Process kit for a pvd chamber with a high deposition ring and a smaller diameter electrostatic chuck (ESC)

Abstract

Embodiments of a processing kit are provided herein. In some embodiments, a processing kit, comprising: a deposition ring configured to be disposed on a substrate support, the deposition ring including: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downwardly from the radially inner portion to the radially outer portion; an inner lip extending upwardly from the upper surface of the annular band and adjacent to an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outwardly and downwardly from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outwardly of the annular band; and an outer lip extending upwardly and disposed radially outwardly of the channel.

Description

Technical Field

[0001] The embodiments disclosed herein generally relate to substrate processing equipment. Background Technology

[0002] Processing kits can be used in physical vapor deposition (PVD) chambers to separate processing and non-processing volumes. Over time, the processing kit accumulates material deposited from the deposition processes performed within the PVD chamber. The processing kit may include a processing shield, deposition rings, cap rings, etc. For high-deposition processes, the deposit buildup on the deposition rings can significantly accumulate to the point where the deposit can reach the back side of the substrate. At this point, the deposit may adhere to or stick to the back side of the substrate, potentially causing substrate processing problems and leading to substrate breakage. Although the deposition rings can be removed and replaced with clean ones, the rapid accumulation of material deposited on the deposition rings results in more frequent downtime for replacement. The inventors have also observed that the deposition rings may become prone to cracking or breakage over time.

[0003] Therefore, the inventors have provided embodiments of the improved deposition ring as disclosed herein. Summary of the Invention

[0004] Embodiments of a processing kit are provided herein. In some embodiments, a processing kit includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular strip configured to rest on a lower flange of the substrate support, the annular strip having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upward from the upper surface of the annular strip and adjacent to the inner surface of the annular strip, wherein the inner surface of the inner lip and the inner surface of the annular strip together form a central opening of the deposition ring, and wherein the outer surface of the inner lip extends radially outward and downward from the upper surface of the inner lip to the upper surface of the annular strip; a channel disposed radially outward of the annular strip; and an outer lip extending upward and disposed radially outward of the channel, wherein the upper surface of the outer lip and the channel are disposed below the lower surface of the annular strip.

[0005] In some embodiments, a processing kit includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular strip configured to rest on a lower flange of the substrate, the annular strip having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upward from the upper surface of the annular strip and adjacent to the inner surface of the annular strip, wherein the inner surface of the inner lip and the inner surface of the annular strip together form a central opening of the deposition ring, wherein the outer surface of the inner lip extends from the central axis of the deposition ring at an angle of about 5 degrees to about 15 degrees; a first leg extending downward from the outer surface adjacent to the annular strip; a second leg extending radially outward from the bottom portion of the first leg; and an outer lip extending upward from the second leg, wherein the first leg, the second leg, and the outer lip together define a channel.

[0006] In some embodiments, a substrate support includes: a base having a substrate support surface having a given diameter for receiving a substrate and having an electrostatic chuck disposed therein, wherein the base includes a radially outwardly extending lower flange; and a processing kit including: a deposition ring disposed on the lower flange, the deposition ring including: an annular strip resting on the lower flange, the annular strip having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upward from the upper surface of the annular strip and adjacent to the inner surface of the annular strip, wherein an outer surface of the inner lip extends radially outward and downward from the upper surface of the inner lip to the upper surface of the annular strip; a channel disposed radially outward and below the annular strip; and an outer lip extending upward and disposed radially outward of the channel.

[0007] Other and further embodiments of this disclosure are described below. Attached Figure Description

[0008] The embodiments of this disclosure, which are briefly summarized above and discussed in more detail below, are understood by referring to the illustrative embodiments depicted in the accompanying drawings. However, the drawings only show typical embodiments of this disclosure and should therefore not be considered as limiting the scope, as other equivalent embodiments are permitted by this disclosure.

[0009] Figure 1 A schematic cross-sectional view of a processing chamber according to some embodiments of the present disclosure is depicted.

[0010] Figure 2 A cross-sectional view of a processing suite according to some embodiments of the present disclosure is depicted.

[0011] Figure 3 A cross-sectional view of a portion of a deposition ring according to some embodiments of the present disclosure is depicted.

[0012] Figure 4 A top isometric view of a deposition ring according to some embodiments of the present disclosure is depicted.

[0013] Figure 5 A schematic cross-sectional view of a deposition ring and fixture assembly according to some embodiments of the present disclosure is depicted.

[0014] Figure 6 A top view of a base and a deposition ring according to some embodiments of the present disclosure is depicted.

