Perovskite precursor solution, perovskite solar cell and preparation method thereof

Abstract

The application discloses a perovskite precursor solution comprising an ionic liquid and an aprotic polar solvent, and is characterized by comprising the following components: a mixture of the ionic liquid and the aprotic polar solvent as a solvent, wherein the cation of the ionic liquid is a dimethylamine cation, and the anion is a formic acid anion; the aprotic polar solvent is N,N-dimethylformamide and / or dimethyl sulfoxide; and a solute uniformly dispersed in the solvent. The technical scheme of the application effectively avoids the damage of water and oxygen in the air to the liquid-solid conversion process during the crystallization of the perovskite thin film by optimizing the formula of the perovskite precursor solution and adding a certain amount of antioxidant and crystallization-promoting additives in the precursor, so that high-quality perovskite thin films and low-cost perovskite devices can be prepared in the air, and large-scale industrial production and application of perovskite batteries can be realized.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to a perovskite precursor solution, a perovskite solar cell, and a method for preparing the same. Background Technology

[0002] A solar cell is a photoelectric device that converts solar energy into electrical energy. Solar energy, due to its cleanliness, safety, wide distribution, and recyclability, has become an increasingly important form of energy supply. In recent years, metal halide perovskite semiconductor materials have attracted widespread attention due to their strong light absorption, low defect state density, high carrier mobility, and long lifetime, making them well-suited for photovoltaic power generation. Currently, organic-inorganic hybrid perovskite solar cells have achieved conversion efficiencies exceeding 25.7%. However, perovskite materials are highly sensitive to water vapor and oxygen, especially during solution-based perovskite thin film preparation. The transition from the solution-state precursor to the crystalline film is more susceptible to damage from atmospheric water and oxygen, leading to side reactions and material decomposition. Therefore, most perovskite photoelectric devices are fabricated in inert gas atmospheres with very low water and oxygen content, such as glove boxes. This limitation significantly increases costs and hinders large-scale commercialization. Furthermore, the performance of perovskite solar cells continues to decline due to the influence of atmospheric water and oxygen, and their stability still needs improvement. Therefore, developing a method for fabricating high-quality perovskite thin films in air and improving the stability of these devices is of paramount importance and has become a key technology for promoting the practical application of perovskite solar cells. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an optimized perovskite precursor solution formulation. By adding a certain amount of antioxidant additives to the precursor, the damage to the liquid-solid transition process caused by water and oxygen in the air during the crystallization of the perovskite film is effectively avoided. This enables the preparation of high-quality perovskite films and low-cost perovskite devices in air, and enables large-scale industrial production and application of perovskite batteries.

[0004] To achieve the above and other related objectives, the present invention provides a perovskite precursor solution comprising an ionic liquid and an aprotic polar solvent, specifically comprising:

[0005] The solvent is a mixture of an ionic liquid and an aprotic polar solvent, wherein the cation of the ionic liquid is a dimethylamine cation and the anion is a formic acid anion, and the aprotic polar solvent is N,N-dimethylformamide and / or dimethyl sulfoxide; and the solute is uniformly dispersed in the solvent.

[0006] Furthermore, the mass ratio of the ionic liquid to the aprotic polar solvent is 0.1%-10%.

[0007] Furthermore, the cations in the ionic liquid can be expanded to be one or any combination of dimethylamine cations, trimethylamine cations, ethylamine cations, and ethylenediamine cations, and the anions can be expanded to be one or any combination of formic acid anions, acetate anions, fluoroacetic acid anions, and oxalic acid anions.

[0008] Further, the aprotic polar solvent is one or a mixture of combinations of N,N-dimethylformamide and / or dimethyl sulfoxide and / or N-methylpyrrolidone and / or butyrolactone and / or acetonitrile.

[0009] Furthermore, the solute is specifically one or more of lead iodide, lead bromide, lead chloride, formamidine iodide, formamidine bromide, formamidine chloride, methylamine iodide, methylamine bromide, methylamine chloride, cesium iodide, cesium bromide, dimethylamine iodide, dimethylamine bromide, guanidine iodide, and guanidine bromide.

[0010] Furthermore, the molar concentration ratio of the mixture of solute and ionic liquid and aprotic polar solvent is 0.1M-3M.

