Capacitor device and method of forming the same

Abstract

A capacitor device and a method for forming the same, wherein the structure comprises: a plurality of second metal layers stacked with a first metal layer, each second metal layer comprising a plurality of third finger-shaped electrode plates, each third finger-shaped electrode plate being stacked with a first finger-shaped electrode plate or a second finger-shaped electrode plate, each third finger-shaped electrode plate comprising a plurality of first conductive regions and second conductive regions spaced apart along a first direction, the first conductive region and the second conductive region having an insulating layer therebetween, the first conductive region and the second conductive region of two third finger-shaped electrode plates in the same layer being adjacent to each other, the first conductive region and the second conductive region of two third finger-shaped electrode plates in adjacent layers being adjacent to each other, the projection of the first conductive region on the substrate surface and the projection of the second conductive region on the substrate surface of two adjacent layers having a partial overlap, a third conductive plug electrically connecting the first conductive regions in adjacent second metal layers to each other, and a fourth conductive plug electrically connecting the second conductive regions in adjacent second metal layers to each other, thereby improving the capacitance density.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and in particular to a capacitor and a method for forming the same. Background Technology

[0002] In semiconductor integrated circuits, integrated capacitors fabricated on the same chip as transistor circuits are widely used. They mainly come in two forms: metal-insulator-metal (MIM) capacitors and metal-oxide-metal (MOM) capacitors. MIM capacitors use upper and lower metal layers as capacitor plates. Fabricating MIM capacitors generally requires additional photolithography layers, and the breakdown voltage of the capacitor dielectric layer and the capacitance size are inherently contradictory. Furthermore, planar capacitors typically require a large area, which is detrimental to device integration. MOM capacitors, on the other hand, use a combination of finger structures and stacked layers to fabricate larger capacitances in a relatively smaller area. In addition, MOM capacitors do not require additional photoresist layers and masks, making the fabrication process simpler and less expensive than that of MIM capacitors. However, due to limitations in the spacing between metal lines, existing lateral MOM capacitors cannot be made large and exhibit poor stability.

[0003] With the development of device miniaturization, how to increase the density of MOM capacitors has become one of the problems that urgently need to be solved by those skilled in the art. Summary of the Invention

[0004] The technical problem solved by the present invention is to provide a capacitor device and a method for forming the same, so as to improve the performance of semiconductor structures.

[0005] To solve the above-mentioned technical problems, the present invention provides a capacitor device, comprising: a substrate, the substrate including a base, a device layer located on the base, and a dielectric layer located on the surfaces of the base and the device layer, the device layer including an isolation structure and a device structure located within the isolation structure; a first metal layer located on the substrate, the first metal layer including a first electrode layer and a second electrode layer, the first electrode layer including a plurality of first finger-shaped electrodes, the second electrode layer including a plurality of second finger-shaped electrodes, the plurality of first finger-shaped electrodes and the plurality of second finger-shaped electrodes being parallel to a first direction and arranged along a second direction, the first direction and the second direction being perpendicular to each other, each of the first finger-shaped electrodes... The second finger-shaped electrode is located between two adjacent second finger-shaped electrodes; a plurality of second metal layers are stacked on the substrate with the first metal layer, each second metal layer including a plurality of third finger-shaped electrodes, the plurality of third finger-shaped electrodes being parallel to the first direction and arranged along the second direction, each third finger-shaped electrode being stacked with the first finger-shaped electrode or the second finger-shaped electrode respectively, each third finger-shaped electrode including a plurality of first conductive regions and second conductive regions spaced apart along the first direction, each first conductive region and second conductive region having an insulating layer between it, the first conductive regions and second conductive regions of two adjacent third finger-shaped electrodes in the same layer being adjacent, the third finger-shaped electrodes of two adjacent layers being adjacent to each other. The first conductive regions of the third finger-shaped electrode plates are adjacent, and the second conductive regions are also adjacent. Along the first direction, the lengths of the first conductive regions and the second conductive regions are different. The length of the first conductive region of the third finger-shaped electrode plate is greater than the length of the first conductive region of the adjacent third finger-shaped electrode plate, while the length of the second conductive region is less than the length of the second conductive region of the adjacent third finger-shaped electrode plate. Alternatively, the length of the first conductive region of the third finger-shaped electrode plate is less than the length of the first conductive region of the adjacent third finger-shaped electrode plate, while the length of the second conductive region is greater than the length of the second conductive region of the adjacent third finger-shaped electrode plate. The projection of the first conductive regions of two adjacent layers onto the substrate surface and the projection of the second conductive regions onto the substrate surface... The projections of the surfaces partially overlap; conductive plugs, including a first conductive plug, a second conductive plug, a third conductive plug, and a fourth conductive plug, wherein the first conductive plug electrically connects the first electrode layer to each first conductive region of the adjacent layer, the second conductive plug electrically connects the second electrode layer to each second conductive region of the adjacent layer, the third conductive plug electrically connects the first conductive regions of two adjacent second metal layers, and the fourth conductive plug electrically connects the second conductive regions of two adjacent second metal layers; a dielectric layer located on the substrate, wherein the first metal layer, the plurality of second metal layers, and the conductive plugs are located in the dielectric layer.

[0006] Optionally, it further includes: a third metal layer located on the plurality of second metal layers, the third metal layer including a third electrode layer and a fourth electrode layer, the third electrode layer including a plurality of fourth finger-shaped electrode plates, the fourth electrode layer including a plurality of fifth finger-shaped electrode plates, the plurality of fourth finger-shaped electrode plates and the plurality of fifth finger-shaped electrode plates being parallel to a first direction and arranged along a second direction, each of the fourth finger-shaped electrode plates being located between two adjacent fifth finger-shaped electrode plates, the fourth finger-shaped electrode plates being stacked with the first finger-shaped electrode plates, and the fifth finger-shaped electrode plates being stacked with the second finger-shaped electrode plates.

