A high-transconductance ionic gel-based all-solid-state organic electrochemical transistor and a method for preparing the same

Abstract

This invention discloses a high transconductance ion-gel-based all-solid-state organic electrochemical transistor and its fabrication method. Belonging to the field of organic electrochemical transistors, the ion-gel-based organic electrochemical transistor comprises, from bottom to top, an insulating substrate, electrodes, a polymer semiconductor, and an ion gel. The electrodes include a source electrode, a drain electrode, and a side gate electrode. The polymer semiconductor is disposed above the channel formed by the source and drain electrodes and contacts the substrate layer. The ion gel layer contacts the upper surface of the channel and extends to the upper surface of the side gate electrode. The ion gel layer is made of a polymer matrix and an ionic liquid. This invention uses a doped polymer semiconductor to cover the metal electrode as the side gate electrode, which, compared to a conventional single metal electrode, increases the gate's modulation capability of the channel conductance, increases the device's transconductance, and significantly reduces the device's operating voltage.

Description

Technical Field

[0001] This invention belongs to the field of organic electrochemical transistor technology, specifically relating to a high transconductance ion gel-based all-solid-state organic electrochemical transistor and its preparation method. Background Technology

[0002] Organic field-effect transistors (OFETs) utilize the polarization of the dielectric under a gate voltage, which induces the appearance of charge carriers on the semiconductor surface, leading to a change in conductance. In contrast, organic electrochemical transistors (OECTs) use a gate electric field to drive ions in the electrolyte to embed into the organic semiconductor, inducing the appearance of charge carriers and achieving a change in conductance. Therefore, compared to OFETs where charge carriers exist only at the interface between the semiconductor and the dielectric, OECTs achieve doping throughout the entire semiconductor layer. Consequently, OECT devices exhibit higher current amplification (i.e., transconductance) and lower operating voltage compared to OFETs.

[0003] There are already related studies. For example, Chinese patent application number CN202210168448.9 discloses an all-solid-state organic electrochemical transistor and its fabrication method. The all-solid-state organic electrochemical transistor includes, from bottom to top, a flexible substrate layer, an electrode layer, and an ion gel electrolyte layer. The electrodes include a source electrode, a drain electrode, and a gate electrode. A multilayer porous semiconductor layer is disposed above the source electrode and the drain electrode, and an ion gel electrolyte layer is disposed above the gate electrode. By dropping an ion gel electrolyte layer, which is a mixture of polymer and ionic liquid in a certain proportion, onto the multilayer porous semiconductor layer, it is possible to increase the electrolyte ion injection rate and optimize the transconductance of the device while ensuring a large contact area between the semiconductor active layer and the ion gel electrolyte layer.

[0004] Existing OECTs have some shortcomings. Conventional OECTs use ionic solutions as electrolytes, which poses significant challenges to device fabrication and packaging. Furthermore, the ion concentration fluctuations caused by solution volatilization have a substantial impact on device performance. Ion gels are a type of polymer network swollen with ionic liquids. Due to the advantages of ionic liquids, such as zero volatility at room temperature, high thermal stability, wide electrochemical window, and excellent ionic conductivity, they can achieve effective and stable electrochemical doping as the electrolyte layer of organic electrochemical transistors.

[0005] However, the widely studied organic electrochemical transistors are based on gate electrodes made of a single metal material. Due to the redox reaction at the electrode, i.e., the polarization of the electrode, the gate voltage that actually acts on the electrolyte for ion migration decreases, resulting in a decrease in gate modulation capability, i.e., a decrease in device transconductance performance. Higher gate voltage is required for operation, which also increases energy consumption. Summary of the Invention

[0006] To address the issue that polarization of existing electrodes leads to a decrease in the gate voltage that actually acts on the electrolyte for ion migration, resulting in a reduction in gate modulation capability, i.e., a decrease in device transconductance, requiring a higher gate voltage for operation, and also increasing energy consumption, this invention provides a high transconductance ion gel-based all-solid-state organic electrochemical transistor and its fabrication method. This invention uses a doped polymer semiconductor to cover the metal electrode as a side gate electrode, which, compared to a conventional single metal electrode, increases the gate's modulation capability for channel conductance, increases the device transconductance, and significantly reduces the device's operating voltage.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] A high transconductance ion gel-based all-solid-state organic electrochemical transistor, comprising, from bottom to top, an insulating substrate, an electrode, a polymer semiconductor, and an ion gel;

[0009] The electrode comprises a source electrode, a drain electrode, and a side gate electrode composed of a doped polymer semiconductor covering a metal electrode; the doped polymer semiconductor is obtained by sequentially doping a polymer semiconductor spin-coated above the metal electrode with a dopant solution;

[0010] The polymer semiconductor is disposed above the channel formed by the source and drain and is in contact with the insulating substrate;

[0011] The ion gel is in contact with the upper surface of the channel and extends to the upper surface of the side gate electrode; the ion gel is made of a polymer matrix and an ionic liquid.

