Stress cone and high voltage connector

Abstract

The embodiment of the application provides a stress cone and a high-voltage connector, and belongs to the technical field of high-voltage connection structures, wherein the stress cone comprises a body part with a through hole, the through hole is used for penetrating through a cable and covering the cable, the body part comprises an insulating part and a semi-conductive part, the insulating part is located at one end of the semi-conductive part along the axial direction of the through hole and is connected with the semi-conductive part; on the cross section of the axial line of the through hole, the connecting surface of the insulating part and the semi-conductive part comprises connected first and second curve segments, the first and second curve segments are sequentially arranged in the direction from the semi-conductive part to the insulating part, the first and second curve segments are gradually arranged away from the through hole, and the curvature radius of the first curve segment is greater than that of the second curve segment. The stress cone and the high-voltage connector provided by the embodiment of the application aim to improve the electric field line trend of the cable end, relieve the concentrated electric field and reduce the probability of local discharge breakdown.

Description

Technical Field

[0001] This application belongs to the field of high-voltage connection structure technology, specifically relating to a stress cone and a high-voltage connector. Background Technology

[0002] The function of a stress cone is to improve the electric field distribution at the end of the metal sheath and reduce the electric field strength at the edge of the metal sheath. In cable terminals and joints, a component that forms a transition cone surface between the edge of the metal sheath and the outer surface of the additional insulation by wrapping insulation tape (or using pre-made rubber and plastic components) from the edge of the metal sheath is called a stress cone.

[0003] Stress cones typically consist of a semi-conductive part and an insulating part. When high-voltage cables enter the end of high-voltage connectors, the insulation and shielding layers need to be removed to expose the internal metal. As a result, the exposed part of the cable is prone to generating messy electric field lines during operation, causing the electric field to concentrate in some locations and making it easy to cause partial discharge breakdown. Therefore, in use, the semi-conductive part of the stress cone needs to be fitted over the junction between the part with external insulation shielding and the exposed metal in the high-voltage cable to serve as a transition, while the insulating part is fitted over the exposed metal to serve as insulation shielding.

[0004] However, the stress cone of the relevant metal does not limit the interface between the semiconducting part and the insulating part, which makes the electric field distribution of the high-voltage cable more concentrated, easily causing electric stress concentration and partial discharge breakdown. Summary of the Invention

[0005] The technical problem to be solved by this application is to provide a stress cone and high-voltage connector that can improve the electric field line trend at the cable end, alleviate the concentrated electric field, and reduce the probability of partial discharge breakdown.

[0006] In a first aspect, embodiments of this application provide a stress cone, including a body portion having a through hole for passing through and covering a cable. The body portion includes an insulating portion and a semi-conductive portion. The insulating portion is located at one end of the semi-conductive portion along the axial direction of the through hole and is connected to the semi-conductive portion. On a cross-section through the axis of the through hole, the connection surface between the insulating portion and the semi-conductive portion includes a first curved segment and a second curved segment connected to each other. Along the direction from the semi-conductive portion to the insulating portion, the first curved segment and the second curved segment are arranged sequentially, and the first curved segment and the second curved segment are gradually moved away from the through hole. The radius of curvature of the first curved segment is greater than the radius of curvature of the second curved segment.

[0007] According to one embodiment of the first aspect of this application, the ratio of the radius of curvature of the first curve segment to the radius of curvature of the second curve segment is 13 to 16.

[0008] According to one embodiment of the first aspect of this application, the radius of curvature of the first curve segment is R1, then 80mm≦R1≦120mm.

[0009] According to one embodiment of the first aspect of this application, the radius of curvature R1 of the first curve segment is 100 mm.

[0010] According to one embodiment of the first aspect of this application, the radius of curvature of the second curve segment is R2, then 4mm≦R2≦8mm.

[0011] According to an embodiment of the first aspect of this application, the connection surface between the insulating portion and the semiconductive portion further includes a straight segment, which is located at one end of the first curved segment away from the second curved segment and is connected to the first curved segment; the straight segment is perpendicular to the axial direction of the through hole.

