Capacitive structure
By designing the capacitor structure into multiple substructures and electrically connecting them with connecting metal segments, the problem of decreased capacitance and Q value of the capacitor was solved, thereby achieving an increase in capacitance and Q value and an increase in device density.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Filing Date
- 2022-07-22
- Publication Date
- 2026-06-23
AI Technical Summary
As technology advances, the capacitance and Q value of metal-oxide-metal capacitors decrease, and the large differences in signal channel length in existing capacitor structures lead to excessively high resistance differences.
The electrode structure is composed of multiple substructures, and electrical connection is achieved by connecting metal segments. The input signal is positioned at the midpoint of the extension direction, which shortens the difference in signal channel length and improves capacitance and Q value.
It effectively reduces the voltage drop difference in the capacitor structure, increases the capacitance and Q value, increases the device density, and reduces the difficulty of forming the metal segment size.
Smart Images
Figure CN117497518B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing, and in particular to a capacitor structure. Background Technology
[0002] Capacitors are widely used in analog circuits and mixed-signal integrated circuits. Capacitors are typically composed of electrically isolated metal plates. In integrated circuits, metal-oxide-metal (MOM) capacitors are widely used due to their high capacitance.
[0003] As technology advances and feature sizes decrease, metal segments can only be processed in one direction; that is, the formed metal segments can only extend in one direction. Therefore, grid-like capacitor plates can only be constructed in the form of upper and lower metal segments.
[0004] However, capacitors with this structure will experience a decrease in both capacitance and Q value. Summary of the Invention
[0005] The problem solved by this invention is to provide a capacitor structure that improves capacitance and Q value.
[0006] To address the above problems, the present invention provides a capacitor structure, comprising:
[0007] A first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are identical electrode structures, the electrode structure includes: a plurality of substructures; each substructure includes: a first metal segment and a second metal segment located on the same layer, both extending along a first direction and arranged parallel to each other along a second direction, wherein the first direction and the second direction are perpendicular to each other; a third metal segment and a fourth metal segment located on the same layer, both extending along the second direction and located above the first metal segment and the second metal segment, arranged parallel to each other along the first direction; a first through-hole penetrating the dielectric material between the first metal segment and the third metal segment; a second through-hole penetrating the dielectric material between the first metal segment and the fourth metal segment; and a third through-hole penetrating the dielectric material between the second metal segment and the third metal segment; the electrode structure further includes: a connecting metal segment electrically connected to the plurality of subunits, the midpoint of the connecting metal segment along its extension direction being suitable for input signals.
[0008] Optionally, the substructure includes: a plurality of second metal segments arranged in parallel along a second direction; and a plurality of third through holes, each corresponding to one of the plurality of second metal segments.
[0009] Optionally, multiple second metal segments of the substructure of the first electrode structure and multiple second metal segments of the corresponding substructure of the second electrode structure are arranged in the same layer or alternately.
[0010] Optionally, along the second direction, the first metal segment is located on one side of the plurality of second metal segments.
[0011] Optionally, along the second direction, the first metal segment of the substructure of the first electrode structure and the first metal segment of the corresponding substructure of the second electrode structure are located on both sides of the second metal segment of the substructure of the first electrode structure and the second metal segment of the corresponding substructure of the second electrode structure, respectively.
[0012] Optionally, the substructure includes: a plurality of fourth metal segments arranged in parallel along a first direction; and a plurality of second through holes, each corresponding to one of the plurality of fourth metal segments.
[0013] Optionally, multiple fourth metal segments of the substructure of the first electrode structure and multiple fourth metal segments of the corresponding substructure of the second electrode structure are arranged in the same layer or alternately.
[0014] Optionally, along the first direction, the third metal segment is located on one side of the plurality of fourth metal segments.
[0015] Optionally, along the first direction, the third metal segment of the substructure of the first electrode structure and the third metal segment of the corresponding substructure of the second electrode structure are located on both sides of the fourth metal segment of the substructure of the first electrode structure and the fourth metal segment of the corresponding substructure of the second electrode structure, respectively.
[0016] Optionally, along the first direction, both the first metal segment and the second metal segment span across the third metal segment and the fourth metal segment.
[0017] Optionally, along the second direction, both the fourth metal segment and the third metal segment span the first metal segment and the second metal segment.
[0018] Optionally, the connecting metal segment extends along the first direction, and the connecting metal segment is located in the same layer as the first metal segment and the second metal segment; the connecting metal segment is located on one side of the plurality of substructures along the second direction; one of the third metal segment and the fourth metal segment is connected to the connecting metal segment through a connecting through hole.
[0019] Optionally, along the second direction, the connecting metal segment of the first electrode structure and the connecting metal segment of the second electrode structure are located on both sides of the plurality of substructures of the first electrode structure and the plurality of substructures of the second electrode structure, respectively.
[0020] Optionally, the connecting metal segment is located on the side of the first metal segment away from the second metal segment.
[0021] Optionally, the fourth metal segment extends above the connecting metal segment; the connecting through-hole penetrates the dielectric material between the fourth metal segment and the connecting metal segment.
[0022] Optionally, along the extension direction, the connecting metal segment spans the plurality of substructures.
[0023] Optionally, the first metal segment and the second metal segment have the same length.
[0024] Optionally, the length of at least one of the first metal segment and the second metal segment is less than or equal to the length of the third metal segment.