[0012] Furthermore, the insulating substrate is made of a material selected from glass, silicon dioxide, polyethylene terephthalate, or polyimide.

[0013] Furthermore, the source electrode, drain electrode, and metal electrode are made of one or more of gold, platinum, silver, aluminum, and chromium.

[0014] Furthermore, the polymer semiconductor is selected from polytrihexylthiophene (P3HT) or poly2,5-bis(3-tetradecylthiophene-2-yl)thiophene[3,2-bthiophene] (PBTTT), and the thickness of the thin film formed by the polymer semiconductor ranges from 50 to 300 nm.

[0015] Furthermore, the ion gel comprises an ionic liquid and a polymer matrix, and the thickness of the film formed by the ion gel is 100-2000 μm.

[0016] Furthermore, the ionic liquid is selected from one of 1-ethyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, 1-butyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, lithium bis(trifluoromethanesulfonyl)imide, diethylmethyl-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide, and 1-butyl-1-methylpyrrolidine bis(trifluoromethanesulfonyl)imide.

[0017] Furthermore, the polymer matrix is ​​selected from one of poly(vinylidene fluoride-co-hexafluoropropylene), poly(styrene-b-methyl methacrylate-b-styrene), polyethylene oxide, and polyacrylonitrile.

[0018] Furthermore, the dopant solution is composed of dopant molecules and solvent, with a mass ratio of dopant molecules to solvent of 0.1-5 wt%; the dopant molecules are selected from one of F6TCNNQ, F4TCNQ, F2TCNQ, and FeCl3; the solvent is selected from one of acetonitrile, 1-ethyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, 1-butyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, lithium bis(trifluoromethanesulfonyl)imide, diethylmethyl-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide, and 1-butyl-1-methylpyrrolidine bis(trifluoromethanesulfonyl)imide.

[0019] The high transconductance ion-gel-based all-solid-state organic electrochemical transistor of this invention achieves a very high current value at a gate voltage of -1V, thus significantly reducing the device's operating voltage. Furthermore, by differentiating the transfer curve to calculate the transconductance, the optimized transconductance reaches 13mS, higher than the 5.3mS of metal-gate electrode devices. The device's PBTTT on-state current reaches 10... -2 A, Off state is less than 10 -5 A. The device turns on at 0V and has excellent operating performance.

[0020] This invention also relates to a method for preparing the above-mentioned high transconductance ion gel-based all-solid-state organic electrochemical transistor, comprising the following steps:

[0021] S1. Prepare a clean insulating substrate:

[0022] S2. A metal gate electrode is deposited on one side of the upper surface of the insulating substrate obtained in the previous step, and a source and drain electrode with a channel is deposited on the other side.

[0023] S3. Spin-coat a polymer semiconductor solution onto the channel regions of the source and drain electrodes and the metal side gate electrode obtained in the previous step to prepare a polymer semiconductor.

[0024] S4. The dopant solution is dropped onto the polymer semiconductor at the side gate electrode to dop it, and the excess dopant solution is removed to obtain the side gate of the doped polymer semiconductor.

[0025] S5. The thin film formed by ion gel is transferred to the upper surface region of the channel of the source and drain electrodes and connected to the side gate electrode to obtain a high transconductance ion gel-based all-solid-state organic electrochemical transistor.

[0026] The raw materials for preparing the ion gel film include an ionic liquid, a polymer matrix, and a solvent, wherein the mass ratio of the ionic liquid, solvent, and polymer matrix is ​​(3-5):(0.5-2):(6-10); the solvent is one of acetone, N,N-dimethylformamide, ethyl acetate, ethylene carbonate, and propylene carbonate.