[0012] According to an embodiment of the first aspect of this application, the radial dimension of the straight segment along the through hole is D, then 0.5mm≦D≦1mm.

[0013] According to one embodiment of the first aspect of this application, the surface where the semiconductive portion connects to the insulating portion is a frosted surface.

[0014] According to an embodiment of the first aspect of this application, the insulating portion includes a first surface near the through hole and a second surface opposite to the first surface along the radial direction of the through hole, and the semiconductive portion includes a third surface near the through hole and a fourth surface opposite to the third surface along the radial direction of the through hole; the first surface is connected to the third surface, the second surface is connected to the fourth surface, the first surface and the third surface have the same dimension along the radial direction of the through hole, and the second surface and the fourth surface have the same dimension along the radial direction of the through hole.

[0015] Secondly, embodiments of this application also provide a high-pressure connector, including a stress cone as provided in any embodiment of the first aspect of this application.

[0016] The beneficial effects of this application are that by setting the connection surface between the insulating part and the semiconductive part to include a first curved segment and a second curved segment connected to each other, and the first and second curved segments are gradually set away from the through hole, the radius of curvature of the first curved segment is greater than that of the second curved segment. In this way, at the end of the high-voltage cable, the distribution and direction of the electric field lines can be improved by using the first curved segment with a larger radius of curvature, reducing the possibility of electric field stress concentration at the site. At the same time, the second curved segment with a smaller radius of curvature can improve the distribution of electric field stress at the edge of the stress cone, transferring the electric field stress concentration point to the inside of the stress cone, so that the electric field stress concentration point is far away from the weak point of the stress cone, reducing the possibility of partial discharge breakdown caused by electric field stress concentration at the weak point of the stress cone, and thus improving reliability. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a cross-sectional view of the stress cone provided in the first aspect embodiment of this application;

[0019] Figure 2 yes Figure 1 An enlarged view of part A in the stress cone shown;

[0020] Figure 3 This is a schematic diagram of the electric field stress distribution on a stress cone that does not have a second curve segment in related technologies;

[0021] Figure 4 This is a schematic diagram of the distribution of electric field stress when the radius of curvature of the second curve segment in the stress cone is 4 mm, according to the first aspect embodiment of this application.

[0022] Figure 5 This is a schematic diagram of the distribution of electric field stress when the radius of curvature of the second curve segment in the stress cone is 6 mm, according to the first aspect embodiment of this application.

[0023] Figure 6 This is a schematic diagram of the distribution of electric field stress in the second curved segment of the stress cone provided in the first aspect embodiment of this application when the radius of curvature is 8 mm.

[0024] In the figure, 100 is the stress cone; 10 is the body part; 11 is the through hole; 12 is the insulating part; 121 is the first surface; 122 is the second surface; 13 is the semi-conductive part; 131 is the third surface; 132 is the fourth surface; 101 is the first curved segment; 102 is the second curved segment; and 103 is the straight segment. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in the description of this application is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms "comprising" and "having," and any variations thereof, in the description, claims, and accompanying drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the description, claims, or accompanying drawings of this application are used to distinguish different objects, not to describe a specific order or hierarchy.

[0027] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0028] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "attachment" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] In this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, in this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0030] In this application, "multiple" refers to two or more (including two), and similarly, "multiple groups" refers to two or more (including two), and "multiple pieces" refers to two or more (including two).

[0031] Figure 1 This is a cross-sectional view of the stress cone provided in the first aspect embodiment of this application; Figure 2 yes Figure 1 An enlarged view of part A in the stress cone shown.