[0025] Optionally, at least a portion of the substructures are spaced apart along at least one of the first and second directions.
[0026] Optionally, at least a portion of the substructures are arranged sequentially along a third direction, wherein the third direction is perpendicular to the first direction and the third direction is perpendicular to the second direction.
[0027] Compared with the prior art, the technical solution of the present invention has the following advantages:
[0028] In the technical solution of this invention, the electrode structure includes multiple substructures, which are electrically connected by connecting metal segments; the key positions of the connecting metal segments along the extension direction are suitable for input signals. By combining multiple substructures into one electrode structure, the difference in signal channel length can be effectively shortened to reduce voltage drop differences, and the capacitance and Q value of the formed capacitor structure can be effectively improved. Attached Figure Description
[0029] Figure 1 This is a top view schematic diagram of a capacitor structure;
[0030] Figure 2 yes Figure 1 A top view of one of the plates in the capacitor structure shown.
[0031] Figure 3 yes Figure 1 A schematic diagram of the cross-sectional structure along line a1a2 in the capacitor structure shown.
[0032] Figure 4 yes Figure 1 A schematic diagram of the cross-sectional structure along line b1b2 in the capacitor structure shown.
[0033] Figure 5 This is a top view schematic diagram of an embodiment of the capacitor structure of the present invention;
[0034] Figure 6 yes Figure 5 A top view of one of the electrode structures in the capacitor structure embodiment shown;
[0035] Figure 7 yes Figure 6 A schematic cross-sectional view of the electrode structure along line A1A2 in the embodiment of the capacitor structure shown.
[0036] Figure 8 yes Figure 6 A schematic cross-sectional view of the electrode structure along line B1B2 in the embodiment of the capacitor structure shown.
[0037] Figure 9 This is a top view schematic diagram of another embodiment of the electrode plate structure of the present invention;
[0038] Figure 10 These are the detection results of the capacitance value at different frequencies of an embodiment of the capacitor structure of the present invention;
[0039] Figure 11 yes Figure 10 The measured Q values of the capacitor structure embodiment shown are at different frequencies. Detailed Implementation
[0040] As can be seen from the background art, existing capacitors suffer from poor performance. This paper analyzes the reasons for these performance problems using a capacitor and its plate structure as an example:
[0041] refer to Figures 1 to 4 A schematic diagram of a capacitor structure is shown. Figure 1 This is a top view schematic diagram of the capacitor structure. Figure 2 yes Figure 1 The diagram shows a top view of one of the plates in the capacitor structure. Figure 3 yes Figure 1 The diagram shows a cross-sectional view of the capacitor structure along line a1a2. Figure 4 yes Figure 1 The diagram shows a cross-sectional view of the capacitor structure along line b1b2.
[0042] like Figure 1 and Figure 2As shown, the capacitor structure includes two electrode structures (shown by solid and dashed lines, respectively). Each electrode structure includes a first metal segment 11 and a second metal segment 12 located on the same layer. Both the first metal segment 11 and the second metal segment 12 extend along a first direction x and are arranged parallel to each other along a second direction y, wherein the first direction x and the second direction y are perpendicular to each other. A third metal segment 13 and a fourth metal segment 14 are also located on the same layer, positioned between the first metal segment 11 and the second metal segment 12. On segment 12, both the first metal segment 11 and the second metal segment 12 extend along the second direction y, and the first metal segment 11 and the second metal segment 12 are arranged parallel to each other along the first direction x; a first through hole 21 penetrates the dielectric material between the first metal segment 11 and the third metal segment 13; a second through hole 22 penetrates the dielectric material between the first metal segment 11 and the fourth metal segment 14; and a third through hole 23 penetrates the dielectric material between the second metal segment 12 and the third metal segment 13.
[0043] Furthermore, there are multiple second metal segments 12 and multiple fourth metal segments 14; along the second direction y, the first metal segment 11 is located on one side of the multiple second metal segments 12; along the first direction x, the third metal segment 13 is located on one side of the multiple fourth metal segments 14. There are multiple second through holes 22 and multiple third through holes 23, with each of the multiple second through holes 22 corresponding to one of the multiple fourth metal segments 14, and each of the multiple third through holes 23 corresponding to one of the multiple second metal segments 12.
[0044] The electrode structure inputs a signal at the middle position of the boundary, that is, the input electrode segment p1, which is in the same layer as the first metal segment 11, is arranged parallel to the first metal segment 11 and is in contact with the midpoint of the first metal segment 11.
[0045] Because the signal is input at the middle position of the electrode structure, the signal path length varies greatly within the electrode structure: for example... Figure 2 As shown, the signal channel length in the first metal segment 11 is half the length of the first metal segment 11, i.e., length a1; the signal channel length in the second metal segment 12, which is furthest from the first metal segment 11, is the sum of half the length of the first metal segment 11 and the length of the complete third metal segment 13, i.e., length a1 + a( Figures 1 to 4 In the capacitor structure shown, the lengths of the first metal segment, the second metal segment, the third metal segment, and the fourth metal segment in the first plate structure and the second plate structure are all equal, and are all a).
[0046] The difference in length between the two signal channels is large. A large difference in signal channel length will cause an excessively high resistance difference, which will lead to a decrease in the capacitance and Q value of the capacitor structure.
