1 / n mode based micro low-loss silicon based fan-shaped substrate integrated waveguide structure
Patent Information
- Application Number
- CN202311369203.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-20
- Publication Date
- 2026-10-27
- Estimated Expiration
- 2043-10-20
AI Technical Summary
[0003]使用SIW技术制造的无源器件不同于使用元器件制造的滤波器，使用元器件制造的无源器件可以通过改变元器件参数实现其性能参数(通带和损耗等)的可调，而使用SIW技术制造的无源器件只能通过改变其结构参数来调整其性能参数，因此为了获取高性能，现有的使用SIW技术制造的无源器件往往面积较大，不利于通信系统的小型化集成
[0020]本发明提供的基于1/n模的微型低损耗硅基扇形基片集成波导结构，利用了圆形波导场分布关于圆的中心对称的特性，提出了一种具有m≥2个扇形金属谐振腔的扇形基片集成波导结构，具体是通过利用至少一条耦合槽线将扇形基片集成波导结构进行分割，形成了m个圆心角相等的扇形金属谐振腔。由于腔体分割越多，每个腔体所占面积越小，因此相较于常规的矩形半模(HM)基片集成波导滤波器、1/4模(QM)基片集成波导滤波器，本发明在保有原有谐振器性能的基础上大大减小了谐振腔体的面积，相应的也就降低了结构的品质因数，从而也就降低了插入损耗并提升了通带带宽。此外，随着分割的扇形金属谐振腔的数量增多，整个结构中可调的结构参数也就越多，可以更为灵活地设计带内带外性能。
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Abstract
Description
Technical Field
[0001] This invention belongs to the field of substrate integrated waveguide technology, specifically relating to a miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode. Background Technology
[0002] Substrate integrated waveguide (SIW) technology, due to its ability to transmit signals on planar dielectric substrates like metallic waveguides, ensuring low-loss signal transmission, has been able to replace rectangular waveguides and planar transmission line structures to continue driving the development of microwave circuit systems. With continuous advancements in manufacturing processes, SIW can be integrated with most communication system components on a single substrate without requiring additional fabrication of specific devices, thereby reducing signal transmission losses and suppressing parasitic phenomena.
[0003] Passive devices manufactured using SIW technology differ from filters manufactured using components. Passive devices manufactured using components can have their performance parameters (passband and loss, etc.) adjusted by changing the component parameters. However, passive devices manufactured using SIW technology can only have their performance parameters adjusted by changing their structural parameters. Therefore, in order to obtain high performance, existing passive devices manufactured using SIW technology are often large in area, which is not conducive to the miniaturization and integration of communication systems. Summary of the Invention
[0004] To address the aforementioned problems in the prior art, this invention provides a miniature low-loss silicon-based sector substrate integrated waveguide structure based on 1 / n mode.
[0005] The technical problem to be solved by this invention is achieved through the following technical solution:
[0006] A miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode includes an upper metal layer, a silicon substrate, and a metal base plate arranged sequentially from top to bottom;
[0007] The silicon substrate has a TSV structure, and the upper metal layer and the metal base plate are connected vertically through the TSV structure to form a fan-shaped substrate integrated waveguide structure.
[0008] The sector-shaped substrate integrated waveguide structure has m sector-shaped metal resonant cavities; the m sector-shaped metal resonant cavities are obtained by dividing the sector-shaped substrate integrated waveguide structure using at least one coupling slot line; the coupling slot line is used to realize the coupling between adjacent sector-shaped metal resonant cavities; where m represents the filter order, m≥2, n=360° / θ, and θ is the central angle of the sector-shaped metal resonant cavity.
[0009] In one embodiment, the upper metal layer further includes: an input feed line and an output feed line;
[0010] The fan-shaped substrate integrated waveguide structure has an input feed port and an output feed port respectively.
[0011] The input feed line is connected to the fan-shaped substrate integrated waveguide structure through the input feed port, and the output feed line is connected to the fan-shaped substrate integrated waveguide structure through the output feed port.
