Improved dual boost converter, control method thereof and terminal device

Abstract

The application relates to an improved double-Boost converter, a control method thereof and terminal equipment, the method comprising the following steps: controlling the improved double-Boost converter to work in an energy storage state, and obtaining a storage voltage of a first inductor; controlling the improved double-Boost converter to work in an energy release state, and obtaining a switching duty cycle; calculating a capacitor voltage and an output voltage of the first inductor and a second inductor according to the storage voltage and the switching duty cycle by adopting a volt-second balance theorem; obtaining a voltage gain calculation expression according to a comparison between an input voltage and the output voltage; and adjusting the switching duty cycle according to the voltage gain calculation expression, so as to adjust the voltage gain of the improved double-Boost converter. The voltage gain obtained by the voltage gain calculation expression is higher, and the conversion efficiency of the converter is improved; the voltage gain calculation expression is used to control the operation of the converter, the economic cost required for realizing the same target function is lower, and the anti-deviation capability is improved.

Description

Technical Field

[0001] This application relates to the field of power system harmonic suppression technology, and in particular to an improved dual-Boost converter, its control method, and terminal equipment. Background Technology

[0002] A converter transforms information from a source for a specific purpose. A DC-DC boost converter, also known as a DC-DC boost chopper, is a DC-DC converter that increases the voltage, meaning its output (load) voltage is higher than its input (power supply) voltage. A boost converter is a switching power supply with at least two semiconductor elements (a diode and a transistor) and at least one energy storage element (inductor). To reduce voltage ripple, filters made of capacitors (and sometimes inductors) are added to both the input and output terminals.

[0003] The voltage gain of existing boost converters is limited by their topology, resulting in limited adjustability and making it difficult to meet the needs of applications requiring high gain. Existing boost converters also exhibit low flexibility, making them unsuitable for complex operating conditions. Furthermore, their offset resistance is weak; when the load resistance varies significantly, the output voltage fluctuates considerably, which is detrimental to the stable operation of the power system. Summary of the Invention

[0004] This application provides an improved dual-Boost converter, its control method, and a terminal device to address the technical problems of existing Boost converters, such as simple topology, low voltage gain, limited adjustment range, and weak anti-offset capability.

[0005] To achieve the above objectives, the embodiments of this application provide the following technical solutions:

[0006] On the one hand, a control method for an improved dual-Boost converter is provided, applied to an improved dual-Boost converter, which includes a first inductor, a second inductor, a first capacitor, and a second capacitor. The control method includes the following steps:

[0007] The improved dual-Boost converter is controlled to operate in an energy storage state to obtain the stored voltage of the first inductor;

[0008] The improved dual-Boost converter is controlled to operate in an energy release state. The switching duty cycle of the improved dual-Boost converter is obtained. Based on the stored voltage and the switching duty cycle, the volt-second balance theorem is used to calculate the voltage across the first inductor and the second inductor to obtain the capacitor voltage across the first capacitor or the second capacitor and the output voltage of the improved dual-Boost converter.

[0009] The voltage gain calculation expression of the improved dual-Boost converter is obtained by comparing the input voltage and the output voltage of the improved dual-Boost converter.

[0010] The switching duty cycle of the improved dual-Boost converter is adjusted according to the voltage gain calculation expression to adjust the voltage gain of the improved dual-Boost converter.

[0011] Preferably, the voltage across the first inductor and the second inductor are calculated using the volt-second balance theorem based on the stored voltage and the switching duty cycle to obtain the capacitor voltage across the first capacitor or the second capacitor and the output voltage of the improved dual-Boost converter, including:

[0012] The capacitor voltage is calculated using the volt-second balance theorem for the first inductor. The capacitor voltage across the first capacitor or the second capacitor is calculated using the capacitor voltage calculation formula based on the stored voltage and the switch duty cycle.

[0013] The output voltage of the improved dual-Boost converter is calculated using the output voltage calculation formula based on the volt-second balance theorem for the second inductor, and the output voltage of the improved dual-Boost converter is calculated using the output voltage calculation formula based on the capacitor voltage across the first capacitor or the second capacitor and the duty cycle of the switch.

[0014] The formula for calculating the capacitor voltage is: V C1 =V C2 =V in / (1-D), V in =V L1 ;

[0015] The formula for calculating the output voltage is:

[0016]

[0017] In the formula, V in V is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V is the input voltage. C1 V is the voltage across the first capacitor. C2 V0 is the output voltage of the improved dual-Boost converter, where V0 is the capacitor voltage of the second capacitor. L1 This is the stored voltage of the first inductor.