[0047] To solve the aforementioned technical problem, the present invention provides a capacitor structure, comprising:
[0048] A first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are identical electrode structures, the electrode structure includes: a plurality of substructures; each substructure includes: a first metal segment and a second metal segment located on the same layer, both extending along a first direction and arranged parallel to each other along a second direction, wherein the first direction and the second direction are perpendicular to each other; a third metal segment and a fourth metal segment located on the same layer, both extending along the second direction and located above the first metal segment and the second metal segment, arranged parallel to each other along the first direction; a first through-hole penetrating the dielectric material between the first metal segment and the third metal segment; a second through-hole penetrating the dielectric material between the first metal segment and the fourth metal segment; and a third through-hole penetrating the dielectric material between the second metal segment and the third metal segment; the electrode structure further includes: a connecting metal segment electrically connected to the plurality of subunits, the midpoint of the connecting metal segment along its extension direction being suitable for input signals.
[0049] In the technical solution of this invention, the electrode structure includes multiple substructures, which are electrically connected by connecting metal segments; the key positions of the connecting metal segments along the extension direction are suitable for input signals. By combining multiple substructures into one electrode structure, the difference in signal channel length can be effectively shortened to reduce voltage drop differences, and the capacitance and Q value of the formed capacitor structure can be effectively improved.
[0050] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0051] refer to Figures 5 to 8 ,in Figure 5 A top view schematic diagram of an embodiment of the capacitor structure of the present invention is shown. Figure 6 yes Figure 5 A top view of one of the electrode structures in the capacitor structure embodiment shown;
[0052] Figure 7 It shows Figure 6A schematic cross-sectional view of the electrode structure along line A1A2 in the embodiment of the capacitor structure shown. Figure 8 It shows Figure 6 A schematic cross-sectional view of the electrode structure along line B1B2 in the embodiment of the capacitor structure shown.
[0053] like Figure 5 As shown, the capacitor structure includes: a first electrode structure (such as...) Figure 5 The structure shown by the solid line) and the second electrode structure (such as Figure 5 (The structure shown by the dashed line in the middle) The first electrode structure and the second electrode structure are electrode structures with the same structure.
[0054] like Figure 5 and Figure 6 As shown, the electrode structure includes: a plurality of substructures 110; each substructure 110 includes: a first metal segment 111 and a second metal segment 112 located on the same layer, both extending along a first direction X, and the first metal segment 111 and the second metal segment 112 arranged parallel along a second direction Y, wherein the first direction X and the second direction Y are perpendicular to each other; a third metal segment 113 and a fourth metal segment 114 located on the same layer, both extending along the second direction Y, the third metal segment 113 and the fourth metal segment 114 being located above the first metal segment 111 and the second metal segment 112 ... The three metal segments 113 and the fourth metal segment 114 are arranged parallel to each other along the first direction X; a first through hole 121 penetrates the dielectric material between the first metal segment 111 and the third metal segment 113; a second through hole 122 penetrates the dielectric material between the first metal segment 111 and the fourth metal segment 114; a third through hole 123 penetrates the dielectric material between the second metal segment 112 and the third metal segment 113; the electrode structure further includes a connecting metal segment 115, which is electrically connected to the plurality of substructures 110, and the midpoint of the connecting metal segment 115 along the extension direction is suitable for input signal.
[0055] The electrode structure is disassembled into multiple substructures 110, which are electrically connected by connecting metal segments 115. The midpoint of the connecting metal segments 115 along their extension direction is suitable for the input signal. By combining multiple substructures 110 into a single electrode structure, the difference in signal channel length can be effectively shortened to reduce voltage drop differences, and the capacitance and Q value of the resulting capacitor structure can be effectively improved.
[0056] Multiple substructures 110 are connected by connecting metal segments 115 to form the electrode structure.
[0057] It should be noted that the electrode structure includes: a substrate (not shown in the figure); at least some of the plurality of substructures 110 are uniformly distributed in a plane parallel to the surface of the substrate.
[0058] In some embodiments of the present invention, at least a portion of the substructures 110 are arranged sequentially along at least one of a first direction X or a second direction Y parallel to the substrate surface; wherein the first direction X and the second direction Y are perpendicular to each other and both parallel to the substrate surface.
[0059] Specifically, such as Figure 5 and Figure 6 In the embodiment shown, the electrode structure includes three substructures 110 in a plane parallel to the surface of the substrate, and the three substructures 110 are arranged sequentially along the first direction X.
[0060] The first metal segment 111 and the second metal segment 112 are used to form a grid extending along the first direction X.
[0061] Both the first metal segment 111 and the second metal segment 112 are elongated strips extending along the first direction X, meaning that the first metal segment 111 and the second metal segment 112 are not bent. Setting the first metal segment 111 and the second metal segment 112 as one-dimensional strips effectively reduces the difficulty of their formation process, thereby providing more space for increasing device density and reducing metal segment size.
[0062] In some embodiments of the present invention, there are multiple second metal segments 112, and the multiple second metal segments 112 are arranged in parallel along the second direction Y; moreover, the spacing between adjacent second metal segments 112 is equal. Specifically, as shown... Figure 5 and Figure 6 As shown, the electrode structure includes: 5 second metal segments 112, which are arranged in parallel at equal intervals along the second direction Y.
[0063] In some embodiments of the present invention, along the second direction Y, the first metal segment 111 is located on one side of the plurality of second metal segments 112, that is, along the second direction Y, the first metal segment 111 is located on one side of all the second metal segments 112. Specifically, the first metal segment 111 is located on one side of five second metal segments 112.