[0011] This invention also provides a method for preparing perovskite solar cells using the precursor solution as described above, the specific steps of which are as follows:

[0012] 1) The solute is mixed uniformly with a mixture of an ionic liquid and an aprotic polar solvent to obtain a perovskite precursor solution;

[0013] 2) Prepare a hole transport layer on a clean conductive glass substrate (including but not limited to FTO conductive glass, ITO conductive glass, AZO conductive glass, IZO conductive glass, etc.).

[0014] 3) Prepare a hole blocking layer or an electron blocking layer on the layer obtained in step 2);

[0015] 4) Deposit a perovskite layer using the perovskite precursor solution prepared in step 1) on the layer obtained in step 3);

[0016] 5) Prepare an electron transport layer or hole transport layer on the perovskite layer obtained in step 4);

[0017] 4) The electron blocking layer or hole blocking layer obtained in step 5);

[0018] 6) Prepare a back electrode layer on the layer obtained in step 4).

[0019] Furthermore, the hole transport layer is one or more p-type semiconductor materials such as nickel oxide (NiO), molybdenum oxide (MoO3), cuprous oxide (Cu2O), copper iodide (CuI), copper phthalocyanine (CuPc), cuprous thiocyanate (CuSCN), reduced graphene oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), poly(3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), 4-butyl-N,N-diphenylaniline homopolymer (Poly-TPD), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (PACz) and its derivatives, and polyvinylcarbazole (PVK).

[0020] Furthermore, the electron transport layer can be made of fullerene (C 60 C 70 (e.g., titanium oxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), vanadium oxide (V2O5), zinc tin oxide (Zn2SnO4), zinc selenide (SnSe) and other one or more n-type semiconductor materials.)

[0021] Furthermore, the electron blocking layer is molybdenum oxide (MoO), molybdenum sulfide (MoS), lithium fluoride (LiF), aluminum oxide (Al2O3), etc.

[0022] Furthermore, the hole-blocking layer is copper bath (BCP), titanium tetrachloride (TiCl), titanium tetraisopropoxide (Ti(iPO)4), tin oxide (SnO), etc.

[0023] Furthermore, the method for depositing the perovskite layer is spin coating, blade coating, slot coating, spray coating, or screen printing.

[0024] Further, step 3) specifically involves spin-coating the perovskite precursor solution onto the prepared substrate at a rotation speed of 5000 rpm for 50 seconds, then annealing the substrate on a hot plate at 60-80℃ for 2 minutes, and immediately transferring it to a hot plate at 100-150℃ for annealing for 30 minutes.

[0025] The present invention also provides a perovskite solar cell, comprising a perovskite layer prepared using a perovskite precursor solution as described above. This perovskite layer is not limited by the structure of photovoltaic devices and can be used as an active layer in perovskite solar cells of any structure.

[0026] The present invention also provides a perovskite optoelectronic device, including a perovskite layer, which is prepared by the perovskite precursor solution as described above. The perovskite layer is not limited by the structure of the optoelectronic device and can be used as an active layer in photodetectors, light-emitting diodes, and semiconductor lasers of any structure.

[0027] Due to the adoption of the above technologies, the significant advantages of this invention compared with the prior art are as follows:

[0028] 1) This invention solves the problem of water and oxygen damaging components during the liquid-solid transition process in the solution preparation of perovskite thin films by introducing dimethylamine formic acid and other ionic liquids into the precursor solution, which is of great significance for promoting the practical application of perovskite batteries.

[0029] 2) The innovative use of a mixture of ionic liquid and polar aprotic solvent as a precursor solvent enabled the preparation of high-quality perovskite thin films in air and the acquisition of high-efficiency perovskite solar cells. Formic acid can inhibit the deprotonation of organic cations in the precursor solution, and dimethylamine can inhibit the oxidation of halide ions by oxygen in the precursor solution. The addition of polar aprotic solvent enabled the dissolution of the precursor solid powder and the crystallization of subsequent steps. Attached Figure Description

[0030] Figure 1 This is a SEM image of the interface of the perovskite solar cell in this invention;

[0031] Figure 2 For comparison with Example 1, XRD patterns of grazing incidence at different angles;

[0032] Figure 3 Here are the grazing incidence XRD patterns of Example 3 at different angles;

[0033] Figure 4 The photoluminescence curves of the thin films prepared in Examples 1-3 and Comparative Example 1 are shown.