[0012] In one embodiment, the openings of the input feed port and the output feed port are located at the point where the electric field of the fan-shaped substrate integrated waveguide structure is strongest in its operating mode.
[0013] In one embodiment, the TSV structure includes: a TSV for realizing the outermost cavity wall of the m sector-shaped metal resonant cavities, and a perturbation TSV for introducing transmission zeros outside the passband.
[0014] In one embodiment, the perturbation TSV comprises a plurality of perturbation TSVs, which are symmetrically distributed about the central axis of the fan-shaped substrate integrated waveguide structure.
[0015] In one embodiment, the miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode is used to design a filter; when the central angle of the fan-shaped substrate integrated waveguide structure is less than 20°, the plurality of micro-perturbation TSVs are specifically used to disrupt the TM in the filter. 020 The generation of this makes the filter a wide passband filter.
[0016] In one embodiment, the miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode is used to design a filter; when the central angle of the fan-shaped substrate integrated waveguide structure is greater than 20°, the plurality of micro-perturbations TSVs are specifically used to squeeze the TM in the filter. 020 The field distribution characteristics make this filter a dual-passband filter.
[0017] In one embodiment, the silicon substrate is a silicon-based composite dielectric plate, which comprises, from top to bottom, a first SiO2 layer, a silicon dielectric layer, and a second SiO2 layer.
[0018] In one embodiment, θ = 10°, m = 2; or θ = 20°, m = 2; or θ = 10°, m = 4; or θ = 45°, m = 2.
[0019] The present invention also provides a wireless electronic device, which includes any of the above-described miniature low-loss silicon-based fan-shaped substrate integrated waveguide structures based on 1 / n mode.
[0020] This invention provides a miniature, low-loss silicon-based sector-shaped integrated waveguide structure based on 1 / n modes. Utilizing the central symmetry of the circular waveguide field distribution about the circle, it proposes a sector-shaped integrated waveguide structure with m ≥ 2 sector-shaped metal resonant cavities. Specifically, the sector-shaped integrated waveguide structure is divided using at least one coupling slot line, forming m sector-shaped metal resonant cavities with equal central angles. Since the more cavities are divided, the smaller the area occupied by each cavity, compared to conventional rectangular half-mode (HM) and 1 / 4-mode (QM) substrate integrated waveguide filters, this invention significantly reduces the area of the resonant cavities while maintaining the original resonator performance. This correspondingly reduces the structure's quality factor, thereby reducing insertion loss and increasing passband bandwidth. Furthermore, as the number of divided sector-shaped metal resonant cavities increases, more structural parameters become adjustable, allowing for more flexible design of in-band and out-of-band performance.
[0021] The present invention will now be described in further detail with reference to the accompanying drawings. Attached Figure Description
[0022] Figure 1 This is a side view schematic diagram of a miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode provided in an embodiment of the present invention;
[0023] Figure 2 This is a top view schematic diagram of a 1 / 36 mode substrate integrated waveguide wide passband second-order filter provided in an embodiment of the present invention;
[0024] Figure 3 yes Figure 2 The simulation results of the S-parameters of the filter are shown in the figure.
[0025] Figure 4 This is a top view schematic diagram of a 1 / 18-mode substrate integrated waveguide dual-passband second-order filter provided in an embodiment of the present invention;
[0026] Figure 5 yes Figure 4 The simulation results of the S-parameters of the filter are shown in the figure.
[0027] Figure 6 This is a top view schematic diagram of a 1 / 36-mode substrate integrated waveguide dual-passband fourth-order filter provided in an embodiment of the present invention;
[0028] Figure 7 yes Figure 6 The simulation results of the S-parameters of the filter are shown in the figure.
[0029] Figure 8 This is a top view schematic diagram of a 1 / 8-mode substrate integrated waveguide dual-passband second-order filter provided in an embodiment of the present invention;
[0030] Figure 9 yes Figure 8 The simulation results of the S-parameters of the filter are shown in the figure. Detailed Implementation
[0031] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.
