Drive arrangement, radio frequency impedance matcher and radio frequency plasma system

Abstract

The embodiment of the present application provides a kind of driving device, radio frequency matching device and radio frequency plasma system, the driving device includes: driving circuit, driving circuit is connected with first diode, driving circuit is used to turn on first diode, first diode is connected with first capacitor, and first diode is used to control the working state of first capacitor, and the driving circuit includes active device;Self-bias circuit, the first port of self-bias circuit is connected with the anode of first diode, the second port of self-bias circuit is connected with the cathode of first diode, and the self-bias circuit is used to provide negative bias for the anode of the first diode by passive device.The voltage amplitude demand of negative power supply in the driving circuit can be effectively reduced by the driving device, in turn, the circuit loss of driving circuit is reduced, and the reliable turn-off performance of first diode can be enhanced.

Description

Technical Field

[0001] This application relates to the field of semiconductor chip manufacturing technology, and more specifically, to a driving device, a radio frequency impedance matching device, and a radio frequency plasma system. Background Technology

[0002] Radio frequency plasma (RF Plasma) technology is widely used in the field of semiconductor chip manufacturing technology, such as RF plasma etching, deposition, cleaning and other chip manufacturing processes.

[0003] A radio frequency plasma system mainly consists of a radio frequency power supply (RF generator), a radio frequency impedance match (RF-IPM), and a plasma load. The radio frequency power output from the RF generator is coupled to the plasma load via the RF impedance match, ionizing the process gas in the plasma load to form plasma.

[0004] As process parameters (pressure, flow rate, power, temperature, etc.) change continuously, the impedance of the plasma chamber also changes accordingly. To ensure reliable, stable, and efficient operation of the RF power supply, the RF impedance matching device needs to adjust the capacitance value to adapt to the impedance changes of the plasma chamber in real time.

[0005] Currently, RF impedance matching devices adjust the capacitance value by switching the capacitor with an electronic switch. However, the driving circuit of RF impedance matching devices based on this electronic switch has high losses and the reliable turn-off performance of the electronic switch is not good enough. Summary of the Invention

[0006] This application provides a driving device, an RF impedance matching device, and an RF plasma system, which can effectively reduce the voltage amplitude requirement of the negative power supply in the driving circuit, thereby reducing the circuit loss of the driving circuit and enhancing the reliable turn-off performance of the first diode.

[0007] In a first aspect, a driving device is provided, comprising: a driving circuit connected to a first diode for conducting the first diode, the first diode being connected to a first capacitor for controlling the operating state of the first capacitor, the driving circuit including an active device; and a self-biasing circuit, a first port of which is connected to the anode of the first diode, a second port of which is connected to the cathode of the first diode, the self-biasing circuit being used to provide a negative bias to the anode of the first diode through a passive device.

[0008] It should be understood that the first capacitor can be a single capacitor or an equivalent capacitor composed of multiple capacitors connected in series and / or in parallel. The first diode can be a single diode or an equivalent diode composed of multiple diodes connected in series and / or in parallel. The embodiments of this application do not specifically limit the first capacitor and the first diode.

[0009] It should be understood that active devices are electronic components that require a power source to perform their specific functions, including DC power supplies. Passive devices are electronic components that can perform their specific functions without a power source, including resistors, diodes, and capacitors. This self-biased circuit is composed of passive devices, while the drive circuit includes active devices.

[0010] It should be understood that the first diode controls the operating state of the first capacitor as follows: when the first diode is on, the first capacitor is connected to the matching circuit, and the first capacitor contributes its entire capacitance value to the matching circuit (this can be considered as the first capacitor being in an operating state); when the first diode is off, the first capacitor disconnects from the matching circuit, and the first capacitor contributes zero capacitance value to the matching circuit (this can be considered as the first capacitor being in a non-operating state). For example, if the capacitance of the first capacitor is 100pF, when the first diode is on, the first capacitor is connected to the matching circuit, and the first capacitor contributes 100pF of capacitance value to the matching circuit; when the first diode is off, the first capacitor disconnects from the matching circuit, and the first capacitor contributes zero capacitance value to the matching circuit, for example, 0pF. It should be understood that in practical applications, when the first capacitor disconnects from the matching circuit, due to the parasitic parameters of the electronic switch and drive circuit, the first capacitor will still contribute a portion of its capacitance value to the matching circuit, but this scenario should also be understood as the first capacitor contributing zero capacitance value to the matching circuit. The embodiments described in this application are based on an ideal situation, where the first capacitor contributes a zero capacitance value to the matching circuit when it is in a non-working state.

[0011] It should be understood that the self-biasing circuit and the driving circuit are used to collaboratively turn off the first diode. The self-biasing circuit provides a negative bias to the positive terminal of the first diode. This can be understood as follows: when the first diode is turned off, the driving circuit provides a negative current, which extracts the charge carriers stored in the first diode, thereby turning off the first diode. The first port of the self-biasing circuit is connected to the positive terminal of the first diode, and the second port is connected to the negative terminal of the first diode, thus providing a negative bias to the first diode. This negative bias keeps the first diode in a reliable reverse-cutoff state. In other words, when the first diode is turned off, the driving circuit extracts the charge carriers stored in the first diode, and the self-biasing circuit provides a negative bias, thereby maintaining the first diode in a reliable off state, or keeping the first diode in a reliable reverse-cutoff state.

[0012] More specifically, the driving circuit is used to extract the carrier charge stored in the first diode. It is not responsible for providing a negative bias voltage to the first diode; instead, a self-biasing circuit provides the negative bias voltage. Therefore, the embodiments of this application can reduce the voltage amplitude requirement of the negative power supply for the driving circuit. Furthermore, since the losses of the driving circuit are related to the voltage amplitude of the negative power supply and the carrier charge that the first diode needs to release (see formula: P...), the... loss =U*Q, where Q is the carrier charge stored in the first diode that needs to be released when the first diode is turned off, and U is the voltage amplitude of the applied negative power supply. Therefore, by reducing the voltage amplitude requirement of the negative power supply for the driving circuit, the embodiments of this application can effectively reduce the circuit loss of the driving circuit and improve the reliable turn-off performance of the first diode.