[0027] The preparation steps of the thin film formed by the ion gel include:

[0028] The ionic liquid, solvent, and polymer matrix are mixed and heated at 50-80℃ for 1-4 hours to obtain a mixed solution. The mixed solution is then spin-coated onto a glass slide at a spin speed of 300-800 rpm for 30-60 seconds to obtain an electrolyte film. The electrolyte film is then heated in a vacuum oven at 60-80℃ for 12-24 hours and cut into strips that can cover the channel region and the side gate electrode.

[0029] Furthermore, the method for preparing a clean insulating substrate in step S1 is as follows: the insulating substrate is ultrasonically cleaned with a mixture of one or more of deionized water, acetone, isopropanol and ethanol (in any proportion), then purged with nitrogen, dried, and treated with ultraviolet ozone to obtain a clean insulating substrate.

[0030] Furthermore, in step S3, the polymer semiconductor solution uses a solvent selected from toluene, chlorobenzene, o-dichlorobenzene, p-dichlorobenzene, and chloroform; the concentration of the polymer semiconductor solution is 0.5-20 mg·mL. -1 ;

[0031] The preparation steps of the polymer semiconductor include: mixing polytrihexylthiophene (P3HT) or poly2,5-bis(3-tetradecylthiophene-2-yl)thiophene[3,2-bthiophene] (PBTTT) with a solvent, heating at 70-100℃ for 1-4 hours to obtain a mixed solution; and spin-coating the mixed solution onto a predetermined position at a rotation speed of 1000-5000 rpm for 30-70 seconds to obtain the polymer semiconductor.

[0032] Further, step S4 specifically involves: dropping a dopant solution onto the polymer semiconductor region on the gate metal electrode, with a dropping amount of 1-5 μL, a doping time of 10-600 s, and a doping temperature of 50-70 °C; then using a cotton swab to remove the excess dopant solution to obtain a side gate of the doped polymer semiconductor material.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] 1. The high transconductance ion gel-based all-solid-state organic electrochemical transistor of the present invention uses a doped polymer semiconductor covering the metal electrode as a side gate electrode. Compared with the use of traditional metal as the gate electrode, the doped polymer semiconductor as the gate electrode greatly increases the transconductance performance of the device. Compared with the conventional single metal electrode, it increases the modulation capability of the gate on the channel conductance, increases the transconductance of the device, and reduces the gate voltage required to achieve the same current. This significantly reduces the operating voltage of the device, not only reducing the power consumption of the device, but also having a more sensitive effect in related sensing applications.

[0035] 2. The high transconductance ion gel-based all-solid-state organic electrochemical transistor of the present invention has the unique advantages of large on-state current, small off-state current, and low threshold voltage and operating voltage. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the structure of the high transconductance ion gel-based all-solid-state organic electrochemical transistor obtained in Example 1 of the present invention (wherein: 1, insulating substrate; 2, metal electrode; 3, side gate electrode of polymer semiconductor doped with polymer semiconductor; 4, ion gel; 5, source electrode; 6, drain electrode; 7, polymer semiconductor).

[0037] Figure 2 The diagram shows the structure of the all-solid-state organic electrochemical transistor obtained in Comparative Example 1 of this invention (wherein: 1, insulating substrate; 2, metal side gate electrode; 3, ion gel; 4, source electrode; 5, drain electrode; 6, polymer semiconductor).

[0038] Figure 3 This is a typical transfer curve of the high transconductance ion-gel-based all-solid-state organic electrochemical transistor obtained in Example 1 of the present invention;

[0039] Figure 4 This is a typical transfer curve of the all-solid-state organic electrochemical transistor obtained in Comparative Example 1 of the present invention;

[0040] Figure 5 This is a typical transfer curve of the high transconductance ion-gel-based all-solid-state organic electrochemical transistor obtained in Example 2 of the present invention;

[0041] Figure 6This is a typical transfer curve of the all-solid-state organic electrochemical transistor obtained in Comparative Example 2 of the present invention;

[0042] Figure 7 This is a typical transfer curve of the high transconductance ion gel-based all-solid-state organic electrochemical transistor after optimizing the test conditions in Example 1 of the present invention. Detailed Implementation

[0043] The invention will be more fully understood through the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the invention are disclosed herein; however, it should be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, the specific functional details disclosed herein should not be construed as limiting, but rather as the basis for the claims and as intended to teach those skilled in the art to employ the representative basis of the invention in different ways in any suitable detailed embodiment.

[0044] The present invention will be further described in detail below through embodiments, but these embodiments should not be considered as limiting the present invention.

