Display device and method of manufacturing the same

Abstract

This application provides a display device and a method for manufacturing the same. The display device includes a first substrate and a second substrate. The first substrate includes a light-emitting layer and a light-scattering layer stacked together. The light-emitting layer includes at least one light-emitting element. The light-scattering layer includes a plurality of protrusions disposed on the light-emitting side of the light-emitting element and a cover layer covering the protrusions. The refractive index of the material of the cover layer is greater than the refractive index of the material of the protrusions. The second substrate is disposed on the side of the light-scattering layer away from the light-emitting element. This application can improve the utilization rate of light emitted by the light-emitting element, thereby improving the light conversion efficiency of the display device and enhancing its color gamut.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a display device and a method for manufacturing the same. Background Technology

[0002] QD-OLED displays (quantum dot displays) possess high-quality characteristics such as pure colors, a wider color gamut, wide viewing angles, ultra-high contrast, and fast response times. Therefore, QD-OLED displays have attracted considerable attention.

[0003] In related technologies, QD-OLED display devices typically include a light-emitting element and a quantum dot color conversion layer. The light-emitting element can be a BOLED (blue light source), and the quantum dot color conversion layer converts some of the blue light emitted by the BOLED into red and green light, thus achieving full-color display. Due to the efficiency limitations of BOLED, the light conversion efficiency of the quantum dot color conversion layer is relatively low, resulting in a poor color gamut for QD-OLED display devices. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a display device and its manufacturing method to solve the technical problems of low light utilization rate of light emitted by light-emitting elements, resulting in low light conversion efficiency and poor color gamut of the display device.

[0005] In a first aspect, embodiments of this application provide a display device, comprising: a first substrate, including a light-emitting layer and a light-scattering layer stacked thereon, the light-emitting layer including at least one light-emitting element, the light-scattering layer including a plurality of protrusions disposed on the light-emitting side of the light-emitting element, and a cover layer covering the protrusions, wherein the refractive index of the material of the cover layer is greater than the refractive index of the material of the protrusions; and a second substrate disposed on the side of the light-scattering layer away from the light-emitting element.

[0006] Secondly, embodiments of this application provide a method for manufacturing a display device as described above, comprising: preparing a plurality of protrusion structures on the light-emitting side of a light-emitting layer of a first substrate, the light-emitting layer including at least one light-emitting element; preparing a cover layer on the side of the protrusion structures away from the light-emitting layer, the refractive index of the material of the cover layer being greater than the refractive index of the material of the protrusion structures; and attaching a second substrate to the cover layer.

[0007] The beneficial technical effects of the technical solutions provided in this application include:

[0008] By providing a light scattering layer in the first substrate, the light scattering layer includes multiple protrusions disposed on the light-emitting side of the light-emitting element and a cover layer covering the protrusions. The refractive index of the material of the cover layer is greater than that of the material of the protrusions. That is, by adding a low-refractive-index protrusion and a high-refractive-index cover layer between the light-emitting element and the second substrate as a transition of refractive index, the problem of excessive refractive index difference between the first substrate and the second substrate, resulting in low light transmittance, is avoided.

[0009] Furthermore, the low-refractive-index protrusion structure and the high-refractive-index cover layer arranged sequentially along the propagation direction (light path direction) of the light emitted by the light-emitting element avoid total internal reflection and light loss caused by light entering from a denser medium to a less dense medium, thereby improving the utilization rate (light extraction ratio) of the light emitted by the light-emitting element, and thus improving the light conversion efficiency of the display device and the color gamut of the display device.

[0010] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0011] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0012] Figure 1 This is a schematic diagram of the structure of a display device provided in an embodiment of this application;

[0013] Figure 2 This is a schematic diagram of another display device provided in an embodiment of this application;

[0014] Figure 3 This is a schematic diagram of the Fresnel loss involved in the embodiments of this application;

[0015] Figure 4 This is a schematic diagram of Snell's law as described in the embodiments of this application;

[0016] Figure 5 This is a schematic flowchart illustrating a method for manufacturing a display device according to an embodiment of this application.

[0017] Figure label:

[0018] 11-First substrate; 111-Light emitting layer; 112-Light scattering layer; 112a-Protrusion structure; 112b-Covering layer; 113-Substrate; 114-Thin film transistor layer; 115-Encapsulation layer; 116-Anode; 117-Pixel defining layer; 118-Cathode;

[0019] 12-Second substrate; 121-Blocking layer; 122-Quantum dot color conversion layer; 123-Color filter; 124-Lens group; 125-Transparent cover plate; 126-Light-shielding layer;

[0020] 13-Fill layer;

[0021] 20 - First medium; 30 - Second medium. Detailed Implementation

[0022] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0023] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the word “comprising” as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by the art. The term “and / or” as used herein refers to at least one of the items defined by the term; for example, “A and / or B” can be implemented as “A,” or as “B,” or as “A and B.”

