Exposure apparatus and exposure method for manufacturing a substrate

Abstract

Embodiments of the present application disclose an exposure device and an exposure preparation method of a substrate. A first setting position, a second setting position, a third setting position and a fourth setting position are sequentially arranged along a propagation path of an optical path. The exposure device comprises a light source assembly, a projection objective and a carrier, the light source assembly is arranged in the first setting position. The projection objective is arranged in the third setting position. The carrier is arranged in the fourth setting position, and the carrier is used for placing an external substrate. The second setting position is used for arranging an external mask plate, the mask plate comprises a first region and a second region arranged staggeredly, the first region is arranged opposite to the projection objective, and the projection objective is used for converging an angle of incident light rays passing through the first region. The present application aims to improve the preparation efficiency of different resolution accuracy patterns on the same substrate and save production time.

Description

Technical Field

[0001] This application relates to the field of exposure technology, specifically to an exposure apparatus and an exposure preparation method for a substrate. Background Technology

[0002] Photolithography is a technique that creates patterns on a substrate or silicon wafer coated with a photosensitive medium. It is used in the manufacture of integrated circuits (ICs) and their packaging, flat panel displays (FPDs), LED lighting, microelectromechanical systems (MEWS) devices, and other precision devices. The exposure apparatus in photolithography is a tool used to transfer the desired pattern onto a target area on a glass substrate or silicon wafer.

[0003] In the process of researching and practicing existing technologies, the inventors of this application discovered that when the fabrication specifications on the same substrate simultaneously contain low-resolution areas (minimum linewidth of approximately 2µm) and high-resolution areas (minimum linewidth of approximately 300nm), if a conventional exposure system used in panel manufacturing is employed, the minimum linewidth can only be at the micrometer level, making it impossible to simultaneously handle high-resolution areas. This necessitates changing the mask during the fabrication process, resulting in low wafer production efficiency. While high-precision exposure systems used in semiconductor manufacturing can achieve nanometer-level precision, the exposure field of such systems is relatively small (20–30mm). When fabricating low-resolution areas, this leads to excessively long exposure times and very low wafer production efficiency. Therefore, it is indeed necessary to develop an exposure device to overcome the shortcomings of existing technologies. Summary of the Invention

[0004] This application provides an exposure apparatus and a substrate exposure preparation method, which can improve the preparation efficiency of patterns with different resolutions on the same substrate and save production time.

[0005] This application provides an exposure device, wherein a first setting position, a second setting position, a third setting position, and a fourth setting position are sequentially arranged along the propagation path of the optical path. The exposure device includes:

[0006] A light source assembly, wherein the light source assembly is disposed at the first setting position;

[0007] A projection lens, wherein the projection lens is disposed in the third setting position; and

[0008] A carrier is disposed at the fourth mounting position and is used to place an external substrate.

[0009] The second setting position is used to set an external mask template, which includes a first region and a second region that are staggered. The first region is directly opposite the projection lens, and the projection lens is used to converge the angle of incident light passing through the first region.

[0010] Optionally, in some embodiments of this application, the exposure device further includes a baffle, which is movably disposed between the third setting position and the fourth setting position, and the baffle is used to block the first area of ​​the mask template.

[0011] Optionally, in some embodiments of this application, the exposure device further includes a position moving module for adjusting the position of the projection lens.

[0012] Optionally, in some embodiments of this application, the projection lens includes a plurality of overlapping condenser lenses.

[0013] Optionally, in some embodiments of this application, the light source assembly includes a light source and a light guide, the light source and the light guide being arranged sequentially along a first direction, and the light guide, the projection lens and the carrier being arranged sequentially along a second direction perpendicular to the first direction; the light guide is used to transmit light to the second setting position.

[0014] Optionally, in some embodiments of this application, the light source assembly further includes a movable component, the light guide includes a light outlet, the movable component is connected to the light guide, and the movable component is used to move the position of the light outlet.

[0015] Optionally, in some embodiments of this application, the magnification of the projection lens is greater than 1x and less than or equal to 20x.