[0045] Example 1:

[0046] A high transconductance ion gel-based all-solid-state organic electrochemical transistor is a type of artificial synapse based on an electrolyte gate transistor, and its structure is as follows: Figure 1 As shown, it includes an insulating substrate, source / drain electrodes, side gate electrodes, and a solid electrolyte film; the source / drain metal electrodes and the side gate metal electrodes are respectively disposed at different positions on the upper surface of the insulating substrate; the source / drain electrodes have channels, and a polymer semiconductor film is disposed on the upper surface of the channel and the upper surface of the side gate metal electrode within the channel range; the polymer semiconductor on the upper surface of the side gate metal electrode is doped with a dopant solution; the solid electrolyte film is disposed on the surface of the polymer semiconductor film and extends to the upper surface of the doped polymer semiconductor side gate electrode.

[0047] A method for fabricating a high transconductance ion-gel-based all-solid-state organic electrochemical transistor includes the following steps:

[0048] 1) Substrate cleaning: A 1cm×1cm SiO2 / Si wafer is cut using a silicon knife as the substrate. The cut substrate is placed in a cleaning rack and then ultrasonically cleaned with ultrapure water, acetone and isopropanol for 2 minutes in sequence to remove solid impurities, soluble contaminants and residual organic solvents on the substrate surface. Then, the isopropanol on the substrate surface is dried with a nitrogen jet gun. The substrate is then placed in a UV-ozone cleaner for 15 minutes to further remove residual organic matter and soluble ions on the surface and improve the wettability of the substrate surface. The above cleaning process can thoroughly clean the substrate and prevent residual impurities on the substrate from affecting the subsequent film growth. Finally, the clean substrate is transferred to an ultra-clean glove box for later use.

[0049] 2) Electrode fabrication: Cr / Au source / drain electrodes and side gate electrodes (thickness of 5 / 50nm) are deposited on the clean SiO2 / Si substrate by thermal evaporation, wherein the channel spacing between the source / drain electrodes is 100μm and the length is 2000μm.

[0050] 3) Preparation of polymer semiconductor solution: Weigh 20 mg of poly(2,5-bis(3-tetradecylthiophen-2-yl)thiophene[3,2-bthiophene](PBTTT-C14) powder on an analytical balance and place it in a reagent bottle. Add 1 ml of o-dichlorobenzene solvent to the bottle, then add a magnetic stir bar to the bottle and place the reagent bottle on a magnetic stirrer to stir thoroughly to promote the dissolution of PBTTT-C14 at 90℃.

[0051] 4) Spin coating of polymer semiconductor solution: The above-mentioned SiO2 / Si substrate with electrodes is adsorbed onto the suction cup of the spin coater. 40 μL of PBTTT-C14 solution is pipetted onto the surface of the source and drain electrode area on the substrate. Then, the substrate is accelerated from 500 rpm / s to 1500 rpm at the set rotation speed and held for 60 seconds to complete the process. After obtaining the PBTTT-C14 polymer semiconductor film, the polymer semiconductor outside the source and drain electrode channel area and the side gate metal electrode is wiped off with a cotton swab.

[0052] 5) Preparation of dopant solution: Weigh 6 mg of F4TCNQ and 1 g of [EMIM][TFSI] on an analytical balance and place them in a reagent bottle. Then add a magnetic stir bar to the bottle and place the reagent bottle on a magnetic stirrer to stir thoroughly to promote dissolution.

[0053] 6) Doping of the gate polymer semiconductor: Use a pipette to add 2 μL of dopant solution to the polymer semiconductor at the gate, maintain the temperature at 60°C for 10 minutes, and remove any excess dopant solution with a cotton swab.

[0054] 7) Preparation of electrolyte solution: Weigh 1g of PVDF-HFP, 4g of [EMIM][TFSI] and 8g of acetone on an analytical balance and place them in a reagent bottle. Then add a magnetic stir bar to the bottle and place the reagent bottle on a magnetic stirrer to stir thoroughly to promote dissolution at 70℃.

[0055] 8) Electrolyte film preparation: A clean insulating substrate is adsorbed onto the suction cup of a spin coater. 200 μL of electrolyte solution is added to the substrate surface using a pipette. Then, the substrate is accelerated at 500 rpm / s to 800 rpm and held for 30 seconds to complete the process, thus obtaining a wet electrolyte film. The wet electrolyte film is then placed in a vacuum oven at 70°C for 12 hours to obtain the electrolyte film.