[0018] Preferably, the voltage gain calculation expression is:

[0019]

[0020] In the formula, M is the voltage gain of the improved dual-Boost converter, and V in V0 is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V0 is the output voltage of the improved dual-Boost converter.

[0021] On another front, an improved dual-Boost converter is provided, comprising an input module and an output module. The input module includes a power supply, a first inductor, and a first switching transistor. The positive terminal of the power supply is connected to a first end of the first inductor, the second end of the first inductor is connected to a first end of the first switching transistor, and the second end of the first switching transistor is connected to the negative terminal of the power supply. The output module includes a sixth semiconductor element. The improved dual-Boost converter further includes a switch control module connected between the input module and the output module, and a main control module that controls the operation of the input module, the output module, and the switch control module. The PI control of the main control module adjusts the voltage gain of the improved dual-Boost converter according to the voltage gain calculation expression obtained by the control method of the improved dual-Boost converter described above.

[0022] Preferably, the switch control module includes a second switch transistor, a first capacitor, a second capacitor, a second inductor, a third inductor, a first semiconductor element, a second semiconductor element, a third semiconductor element, a fourth semiconductor element, and a fifth semiconductor element. The first capacitor and the first semiconductor element are connected in series, and their two ends are connected in parallel to the first and second ends of the first switch transistor. The first end of the first capacitor is connected to the first end of the second semiconductor element. The second end of the second semiconductor element is connected to the first end of the second capacitor, the first end of the third semiconductor element, and the first end of the second inductor, respectively. The second end of the second capacitor is connected to the negative terminal of the power supply. The second end of the third semiconductor element is connected to the first end of the fourth semiconductor element and the first end of the third inductor, respectively. The second ends of the third inductor and the fifth semiconductor element are connected to the first end of the sixth semiconductor element, respectively. The second end of the second inductor is connected to the second end of the fourth semiconductor element and the first end of the fifth semiconductor element, respectively. The second end of the second switch transistor is connected to the second end of the first capacitor and the first end of the first semiconductor element, respectively. The first end of the second switch transistor is connected to the first end of the sixth semiconductor element.

[0023] Preferably, the main control module is further configured to control the first switch to close, the second switch to close, and the first semiconductor element, the second semiconductor element, the third semiconductor element, the fifth semiconductor element, and the sixth semiconductor element to be reverse biased when the improved dual Boost converter is in an energy storage state, so that the first inductor and the second inductor store the energy provided by the first capacitor and the second capacitor.

[0024] Preferably, the main control module is further configured to, based on the improved dual-Boost converter being in an energy release state, control the first switch to turn off, the second switch to turn off, and control the first semiconductor element, the second semiconductor element, the third semiconductor element, the fifth semiconductor element, and the sixth semiconductor element to all be turned on, so that the first inductor and the second inductor release energy to power the output module.

[0025] Preferably, both the first and second switching transistors are MOSFETs, transistors, or IGBTs; if both the first and second switching transistors are MOSFETs, the drain of the MOSFET serves as the first terminal of the switching transistor, and the source of the MOSFET serves as the second terminal of the switching transistor; if both the first and second switching transistors are transistors or IGBTs, the collector of the transistor or IGBT serves as the first terminal of the switching transistor, and the emitter of the transistor or IGBT serves as the second terminal of the switching transistor.

[0026] Preferably, the first semiconductor element, the second semiconductor element, the third semiconductor element, the fourth semiconductor element, the fifth semiconductor element, and the sixth semiconductor element are all diodes, with the anode of the diode serving as the first end of the semiconductor element and the cathode of the diode serving as the second end of the semiconductor element.

[0027] On the other hand, a terminal device is provided, including a processor and a memory;

[0028] The memory is used to store program code and transmit the program code to the processor;

[0029] The processor is configured to execute the control method for the improved dual-Boost converter described above according to the instructions in the program code.