[0013] Therefore, through the above-described driving device, the embodiments of this application can effectively reduce the voltage amplitude requirement of the negative power supply of the driving circuit, thereby reducing the circuit loss of the driving circuit and enhancing the reliable turn-off performance of the first diode.

[0014] In conjunction with the first aspect, in some implementations of the first aspect, the self-biased circuit includes: a second capacitor, a third capacitor, a second diode, a third diode, and a first resistor. The first port of the second capacitor is connected to the anode of the first diode. The second port of the second capacitor is connected to the first port of the first resistor and the anode of the third diode. The anode of the second diode is connected to the anode of the first diode. The cathode of the second diode is connected to the second port of the first resistor and the first port of the third capacitor. The cathode of the third diode is connected to the cathode of the first diode. The second port of the third capacitor is connected to the cathode of the first diode.

[0015] Through the self-biased circuit described above, the embodiments of this application use the self-biased circuit and the driving circuit to coordinately control the turn-off of the first diode, thereby reducing the voltage amplitude requirement of the negative power supply in the driving circuit, thereby reducing the loss of the driving circuit, and improving the reliable turn-off performance of the first diode.

[0016] In conjunction with the first aspect, in some implementations of the first aspect, the self-biased circuit includes: a fourth capacitor, a fifth capacitor, a sixth capacitor, a fourth diode, a fifth diode, a sixth diode, a second resistor, and a third resistor. The first port of the fourth capacitor is connected to the anode of the first diode; the second port of the fourth capacitor is connected to the cathode of the fifth diode, the anode of the sixth diode, and the first port of the sixth capacitor; the anode of the fourth diode is connected to the anode of the first diode; the cathode of the fourth diode is connected to the anode of the fifth diode, the first port of the fifth capacitor, and the second port of the sixth capacitor; the fifth diode and the sixth capacitor are connected in parallel; the cathode of the sixth diode is connected to the first port of the third resistor; the first port of the second resistor is connected to the second port of the fifth capacitor; the second port of the second resistor is connected to the cathode of the first diode; and the second port of the third resistor is connected to the cathode of the first diode.

[0017] Through the self-biased circuit described above, the embodiments of this application use the self-biased circuit and the driving circuit to coordinately control the turn-off of the first diode, thereby reducing the voltage amplitude requirement of the negative power supply in the driving circuit, thereby reducing the loss of the driving circuit, and improving the reliable turn-off performance of the first diode.

[0018] In conjunction with the first aspect, in some implementations of the first aspect, the driving circuit includes: a first power supply and a first switch, the first power supply and the first switch being connected in series; a second power supply, a second switch and a third switch, the second power supply, the second switch and the third switch being connected in series; and an isolation circuit, the input terminal of which is connected to the output terminal of the first switch and the output terminal of the second switch, and the output terminal of which is connected to the positive terminal of the first diode.

[0019] Specifically, the first power supply provides a positive current when the first diode is turned on in the driving circuit, and the second power supply provides a negative current when the first diode is turned off in the driving circuit. Due to the presence of the self-biasing circuit, the voltage amplitude of the second power supply does not need to be very large to turn off the first diode. A first switch controls the connection and disconnection of the first power supply, while the second and third switches control the connection and disconnection of the second power supply. The closing and closing of the first, second, and third switches are sequential, allowing the embodiments of this application to effectively turn the first diode on and off. The isolation circuit suppresses interference from the high-voltage, high-power radio frequency signal of the RF power supply to the driving circuit. It can be composed of inductors, inductors and capacitors in parallel, or other forms of filter circuit structures. Thus, without requiring a large negative voltage amplitude power supply, the embodiments of this application can effectively reduce the high-voltage design challenges of the driving circuit while achieving low power consumption.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the driving circuit includes: a third power supply and a fourth switch connected in series; a fourth power supply and a fifth switch connected in series; an isolation circuit, the input terminal of which is connected to the output terminal of the fourth switch and the output terminal of the fifth switch, and the output terminal of which is connected to the positive terminal of the first diode.

[0021] It should be understood that the third power supply provides a positive current when the first diode is turned on by the driving circuit, and the fourth power supply provides a negative current when the first diode is turned off by the driving circuit. Due to the presence of the self-biasing circuit, the voltage amplitude of the fourth power supply does not need to be very large to achieve the turn-off of the first diode. The fourth switch controls the connection and disconnection of the third power supply, and the fifth switch controls the connection and disconnection of the fourth power supply. There is a specific timing sequence between the closing and closing of the fourth and fifth switches. Through this timing sequence, the embodiments of this application effectively turn the first diode on and off. Simultaneously, the isolation circuit is used to suppress the interference of the high-voltage, high-power radio frequency signal from the radio frequency power supply on the driving circuit of the first diode. Its composition can be composed of inductors, inductors and capacitors in parallel, or other forms of filter circuit structures. Without requiring a large voltage amplitude negative power supply, the embodiments of this application can effectively reduce the high-voltage design challenges of the driving circuit while achieving low power consumption.

[0022] In conjunction with the first aspect, in some implementations of the first aspect, the isolation circuit includes a first inductor, a seventh capacitor, and a seventh diode. The output terminal of the first inductor is connected to the input terminals of the seventh capacitor and the seventh diode. The output terminal of the seventh diode is connected to the positive terminal of the first diode. The output terminal of the seventh capacitor is connected to ground.

[0023] By using a low-pass filter composed of a first inductor and a seventh capacitor to suppress the interference of high-voltage, high-power radio frequency signals from the radio frequency power supply on the driving circuit, the embodiments of this application can reduce the inductance value of the first inductor, which is beneficial to improving the turn-on and turn-off speed of the first diode, and can also reduce the device size of the first inductor.

[0024] In conjunction with the first aspect, in some implementations of the first aspect, the isolation circuit includes a second inductor.

[0025] The embodiments of this application use a second inductor to prevent interference from high-voltage, high-power radio frequency signals to the drive circuit, thereby simplifying the design of the isolation circuit for the drive circuit of the drive device.