[0007] Optionally, the conductive plug further includes a fifth conductive plug and a sixth conductive plug, wherein the fifth conductive plug electrically connects the plurality of first conductive regions of the adjacent layer and the third electrode layer to each other, and the sixth conductive plug electrically connects the plurality of second conductive regions of the adjacent layer and the fourth electrode layer to each other.

[0008] Optionally, the first electrode layer further includes a first electrode terminal, the second electrode layer further includes a second electrode terminal, and the first electrode terminal and the second electrode terminal are located at opposite ends of the first metal layer along the first direction; each second metal layer further includes a third electrode terminal and a fourth electrode terminal located at opposite ends of the second metal layer along the first direction; the third electrode layer further includes a fifth electrode terminal, the fourth electrode layer further includes a sixth electrode terminal, and the fifth electrode terminal and the sixth electrode terminal are located at opposite ends of the third metal layer along the first direction.

[0009] Optionally, the method includes: the plurality of first finger-shaped electrode plates extending to be electrically connected to the first electrode terminal; the plurality of second finger-shaped electrode plates extending to be electrically connected to the second electrode terminal; the plurality of fourth finger-shaped electrode plates extending to be electrically connected to the fifth electrode terminal; and the plurality of fifth finger-shaped electrode plates extending to be electrically connected to the sixth electrode terminal.

[0010] Optionally, the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are all parallel to the second direction.

[0011] Optionally, the number of the plurality of second metal layers is greater than or equal to two layers.

[0012] Optionally, along the first direction, the distance between adjacent first conductive regions and second conductive regions ranges from 30 nm to 1000 nm; along the second direction, the distance between two adjacent third finger plates ranges from 30 nm to 5000 nm; and along the second direction, the width of each third finger plate ranges from 30 nm to 5000 nm.

[0013] Accordingly, the present invention also provides a method for forming a capacitor, comprising: providing a substrate; forming a first metal layer on the substrate, the first metal layer including a first electrode layer and a second electrode layer, the first electrode layer including a plurality of first finger-shaped electrodes, the second electrode layer including a plurality of second finger-shaped electrodes, the plurality of first finger-shaped electrodes and the plurality of second finger-shaped electrodes being parallel to a first direction and arranged along a second direction, the first direction and the second direction being perpendicular to each other, and each first finger-shaped electrode being located between two adjacent second finger-shaped electrodes; and forming a layer superimposed on the first metal layer. The system comprises a plurality of second metal layers, a first conductive plug and a second conductive plug located between the plurality of second metal layers and the first metal layer, and a third conductive plug and a fourth conductive plug between adjacent second metal layers. Each second metal layer includes a plurality of third finger-shaped electrodes, which are parallel to the first direction and arranged along the second direction. Each third finger-shaped electrode is stacked with either the first finger-shaped electrode or the second finger-shaped electrode. Each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along the first direction. Each first conductive region and second conductive region... An insulating layer exists between the regions. The first and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent. The first conductive regions and second conductive regions of two adjacent layers of third finger-shaped electrodes are also adjacent. Along the first direction, the lengths of the first and second conductive regions are different. The length of the first conductive region of a third finger-shaped electrode is greater than the length of the first conductive region of the third finger-shaped electrode in the adjacent layer, while the length of the second conductive region is less than the length of the second conductive region of the third finger-shaped electrode in the adjacent layer, or the length of the first conductive region of a third finger-shaped electrode is less than the length of the first conductive region of the third finger-shaped electrode in the adjacent layer. The length of the first conductive region is greater than the length of the second conductive region of the third finger plate of the adjacent layer. The projections of the first conductive regions of the two adjacent layers on the substrate surface and the projections of the second conductive regions on the substrate surface partially overlap. The first conductive plug connects the first electrode layer to each of the first conductive regions of the adjacent layers. The second conductive plug connects the second electrode layer to each of the second conductive regions of the adjacent layers. The third conductive plug connects the first conductive regions in the two adjacent second metal layers. The fourth conductive plug connects the second conductive regions in the two adjacent second metal layers.

[0014] Optionally, after forming the plurality of second metal layers, a third metal layer is formed. The third metal layer includes a third electrode layer and a fourth electrode layer. The third electrode layer includes a plurality of fourth finger-shaped electrodes, and the fourth electrode layer includes a plurality of fifth finger-shaped electrodes. The plurality of fourth finger-shaped electrodes and the plurality of fifth finger-shaped electrodes are parallel to a first direction and arranged along a second direction. Each fourth finger-shaped electrode is located between two adjacent fifth finger-shaped electrodes. The fourth finger-shaped electrodes are stacked with the first finger-shaped electrodes, and the fifth finger-shaped electrodes are stacked with the second finger-shaped electrodes.

[0015] Optionally, a fifth conductive plug and a sixth conductive plug are provided between the third metal layer and the plurality of second metal layers. The fifth conductive plug electrically connects the plurality of first conductive regions of the adjacent layer and the third electrode layer to each other, and the sixth conductive plug electrically connects the plurality of second conductive regions of the adjacent layer to the fourth electrode layer.

[0016] Optionally, the first electrode layer further includes a first electrode terminal, the second electrode layer further includes a second electrode terminal, and the first electrode terminal and the second electrode terminal are located at opposite ends of the first metal layer along the first direction; each second metal layer further includes a third electrode terminal and a fourth electrode terminal located at opposite ends of the second metal layer along the first direction; the third electrode layer further includes a fifth electrode terminal, the fourth electrode layer further includes a sixth electrode terminal, and the fifth electrode terminal and the sixth electrode terminal are located at opposite ends of the third metal layer along the first direction.