[0030] This invention relates to an improved dual-Boost converter, its control method, and a terminal device. The method is applied to the improved dual-Boost converter, which includes a first inductor, a second inductor, a first capacitor, and a second capacitor. The control method includes controlling the improved dual-Boost converter to operate in an energy storage state, obtaining the stored voltage of the first inductor; controlling the improved dual-Boost converter to operate in an energy release state, obtaining the switching duty cycle of the improved dual-Boost converter; calculating the voltage across the first and second inductors using the volt-second balance theorem based on the stored voltage and the switching duty cycle, obtaining the capacitor voltage across the first or second capacitor and the output voltage of the improved dual-Boost converter; comparing the input voltage and output voltage of the improved dual-Boost converter to obtain a voltage gain calculation expression for the improved dual-Boost converter; and adjusting the switching duty cycle of the improved dual-Boost converter according to the voltage gain calculation expression to adjust the voltage gain of the improved dual-Boost converter. As can be seen from the above technical solutions, the embodiments of this application have the following advantages: the control method of the improved dual-Boost converter obtains a higher voltage gain through the voltage gain calculation expression, which improves the conversion efficiency of the improved dual-Boost converter; by controlling the operation of the improved dual-Boost converter through the voltage gain calculation expression, the economic cost required to achieve the same target function is lower, and its anti-offset capability is also improved, which solves the technical problems of existing Boost converters having simple topology, small voltage gain, limited adjustment range, and weak anti-offset capability. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a flowchart illustrating the steps of the control method for the improved dual-Boost converter described in the embodiments of this application.

[0033] Figure 2 This is a schematic diagram of the topology of the improved dual-Boost converter circuit described in the embodiments of this application;

[0034] Figure 3 This is a schematic diagram of the topology of the improved dual-Boost converter PI control described in the embodiments of this application;

[0035] Figure 4This is a schematic diagram of the topology of the improved dual-Boost converter described in this application embodiment when it is in the energy storage state;

[0036] Figure 5 The waveform diagrams of the first and second switching transistors in the improved dual-Boost converter described in this application embodiment are shown.

[0037] Figure 6 This is a schematic diagram of the topology of the improved dual-Boost converter described in this application embodiment when it is in the energy release state;

[0038] Figure 7 This is a schematic diagram of the frame of the terminal device described in the embodiments of this application;

[0039] Figure 8 This is a topology diagram of a traditional Boost converter;

[0040] Figure 9 The diagram shows the topology of an existing soft-switching-based Boost converter. Detailed Implementation

[0041] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0042] In the description of the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0043] In the embodiments of this application, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0044] like Figure 8 The traditional Boost converter topology shown is simple but has low voltage gain. Some existing improved Boost converters have increased the voltage gain to some extent, but are limited by issues such as a small adjustment range. For example... Figure 8 The voltage gain formula for the conventional Boost converter with the structure shown is M = 1 / (1-D), where D is the duty cycle of switch S. The voltage gain formula shows that the voltage gain M depends only on the duty cycle of switch S.

[0045] With the development of technology, such as Figure 9 The illustrated soft-switching Boost converter includes a main power switch, an auxiliary switch, an energy storage inductor, an energy storage capacitor, an auxiliary inductor, an auxiliary capacitor, and a load. This converter has a simple circuit structure and low implementation cost; only a few additional components are needed to achieve soft switching of the main power switch, significantly improving the converter's conversion efficiency. However, this soft-switching Boost converter still suffers from drawbacks such as low voltage gain, limited adjustment range, and weak anti-offset capability.

[0046] This application provides an improved dual-Boost converter, its control method, and a terminal device, which solves the technical problems of existing Boost converters, such as simple topology, low voltage gain, limited adjustment range, and weak anti-offset capability.

[0047] Example 1:

[0048] Figure 1 This is a flowchart illustrating the steps of the control method for the improved dual-Boost converter described in the embodiments of this application. Figure 2 This is a schematic diagram of the topology of the improved dual-Boost converter circuit described in the embodiments of this application.

[0049] like Figure 1 As shown in the figure, this application provides a control method for an improved dual-Boost converter, which is applied to the improved dual-Boost converter.

[0050] like Figure 2 As shown, the improved dual-Boost converter includes an input module 10, an output module 20, and a switch control module 30 connected between the input module 10 and the output module 20. The input module 10 includes a power supply V. in The first inductor L1 and the first switching transistor S1, and the power supply V in The positive terminal is connected to the first terminal of the first inductor L1, the second terminal of the first inductor L1 is connected to the first terminal of the first switching transistor S1, and the second terminal of the first switching transistor S1 is connected to the power supply V. inThe negative terminal is connected, and the output module 20 includes a sixth semiconductor element D6, an output capacitor C0, and an output load R. The switch control module 20 includes a second switch S2, a first capacitor C1, a second capacitor C2, a second inductor L2, a third inductor L3, a first semiconductor element D1, a second semiconductor element D2, a third semiconductor element D3, a fourth semiconductor element D4, and a fifth semiconductor element D5. The first capacitor C1 is connected in series with the first semiconductor element D1, and its two ends are connected in parallel with the first and second terminals of the first switch S1. The first terminal of the first capacitor C1 is connected to the first terminal of the second semiconductor element D2. The second terminal of the second semiconductor element D2 is connected to the first terminal of the second capacitor C2, the first terminal of the third semiconductor element D3, and the first terminal of the second inductor L2, respectively. The second terminal of the second capacitor C2 is connected to the power supply V. in The negative terminal of the third semiconductor element D3 is connected to the first terminal of the fourth semiconductor element D4 and the first terminal of the third inductor L3, respectively. The second terminal of the third inductor L3 and the second terminal of the fifth semiconductor element D5 are connected to the first terminal of the sixth semiconductor element D6, respectively. The second terminal of the second inductor L2 is connected to the second terminal of the fourth semiconductor element D4 and the first terminal of the fifth semiconductor element D5, respectively. The second terminal of the second switch S2 is connected to the second terminal of the first capacitor C1 and the first terminal of the first semiconductor element D1, respectively. The first terminal of the second switch S2 is connected to the first terminal of the sixth semiconductor element D6.