[0032] like Figure 1 and Figure 2As shown, this application embodiment provides a stress cone 100, including a body portion 10 with a through hole 11 for passing through and covering a cable. The body portion 10 includes an insulating portion 12 and a semi-conductive portion 13. The insulating portion 12 is located at one end of the semi-conductive portion 13 along the axial direction of the through hole and is connected to the semi-conductive portion 13. On a cross-section through the axis of the through hole 11, the connection surface between the insulating portion 12 and the semi-conductive portion 13 includes a first curved segment 101 and a second curved segment 102 connected to each other. Along the direction from the semi-conductive portion 13 to the insulating portion 12, the first curved segment 101 and the second curved segment 102 are arranged sequentially, and the first curved segment 101 and the second curved segment 102 are gradually moved away from the through hole 11. The radius of curvature of the first curved segment 101 is greater than the radius of curvature of the second curved segment 102.

[0033] Stress cone 100 is usually set at the end of high-voltage cable, that is, at the section where the high-voltage cable is transferred through high-voltage connector. Because the high-voltage cable has a section, the electric field distribution of the high-voltage cable at this point is relatively messy, and it is very easy to generate a concentrated electric field. When the electric stress of the concentrated electric field is concentrated in the weak part of the cable, it is easy to cause partial discharge and breakdown.

[0034] The function of the stress cone 100 is to improve the electric field curve at the end of the high-voltage cable, improve the electric field distribution of the high-voltage cable, reduce the concentration of electric stress, and thus reduce the probability of partial discharge.

[0035] The body portion 10 has a through hole 11, meaning that the body portion 10 has a hole that penetrates itself. During the application of the stress cone 100, this through hole 11 is used for the passage of high-voltage cables. The through hole 11 is used to pass through and cover the cable, meaning that at the end of the high-voltage cable, the high-voltage cable passes through the through hole 11 axially, so that the radially outer surface of the high-voltage cable abuts against the inner surface of the through hole 11. After the axial end of the high-voltage cable passes through the through hole 11, it can still be electrically connected to other structures in the high-voltage connector to realize the transmission of current.

[0036] It should be noted that in these embodiments of this application, at the end of the high-voltage cable, the insulation and shielding of the high-voltage cable need to be stripped to facilitate electrical connection between the high-voltage cable and other components in the high-voltage connector. In this way, at least a portion of the stress cone 100 should be located at the junction of the insulated and shielded portion of the high-voltage cable and the exposed metal wire to improve the distribution of electric field lines at this location and alleviate the concentration of electrical stress.

[0037] In these embodiments of the present application, the body portion 10 includes an insulating portion 12 and a semi-conductive portion 13. The semi-conductive portion 13 is disposed at the junction of the insulating and shielding portion and the bare metal wire in the high-voltage cable to serve as a transition and alleviate the phenomenon that the electric field lines become messy at this point. The insulating portion 12 is disposed at the bare metal portion in the high-voltage cable to serve as an insulating and shielding portion.

[0038] The insulating part 12 is located at one end of the semi-conductive part 13 along the axial direction of the through hole 11. That is, the insulating part 12 and the semi-conductive part 13 are arranged along the axial direction of the through hole 11 so that when the high-voltage cable passes through the stress cone 100 along the axial direction of the through hole 11, it passes through the semi-conductive part 13 and the insulating part 12 in sequence. In this way, the electric field lines of the high-voltage cable during operation can be gradually guided and diffused by the semi-conductive part 13, reducing the concentration of electric field lines.

[0039] The insulating portion 12 is connected to the semi-conductive portion 13. In some embodiments, the insulating portion 12 and the semi-conductive portion 13 are directly connected during molding. In some embodiments, the insulating portion 12 and the semi-conductive portion 13 can also be molded separately using two different molds, and then the insulating portion 12 and the semi-conductive portion 13 are bonded together.

[0040] For example, in some embodiments, one of the insulating portion 12 and the semiconductive portion 13 may be vulcanized in a mold first, and then the vulcanized portion may be used as part of the mold cavity to mold the other portion, so as to form a stable connection with the former during the vulcanization of the other portion.

[0041] The cross-section passing through the axis of the through hole 11 refers to a virtual plane that is parallel to the axis of the through hole 11, and the axis of the through hole 11 lies on this plane. In these embodiments of the present application, there are theoretically an infinite number of such virtual planes, and the stress cone 100 has the same cross-sectional shape on all of these infinite number of cross-sections.