[0017] Optionally, the method includes: the plurality of first finger-shaped electrode plates extending to be electrically connected to the first electrode terminal; the plurality of second finger-shaped electrode plates extending to be electrically connected to the second electrode terminal; the plurality of fourth finger-shaped electrode plates extending to be electrically connected to the fifth electrode terminal; and the plurality of fifth finger-shaped electrode plates extending to be electrically connected to the sixth electrode terminal.

[0018] Optionally, the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are all parallel to the second direction.

[0019] Optionally, the number of the plurality of second metal layers is greater than or equal to two layers.

[0020] Optionally, along the first direction, the distance between adjacent first conductive regions and second conductive regions ranges from 30 nm to 1000 nm; along the second direction, the distance between two adjacent third finger plates ranges from 30 nm to 5000 nm; and along the second direction, the width of each third finger plate ranges from 30 nm to 5000 nm.

[0021] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0022] In the capacitor device provided by the present invention, a plurality of second metal layers are stacked on the substrate and superimposed on the first metal layer. Each second metal layer includes a plurality of third finger-shaped electrodes, and each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along a first direction. On one hand, the first conductive layer and the second conductive layer are respectively connected to different electrodes. The first conductive regions and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent, increasing the capacitance value between the first conductive layer and the second conductive layer in the same layer. On the other hand, a third conductive plug electrically connects the first conductive regions in two adjacent second metal layers, and a fourth conductive plug electrically connects the second conductive regions in two adjacent second metal layers. The capacitance generated between the third conductive plug and the fourth conductive plug increases the capacitance value of the device. In addition, there is partial overlap between the projection of the first conductive regions and the projection of the second conductive regions on the substrate surface of two adjacent layers, and the capacitance generated between the first conductive layers and the second conductive layers of adjacent layers also contributes to the capacitance value of the device. Therefore, the overall capacitance density of the device is improved.

[0023] In the method for forming a capacitor provided by the present invention, a plurality of second metal layers are formed and stacked with a first metal layer. Each second metal layer includes a plurality of third finger-shaped electrodes, and each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along a first direction. On one hand, the first conductive layer and the second conductive layer are respectively connected to different electrodes. The first conductive regions and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent, increasing the capacitance value between the first conductive layer and the second conductive layer in the same layer. On the other hand, a third conductive plug electrically connects the first conductive regions in two adjacent second metal layers, and a fourth conductive plug electrically connects the second conductive regions in two adjacent second metal layers. The capacitance generated between the third conductive plug and the fourth conductive plug increases the capacitance value of the device. In addition, there is partial overlap between the projection of the first conductive regions on the substrate surface and the projection of the second conductive regions on the substrate surface of two adjacent layers. The capacitance generated between the first conductive layers and the second conductive layers in adjacent layers also contributes to the capacitance value of the device. Therefore, the overall capacitance density of the device is improved. Attached Figure Description

[0024] Figures 1 to 3 This is a structural schematic diagram of a capacitor device;

[0025] Figures 4 to 12 This is a schematic diagram of the structure corresponding to each step in the capacitor device forming method of the present invention. Detailed Implementation

[0026] It should be noted that the terms "surface" and "on" in this specification are used to describe the relative spatial position and are not limited to whether there is direct contact.

[0027] As described in the background section, the performance of capacitors in the prior art needs improvement. A capacitor will now be described and analyzed in conjunction with this example.

[0028] Figures 1 to 3 This is a schematic diagram of the structure of a capacitor.

[0029] Please refer to Figures 1 to 3 , Figure 1 yes Figure 2 and Figure 3 A top-view structural diagram. Figure 2 yes Figure 1 A schematic diagram of the cross-sectional structure along the EE1 direction. Figure 3 yes Figure 1 A cross-sectional view of the semiconductor structure along the DD1 direction is shown. The semiconductor structure includes: a substrate 100; and several stacked metal layers on the substrate 100. Each metal layer includes a first electrode layer 11 and a second electrode layer 12. The first electrode layer 11 includes a first electrode terminal 110 and several first finger-shaped electrodes 111. The second electrode layer 12 includes a second electrode terminal 120 and several second finger-shaped electrodes 121. The several first finger-shaped electrodes 111 and the several second finger-shaped electrodes 121 are respectively arranged in a first direction X and along a second direction Y. One end of each of the several first finger-shaped electrodes 111 is connected to the first electrode terminal 110. The plurality of second finger-shaped electrode plates 121 are connected together at one end via second electrode terminals 120. The first electrode terminals 110 and the second electrode terminals 120 are located at opposite ends of each of the metal layers. Each first finger-shaped electrode plate 111 is located between two adjacent second finger-shaped electrode plates 111, and the first direction and the second direction are perpendicular to each other. The first electrodes 11 of adjacent metal layers are electrically connected to each other via a plurality of first conductive plugs 112 located at the first electrode terminals 110, and the second electrodes 12 of adjacent metal layers are connected via a plurality of second conductive plugs 122 located at the second electrode terminals 120.

[0030] The above structure illustrates a MOM capacitor composed of five metal layers, where the first electrode layer 11 and the second electrode layer 12 are connected to different terminals. The MOM capacitor includes a C1 capacitance between different electrodes of the same metal layer, a C2 capacitance between different electrodes of adjacent layers, and a C3 capacitance between different electrodes of non-adjacent layers. A certain distance is required between the first electrode layer 11 and the second electrode layer 12 to avoid short circuits. For example, the first finger electrode 111 and the second finger electrode 121 have a certain distance along the Y direction; and along the X direction, the first terminal 110 and the second finger electrode 121 also need to maintain a certain distance. This results in a lower MOM device density, which is detrimental to improving device integration.