[0051] The control method for this improved dual-Boost converter includes the following steps:

[0052] S1. Control the improved dual-Boost converter to operate in energy storage state and obtain the stored voltage of the first inductor.

[0053] It should be noted that in step S1, it is based on... Figure 2 When the circuit topology controls the improved dual-Boost converter to operate in energy storage mode, the stored voltage of the first inductor in the improved dual-Boost converter is obtained to provide data for subsequent analysis of the voltage gain calculation expression. The stored voltage of the first inductor serves as the input voltage of the improved dual-Boost converter.

[0054] In this embodiment, when the improved dual-Boost converter is operating in an energy storage state, the first inductor is charged by the power supply of the improved dual-Boost converter. Therefore, the input voltage of the improved dual-Boost converter is equal to the stored voltage of the first inductor, i.e., V. in =V L1 When the improved dual-Boost converter is operating in energy storage mode, the second and third inductors are charged by the first and second capacitors. Therefore, the energy storage voltage V of the second inductor... L2 Equal to the third storage voltage VL3 And equal to the voltage V of the first capacitor. c1 With the voltage V of the second capacitor c2 The sum of, i.e., V L2 =V L3 =V c1 +V c2 .

[0055] S2. Control the improved dual-Boost converter to operate in the energy release state, obtain the switching duty cycle of the improved dual-Boost converter; calculate the first inductor and the second inductor using the volt-second balance theorem based on the stored voltage and the switching duty cycle, and obtain the capacitor voltage across the first capacitor or the second capacitor and the output voltage of the improved dual-Boost converter.

[0056] It should be noted that in step S2, it is based on... Figure 2 When the circuit topology controls the improved dual-Boost converter to operate in energy release mode, the switching duty cycle of the improved dual-Boost converter is obtained to provide data for subsequent analysis of the voltage gain calculation expression. In step S2, based on the first and second storage voltages obtained in step S1 and the switching duty cycle obtained in step S2, the capacitor voltage across the first or second capacitor and the output voltage of the improved dual-Boost converter are calculated according to the volt-second balance theorem for the first and second inductors.

[0057] In this embodiment, when the improved dual-Boost converter is operating in an energy-releasing state, the first inductor, the second inductor, and the third inductor all release energy, then V L1s =V in -V c1s =V in -V c2s V L2s =V L3s =V c2s -V0, where V L1s V L2s V L3s V1 represents the voltages of the first, second, and third inductors, respectively, and V0 represents the output voltage of the improved dual-Boost converter. c1s V c2s These are the voltages of the first capacitor and the second capacitor, respectively.

[0058] S3. Based on the comparison between the input voltage and output voltage of the improved dual-Boost converter, the voltage gain calculation expression of the improved dual-Boost converter is obtained.

[0059] It should be noted that in step S3, the voltage across the first or second capacitor is related to the input voltage, as obtained in step S2, and the output voltage of the improved dual-Boost converter is related to the voltage across the first or second capacitor, as obtained in step S2. The voltage gain calculation expression of the improved dual-Boost converter is derived by comparing the input voltage and the output voltage.

[0060] S4. Adjust the switching duty cycle of the improved dual-Boost converter according to the voltage gain calculation expression to adjust the voltage gain of the improved dual-Boost converter.

[0061] Figure 3 This is a schematic diagram of the topology of the improved dual-Boost converter PI control described in the embodiments of this application.