[0064] In some embodiments of the present invention, the lengths of the first metal segment 111 and the second metal segment 112 are equal, that is, along the extension direction, the dimensions of the first metal segment 111 and the second metal segment 112 are equal.
[0065] It should be noted that, in some embodiments of the present invention, the width w1 of at least one of the first metal segment 111 and the second metal segment 112 is less than 20 micrometers. The spacing sp1 between the first metal segment 111 and the second metal segment 112 is in the range of 30 nanometers to 1 micrometer. The spacing sp2 between adjacent second metal segments 112 is in the range of 30 nanometers to 1 micrometer.
[0066] The third metal segment 113 and the fourth metal segment 114 are used to form a grid extending along the second direction Y.
[0067] Both the third metal segment 113 and the fourth metal segment 114 are elongated strips extending along the second direction Y, wherein the second direction Y is parallel to the substrate surface, meaning that the third metal segment 113 and the fourth metal segment 114 are not bent. Setting the third metal segment 113 and the fourth metal segment 114 as one-dimensional strips effectively reduces the fabrication difficulty of the third metal segment 113 and the fourth metal segment 114, thereby providing more space for increasing device density and reducing metal segment size.
[0068] In some embodiments of the present invention, along the second direction Y, the fourth metal segment 114 and the third metal segment 113 both span the first metal segment 111 and the second metal segment 112. That is, along the second direction Y, the third metal segment 113 and the fourth metal segment 114 both extend from the first metal segment 111 to the second metal segment 112, which is furthest from the first metal segment 111.
[0069] Furthermore, in some embodiments of the present invention, along the first direction X, the first metal segment 111 and the second metal segment 112 both span the third metal segment 113 and the fourth metal segment 114. That is, along the first direction X, the first metal segment 111 and the second metal segment 112 both extend from the third metal segment 113 to the fourth metal segment 114, which is furthest from the third metal segment 113.
[0070] Specifically, such as Figure 5 and Figure 6As shown, along the first direction X, the first metal segment 111 and the five second metal segments 112 all span the third metal segment 113 and the fourth metal segment 114; along the second direction Y, the third metal segment 113 and the four metal segments 114 all span the third metal segment 113 and the five fourth metal segments 114.
[0071] Since the electrode structure is composed of multiple substructures 110, the area of each substructure 110 in a plane parallel to the substrate surface is much smaller than the area of the electrode structure. Therefore, in some embodiments of the present invention, the length of at least one of the first metal segment 111 and the second metal segment 112 is less than or equal to the length of the third metal segment 113. Specifically, as shown... Figure 5 and Figure 6 As shown, the dimensions of the first metal segment 111 along the first direction X and the second metal segment 112 along the first direction X are both smaller than the dimensions of the third metal segment 113 along the second direction Y.
[0072] It should be noted that, in some embodiments of the present invention, the width w2 of at least one of the third metal segment 113 and the fourth metal segment 114 is less than 20 micrometers. The spacing sp3 between the third metal segment 113 and the fourth metal segment 114 is in the range of 30 nanometers to 1 micrometer.
[0073] It should also be noted that the electrode structure further includes a dielectric material, which is filled between the first metal segment 111, the second metal segment 112, the third metal segment 113 and the fourth metal segment 114 to achieve electrical isolation.
[0074] Furthermore, the widths of the first metal segment 111, the second metal segment 112, the third metal segment 113, and the fourth metal segment 114 are all relatively small, so the first metal segment 111, the second metal segment 112, the third metal segment 113, and the fourth metal segment 114 can be formed using dual-pattern or multi-pattern processes.
[0075] The first through hole 121 is suitable for realizing the electrical connection between the first metal segment 111 and the third metal segment 113.
[0076] The first through hole 121 along the third direction Z (e.g.) Figure 7 As shown in the diagram, the third direction Z extends perpendicularly to the first direction X and also perpendicular to the second direction Y, meaning the third direction Z is perpendicular to the substrate surface. Therefore, the first via 121 is located at the overlap of the first metal segment 111 and the third metal segment 113.
[0077] Specifically, such as Figure 5 and Figure 6 In the illustrated embodiment, the first metal segment 111 is located on one side of the plurality of second metal segments 112 along the second direction Y, and the third metal segment 113 is located on one side of the fourth metal segment 114 along the first direction X; therefore, one end of the first metal segment 111 along the extending direction overlaps with one end of the third metal segment 113 along the extending direction, so the two ends of the first through hole 121 are in contact with one end of the first metal segment 111 and one end of the third metal segment 113, respectively.
[0078] The second through hole 122 is suitable for realizing the electrical connection between the first metal segment 111 and the fourth metal segment 114.
[0079] The second through hole 122 extends along the third direction Z. Therefore, the second through hole 122 is located at the overlapping position of the first metal segment 111 and the fourth metal segment 114.
[0080] Specifically, such as Figure 5 and Figure 6 In the illustrated embodiment, the first metal segment 111 is located on one side of the plurality of second metal segments 112 along the second direction Y; therefore, one side of the fourth metal segment 114 along the extension direction overlaps with the first metal segment 111; thus, one side of the fourth metal segment 114 and the first metal segment 111 respectively contact the two ends of the second through hole 122.
[0081] The third through hole 123 is suitable for realizing the electrical connection between the second metal segment 112 and the third metal segment 113.