[0015] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously combined in other embodiments without further description. Detailed Implementation

[0016] This document provides embodiments of processing kits and processing chambers incorporating such processing kits. In some embodiments, the processing kit includes a one-piece processing kit shield and a high-deposition ring, as provided herein. The deposition ring advantageously allows for increased accumulation of deposited material on the deposition ring. As a result, the deposition ring can undergo more processing cycles before cleaning because the deposit does not adhere to the back side of the substrate being processed as quickly as with conventional deposition rings. The deposition ring may also have suitable wall thickness and profile to advantageously reduce or prevent cracking or breakage due to thermal cycling and / or accumulation of deposited material.

[0017] To further mitigate the problems associated with deposits adhering to the back side of the substrate, a clamping assembly can be provided to hold the deposition ring downwards if deposits on the deposition ring are to adhere to the back side of the substrate. As a result, because the clamping assembly prevents the deposition ring from being lifted, damage associated with the deposition ring being lifted by the substrate due to deposits adhering to the back side of the substrate is advantageously avoided.

[0018] Figure 1 A schematic cross-sectional view of a processing chamber 100 (e.g., a PVD chamber) having a processing kit shielding according to some embodiments of the present disclosure is depicted. Other processing chambers may also benefit from the apparatus of the present invention disclosed herein.

[0019] Processing chamber 100 includes chamber walls 106 surrounding an internal volume 108. Chamber walls 106 include side walls 116, a bottom wall 120, and a top plate 124. Processing chamber 100 may be a separate chamber or part of a multi-chamber platform (not shown) having an interconnected cluster of chambers connected by a substrate transport mechanism that transports substrates 104 between the chambers. Processing chamber 100 may be a PVD chamber capable of sputtering material onto substrate 104. Non-limiting examples of suitable materials for sputtering deposition include one or more of aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, tungsten nitride, etc.

[0020] Processing chamber 100 typically includes a substrate support 130, which includes a base 134 for supporting a substrate 104. The base 134 has a substrate support surface 138 having a plane substantially parallel to the sputtering surface 139 of a sputtering target 140 disposed in an upper section of the processing chamber 100. The substrate support surface 138 of the base 134 is designed to support a substrate 104 having a given width during processing. If the substrate 104 is circular, the width of the substrate 104 may be its diameter, or if the substrate is square / rectangular, the width of the substrate 104 may be its width. The substrate support surface 138 may have a given diameter, for example, from about 285 mm to about 293 mm. The given diameter of the substrate support surface 138 may be smaller than the given width of the substrate 104, such that the substrate includes an overhanging edge 114. The base 134 may include at least one of an electrostatic chuck or a heater (such as a resistance heater, heat exchanger, or other suitable heating device).

[0021] During operation, substrate 104 is introduced into processing chamber 100 through substrate loading inlet 142 in sidewall 116 of processing chamber 100 and placed on substrate support 130. Substrate support 130 can be raised or lowered by support lifting mechanism, and lifting finger assembly can be used to raise and lower substrate 104 onto substrate support 130 during placement of substrate 104 onto substrate support 130 by a robotic arm. Base 134 can be maintained at an electrically floating potential or grounded during plasma operation.

[0022] The processing chamber 100 also contains a processing kit 102, such as Figure 2As shown, the processing kit 102 includes various components that can be easily removed from the processing chamber 100, for example, to remove sputtering deposits from component surfaces, replace or repair corroded components, or adapt the processing chamber 100 for other processes. The processing kit 102 may include a one-piece shield 110. In some embodiments, the one-piece shield 110 includes a cylindrical body 126 with a diameter surrounding the sputtering surface 139 of the sputtering target 140 and a substrate support 130 (e.g., with a diameter larger than the sputtering surface 139 and larger than the support surface of the substrate support 130). The cylindrical body 126 has an upper portion 128 surrounding the outer edge of the sputtering surface 139 of the sputtering target 140 and a lower portion 132 surrounding the substrate support 130.

[0023] The upper portion 128 includes an adapter section 136 for supporting the one-piece shield 110 on the sidewall 116 and a cover ring section 122 for placement around the outer peripheral wall 112 of the substrate support 130. The processing kit 102 further includes a deposition ring (e.g., deposition ring 125) disposed below the cover ring section 122. The deposition ring 125 is located on the lower flange 135 of the substrate support 130. The bottom surface of the cover ring section 122 abuts against the deposition ring 125. In some embodiments, the distance between the substrate support surface 138 and the upper surface of the lower flange 135 is about 8 to about 11 mm. In some embodiments, the lower flange 135 has a thickness of about 10 mm to about 15 mm.