[0026] In a second aspect, a radio frequency impedance matching device is provided, which includes the driving device described in the first aspect and any possible implementation thereof. The radio frequency impedance matching device further includes at least one first capacitor and at least one first diode, wherein the at least one driving device, the at least one first capacitor and the at least one first diode correspond one-to-one. The radio frequency impedance matching device further includes a signal detection and control module.

[0027] Through this RF impedance matching device, the embodiments of this application can couple the output power of the RF power supply to the load and enable the RF power supply to operate in a reliable and efficient manner.

[0028] In conjunction with the second aspect, in some implementations of the second aspect, the signal detection and control module includes: a first signal detection circuit connected to the output terminal of the RF power supply for detecting signals on the transmission line of the RF power supply; a first signal processing circuit connected to the first signal detection circuit for processing the output of the first signal detection circuit; a second signal detection circuit connected to the load for detecting signals on the transmission line of the load; a second signal processing circuit connected to the second signal detection circuit for processing the output of the second signal detection circuit; and a microcontroller connected to both the first and second signal detection circuits for processing the outputs of the first and second signal detection circuits. The microcontroller is connected to at least one driving device for outputting at least one control signal to the at least one driving device, the control signal being used to control the conduction and cutoff of the first diode.

[0029] Thirdly, a radio frequency plasma system is provided, the radio frequency plasma system including the radio frequency impedance matching device described in the second aspect and one possible implementation of the second aspect, the radio frequency plasma system further including: a radio frequency power supply and a load. Attached Figure Description

[0030] Figure 1 This is a schematic block diagram of a radio frequency plasma system.

[0031] Figure 2 This is a schematic block diagram of a radio frequency impedance matching circuit based on an electronically switched capacitor.

[0032] Figure 3 This is a schematic block diagram of the circuit structure of an existing driving device.

[0033] Figure 4 This is a schematic block diagram of the circuit structure of a driving device provided in this application.

[0034] Figure 5 This is a schematic block diagram of the circuit structure of a self-biased circuit provided in this application.

[0035] Figure 6 This is a schematic block diagram of another self-biased circuit provided in this application.

[0036] Figure 7 This is a schematic block diagram of the circuit structure of a driving circuit provided in this application.

[0037] Figure 8 This is a schematic block diagram of another driving circuit provided in this application.

[0038] Figure 9 This is a schematic block diagram of the circuit structure of an isolation circuit provided in this application.

[0039] Figure 10 This is a schematic block diagram of the circuit structure of a radio frequency impedance matching device provided in this application. Detailed Implementation

[0040] The driving device, radio frequency impedance matching device, and radio frequency plasma system in the embodiments of this application will now be described with reference to the accompanying drawings.

[0041] Figure 1 This is a schematic block diagram of a radio frequency plasma system. The radio frequency plasma system mainly consists of a radio frequency power supply #110, a radio frequency impedance matching device #120, and a plasma chamber #130.

[0042] It should be understood that the operation of this radio frequency plasma system is roughly as follows: The radio frequency power output from the radio frequency power supply #110 is coupled into the plasma chamber #130 via the radio frequency impedance matching device #120, ionizing the process gas inside the plasma chamber #130 to form a plasma composed of electrons, neutral particles, free radicals, etc. Based on the commands or impedance information provided by the radio frequency power supply #110, the radio frequency impedance matching device #120 autonomously performs the impedance transformation function from the load impedance of the plasma chamber #130 to a 50-ohm load.

[0043] It should be understood that, in the embodiments of this application, the operating frequency of the radio frequency power supply #110 includes, but is not limited to, commonly used radio frequency frequencies such as 2MHz, 13.56MHz, 27.12MHz, and 60MHz. The type of plasma chamber #130 includes, but is not limited to, capacitive coupled plasma (CCP) and inductive coupled plasma (ICP).

[0044] Figure 2This is a schematic block diagram of a radio frequency impedance matching device (RF impedance matching device) based on electronically switched capacitors. Specifically, the RF impedance matching device includes a first capacitor switch array and a second capacitor switch array. The first and second capacitor switch arrays are combined to achieve real-time adjustment of the capacitance value. Through this real-time adjustment of the capacitance value, the RF impedance matching device can achieve real-time transformation of changing load impedance. For simplicity, this application embodiment only uses the first capacitor switch array as an example for illustration, but the control method is equally applicable to the second capacitor switch array.

[0045] It should be understood that Figure 2 The first capacitor switch array shown is composed of multiple capacitor branches, and each capacitor branch consists of an electronic switch, a capacitor, and a driving device. Exemplarily, the first capacitor branch of these multiple capacitor branches includes: an electronic switch S1, a capacitor C1, and a driving device. Each capacitor branch is independently controlled, and the control circuit can be understood as a collective representation of the driving devices included in the multiple capacitor branches.

[0046] The following description will use the first capacitor branch as an example to illustrate how to adjust the capacitance value.

[0047] When the electronic switch S1 of the first capacitor branch is closed, capacitor C1 is connected to the first capacitor switch array, thereby increasing the equivalent capacitance value C. eq Increase; when the electronic switch S1 of the first capacitor branch is opened, capacitor C1 is disconnected from the first capacitor switch array, thereby increasing the equivalent capacitance value C. eq Decrease.

[0048] It should be understood that the electronic switch S1 of the first capacitor branch controls the operating state of capacitor C1 in the first capacitor branch. When electronic switch S1 is turned on, capacitor C1 is in the working state, contributing its entire capacitance value to the first capacitor switch array; when electronic switch S1 is turned off, capacitor C1 is in the non-working state, contributing zero capacitance value to the first capacitor switch array. The turning on and off of electronic switch S1 is controlled by a control circuit, which executes the turning on and off of electronic switch S1 based on the control signals it receives.

[0049] By controlling the operating state of capacitor C1 via electronic switch S1 (this operating state can also be understood as: when in the operating state, capacitor C1 is connected to the first capacitor switch array; when in the non-operating state, capacitor C1 is disconnected from the first capacitor switch array), this RF impedance matching device can achieve its capacitance value C eq The system allows for real-time adjustments to adapt to changes in the plasma chamber's impedance.

[0050] It should be understood that the left side (RF IN) of the RF impedance matching device is connected to the RF power supply #110, and the right side (RF OUT) of the RF impedance matching device is connected to the plasma chamber #130, thereby enabling the output power of the RF power supply #110 to be coupled into the plasma chamber #130.