[0082] The third through hole 123 extends in the Z direction along the third direction. Therefore, the third through hole 123 is located at the overlapping position of the second metal segment 112 and the third metal segment 113.
[0083] Specifically, such as Figure 5 and Figure 6 In the illustrated embodiment, the third metal segment 113 is located on one side of the fourth metal segment 114 along the first direction X; therefore, one end of the second metal segment 112 along the extending direction overlaps with the third metal segment 113; thus, one end of the second metal segment 112 and the third metal segment 113 respectively contact the two ends of the third through hole 123.
[0084] In some embodiments of the present invention, there are multiple second metal segments 112 and multiple third through holes 123. Each of the multiple third through holes 123 corresponds to one of the multiple second metal segments 112. That is, each second metal segment 112 is electrically connected to the third metal segment 113 through one of the third through holes 123.
[0085] Specifically, such as Figure 5 and Figure 6 In the embodiment shown, the number of the second metal segments 112 is 5, and the number of the third through holes 123 is also 5; each of the second metal segments 112 is electrically connected to the third metal segment 113 through one of the third through holes 123 provided at the end.
[0086] The connecting metal segment 115 is suitable for realizing electrical connections between the plurality of the substructures 110.
[0087] In some embodiments of the present invention, the connecting metal segment 115 extends along the first direction X, and the connecting metal segment 115 is located in the same layer as the first metal segment 111 and the second metal segment 112; the connecting metal segment 115 is located on the side of the plurality of substructures 110 along the second direction Y; the electrode structure further includes: a connecting through hole 124, the connecting through hole 124 penetrating the dielectric material between one of the third metal segment 113 and the fourth metal segment 114 and the connecting metal layer.
[0088] In some embodiments of the present invention, the connecting metal segment 115 is located on the side of the first metal segment 111 away from the second metal segment 112. Specifically, the electrode structure includes a plurality of second metal segments 112, and along the second direction Y, the first metal segment 111 is located on one side of the plurality of second metal segments 112; the connecting metal segment 115 and the plurality of second metal segments 112 are respectively located on both sides of the first metal segment 111 along the second direction Y.
[0089] In some embodiments of the present invention, the fourth metal segment 114 extends above the connecting metal segment 115; the connecting through-hole 124 penetrates the dielectric material between the fourth metal segment 114 extending above the connecting metal segment 115 and the connecting metal segment 115. The fourth metal segment 114 is used to achieve the electrical connection between the connecting metal segment 115 and the substructure 110, enabling the position of the electrical connection between the substructure 110 and the connecting metal segment 115 to be close to the extension direction of the substructure 110 along the connecting metal segment 115 (e.g., ...). Figure 5 and Figure 6 In the illustrated embodiment, the middle position of the first direction (X) is beneficial to shorten the difference in signal channel length to reduce the voltage drop difference, and is beneficial to improve the capacitance and Q value of the capacitor formed.
[0090] In some embodiments of the present invention, at least a portion of the substructures 110 are spaced apart along at least one of the first direction X and the second direction Y; therefore, the connecting metal segment 115 spans the plurality of substructures 110 along the extension direction.
[0091] Specifically, such as Figure 5 and Figure 6 In the illustrated embodiment, the electrode structure includes three substructures 110 spaced apart along a first direction X; the connecting metal segment 115 extends along the first direction X. Therefore, along the first direction X, the connecting metal segment 115 spans the three substructures 110, extending from the first metal segment 111 of one side of the substructure 110 to the outermost third metal segment 113 of the other side of the substructure 110.
[0092] Continue to refer to Figure 5 and Figure 6 The electrode structure further includes an input electrode segment P1 located in the same layer as the connecting metal segment 115, wherein the input electrode segment P1 is parallel to the connecting metal segment 115 and is in contact with the connecting metal segment 115.
[0093] The input electrode segment P1 is suitable for introducing signals.
[0094] Specifically, the input electrode segment P1 is in the same layer as the connecting metal segment 115. In the direction of vertical extension, the input electrode segment P1 is arranged parallel to one side of the connecting metal segment 115 and is in contact with the side wall of the connecting metal segment 115.
[0095] like Figure 5 and Figure 6 In the illustrated embodiment, the connecting metal segment 115 extends along a first direction X; the input electrode segment P1 and the plurality of substructures 110 are respectively located on both sides of the connecting metal segment 115 along a second direction Y, and the input electrode segment P1 is in contact with the sidewall of the connecting metal segment 115 facing away from the plurality of substructures 110.
[0096] It should be noted that, along the extension direction, the midpoint of the input electrode segment P1 corresponds to the midpoint of the first metal segment 111, thereby allowing the electrode structure to introduce the input signal from the middle position, which can effectively control the difference in signal channel length, which is beneficial to reducing voltage drop difference and improving capacitance and Q value.
[0097] Reference Figure 7 and Figure 8 ,in Figure 7 It shows Figure 6 A schematic cross-sectional view of the electrode structure along line A1A2 in the embodiment shown; Figure 8 It shows Figure 6 A schematic diagram of the cross-sectional structure along line B1B2 in the embodiment of the electrode structure shown.
[0098] In some embodiments of the present invention, at least a portion of the plurality of substructures 110 are arranged sequentially along a third direction Z, wherein the third direction Z is perpendicular to the first direction X and the third direction Z is perpendicular to the second direction Y. Specifically, as shown... Figure 7 and Figure 8 In the illustrated embodiment, the three substructures 110 are arranged at intervals along the third direction Z.