[0024] The deposition ring 125 includes an annular band 215 that extends around and surrounds the outer peripheral wall 112 of the substrate support 130, such as... Figure 2 and Figure 3 As shown. Figure 3 A cross-sectional view of a portion of a deposition ring 125 according to some embodiments of the present disclosure is depicted. The annular band 215 includes an upper surface 220 and a lower surface 226. The annular band 215 includes an inner surface 304 and an outer surface 306. In some embodiments, the distance from the inner surface 304 to the outer surface 306 is about 20.0 mm to about 26.0 mm. The upper surface 220 is generally flat and includes a horizontal portion. In some embodiments, the annular band 215 includes a first radius 310 at the interface between the outer surface 306 and the upper surface 220. In some embodiments, the annular band 215 includes a second radius 312 at the interface between the lower surface 226 and the inner surface 304.

[0025] The lower surface 226 of the annular band 215 includes a radially inner portion 322 and a radially outer portion 324, and a step 338 therebetween. The step 338 extends downward from the radially inner portion 322 to the radially outer portion 324. The radially inner portion 322 of the lower surface 226 is located on the lower flange 135 of the substrate support 130 when disposed on the lower flange 135 of the substrate support 130, while the radially outer portion 324 surrounds the lower flange 135. In some embodiments, the thickness of the annular band 215 from the upper surface 220 to the radially inner portion 322 of the lower surface 226 is from about 2.55 mm to about 3.0 mm. In some embodiments, the thickness of the annular band 215 from the upper surface 220 to the radially outer portion 324 of the lower surface 226 is from about 4.76 mm to about 5.0 mm. The thicker outer portion of the annular band 215 corresponding to the radially outer portion 324 advantageously provides additional support to the thinner inner portion of the annular band 215 corresponding to the radially inner portion 322, resulting in less cracking or breakage of the deposited ring 125.

[0026] In some embodiments, the diameter of the inner surface 304 of the inner lip 250 is from about 285 mm to about 295 mm. In some embodiments, the outer diameter of the deposition ring is from about 340 mm to about 380 mm. In some embodiments, the distance from the inner surface 304 of the annular band 215 to the step 338 (e.g., the radially inner portion 322) is from about 12.0 mm to about 15.0 mm. In some embodiments, the diameter of the step is from about 315 mm to about 345 mm.

[0027] An inner lip 250 extends upward from the upper surface 220 and is adjacent to the inner surface 304 of the annular band 215. The inner lip 250 is substantially parallel to the outer peripheral wall 112 of the substrate support 130, such that the inner surface 308 of the inner lip 250 and the inner surface 304 of the annular band 215 are aligned and together form a central opening of the deposition ring 125, the width of which is less than a given width of the substrate 104. The central opening defines the inner diameter of the deposition ring 125. In some embodiments, the inner diameter of the deposition ring 125 is approximately 285 to approximately 295 mm.

[0028] The inner lip 250 terminates directly below the overhanging edge 114 of the substrate 104. The inner lip 250 defines the inner periphery of the deposition ring 125, which surrounds the substrate support 130 to protect areas of the substrate support 130 not covered by the substrate 104 during processing. For example, the inner lip 250 surrounds and at least partially covers the outer peripheral wall 112 of the substrate support 130 (which will otherwise be exposed to the processing environment) to reduce or even completely eliminate sputtering deposit deposition on the outer peripheral wall 112. Advantageously, the deposition ring 125 can be easily removed to clean sputtering deposits from its exposed surfaces, allowing the substrate support 130 to be cleaned without disassembly. The deposition ring 125 can also be used to protect the exposed side surfaces of the substrate support 130 to reduce erosion by excited plasma material.

[0029] The inner lip 250 is advantageously narrow enough to reduce sputtered deposits on the outer surface 314 of the inner lip 250, but wide enough to reduce or prevent breakage or fracture of the deposition ring 125. The outer surface 314 of the inner lip 250 extends radially outward and downward from the upper surface 326 of the inner lip 250 to the upper surface 220 of the annular band 215 to reinforce the inner lip 250. The inventors have observed that the tapered outer surface 314 makes the deposition ring 125 less prone to breakage or fracture. In some embodiments, the outer surface 314 of the inner lip 250 extends from the central axis 370 of the deposition ring 125 at an angle 380 of about 5 degrees to about 15 degrees.

[0030] In some embodiments, the inner lip 250 has a width of about 1.0 mm to about 4.0 mm. In some embodiments, the upper surface 326 of the inner lip 250 has a width of about 1.0 mm to about 2.5 mm. In some embodiments, when the deposition ring 125 is disposed on the base 134, the upper surface 326 is about 0.1 mm to about 1.0 mm below the substrate support surface 138. In some embodiments, the outer surface 314 includes a radius 316 between the vertically extending portion of the outer surface 314 and the horizontally extending portion of the upper surface 220 of the annular band 215. The radius may advantageously be small to reduce sputtered deposits on the outer surface 314. In some embodiments, the radius is about 2.0 mm to about 3.0 mm. In some embodiments, the radius is about 2.4 mm to about 2.6 mm.