[0016] Accordingly, this application also provides a method for preparing a substrate by exposure, which includes the following steps:

[0017] An exposure apparatus, a substrate, and a photomask are provided as described in any of the above, wherein a first pixel region and a second pixel region are disposed on the substrate;

[0018] The mask template is disposed at the second setting position. The mask template includes a first region and a second region that are staggered. The first pixel area, the projection lens and the first region are disposed opposite to each other. The second pixel area and the second region are disposed opposite to each other. A substrate is disposed on the carrier.

[0019] A first pattern is formed in the first pixel region of the substrate;

[0020] A first region of the photomask is masked, and a second pattern is formed in the second pixel region of the substrate, wherein the resolution of the first pattern is higher than the resolution of the second pattern.

[0021] Optionally, in some embodiments of this application, the first region includes a plurality of sub-exposure regions, the plurality of sub-exposure regions are arranged in an array, and the projection surface of the projection lens on the substrate is the same as the projection surface of one of the sub-exposure regions;

[0022] The projection lens moves and is sequentially positioned opposite to one of the sub-exposure areas.

[0023] Optionally, in some embodiments of this application, the exposure device further includes a baffle, the light source assembly includes a light source and a light guide, and the light guide includes a light outlet;

[0024] The step of masking a first region of the photomask and forming a second pattern in a second pixel region of the substrate, wherein the resolution of the first pattern is higher than the resolution of the second pattern, includes:

[0025] The baffle is positioned between the substrate and the mask, and coincides with the first region;

[0026] The light guide moves along a predetermined direction to scan and expose on the second pixel area of ​​the substrate to form the second pattern.

[0027] The exposure apparatus of this application employs a projection lens positioned on the light-emitting side of the mask setting position (second setting position). This projection lens is positioned directly opposite the first region of the mask, and converges the incident light passing through the first region. This allows a pattern smaller than the first region of the mask to be formed on the substrate, enabling the first and second regions on the same mask to form patterns of different resolutions on the substrate. In other words, without changing the mask, two photolithographic patterns with different resolutions can be formed on the same substrate, achieving the effect of precision processing even with conventional masks, thereby improving the efficiency of fabricating patterns of different resolutions on the same substrate. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the exposure apparatus provided in Embodiment 1 of this application;

[0030] Figure 2 This is a top view of the mask template of this application;

[0031] Figure 3This is a schematic diagram of the exposure apparatus provided in Embodiment 2 of this application;

[0032] Figure 4 This is a top view of the first region of the mask template of this application;

[0033] Figure 5 This is a top view of the substrate of this application;

[0034] Figure 6 This is a schematic flowchart of the substrate exposure preparation method provided in the embodiments of this application. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0036] This application provides an exposure apparatus and a method for exposing and preparing a substrate. These will be described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.

[0037] Example 1

[0038] Reference Figure 1 and Figure 2 Embodiment 1 of this application provides an exposure apparatus 100, which has a first setting position W1, a second setting position W2, a third setting position W3, and a fourth setting position W4 sequentially arranged along the propagation path of the light path. The exposure apparatus 100 includes a light source assembly 10, a projection lens 20, and a carrier 30.

[0039] The light source assembly 10 is located at the first setting position W1. The projection lens 20 is located at the third setting position W3. The carrier 30 is located at the fourth setting position W4, and the carrier 30 is used to place the external substrate N.

[0040] The second setting position W2 is used to set an external mask M. The mask M includes a first region M1 and a second region M2 that are offset from each other. The first region M1 is set directly opposite the projection lens 20. The projection lens 20 is used to converge the angle of the incident light rays passing through the first region M1. That is, the projection lens 20 is used to focus the incident light rays.

[0041] The exposure apparatus 100 of this application embodiment employs a projection lens 20 disposed on the light-emitting side of the photomask M setting position (second setting position W2). The projection lens 20 is positioned directly opposite the first region M1 of the photomask M, and converges the incident light passing through the first region M1. This allows a pattern smaller than the first region M1 of the photomask M to be formed on the substrate N, enabling the formation of patterns of different resolutions on the substrate N from the first region M1 and the second region M2 on the same photomask M. In other words, without changing the photomask, two photolithographic patterns with different resolutions can be formed on the same substrate N, achieving the effect of precision processing even with a conventional photomask M, thereby improving the efficiency of fabricating patterns of different resolutions on the same substrate N.