[0051] It should be noted that, in the embodiments of this application, the plasma chamber can also be understood as a type of load. For ease of description, the embodiments of this application use "load" instead of "plasma chamber," indicating that the driving device described in the embodiments of this application can be applied not only to plasma chambers but also to other loads.

[0052] It should also be understood that Figure 2 The circuit block diagram shown is for illustrative purposes only and may include other circuit structures, such as signal detection circuits, signal processing circuits, microcontrollers, and other driving devices, etc. These circuit structures are not included in the provided text. Figure 2 The specific details are shown below. It should be noted that, in the following text, the embodiments of this application use a matching circuit as an equivalent illustration of these circuit structures not specifically shown. As one possible representation, the matching circuit can be represented by a sinusoidal voltage source V. rf Equivalent illustration.

[0053] It should be understood that for radio frequency impedance matching devices, the types of electronic switches include, but are not limited to: bipolar junction transistors (BJTs), insulated gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), PIN diodes, etc. Based on different types of electronic switching devices, corresponding drive control technologies exist.

[0054] This application describes the technical solution of the embodiment of the application using a PIN diode as an example of an electronic switching device, but this description method is not intended to limit the scope of the application.

[0055] The following will combine Figure 3 right Figure 2 The first capacitor switch array shown is described in further detail.

[0056] It should be understood that Figure 2The first capacitor switch array shown includes at least one capacitor branch. The first capacitor branch in the at least one capacitor branch includes a driving device that can be used to control the on and off of the electronic switch S1 of the first capacitor branch, thereby controlling the working state of capacitor C1 and thus affecting the level of the equivalent capacitance value of the first capacitor switch array.

[0057] Figure 3 This is a schematic block diagram of the circuit structure of an existing driving device. The driving device includes: a positive low-voltage power supply, a negative high-voltage power supply, switches S1 and S2, and an isolation inductor L. iso It should be understood that this driving device can also be regarded as the driving circuit of electronic switch D1.

[0058] It should be understood that Figure 3 Only one electronic switch D1 and one capacitor C1 are described, but there are multiple other electronic switches and multiple capacitors. These multiple electronic switches, multiple capacitors, and other circuit structures not yet specifically shown are... Figure 3 The equivalent diagram is represented by a matching circuit.

[0059] It should be understood that, Figure 3 In the schematic diagram shown, the function of the isolation inductor is to suppress the interference of the high-voltage, high-power radio frequency signal from the radio frequency power supply on the driving circuit of the electronic switch D1.

[0060] Specifically, when switch S1 is closed and S2 is open, the positive low-voltage power supply provides a positive current to electronic switch D1 through the isolation inductor, putting electronic switch D1 in a forward conducting state, thereby connecting capacitor C1 to the matching circuit (or, putting capacitor C1 in a working state); when it is necessary to disconnect the connection between electronic switch D1 and the matching circuit (or, putting capacitor C1 in a non-working state); when switch S1 is open and S2 is closed, the negative high-voltage power supply provides a reverse current through the isolation inductor for extracting the charge carriers stored in electronic switch D1 and a reverse bias voltage for reliably turning off electronic switch D1, thereby turning off electronic switch D1 and disconnecting capacitor C1 from the matching circuit.

[0061] However, the voltage required to turn off the electronic switch D1 is easily affected by the capacitance of capacitor C1. The larger the capacitance of capacitor C1, the smaller the negative bias voltage that the electronic switch D1 receives from the negative high voltage power supply. In order to ensure the turn-off performance of the electronic switch, the voltage amplitude of the negative power supply of the RF impedance matching device is very large, which will significantly increase the circuit loss of the drive device and also increase the high voltage design difficulty of the drive device.

[0062] In view of the above-mentioned technical problems, this application provides a driving device, a radio frequency impedance matching device, and a radio frequency plasma system, which can reduce the driving circuit loss of the driving device and enhance the reliable turn-off performance of the electronic switch.

[0063] Figure 4 This is a schematic block diagram of the circuit structure of a driving device provided in this application. Specifically, the driving device includes:

[0064] A driving circuit is connected to a first diode and is used to turn on the first diode. The first diode is connected to a first capacitor and is used to control the working state of the first capacitor. The driving circuit includes active devices.

[0065] The self-biased circuit has its first port connected to the anode of the first diode and its second port connected to the cathode of the first diode. The self-biased circuit is used to provide a negative bias to the anode of the first diode through a passive device.

[0066] It should be understood that the first capacitor can be a single capacitor or an equivalent capacitor composed of multiple capacitors connected in series and / or in parallel. The first diode can be a single diode or an equivalent diode composed of multiple diodes connected in series and / or in parallel. The embodiments of this application do not specifically limit the first capacitor and the first diode.

[0067] It should be understood that active devices are electronic components that require a power source to perform their specific functions, including DC power supplies. Passive devices are electronic components that can perform their specific functions without a power source, including resistors, diodes, and capacitors. This self-biased circuit is composed of passive devices, while the drive circuit includes active devices.

[0068] It should be understood that the first diode controls the operating state of the first capacitor as follows: when the first diode is on, the first capacitor is connected to the matching circuit, and the first capacitor contributes its entire capacitance value to the matching circuit (this can be considered as the first capacitor being in an operating state); when the first diode is off, the first capacitor disconnects from the matching circuit, and the first capacitor contributes zero capacitance value to the matching circuit (this can be considered as the first capacitor being in a non-operating state). For example, if the capacitance value of the first capacitor is 100pF, when the first diode is on, the first capacitor is connected to the matching circuit, and thus contributes 100pF of capacitance value to the matching circuit; when the first diode is off, the first capacitor disconnects from the matching circuit, and thus contributes zero capacitance value to the matching circuit.

[0069] It should be understood that in practical applications, when the first capacitor is disconnected from the matching circuit, due to the parasitic parameters of the electronic switch and the drive circuit, a portion of the capacitance value of the first capacitor will still contribute to the matching circuit. However, this scenario should also be understood as the first capacitor contributing zero capacitance value to the matching circuit. This application's embodiments are described only as an ideal case, where the first capacitor contributes zero capacitance value to the matching circuit when it is in a non-operating state.

