Capacitor structure and method of forming the same

Abstract

A capacitor structure and a method for forming the same. The structure includes: a substrate; a plurality of intermediate electrode layers, each of the intermediate electrode layers including: a plurality of first intermediate electrode terminals and a plurality of second intermediate electrode terminals arranged in parallel; and a plurality of first intermediate finger plates located between the first intermediate electrode terminals and the second intermediate electrode terminals, each of the first intermediate finger plates including: a plurality of first segments and a plurality of second segments separated from each other. Since the gap between the first segments and the second segments can be controlled in a small range by a photolithography process, a large storage density between the first segments and the second segments can be ensured, thereby improving the storage density of the capacitor structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and in particular to a capacitor structure and a method for forming the same. Background Technology

[0002] In semiconductor integrated circuits, integrated capacitors fabricated on the same chip as transistor circuits are widely used. They mainly come in two forms: metal-insulator-metal (MIM) capacitors and metal-oxide-metal (MOM) capacitors. MIM capacitors use upper and lower metal layers as capacitor plates. Fabricating MIM capacitors generally requires additional photolithography layers, and the breakdown voltage of the capacitor dielectric layer and the capacitance size are inherently contradictory. Furthermore, planar capacitors typically require a large area, which is detrimental to device integration. MOM capacitors, on the other hand, use a combination of finger structures and stacked layers to fabricate larger capacitance values ​​in a relatively smaller area. In addition, MOM capacitors do not require additional photoresist layers and masks, making the fabrication process simpler and less expensive than that of MIM capacitors.

[0003] However, the storage density of existing MOM capacitors still needs to be improved. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a capacitor structure and a method for forming the same, so as to improve the storage density and quality factor of the capacitor structure.

[0005] To solve the above-mentioned technical problems, the present invention provides a capacitor structure, comprising: a substrate; a dielectric layer on the substrate; a transition electrode layer and a plurality of intermediate electrode layers located within the dielectric layer, wherein each intermediate electrode layer comprises: a first intermediate electrode and a second intermediate electrode arranged parallel to each other along a first direction; a plurality of first intermediate finger-shaped electrodes located between the first intermediate electrode and the second intermediate electrode and arranged parallel to each other along a second direction, wherein the first direction is perpendicular to the second direction, and wherein the first intermediate finger-shaped electrodes comprise: a plurality of first segmented segments and a plurality of second segmented segments arranged alternately in parallel along the first direction, wherein the projections of corresponding first segmented segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding second segmented segments in the plurality of intermediate electrode layers overlap. The projections of the segments on the substrate overlap; the transition electrode layer includes: a first transition electrode end and a second transition electrode end arranged parallel to the first direction; a plurality of first transition finger electrodes arranged parallel to the second direction and respectively connected to the first transition electrode end; a plurality of second transition finger electrodes arranged parallel to the second direction and respectively connected to the second transition electrode end, wherein the plurality of first transition finger electrodes and the plurality of second transition finger electrodes are arranged intersectingly, and the projections of a plurality of first segmented segments and a plurality of second segmented segments in the first intermediate finger electrode on the substrate are located within the projection range of the corresponding first transition finger electrode on the substrate; the plurality of first segmented segments whose projections overlap on the substrate are connected to the first transition finger electrode through a plurality of first finger plugs.

[0006] Optionally, it further includes: a bottom electrode layer and a top electrode layer located within the dielectric layer, wherein the bottom electrode layer, the top electrode layer, the transition electrode layer and a plurality of intermediate electrode layers are repeatedly stacked and connected, the plurality of intermediate electrode layers are located between the bottom electrode layer and the top electrode layer, the transition electrode layer is located between the plurality of intermediate electrode layers, and the dielectric layer covers the bottom electrode layer, the top electrode layer, the transition electrode layer and the intermediate electrode layers.

[0007] Optionally, the bottom electrode layer includes: a first bottom electrode and a second bottom electrode arranged in parallel along the first direction; a plurality of first bottom finger electrodes arranged in parallel along the second direction and respectively connected to the first bottom electrode; a plurality of second bottom finger electrodes arranged in parallel along the second direction and respectively connected to the second bottom electrode, wherein the plurality of first bottom finger electrodes and the plurality of second bottom finger electrodes are arranged in an alternating manner.

