Semiconductor structure processing methods, processing devices and processing systems

By detecting and etching away the locations of photoresist layer protrusions, the problems of equipment contamination and high maintenance costs caused by protrusions in the photolithography process are solved, thereby improving the product yield of DRAM manufacturing processes.

CN117497435BActive Publication Date: 2026-05-26CHANGXIN MEMORY TECH INC

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHANGXIN MEMORY TECH INC
Filing Date
2022-07-21
Publication Date
2026-05-26

Smart Images

  • Figure CN117497435B_ABST
    Figure CN117497435B_ABST
Patent Text Reader

Abstract

This disclosure relates to the field of semiconductor technology, specifically a method, apparatus, and system for processing semiconductor structures. The processing method includes providing a semiconductor substrate; forming a photoresist layer on the semiconductor substrate, the photoresist layer including adjacent edge regions and a central region, the edge regions including protrusions; detecting the position information of the protrusions and determining a target etching region based on the position information, the protrusions being located within the target etching region; and etching the photoresist layer located within the target etching region. This processing method can reduce equipment maintenance costs and improve product yield.
Need to check novelty before this filing date? Find Prior Art