[0034] Figure 5 The electroluminescence curves are those of the thin films prepared in Example 3 and Comparative Example 1.

[0035] Figure 6 This is a graph showing the photoluminescence stability of the perovskite thin film prepared in Comparative Example 1;

[0036] Figure 7 The graph shows the photoluminescence stability of the perovskite thin film prepared in Comparative Example 3. Detailed Implementation

[0037] To better understand the present invention, the following detailed description is provided in conjunction with specific embodiments. These embodiments are used to illustrate the main reactions and basic features of the present invention and are not limited to the following embodiments. The implementation conditions used in the embodiments can be further adjusted according to specific requirements. Implementation conditions not specified are generally those in conventional experiments.

[0038] The present invention will be further described below with reference to the embodiments.

[0039] Example 1

[0040] The specific fabrication process of using perovskite precursor solution to prepare pin-structured perovskite solar cells is as follows:

[0041] 1) Preparation of lead-based perovskite precursor solution with a band gap of 1.55 eV: The specific composition is 0.48 mmol methylamine chloride, 1.6 mmol lead iodide, 0.03 mmol lead bromide, 0.05 mmol cesium iodide, and 1.5 mmol formamidinium iodide, dissolved in a mixed solution of 800 μL dimethylformamide and 200 μL dimethyl sulfoxide. After dissolution, 5.4 μL dimethylaminoformic acid (4% molar content of ionic liquid) is added and stirred until homogeneous.

[0042] 2) A layer of carbazole derivative Me-4PACz ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid) was prepared on a cleaned ITO glass substrate;

[0043] 3) Deposit a layer of perovskite in air using the spin-coating anti-solvent method: Spin-coat the perovskite precursor solution onto the prepared substrate at a speed of 5000 rpm for 50 s. Then, place the substrate on an 80°C hot stage for annealing for 2 min, and immediately transfer it to a 100°C hot stage for annealing for 30 min to obtain a high-quality perovskite film.

[0044] 4) A fullerene (C60) layer with a thickness of approximately 25 nm was prepared by thermal evaporation as an electron transport layer;

[0045] 5) Using thermal evaporation at C 60 A layer of copper bath (BCP) with a thickness of 5 nm was grown on it;

[0046] 6) The electrode is made of Ag by thermal evaporation, with a thickness of 120 nm.

[0047] Figure 1 The SEM cross-sectional view of the lead-based perovskite solar cell prepared in this embodiment and the corresponding device structure are shown.

[0048] Example 2

[0049] In Example 2, 2.7 μL of dimethylaminoformic acid (2% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 1.

[0050] Example 3

[0051] In Example 2, 1.35 μL of dimethylaminoformic acid (1% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 1.

[0052] Example 4

[0053] In Example 4, a lead-tin mixed perovskite precursor with a band gap of 1.28 eV was used. Specifically, it consisted of 0.18 mmol methylamine chloride, 1.08 mmol lead iodide, 0.45 mmol methylamine iodide, 0.72 mmol stannous iodide, and 1.35 mmol formamidinium iodide, dissolved in a mixed solution of 800 μL dimethylformamide and 200 μL dimethyl sulfoxide. After dissolution, 6.5 μL dimethylaminoformic acid (4% molar content of ionic liquid) was added. The remaining steps were the same as in Example 1.

[0054] Example 5

[0055] In Example 5, 3.2 μL of dimethylaminoformic acid (2% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 4.

[0056] Example 6

[0057] In Example 6, a wide-bandgap perovskite precursor with a bandgap of 1.65 eV was used. Specifically, it consisted of 0.07 mmol methylamine chloride, 0.35 mmol cesium iodide, 0.21 mmol lead bromide, 1.05 mmol formamidinium iodide, and 1.19 mmol lead iodide, dissolved in a mixed solution of 800 μL dimethylformamide and 200 μL dimethyl sulfoxide. After dissolution, 5.0 μL dimethylaminoformic acid (4% molar content of ionic liquid) was added. The preparation steps were the same as in Example 1, and this perovskite preparation method can also be used for tandem photovoltaic devices based on other narrow-bandgap active materials.

