像素电路及其驱动方法、显示装置
By adding an oxide semiconductor anti-leakage transistor between the gate of the driving transistor and the initialization transistor and compensation transistor, the problem of gate voltage variation caused by leakage current of low-temperature polycrystalline silicon thin film transistors is solved, achieving the effect of low power consumption and low frequency display, and supporting narrow bezel design.
CN117542318BActive Publication Date: 2026-07-17WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
- Filing Date
- 2020-07-15
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the prior art, the leakage current of low-temperature polycrystalline silicon thin-film transistors is relatively large, which causes the gate voltage of the driving transistor to change during low-frequency display, resulting in flickering problems.
Method used
Leakage protection transistors are added between the gate of the driving transistor and the initialization transistor, and between the gate of the driving transistor and the compensation transistor. The leakage protection transistors use an active layer with oxide semiconductor to suppress potential changes by utilizing its low leakage characteristics.
Benefits of technology
It effectively reduces power consumption, improves low-frequency display performance, avoids flickering, and enables a narrow bezel design.
✦ Generated by Eureka AI based on patent content.
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Figure CN117542318B_ABST
Abstract
本申请提供一种像素电路及其驱动方法、显示装置，通过在驱动晶体管的栅极和初始化晶体管之间、驱动晶体管的栅极和补偿晶体管之间增设防漏电晶体管，防漏电晶体管包括具有氧化物半导体的有源层，利用金属氧化物晶体管的低漏电特性以抑制发光二极管发光过程中驱动晶体管的栅极的电位变化，防止初始化晶体管以及补偿晶体管出现漏电，有利于降低功耗和低频显示。
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