[0056] 9) Fabrication of all-solid-state organic transistor devices: The electrolyte film described above is cut into elongated strips that can cover the source / drain electrode channel region and the side gate electrode, and then transferred to a polymer semiconductor film covering the side gate electrode to obtain an all-solid-state organic transistor device (the structure of the obtained product is shown in Figure 1). Figure 1 (As shown).

[0057] Figure 1 This is a schematic diagram of the structure of the high transconductance ion gel-based all-solid-state organic electrochemical transistor obtained in Example 1 (wherein: 1, insulating substrate; 2, metal electrode; 3, side gate electrode of doped polymer semiconductor; 4, ion gel; 5, source electrode; 6, drain electrode; 7, polymer semiconductor).

[0058] Example 2:

[0059] The difference from Example 1 is that the PBTTT polymer semiconductor material is replaced with P3HT and the dopant F4TCNQ is replaced with FeCl3, while the rest are the same as in Example 1.

[0060] Comparative Example 1:

[0061] The difference from Example 1 is that the polymer semiconductor outside the source and drain electrode channel area is completely wiped away with a cotton swab, and there is no polymer semiconductor on the upper surface of the side gate electrode. Only a metal electrode is used as the side gate electrode. Everything else is the same as Example 1.

[0062] Figure 2 The diagram shows the structure of the all-solid-state organic electrochemical transistor obtained in Comparative Example 1 (where: 1, insulating substrate; 2, metal side gate electrode; 3, ion gel; 4, source electrode; 5, drain electrode; 6, polymer semiconductor).

[0063] Comparative Example 2:

[0064] The difference from Example 2 is that the polymer semiconductor outside the source and drain electrode channel area is completely wiped away with a cotton swab, and there is no polymer semiconductor on the upper surface of the side gate electrode. Only a metal electrode is used as the side gate electrode. Everything else is the same as Example 2.

[0065] Results and Discussion:

[0066] In Comparative Examples 1-2, both PBTTT and P3HT semiconductor materials, when using metal as the gate electrode, require a gate voltage of over 4V to achieve maximum current. However, in Examples 1-2, when using doped polymer semiconductors as the gate electrode, a very high current value is achieved at around -1V, thus significantly reducing the device's operating voltage. Furthermore, the transconductance of the device can be calculated by differentiating the transfer curve. Figure 7The optimized device achieves a transconductance of 13 mS, significantly higher than the 5.3 mS of the metal gate electrode device, and the device's PBTTT on-state current reaches 10. -2 A, Off state is less than 10 -5 A. The device turns on at around 0V and has excellent operating performance.

[0067] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention, or modify them into equivalent embodiments, without departing from the spirit and technical essence of the present invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention, without departing from the content of the technical solutions of the present invention, shall still fall within the scope of protection of the technical solutions of the present invention.

Claims

1. A high transconductance ion-gel-based all-solid-state organic electrochemical transistor, characterized in that: From bottom to top, it includes an insulating substrate, electrodes, a polymer semiconductor, and an ion gel; The electrode comprises a source electrode, a drain electrode, and a side gate electrode composed of a doped polymer semiconductor covering a metal electrode; the doped polymer semiconductor is obtained by sequentially doping a polymer semiconductor spin-coated above the metal electrode with a dopant solution; The polymer semiconductor is disposed above the channel formed by the source and drain and is in contact with the insulating substrate; The ion gel is in contact with the upper surface of the channel and extends to the upper surface of the side gate electrode; the ion gel is made of a polymer matrix and an ionic liquid. The insulating substrate is made of a material selected from glass, silica, polyethylene terephthalate, or polyimide. The source electrode, drain electrode, and metal electrode are made of one or more of gold, platinum, silver, aluminum, and chromium. The polymer semiconductor is selected from polytrihexylthiophene or poly2,5-bis(3-tetradecylthiophene-2-yl)thiophene[3,2-bthiophene], and the thickness of the thin film formed by the polymer semiconductor is in the range of 50-300 nm; The ion gel comprises an ionic liquid and a polymer matrix, and the thickness of the film formed by the ion gel is 100-2000 μm. The ionic liquid is selected from one of 1-ethyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, 1-butyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, lithium bis(trifluoromethanesulfonyl)imide, diethylmethyl-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide, and 1-butyl-1-methylpyrrolidine bis(trifluoromethanesulfonyl)imide; The polymer matrix is ​​selected from one of poly(vinylidene fluoride-co-hexafluoropropylene), poly(styrene-b-methyl methacrylate-b-styrene), polyethylene oxide, and polyacrylonitrile; The dopant solution is composed of dopant molecules and solvent, with a mass ratio of dopant molecules to solvent of 0.1-5 wt%. The dopant molecules are selected from one of F6TCNNQ, F4TCNQ, F2TCNQ, and FeCl3. The solvent is selected from one of acetonitrile, 1-ethyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, 1-butyl-3-methylimidazoline bis(trifluoromethanesulfonyl)imide, lithium bis(trifluoromethanesulfonyl)imide, diethylmethyl-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide, and 1-butyl-1-methylpyrrolidine bis(trifluoromethanesulfonyl)imide.