[0062] It should be noted that, compared with the voltage gain formula of the traditional Boost converter, under the same switch duty cycle, the control method of this improved dual-Boost converter yields a higher voltage gain through the voltage gain calculation expression, thus improving the conversion efficiency of the improved dual-Boost converter. Furthermore, controlling the operation of the improved dual-Boost converter using the voltage gain calculation expression obtained through this control method requires lower economic costs to achieve the same target function. In this embodiment, the control method of this improved dual-Boost converter adjusts the switching duty cycle of the improved dual-Boost converter through PI control to adjust the voltage gain of the improved dual-Boost converter, such as... Figure 3 As shown, this simplifies the control of the improved dual-Boost converter. Specifically, the control method of this improved dual-Boost converter uses PI control to sample the output voltage and adjust the duty cycle D of the first switch S1 and the second switch S2.

[0063] This application provides a control method for an improved dual-Boost converter. The method is applied to an improved dual-Boost converter, which includes a first inductor, a second inductor, a first capacitor, and a second capacitor. The control method includes controlling the improved dual-Boost converter to operate in an energy storage state and obtaining the stored voltage of the first inductor; controlling the improved dual-Boost converter to operate in an energy release state and obtaining the switching duty cycle of the improved dual-Boost converter; calculating the voltage across the first and second inductors using the volt-second balance theorem based on the stored voltage and the switching duty cycle to obtain the capacitor voltage across the first or second capacitor and the output voltage of the improved dual-Boost converter; comparing the input voltage and output voltage of the improved dual-Boost converter to obtain a voltage gain calculation expression for the improved dual-Boost converter; and adjusting the switching duty cycle of the improved dual-Boost converter according to the voltage gain calculation expression to adjust the voltage gain of the improved dual-Boost converter. The control method of this improved dual-Boost converter yields a higher voltage gain through the voltage gain calculation expression, thereby improving the conversion efficiency of the improved dual-Boost converter. By controlling the operation of the improved dual-Boost converter through the voltage gain calculation expression, the economic cost required to achieve the same target function is lower, and its anti-offset capability is also improved. This solves the technical problems of existing Boost converters, such as simple topology, small voltage gain, limited adjustment range, and weak anti-offset capability.

[0064] In one embodiment of this application, the voltage across the first inductor and the second inductor are calculated using the volt-second balance theorem based on the storage voltage and the switching duty cycle, to obtain the capacitor voltage across the first capacitor or the second capacitor and the output voltage of the improved dual-Boost converter:

[0065] The capacitor voltage calculation formula is obtained for the first inductor based on the volt-second balance theorem. The capacitor voltage across the first capacitor or the second capacitor is calculated using the capacitor voltage calculation formula based on the storage voltage and the switch duty cycle.

[0066] The output voltage calculation formula is obtained for the second inductor based on the volt-second balance theorem. The output voltage of the improved dual boost converter is calculated using the output voltage calculation formula based on the capacitor voltage across the first or second capacitor and the switching duty cycle.

[0067] The formula for calculating capacitor voltage is: V C1 =V C2 =V in / (1-D), V in =V L1 ;

[0068] The formula for calculating the output voltage is:

[0069]

[0070] In the formula, V in V is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V is the input voltage. C1 V is the voltage across the first capacitor. C2 V0 is the output voltage of the improved dual-Boost converter, where V0 is the capacitor voltage of the second capacitor. L1 This is the stored voltage of the first inductor.

[0071] It should be noted that the control method of this improved dual-Boost converter yields a first expression for the first inductor based on the volt-second balance theorem, from which the capacitor voltage calculation formula is derived. In this embodiment, the first expression is:

[0072]

[0073] The control method for this improved dual-Boost converter, based on the volt-second balance theorem, yields a second expression for the second inductor. From this second expression, the voltage calculation formula is obtained. The second expression is:

[0074]

[0075] In the formula, TS is one duty cycle of the switching transistor, and DTS is the on-time of the switching transistor within one duty cycle.

[0076] In one embodiment of this application, the voltage gain calculation expression is as follows:

[0077]

[0078] In the formula, M is the voltage gain of the improved dual-Boost converter, and V in V0 is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V0 is the output voltage of the improved dual-Boost converter.

[0079] Example 2:

[0080] like Figure 2 As shown, this application embodiment provides an improved dual-Boost converter, including an input module 10 and an output module 20. The input module 10 includes a power supply V. in The first inductor L1 and the first switching transistor S1, and the power supply V in The positive terminal is connected to the first terminal of the first inductor L1, the second terminal of the first inductor L1 is connected to the first terminal of the first switching transistor S1, and the second terminal of the first switching transistor S1 is connected to the power supply V. inThe negative terminal is connected, and the output module 20 includes a sixth semiconductor element D6, an output capacitor C0, and an output load R. This improved dual-Boost converter also includes a switch control module 30 connected between the input module 10 and the output module 20, and a main control module that controls the operation of the input module 10, the output module 20, and the switch control module 30. The PI control of the main control module adjusts the voltage gain of the improved dual-Boost converter according to the voltage gain calculation expression obtained by the control method of the improved dual-Boost converter described above.

