芯片结构、芯片制备方法、显示基板和显示装置
By employing a structural design that combines chip wafer units and color conversion layer substrate units in Micro-LED display devices, and utilizing metal bonding layers and wafer bonding technology, the low yield problem in the batch transfer process of Micro-LED display devices has been solved, improving light extraction effect and mechanical strength, and simplifying the transfer process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2022-05-31
- Publication Date
- 2026-07-17
AI Technical Summary
Micro-LED display devices suffer from low yield during mass transfer, especially AlGaInP materials, which suffer from reduced efficiency and insufficient mechanical strength at micrometer-scale chip sizes, leading to increased difficulty in mass transfer.
The structure adopts a chip wafer unit and a color conversion layer substrate unit. The first bonding layer uses metal materials for bonding, combined with metal wafer bonding technology, to connect the chip wafer unit and the color conversion layer substrate unit, preventing light leakage and color crosstalk, and improving the light output effect.
It improves the light extraction performance of Micro-LED display devices, enhances the mechanical strength of the chip structure, simplifies the mass transfer process, and improves product yield.
Smart Images
Figure CN117501355B_ABST