2. The method for preparing a high transconductance ion-gel-based all-solid-state organic electrochemical transistor according to claim 1, characterized in that: Includes the following steps: S1. Prepare a clean insulating substrate: S2. A metal gate electrode is deposited on one side of the upper surface of the insulating substrate obtained in the previous step, and a source and drain electrode with a channel is deposited on the other side. S3. Spin-coat a polymer semiconductor solution onto the channel regions of the source and drain electrodes and the metal side gate electrode obtained in the previous step to prepare a polymer semiconductor. S4. The dopant solution is dropped onto the polymer semiconductor at the side gate electrode to dop it, and the excess dopant solution is removed to obtain the side gate of the doped polymer semiconductor. S5. The thin film formed by ion gel is transferred to the upper surface region of the channel of the source and drain electrodes and connected to the side gate electrode to obtain a high transconductance ion gel-based all-solid-state organic electrochemical transistor. The raw materials for preparing the ion gel film include an ionic liquid, a polymer matrix, and a solvent, wherein the mass ratio of the ionic liquid, solvent, and polymer matrix is ​​(3-5):(0.5-2):(6-10); the solvent is one of acetone, N,N-dimethylformamide, ethyl acetate, ethylene carbonate, and propylene carbonate. The preparation steps of the thin film formed by the ion gel include: The ionic liquid, solvent and polymer matrix are mixed and heated at 50-80℃ for 1-4 hours to obtain a mixed solution; The mixed solution is spin-coated onto a glass slide at a speed of 300-800 rpm for 30-60 seconds to obtain an electrolyte film. The electrolyte film is then heated in a vacuum oven at 60-80°C for 12-24 hours and cut into strips that can cover the channel region and the side gate electrode.

3. The method for preparing a high transconductance ion gel-based all-solid-state organic electrochemical transistor according to claim 2, characterized in that: The method for preparing a clean insulating substrate in step S1 is as follows: the insulating substrate is ultrasonically cleaned with a mixture of one or more of deionized water, acetone, isopropanol and ethanol in any proportion, then purged with nitrogen, dried, and treated with ultraviolet ozone to obtain a clean insulating substrate.

4. The method for preparing a high transconductance ion gel-based all-solid-state organic electrochemical transistor according to claim 2, characterized in that: The polymer semiconductor solution described in step S3 uses one of toluene, chlorobenzene, o-dichlorobenzene, p-dichlorobenzene, and chloroform as the solvent; the concentration of the polymer semiconductor solution is 0.5-20 mg·mL. -1 .

5. The method for preparing a high transconductance ion-gel-based all-solid-state organic electrochemical transistor according to claim 2, characterized in that: The preparation steps of the polymer semiconductor include: mixing polytrihexylthiophene or poly2,5-bis(3-tetradecylthiophene-2-yl)thiophene[3,2-bthiophene] with a solvent and heating at 70-100°C for 1-4 hours to obtain a mixed solution; spin-coating the mixed solution onto a predetermined position at a rotation speed of 1000-5000 rpm for 30-70 seconds to obtain the polymer semiconductor.

6. The method for preparing a high transconductance ion-gel-based all-solid-state organic electrochemical transistor according to claim 2, characterized in that: Step S4 involves dropping a dopant solution onto the polymer semiconductor region on the gate metal electrode. The amount of solution dropped is 1-5 μL. The doping time is 10-600 s and the doping temperature is 50-70℃. Then, the excess dopant solution is removed with a cotton swab to obtain the side gate of the doped polymer semiconductor material.

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