[0042] The connection surface between the insulating portion 12 and the semiconducting portion 13 refers to the surface of the insulating portion 12 used for connection with the semiconducting portion 13, or the surface of the semiconducting portion 13 used for connection with the insulating portion 12. In these embodiments of the present application, the shapes of the aforementioned two surfaces should match to allow a natural transition between the insulating portion 12 and the semiconducting portion 13, increasing the consistency between the insulating portion 12 and the semiconducting portion 13 while also improving the orientation of the electric field lines.

[0043] Based on this, the connection surface between the insulating portion 12 and the semiconducting portion 13 includes a first curved segment 101 and a second curved segment 102 that are connected. This means that the surface of the insulating portion 12 used for connection with the semiconducting portion 13 includes the first curved segment 101 and the second curved segment 102 that are connected; and the surface of the semiconducting portion 13 used for connection with the insulating portion 12 includes the first curved segment 101 and the second curved segment 102 that are connected. Specifically, the first curved segment 101 of the insulating portion 12 matches the first curved segment 101 of the semiconducting portion 13, and the second curved segment 102 of the insulating portion 12 matches the second curved segment 102 of the semiconducting portion 13.

[0044] Along the direction from the semiconductive portion 13 to the insulating portion 12, the first curved segment 101 and the second curved segment 102 are arranged sequentially. The first curved segment 101 and the second curved segment 102 are arranged to gradually move away from the through hole 11. This means that the first curved segment 101 is arranged closer to the semiconductive portion 13, and the end of the first curved segment 101 that is closer to the semiconductive portion 13 is arranged close to the through hole 11; the second curved segment 102 is arranged closer to the insulating portion 12, and the end of the second curved segment 102 that is closer to the insulating portion 12 is arranged close to the outer surface of the stress cone 100.

[0045] The first curved segment 101 and the second curved segment 102 are gradually moved away from the through hole 11. This means that the first curved segment 101 maintains a fixed radius of curvature, and the center of the first curved segment 101 is located on the side of the first curved segment 101 away from the through hole 11; the second curved segment 102 maintains a fixed radius of curvature, and the center of the second curved segment 102 is located on the side of the second curved segment 102 away from the through hole 11.

[0046] The radius of curvature of the first curve segment 101 is greater than that of the second curve segment 102. That is, the curvature of the first curve segment 101 is gentler than that of the second curve segment 102. In this way, the first curve segment 101 can be used to straighten the messy electric field lines at the end of the high-voltage cable, so that the direction of the electric field lines in the part of the high-voltage cable where the insulation and shield have been stripped will not change too much. They can gradually diffuse from the axial direction to the radial direction, thereby reducing the concentration of electric field lines and lowering the probability of partial discharge breakdown caused by electric stress concentration, resulting in better reliability.

[0047] Meanwhile, the second curve segment 102 is configured to have a smaller radius of curvature. Specifically, in the part of the connection surface between the insulating part 12 and the semiconductive part 13 near the outer layer of the stress cone 100, the curvature of the connection surface corresponding to the second curve segment 102 is increased. This can reduce the probability of electric field lines concentrating on the outer surface of the stress cone 100, transfer the electric field stress from the outer surface of the stress cone 100 to the interior of the stress cone 100, reduce the probability of partial discharge breakdown on the outer surface of the stress cone 100, and improve reliability.

[0048] According to the stress cone 100 of this application embodiment, the connection surface between the insulating part 12 and the semiconductive part 13 includes a first curved segment 101 and a second curved segment 102 connected to each other. The first curved segment 101 and the second curved segment 102 are gradually disposed away from the through hole 11. The radius of curvature of the first curved segment 101 is larger than that of the second curved segment 102. Thus, at the end of the high-voltage cable, the distribution and direction of the electric field lines can be improved by using the first curved segment 101 with a larger radius of curvature, reducing the possibility of electric field stress concentration at the site. At the same time, the second curved segment 102 with a smaller radius of curvature can improve the distribution of electric field stress at the edge of the stress cone 100, transferring the electric field stress concentration point to the inside of the stress cone, so that the electric field stress concentration point is far away from the weak point of the stress cone 100, reducing the possibility of partial discharge breakdown caused by electric field stress concentration at the weak point of the stress cone 100, and thus improving reliability.