[0008] Optionally, the top electrode layer includes: a first top electrode terminal and a second top electrode terminal arranged in parallel along the first direction; a plurality of first top finger plates arranged in parallel along the second direction and respectively connected to the first top electrode terminal; a plurality of second top finger plates arranged in parallel along the second direction and respectively connected to the second top electrode terminal, wherein the plurality of first top finger plates and the plurality of second top finger plates are arranged in an alternating manner.

[0009] Optionally, the first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode are connected sequentially by a plurality of first end plugs; the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode are connected sequentially by a plurality of second end plugs; and a plurality of second segments projected and overlapping on the substrate are connected to the second bottom finger plate and the second top finger plate by a plurality of second finger plugs.

[0010] Optionally, it further includes: a plurality of second intermediate finger-shaped electrode plates located between the first intermediate electrode and the second intermediate electrode and arranged in parallel along the second direction, wherein the plurality of first intermediate finger-shaped electrode plates and the plurality of second intermediate finger-shaped electrode plates are arranged alternately in parallel along the second direction.

[0011] Optionally, the second intermediate finger-shaped electrode plate includes: a plurality of third segments and a plurality of fourth segments arranged alternately in parallel along the first direction, wherein the projections of corresponding third segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding fourth segments in the plurality of intermediate electrode layers on the substrate overlap.

[0012] Optionally, in each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second transition finger plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first bottom finger plate and the first top finger plate through a plurality of fourth finger plugs.

[0013] Optionally, the spacing between adjacent first and second segments in the first intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

[0014] Optionally, the spacing between adjacent third and fourth segments in the second intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

[0015] Optionally, the spacing between adjacent first and second finger plugs in each layer is 50 nanometers to 500 nanometers.

[0016] Optionally, the spacing between adjacent third and fourth finger plugs in each layer is 50 nanometers to 500 nanometers.

[0017] Optionally, the number of intermediate electrode layers located above the transition electrode layer is equal to or differs by one layer from the number of intermediate electrode layers located below the transition electrode layer.

[0018] Accordingly, the present invention also provides a method for forming a capacitor structure, comprising: providing a substrate; forming a dielectric layer on the substrate, the dielectric layer having a transition electrode layer and a plurality of intermediate electrode layers, wherein each intermediate electrode layer includes: a first intermediate electrode terminal and a second intermediate electrode terminal arranged parallel to each other along a first direction; a plurality of first intermediate finger-shaped electrode plates located between the first intermediate electrode terminal and the second intermediate electrode terminal and arranged parallel to each other along a second direction, the first direction being perpendicular to the second direction, wherein the first intermediate finger-shaped electrode plates include: a plurality of first segmented segments and a plurality of second segmented segments arranged alternately in parallel along the first direction, the projections of corresponding first segmented segments in the plurality of intermediate electrode layers on the substrate overlapping, and the projections of corresponding second segmented segments in the plurality of intermediate electrode layers overlapping. The projections of the segmented segments on the substrate overlap; the transition electrode layer includes: a first transition electrode end and a second transition electrode end arranged parallel to the first direction; a plurality of first transition finger plates arranged parallel to the second direction and respectively connected to the first transition electrode end; a plurality of second transition finger plates arranged parallel to the second direction and respectively connected to the second transition electrode end, wherein the plurality of first transition finger plates and the plurality of second transition finger plates are arranged intersectingly, and the projections of a plurality of first segmented segments and a plurality of second segmented segments in the first intermediate finger plate on the substrate are located within the projection range of the corresponding first transition finger plate on the substrate; the plurality of first segmented segments whose projections overlap on the substrate are connected to the first transition finger plates through a plurality of first finger plugs.

[0019] Optionally, the dielectric layer further includes a bottom electrode layer and a top electrode layer. The bottom electrode layer, the top electrode layer, the transition electrode layer, and a plurality of intermediate electrode layers are repeatedly stacked and connected. The plurality of intermediate electrode layers are located between the bottom electrode layer and the top electrode layer, and the transition electrode layer is located between the plurality of intermediate electrode layers. The dielectric layer covers the bottom electrode layer, the top electrode layer, the transition electrode layer, and the intermediate electrode layers.