[0042] Optionally, the projection lens 20 includes multiple overlapping condenser lenses. The magnification of the projection lens 20 can be adjusted by increasing or decreasing the number of condenser lenses to meet the needs of preparing patterns at different resolutions. It should be noted that either identical condenser lenses can be used in an overlapping arrangement to facilitate the calculation of the condensation magnification of the projection lens 20, or condenser lenses with different magnifications can be used in an overlapping arrangement. This allows the desired condensation magnification of the projection lens 20 to be achieved with a smaller number of condenser lenses, which not only reduces the size of the exposure device 100 but also facilitates subsequent maintenance.

[0043] Optionally, the projection lens 20 has a magnification greater than 1x and less than or equal to 20x. It is understood that the focusing magnification of the projection lens 20 can be 2x, 5x, 10x, 15x, and 20x, etc. Specifically, when the focusing magnification of the projection lens 20 is 20x, and the minimum linewidth of the pattern on the mask M is approximately 2µm, then during the exposure preparation process, light passing through the second region M2 of the mask M forms a pattern with a linewidth of approximately 2µm on the substrate N, which is a micrometer-scale exposure pattern. Meanwhile, light passing through the first region M1 of the mask M, after being focused by the projection lens 20, forms a pattern with a linewidth of approximately 100 nanometers on the substrate N, which is a nanometer-scale exposure pattern. This allows for the formation of patterns of different resolutions on the same substrate N.

[0044] Reference Figure 1Optionally, the exposure apparatus 100 further includes a baffle 40, which is movably disposed between the third setting position W3 and the fourth setting position W4. The baffle 40 is used to block the first region M1 of the photomask M. It should be noted that the formation of the pattern of the first region M1 on the substrate N and the formation of the pattern of the second region M2 on the substrate N are performed separately. That is, the pattern of the first region M1 of the photomask M can be formed on the substrate N, and then the pattern of the second region M2 can be formed on the substrate N. Thus, when forming the pattern of the first region M1 of the photomask M on the substrate N, by moving the baffle 40 to offset it from the first region M1, the pattern of the first region M1 is formed on the substrate N. Then, by moving the baffle 40 to overlap it with the first region M1, when forming the pattern of the second region M2 of the photomask M on the substrate N, it is possible to effectively avoid affecting the pattern position of the substrate N relative to the first region M1, thereby ensuring the normal formation of the pattern on the substrate N. Furthermore, due to the baffle 40, a pattern of the second region M2 can be formed on the substrate N by scanning exposure.

[0045] Optionally, the light source assembly 10 includes a light source 11 and a light guide 12. The light source 11 and the light guide 12 are arranged sequentially along a first direction X, and the light guide 12, the projection lens 20, and the carrier 30 are arranged sequentially along a second direction Y perpendicular to the first direction. The light guide 12 is used to transmit light to the second setting position W2. The light source 11 can be a low-cost mercury lamp. The light guide 12 can be a reflective lens, so that the light from the light source 11 located at any position can be reflected and directed to the second setting position W2. In addition, the light source assembly 10 may also include an auxiliary condensing lens, which is located between the light source 11 and the light guide 12, so that the light emitted by the light source 11 is converged by the auxiliary condensing lens, improving the light utilization rate. Then the light is reflected by the light guide 12 to the second setting position W2. When the second setting position W2 is provided with a mask M, the light will illuminate the first area M1 and the second area M2 of the mask M to form patterns on the substrate N respectively.