[0032] To reduce the area of passive devices manufactured using SIW technology without compromising their performance, thereby facilitating miniaturized integration of communication systems, this invention provides a miniature, low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n modes. Figure 1 A side view of the structure is shown, as follows: Figure 1 As shown, the structure includes an upper metal layer L1, a silicon substrate, and a metal base plate L5 arranged sequentially from top to bottom. The silicon substrate has a TSV (Through Silicon Via) structure, and the upper metal layer and the metal base plate are connected vertically through the TSV structure to form a fan-shaped substrate integrated waveguide structure.
[0033] The fan-shaped substrate integrated waveguide structure has m fan-shaped metal resonant cavities. These m fan-shaped metal resonant cavities are obtained by dividing the fan-shaped substrate integrated waveguide structure using at least one coupling slot line. Here, m represents the filter order, m≥2, n=360° / θ, and θ is the central angle of the fan-shaped metal resonant cavity.
[0034] The aforementioned coupling slot is used to achieve coupling between adjacent sector metal resonators. The coupling method is capacitive coupling. The coupling slot achieves signal transmission between sector metal resonators with a simple structure. Furthermore, the coupling parameters between sector metal resonators can be adjusted simply by adjusting the shape and / or size of the coupling slot.
[0035] Preferably, both the upper metal layer L1 and the metal base plate L5 can be made of copper, but this is not a limitation.
[0036] Preferably, the silicon substrate can be a silicon-based composite dielectric substrate, but it is not limited to this. See also Figure 1 As shown, the silicon-based composite dielectric substrate includes, from top to bottom, a first SiO2 layer L2, a silicon dielectric layer L3, and a second SiO2 layer L4.
[0037] The fan-shaped substrate integrated waveguide structure provided in this embodiment of the invention has various applications. For example, it can be used to design filters or other types of passive devices. The following example illustrates the fan-shaped substrate integrated waveguide structure provided in this embodiment of the invention using filter design as an example.
[0038] For example, Figure 2The image shows a top view of a 1 / 36-mode substrate integrated waveguide wideband second-order filter; as shown... Figure 2 As shown, the filter includes a sector-shaped substrate integrated waveguide structure with a central angle of 20°. This sector-shaped substrate integrated waveguide structure is divided into m = 2 sector-shaped metal resonant cavities with a central angle of 10° by a coupling slot line K. Figure 2 R1 and R2 in the equation.
[0039] Figure 4 The image shows a top view of a 1 / 18-mode substrate integrated waveguide dual-passband second-order filter, as shown below. Figure 4 As shown, the filter includes a sector-shaped substrate integrated waveguide structure with a central angle of 40°; the sector-shaped substrate integrated waveguide structure is divided into m = 2 sector-shaped metal resonant cavities with θ = 20° by a coupling slot line K, i.e. Figure 4 R1 and R2 in the equation.
[0040] Figure 6 The image shows a top view of another 1 / 36-mode substrate integrated waveguide dual-passband filter, as shown below. Figure 6 As shown, the filter includes a sector-shaped substrate integrated waveguide structure with a central angle of 40°; the sector-shaped substrate integrated waveguide structure is divided into m = 4 sector-shaped metal resonant cavities with θ = 10° by three coupling slot lines K, i.e. Figure 6 R1, R2, R3, and R4 in the equation.
[0041] Figure 8 The image shows a top view of a 1 / 8-mode substrate integrated waveguide dual-passband second-order filter, as shown below. Figure 8 As shown, the filter includes a sector-shaped substrate integrated waveguide structure with a central angle of 90°; the sector-shaped substrate integrated waveguide structure is divided into m = 2 sector-shaped metal resonant cavities with θ = 45° by a coupling slot line K, i.e. Figure 8 R1 and R2 in the equation.