[0031] To address the aforementioned problems, this invention provides a capacitor device and its forming method, comprising a plurality of second metal layers stacked with a first metal layer. Each second metal layer includes a plurality of third finger-shaped electrodes, and each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along a first direction. On one hand, the first and second conductive layers are connected to different electrodes, and the first and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent, increasing the capacitance between the first and second conductive layers in the same layer. On the other hand, third conductive plugs electrically connect the first conductive regions in adjacent second metal layers, and fourth conductive plugs electrically connect the second conductive regions in adjacent second metal layers, increasing the capacitance between the third and fourth conductive plugs and improving the device's capacitance. Furthermore, the projections of the first and second conductive regions on the substrate surface of adjacent layers partially overlap, and the capacitance generated between adjacent first and second conductive layers also contributes to the device's capacitance. Therefore, the overall capacitance density of the device is improved.

[0032] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] Figures 4 to 12 This is a schematic diagram of the structure corresponding to each step in the capacitor device forming method of the present invention.

[0034] Please refer to Figure 4 A substrate 200 is provided, the substrate 200 including a base (not shown in the figure), a device layer (not shown in the figure) located on the base, and a dielectric layer (not shown in the figure) located on the surface of the base and the device layer. The device layer includes an isolation structure (not shown in the figure) and a device structure (not shown in the figure) located within the isolation structure.

[0035] In this embodiment, the device structure includes transistors, diodes, triodes, capacitors, inductors, or conductive structures, etc.

[0036] Please refer to Figure 5 A first metal layer is formed on the substrate 200. The first metal layer includes a first electrode layer 21 and a second electrode layer 22. The first electrode layer 21 includes a plurality of first finger-shaped electrode plates 211, and the second electrode layer 22 includes a plurality of second finger-shaped electrode plates 221. The plurality of first finger-shaped electrode plates 211 and the plurality of second finger-shaped electrode plates 221 are all parallel to a first direction X and arranged along a second direction Y. The first direction X and the second direction Y are perpendicular to each other, and each first finger-shaped electrode plate 211 is located between adjacent second finger-shaped electrode plates 221.

[0037] It should be noted that the formation process of the first metal layer and the subsequently formed second metal layers and conductive plugs includes a damask process or a double damask process. The first metal layer, the several second metal layers and the conductive plugs are all formed in the dielectric material layers (not shown in the figure) located on the substrate, with the multilayer dielectric material layers serving as dielectric layers.

[0038] In this embodiment, the first electrode layer 21 further includes a first electrode end 210, and the second electrode layer 22 further includes a second electrode end 220, and the first electrode end 210 and the second electrode end 220 are located at opposite ends of the first metal layer along the first direction X.

[0039] In this embodiment, both the first electrode 210 and the second electrode 220 are parallel to the second direction Y.

[0040] In this embodiment, the plurality of first finger-shaped electrode plates 211 extend to be electrically connected to the first electrode terminal 210, and the plurality of second finger-shaped electrode plates 221 extend to be electrically connected to the second electrode terminal 220.

[0041] Please continue to refer to this. Figure 5 and refer to Figures 6 to 9 , Figure 6 and Figure 7 The diagrams show top views of two adjacent second metal layers (other metal layers are omitted). Figure 8 yes Figure 7 A schematic diagram of the cross-sectional structure along the DD1 direction. Figure 9 yes Figure 7A cross-sectional structural diagram along the EE1 direction shows that a plurality of second metal layers are formed on the first metal layer, stacked with the first metal layer; a first conductive plug 301 and a second conductive plug 302 are located between the plurality of second metal layers and the first metal layer; and a third conductive plug 303 and a fourth conductive plug 304 are located between adjacent second metal layers. Each second metal layer includes a plurality of third finger-shaped electrode plates 401, which are parallel to the first direction X and arranged along the second direction Y. Each third finger-shaped electrode plate 401 is respectively connected to the first finger-shaped electrode plate 2. 11 or the second finger electrode 221 are stacked. Each of the third finger electrode 401 includes a plurality of first conductive regions 401a and second conductive regions 401b spaced apart along the first direction X. An insulating layer (not shown in the figure) is provided between each first conductive region 401a and the second conductive region 401b. The first conductive regions 401a and second conductive regions 401b of two adjacent third finger electrode 401s in the same layer are adjacent. The first conductive regions 401a and second conductive regions 401b of two adjacent layers of third finger electrode 401s are adjacent and the second conductive regions 401b are also adjacent. Along the first direction X, the first conductive regions 401a, second conductive regions 401a, second conductive regions 401b, and third conductive regions 401b are adjacent. The length of 1a is different from the length of the second conductive region 401b. The length of the first conductive region 401a of the third finger electrode is greater than the length of the first conductive region 401a of the adjacent third finger electrode, while the length of the second conductive region 401b is less than the length of the second conductive region 401b of the adjacent third finger electrode. Alternatively, the length of the first conductive region 401a of the third finger electrode is less than the length of the first conductive region 401a of the adjacent third finger electrode, while the length of the second conductive region 401b is greater than the length of the second conductive region 401b of the adjacent third finger electrode. The length of the first conductive region 401a of the two adjacent layers is different from the length of the second conductive region 401b. The projection of 1a on the surface of the substrate 200 and the projection of the second conductive region 401b on the surface of the substrate 200 partially overlap. The first conductive plug 301 electrically connects the first electrode layer 21 to each of the first conductive regions 401a in the adjacent layer. The second conductive plug 302 electrically connects the second electrode layer 22 to each of the second conductive regions 401b in the adjacent layer. The third conductive plug 303 electrically connects the first conductive regions 401a in two adjacent second metal layers. The fourth conductive plug 304 electrically connects the second conductive regions 401b in two adjacent second metal layers.