[0099] It should be noted that, in some embodiments of the present invention, the electrode structure includes: a substrate (not shown in the figure); an electrode stack 101 located on the substrate, the electrode stack 101 including: a first electrode layer (not shown in the figure), the first electrode layer including a first metal segment 111, a second metal segment 112 and a connecting metal segment 115; a second electrode layer (not shown in the figure), the second electrode layer located between the first electrode layers, the second electrode layer including a third metal segment 113 and a fourth metal segment 114.
[0100] like Figure 7 and Figure 8 As shown, each substructure 110 includes multiple electrode stacks 101, which are stacked along the third direction Z. The substructure 110 also includes a fourth through-hole 126, which penetrates the dielectric material between adjacent electrode stacks 110 to achieve electrical connection between the multiple electrode stacks 101. Specifically, as... Figure 7 and Figure 8 In the illustrated embodiment, the fourth through hole 125 corresponds to at least one of the first through hole 121, the second through hole 122, or the third through hole 123.
[0101] It should be noted that, Figures 6 to 8 In the illustrated embodiment, the substructure 110 includes one fourth metal segment 114. Based on design requirements, in some embodiments of the present invention, each substructure may also have multiple fourth metal segments.
[0102] Continue to refer to Figure 5 The substructures of the first electrode structure and the substructures of the second electrode structure correspond to each other. That is to say, in the top view of the structural diagram, the distribution range of the substructures of the first electrode structure and the distribution range of the corresponding substructures of the second electrode structure roughly overlap, so that a capacitor can be formed between the two.
[0103] In some embodiments of the present invention, the substructure includes a plurality of second metal segments; therefore, the plurality of second metal segments 112 of the substructure of the first electrode structure and the plurality of second metal segments 612 of the corresponding substructure of the second electrode structure are arranged in the same layer and alternately.
[0104] Therefore, in the capacitor structure, the first metal segment 111 and multiple second metal segments 112 of the substructure of the first electrode structure and the first metal segment 611 and multiple second metal segments 612 of the substructure of the second electrode structure are all on the same layer, parallel to each other, and alternately arranged along the second direction Y.
[0105] Along the second direction Y, the first metal segment 111 of the first electrode structure substructure is located on one side of the second metal segments 112 of the multiple first electrode structure substructures and the second metal segments 612 of the multiple corresponding second electrode structure substructures; the first metal segment 611 of the second electrode structure substructure is located on the other side of the second metal segments 612 of the multiple second electrode structure substructures and the second metal segments 112 of the multiple corresponding first electrode structure substructures.
[0106] Figure 5 In the illustrated embodiment, both the fourth metal segment 114 of the substructure of the first electrode structure and the fourth metal segment 614 of the substructure of the second electrode structure are one. However, in other embodiments of the present invention, the substructure includes multiple fourth metal segments; therefore, the multiple fourth metal segments of the substructure of the first electrode structure and the corresponding multiple fourth metal segments of the substructure of the second electrode structure are arranged in the same layer and alternately.
[0107] Therefore, in other embodiments of the present invention, along the first direction, the third metal segment of the substructure of the first electrode structure is located on one side of one or more fourth metal segments of the substructure of the first electrode structure and one or more fourth metal segments of the corresponding substructure of the second electrode structure; the third metal segment of the substructure of the second electrode structure is located on the other side of one or more fourth metal segments of the substructure of the second electrode structure and one or more fourth metal segments of the corresponding substructure of the first electrode structure.
[0108] Furthermore, in order to facilitate connection to external circuits, the first electrode structure and the second electrode structure are arranged in a centrally symmetrical manner in the top view structural diagram.
[0109] Specifically, such as Figure 5 In the illustrated embodiment, along the second direction Y, the first metal segment 111 of the first electrode structure substructure and the first metal segment 611 of the corresponding second electrode structure substructure are located on both sides of the second metal segment 112 of the first electrode structure substructure and the second metal segment 612 of the corresponding second electrode structure substructure, respectively; along the first direction X, the third metal segment 113 of the first electrode structure substructure and the third metal segment 613 of the corresponding second electrode structure substructure are located on both sides of the fourth metal segment 114 of the first electrode structure substructure and the fourth metal segment 614 of the corresponding second electrode structure substructure, respectively.
[0110] Furthermore, along the second direction Y, the connecting metal segment 115 of the first electrode structure and the connecting metal segment 615 of the second electrode structure are respectively located on both sides of the plurality of substructures of the first electrode structure and the plurality of substructures of the second electrode structure.
[0111] Therefore, along the second direction Y, the fourth metal segment 114 of the substructure of the first electrode structure and the fourth metal segment 614 of the substructure of the second electrode structure extend to both sides, extending above the corresponding connecting metal segments, and are electrically connected through the connecting through holes.
[0112] Furthermore, in some embodiments of the present invention, along the first direction X, the first metal segment 611 and the second metal segment 612 of the substructure of the second electrode structure both span the third metal segment 113 and the fourth metal segment 114 of the corresponding substructure of the first electrode structure; the first metal segment 111 and the second metal segment 112 of the substructure of the first electrode structure both span the third metal segment 613 and the fourth metal segment 614 of the corresponding substructure of the second electrode structure.