[0031] The deposition ring 125 further includes a first leg 210 extending downward from the outer surface 306 adjacent to the annular band 215. A second leg 260 extends radially outward from the bottom portion 320 of the first leg 210. An outer lip 214 extends upward from the second leg 260. The first leg 210, the second leg 260, and the outer lip 214 together define a channel 240 of the deposition ring 125. In some embodiments, the channel 240 is disposed below the lower surface 226 of the annular band 215. In some embodiments, the length of the first leg 210 is greater than the length of the inner lip 250.

[0032] In some embodiments, a depth 340 between the upper surface 220 of the annular band 215 and the upper surface 326 of the inner lip 250 is configured to accommodate a material deposition of at least about 6 mm or more. For example, the depth 340 may be between about 6.0 mm and about 12.0 mm. In some embodiments, the depth 340 may be between about 6.0 mm and about 9.0 mm. As a result, material deposits adhering to the back side of the overhanging edge 114 of the substrate 104 are significantly reduced or completely eliminated. In some embodiments, the distance between the upper surface 326 of the inner lip 250 and the substrate receiving surface of the base 134 is about 1.0 mm to about 2.0 mm. To accommodate a deposition ring 125 with a greater depth 340, the lower flange 135 is disposed further away from the substrate support surface 138. The upper surface of the deposition ring 125 includes the upper surface 326 of the inner lip 250, the outer surface 314 of the inner lip 250, and a horizontal portion of the upper surface 220. The lower surface of the deposition ring 125 includes the lower surface 226 of the annular band 215, the radial inner surface of the first leg 210, the lower surface of the second leg 260, and the radial outer surface of the outer lip 214.

[0033] The cap ring section 122 at least partially covers the deposition ring 125. The deposition ring 125 and the cap ring section 122 cooperate with each other to reduce the formation of sputtered deposits on the outer peripheral wall of the substrate support 130 and the overhanging edge 114 of the substrate 104. In some embodiments, the cap ring section 122 includes a protrusion 230 configured to abut a channel 240 in the deposition ring 125. The sidewall of the channel 240 is defined by the radially inner surface of the outer lip 214 and the radially outer surface of the first leg 210. The bottom wall of the channel 240 is defined by the upper surface of the second leg 260. The channel 212 is disposed radially outer of the inner lip 250. The outer lip 214 is disposed radially outer of the channel 212. The outer lip 214 is configured to abut a corresponding recess 216 in the cap ring section 122. In some embodiments, the width of the outer lip 214 from the radially inner surface to the radially outer surface is about 2.0 mm to about 3.0 mm. In some embodiments, the upper surface 342 of the outer lip 214 is disposed below the lower surface 226 of the annular band 215. In some embodiments, the length of the outer lip 214 is greater than the length of the inner lip 250.

[0034] Figure 4 A top isometric view of a deposition ring according to some embodiments of the present disclosure is depicted. The deposition ring 125 is advantageously sized to surround a substrate support 130, with a minimum gap between the deposition ring 125 and the substrate support 130, for example, from about 0.1 mm to about 0.5 mm. In some embodiments, the inner diameter of the deposition ring 125 is from about 285.0 mm to about 295.0 mm. In some embodiments, the inner diameter of the deposition ring 125 is from about 285.0 mm to about 295.0 mm. In some embodiments, the outer diameter of the deposition ring 125 is from about 340.0 mm to about 370.0 mm. In some embodiments, the deposition ring 125 does not include a protrusion extending radially inward from the inner surface 308 of the inner lip 250. In some embodiments, the outer lip 214 includes a slot 408. Figure 4 As shown, the outer lip 214 includes two slots 408 disposed opposite to each other around the deposition ring 125. Each slot 408 is configured to receive a clamp assembly 500, as described below. Figure 5 As described.

[0035] In some embodiments, the processing kit 102 may further include a clamping assembly 500 to further advantageously prevent material deposition and deposition ring 125 from adhering to the back side of the overhanging edge 114 of the substrate 104. Figure 5 A schematic cross-sectional view of a deposition ring 125 and a clamping assembly 500 according to some embodiments of the present disclosure is depicted. Each of the slots 408 has a corresponding clamping assembly 500. The clamping assembly 500 includes a base plate 502 and a clamp 504 for clamping the deposition ring 125. The base plate 502 is coupled to a substrate support 130 (e.g., coupled to the bottom surface of a base 134). The clamp 504 is disposed in an opening 516 in the base plate 502. The clamp 504 includes a shaft 518 and a protrusion 520 extending radially outward from a top portion of the shaft 518. The protrusion 520 is configured to rest on a lower surface 522 of the slot 408 of the deposition ring 125 to prevent the deposition ring 125 from rising. The clamp 504 may be coupled to the base plate 502. For example, the clamp 504 may be coupled to the base plate 502 via a screw or bolt. In some embodiments, the clamp 504 may be rotatably coupled to the base plate 502. In some embodiments, the clamp 504 may be raised or lowered relative to the base plate 502 to place the protrusion 520 into or out of the slot 408.