[0049] According to one embodiment of the first aspect of this application, the ratio of the radius of curvature of the first curve segment 101 to the radius of curvature of the second curve segment 102 is 13 to 16.

[0050] In these embodiments of the present application, by setting the ratio of the radius of curvature of the first curve segment 101 to the radius of curvature of the second curve segment 102 to 13 to 16, the first curve segment 101 and the second curve segment 102 can transition naturally, thereby improving the adhesion of the electric field lines to the connection surface between the insulating portion 12 and the semiconducting portion 13.

[0051] In some embodiments, if the ratio of the radius of curvature of the first curve segment 101 to the radius of curvature of the second curve segment 102 is set too small, it is easy to cause the second curve segment 102 to be too long in the axial direction of the through hole 11, which in turn causes the stress cone 100 as a whole to be too long in the axial direction of the through hole 11, affecting the efficiency of high-voltage cable passage during assembly; on the other hand, if the ratio of the radius of curvature of the first curve segment 101 to the radius of curvature of the second curve segment 102 is set too large, it is easy to cause the angle at the connection between the first curve segment 101 and the second curve segment 102 to be too large, which affects the effect of electric field lines being transmitted along the connection surface between the insulating part 12 and the semiconducting part 13, causing the electric field lines to deviate at the position of excessive angle, which poses a risk of electric field line concentration, and thus leads to a decrease in reliability.

[0052] In these embodiments of the present application, by setting the ratio of the radius of curvature of the first curve segment 101 to the radius of curvature of the second curve segment 102 to 13 to 16, a natural transition can be achieved between the first curve segment 101 and the second curve segment 102, thereby improving the adhesion of the electric field lines to the connection surface between the insulating portion 12 and the semiconductive portion 13, and improving the reliability of the stress cone 100 while controlling the size of the stress cone 100.

[0053] According to an embodiment of the first aspect of this application, the radius of curvature of the first curve segment 101 is R1, then 80mm≦R1≦120mm.

[0054] In these embodiments of this application, the radius of curvature of the first curve segment 101 is R1, that is, the value of R1 is related to the degree of curvature of the first curve segment 101. The larger the value of R1, the larger the radius of curvature and the smaller the curvature of the first curve segment 101, and the gentler the curvature of the first curve segment 101.

[0055] In these embodiments of this application, the first curve segment 101 needs to be set to be relatively gentle in order to straighten the messy electric field lines at the end of the high-voltage cable. The embodiments of this application provide the following experimental examples to obtain a better value for the radius of curvature of the first curve segment 101, as shown in the table below:

[0056] Experimental Example 1 60 5.00 48.2 Experimental Example 2 80 4.44 57.4 Experiment Example 3 100 4.01 65.3 Experiment Example 4 120 3.65 72.2 Experimental Example 5 140 3.55 78.7

[0057] As shown in the table, when the radius of curvature of the first curve segment 101 is less than 80mm, the electric field strength is too large, which can easily lead to partial discharge or even breakdown. When the radius of curvature of the first curve segment 101 is greater than 120, the decrease in electric field strength is small, and the curve length of the first curve segment 101 will increase, which in turn leads to an increase in the size of the product.

[0058] Based on this, in these embodiments of the present application, by limiting the value of R1 to 80mm≦R1≦120mm, the degree of bending of the first curve segment 101 is limited, thereby reducing the electric field strength of the high-voltage cable acting on the stress cone 100 without making the product length too large.

[0059] According to one embodiment of the first aspect of this application, the radius of curvature R1 of the first curved segment 101 is 100 mm. In these embodiments of this application, by limiting the radius of curvature R1 of the first curved segment 101 to 100 mm, as shown in the aforementioned table, the electric field strength of the high-voltage cable under the power frequency withstand voltage can be reduced by the first curved segment 101, while its own size will not be too long, which facilitates the installation of the stress cone 100.