[0024] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0025] In related technologies, QD-OLED display devices typically include a monochrome backlight and a quantum dot color conversion layer for color conversion; for example, the monochrome backlight can be BOLED (blue light source). Specifically, the quantum dot color conversion layer converts a portion of the third color light emitted by the monochrome backlight into the first color light and the second color light, respectively, thus achieving full-color display.

[0026] During the research and development process of this application, it was found that the third color light emitted by the monochromatic backlight has a low light extraction ratio when it is incident on the quantum dot color conversion layer, resulting in low light conversion efficiency of the quantum dot color conversion layer and poor color gamut of the QD-OLED display device.

[0027] The display device and manufacturing method thereof provided in this application are intended to solve the above-mentioned technical problems of the prior art.

[0028] This application provides a display device, such as... Figure 1 , Figure 2As shown, it includes: a first substrate 11 and a second substrate 12. The first substrate 11 includes a light-emitting layer 111 and a light-scattering layer 112 stacked together. The light-emitting layer 111 includes at least one light-emitting element. The light-scattering layer 112 includes a plurality of protrusions 112a disposed on the light-emitting side of the light-emitting element and a cover layer 112b covering the protrusions 112a. The refractive index of the material of the cover layer 112b is greater than the refractive index of the material of the protrusions 112a. The second substrate 12 is disposed on the side of the light-scattering layer 112 away from the light-emitting element.

[0029] like Figure 3 As shown, the specific principle is as follows:

[0030] When light travels from a first medium 20 with a refractive index of n1 to a second medium 30 with a refractive index of n2, a portion of the light is reflected back; this loss is called Fresnel loss. Generally, the reflection coefficient R and the transmission coefficient T are respectively:

[0031]

[0032]

[0033] The Fresnel loss coefficient ηFr is:

[0034]

[0035] In other words, if light is incident from semiconductor n1 (n1 = 1.86) onto air n2 (n2 = 1), then the Fresnel loss coefficient η Fr The value is 0.909, meaning that 90.9% of the light can pass through the interface between the semiconductor and the air.

[0036] Suppose that other semiconductor materials are deposited on the surface of semiconductor n1, and the refractive index of the deposited semiconductor material is... Then η Fr The value was 1.3638, representing a 5.4% increase in transmittance.

[0037] As can be seen from the above, in this embodiment, by adding a low-refractive-index protrusion structure 112a and a high-refractive-index cover layer 112b between the light-emitting element and the second substrate 12 as a transition of refractive index, the problem of excessive refractive index difference between the first substrate 11 and the second substrate 12, resulting in low light transmittance, can be avoided.

[0038] Furthermore, the low-refractive-index protrusion structure 112a and the high-refractive-index cover layer 112b arranged sequentially along the propagation direction of the light emitted by the light-emitting element avoid total internal reflection and light loss caused by light entering from a denser medium to a less dense medium, thereby improving the utilization rate (light extraction ratio) of the light emitted by the light-emitting element, and thus improving the light conversion efficiency of the display device and the color gamut of the display device.

[0039] Optionally, the first color, second color, and third color in the embodiments of this application may include a variety of three primary color combinations. For example, the first color may include red, the second color may include green, and the third color may include blue.

[0040] Optionally, the difference between the refractive index of the material of the cover layer 112b and the refractive index of the material of the protrusion structure 112a is in the range of 0.2-1. By using two materials with a small difference in refractive index to form the cover layer 112b and the protrusion structure 112a, the problem of low light transmittance caused by an excessively large difference in refractive index between the cover layer 112b and the protrusion structure 112a can be avoided.

[0041] In this embodiment, the material of the capping layer 112b can be a metal oxide, and / or the material of the protruding structure 112a can be any one or any combination of polymethyl methacrylate (PMMA), polyethersulfone (PES), a copolymer derivative of polyethersulfone, styrene / acrylonitrile copolymer (SAN), hydroxyethyl methacrylate (HEMA), polymethylpentene-1 (TPX), and polyethylene naphthalate (PEN). Specifically, the material of the capping layer 112b can be any one or any combination of alumina, magnesium oxide, zinc oxide, zirconium oxide, titanium dioxide, indium zinc oxide, or zinc aluminum oxide. For example, alumina has a refractive index of 1.76, and polymethyl methacrylate has a refractive index of 1.49; the difference in refractive index between the two is only 0.27, resulting in high transmittance.