[0042] Thus, a plurality of second metal layers are formed and stacked with the first metal layer. Each second metal layer includes a plurality of third finger-shaped electrode plates 401. Each third finger-shaped electrode plate 401 includes a plurality of first conductive regions 401a and second conductive regions 401b distributed at intervals along the first direction X. On the one hand, the first conductive layer 401a and the second conductive layer 401b are connected to different electrodes, and the first conductive regions 401a and 401b of two adjacent third finger plates 401 in the same layer are adjacent, increasing the capacitance between the first conductive layers 401a and 401b in the same layer. On the other hand, the third conductive plug 303 electrically connects the first conductive regions 401a in two adjacent second metal layers, and the fourth conductive plug 304 electrically connects the second conductive regions 401b in two adjacent second metal layers. The capacitance generated between the third conductive plug 303 and the fourth conductive plug 304 increases the capacitance of the device. In addition, there is partial overlap between the projections of the first conductive regions 401a and the second conductive regions 401b on the surface of the substrate 200 of two adjacent layers, and the capacitance generated between the two adjacent first conductive layers 401a and 401b also contributes to the capacitance of the device. Therefore, the overall capacitance density of the device is improved.

[0043] In this embodiment, along the first direction X, the distance between adjacent first conductive regions 401a and second conductive regions 401b ranges from 30nm to 1000nm; along the second direction Y, the distance between two adjacent third finger plates 401 ranges from 30nm to 5000nm; and along the second direction Y, the width of each third finger plate 401 ranges from 30nm to 5000nm.

[0044] In this embodiment, each of the second metal layers further includes a third electrode 402 and a fourth electrode 403 located at opposite ends of the second metal layer along the first direction X.

[0045] In this embodiment, both the third electrode 402 and the fourth electrode 403 are parallel to the second direction Y.

[0046] The number of the plurality of second metal layers is greater than or equal to two. In this embodiment, the number of the plurality of second metal layers is two.

[0047] In this embodiment, a third metal layer is formed after the formation of the plurality of second metal layers. Please refer to [reference needed]. Figures 10 to 12 .

[0048] Please refer to Figures 10 to 12 , Figure 10 This is a top view of the third metal layer (the other metal layers are omitted). Figure 11 for Figure 10 A schematic diagram of the cross-sectional structure along the D1D2 direction. Figure 12 for Figure 10 A cross-sectional structural diagram along the EE1 direction shows that after forming the plurality of second metal layers, a third metal layer is formed. The third metal layer includes a third electrode layer 51 and a fourth electrode layer 52. The third electrode layer 51 includes a plurality of fourth finger-shaped electrode plates 511, and the fourth electrode layer 52 includes a plurality of fifth finger-shaped electrode plates 521. The plurality of fourth finger-shaped electrode plates 511 and the plurality of fifth finger-shaped electrode plates 521 are all parallel to the first direction X and arranged along the second direction Y. Each fourth finger-shaped electrode plate 511 is located between two adjacent fifth finger-shaped electrode plates 521. The fourth finger-shaped electrode plates 511 are stacked with the first finger-shaped electrode plate 211, and the fifth finger-shaped electrode plates 521 are stacked with the second finger-shaped electrode plates 221.

[0049] In this embodiment, a fifth conductive plug 305 and a sixth conductive plug 306 are provided between the third metal layer and the plurality of second metal layers. The fifth conductive plug 305 electrically connects the plurality of first conductive regions 401a of the adjacent layer and the third electrode layer 51 to each other, and the sixth conductive plug electrically connects the plurality of second conductive regions 401b of the adjacent layer to the fourth electrode layer 52.

[0050] In this embodiment, the third electrode layer 51 further includes a fifth electrode 510, and the fourth electrode layer 52 further includes a sixth electrode 520, wherein the fifth electrode 510 and the sixth electrode 520 are located at opposite ends of the third metal layer along the first direction X.

[0051] In this embodiment, the plurality of fourth finger-shaped electrode plates 511 extend to be electrically connected to the fifth electrode terminal 510, and the plurality of fifth finger-shaped electrode plates 521 extend to be electrically connected to the sixth electrode terminal 520.

[0052] In this embodiment, both the fifth electrode 510 and the sixth electrode 520 are parallel to the second direction Y.