[0060] For example, in these embodiments of the present application, the radius of curvature R1 of the first curve segment 101 may be set to 85mm, 90mm, 95mm, 105mm, 110mm or 115mm.

[0061] According to one embodiment of the first aspect of this application, the radius of curvature of the second curve segment 102 is R2, then 4mm≦R2≦8mm.

[0062] In these embodiments of this application, the radius of curvature of the second curve segment 102 is R2, that is, the value of R2 is related to the degree of curvature of the second curve segment 102. The larger the value of R2, the larger the radius of curvature and the smaller the curvature of the second curve segment 102, and the gentler the curvature of the second curve segment 102.

[0063] In these embodiments of the present application, it is necessary to set the second curve segment 102 to have a large curvature in order to improve the electrical stress distribution at the connection surface between the insulating portion 12 and the semiconductive portion 13 near the outer surface of the stress cone 100.

[0064] Figure 3 This is a schematic diagram of the electric field stress distribution on a stress cone that does not have a second curve segment in related technologies; Figure 4 This is a schematic diagram of the distribution of electric field stress when the radius of curvature of the second curve segment in the stress cone is 4 mm, according to the first aspect embodiment of this application. Figure 5 This is a schematic diagram of the distribution of electric field stress when the radius of curvature of the second curve segment in the stress cone is 6 mm, according to the first aspect embodiment of this application. Figure 6 This is a schematic diagram of the distribution of electric field stress in the second curved segment of the stress cone provided in the first aspect embodiment of this application when the radius of curvature is 8 mm.

[0065] Please refer to the following for details. Figure 3 It can be seen that when the connection surface between the insulating part 12 and the semiconducting part 13 is not provided with the second curve segment 102, the electric field stress is mainly concentrated on the outer surface of the stress cone 100 away from the through hole 11. As a result, because the outer surface structure of the stress cone 100 away from the through hole 11 is relatively weak, when the electric field stress is concentrated here, partial discharge is likely to occur, and it may even cause the part to be broken down.

[0066] Please refer to the following for details. Figures 4 to 6 It can be seen that when the radius of curvature R2 of the second curve segment 102 is between 4mm and 6mm, the position of the electric field stress is obviously shifted from the outer surface of the stress cone 100 away from the through hole 11 to the inside of the stress cone 100. This allows the stress cone 100, which has a higher safety margin, to bear the electric field stress, reducing the probability of partial discharge or even breakdown, and thus improving reliability.

[0067] Based on this, in these embodiments of the present application, by setting the radius of curvature R2 of the second curve segment 102 to 4mm ≤ R2 ≤ 8mm, the specific location of the electric field stress acting on the stress cone 100 can be changed. In these embodiments of the present application, when the radius of curvature R2 of the second curve segment 102 is less than 4mm, the electric field is more concentrated, and the concentrated electric stress acts on the outer surface of the stress cone 100. However, when the radius of curvature R2 of the second curve segment 102 is greater than 8mm, the overall electric field strength of the stress cone increases significantly, posing a risk.

[0068] Based on this, according to one embodiment of the first aspect of this application, the radius of curvature R2 of the second curve segment can be set to 6mm. Exemplarily, in some embodiments, the radius of curvature of the second curve segment 102 can also be set to 5mm or 7mm.

[0069] According to an embodiment of the first aspect of this application, the connection surface between the insulating portion 12 and the semiconductive portion 13 further includes a straight segment 103, which is located at one end of the first curved segment 101 away from the second curved segment 102 and is connected to the first curved segment 101; the straight segment 103 is perpendicular to the axial direction of the through hole 11.

[0070] The straight segment 103 is the connection surface between the insulating portion 12 and the semi-conductive portion 13 near the through hole 11. In these embodiments of this application, the straight segment 103 facilitates a smooth transition between the interfaces of the two different materials, the insulating portion 12 and the semi-conductive portion 13, while also taking into account manufacturing and electric field improvement functions.