[0046] Furthermore, the light source assembly 10 also includes a moving member 13, and the light guide 12 includes a light outlet 121. The moving member 13 is connected to the light guide 12 and is used to move the position of the light outlet 121. The position moving module 50 can be a robotic arm or a structure with a slider and rail that can move the light guide 12. By setting the moving member 13 to move the light guide 12, the position of the light outlet 121 of the light guide 12 can be moved synchronously. Thus, when multiple first regions M1 are provided on the mask M, the moving member 13 moves the light guide 12 so that its light outlet 121 coincides with the first region M1 facing one of the projection lenses 20. After the pattern of the first region M1 is formed on the substrate N, the moving member 13 moves the light guide 12 again so that its light outlet 121 coincides with the first region M1 facing another projection lens 20, thereby sequentially forming multiple patterns of the first region M1 on the substrate N. Alternatively, when the position of the projection lens 20 can be moved to be sequentially positioned relative to the first region M1, the moving member 13 can cause the light outlet 121 of the light guide 12 to move along with the projection lens 20, so that multiple patterns of the first region M1 can be sequentially formed on the substrate N. Alternatively, when scanning exposure is performed on the second region M2, the moving member 13 can move the light outlet 121 of the light guide 12 along a predetermined direction to scan exposure and form a pattern of the second region M2 on the substrate N, thereby increasing the fabrication efficiency. Thus, the arrangement of the moving member 13 broadens the applicability of the exposure apparatus 100.

[0047] Reference Figure 3 and Figure 4 Example 2: This example differs from the previous example in that the exposure apparatus 100 further includes a position moving module 50, which is used to adjust the position of the projection lens 20. The position moving module 50 can be a robotic arm or a structure with a slider and rail capable of moving the projection lens 20. Thus, when the area of ​​the projection lens 20 is smaller than the first region M1, the position of the projection lens 20 can be adjusted by the position moving module 50 to gradually form a pattern of the first region M1 on the substrate N. For example, when the first region M1 of the photomask M includes multiple sub-exposure regions m1, the area of ​​each sub-exposure region m1 is the same as the area of ​​the projection lens 20. The position moving module 50 moves the projection lens 20 to sequentially align it with one sub-exposure region m1, thereby sequentially forming a pattern of multiple sub-exposure regions m1 on the substrate N. Alternatively, when the photomask M includes multiple first regions M1, the position moving module 50 can adjust the position of the projection lens 20 to sequentially form a pattern of multiple first regions M1 on the substrate N. By setting up the position moving module 50, the applicability of the exposure device 100 is broadened.

[0048] Furthermore, in this embodiment, the light guide 12 of the light source assembly 10 includes a plurality of light exit ports 121, at least one of which is disposed opposite to the projection lens 20. Thus, when multiple first regions M1 are provided on the mask M, one light exit port 121 is disposed opposite to one first region M1. Therefore, light is emitted individually from the light exit port 121 opposite to the projection lens 20, while the other light exit ports 121 are closed. After the pattern of the first region M1 is formed on the substrate N, the projection lens 20 is moved to be disposed opposite to another first region M1, and the light exit port 121 disposed opposite to the projection lens 20 is individually controlled to emit light, thereby gradually forming multiple patterns of the first regions M1 on the substrate N.

[0049] Reference Figure 1 and Figure 6 Accordingly, this application also provides an exposure preparation method for substrate N, which includes the following steps:

[0050] B1: Provides an exposure apparatus 100, a substrate N and a photomask M as described in any of the above, wherein a first pixel region N1 and a second pixel region N2 are disposed on the substrate N;

[0051] B2: The mask M is set on the second setting position W2. The mask M includes a first region M1 and a second region M2 that are staggered. The first pixel region N1, the projection lens 20 and the first region M1 are arranged opposite to each other. The second pixel region N2 and the second region M2 are arranged opposite to each other. The substrate N is set on the carrier 30.

[0052] B3: A first pattern is formed in the first pixel region N1 of the substrate N;

[0053] B4: The first region M1 of the mask M is blocked, and a second pattern is formed in the second pixel region N2 of the substrate N, wherein the resolution of the first pattern is higher than the resolution of the second pattern.