[0113] Similarly, along the second direction Y, the third metal segment 613 and the fourth metal segment 614 of the substructure of the second electrode structure both span the first metal segment 111 and the second metal segment 112 of the corresponding substructure of the first electrode structure; the third metal segment 113 and the fourth metal segment 114 of the substructure of the first electrode structure both span the first metal segment 611 and the second metal segment 612 of the corresponding substructure of the second electrode structure.
[0114] and Figure 1 Compared to the capacitor shown, Figure 9 In the capacitor embodiment shown, the lengths L1 and L2+L3 of the signal channels are both reduced. This reduction in signal channel length effectively reduces the difference between different signal channel lengths, which helps to decrease voltage drop differences and improves the capacitance and Q value of the resulting capacitor. (Reference) Figure 9 The diagram shows a top view of another embodiment of the electrode structure of the present invention.
[0115] The similarities between this embodiment and the previous embodiments will not be repeated here. The differences from the previous embodiments are that in some embodiments of the present invention, the number of the fourth metal segments 214 is multiple, and the multiple fourth metal segments 214 are arranged parallel to each other along the first direction X; moreover, the spacing between adjacent fourth metal segments 214 is equal. Specifically, as shown... Figure 9 As shown, the electrode structure includes two fourth metal segments 214, which are arranged in parallel with equal spacing along the first direction X. Specifically, the spacing sp4 between adjacent fourth metal segments 214 is in the range of 30 nanometers to 1 micrometer.
[0116] In some embodiments of the present invention, along the first direction X, the third metal segment 213 is located on one side of the plurality of fourth metal segments 214; that is, along the first direction X, the third metal segment 213 is located on one side of all the fourth metal segments 214. Specifically, the third metal segment 213 is located on one side of two of the fourth metal segments 214.
[0117] In some embodiments of the present invention, there are multiple fourth metal segments 214 and multiple second through holes 222. Each of the multiple second through holes 222 corresponds to one of the multiple fourth metal segments 214. That is, each fourth metal segment 214 is electrically connected to the first metal segment through a second through hole 222.
[0118] Specifically, such as Figure 9 In the embodiment shown, the number of the fourth metal segments 214 is 2, and the number of the second through holes 222 is also 2; each of the fourth metal segments 214 is electrically connected to the first metal segment through one of the second through holes 222 disposed at the end.
[0119] It should be noted that, in some embodiments of the present invention, each substructure 210 includes a plurality of connection through holes 224, and the plurality of connection through holes 224 correspond one-to-one with the plurality of fourth metal segments 214, so as to increase connection points and shorten the difference in length between different signal channels. For example... Figure 9 As shown, multiple fourth metal segments 214 extend above the connecting metal segment 215; any connecting through hole 224 penetrates the dielectric material between the corresponding fourth metal segment 214 and the connecting metal segment 215 extending above the connecting metal segment 215.
[0120] refer to Figure 10 and Figure 11 ,in Figure 10 These are the detection results of the capacitance value at different frequencies of an embodiment of the capacitor structure of the present invention; Figure 11 These are the detection results of the Q value at different frequencies in this embodiment.
[0121] It should be noted that the capacitor structure is implemented for example... Figures 5 to 8 As shown, in the capacitor structure embodiment, the width of the substructure in the first electrode structure and the second electrode structure is 20 micrometers, that is, the width of the substructure between the connecting metal segment of the first electrode structure and the connecting metal segment of the second electrode structure is 20 micrometers; along the second direction, the number of metal segments is 100, that is, the sum of the number of the first metal segment and the number of the second metal segment in the first electrode structure and the second electrode structure is 100; the width of the metal segment is 80 nm, that is, the width of the first metal segment, the second metal segment, the third metal segment and the fourth metal segment in the first electrode structure and the second electrode structure is 80 nm; the interval between adjacent metal segments is 120 nm, that is, the spacing between the first metal segment and the second metal segment, between adjacent second metal segments, and between the third metal segment and the fourth metal segment in the first electrode structure and the second electrode structure is 120 nm.
[0122] It should be noted that, Figure 10 and Figure 11 Another example is also shown. Figure 1 The results of detecting the capacitance and Q values of the capacitor structure at different frequencies. For example... Figure 1 The capacitor structure shown is similar to Figure 10 and Figure 11 The capacitor structure embodiments shown have the same number, same size, and same spacing of metal strips.
[0123] like Figure 10 As shown, the horizontal axis represents the input signal frequency in GHz; the vertical axis represents the capacitance value in F; where solid line 101 represents the change of capacitance value with input signal frequency in the embodiment of the capacitor structure of the present invention, and solid line 102 represents... Figure 1 The capacitance value of the capacitor structure shown varies with the frequency of the input signal.
[0124] from Figure 10 As can be seen, the capacitor structure embodiment of the present invention has a larger capacitance value. When the input signal frequency reaches 5GHz, the capacitance value of the capacitor structure embodiment of the present invention increases by 6.5%.
[0125] like Figure 11 As shown, the horizontal axis represents the input signal frequency in GHz; the vertical axis represents the Q value in C; where solid line 111 represents the variation of the Q value with the input signal frequency in the embodiment of the capacitor structure of the present invention, and solid line 112 represents... Figure 1 The Q value of the capacitor structure shown varies with the frequency of the input signal.
[0126] from Figure 11As can be seen, the capacitor structure embodiment of the present invention has a larger Q value. When the input signal frequency reaches 5 GHz, the Q value of the capacitor structure embodiment of the present invention increases by 21.5%.