[0036] In some embodiments, the clamp assembly 500 includes a bracket 512 and a bushing 510 disposed on the upper surface of a base plate 502. The bushing 510 is disposed in a central opening 514 of the bracket 512 and an opening 516 of the base plate 502. The bracket 512 includes a raised portion comprising a step extending radially inward from the central opening 514 and overhanging the bushing 510. The step is configured to prevent the bushing 510 from rising relative to the base plate 502. A washer 508 having an outer diameter larger than the diameter of the opening 516 is disposed below the base plate 502. A fastener 506 is disposed below the washer 508 to secure the washer 508 to the clamp 504 to couple the clamp 504 to the base plate 502. The washer 508 and the protrusion 520 are configured to couple the clamp 504 to the base plate 502 while allowing the clamp 504 to rotate within the opening 516 and to rise or fall (e.g., move vertically) relative to the base plate 502. The clamp 504 can be raised, rotated, and lowered to allow removal of the deposited ring 125.

[0037] Although the deposition ring 125 is configured to accommodate more material deposition compared to a conventional deposition ring, if the deposition ring 125 is not cleaned after the desired thickness of material deposition has accumulated on it, the material deposition will adhere to the back side of the overhanging edge 114 of the substrate 104. Therefore, when the substrate 104 is lifted from the substrate support 130, the deposition ring 125 will be lifted along with the substrate 104. To prevent the deposition ring 125 from lifting due to improper use, the clamping assembly 500 is configured to abut against the deposition ring 125 to prevent vertical movement of the deposition ring, thereby advantageously avoiding damage to the substrate 104 or the deposition ring 125 due to the lifting of the deposition ring 125 and the substrate 104.

[0038] Back Figure 1 A one-piece shield 110 surrounds the sputtering surface 139 of the sputtering target 140, the sputtering surface 139 facing the substrate support 130 and its outer periphery. The one-piece shield 110 covers and shields the sidewalls 116 of the processing chamber 100 to reduce sputtering deposits originating from the sputtering surface 139 of the sputtering target 140 onto components and surfaces behind the one-piece shield 110. For example, the one-piece shield 110 may protect the surface of the substrate support 130, the overhanging edge 114 of the substrate 104, the sidewalls 116 of the processing chamber 100, and the bottom wall 120.

[0039] The adapter section 136 supports the one-piece shield 110 and can be used as a heat exchanger around the sidewall 116 of the processing chamber 100. In some embodiments, a heat transfer channel 152 is disposed in the upper portion 128 to allow the flow of a heat transfer medium. In some embodiments, the heat transfer channel 152 is disposed in the adapter section 136. Because the one-piece shield 110 has an integral construction, the heat transfer medium flowing through the heat transfer channel 152 directly cools / heats the area of ​​the one-piece shield 110 corresponding to the shield and the cover ring (i.e., the cylindrical body 126 and the cover ring section 122, respectively). Furthermore, the integral construction of the one-piece shield 110 advantageously allows the heat transfer medium supplier 180 to be directly coupled to the shield, which is previously indirectly coupled to the heat transfer supplier via an adapter. The heat transfer medium supplier 180 allows the heat transfer medium to flow through the heat transfer channel 152 at a flow rate sufficient to maintain the desired shield temperature.

[0040] The one-piece shield 110 allows for improved heat transfer from the one-piece shield 110 to the material on the shield and reduces thermal expansion stress on the material deposited on the shield. A portion of the one-piece shield 110 may become overheated due to exposure to plasma formed in the substrate processing chamber, causing thermal expansion of the shield and resulting in sputtered deposits formed on the shield peeling off and falling onto the substrate 104, contaminating the substrate 104. The integrated construction of the adapter section 136 and the cylindrical body 126 results in improved thermal conductivity between the adapter section 136 and the cylindrical body 126.