[0042] In this embodiment, the spacing between any two adjacent protrusions 112a can range from 10 nanometers to 200 nanometers (e.g., 10 nanometers, 100 nanometers, 200 nanometers), and / or, the thickness of the protrusion 112a perpendicular to the second substrate 12 can range from 50 nanometers to 500 nanometers (e.g., 50 nanometers, 250 nanometers, 500 nanometers), and / or, the width of the protrusion 112a parallel to the second substrate 12 can range from 60 nanometers to 120 nanometers (e.g., 60 nanometers, 90 nanometers, 120 nanometers), and / or, the length of the protrusion 112a parallel to the second substrate 12 can range from 60 nanometers to 120 nanometers (e.g., 60 nanometers, 90 nanometers, 120 nanometers), and / or, the thickness of the cover layer 112b perpendicular to the second substrate 12 can range from 10 nanometers to 100 nanometers (e.g., 10 nanometers, 50 nanometers, 100 nanometers). This configuration can improve the extraction ratio of light from below without making the light scattering layer 112 too thick, which would affect the thinness of the display device. It can also prevent the protrusions 112a from being too dense, which would cause the emitted light from adjacent protrusions to crosstalk to each other. At the same time, it can prevent the protrusions 112a from being too sparse, which would increase the proportion of light from below distributed in the intervals of the protrusions 112a, which would be detrimental to improving the light extraction rate.

[0043] In practical applications, the second substrate 12 may include a barrier layer 121 (i.e., a barrier substrate) and a quantum dot color conversion layer 122 disposed on the side of the barrier layer 121 away from the first substrate 11.

[0044] In this embodiment, the display device may further include a filling layer 13 located between the cover layer 112b and the barrier layer 121. The refractive index of the material of the filling layer 13 is not greater than that of the material of the barrier layer 121, and / or the refractive index of the material of the filling layer 13 is not less than that of the material of the cover layer 112b. That is, for the cover layer 112b, the filling layer 13, and the barrier layer 121 stacked along the optical path direction, the refractive indices of the cover layer 112b, the filling layer 13, and the barrier layer 121 increase sequentially. This enables total internal reflection of light during the transition from an optically denser medium to an optically less dense medium, thereby reducing light loss and increasing the proportion of light emitted by the light-emitting element that is extracted and incident on the quantum dot color conversion layer 122. This improves the light conversion efficiency of the quantum dot color conversion layer 122 and enhances the color gamut of the display device.

[0045] Optionally, the difference between the refractive index of the filling layer 13 and the refractive index of the barrier layer 121 is 0.01-0.3, and / or the difference between the refractive index of the filling layer 13 and the refractive index of the capping layer 112b is 0.01-0.3. By ensuring that the refractive index difference between adjacent film layers (e.g., filling layer 13 and barrier layer 121, capping layer 112b and filling layer 13) is small, the problem of excessive refractive index difference between adjacent film layers leading to low light transmittance can be avoided.

[0046] In practical applications, the first substrate 11 may further include a thin-film transistor layer disposed on the side of the light-emitting layer 111 away from the light-scattering layer 112. The light-emitting layer 111 is used to emit a third color light (the light-emitting layer 111 can be a BOLED device). The quantum dot color conversion layer 122 includes a first color light conversion section for converting the third color light into a first color light, a second color light conversion section for converting the third color light into a second color light, and a third color light scattering section for scattering the third color light. Specifically, the first color light conversion section includes scattering nanoparticles and quantum dots for converting the third color light into the first color light; the second color light conversion section includes scattering nanoparticles and quantum dots for converting the third color light into the second color light; and the third color light scattering section includes scattering nanoparticles but does not include quantum dots. The scattering nanoparticles typically include one or any combination of titanium dioxide, zinc oxide, and silicon dioxide.

[0047] Optionally, the second substrate 12 may further include a color filter 123 disposed on the side of the quantum dot color conversion layer 122 away from the barrier layer 121. The color filter 123 may include a first color filter, a second color filter, and a third color filter respectively disposed on the side of the first color light conversion section, the second color light conversion section, and the third color light scattering section away from the barrier layer 121. Specifically, the first color filter is disposed on the side of the first color light conversion section away from the barrier layer 121, the second color filter is disposed on the side of the second color light conversion section away from the barrier layer 121, and the third color filter is disposed on the side of the third color light scattering section away from the barrier layer 121. By adding the first color filter, the second color filter, and the third color filter, leakage light can be converted into first color light, second color light, and third color light respectively, further improving the display effect.