[0042] Furthermore, in practical design, the specific shape and dimensions of the coupling groove line K can be adjusted according to actual needs. For example, in... Figure 6 In this context, while ensuring that the coupling performance meets the requirements, the length and width of multiple coupling slots do not need to be exactly equal. Furthermore, near the central corner of the sector, to accommodate the gradually decreasing metal area, the front end dimension of the coupling slot K can be appropriately reduced; for example, to achieve better coupling between adjacent sector-shaped metal resonant cavities, the shape of the coupling slot K can also be designed as follows: Figure 8 The width gradient forms shown are all acceptable.
[0043] Understandably, referring to Figure 2 , 4The filter structures shown in 6 and 8 can be used to design more 1 / n mode substrate integrated waveguide bandpass filters. Filters of different orders and different θ have different performance and characteristics. The embodiments of this invention will not be exhaustive.
[0044] The present invention provides a miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n modes. Utilizing the characteristic of the circular waveguide field distribution being symmetrical about the center of the circle, a sector-shaped substrate integrated waveguide structure with m ≥ 2 sector-shaped metal resonant cavities is proposed. Specifically, the sector-shaped substrate integrated waveguide structure is divided using at least one coupling slot line, forming m sector-shaped metal resonant cavities with equal central angles. Since the more cavities are divided, the smaller the area occupied by each cavity, compared to conventional rectangular half-mode (HM) substrate integrated waveguide filters and 1 / 4-mode (QM) substrate integrated waveguide filters, the present invention significantly reduces the area of the resonant cavity while maintaining the original resonator performance. This correspondingly reduces the quality factor of the structure, thereby reducing insertion loss and increasing passband bandwidth. Furthermore, as the number of divided sector-shaped metal resonant cavities increases, more structural parameters can be adjusted throughout the structure, allowing for more flexible design of in-band and out-of-band performance.
[0045] In this embodiment of the invention, a TSV structure is used to connect the upper metal layer L1 to the metal substrate L5, realizing a three-dimensional silicon-based passive device. This avoids the use of interconnects in the filter, reduces interconnect delay, and thus helps to improve the data transmission bandwidth of the system containing the passive device. Furthermore, the introduction of the TSV structure can further help reduce the area of the passive device and improve its integration density.
[0046] The miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode provided in this embodiment of the invention uses a silicon substrate, so it can be integrated with other silicon-based components without the problem of CTE (coefficient of thermal expansion) mismatch. Therefore, designing passive devices based on the fan-shaped substrate integrated waveguide structure provided in this embodiment of the invention can help improve the thermal reliability of the system, reduce system power consumption, system size and weight, and the system integration method is flexible and the process consistency is good.
[0047] In one embodiment, see Figure 2 , 4 As shown in Figures 6 and 8, the miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode provided in this embodiment of the invention further includes: an input feed line B1 and an output feed line B2; an input feed port 3 and an output feed port 4 are respectively opened on the sector-shaped substrate integrated waveguide structure; the input feed line B1 is connected to the sector-shaped substrate integrated waveguide structure through the input feed port 3, and the output feed line B2 is connected to the sector-shaped substrate integrated waveguide structure through the output feed port 4.
[0048] Preferably, as in Figure 2 , 4 As shown in Figures 6 and 8, the input feed line B1 can be vertically connected to the fan-shaped substrate integrated waveguide structure through the input feed port 3, and the output feed line B2 can be vertically connected to the fan-shaped substrate integrated waveguide structure through the output feed port 4, although this is not mandatory.
[0049] It should be noted that, Figure 2 , 4 The specific structures of the input feed line B1 and the output feed line B2 shown in Figures 6 and 8 are merely examples, and the embodiments of the present invention do not limit the specific structures of the input feed line B1 and the output feed line B2.
[0050] In one embodiment, better electrical coupling can be achieved by optimizing the connection positions of the input feed line B1, the output feed line B2 and the fan-shaped substrate integrated waveguide structure. In this case, the opening positions of the input feed port 3 and the output feed port are preferably located at the point where the electric field of the fan-shaped substrate integrated waveguide structure is strongest in its operating mode.