[0081] It should be noted that the control method of the improved dual-Boost converter has been described in detail in Embodiment 1, and will not be described again in this embodiment. In this embodiment, the circuit structure of the improved dual-Boost converter is simple. (The last sentence appears to be incomplete and unrelated to the preceding text.) Figure 8 Compared to the conventional Boost converter, this improved dual-Boost converter achieves high gain without requiring an extremely high duty cycle. At the same duty cycle, the voltage gain of this improved dual-Boost converter is higher than that of other converters, significantly improving its conversion efficiency. This improved dual-Boost converter achieves the same target function with a simple circuit structure. In this embodiment, the first terminal of the output capacitor C0 connected in parallel with the output load R is connected to the second terminal of the sixth semiconductor element D6, and the second terminal of the output capacitor C0 connected in parallel with the output load R is connected to the power supply V. in The negative terminal connection.

[0082] In the embodiments of this application, such as Figure 2 As shown, the switch control module 20 includes a second switch transistor S2, a first capacitor C1, a second capacitor C2, a second inductor L2, a third inductor L3, a first semiconductor element D1, a second semiconductor element D2, a third semiconductor element D3, a fourth semiconductor element D4, and a fifth semiconductor element D5. The first capacitor C1 is connected in series with the first semiconductor element D1, and its two ends are connected in parallel to the first and second ends of the first switch transistor S1. The first end of the first capacitor C1 is connected to the first end of the second semiconductor element D2. The second end of the second semiconductor element D2 is connected to the first ends of the second capacitor C2, the third semiconductor element D3, and the second inductor L2, respectively. The second end of the second capacitor C2 is connected to the power supply V. inThe negative terminal of the third semiconductor element D3 is connected to the first terminal of the fourth semiconductor element D4 and the first terminal of the third inductor L3, respectively. The second terminal of the third inductor L3 and the second terminal of the fifth semiconductor element D5 are connected to the first terminal of the sixth semiconductor element D6, respectively. The second terminal of the second inductor L2 is connected to the second terminal of the fourth semiconductor element D4 and the first terminal of the fifth semiconductor element D5, respectively. The second terminal of the second switch S2 is connected to the second terminal of the first capacitor C1 and the first terminal of the first semiconductor element D1, respectively. The first terminal of the second switch S2 is connected to the first terminal of the sixth semiconductor element D6.

[0083] It should be noted that the first switching transistor S1 and the second switching transistor S2 are both MOSFETs, transistors, or IGBTs. If both are MOSFETs, the drain of the MOSFET serves as the first terminal of the switching transistor, and the source of the MOSFET serves as the second terminal. If both are transistors or IGBTs, the collector of the transistor or IGBT serves as the first terminal of the switching transistor, and the emitter of the transistor or IGBT serves as the second terminal. The first semiconductor element D1, the second semiconductor element D2, the third semiconductor element D3, the fourth semiconductor element D4, the fifth semiconductor element D5, and the sixth semiconductor element D6 are all diodes, with the anode of the diode serving as the first terminal and the cathode of the diode serving as the second terminal.

[0084] Figure 4 This is a schematic diagram of the topology of the improved dual-Boost converter described in this application embodiment, operating in the energy storage state. Figure 5 The waveform diagrams show the operating cycles of the first and second switching transistors in the improved dual-Boost converter described in this application embodiment.

[0085] like Figure 4 As shown, in one embodiment of this application, the main control module is further configured to control the first switch S1 to close, the second switch S2 to close, and control the first semiconductor element D1, the second semiconductor element D2, the third semiconductor element D3, the fifth semiconductor element D5, and the sixth semiconductor element D6 to be reverse biased when the improved dual Boost converter is in the energy storage state, so that the first inductor L1 and the second inductor L2 store the energy provided by the first capacitor C1 and the second capacitor C2.

[0086] It should be noted that, as Figure 4 and Figure 5 As shown, when t = t0, the improved dual-Boost converter operates in an energy storage state, with the first inductor L1 drawing power from the power supply V. inThe first inductor L1 receives energy; simultaneously, the second inductor L2 and the third inductor L3 receive energy from the first capacitor C1 and the second capacitor C2. The currents in the first inductor L1, the second inductor L2, and the third inductor L3 increase linearly, and the direction of the current flow is as follows: Figure 4 As shown. Figure 5 As shown, when t = t1, the first switch S1 is turned off and the second switch S2 is turned off, and the improved dual-Boost converter ends its energy storage state operation.