[0058] Example 7

[0059] In Example 7, 2.5 μL of dimethylaminoformic acid (2% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 5.

[0060] Example 8

[0061] In Example 8, 1.3 μL of dimethylaminoformic acid (1% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 5.

[0062] Example 9

[0063] In Example 9, a wide-bandgap perovskite precursor with a bandgap of 1.68 eV was used. Specifically, it consisted of 0.07 mmol methylamine chloride, 0.28 mmol cesium iodide, 0.28 mmol lead bromide, 1.12 mmol formamidinium iodide, and 1.12 mmol lead iodide, dissolved in a mixed solution of 800 μL dimethylformamide and 200 μL dimethyl sulfoxide. After dissolution, 5.0 μL dimethylaminoformic acid (4% molar content of ionic liquid) was added. The preparation steps were the same as in Example 1, and this perovskite preparation method can also be used for tandem photovoltaic devices based on other narrow-bandgap active materials.

[0064] Example 10

[0065] In Example 10, 2.5 μL of dimethylaminoformic acid (2% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 9.

[0066] Example 11

[0067] In Example 11, 1.3 μL of dimethylaminoformic acid (1% molar content of ionic liquid) was added to the precursor solution and stirred until homogeneous. The remaining steps were the same as in Example 9.

[0068] Compare with Example 1

[0069] Lead-based perovskite with a band gap of 1.55 eV was used, and the specific preparation method was the same as in Example 1. The solvent used was DMF+DMSO, and no ionic liquid additives were used.

[0070] Compare with Example 2

[0071] 1) Prepare a lead-based perovskite precursor solution with a band gap of 1.55 eV: The specific composition is 0.12 mmol methylamine chloride, 0.4 mmol lead iodide, 0.0075 mmol lead bromide, 0.0125 mmol cesium iodide, and 0.375 mmol formamidinium iodide, dissolved in 1 mL dimethylaminoformic acid and stirred until homogeneous;

[0072] 2) A layer of carbazole derivative Me-4PACZ ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid) was prepared on a cleaned ITO glass substrate;

[0073] 3) Deposit a layer of perovskite in air using spin-coating anti-solvent method: Spin-coat the perovskite precursor solution onto the prepared substrate at a speed of 4000 rpm for 50 s. Then, place the substrate on an 80°C hot stage for annealing for 2 min, and immediately transfer it to a 100°C hot stage for annealing for 30 min to obtain a high-quality perovskite film.

[0074] 4) A fullerene (C60) layer with a thickness of approximately 25 nm was prepared by thermal evaporation as an electron transport layer;

[0075] 5) Using thermal evaporation at C 60 A layer of copper bath (BCP) with a thickness of 5 nm was grown on it;

[0076] 6) The electrode is made of Ag by thermal evaporation, with a thickness of 120 nm.

[0077] Compare with Example 3

[0078] Lead-based perovskite with a band gap of 1.28 eV was used, and the specific preparation method was the same as that in Example 4. The solvent used was DMF+DMSO, without ionic liquid additives.

[0079] Compare with Example 4

[0080] Lead-based perovskite with a band gap of 1.65 eV was used, and the specific preparation method was the same as in Example 6. The solvent used was DMF+DMSO, and no ionic liquid additives were used.

[0081] Compare with Example 5

[0082] Lead-based perovskite with a band gap of 1.68 eV was used, and the specific preparation method was the same as in Example 9. The solvent used was DMF+DMSO, and there were no ionic liquid additives.

[0083] The photoelectric conversion performance data of the perovskite solar cells prepared in the above embodiments and comparative examples are listed in Table 1.