[0051] Specifically, by modeling and simulating the electric field distribution of the aforementioned fan-shaped substrate integrated waveguide structure in its operating mode, the locations of the strongest electric fields on the two radii of the fan-shaped substrate integrated waveguide structure can be identified. Input feed port 3 and output feed port 4 are then established at these two locations, respectively. Input feed line B1 is connected to the fan-shaped substrate integrated waveguide structure through input feed port 3, and output feed line B2 is connected to the fan-shaped substrate integrated waveguide structure through output feed port 4. This ensures that the connection points of input feed line B1, output feed line B2, and the fan-shaped substrate integrated waveguide structure achieve good electrical coupling.
[0052] In one embodiment, the TSV structure connecting the upper metal layer L1 and the metal base plate L5 may include: a TSV for realizing the outermost cavity wall of the m sector-shaped metal resonant cavities. Figure 2 , 4 TSV is denoted as 6 and 8. a ), and perturbations TSVs used to introduce out-of-passband transmission zeros ( Figure 2 , 4 TSV is denoted as 6 and 8. b ).
[0053] Preferably, see Figure 2 , 4 As shown in Figures 6 and 8, the perturbation TSVs can include multiple perturbation TSVs, which can be symmetrically distributed about the central axis of the fan-shaped substrate integrated waveguide structure.
[0054] The following example, using a filter design, illustrates the distribution location of perturbation TSVs.
[0055] When the central angle of the fan-shaped substrate integrated waveguide structure is less than 20°, multiple micro-perturbation TSVs can be specifically used in the TM of the scrambling filter. 020 The generation of this makes the filter a wideband filter, for example... Figure 2 The filter shown is a wide passband filter. Specifically, when the central angle of the fan-shaped substrate integrated waveguide structure is less than 20°, the perturbation TSV can be set in the TM of the filter. 010 The electric field is weaker and TM 020 In areas with strong electric fields, TM is disturbed. 020 The generation of patterns enables wide passband filtering.
[0056] When the central angle of the fan-shaped substrate integrated waveguide structure is greater than 20°, multiple perturbation TSVs can be specifically used in the TM of the squeeze filter. 020 The field distribution characteristics make this filter a dual-passband filter, for example. Figure 4 , 6 The filters shown in Figures 8 and 9 are all dual-passband filters. Specifically, when the central angle of the fan-shaped substrate integrated waveguide structure is greater than 20°, the perturbation TSV can be set at the tail of the fan-shaped resonator, where TM... 010 With a weak electric field, the perturbation TSV does not change the TM. 010 That is, for the first passband field distribution, the TM 020 The field distribution is perturbed, and the electric field of TM020 is changed by squeezing the field distribution, forming a transmission zero outside the high frequency band, improving the out-of-passband characteristics, and realizing dual passband filtering.
[0057] based on Figure 2The filter structure shown, in a specific example, provides a 1 / 36-mode substrate integrated waveguide wideband second-order filter. This filter uses two θ = 10° sector-shaped metal resonators to form the filter structure. Specifically, in this wideband filter, the upper metal layer L1 and the metal base plate L5 are both made of copper, with a copper thickness of 3 μm. Multiple dielectric vias are formed inside the silicon substrate, which can be obtained by etching. Each dielectric via has a diameter of 30 μm and a spacing of 120 μm. The vias are filled with copper to form TSVs. The silicon dielectric layer L3 has a thickness of 200 μm, and the first SiO2 layer L2 and the second SiO2 layer L4 both have a thickness of 2 μm. The entire filter comprises two sector-shaped metal resonant cavities, R1 and R2, with a radius of 3.38 mm. These cavities are electrically coupled via a coupling slot line K, with lengths of 2.65 mm and widths of 0.02 mm. The filter's input and output are electrically coupled to the integrated waveguide structure on the sector-shaped substrate via input feed line B1 and output feed line B2, respectively. The entire filter has an area of only 4.1 mm × 2.036 mm, classifying it as a miniature device. Furthermore, each sector-shaped metal resonant cavity contains a separate micro-perturbation TSV. b Used to achieve out-of-band transmission zeros, their approximate location is in the middle section of the resonant cavity near the tail end, where TM... 010 Weak electric field and TM 020 The electric field is relatively strong.