[0048] See Figure 1In this embodiment, the first substrate 11 may include a substrate 113, a thin-film transistor layer 114, a light-emitting layer 111, an encapsulation layer 115, and a light-scattering layer 112 stacked together. The second substrate 12 may include a barrier layer 121, a quantum dot color conversion layer 122, a color filter 123, and a transparent cover plate 125 stacked together. Optionally, the first substrate 11 may further include an anode 116 connected to the thin-film transistor layer 114, a pixel defining layer 117 for forming pixel openings, and a cathode 118 covering the light-emitting layer 111. The light-emitting layer 111 is disposed within the pixel openings, and the encapsulation layer 115 is disposed on the side of the cathode 118 away from the substrate 113. The second substrate 12 may further include a light-shielding layer 126 with multiple openings, the quantum dot color conversion layer 122 and the color filter 123 are disposed within the openings, and the transparent cover plate 125 is disposed on the side of the color filter 123 away from the barrier layer 121.

[0049] In a feasible embodiment, the second substrate 12 may further include a plurality of lens groups 124 disposed between the barrier layer 121 and the quantum dot color conversion layer 122. Each lens group 124 corresponds to a light-emitting element, and at least a portion of the lens groups 124 includes a plurality of convex lenses disposed parallel to the plane of the barrier layer 121. The convex surface of each convex lens is disposed close to the side of the barrier layer 121, and the radii of the plurality of convex lenses decrease sequentially outward from the center of each lens group 124 (the convex lens in the middle has the largest radius). The convex lenses are aspherical lenses; optionally, they are hemispherical lenses. By adding convex lenses, the light-gathering property of the lenses increases the critical angle, thereby further improving the light emission ratio. Simultaneously, the sequential decrease in the radius of the plurality of convex lenses outward from the center of the lens group 124 improves the flatness and uniformity of the light.

[0050] like Figure 2 As shown, the first substrate 11 may include a substrate 113, a thin-film transistor layer 114, a light-emitting layer 111, an encapsulation layer 115, and a light-scattering layer 112 stacked together. The second substrate 12 may include a barrier layer 121, a lens group 124, a quantum dot color conversion layer 122, a color filter 123, and a transparent cover plate 125 stacked together. Optionally, the first substrate 11 may further include an anode 116 connected to the thin-film transistor layer 114, a pixel defining layer 117 for forming pixel openings, and a cathode 118 covering the light-emitting layer 111. The light-emitting layer 111 is disposed within the pixel openings, and the encapsulation layer 115 is disposed on the side of the cathode 118 away from the substrate 113. The second substrate 12 may further include a light-shielding layer 126 with multiple openings, the quantum dot color conversion layer 122 and the color filter 123 are disposed within the openings, and the transparent cover plate 125 is disposed on the side of the color filter 123 away from the barrier layer 121.

[0051] It is understandable that at least part of the lens group 124 may also include only one convex lens, which is configured to correspond one-to-one with the light-emitting element.

[0052] In practical applications, the light scattering layer can also be applied to the on-el structure. Specifically, the protrusion structure 112a is disposed on the outside of the cathode 118, and the encapsulation layer 115 is disposed on the side of the cathode 118 and the protrusion structure 112a away from the substrate 113.

[0053] like Figure 4 As shown, the specific principle is as follows:

[0054] According to Snell's law (also known as the law of refraction), when light travels from a first medium 20 with a refractive index of n1 to a second medium 30 with a refractive index of n2, the angles between the light rays and the normal in the two media are θ1 and θ2, respectively. Therefore, n1sinθ1 = n2sinθ2.

[0055] It can be seen that only when the angle of incidence is less than the critical angle θ c Light can be emitted, while other light (with an incident angle greater than or equal to the critical angle θ) can be emitted. c The critical angle is either reflected back into the interior or absorbed. The critical angle loss is given by the formula calculate.

[0056] To reduce critical angle loss, the refractive index of the lens is n. x When the refractive index of the semiconductor is n1, the optical loss is... Therefore, a hemispherical lens can be used as a convex lens. In this case, the critical angle increases and the light output ratio is improved.