[0041] In some embodiments, the one-piece shield 110 comprises an integral structure made of a single piece of material. For example, the one-piece shield 110 may be formed of stainless steel or aluminum. The integral construction of the one-piece shield 110 is superior to shield designs that typically include two or three separate pieces to form a complete shield. For example, in both heating and cooling processes, a one-piece shield is more thermally uniform than a multi-piece shield. For example, the one-piece shield 110 eliminates the thermal interface between the cylindrical body 126, the adapter section 136, and the cover ring section 122, thereby allowing for greater control over heat exchange between these sections. In some embodiments, the heat transfer medium supplier 180 allows coolant to flow through the heat transfer channel 152 to counteract the adverse effects of overheated shielding on sputtered material deposited on the substrate 104, as explained above. In some embodiments, the heat transfer medium supplier 180 allows heated fluid to flow through the heat transfer channel 152 to mitigate the difference in thermal expansion coefficients between the sputtered material and the shielding.

[0042] Furthermore, shields with multiple components are more difficult and laborious to remove for cleaning. A one-piece shield 110 has a continuous surface exposed to sputter deposits, eliminating interfaces or corners that are more difficult to clean. The one-piece shield 110 also more effectively protects the chamber wall 106 from sputter deposits during processing cycles. In some embodiments, the surfaces of the one-piece shield 110 exposed to the internal volume 108 within the processing chamber 100 may be sandblasted to reduce particle shedding and prevent contamination within the processing chamber 100.

[0043] The cap ring section 122 surrounds and at least partially covers the deposition ring 125 to receive and thus shield the deposition ring 125 from bulk sputtered deposits. The cap ring section 122 includes a protruding edge 270 that covers a portion of the deposition ring 125. The protruding edge 270 includes an inclined surface 264 that is radially inward and downward inclined and surrounds the substrate support 130. The protruding edge 270 reduces the deposition of sputtered deposits on the deposition ring 125. The cap ring section 122 is sized, shaped, and positioned to mate with and complement the deposition ring 125 to form a tortuous flow path between the cap ring section 122 and the deposition ring 125, thereby inhibiting the flow of processed deposits onto the outer peripheral wall 112.

[0044] The tortuous flow path restricts the accumulation of low-energy sputtered deposits on the mating surfaces of the deposition ring 125 and the cap ring segment 122, which in turn causes the deposition ring 125 and the cap ring segment 122 to stick to each other or adhere to the overhanging edge 114 of the substrate 104. The annular band 215 of the deposition ring 125 extending below the overhanging edge 114 is designed to combine with the shielding of the protruding edge 270 of the cap ring segment 122 to collect sputtered deposits in the sputtering chamber while reducing or even substantially eliminating sputtered deposition on the mating surfaces of the cap ring segment 122 and the deposition ring 125.

[0045] like Figure 1 and Figure 2 As shown, the sputtering target 140 includes a sputtering plate 144 mounted to a backplate 150. The sputtering plate 144 contains material to be sputtered onto a substrate 104. The sputtering plate 144 may have a sputtering surface 139, which forms a plane parallel to the plane of the substrate 104. An outer peripheral inclined sidewall 288 surrounds the sputtering surface 139. The outer peripheral inclined sidewall 288 may be inclined relative to the plane of the sputtering surface 139. The outer peripheral inclined sidewall 288 may be inclined at an angle of at least about 60° (e.g., from about 75° to about 85°) relative to the plane of the cylindrical mesa 286.

[0046] An outer peripheral inclined sidewall 288 adjacent to the upper portion 128 of the one-piece shield 110 forms a gap 200 containing a dark space region. The dark space region is a region where free electrons are highly depleted and can be molded into a vacuum. Control of the dark space region advantageously prevents plasma from entering the dark space region, arcing, and plasma instability. The shape of the gap 200 impedes the passage of sputtered plasma material through the gap 200, and thus reduces the accumulation of sputtered deposits on the surface of the outer peripheral target region.

[0047] The sputtering plate 144 contains a metal or a metal compound. For example, the sputtering plate 144 may be a metal, such as aluminum, copper, tungsten, titanium, cobalt, nickel, or tantalum. The sputtering plate 144 may also be a metal compound, such as, for example, tantalum nitride, tungsten nitride, or titanium nitride.

[0048] The backplate 150 has a support surface 201 for supporting the sputtering plate 144 and an outer peripheral flange 202 extending beyond the radius of the sputtering plate 144. The backplate 150 is made of a metal, such as, for example, stainless steel, aluminum, copper-chromium, or copper-zinc. The backplate 150 may be made of a material with sufficiently high thermal conductivity to dissipate heat generated in the sputtering target 140, which is formed in both the sputtering plate 144 and the backplate 150. Heat is generated by eddies produced in the sputtering plate 144 and the backplate 150, as well as by bombardment of high-energy ions from plasma onto the sputtering surface 139 of the sputtering target 140. The higher thermal conductivity of the backplate 150 allows the heat generated in the sputtering target 140 to dissipate into surrounding structures or even to a heat exchanger that may be mounted behind or within the backplate 150 itself. For example, the backplate 150 may include channels (not shown) for circulating heat transfer fluids therein. The appropriately high thermal conductivity of the backplate 150 is at least about 200 W / m·K, for example, from about 220 to about 400 W / m·K. Such a level of thermal conductivity allows the sputtering target 140 to operate for longer processing times by more effectively dissipating the heat generated in the sputtering target 140.