[0070] It should be understood that the self-biasing circuit and the driving circuit are used to collaboratively turn off the first diode. The self-biasing circuit provides a negative bias to the positive terminal of the first diode. This can be understood as follows: when the first diode is turned off, the driving circuit provides a negative current, which extracts the charge carriers stored in the first diode, thereby turning off the first diode. The first port of the self-biasing circuit is connected to the positive terminal of the first diode, and the second port is connected to the negative terminal of the first diode, thus providing a negative bias to the first diode. This negative bias keeps the first diode in a reliable reverse-cutoff state. In other words, when the first diode is turned off, the driving circuit extracts the charge carriers stored in the first diode, and the self-biasing circuit provides a negative bias, thereby maintaining the first diode in a reliable off state, or keeping the first diode in a reliable reverse-cutoff state.

[0071] More specifically, the driving circuit is only used to extract the carrier charge stored in the first diode and is not responsible for providing a negative bias voltage to the first diode. Instead, the negative bias voltage is provided to the first diode by a self-biasing circuit. Therefore, the embodiments of this application can reduce the voltage amplitude of the negative power supply of the driving circuit. Furthermore, since the loss of the driving circuit is related to the voltage amplitude of the negative power supply and the carrier charge that the first diode needs to release (see formula: P), loss =U*Q, where Q is the carrier charge stored in the first diode that needs to be released when the first diode is turned off, and U is the voltage amplitude of the applied negative power supply. Therefore, by reducing the voltage amplitude requirement of the negative power supply for the driving circuit, the embodiments of this application can effectively reduce the circuit loss of the driving circuit and improve the reliable turn-off performance of the first diode.

[0072] Therefore, through the above-described driving device, the embodiments of this application can effectively reduce the voltage amplitude of the negative power supply of the driving circuit, thereby reducing the circuit loss of the driving circuit and enhancing the reliable turn-off performance of the first diode.

[0073] Figure 5 This is a schematic block diagram of a self-biased circuit provided in this application. The self-biased circuit includes:

[0074] The second capacitor, the third capacitor, the second diode, the third diode, and the first resistor;

[0075] The first port of the second capacitor is connected to the anode of the first diode; the second port of the second capacitor is connected to the first port of the first resistor and the anode of the third diode; the anode of the second diode is connected to the anode of the first diode; the cathode of the second diode is connected to the second port of the first resistor and the first port of the third capacitor; the cathode of the third diode is connected to the cathode of the first diode; and the second port of the third capacitor is connected to the cathode of the first diode.

[0076] It should be understood that after the driving circuit has completely extracted the charge carriers stored in the first diode and the first diode has entered the off state, the self-bias circuit starts to work to establish a negative voltage in order to maintain the reverse cutoff state of the first diode.

[0077] The following text will use a sinusoidal voltage source V for a matching circuit. rf Instead of illustration, a sinusoidal voltage source V is used. rf As an incentive, the working principle of a self-biased circuit will be briefly explained without loss of generality:

[0078] Assume that when the first diode is off, the excitation voltage rises from zero, and ignore the voltage drop across the first diode. When the excitation voltage rises from zero to its positive peak value, the second and third diodes conduct. The current path is: positive terminal of the excitation – first capacitor – second diode – first resistor – third diode – negative terminal of the excitation, thus the excitation charges the first capacitor. When the excitation voltage reaches its positive peak value, the second and third diodes are off, and the charging of the first capacitor ends. The voltage across the first capacitor is equal to the excitation voltage amplitude V. amp Furthermore, the voltage polarity of the first capacitor is positive at the top and negative at the bottom. When the excitation voltage drops from its positive peak to its negative peak, the current path is: negative terminal of the excitation – third capacitor – first resistor – second capacitor – first capacitor – positive terminal of the excitation. The first capacitor and the excitation are connected in series, charging the second and third capacitors in reverse. The voltage polarity of the second and third capacitors is negative on the left and positive on the right. When the excitation voltage drops to its negative peak voltage, the charging of the second and third capacitors ends. The sum of the voltages of the second and third capacitors is approximately equal to twice the amplitude of the excitation voltage, i.e., V. sw The voltage amplitude is approximately twice that of the excitation voltage, and the voltage polarity of the second and third capacitors is negative at the top and positive at the bottom. When the excitation voltage rises from the negative peak to the positive peak, the current path is: negative terminal of the excitation – third capacitor – first resistor – second capacitor – first capacitor – positive terminal of the excitation. The second and third capacitors discharge, V sw The voltage gradually decreases to zero. After repeating the above cycle several times and reaching a steady state, V sw Voltage between 0 and -2V ampThe voltage varies within a certain range, thereby providing a negative bias voltage to the positive terminal of the first diode.

[0079] Through the self-biased circuit described above, the embodiments of this application use the self-biased circuit and the driving circuit to coordinately control the turn-off of the first diode, thereby reducing the voltage amplitude requirement of the negative power supply in the driving circuit, thereby reducing the loss of the driving circuit, and improving the reliable turn-off performance of the first diode.

[0080] Figure 6 This is a schematic block diagram of another self-biased circuit provided in this application, which includes:

[0081] Fourth capacitor, fifth capacitor, sixth capacitor, fourth diode, fifth diode, sixth diode, second resistor and third resistor;

[0082] The first terminal of the fourth capacitor is connected to the anode of the first diode; the second terminal of the fourth capacitor is connected to the cathode of the fifth diode, the anode of the sixth diode, and the first terminal of the sixth capacitor; the anode of the fourth diode is connected to the anode of the first diode; the cathode of the fourth diode is connected to the anode of the fifth diode, the first terminal of the fifth capacitor, and the second terminal of the sixth capacitor; the fifth diode and the sixth capacitor are connected in parallel; the cathode of the sixth diode is connected to the first terminal of the third resistor; the first terminal of the second resistor is connected to the second terminal of the fifth capacitor; the second terminal of the second resistor is connected to the cathode of the first diode; and the second terminal of the third resistor is connected to the cathode of the first diode.

[0083] The working principle of this self-biased circuit can be referred to the above description, and will not be repeated here.