[0053] Accordingly, embodiments of the present invention also provide a capacitor device formed by the above method; please refer to further details. Figures 5 to 12The system includes: a substrate 200, the substrate 200 comprising a base (not shown in the figure), a device layer (not shown in the figure) located on the base, and a dielectric layer (not shown in the figure) located on the surfaces of the base and the device layer, the device layer comprising an isolation structure (not shown in the figure) and a device structure (not shown in the figure) located within the isolation structure; a first metal layer located on the substrate 200, the first metal layer comprising a first electrode layer 21 and a second electrode layer 22, the first electrode layer 21 comprising a plurality of first finger-shaped electrodes 211, the second electrode layer 22 comprising a plurality of second finger-shaped electrodes 221, the plurality of first finger-shaped electrodes 211 and the ... The second finger-shaped electrode plates 221 are all parallel to the first direction X and arranged along the second direction Y. The first direction X and the second direction Y are perpendicular to each other. Each first finger-shaped electrode plate 211 is located between two adjacent second finger-shaped electrode plates 221. A plurality of second metal layers are stacked on the substrate 200 with the first metal layer. Each second metal layer includes a plurality of third finger-shaped electrode plates 401. The plurality of third finger-shaped electrode plates 401 are parallel to the first direction X and arranged along the second direction Y. Each third finger-shaped electrode plate 401 is stacked with either the first finger-shaped electrode plate 211 or the second finger-shaped electrode plate 221. The finger-shaped electrode 401 includes a plurality of first conductive regions 401a and second conductive regions 401b spaced apart along a first direction X. An insulating layer (not shown in the figure) is provided between each of the first conductive regions 401a and the second conductive regions 401b. The first conductive regions 401 and second conductive regions 402 of two adjacent third finger-shaped electrode 401s in the same layer are adjacent. The first conductive regions 401 of two adjacent layers of third finger-shaped electrode 401s are adjacent, and the second conductive regions 402 are also adjacent. Along the first direction X, the lengths of the first conductive regions 401a and the second conductive regions 401b are different. The first conductive regions of the third finger-shaped electrode... The length of region 401a is greater than the length of the first conductive region 401a of the third finger electrode in the adjacent layer, while the length of the second conductive region 401b is less than the length of the second conductive region 401b of the third finger electrode in the adjacent layer. Alternatively, the length of the first conductive region 401a of the third finger electrode is less than the length of the first conductive region 401a of the third finger electrode in the adjacent layer, while the length of the second conductive region 401b is greater than the length of the second conductive region 401b of the third finger electrode in the adjacent layer. The projections of the first conductive regions 401 and the second conductive regions 402 of the two adjacent layers on the surface of the substrate 200 partially overlap.A conductive plug, comprising a first conductive plug 301, a second conductive plug 302, a third conductive plug 303, and a fourth conductive plug 304, wherein the first conductive plug 301 electrically connects the first electrode layer 21 to each first conductive region 401a of an adjacent layer; the second conductive plug 302 electrically connects the second electrode layer 22 to each second conductive region 401b of an adjacent layer; the third conductive plug 303 electrically connects the first conductive regions 401a of two adjacent second metal layers; and the fourth conductive plug 304 electrically connects the second conductive regions 401b of two adjacent second metal layers. A dielectric layer (not shown) is located on the substrate, wherein the first metal layer, the plurality of second metal layers, and the conductive plug are located within the dielectric layer.

[0054] Thus, a plurality of second metal layers are stacked on the substrate 200 with the first metal layer. Each second metal layer includes a plurality of third finger-shaped electrode plates 401. Each third finger-shaped electrode plate 401 includes a plurality of first conductive regions 401a and second conductive regions 401b distributed at intervals along the first direction X. On the one hand, the first conductive layer 401a and the second conductive layer 401b are connected to different electrodes, and the first conductive regions 401a and 401b of two adjacent third finger plates 401 in the same layer are adjacent, increasing the capacitance between the first conductive layers 401a and 401b in the same layer. On the other hand, the third conductive plug 303 electrically connects the first conductive regions 401a in two adjacent second metal layers, and the fourth conductive plug 304 electrically connects the second conductive regions 401b in two adjacent second metal layers. The capacitance generated between the third conductive plug 303 and the fourth conductive plug 304 increases the capacitance of the device. In addition, there is partial overlap between the projections of the first conductive regions 401a and the second conductive regions 401b on the surface of the substrate 200 of two adjacent layers, and the capacitance generated between the two adjacent first conductive layers 401a and 401b also contributes to the capacitance of the device. Therefore, the overall capacitance density of the device is improved.

[0055] In this embodiment, the capacitor further includes a third metal layer located on the plurality of second metal layers. The third metal layer includes a third electrode layer 51 and a fourth electrode layer 52. The third electrode layer 51 includes a plurality of fourth finger-shaped electrode plates 511, and the fourth electrode layer 52 includes a plurality of fifth finger-shaped electrode plates 521. The plurality of fourth finger-shaped electrode plates 511 and the plurality of fifth finger-shaped electrode plates 521 are all arranged parallel to the first direction X and along the second direction Y. Each fourth finger-shaped electrode plate 511 is located between two adjacent fifth finger-shaped electrode plates 521. The fourth finger-shaped electrode plate 511 is stacked with the first finger-shaped electrode plate 211, and the fifth finger-shaped electrode plate 521 is stacked with the second finger-shaped electrode plate 221.

[0056] In this embodiment, the conductive plug further includes a fifth conductive plug 305 and a sixth conductive plug 306. The fifth conductive plug 305 electrically connects the plurality of first conductive regions 401a and the third electrode layer 51 of the adjacent layer to each other, and the sixth conductive plug 306 electrically connects the plurality of second conductive regions 401b of the adjacent layer to the fourth electrode layer 52.

[0057] In this embodiment, the first electrode layer 21 further includes a first electrode terminal 210, and the second electrode layer 22 further includes a second electrode terminal 220, wherein the first electrode terminal 210 and the second electrode terminal 220 are located at opposite ends of the first metal layer along the first direction X; each of the second metal layers further includes a third electrode terminal 402 and a fourth electrode terminal 403 located at opposite ends of the second metal layer along the first direction X; the third electrode layer 51 further includes a fifth electrode terminal 510, and the fourth electrode layer 52 further includes a sixth electrode terminal 520, wherein the fifth electrode terminal 510 and the sixth electrode terminal 520 are located at opposite ends of the third metal layer along the first direction X.

[0058] In this embodiment, the capacitor includes: a plurality of first finger-shaped plates 211 extending to be electrically connected to the first electrode 210; a plurality of second finger-shaped plates 221 extending to be electrically connected to the second electrode 220; a plurality of fourth finger-shaped plates 511 extending to be electrically connected to the fifth electrode 510; and a plurality of fifth finger-shaped plates 521 extending to be electrically connected to the sixth electrode 520.