[0020] Optionally, the bottom electrode layer includes: a first bottom electrode and a second bottom electrode arranged in parallel along the first direction; a plurality of first bottom finger electrodes arranged in parallel along the second direction and respectively connected to the first bottom electrode; a plurality of second bottom finger electrodes arranged in parallel along the second direction and respectively connected to the second bottom electrode, wherein the plurality of first bottom finger electrodes and the plurality of second bottom finger electrodes are arranged in an alternating manner.

[0021] Optionally, the top electrode layer includes: a first top electrode terminal and a second top electrode terminal arranged in parallel along the first direction; a plurality of first top finger plates arranged in parallel along the second direction and respectively connected to the first top electrode terminal; a plurality of second top finger plates arranged in parallel along the second direction and respectively connected to the second top electrode terminal, wherein the plurality of first top finger plates and the plurality of second top finger plates are arranged in an alternating manner.

[0022] Optionally, the first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode are connected sequentially by a plurality of first end plugs; the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode are connected sequentially by a plurality of second end plugs; and a plurality of second segments projected and overlapping on the substrate are connected to the second bottom finger plate and the second top finger plate by a plurality of second finger plugs.

[0023] Optionally, it further includes: a plurality of second intermediate finger-shaped electrode plates located between the first intermediate electrode and the second intermediate electrode and arranged in parallel along the second direction, wherein the plurality of first intermediate finger-shaped electrode plates and the plurality of second intermediate finger-shaped electrode plates are arranged alternately in parallel along the second direction.

[0024] Optionally, the second intermediate finger-shaped electrode plate includes: a plurality of third segments and a plurality of fourth segments arranged alternately in parallel along the first direction, wherein the projections of corresponding third segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding fourth segments in the plurality of intermediate electrode layers on the substrate overlap.

[0025] Optionally, in each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second transition finger plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first bottom finger plate and the first top finger plate through a plurality of fourth finger plugs.

[0026] Optionally, the spacing between adjacent first and second segments in the first intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

[0027] Optionally, the spacing between adjacent third and fourth segments in the second intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

[0028] Optionally, the spacing between adjacent first and second finger plugs in each layer is 50 nanometers to 500 nanometers.

[0029] Optionally, the spacing between adjacent third and fourth finger plugs in each layer is 50 nanometers to 500 nanometers.

[0030] Optionally, the number of intermediate electrode layers located above the transition electrode layer is equal to or differs by one layer from the number of intermediate electrode layers located below the transition electrode layer.

[0031] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0032] In the capacitor structure provided by this invention, the first intermediate finger-shaped electrode plate includes a plurality of first segmented segments and a plurality of second segmented segments arranged alternately in parallel along the first direction. The storage density of the capacitor structure mainly originates from the spacing between adjacent first and second segmented segments in each first intermediate finger-shaped electrode plate. Although the storage density between corresponding first and second segmented segments in adjacent intermediate electrode layers is sacrificed, the gap between the first and second segmented segments can be controlled within a small range through photolithography, thus ensuring the spacing between the first and second segmented segments and thereby improving the storage density of the capacitor structure.

[0033] Furthermore, in each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second bottom layer finger electrode plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first top layer finger electrode plate through a plurality of fourth finger plugs. The storage density of the capacitor structure can also be derived from: the spaces between adjacent third and fourth segmented segments in each second intermediate finger electrode plate, the spaces between adjacent third and fourth finger plugs in each layer, and the spaces between adjacent first and third segmented segments, adjacent second and fourth segmented segments, adjacent first and third finger plugs, and adjacent second and fourth finger plugs arranged parallel along the second direction in each intermediate electrode layer, thereby further improving the storage density of the capacitor structure.