[0054] The exposure fabrication method for substrate N in this embodiment employs a projection lens 20 positioned on the light-emitting side of the photomask M (second positioning position W2). This projection lens 20 is positioned directly opposite the first region M1 of the photomask M, and converges the incident light passing through the first region M1. This allows a smaller pattern than the first region M1 of the photomask M to be formed on the substrate N. Consequently, the first region M1 and the second region M2 on the same photomask M can form patterns of different resolutions on the substrate N. That is, without changing the photomask, two photolithographic patterns with different resolutions can be formed on the same substrate N, achieving the effect of precision fabrication even with a conventional photomask M, thereby improving the fabrication efficiency of different resolution patterns on the same substrate N.

[0055] The following describes the exposure preparation method for substrate N.

[0056] In step B1, an exposure apparatus 100, a substrate N, and a mask M as described in any of the above are provided, wherein a first pixel region N1 and a second pixel region N2 are disposed on the substrate N.

[0057] The structure of the exposure apparatus 100 in this embodiment is similar to or the same as that of the exposure apparatus 100 in the above embodiment. Please refer to the exposure apparatus 100 in the above embodiment for details. The substrate N can be a glass substrate N.

[0058] In step B2, the mask M is set on the second setting position W2. The mask M includes a first region M1 and a second region M2 that are staggered. The first pixel region N1, the projection lens 20 and the first region M1 are arranged opposite to each other. The second pixel region N2 and the second region M2 are arranged opposite to each other. The substrate N is set on the carrier 30.

[0059] Reference Figure 2 and Figure 5 The substrate N may have multiple arrayed first pixel regions N1, with second pixel regions N2 arranged around the multiple first pixel regions N1. Simultaneously, the photomask M also has multiple arrayed first regions M1, with second regions M2 arranged around the multiple first regions M1. When the photomask M includes multiple first regions M1, and the number of projection lenses 20 is one, the positions of the projection lenses 20 can be adjusted to sequentially form patterns of multiple first regions M1 on the substrate N. Alternatively, multiple projection lenses 20 can be provided, with one projection lens 20 positioned opposite to one first region M1.

[0060] In step B3, a first pattern is formed in the first pixel region N1 of the substrate N.

[0061] The following description uses the formation of a patterned pixel electrode layer as an example, but is not limited to this. The specific steps are as follows: a pixel electrode layer and a photoresist layer are formed sequentially on a substrate N. Then, a light source 11 is turned on. The light emitted by the light source 11 radiates through the light guide 12 to the first region M1 of the mask M. After being focused by the projection lens 20, the photoresist layer is exposed to form a patterned photoresist layer. Then, the pixel electrode layer is patterned using the photoresist layer as a mask to form a patterned pixel electrode layer. Finally, the photoresist layer is removed, thus forming a first pattern in the first pixel region N1.

[0062] Optionally, the first region M1 includes multiple sub-exposure regions m1, which are arranged in an array. The projection surface of the projection lens 20 on the substrate N is the same as the projection surface of one of the sub-exposure regions m1. The projection lens 20 moves and is sequentially positioned opposite to one of the sub-exposure regions m1.

[0063] The exposure apparatus 100 further includes a position moving module 50, which is used to adjust the position of the projection lens 20. The area of ​​the sub-exposure region m1 is the same as the area of ​​the projection lens 20. Thus, the position moving module 50 moves the projection lens 20 to be positioned opposite to a sub-exposure region m1 in sequence, thereby forming a pattern of multiple sub-exposure regions m1 on the substrate N in sequence.

[0064] In step B4, the first region M1 of the mask template M is blocked, and a second pattern is formed in the second pixel region N2 of the substrate N. The resolution of the first pattern is higher than that of the second pattern.

[0065] The formation of the pattern in the first region M1 and the formation of the pattern in the second region M2 on the substrate N are performed separately. This facilitates control over the formation process of the patterns in the first region M1 and the second region M2.