[0059] In this embodiment, the first electrode 210, the second electrode 220, the third electrode 402, the fourth electrode 403, the fifth electrode 510, and the sixth electrode 520 are all parallel to the second direction.

[0060] The number of the plurality of second metal layers is greater than or equal to two. In this embodiment, the number of the plurality of second metal layers is two.

[0061] In this embodiment, along the first direction X, the distance between adjacent first conductive regions 401a and second conductive regions 401b ranges from 30nm to 1000nm; along the second direction Y, the distance between two adjacent third finger plates 401 ranges from 30nm to 5000nm; and along the second direction Y, the width of each third finger plate 401 ranges from 30nm to 5000nm.

[0062] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A capacitor component, characterized in that, include: The substrate includes a base, a device layer on the base, and a dielectric layer on the surfaces of the base and the device layer, the device layer including an isolation structure and a device structure within the isolation structure; A first metal layer is located on the substrate. The first metal layer includes a first electrode layer and a second electrode layer. The first electrode layer includes a plurality of first finger-shaped electrodes, and the second electrode layer includes a plurality of second finger-shaped electrodes. The plurality of first finger-shaped electrodes and the plurality of second finger-shaped electrodes are parallel to a first direction and arranged along a second direction. The first direction and the second direction are perpendicular to each other. Each first finger-shaped electrode is located between two adjacent second finger-shaped electrodes. A plurality of second metal layers are stacked on the substrate and superimposed on the first metal layer. Each second metal layer includes a plurality of third finger-shaped electrodes. The plurality of third finger-shaped electrodes are parallel to the first direction and arranged along the second direction. Each third finger-shaped electrode is stacked with either the first finger-shaped electrode or the second finger-shaped electrode. Each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along the first direction. An insulating layer is provided between each first conductive region and each second conductive region. The first conductive regions and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent. The first conductive regions and second conductive regions of three third finger-shaped electrodes in two adjacent layers are adjacent and the second conductive regions are also adjacent. The conductive regions are also adjacent. Along the first direction, the lengths of the first conductive region and the second conductive region are different. The length of the first conductive region of the third finger electrode is greater than the length of the first conductive region of the third finger electrode of the adjacent layer, while the length of the second conductive region is less than the length of the second conductive region of the third finger electrode of the adjacent layer. Alternatively, the length of the first conductive region of the third finger electrode is less than the length of the first conductive region of the third finger electrode of the adjacent layer, while the length of the second conductive region is greater than the length of the second conductive region of the third finger electrode of the adjacent layer. The projections of the first conductive regions of the two adjacent layers on the substrate surface and the projections of the second conductive regions on the substrate surface partially overlap. A conductive plug, comprising a first conductive plug, a second conductive plug, a third conductive plug, and a fourth conductive plug, wherein the first conductive plug electrically connects the first electrode layer to each first conductive region of the adjacent layer, the second conductive plug electrically connects the second electrode layer to each second conductive region of the adjacent layer, the third conductive plug electrically connects the first conductive regions in two adjacent second metal layers, and the fourth conductive plug electrically connects the second conductive regions in two adjacent second metal layers. A dielectric layer is located on the substrate, wherein the first metal layer, the plurality of second metal layers, and the conductive plug are located in the dielectric layer.

2. The capacitor as described in claim 1, characterized in that, Also includes: A third metal layer is located on the plurality of second metal layers. The third metal layer includes a third electrode layer and a fourth electrode layer. The third electrode layer includes a plurality of fourth finger-shaped electrodes. The fourth electrode layer includes a plurality of fifth finger-shaped electrodes. The plurality of fourth finger-shaped electrodes and the plurality of fifth finger-shaped electrodes are parallel to a first direction and arranged along a second direction. Each fourth finger-shaped electrode is located between two adjacent fifth finger-shaped electrodes. The fourth finger-shaped electrodes are stacked with the first finger-shaped electrodes, and the fifth finger-shaped electrodes are stacked with the second finger-shaped electrodes.

3. The capacitor as described in claim 2, characterized in that, The conductive plug further includes a fifth conductive plug and a sixth conductive plug. The fifth conductive plug electrically connects the plurality of first conductive regions of the adjacent layer and the third electrode layer to each other, and the sixth conductive plug electrically connects the plurality of second conductive regions of the adjacent layer and the fourth electrode layer to each other.

4. The capacitor as described in claim 2, characterized in that, The first electrode layer further includes a first electrode terminal, and the second electrode layer further includes a second electrode terminal, wherein the first electrode terminal and the second electrode terminal are located at opposite ends of the first metal layer along the first direction; each second metal layer further includes a third electrode terminal and a fourth electrode terminal located at opposite ends of the second metal layer along the first direction; the third electrode layer further includes a fifth electrode terminal, and the fourth electrode layer further includes a sixth electrode terminal, wherein the fifth electrode terminal and the sixth electrode terminal are located at opposite ends of the third metal layer along the first direction.

5. The capacitor as described in claim 4, characterized in that, include: The plurality of first finger-shaped electrode plates extend to be electrically connected to the first electrode terminal, the plurality of second finger-shaped electrode plates extend to be electrically connected to the second electrode terminal, the plurality of fourth finger-shaped electrode plates extend to be electrically connected to the fifth electrode terminal, and the plurality of fifth finger-shaped electrode plates extend to be electrically connected to the sixth electrode terminal.

6. The capacitor as claimed in claim 4, characterized in that, The first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are all parallel to the second direction.

7. The capacitor as claimed in claim 1, characterized in that, The number of the plurality of second metal layers is greater than or equal to two.