[0071] In other words, by setting the straight segment 103, the structural integrity of the first curved segment 101 can be improved, enabling the first curved segment 101 to achieve the aforementioned function of improving the electric field. If the straight segment 103 is not set, the first curved segment 101 extends directly to the inner surface of the stress cone 100 near the through hole 11. It is difficult to ensure the radius of curvature of the first curved segment 101 during molding. Furthermore, when the high-voltage cable passes through the through hole 11, it needs to be interference-fitted with the inner surface of the stress cone 100 corresponding to the through hole 11, which can easily cause the first curved segment 101 to deform under the extrusion action, thereby affecting the effect of the first curved segment 101 on improving the electric field.

[0072] In the embodiment where the insulating part 12 and the semi-conductive part 13 are vulcanized separately, by setting the straight segment 103, a step can be formed on the part of the semi-conductive part 13 near the through hole 11. Thus, in the process of connecting the insulating part 12 and the semi-conductive part 13, the step can be used to limit the insulating part 12 and cut the part of the insulating part 12 near the semi-conductive part 13, so that the insulating part 12 and the semi-conductive part 13 form a smooth transition, reducing the dimensional tolerance requirements of the insulating part 12 and improving production efficiency.

[0073] In an embodiment where one of the insulating portion 12 and the semi-conductive portion 13 is vulcanized first, and then the first-formed portion is used as part of the mold cavity to form the other, the straight segment 103 can also facilitate the stopping of the later-formed portion, so that the insulating portion 12 and the semi-conductive portion 13 can be integrally formed during the subsequent vulcanization process.

[0074] According to one embodiment of the first aspect of this application, the radial dimension of the straight segment along the through hole is D, then 0.5mm ≤ D ≤ 1mm. Exemplarily, in these embodiments of this application, the value of D may be set to 0.6mm, 0.7mm, 0.8mm or 0.9mm, but is not limited to.

[0075] According to an embodiment of the first aspect of this application, the surface where the semiconducting portion 13 connects to the insulating portion 12 is a frosted surface.

[0076] In these embodiments of this application, the semiconductive portion 13 and the insulating portion 12 can be selected to be vulcanized separately and then connected as a whole by adhesive bonding. In this way, setting the surface where the semiconductive portion 13 and the insulating portion 12 are connected to be a frosted surface can increase the connection area between the semiconductive portion 13 and the insulating portion 12, strengthen the connection effect between the semiconductive portion 13 and the insulating portion 12, and make the stress cone 100 achieve better consistency. In the embodiment where one of the insulating portion 12 and the semiconductive portion 13 is vulcanized first, and then the first-formed part is used as part of the mold cavity to form the other, the frosted surface can also be used to increase the contact area between the later-vulcanized part and the former, which can also make the connection strength between the insulating portion 12 and the semiconductive portion 13 higher and improve the consistency of the stress cone 100.

[0077] It should be noted that in some embodiments of this application, the surface of the insulating portion 12 connected to the semiconductive portion 13 may also be a frosted surface.

[0078] According to an embodiment of the first aspect of this application, the insulating portion 12 includes a first surface 121 near the through hole 11 and a second surface 122 that is radially opposite to the first surface 121 along the through hole 11, and the semiconductive portion 13 includes a third surface 131 near the through hole 11 and a fourth surface 132 that is radially opposite to the third surface 131 along the through hole 11; the first surface 121 is connected to the third surface 131, the second surface 122 is connected to the fourth surface 132, the first surface 121 and the third surface 131 have the same dimensions along the radial direction of the through hole 11, and the second surface 122 and the fourth surface 132 have the same dimensions along the radial direction of the through hole 11.