[0084] Through the self-biased circuit described above, the embodiments of this application use the self-biased circuit and the driving circuit to coordinately control the turn-off of the first diode, thereby reducing the voltage amplitude requirement of the negative power supply in the driving circuit, thereby reducing the loss of the driving circuit, and improving the reliable turn-off performance of the first diode.

[0085] It should be understood that the self-biasing circuit described in the embodiments of this application is not limited to... Figure 5 and Figure 6 The two self-biasing circuit structures shown can also be used with other self-biasing circuit structures that have DC biasing function. The embodiments of this application do not specifically limit the structure of the self-biasing circuit.

[0086] Figure 7 This is a schematic block diagram of the circuit structure of a driving circuit provided in this application. Specifically, the driving circuit includes:

[0087] A first power source and a first switch are connected in series;

[0088] A second power source, a second switch, and a third switch, wherein the second power source, the second switch, and the third switch are connected in series;

[0089] An isolation circuit is provided, the input of which is connected to the output of the first switch and the output of the second switch, and the output of which is connected to the positive terminal of the first diode.

[0090] It should be understood that the first switch, the second switch, and the third switch can be a single switch or an equivalent switch composed of multiple switches connected in parallel and / or in series. The embodiments of this application do not specifically limit the specific form of the first switch, the second switch, and the third switch.

[0091] Specifically, the first power supply provides a positive current when the first diode is turned on by the driving circuit, and the second power supply provides a negative current when the first diode is turned off by the driving circuit. Due to the presence of the self-biasing circuit, the voltage amplitude of the second power supply does not need to be very large to turn off the first diode. The first switch controls the connection and disconnection of the first power supply, and the second and third switches control the connection and disconnection of the second power supply. There is a specific timing sequence between the closing and closing of the first, second, and third switches. Through this timing sequence, the embodiments of this application can effectively turn the first diode on and off. The isolation circuit is used to suppress the interference of the high-voltage, high-power radio frequency signal from the RF power supply on the driving circuit. Its composition can be composed of inductors, inductors and capacitors in parallel, or other forms of filter circuit structures. In the absence of a large voltage amplitude negative power supply, the embodiments of this application can effectively reduce the high-voltage design challenge of the driving circuit while achieving low power consumption. The isolation circuit is used to suppress the interference of the high-voltage, high-power radio frequency signal from the RF power supply on the driving circuit of the first diode. Its composition can be composed of inductors, inductors and capacitors in parallel, or other forms of filter circuit structures. In cases where a large voltage amplitude negative power supply is not required, the embodiments of this application can effectively reduce the high-voltage design challenges of the drive circuit while achieving low power consumption.

[0092] It should be understood that the first power supply is a positive DC power supply, the second power supply is a negative DC power supply, and the types of the first switch, the second switch, and the third switch include, but are not limited to: IGBT devices, MOSFET devices, BJT devices, and relay devices.

[0093] To facilitate the description of the technical solutions of the embodiments of this application, the embodiments of this application use MOSFET devices as an example to illustrate the working principle of the driving device.

[0094] Specifically, when the first switch is turned on and the second and third switches are turned off, the first diode is conducting, and the first capacitor is connected to the matching circuit, thereby increasing the equivalent capacitance C. eq At this point, the self-biasing circuit is in a failed state. After a period of time, the third switch is turned on, and after the first delay time, the first switch is turned off. At this time, the current flows through the isolation circuit, the first diode, the third switch, and the reverse diode of the second switch, and then returns to the input terminal of the isolation circuit. At this time, the self-biasing circuit is still in a failed state. After the second delay time, the second switch is turned on again. At this time, the positive current flowing through the isolation circuit gradually decreases to zero under the action of the second power supply, and then the negative current flowing through the isolation circuit increases in the reverse direction, so that the charge carriers stored in the first diode when it is in the conducting state are extracted by the second power supply. At this time, a DC negative bias voltage begins to slowly accumulate across the self-biasing circuit to achieve reliable turn-off of the first diode.

[0095] More specifically, when the first switch controls the connection of the first power supply, the forward current flowing through the isolation circuit turns on the first diode, which in turn connects the first capacitor to the matching circuit, thereby increasing the equivalent capacitance value C. eq Furthermore, the self-biasing circuit is in a failed state. Then, the second switch is connected, and the second power supply outputs a reverse current. The self-biasing circuit is now operational. This reverse current flows through the first diode, changing its state. Even if the first diode is in a reverse cutoff state, it can disconnect the first capacitor from the matching circuit, thereby reducing the equivalent capacitance value C. eq .

[0096] It should be understood that the second power supply in the connected state releases the carrier charge accumulated in the first diode when it is in the conducting state. After the carrier charge is completely released, the self-biasing circuit slowly provides a negative voltage to the first diode, thereby putting it in the reverse cutoff state. During this process, the self-biasing circuit gradually generates a sufficient DC negative bias voltage across the first diode, ultimately achieving reliable turn-off of the first diode.

[0097] It should be noted that, in this embodiment of the application, the current flowing through the isolation circuit from left to right is defined as positive current, and vice versa as negative current. This definition also applies to the positive and negative designations of the first and second power supplies.

[0098] Figure 8 This is a schematic block diagram of another driving circuit provided in this application. Details are as follows: Figure 8 As shown. The drive circuit includes:

[0099] The third power source and the fourth switch are connected in series.

[0100] A fourth power source and a fifth switch are connected in series.

[0101] An isolation circuit is provided, the input of which is connected to the output of the fourth switch and the output of the fifth switch, and the output of which is connected to the positive terminal of the first diode.

[0102] It should be understood that the fourth switch and the fifth switch can be a single switch or an equivalent switch composed of multiple switches connected in parallel and / or in series. The embodiments of this application do not specifically limit the specific form of the fourth switch and the fifth switch.