[0058] Figure 3 The simulation results of the S-parameters of the above-mentioned 1 / 36-mode substrate integrated waveguide wide passband 2 filter are shown. It can be seen that the filter has good in-band characteristics, with a center frequency of 17.96 GHz, a relative bandwidth of 89.2%, and an in-band loss of -0.29 dB, exhibiting wide passband and low loss characteristics.
[0059] based on Figure 4The filter structure shown, in a specific example, provides a 1 / 18-mode substrate integrated waveguide dual-passband second-order filter. This filter uses two θ = 20° sector-shaped metal resonators to form the filter structure. Specifically, in this dual-passband filter, the upper metal layer L1 and the metal base plate L5 are both made of copper, with a copper thickness of 3 μm. Multiple dielectric vias are formed inside the silicon substrate, which can be obtained by etching. Each dielectric via has a diameter of 30 μm and a spacing of 120 μm. The vias are filled with copper to form TSVs. The silicon dielectric layer L3 has a thickness of 200 μm, and the first SiO2 layer L2 and the second SiO2 layer L4 both have a thickness of 2 μm. The entire filter comprises two sector-shaped metal resonant cavities, R1 and R2, with a radius of 3.38 mm. These cavities are electrically coupled via a coupling slot line K, with lengths of 2.91 mm and widths of 0.09 mm. The filter's input and output are electrically coupled to the integrated waveguide structure on the sector-shaped substrate via input feed line B1 and output feed line B2, respectively. The entire filter has an area of only 4.4 mm × 3.056 mm, classifying it as a miniature device. Furthermore, each sector-shaped metal resonant cavity contains a separate perturbation TSV to achieve out-of-band transmission zeros, improving the filter's out-of-band characteristics. The approximate location of this perturbation TSV is in the middle section of the resonant cavity, near the tail end. 010 With a weak electric field, the perturbation TSV does not change the TM. 010 That is, for the first passband field distribution, the TM 020 The field distribution is perturbed, and the electric field of the TM020 is changed by squeezing the field distribution, thereby generating a transmission zero.
[0060] Figure 5 The simulation results of the S-parameters of the above-mentioned 1 / 18-mode substrate integrated waveguide dual-passband second-order filter are shown. It can be seen that the center frequency of the filter is 16.16GHz / 40.14GHz, the relative bandwidth is 65.8% / 12.2%, and the passband loss is -0.32dB / -0.89dB, which shows that the filter has dual-passband miniature low-loss characteristics.