[0087] Figure 6 This is a schematic diagram of the topology of the improved dual-Boost converter described in this application embodiment when it is in the energy release state.

[0088] like Figure 6 As shown, in one embodiment of this application, the main control module is further configured to control the first switch S1 to turn off and the second switch S2 to turn off, and control the first semiconductor element D1, the second semiconductor element D2, the third semiconductor element D3, the fifth semiconductor element D5 and the sixth semiconductor element D6 to turn on, so that the first inductor L1 and the second inductor L2 release energy to power the output module 20, based on the improved dual Boost converter being in the energy release state.

[0089] It should be noted that, as Figure 5 and Figure 6 As shown, when t = t1, the improved dual-Boost converter operates in energy release mode, with the first inductor L1 and the second inductor L2 releasing energy. The first switch S1 and the second switch S2 are off, while the first semiconductor element D1, the second semiconductor element D2, the third semiconductor element D3, the fifth semiconductor element D5, and the sixth semiconductor element D6 are on. In this energy release mode, the output load R and the output capacitor C0 are connected by power supply V. in The power supply is provided by a series circuit consisting of the first inductor L1, the second semiconductor element D2, the third inductor L3, and the third semiconductor element D3. The current path is as follows: Figure 6 As shown. When t = t2, the first switch S1 and the second switch S2 are closed, and the improved dual-Boost converter ends its energy release state operation mode.

[0090] Example 3:

[0091] Figure 7 This is a schematic diagram of the frame of the terminal device described in the embodiments of this application.

[0092] like Figure 7 As shown, this application provides a terminal device, including a processor and a memory;

[0093] Memory is used to store program code and transfer the program code to the processor;

[0094] The processor is used to execute the control method of the improved dual-Boost converter described above according to the instructions in the program code.

[0095] It should be noted that the processor is used to execute the steps in the above-described embodiment of the control method for an improved dual-Boost converter according to the instructions in the program code. Alternatively, when the processor executes the computer program, it implements the functions of each module / unit in the above-described system / device embodiments.

[0096] For example, a computer program can be divided into one or more modules / units, one or more of which are stored in memory and executed by a processor to complete this application. One or more modules / units can be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of the computer program in a terminal device.

[0097] Terminal devices can be computing devices such as desktop computers, laptops, handheld computers, and cloud servers. Terminal devices may include, but are not limited to, processors and memory. Those skilled in the art will understand that this does not constitute a limitation on the terminal device, which may include more or fewer components than illustrated, or combinations of certain components, or different components. For example, a terminal device may also include input / output devices, network access devices, buses, etc.

[0098] The processor referred to can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor.

[0099] Memory can be an internal storage unit of a terminal device, such as a hard drive or RAM. Memory can also be an external storage device, such as a plug-in hard drive, Smart Memory Card (SMC), Secure Digital Card (SD), or Flash Memory Card. Furthermore, memory can include both internal and external storage units. Memory is used to store computer programs and other programs and data required by the terminal device. Memory can also be used for temporary storage of data that has been output or will be output.

[0100] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0101] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.

[0102] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0103] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0104] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RDM), magnetic disks, or optical disks.