[0103] It should be understood that the third power supply provides a positive current when the first diode is turned on by the driving circuit, and the fourth power supply provides a negative current when the first diode is turned off by the driving circuit. Due to the presence of the self-biasing circuit, the voltage amplitude of the fourth power supply does not need to be very large to achieve the turn-off of the first diode. The fourth switch controls the connection and disconnection of the third power supply, and the fifth switch controls the connection and disconnection of the fourth power supply. There is a specific timing sequence between the closing and closing of the fourth and fifth switches. Through this timing sequence, the embodiments of this application effectively turn the first diode on and off. Simultaneously, the isolation circuit is used to suppress the interference of the high-voltage, high-power radio frequency signal from the radio frequency power supply on the driving circuit of the first diode. Its composition can be composed of inductors, inductors and capacitors in parallel, or other forms of filter circuit structures. Without requiring a large voltage amplitude negative power supply, the embodiments of this application can effectively reduce the high-voltage design challenges of the driving circuit while achieving low power consumption.

[0104] It should be understood that the third power supply is a positive DC power supply, the fourth power supply is a negative DC power supply, and the types of the fourth and fifth switches include, but are not limited to: IGBT devices, MOSFET devices, BJT devices, and relay devices.

[0105] To facilitate the description of the technical solutions of the embodiments of this application, the embodiments of this application use MOSFET devices as an example to illustrate the working principle of the driving device.

[0106] Specifically, when the fourth switch is turned on and the fifth switch is turned off, the first diode is conducting, and the first capacitor is connected to the matching circuit, thereby increasing the equivalent capacitance C. eq At this point, the self-biasing circuit is in a failed state. After a period of time, the fourth switch is turned off, and after the first time delay, the fifth switch is turned on again. At this time, the fourth power supply outputs a negative current, which flows through the isolation circuit, thereby causing the charge carriers stored in the first diode when it is in the conducting state to be drawn off by the fourth power supply. At this time, the self-biasing circuit begins to slowly provide a negative bias voltage to the first diode, so that the first diode turns off.

[0107] More specifically, when the fourth switch controls the conduction of the third power supply, the forward current flowing through the isolation circuit turns on the first diode, which in turn connects the first capacitor to the matching circuit, thereby increasing the equivalent capacitance value C. eq Furthermore, the self-biasing circuit is in a failed state. Then, when the fifth switch is turned on, the fourth power supply outputs a reverse current, and the self-biasing circuit is in operation. This reverse current flows through the first diode, changing its state. Even if the first diode is in a reverse cutoff state, it disconnects the first capacitor from the matching circuit, thereby reducing the equivalent capacitance value C. eq .

[0108] It should be understood that the fourth power supply, in its conducting state, can release the carrier charge accumulated in the first diode when it is in the conducting state. After the carrier charge is completely released, the self-biasing circuit slowly provides a reverse voltage to the first diode, thereby putting it in a reverse cutoff state. During this process, the self-biasing circuit gradually generates a sufficient DC negative bias voltage across the first diode, achieving reliable turn-off of the first diode.

[0109] It should be understood that, in the absence of a negative power supply with a large voltage amplitude, the embodiments of this application can effectively reduce the high-voltage design challenges of the drive circuit while achieving low power consumption.

[0110] Figure 9 This is a schematic diagram of the circuit structure of an isolation circuit provided in an embodiment of this application. Specifically, the isolation circuit includes:

[0111] First inductor, seventh capacitor, and seventh diode;

[0112] The output terminal of the first inductor is connected to the input terminal of the seventh capacitor and the input terminal of the seventh diode. The output terminal of the seventh diode is connected to the positive terminal of the first diode, and the output terminal of the seventh capacitor is connected to ground.

[0113] By using a low-pass filter composed of a first inductor and a seventh capacitor to suppress the interference of high-voltage, high-power radio frequency signals from the radio frequency power supply on the driving circuit, the embodiments of this application can reduce the inductance value of the first inductor, which is beneficial to improving the turn-on and turn-off speed of the first diode, and can also reduce the device size of the first inductor.

[0114] As one possible implementation, the isolation circuit includes a second inductor.

[0115] The embodiments of this application use a second inductor to prevent interference from high-voltage, high-power radio frequency signals to the drive circuit, thereby simplifying the design of the isolation circuit for the drive circuit of the drive device.

[0116] This application embodiment also provides a radio frequency impedance matching device, which includes the aforementioned driving device, and further includes at least one first capacitor and at least one first diode, and there is a one-to-one correspondence between at least one driving device, at least one first capacitor and at least one first diode, that is, a first driving device, a first capacitor and a first diode, and the radio frequency impedance matching device also includes a signal detection and control module.

[0117] Through the above-mentioned RF impedance matching device, the embodiments of this application can couple the output power of the RF power supply to the load, and also enable the RF power supply to operate in a reliable, efficient and safe manner.

[0118] As one possible implementation, the signal detection and control module includes:

[0119] The first signal detection circuit is connected to the output terminal of the RF power supply and is used to detect the signal of the RF power supply's transmission line.

[0120] A first signal processing circuit, connected to a first signal detection circuit, is used to process the output of the first signal detection circuit;

[0121] The second signal detection circuit is connected to the load and is used to detect the signal of the load's transmission line.

[0122] The second signal processing circuit is connected to the second signal detection circuit and is used to process the output of the second signal detection circuit.

[0123] A microcontroller is connected to a first signal detection circuit and a second signal detection circuit, and is used to process the output results of the first signal detection circuit and the second signal detection circuit. The microcontroller is connected to at least one driving device and is used to output at least one control signal to the at least one driving device. The control signal is used to control the conduction and cutoff of the first diode.

[0124] Specifically, the signal detection circuit is used to detect information such as voltage, current, power, impedance, and reflection coefficient of the RF power transmission line of the RF power supply. This signal detection circuit can be built with discrete components or integrated circuits. It can be configured at the input, output, or both of the RF impedance matching circuit. The signal processing circuit performs necessary filtering and analog-to-digital conversion on the output of the signal detection circuit. The configuration of the signal processing circuit corresponds one-to-one with that of the signal detection circuit. The microcontroller comprehensively processes instructions, data, and feedback information from the RF power supply and signal detection / processing circuit. It then uses a built-in impedance adjustment algorithm to obtain the target capacitance value of the adjustable capacitor and sends corresponding control signals to at least one driving device, thereby adjusting the capacitance value within the driving device to the target state.