[0127] In summary, the electrode structure comprises multiple substructures, which are electrically connected by connecting metal segments. The key positions of these connecting metal segments along their extension direction are suitable for input signals. By combining multiple substructures into a single electrode structure, the difference in signal channel length can be effectively shortened to reduce voltage drop differences, thereby effectively improving the capacitance and Q value of the resulting capacitor.
[0128] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.
Claims
1. A capacitor structure, characterized in that, include: A first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are electrode structures with the same structure, and the electrode structure includes: a plurality of substructures; The substructure includes: A first metal segment and a second metal segment located on the same layer, both the first metal segment and the second metal segment extending along a first direction, and the first metal segment and the second metal segment arranged parallel to each other along a second direction, wherein the first direction and the second direction are perpendicular to each other; The third and fourth metal segments are located on the same layer, and both the third and fourth metal segments extend along the second direction. The third and fourth metal segments are located above the first and second metal segments, and the third and fourth metal segments are arranged parallel to each other along the first direction. A first through hole, the first through hole penetrating the dielectric material between the first metal segment and the third metal segment; The second through hole penetrates the dielectric material between the first metal segment and the fourth metal segment; A third through hole, wherein the third through hole penetrates the dielectric material between the second metal segment and the third metal segment; The electrode structure further includes a connecting metal segment, which is electrically connected to the plurality of substructures, and the midpoint of the connecting metal segment along the extension direction is suitable for the input signal.
2. The capacitor structure as described in claim 1, characterized in that, The substructure includes: a plurality of second metal segments, the plurality of second metal segments being arranged in parallel along a second direction; The plurality of third through holes correspond one-to-one with the plurality of second metal segments.
3. The capacitor structure as described in claim 2, characterized in that, Multiple second metal segments of the substructure of the first electrode structure and multiple second metal segments of the corresponding substructure of the second electrode structure are arranged in the same layer and alternately.
4. The capacitor structure as described in claim 2, characterized in that, Along the second direction, the first metal segment is located on one side of the plurality of second metal segments.
5. The capacitor structure as described in claim 4, characterized in that, Along the second direction, the first metal segment of the substructure of the first electrode structure and the first metal segment of the corresponding substructure of the second electrode structure are located on both sides of the second metal segment of the substructure of the first electrode structure and the second metal segment of the corresponding substructure of the second electrode structure, respectively.
6. The capacitor structure as described in claim 1, characterized in that, The substructure includes: a plurality of fourth metal segments, wherein the plurality of fourth metal segments are arranged in parallel along a first direction; Multiple second through holes, each of which corresponds one-to-one with a multiple fourth metal segment.
7. The capacitor structure as described in claim 6, characterized in that, Multiple fourth metal segments of the substructure of the first electrode structure and multiple fourth metal segments of the corresponding substructure of the second electrode structure are arranged in the same layer and alternately.
8. The capacitor structure as described in claim 6, characterized in that, Along the first direction, the third metal segment is located on one side of the plurality of fourth metal segments.
9. The capacitor structure as described in claim 6, characterized in that, Along the first direction, the third metal segment of the substructure of the first electrode structure and the third metal segment of the corresponding substructure of the second electrode structure are located on both sides of the fourth metal segment of the substructure of the first electrode structure and the fourth metal segment of the corresponding substructure of the second electrode structure, respectively.
10. The capacitor structure as described in claim 1, characterized in that, Along the first direction, both the first metal segment and the second metal segment span across the third metal segment and the fourth metal segment.
11. The capacitor structure as described in claim 1, characterized in that, Along the second direction, both the fourth metal segment and the third metal segment span the first metal segment and the second metal segment.
12. The capacitor structure as described in claim 1, characterized in that, The connecting metal segment extends along the first direction, and the connecting metal segment is located in the same layer as the first metal segment and the second metal segment; The connecting metal segment is located on one side of the plurality of substructures along the second direction; One of the third metal segment and the fourth metal segment is connected to the connecting metal through a connecting through hole.
13. The capacitor structure as described in claim 12, characterized in that, Along the second direction, the connecting metal segment of the first electrode structure and the connecting metal segment of the second electrode structure are respectively located on both sides of the plurality of substructures of the first electrode structure and the plurality of substructures of the second electrode structure.
14. The capacitor structure as described in claim 12, characterized in that, The connecting metal segment is located on the side of the first metal segment away from the second metal segment.
15. The capacitor structure as described in claim 14, characterized in that, The fourth metal segment extends above the connecting metal segment; The connecting through hole penetrates the dielectric material between the fourth metal segment and the connecting metal segment.
16. The capacitor structure as described in claim 1, characterized in that, Along the extension direction, the connecting metal segment spans the plurality of substructures.
17. The capacitor structure as described in claim 1, characterized in that, The first metal segment and the second metal segment are of equal length.
18. The capacitor structure as described in claim 17, characterized in that, The length of at least one of the first metal segment and the second metal segment is less than or equal to the length of the third metal segment.
19. The capacitor structure as described in claim 1, characterized in that, At least a portion of the substructures are spaced apart along at least one of the first and second directions.
20. The capacitor structure as described in claim 1, characterized in that, Of the plurality of substructures, at least a portion of the substructures are arranged sequentially along a third direction, wherein the third direction is perpendicular to the first direction and the third direction is perpendicular to the second direction.