[0079] In these embodiments of this application, the insulating portion 12 includes a first surface 121 near the through hole 11, and the semi-conductive portion 13 includes a third surface 131 near the through hole 11. The first surface 121 and the third surface 131 are connected, and the first surface 121 and the third surface 131 have the same radial dimension along the through hole 11. That is, on the inner surface of the stress cone 100, the connecting portion of the insulating portion 12 and the semi-conductive portion 13 has the same radial dimension along the through hole 11. In this way, the insulating portion 12 and the semi-conductive portion 13 smoothly transition on the inner surface of the stress cone 100, which is beneficial to the uniform distribution of the electric field lines of the high-voltage cable.

[0080] Accordingly, in these embodiments of this application, the insulating portion 12 includes a second surface 122 that is radially opposite to the first surface 121 along the through hole 11, and the semiconductive portion 13 includes a fourth surface 132 that is radially opposite to the third surface 131 along the through hole 11. The second surface 122 and the fourth surface 132 are connected, and the second surface 122 and the fourth surface 132 have the same dimensions along the radial direction of the through hole 11. That is, on the outer surface of the stress cone 100, the connection portion of the insulating portion 12 and the semiconductive portion 13 has the same dimensions along the radial direction of the through hole 11, which also contributes to the uniform distribution of the electric field lines of the high-voltage cable.

[0081] It should be noted that in these embodiments of this application, the first surface 121, the second surface 122, the third surface 131 and the fourth surface 132 are all annular surfaces arranged around the axis of the through hole 11.

[0082] This application also provides a high-pressure connector, including a stress cone 100 as provided in any embodiment of the first aspect of this application.

[0083] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of protection of this application is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of one or more embodiments of this application as described above, which are not provided in detail for the sake of brevity.

[0084] One or more embodiments in this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of this application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of one or more embodiments in this application should be included within the protection scope of this application.

Claims

1. A stress cone (100), characterized in that, The device includes a body portion (10) having a through hole (11) for passing through and covering a cable. The body portion (10) includes an insulating portion (12) and a semi-conductive portion (13). The insulating portion (12) is located at one end of the semi-conductive portion (13) along the axial direction of the through hole (11) and is connected to the semi-conductive portion (13). On the cross section of the axis passing through the through hole (11), the connecting surface of the insulating part (12) and the semiconductive part (13) includes a first curved segment (101) and a second curved segment (102) connected to each other. Along the direction from the semiconductive part (13) to the insulating part (12), the first curved segment (101) and the second curved segment (102) are arranged in sequence. The first curved segment (101) and the second curved segment (102) are arranged to gradually move away from the through hole (11). The radius of curvature of the first curved segment (101) is greater than the radius of curvature of the second curved segment (102). The ratio of the radius of curvature of the first curved segment (101) to the radius of curvature of the second curved segment (102) is 13 to 16. The radius of curvature of the first curved segment (101) is R1, then 80mm≦R1≦120mm; The connection surface between the insulating part (12) and the semiconductive part (13) further includes a straight segment, which is located at one end of the first curved segment (101) away from the second curved segment (102) and is connected to the first curved segment (101). The straight segment is perpendicular to the axial direction of the through hole (11), and the radial dimension of the straight segment along the through hole (11) is D, then 0.5mm≦D≦1mm; The surface where the semiconductive part (13) connects to the insulating part (12) is frosted. The insulating portion (12) includes a first surface (121) near the through hole (11) and a second surface (122) that is radially opposite to the first surface (121) along the through hole (11). The semiconductive portion (13) includes a third surface (131) near the through hole (11) and a fourth surface (132) that is radially opposite to the third surface (131) along the through hole (11). The first surface (121) is connected to the third surface (131), and the second surface (122) is connected to the fourth surface (132). The first surface (121) and the third surface (131) have the same radial dimension along the through hole (11), and the second surface (122) and the fourth surface (132) have the same radial dimension along the through hole (11).

2. The stress cone (100) according to claim 1, characterized in that, The radius of curvature of the first curve segment (101) is R1 = 100 mm.

3. The stress cone (100) according to claim 1, characterized in that, The radius of curvature of the second curve segment (102) is R2, then 4mm≦R2≦8mm.

4. A high-voltage connector, characterized in that, Includes the stress cone (100) as described in any one of claims 1 to 3.

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