8. The capacitor as claimed in claim 1, characterized in that, Along the first direction, the distance between adjacent first conductive regions and second conductive regions ranges from 30 nm to 1000 nm; along the second direction, the distance between two adjacent third finger plates ranges from 30 nm to 5000 nm; along the second direction, the width of each third finger plate ranges from 30 nm to 5000 nm.

9. A method for forming a capacitor element, characterized in that, include: Provide substrate; A first metal layer is formed on the substrate. The first metal layer includes a first electrode layer and a second electrode layer. The first electrode layer includes a plurality of first finger-shaped electrodes, and the second electrode layer includes a plurality of second finger-shaped electrodes. The plurality of first finger-shaped electrodes and the plurality of second finger-shaped electrodes are parallel to a first direction and arranged along a second direction. The first direction and the second direction are perpendicular to each other. Each first finger-shaped electrode is located between two adjacent second finger-shaped electrodes. A plurality of second metal layers are formed on the first metal layer, stacked with the first metal layer; a first conductive plug and a second conductive plug are located between the plurality of second metal layers and the first metal layer; and a third conductive plug and a fourth conductive plug are formed between adjacent second metal layers. Each second metal layer includes a plurality of third finger-shaped electrodes, which are parallel to the first direction and arranged along the second direction. Each third finger-shaped electrode is stacked with either the first finger-shaped electrode or the second finger-shaped electrode. Each third finger-shaped electrode includes a plurality of first conductive regions and second conductive regions spaced apart along the first direction. An insulating layer is provided between each first conductive region and each second conductive region. The first conductive regions and second conductive regions of two adjacent third finger-shaped electrodes in the same layer are adjacent. The first conductive regions and second conductive regions of two adjacent layers of third finger-shaped electrodes are adjacent. The projections of the first conductive regions of two adjacent layers onto the substrate surface are parallel to the projections of the second conductive regions. The electrical regions partially overlap in projection onto the substrate surface. Along the first direction, the lengths of the first conductive region and the second conductive region are different. The length of the first conductive region of the third finger electrode is greater than the length of the first conductive region of the third finger electrode in the adjacent layer, while the length of the second conductive region is less than the length of the second conductive region of the third finger electrode in the adjacent layer. Alternatively, the length of the first conductive region of the third finger electrode is less than the length of the first conductive region of the third finger electrode in the adjacent layer, while the length of the second conductive region is greater than the length of the second conductive region of the third finger electrode in the adjacent layer. The first conductive plug electrically connects the first electrode layer to each first conductive region of the adjacent layer. The second conductive plug electrically connects the second electrode layer to each second conductive region of the adjacent layer. The third conductive plug electrically connects the first conductive regions in two adjacent second metal layers. The fourth conductive plug electrically connects the second conductive regions in two adjacent second metal layers.

10. The method for forming a capacitor element as described in claim 9, characterized in that, After forming the plurality of second metal layers, a third metal layer is formed, the third metal layer including a third electrode layer and a fourth electrode layer, the third electrode layer including a plurality of fourth finger-shaped electrode plates, the fourth electrode layer including a plurality of fifth finger-shaped electrode plates, the plurality of fourth finger-shaped electrode plates and the plurality of fifth finger-shaped electrode plates being parallel to a first direction and arranged along a second direction, each of the fourth finger-shaped electrode plates being located between two adjacent fifth finger-shaped electrode plates, the fourth finger-shaped electrode plates being stacked with the first finger-shaped electrode plates, and the fifth finger-shaped electrode plates being stacked with the second finger-shaped electrode plates.

11. The method for forming a capacitor element as claimed in claim 10, characterized in that, A fifth conductive plug and a sixth conductive plug are provided between the third metal layer and the plurality of second metal layers. The fifth conductive plug electrically connects the plurality of first conductive regions of the adjacent layer and the third electrode layer to each other, and the sixth conductive plug electrically connects the plurality of second conductive regions of the adjacent layer and the fourth electrode layer to each other.

12. The method for forming a capacitor element as claimed in claim 10, characterized in that, The first electrode layer further includes a first electrode terminal, and the second electrode layer further includes a second electrode terminal, wherein the first electrode terminal and the second electrode terminal are located at opposite ends of the first metal layer along the first direction; each second metal layer further includes a third electrode terminal and a fourth electrode terminal located at opposite ends of the second metal layer along the first direction; the third electrode layer further includes a fifth electrode terminal, and the fourth electrode layer further includes a sixth electrode terminal, wherein the fifth electrode terminal and the sixth electrode terminal are located at opposite ends of the third metal layer along the first direction.

13. The method for forming a capacitor element as described in claim 12, characterized in that, include: The plurality of first finger-shaped electrode plates extend to be electrically connected to the first electrode terminal, the plurality of second finger-shaped electrode plates extend to be electrically connected to the second electrode terminal, the plurality of fourth finger-shaped electrode plates extend to be electrically connected to the fifth electrode terminal, and the plurality of fifth finger-shaped electrode plates extend to be electrically connected to the sixth electrode terminal.

14. The method for forming a capacitor element as claimed in claim 12, characterized in that, The first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are all parallel to the second direction.

15. The method for forming a capacitor element as described in claim 9, characterized in that, The number of the plurality of second metal layers is greater than or equal to two.

16. The method for forming a capacitor element as described in claim 9, characterized in that, Along the first direction, the distance between adjacent first conductive regions and second conductive regions ranges from 30 nm to 1000 nm; along the second direction, the distance between two adjacent third finger plates ranges from 30 nm to 5000 nm; along the second direction, the width of each third finger plate ranges from 30 nm to 5000 nm.

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