[0034] In the method for forming a capacitor structure provided by the present invention, the first intermediate finger-shaped electrode plate includes a plurality of first segmented segments and a plurality of second segmented segments arranged alternately in parallel along the first direction. The storage density of the capacitor structure mainly originates from the spacing between adjacent first segmented segments and second segmented segments in each first intermediate finger-shaped electrode plate. Although the storage density between corresponding first segmented segments and corresponding second segmented segments in adjacent intermediate electrode layers is sacrificed, the gap between the first segmented segments and the second segmented segments can be controlled within a small range by photolithography, thus ensuring the spacing between the first segmented segments and the second segmented segments, thereby improving the storage density of the capacitor structure.

[0035] Furthermore, in each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second bottom layer finger electrode plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first top layer finger electrode plate through a plurality of fourth finger plugs. The storage density of the capacitor structure can also be derived from: the spaces between adjacent third and fourth segmented segments in each second intermediate finger electrode plate, the spaces between adjacent third and fourth finger plugs in each layer, and the spaces between adjacent first and third segmented segments, adjacent second and fourth segmented segments, adjacent first and third finger plugs, and adjacent second and fourth finger plugs arranged parallel along the second direction in each intermediate electrode layer, thereby further improving the storage density of the capacitor structure. Attached Figure Description

[0036] Figure 1 and Figure 2 This is a schematic diagram of a capacitor structure.

[0037] Figures 3 to 7 This is a schematic diagram of the capacitor structure according to an embodiment of the present invention. Detailed Implementation

[0038] As described in the background section, the storage density of existing MOM capacitors still needs improvement. The following will provide a detailed explanation in conjunction with the accompanying drawings.

[0039] Please refer to Figure 1 and Figure 2 , Figure 1 This is a top view omitting the media layer. Figure 2 yes Figure 1 A schematic cross-sectional view along line AA shows a capacitor structure 10, comprising: a substrate 100; a dielectric layer 101 located on the substrate 100; and repeatedly stacked and connected electrode layers, wherein the dielectric layer 101 covers the electrode layers, and wherein the electrode layers include: a first electrode 102 and a second electrode 103 arranged parallel to a first direction X; a plurality of first finger-shaped electrodes 102a arranged parallel to a second direction Y and connected to the first electrode 102, wherein the first direction X is perpendicular to the second direction Y; and a plurality of second finger-shaped electrodes 103a arranged parallel to the second direction Y and connected to the second electrode 103, wherein the plurality of first finger-shaped electrodes 102a and the plurality of second finger-shaped electrodes 103a are arranged in an interlaced manner.

[0040] In this embodiment, the storage density in the capacitor structure 10 mainly originates from the space between adjacent first finger plates 102a and second finger plates 103a in each electrode layer (e.g., Figure 2 C1), and between the first finger electrode 102a and the second finger electrode 103a adjacent to the electrode layer (e.g. Figure 2 (C2 in the example). Therefore, the storage density of the capacitor structure 10 in this embodiment still needs to be improved.

[0041] To address the aforementioned problems, the present invention provides a capacitor structure and a method for forming the same. Since the gap between the first segment and the second segment can be controlled within a small range by photolithography, a large storage density between the first segment and the second segment can be ensured, thereby improving the storage density of the capacitor structure.

[0042] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0043] Figures 3 to 7 This is a schematic diagram of the capacitor structure according to an embodiment of the present invention.