[0061] based on Figure 6The filter structure shown, in a specific example, provides another 1 / 36-mode substrate integrated waveguide dual-passband fourth-order filter. This filter uses four sector-shaped metal resonators R1 and R2 with an angle of 10° to form the filter structure. Specifically, in this dual-passband filter, the upper metal layer L1 and the metal base plate L5 are both made of copper with a thickness of 3 μm. Multiple dielectric vias are formed inside the silicon substrate, which can be obtained by etching. Each dielectric via has a diameter of 30 μm and a spacing of 120 μm. The vias are filled with copper to form TSVs. The silicon dielectric layer L3 has a thickness of 200 μm, and the first SiO2 layer L2 and the second SiO2 layer L4 both have a thickness of 2 μm. The entire filter includes four sector-shaped metal resonators R1, R2, R3, R4, R5, R6, R7, R8, R9 ... 2、 R3 and R4 have a cavity radius of 3.38 mm. The fan-shaped metal resonator R2 and R3 are electrically coupled by a coupling slot line K with dimensions of 2.92 mm and 0.09 mm, respectively. Similarly, the fan-shaped metal resonator R1 and R2 are electrically coupled by a coupling slot line K with dimensions of 1.9 mm and 0.05 mm, respectively. The fan-shaped metal resonator R3 and R4 are electrically coupled to the integrated waveguide structure on the fan-shaped substrate via input feed line B1 and output feed line B2, respectively. The entire filter has an area of only 4.6 mm × 3.056 mm, classifying it as a miniature device. In addition, the two outermost sector-shaped metal resonators R1 and R4 each contain two perturbation TSVs, and there is also one perturbation TSV between sector-shaped metal resonators R1 and R2, and between sector-shaped metal resonators R3 and R4. These TSVs are used to achieve out-of-band transmission zeros. 010 With a weak electric field, the perturbation TSV does not change the TM. 010 That is, for the first passband field distribution, the TM 020 The field distribution is perturbed, and the electric field of the TM020 is changed by squeezing the field distribution, thereby generating a transmission zero.
[0062] Figure 7 The simulation results of the S-parameters of the aforementioned 1 / 36-mode substrate integrated waveguide dual-passband fourth-order filter are shown. It can be seen that the filter's center frequency is 16.86 GHz / 30.24 GHz, its relative bandwidth is 60.3% / 14.4%, and its passband loss is -0.35 dB / -0.82 dB, exhibiting dual-passband miniaturized low-loss characteristics. Furthermore, it is worth mentioning that by incorporating a fourth-order resonant cavity in this 1 / 36-mode substrate integrated waveguide dual-passband filter, more adjustable structural parameters are added, contributing to improved in-band and out-of-band performance.
[0063] based on Figure 8The filter structure shown, in a specific example, provides another 1 / 8-mode substrate integrated waveguide dual-passband second-order filter. This filter uses two θ = 45° sector-shaped metal resonators to form the filter structure. Specifically, in this dual-passband filter, the upper metal layer L1 and the metal base plate L5 are both made of copper, with a copper thickness of 3 μm. Multiple dielectric vias are formed inside the silicon substrate, which can be obtained by etching. Each dielectric via has a diameter of 30 μm and a spacing of 120 μm. The vias are filled with copper to form TSVs. The silicon dielectric layer L3 has a thickness of 200 μm, and the first SiO2 layer L2 and the second SiO2 layer L4 both have a thickness of 2 μm. The entire filter includes two sector-shaped metal resonators R1 and R2, with a cavity radius of 3.38 mm. The fan-shaped metal resonant cavities R1 and R2 are electrically coupled by a coupling slot line K with dimensions of 2.94 mm and 0.205 mm, respectively. The filter's input and output are electrically coupled to the integrated waveguide structure on the fan-shaped substrate via input feed line B1 and output feed line B2, respectively. The entire filter has an area of only 4.14 mm × 4.4 mm, classifying it as a miniature device. Furthermore, each fan-shaped metal resonant cavity contains eight micro-perturbation TSVs to achieve out-of-band transmission zeros; their distribution locations are shown in [reference needed]. Figure 8 As shown, here TM 010 With a weak electric field, the perturbation TSV does not change the TM. 010 That is, for the first passband field distribution, the TM 020 The field distribution is perturbed, and the electric field of the TM020 is changed by squeezing the field distribution, thereby generating a transmission zero.
[0064] Figure 9 The simulation results of the S-parameters of the above-mentioned 1 / 8-mode substrate integrated waveguide dual-passband second-order filter are shown. It can be seen that the center frequency of the filter is 17.62GHz / 33.48GHz, the relative bandwidth is 45.5% / 22.9%, and the passband loss is -0.56dB / -0.6dB, which shows that the filter has dual-passband miniature low-loss characteristics.
[0065] In summary, the miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode provided by the embodiments of the present invention has a small area and high performance, can be integrated with other silicon-based devices in communication systems, and has many advantages such as helping to reduce system power consumption and improve system reliability.