[0057] In practical applications, the parameters of a convex lens can be calculated using the formula for focal length. For a convex lens with thickness d and radii of curvature R1 and R2, the effective focal length is:

[0058] 1 / f=(n-1)[1 / R1-1 / R2+(n+1)d / nR1R2].

[0059] Where n is the refractive index of the convex lens material, 1 / f is the optical magnification of the convex lens, and f is the focal length. It can be seen that the smaller the refractive index n of the convex lens material, the larger the focal length of the convex lens. The optical spacing of the convex lens is D = [n(R2-R1)+(n-1)d] / (n-1).

[0060] In this embodiment, the radius of the convex lens ranges from 20 micrometers to 100 micrometers, and / or the difference in radius between two adjacent convex lenses ranges from 10 micrometers to 50 micrometers. This configuration further improves the flatness and uniformity of light.

[0061] In practical applications, the size of each lens group 124 is close to the size of the light-emitting layer 111 (50 micrometers to 200 micrometers), and only slightly larger than the size of the light-emitting layer 111. Adjacent lens groups 124 can be in contact or spaced apart.

[0062] The beneficial technical effects of the technical solutions provided in this application include:

[0063] By providing a light scattering layer 112 in the first substrate 11, the light scattering layer 112 includes a plurality of protrusions 112a disposed on the light-emitting side of the light-emitting element, and a cover layer 112b covering the protrusions 112a. The refractive index of the material of the cover layer 112b is greater than the refractive index of the material of the protrusions 112a. By using the low refractive index protrusions 112a and the high refractive index cover layer 112b, the problem of low light transmittance caused by an excessive refractive index difference between the first substrate 11 and the second substrate 12 is avoided.

[0064] Furthermore, the low-refractive-index protrusion structure 112a and the high-refractive-index cover layer 112b arranged sequentially along the propagation direction (light path direction) of the light emitted by the light-emitting element avoid total internal reflection and light loss caused by light entering from a denser medium to a less dense medium, thereby improving the utilization rate (light extraction ratio) of the light emitted by the light-emitting element, and thus improving the light conversion efficiency of the display device and the color gamut of the display device.

[0065] Based on the same inventive concept, embodiments of this application provide a method for manufacturing the display device as described above, such as... Figure 5 As shown, it includes the following steps:

[0066] S11: A plurality of protrusion structures are formed on the light-emitting side of the light-emitting layer of the first substrate, and the light-emitting layer includes at least one light-emitting element.

[0067] S12: A capping layer is prepared on the side of the protrusion structure away from the light-emitting layer, and the refractive index of the capping layer material is greater than that of the protrusion structure material.

[0068] S13: Attach the second substrate to the cover layer.

[0069] In this step, attaching the second substrate to the cover layer may include: attaching the second substrate to the cover layer in a cascade manner, wherein the cascade thickness ranges from 1 micrometer to 30 micrometers.

[0070] This embodiment is an example of the manufacturing method corresponding to the first embodiment. The technical details of this embodiment and the first embodiment can be referred to each other. This embodiment can also achieve similar technical effects, which will not be repeated here.

[0071] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in the prior art that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0072] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0073] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0074] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0075] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0076] It should be understood that although the steps in the flowcharts of the accompanying drawings are shown sequentially according to the arrows, the order in which these steps are implemented is not limited to the order indicated by the arrows. Unless explicitly stated herein, in some implementation scenarios of this application, the steps in each process can be executed in other orders as required. Moreover, some or all of the steps in each flowchart may include multiple sub-steps or multiple stages based on the actual implementation scenario. Some or all of these sub-steps or stages may be executed at the same time or at different times. In scenarios where the execution times are different, the execution order of these sub-steps or stages can be flexibly configured according to requirements, and this application does not limit this.

[0077] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A display device, characterized by comprising: include: A first substrate includes a light-emitting layer and a light-scattering layer stacked together. The light-emitting layer includes at least one light-emitting element. The light-scattering layer includes a plurality of protrusions disposed on the light-emitting side of the light-emitting element and a cover layer covering the protrusions. The refractive index of the material of the cover layer is greater than the refractive index of the material of the protrusions. A second substrate is disposed on the side of the light scattering layer away from the light-emitting element. The second substrate includes a blocking layer, a quantum dot color conversion layer disposed on the side of the blocking layer away from the first substrate, and a plurality of lens groups disposed between the blocking layer and the quantum dot color conversion layer. Each lens group is disposed in a one-to-one correspondence with the light-emitting element. At least a portion of the lens groups includes a plurality of convex lenses disposed parallel to the plane of the blocking layer. The convex surface of each convex lens is disposed close to the blocking layer. The radii of the plurality of convex lenses decrease sequentially along the direction outward from the center of each lens group. The second substrate includes a light-shielding layer with a plurality of openings. The edge of each lens group contacts the inner wall of the opening of the corresponding light-shielding layer.

