro-element surfaces of each unit sub-part are coplanarly disposed, and the normal distance of each micro-element surface is equal; the color conversion layer also includes an auxiliary part, which is located outside the light-emitting area and is connected between the main body parts.

3. The backlight module according to claim 1, characterized in that, The backlight module also includes a solder resist layer disposed on the substrate, the solder resist layer having an opening, and the light-emitting device being located in the opening; The color conversion layer is disposed on the solder resist layer. The color conversion layer has a recessed groove on the side near the light-emitting device. Each groove is disposed on a corresponding light-emitting device. An air layer is spaced between the surface of the light-emitting device and the groove. The color conversion layer also includes an auxiliary part located outside the light-emitting area and connected between the main body parts.

4. The backlight module according to claim 1, characterized in that, The backlight module also includes a solder mask layer; The solder resist layer is disposed on the substrate, and the solder resist layer has an opening, in which the light-emitting device is located; A main body portion is disposed on a light-emitting device. The main body portion is convex arc-shaped and has a convex arc surface. The convex arc surface is the energy-receiving surface of the main body portion facing the light-emitting device, and an air layer is separated between the convex arc surface and the light-emitting device.

5. A display module, characterized in that, The display module includes a display panel and a backlight module as described in any one of claims 1 to 4, wherein the display panel is disposed on the light-emitting surface of the backlight module.

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