[0084] Example 12

[0085] Example 12 compares the grazing incidence diffraction patterns of the perovskite films prepared in Example 3 and Comparative Example 1, specifically the film products obtained in step 3 of Example 3 and Comparative Example 1. The diffraction pattern of the perovskite film in Example 3 is as follows: Figure 2 As shown, the diffraction pattern of the perovskite thin film in Comparative Example 1 is as follows: Figure 3As shown, grazing-incidence XRD was performed on perovskite films spin-coated in air. The incident angles were 0.6°, 0.9°, 1.2°, and 1.5°, with diffraction angles of 2θ ranging from 10° to 50° and X-ray wavelengths of 0.154 nm. In the control group without ionic liquid, numerous lead iodide diffraction peaks appeared near 2θ 12.6°, and the peak intensity remained unchanged despite increasing incident angle and X-ray penetration depth. This indicates that the lead iodide mainly occurs at the film-air interface. In the experimental group containing a mixture of ionic liquid and aprotic polar solvent, no indistinguishable lead iodide diffraction peaks were observed, and no other visible impurity diffraction peaks were present. This indicates that the ionic liquid successfully suppressed the deprotonation and volatilization of the cationic component, thereby suppressing the resulting point vacancy defects.

[0086] Example 13

[0087] Example 13 compares the photoluminescence results of the perovskite thin films prepared in Examples 1-3 and Comparative Example 1, specifically the thin film products obtained in step 3 of Examples 1-3 and Comparative Example 1. The comparison results are as follows: Figure 4 As shown. Unlike the substrates in Examples 1-3, this thin film was prepared on a cleaned electronic glass substrate. Photoluminescence efficiency testing was performed in an integrating sphere with a radius of approximately 120 mm, where the excitation wavelength was 405 nm and the equivalent excitation power was approximately 10 mW / cm². 2 .like Figure 4 As shown, the peak position of the photoluminescence curve of the perovskite thin film prepared after adding ionic liquid is shifted by 3-5 nm (from 819 nm to 815 nm), and the luminescence efficiency is significantly enhanced. In Control Example 1 without ionic liquid, the photoluminescence efficiency is 2.02%; in Control Example 3 with 1% ionic liquid molar content, the photoluminescence efficiency is 6.24%; in Control Example 2 with 2% ionic liquid molar content, the photoluminescence efficiency is 4.19%; and in Control Example 1 with 4% ionic liquid molar content, the photoluminescence efficiency is 2.85%. This indicates that ionic liquid additives can effectively improve the photoluminescence efficiency of the prepared perovskite thin film, and there is an optimal molar content, which is 1%.

[0088] Example 14

[0089] Example 14 compares the electroluminescence results of the perovskite devices prepared in Example 1 and Comparative Example 1, specifically the thin film products obtained in step 3 of Examples 1-3 and Comparative Example 1. The comparison results are as follows: Figure 5 As shown. Unlike Example 16, the sample in Example 17 is a complete solar cell device. Figure 5As shown, the electroluminescence efficiency of the perovskite solar cell prepared after adding ionic liquid is significantly higher than that of the control group, indicating that the device prepared in the experimental group has higher perovskite film quality and lower on-voltage loss.

[0090] Example 15

[0091] Example 15 compares the photoluminescence stability of the perovskite films prepared in Example 3 and Control Example 1, specifically the relationship between the emission peak position and intensity over time in Example 13. The photoluminescence stability measurement results of the sample prepared in Control Example 1 are as follows: Figure 6 As shown, the photoluminescence stability measurement results of the samples prepared in Example 3 are as follows: Figure 7 As shown. The preparation and measurement methods in Example 15 are the same as in Example 13. When measuring photoluminescence stability, the photoluminescence curve was scanned and recorded every minute. Comparison Figure 6 and Figure 7 The results show that the perovskite film described in Example 3 exhibits good photoluminescence stability after the addition of the ionic liquid. Within a 30-minute measurement period, the peak position and intensity of the emitted light remain essentially unchanged, demonstrating good stability. In contrast, the emission light curve of Control Example 1 shows a rapid decrease in intensity and a shift in peak position.

[0092] Table 1 Performance comparison results of each embodiment

[0093]

[0094]

[0095] As shown in Table 1, the strategy of using mixed additives in the perovskite precursor solution based on the present invention can achieve better photoelectric conversion efficiency and superior stability in perovskite solar cells. The results of Comparative Example 1 show that perovskite solar cells prepared using ionic liquids as additives exhibit better photoelectric conversion performance compared to using them as solvents. This indicates that a small amount of ionic liquid additive is sufficient to protect the physicochemical properties of the precursor solution, without requiring it to be used entirely as a solvent. Multiple comparative results demonstrate that the dimethylaminoformic acid-based ionic liquid additive in this invention is applicable to various perovskite components, exhibiting universality from narrow-bandgap perovskites to wide-bandgap perovskites. It is suitable for preparing perovskite thin films and battery devices in various scenarios, thus ensuring excellent battery performance. Furthermore, the preparation process of this invention is simple and low-cost, fully meeting commercialization requirements.