[0049] In conjunction with, or separately and independently of, a backplate 150 made of a material with high thermal conductivity and low resistivity, the backplate 150 may include a backside surface having one or more grooves 252. For example, the backplate 150 may have grooves 252 (such as annular grooves) or ridges for cooling the backside 141 of the sputtering target 140. The grooves 252 and ridges may also have other patterns, such as rectangular grid patterns, claw patterns, or simply straight lines extending across the backside surface.

[0050] In some embodiments, the sputtering plate 144 may be mounted on the backing plate 150 via diffusion bonding, for example, by placing the sputtering plate 144 on the backing plate 150 and heating the sputtering plate 144 and the backing plate 150 to a suitable temperature, typically at least about 200°C. Alternatively, the sputtering target 140 may be a monolithic structure comprising a single piece of material of sufficient depth to serve as both the sputtering plate and the backing plate.

[0051] The outer peripheral flange 202 of the backplate 150 includes an outer base 204 resting on an isolator 154 within the processing chamber 100. The outer peripheral flange 202 contains an O-ring groove 206 into which an O-ring 208 is placed to form a vacuum seal. The isolator 154 electrically isolates and separates the backplate 150 from the processing chamber 100 and is typically a ring formed of a dielectric or insulating material (such as alumina). The outer peripheral flange 202 is shaped to inhibit the flow or migration of sputtered material and plasma matter through the gap between the sputtering target 140 and the isolator 154, thereby preventing low-angle sputtered deposits from penetrating into the gap.

[0052] Return to Figure 1 The sputtering target 140 is connected to one or both of a DC power source 146 and an RF power source 148. The DC power source 146 can apply a bias voltage to the sputtering target 140 relative to the one-piece shield 110, said bias voltage being electrically floating during the sputtering process. While the DC power source 146 supplies power to the sputtering target 140, the one-piece shield 110, the substrate support 130, and other chamber components connected to the DC power source 146, at least one of the DC power source 146 and the RF power source 148 excites the sputtering gas to form a plasma of sputtering gas. The formed plasma impacts and bombards the sputtering surface 139 of the sputtering target 140 to sputter material from the sputtering surface 139 onto the substrate 104.

[0053] In some embodiments, the processing chamber 100 may include a magnetic field generator 156 to form a magnetic field around the sputtering target 140 to improve sputtering of the sputtering target 140. The plasma generated by the capacitor can be enhanced by the magnetic field generator 156, wherein, for example, a permanent magnet or electromagnetic coil can provide a magnetic field with a rotating magnetic field having an axis of rotation perpendicular to the plane of the substrate 104 within the processing chamber 100. Additionally or alternatively, the processing chamber 100 may include the magnetic field generator 156 that generates a magnetic field near the sputtering target 140 to increase the ion density in a high-density plasma region adjacent to the sputtering target 140 to improve target sputtering.

[0054] Sputtering gas is introduced into the processing chamber 100 via a gas delivery system 158, which supplies gas from a gas supplier 160 via a conduit 162 having a gas flow control valve 164 (such as a mass flow controller) to deliver gas at a set flow rate. The gas is fed to a mixing manifold (not shown), where it is mixed to form a desired processing gas composition, and then fed to a gas distributor 166 having a gas outlet to introduce the gas into the processing chamber 100. The processing gas may contain non-reactive gases (such as argon or xenon) capable of impacting and sputtering material from the sputtering target 140 at high energy. The processing gas may also contain reactive gases (such as one or more of oxygen-containing and nitrogen-containing gases) capable of reacting with the sputtering material to form a layer on the substrate 104. The gas is then excited by at least one of a DC power source 146 and an RF power source 148 to form a plasma for sputtering the sputtering target 140. Used processing gas and byproducts are discharged from processing chamber 100 via vent 168. Vent 168 includes vent port 170 that receives used processing gas and delivers it to vent duct 172 with a throttle valve to control the gas pressure in processing chamber 100. Vent duct 172 is connected to one or more vent pumps 174.

[0055] Various components of the processing chamber 100 can be controlled by a controller 176. The controller 176 includes program code with an instruction set to operate the components to process the substrate 104. For example, the controller 176 may include program code including a substrate positioning instruction set for operating the substrate support 130 and the substrate transport mechanism; a gas flow control instruction set for operating a gas flow control valve to set the flow rate of sputtering gas into the processing chamber 100; a gas pressure control instruction set for operating an exhaust throttle valve to maintain the pressure in the processing chamber 100; a gas actuator control instruction set for operating at least one of a DC power source 146 and an RF power source 148 to set the gas excitation power level; a temperature control instruction set for controlling the temperature control system in the substrate support 130 or the heat transfer medium supplier 180 to control the flow rate of the heat transfer medium into the heat transfer channel 152; and a processing monitoring instruction set for monitoring the processing in the processing chamber 100.