[0066] Based on the 1 / n-mode miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure provided in this invention embodiment, this invention also provides a wireless electronic device. This wireless electronic device includes any of the 1 / n-mode miniature low-loss silicon-based sector-shaped substrate integrated waveguide structures described above, utilizing the m sector-shaped metal resonant cavities of this structure to achieve filtering and other purposes. In practical applications, this wireless electronic device can be a communication device, but it is not limited to this.
[0067] It should be noted that the terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure.
[0068] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.
[0069] Although this application has been described herein in conjunction with various embodiments, those skilled in the art, by reviewing the accompanying drawings and the disclosure, will understand and implement other variations of the disclosed embodiments in carrying out the claimed application. In the description of this invention, the word "comprising" does not exclude other components or steps, "a" or "an" does not exclude a plurality, and "a plurality" means two or more, unless otherwise explicitly specified. Furthermore, while different embodiments may describe certain measures, this does not mean that these measures cannot be combined to produce good results.
[0070] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.
Claims
1. A miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode, characterized in that, It includes, from top to bottom, an upper metal layer, a silicon substrate, and a metal base plate; The silicon substrate has a TSV structure, and the upper metal layer and the metal base plate are connected vertically through the TSV structure to form a fan-shaped substrate integrated waveguide structure. The sector-shaped substrate integrated waveguide structure has m sector-shaped metal resonant cavities; the m sector-shaped metal resonant cavities are obtained by dividing the sector-shaped substrate integrated waveguide structure using at least one coupling slot line; the coupling slot line is used to realize the coupling between adjacent sector-shaped metal resonant cavities; where m represents the filter order, m≥2, n=360° / θ, and θ is the central angle of the sector-shaped metal resonant cavity; The TSV structure includes: a TSV for realizing the outermost cavity wall of the m sector-shaped metal resonant cavities, and a perturbation TSV for introducing transmission zeros outside the passband; The perturbation TSV includes multiple perturbation TSVs, which are symmetrically distributed about the central axis of the fan-shaped substrate integrated waveguide structure. The miniature low-loss silicon-based sector-shaped integrated waveguide structure based on 1 / n mode is used to design filters; when the central angle of the sector-shaped integrated waveguide structure is less than 20°, the multiple micro-perturbation TSVs are specifically used to disrupt the TM in the filter. 020 The generation of this makes the filter a wide passband filter; when the central angle of the fan-shaped substrate integrated waveguide structure is greater than 20°, the multiple micro-perturbations TSV are specifically used to squeeze the TM in the filter. 020 The field distribution characteristics make this filter a dual-passband filter.
2. The miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode according to claim 1, characterized in that, The upper metal layer further includes: an input feed line and an output feed line; The fan-shaped substrate integrated waveguide structure has an input feed port and an output feed port respectively. The input feed line is connected to the fan-shaped substrate integrated waveguide structure through the input feed port, and the output feed line is connected to the fan-shaped substrate integrated waveguide structure through the output feed port.
3. The miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode according to claim 2, characterized in that, The openings of the input feed port and the output feed port are located at the points where the electric field is strongest in the fan-shaped substrate integrated waveguide structure during its operating mode.
4. The miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode according to claim 1, characterized in that, The silicon substrate is a silicon-based composite dielectric plate, which includes, from top to bottom, a first SiO2 layer, a silicon dielectric layer, and a second SiO2 layer.
5. The miniature low-loss silicon-based sector-shaped substrate integrated waveguide structure based on 1 / n mode according to claim 1, characterized in that, θ=10°, m=2; or θ=20°, m=2; or θ=10°, m=4; or θ=45°, m=2.
6. A wireless electronic device, characterized in that, The wireless electronic device includes a miniature low-loss silicon-based fan-shaped substrate integrated waveguide structure based on 1 / n mode as described in any one of claims 1 to 5.