[0105] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. An improved dual-Boost converter, comprising an input module and an output module, the input module comprising a power supply, a first inductor, and a first switching transistor, the positive terminal of the power supply being connected to a first terminal of the first inductor, a second terminal of the first inductor being connected to a first terminal of the first switching transistor, and a second terminal of the first switching transistor being connected to the negative terminal of the power supply, the output module comprising a sixth semiconductor element, characterized in that, The improved dual-Boost converter further includes: a switch control module connected between the input module and the output module, and a main control module that controls the operation of the input module, the output module and the switch control module. The PI control of the main control module adjusts the voltage gain of the improved dual-Boost converter according to the control method of the improved dual-Boost converter. The switch control module includes a second switch transistor, a first capacitor, a second capacitor, a second inductor, a third inductor, a first semiconductor element, a second semiconductor element, a third semiconductor element, a fourth semiconductor element, and a fifth semiconductor element. The first capacitor and the first semiconductor element are connected in series, and their two ends are connected in parallel to the first and second ends of the first switch transistor. The first end of the first capacitor is connected to the first end of the second semiconductor element. The second end of the second semiconductor element is connected to the first end of the second capacitor, the first end of the third semiconductor element, and the first end of the second inductor, respectively. The second end of the second capacitor is connected to the negative terminal of the power supply. The second end of the third semiconductor element is connected to the first end of the fourth semiconductor element and the first end of the third inductor, respectively. The second ends of the third inductor and the fifth semiconductor element are connected to the first end of the sixth semiconductor element. The second end of the second inductor is connected to the second end of the fourth semiconductor element and the first end of the fifth semiconductor element, respectively. The second end of the second switch transistor is connected to the second end of the first capacitor and the first end of the first semiconductor element, respectively. The first end of the second switch transistor is connected to the first end of the sixth semiconductor element. The control method for the improved dual-Boost converter includes the following steps: The improved dual-Boost converter is controlled to operate in an energy storage state to obtain the stored voltage of the first inductor; The improved dual-Boost converter is controlled to operate in an energy release state. The switching duty cycle of the improved dual-Boost converter is obtained. Based on the stored voltage and the switching duty cycle, the volt-second balance theorem is used to calculate the voltage across the first inductor and the second inductor to obtain the capacitor voltage across the first capacitor or the second capacitor and the output voltage of the improved dual-Boost converter. The voltage gain calculation expression of the improved dual-Boost converter is obtained by comparing the input voltage and the output voltage of the improved dual-Boost converter. The switching duty cycle of the improved dual-Boost converter is adjusted according to the voltage gain calculation expression to adjust the voltage gain of the improved dual-Boost converter.

2. The improved dual-Boost converter according to claim 1, characterized in that, The main control module is also used to control the first switch to close, the second switch to close, and the first semiconductor element, the second semiconductor element, the third semiconductor element, the fifth semiconductor element, and the sixth semiconductor element to be reverse biased when the improved dual Boost converter is in the energy storage state. The first inductor and the second inductor store the energy provided by the first capacitor and the second capacitor.

3. The improved dual-Boost converter according to claim 1, characterized in that, The main control module is also used to control the first switch to turn off and the second switch to turn off, and to control the first semiconductor element, the second semiconductor element, the third semiconductor element, the fifth semiconductor element and the sixth semiconductor element to turn on, based on the improved dual Boost converter being in the energy release state. The first inductor and the second inductor release energy to power the output module.

4. The improved dual-Boost converter according to claim 1, characterized in that, Both the first and second switching transistors are MOSFETs, transistors, or IGBTs. If both the first and second switching transistors are MOSFETs, the drain of the MOSFET serves as the first terminal of the switching transistor, and the source of the MOSFET serves as the second terminal of the switching transistor. If both the first and second switching transistors are transistors or IGBTs, the collector of the transistor or IGBT serves as the first terminal of the switching transistor, and the emitter of the transistor or IGBT serves as the second terminal of the switching transistor.

5. The improved dual-Boost converter according to claim 1, characterized in that, The first semiconductor element, the second semiconductor element, the third semiconductor element, the fourth semiconductor element, the fifth semiconductor element, and the sixth semiconductor element are all diodes, with the anode of the diode serving as the first end of the semiconductor element and the cathode of the diode serving as the second end of the semiconductor element.

6. The improved dual-Boost converter according to claim 1, characterized in that, The voltage gain calculation expression is as follows: In the formula, M is the voltage gain of the improved dual-Boost converter, and V in V0 is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V0 is the output voltage of the improved dual-Boost converter.

7. The improved dual-Boost converter according to claim 1, characterized in that, Based on the stored voltage and the switching duty cycle, the volt-second balance theorem is used to calculate the capacitor voltage across the first or second capacitor and the output voltage of the improved dual-Boost converter, including: The capacitor voltage is calculated using the volt-second balance theorem for the first inductor. The capacitor voltage across the first capacitor or the second capacitor is calculated using the capacitor voltage calculation formula based on the stored voltage and the switch duty cycle. The output voltage of the improved dual-Boost converter is calculated using the output voltage calculation formula based on the volt-second balance theorem for the second inductor, and the output voltage of the improved dual-Boost converter is calculated using the output voltage calculation formula based on the capacitor voltage across the first capacitor or the second capacitor and the duty cycle of the switch. The formula for calculating the capacitor voltage is as follows: V in =V L1 ; The formula for calculating the output voltage is: In the formula, V in V is the input voltage of the improved dual-Boost converter, D is the switching duty cycle of the improved dual-Boost converter, and V is the input voltage. C1 V is the voltage across the first capacitor. C2 V0 is the output voltage of the improved dual-Boost converter, where V0 is the capacitor voltage of the second capacitor. L1 This is the storage voltage of the first inductor.

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