[0056] Figure 6A top view of a base 134 and a deposition ring 125 according to some embodiments of the present disclosure is depicted. In some embodiments, the inner surface 308 of the inner lip 250 forms a continuous circle without radially inwardly extending protrusions or alignment tabs, such that the deposition ring 125 is rotatable relative to the base 134 when disposed on the base 134. In some embodiments, the substrate support surface 138 comprises an epoxy resin coating. In some embodiments, the epoxy resin coating is about 2 to about 4 micrometers thick. In some embodiments, the base 134 includes one or more lift pin openings 610 configured to allow lift pins to pass through to raise or lower the substrate 104 from or onto the base 134.

[0057] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope.

Claims

1. A device comprising: Deposition ring, configured to be disposed on a substrate support, the deposition ring comprising: An annular strip is configured to rest on the lower flange of the substrate support, the annular strip having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; An inner lip edge extends upward from the upper surface of the annular band and is adjacent to the inner surface of the annular band, wherein the inner surface of the inner lip edge and the inner surface of the annular band together form the central opening of the deposition ring, and wherein the outer surface of the inner lip edge includes a tapered portion extending radially outward and downward from the upper surface of the inner lip edge and a radial portion between the tapered portion and the upper surface of the annular band; A channel, the channel being disposed radially outside the annular belt; as well as An outer lip extends upward and is disposed radially outside the channel, wherein the upper surface of the outer lip and the channel are disposed below the lower surface of the annular band. The tapered portion of the outer surface of the inner lip extends from the central axis of the deposition ring at an angle of 5 to 15 degrees.

2. The device of claim 1, wherein the width of the inner lip is from about 2.0 mm to about 4.5 mm.

3. The device of claim 1, wherein the thickness of the annular belt at the radially inner portion is from about 2.55 mm to about 3.0 mm.

4. The device of claim 1, wherein the thickness of the annular belt at the radially outer portion is from about 4.76 mm to about 5.0 mm.

5. The device of claim 1, wherein the diameter of the inner surface of the inner lip is about 285 mm to about 295 mm.

6. The apparatus of claim 1, wherein the outer diameter of the deposition ring is about 340 mm to about 380 mm.

7. The device according to any one of claims 1-6, wherein the inner surface of the inner lip forms a continuous circle without radially inwardly extending protrusions.

8. The device of any one of claims 1-6, wherein the outer lip includes one or more slots configured to receive a clamp assembly.

9. The device as claimed in any one of claims 1-6, further comprising: A one-piece equipment shielding component, the one-piece equipment shielding component having a cylindrical body, the cylindrical body having an upper portion and a lower portion, and a cover ring section extending radially inward from the lower portion. The cap ring section includes a protrusion extending into a channel of the deposition ring and a recess extending therein from the outer lip, to define a tortuous flow path between the cap ring section and the deposition ring.

10. The device as claimed in any one of claims 1-6, further comprising: A first leg extends downward from the outer surface of the adjacent annular band; The second leg extends radially outward from the bottom portion of the first leg; and An outer lip edge, which extends upward from the second leg, wherein the first leg, the second leg, and the outer lip edge together define the channel.

11. The device as claimed in claim 10, characterized in that... At least one of the following: The length of the first leg is greater than the length of the inner lip. The length of the outer lip margin is greater than the length of the inner lip margin; or The diameter of the step is approximately 315 mm to approximately 345 mm.

12. A substrate support member, comprising: A base having a substrate support surface having a given diameter for receiving the substrate and having an electrostatic chuck disposed therein, wherein the base includes a radially outwardly extending lower flange; and The device as claimed in any one of claims 1-6, wherein the deposition ring is disposed on the lower flange.

13. The substrate support of claim 12, wherein the distance between the surface of the substrate support and the upper surface of the lower flange is about 8 to about 11 mm.

14. The substrate support of claim 12, wherein the given diameter is about 285 mm to about 293 mm.

15. The substrate support as claimed in any one of claims 12-14, wherein the lower flange has a thickness of about 10 mm to about 15 mm.

16. The substrate support as claimed in any one of claims 12-14, wherein when the deposition ring is disposed on the base, the deposition ring is rotatable relative to the base.

17. The substrate support according to any one of claims 12-14, wherein the substrate receiving surface comprises an epoxy resin coating.

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