[0096] Specifically, the dimethylaminoformate ionic liquid additive provided by this invention exhibits an optimal range for its content in the precursor solution to enhance device performance, and this optimal range varies with the perovskite composition and bandgap. Specifically, for wide-bandgap perovskites with a cesium content greater than 1.65 eV, a higher content of 5% is required for the ionic liquid additive. For conventional lead-based perovskites with a bandgap of approximately 1.55 eV, the optimal additive content is approximately 1%. For lead-tin mixed perovskites with a bandgap of approximately 1.28 eV, due to the extreme sensitivity of the divalent tin component in the precursor to oxygen, device fabrication must be carried out in a nitrogen-gloved phase, and the optimal additive content is approximately 2%.

[0097] The above embodiments are merely illustrative of the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be construed as limiting the scope of protection of the present invention. All equivalent changes or modifications made based on the essence of the content of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A perovskite precursor solution for perovskite solar cells comprising ionic liquids and aprotic polar solvents, characterized in that, The specific components include: The solvent is a mixture of an ionic liquid and an aprotic polar solvent, wherein the ionic liquid is dimethylaminoformic acid, and the aprotic polar solvent is one or a combination of N,N-dimethylformamide and / or dimethyl sulfoxide and / or N-methylpyrrolidone and / or butyrolactone and / or acetonitrile; and the solute is uniformly dispersed in the solvent.

2. The perovskite precursor solution as described in claim 1, characterized in that, The mass ratio of the ionic liquid to the aprotic polar solvent is 0.1%-15%.

3. The perovskite precursor solution as described in claim 2, characterized in that, The aprotic polar solvent is selected from one or a combination of N,N-dimethylformamide and / or dimethyl sulfoxide and / or N-methylpyrrolidone and / or butyrolactone and / or acetonitrile, or in any proportion.

4. The perovskite precursor solution as described in claim 1, characterized in that, The solute is specifically one or more of lead iodide, lead bromide, lead chloride, tin iodide, tin bromide, tin chloride, tin fluoride, formamidine iodide, formamidine bromide, formamidine chloride, methylamine iodide, methylamine bromide, methylamine chloride, cesium iodide, cesium bromide, dimethylamine iodide, dimethylamine bromide, guanidine iodide, and guanidine bromide.

5. The perovskite precursor solution as described in claim 1, characterized in that, The concentration of the mixture of solute, ionic liquid, and aprotic polar solvent is 0.1M-3M.

6. A method for preparing perovskite solar cells using the perovskite precursor solution according to any one of claims 1-5, characterized in that, The specific steps are as follows: 1) The solute is mixed uniformly with a mixture of an ionic liquid and an aprotic polar solvent to obtain a perovskite precursor solution; 2) Prepare a hole transport layer on a clean conductive glass substrate; 3) Deposit a perovskite layer using the perovskite precursor solution prepared in step 1) on the layer obtained in step 2); 4) Fabrication of an electron transport layer on the perovskite layer; 5) Fabricate a hole-blocking layer on the electron transport layer; 6) Prepare a back electrode layer on the layer obtained in step 6).

7. The method as described in claim 6, characterized in that, The method for depositing the perovskite layer is spin coating, blade coating, slot coating, spray coating, or screen printing.

8. The method as described in claim 6, characterized in that, Step 3) specifically involves spin-coating the perovskite precursor solution onto the prepared substrate at a rotation speed of 5000 rpm for 50 seconds. The substrate is then annealed on a hot plate at 60-80°C for 2 minutes, and immediately transferred to a hot plate at 100-150°C for 30 minutes.

9. A perovskite solar cell, comprising a perovskite layer, characterized in that, The perovskite layer is prepared using the perovskite precursor solution according to any one of claims 1-5.

10. A perovskite optoelectronic device, comprising a perovskite layer, characterized in that, The perovskite layer is prepared using the perovskite precursor solution according to any one of claims 1-5.

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