2. The display device according to claim 1, characterized in that, The difference between the refractive index of the material of the covering layer and the refractive index of the material of the protruding structure is in the range of 0.2-1.

3. The display device according to claim 2, characterized in that, The material of the covering layer is a metal oxide; And / or, the material of the protruding structure is any one or any combination of polymethyl methacrylate, polyethersulfone, a copolymer derivative of polyethersulfone, styrene / acrylonitrile copolymer, polyhydroxyethyl methacrylate, polymethylpentene-1, and polyethylene naphthalate.

4. The display device according to claim 2, characterized in that, The material of the covering layer is any one or any combination of aluminum oxide, magnesium oxide, zinc oxide, zirconium oxide, titanium dioxide, indium zinc oxide, or aluminum zinc oxide.

5. The display device according to claim 1, characterized in that, The spacing between any two adjacent protrusions ranges from 10 nanometers to 200 nanometers; And / or, the thickness of the protrusion structure perpendicular to the second substrate ranges from 50 nanometers to 500 nanometers; And / or, the width of the protrusion structure parallel to the second substrate ranges from 60 nanometers to 120 nanometers; And / or, the length of the protrusion structure parallel to the second substrate ranges from 60 nanometers to 120 nanometers; And / or, the thickness of the cover layer perpendicular to the second substrate ranges from 10 nanometers to 100 nanometers.

6. The display device according to claim 1, characterized in that, The second substrate includes a barrier layer and a quantum dot color conversion layer disposed on the side of the barrier layer away from the first substrate; The display device further includes a filler layer located between the cover layer and the barrier layer, wherein the refractive index of the filler layer material is not greater than the refractive index of the barrier layer material, and / or the refractive index of the filler layer material is not less than the refractive index of the cover layer material.

7. The display device according to claim 6, characterized in that, The difference between the refractive index of the filling layer material and the refractive index of the barrier layer material is 0.01-0.3; And / or, the difference between the refractive index of the filling layer material and the refractive index of the covering layer material is 0.01-0.

3.

8. The display device according to claim 7, characterized in that, The radius of the convex lens ranges from 20 micrometers to 100 micrometers; And / or, the difference in radius between two adjacent convex lenses ranges from 10 micrometers to 50 micrometers.

9. The display device according to claim 1, characterized in that, The first substrate further includes a thin-film transistor layer disposed on the side of the light-emitting layer away from the light-scattering layer, the light-emitting layer being used to emit a third color light; The second substrate includes a barrier layer and a quantum dot color conversion layer disposed on the side of the barrier layer away from the first substrate. The quantum dot color conversion layer includes a first color light conversion part for converting a third color light into a first color light, a second color light conversion part for converting a third color light into a second color light, and a third color light scattering part for scattering the third color light.

10. A method for manufacturing a display device as described in any one of claims 1 to 9, characterized in that, include: Multiple protrusion structures are formed on the light-emitting side of the light-emitting layer of the first substrate, and the light-emitting layer includes at least one light-emitting element; A cover layer is prepared on the side of the protrusion structure away from the light-emitting layer, wherein the refractive index of the material of the cover layer is greater than the refractive index of the material of the protrusion structure; The second substrate is attached to the cover layer, wherein the second substrate includes a barrier layer, a quantum dot color conversion layer disposed on the side of the barrier layer away from the first substrate, and a plurality of lens groups disposed between the barrier layer and the quantum dot color conversion layer; the lens groups are disposed one-to-one with the light-emitting elements, and at least a portion of the lens groups include a plurality of convex lenses disposed parallel to the plane of the barrier layer, the convex surface of each convex lens being disposed close to the barrier layer, and the radii of the plurality of convex lenses decreasing sequentially along the direction outward from the center of each lens group; the second substrate includes a light-shielding layer having a plurality of openings, and the edge of each lens group is in contact with the inner wall of the opening of the corresponding light-shielding layer.

11. The method for manufacturing a display device according to claim 10, characterized in that, The step of attaching the second substrate to the cover layer includes: The second substrate is bonded to the cover layer using a cassette method, with the cassette thickness ranging from 1 micrometer to 30 micrometers.

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