[0125] Figure 10 This is a schematic block diagram of the circuit structure of a radio frequency impedance matching device provided in this application. The radio frequency impedance matching device includes:

[0126] The first signal detection circuit is connected to the radio frequency power supply and is used to detect the signal of the transmission line of the radio frequency power supply.

[0127] A first signal processing circuit, connected to a first signal detection circuit, is used to process the output of the first signal detection circuit;

[0128] The second signal detection circuit is connected to the load and is used to detect the signal of the load's transmission line.

[0129] The second signal processing circuit is connected to the second signal detection circuit and is used to process the output of the second signal detection circuit.

[0130] A microcontroller is connected to a first signal detection circuit and a second signal detection circuit, and is used to process the output results of the first signal detection circuit and the second signal detection circuit. The microcontroller is connected to at least one driving device and is used to output at least one control signal to at least one driving device. The at least one control signal is used to control the on and off of the switch.

[0131] The first capacitor switch array and the second capacitor switch array are used to output the equivalent capacitance value.

[0132] It should be understood that the first capacitor switch array and the second capacitor switch array can be referred to the foregoing description, and will not be repeated here.

[0133] This application also provides a radio frequency plasma system, which includes the aforementioned radio frequency impedance matching device, radio frequency power supply, and load. It should be understood that the load can be the aforementioned plasma chamber or other types of loads; for example, this application does not specifically limit the type of load.

[0134] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0135] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0136] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0137] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0138] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0139] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0140] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A driving device, characterized in that, include: A driving circuit is provided, wherein the driving circuit is connected to a first diode and is used to turn on the first diode; the first diode is connected to a first capacitor and is used to control the operating state of the first capacitor; the driving circuit includes active devices. The self-biased circuit has a first port connected to the anode of the first diode and a second port connected to the cathode of the first diode. The self-biased circuit is used to provide a negative bias to the anode of the first diode through passive components. The self-biased circuit is composed of the passive components.

2. The driving device according to claim 1, characterized in that, The self-biasing circuit includes: The second capacitor, the third capacitor, the second diode, the third diode, and the first resistor. The first port of the second capacitor is connected to the positive terminal of the first diode, and the second port of the second capacitor is connected to the first port of the first resistor and the positive terminal of the third diode. The anode of the second diode is connected to the anode of the first diode, and the cathode of the second diode is connected to the second port of the first resistor and the first port of the third capacitor. The negative terminal of the third diode is connected to the negative terminal of the first diode, and the second port of the third capacitor is connected to the negative terminal of the first diode.

3. The driving device according to claim 1, characterized in that, The self-biasing circuit includes: Fourth capacitor, fifth capacitor, sixth capacitor, fourth diode, fifth diode, sixth diode, second resistor and third resistor, The first port of the fourth capacitor is connected to the positive terminal of the first diode, and the second port of the fourth capacitor is connected to the negative terminal of the fifth diode, the positive terminal of the sixth diode, and the first port of the sixth capacitor. The positive terminal of the fourth diode is connected to the positive terminal of the first diode, the negative terminal of the fourth diode is connected to the positive terminal of the fifth diode, the first port of the fifth capacitor, and the second port of the sixth capacitor, and the fifth diode and the sixth capacitor are connected in parallel; The negative terminal of the sixth diode is connected to the first port of the third resistor; The first port of the second resistor is connected to the second port of the fifth capacitor, the second port of the second resistor is connected to the cathode of the first diode, and the second port of the third resistor is connected to the cathode of the first diode.

4. The driving device according to any one of claims 1 to 3, characterized in that, The driving circuit includes: A first power source and a first switch are connected in series; A second power source, a second switch, and a third switch, wherein the second power source, the second switch, and the third switch are connected in series; An isolation circuit is provided, wherein the input terminal of the isolation circuit is connected to the output terminal of the first switch and the output terminal of the second switch, and the output terminal of the isolation circuit is connected to the positive terminal of the first diode.

5. The driving device according to any one of claims 1 to 3, characterized in that, The driving circuit includes: A third power source and a fourth switch are connected in series; A fourth power source and a fifth switch, wherein the fourth power source and the fifth switch are connected in series; An isolation circuit is provided, wherein the input terminal of the isolation circuit is connected to the output terminal of the fourth switch and the output terminal of the fifth switch, and the output terminal of the isolation circuit is connected to the positive terminal of the first diode.

6. The driving device according to claim 5, characterized in that, The isolation circuit includes: The first inductor, the seventh capacitor, and the seventh diode. The input terminal of the first inductor is connected to the output terminal of the fourth switch and the output terminal of the fifth switch. The output terminal of the first inductor is connected to the input terminal of the seventh capacitor and the input terminal of the seventh diode. The output terminal of the seventh diode is connected to the positive terminal of the first diode. The output terminal of the seventh capacitor is connected to ground.

7. The driving device according to claim 5, characterized in that, The isolation circuit includes a second inductor.

8. A radio frequency impedance matching device, characterized in that, The radio frequency impedance matching device includes at least one driving device according to any one of claims 1 to 7. The RF impedance matching device further includes at least one first capacitor and at least one first diode, wherein the at least one driving device, the at least one first capacitor, and the at least one first diode correspond one-to-one. The radio frequency impedance matching device also includes a signal detection and control module.

9. The RF impedance matching device according to claim 8, characterized in that, The signal detection and control module includes: The first signal detection circuit is connected to the output terminal of the radio frequency power supply and is used to detect the signal of the transmission line of the radio frequency power supply. A first signal processing circuit, connected to the first signal detection circuit, is used to process the output result of the first signal detection circuit; The second signal detection circuit is connected to the load and is used to detect the signal of the transmission line of the load. The second signal processing circuit is connected to the second signal detection circuit and is used to process the output result of the second signal detection circuit; A microcontroller is connected to the first signal detection circuit and the second signal detection circuit. The microcontroller is used to process the output results of the first signal detection circuit and the second signal detection circuit. The microcontroller is connected to at least one of the driving devices and is used to output at least one control signal to the at least one driving device. The control signal is used to control the conduction and cutoff of the first diode.

10. A radio frequency plasma system, characterized in that, The radio frequency plasma system includes the radio frequency impedance matching device as described in claim 8 or 9, and the radio frequency plasma system further includes a radio frequency power supply and a load.

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