[0066] Optionally, the exposure apparatus 100 further includes a baffle 40, and the light source assembly 10 includes a light source 11 and a light guide 12, the light guide 12 including a light outlet 121. The step of blocking the first region M1 of the mask M and forming a second pattern in the second pixel region N2 of the substrate N, wherein the resolution of the first pattern is higher than the resolution of the second pattern, includes:

[0067] The baffle 40 is positioned between the substrate N and the mask M, and coincides with the first region M1;

[0068] The light guide 12's light outlet 121 moves along a predetermined direction to scan and expose on the second pixel region N2 of the substrate N to form the second pattern.

[0069] When forming the pattern of the second region M2 of the photomask M on the substrate N, moving the baffle 40 to overlap it with the first region M1 effectively avoids affecting the pattern position of the substrate N relative to the first region M1. Conversely, when forming the pattern of the first region M1 of the photomask M on the substrate N, moving the baffle 40 to offset it from the first region M1 ensures the normal formation of the pattern on the substrate N. Furthermore, the light outlet 121 of the light guide 12 moves along a predetermined direction, thus enabling the formation of the pattern of the second region M2 on the substrate N via scanning exposure.

[0070] The above provides a detailed description of an exposure apparatus and a substrate exposure preparation method provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An exposure apparatus, comprising a first setting position, a second setting position, a third setting position, and a fourth setting position arranged sequentially along the propagation path of an optical path, characterized in that, The exposure apparatus includes: A light source assembly, wherein the light source assembly is disposed at the first setting position; The projection lens is disposed in the third setting position; and A carrier is disposed at the fourth mounting position and is used to place an external substrate. A baffle, which is movably disposed between the third setting position and the fourth setting position; The second setting position is used to set an external mask template. The mask template includes a first region and a second region that are staggered. The first region is directly opposite the projection lens. The projection lens is used to converge the angle of incident light passing through the first region. The baffle is used to block the first region of the mask template.

2. The exposure apparatus as claimed in claim 1, characterized in that, The exposure device further includes a position movement module, which is used to adjust the position of the projection lens.

3. The exposure apparatus as described in claim 1, characterized in that, The projection lens includes multiple overlapping condenser lenses.

4. The exposure apparatus as claimed in claim 1, characterized in that, The light source assembly includes a light source and a light guide. The light source and the light guide are arranged sequentially along a first direction, and the light guide, the projection lens, and the carrier are arranged sequentially along a second direction perpendicular to the first direction. The light guide is used to transmit light to the second setting position.

5. The exposure apparatus as described in claim 4, characterized in that, The light source assembly further includes a movable component, the light guide includes a light outlet, the movable component is connected to the light guide, and the movable component is used to move the position of the light outlet.

6. The exposure apparatus as claimed in claim 1, characterized in that, The magnification of the projection lens is greater than 1x and less than or equal to 20x.

7. A method for preparing a substrate by exposure, characterized in that, Includes the following steps: An exposure apparatus, a substrate, and a photomask are provided as described in any one of claims 1 to 6, wherein a first pixel region and a second pixel region are disposed on the substrate, and the exposure apparatus further includes a baffle. The mask template is disposed at the second setting position. The mask template includes a first region and a second region that are staggered. The first pixel area, the projection lens and the first region are disposed opposite to each other. The second pixel area and the second region are disposed opposite to each other. A substrate is disposed on the carrier. A first pattern is formed in the first pixel region of the substrate; The baffle is positioned between the substrate and the photomask, and overlaps with the first region, to block the first region of the photomask and form a second pattern in the second pixel region of the substrate. The resolution of the first pattern is higher than that of the second pattern.

8. The exposure preparation method of the substrate as described in claim 7, characterized in that, The first region includes multiple sub-exposure regions, which are arranged in an array. The projection surface of the projection lens on the substrate is the same as the projection surface of one of the sub-exposure regions. The projection lens moves and is sequentially positioned opposite to one of the sub-exposure areas.

9. The exposure preparation method of the substrate as described in claim 7, characterized in that, The light source assembly includes a light source and a light guide, and the light guide includes a light outlet. The step of forming a second pattern in the second pixel region of the substrate, wherein the resolution of the first pattern is higher than the resolution of the second pattern, includes: The light guide moves along a predetermined direction to scan and expose on the second pixel area of ​​the substrate to form the second pattern.

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