[0044] Please refer to Figure 3 , Figure 4 and Figure 6 , Figure 3 This is a top view omitting the media layer. Figure 4 yes Figure 3 Schematic diagram of the cross section along line BB. Figure 6 yes Figure 4A top view of part A shows a capacitor structure 20, comprising: a substrate 200; a dielectric layer 201 on the substrate 200; and repeatedly stacked and connected bottom electrode layers, top electrode layers, transition electrode layers, and a plurality of intermediate electrode layers, wherein the plurality of intermediate electrode layers are located between the bottom electrode layers and the top electrode layers, and the transition electrode layers are located between the plurality of intermediate electrode layers. The dielectric layer 201 covers the bottom electrode layers, top electrode layers, transition electrode layers, and intermediate electrode layers. The bottom electrode layers include: a first bottom electrode terminal 202 and a second bottom electrode terminal 203 arranged parallel to a first direction X; and a plurality of electrodes arranged parallel to a second direction X, respectively connected to the first bottom electrode terminal 202. A first bottom layer of finger-shaped electrode plates 202a are arranged parallel to the Y direction, with the first direction X perpendicular to the second direction Y; a plurality of second bottom layer finger-shaped electrode plates 203a are arranged parallel to the second direction Y and connected to the second bottom layer electrode terminals 203 respectively, and the plurality of first bottom layer finger-shaped electrode plates 202a and the plurality of second bottom layer finger-shaped electrode plates 203a are arranged in an alternating manner; each intermediate electrode layer includes: a first intermediate electrode terminal 204 and a second intermediate electrode terminal 205 arranged parallel to the first direction X; a plurality of first intermediate finger-shaped electrode plates 206 located between the first intermediate electrode terminal 204 and the second intermediate electrode terminal 205 and arranged parallel to the second direction Y, wherein the first intermediate finger-shaped electrode plates 206 includes: a plurality of first segmented segments 206a and a plurality of second segmented segments 206b arranged alternately in parallel along the first direction, wherein the projections of corresponding first segmented segments 206a in the plurality of intermediate electrode layers on the substrate 200 overlap, and the projections of corresponding second segmented segments 206b in the plurality of intermediate electrode layers on the substrate 200 overlap; the transition electrode layer includes: a first transition electrode end 216 and a second transition electrode end 217 arranged parallel along the first direction X; a plurality of first transition finger plates 216a arranged parallel along the second direction Y respectively connected to the first transition electrode end 216; and a plurality of first transition finger plates 216a arranged parallel along the second direction Y respectively connected to the second transition electrode end 217. The first transition finger plates 217a are arranged in parallel along the Y direction, and a plurality of first transition finger plates 216a and a plurality of second transition finger plates 217a are arranged in an interlaced manner. The projections of a plurality of first segmented segments 206a and a plurality of second segmented segments 206b in the first intermediate finger plate 206 onto the substrate 200 are located within the projection range of the corresponding first transition finger plate 216a onto the substrate 200. The top electrode layer includes: a first top electrode terminal 207 and a second top electrode terminal 208 arranged in parallel along the first direction X; and a plurality of first top electrode plates 207a arranged in parallel along the second direction Y and respectively connected to the first top electrode terminal 207.A plurality of second top-layer finger-shaped electrode plates 208a, arranged parallel to the second direction Y, are respectively connected to the second top-layer electrode terminal 208, and a plurality of first top-layer finger-shaped electrode plates 207a and a plurality of second top-layer finger-shaped electrode plates 208a are arranged in a cross pattern; the first bottom-layer electrode terminal 202, the first intermediate electrode terminal 204, the first transition electrode terminal 216, and the first top-layer electrode terminal 207 are sequentially connected by a plurality of first end plugs 209; the second bottom-layer electrode terminal 203, the second intermediate electrode terminal 205, the second transition electrode terminal 217, and the second top-layer electrode terminal 208 are sequentially connected by a plurality of second end plugs 210; a plurality of first segmented segments 206a, projected and overlapping on the substrate 200, are connected to the first transition finger-shaped electrode plate 216a by a plurality of first finger-shaped plugs 211; a plurality of second segmented segments 206b, projected and overlapping on the substrate 200, are connected to the second bottom-layer finger-shaped electrode plate 203a and the second top-layer finger-shaped electrode plate 208a by a plurality of second finger-shaped plugs 212.

[0045] It should be noted that, in this embodiment, the voltages applied to the first bottom electrode 202, the first intermediate electrode 204, the first transition electrode 216, and the first top electrode 207 are different from the voltages applied to the second bottom electrode 203, the second intermediate electrode 205, the second transition electrode 217, and the second top electrode 208.

[0046] In this embodiment, the voltages applied to the first bottom electrode 202, the first intermediate electrode 204, the first transition electrode 216, and the first top electrode 207 are higher than the voltages applied to the second bottom electrode 203, the second intermediate electrode 205, the second transition electrode 217, and the second top electrode 208.

[0047] In other embodiments, the voltage applied to the first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode may be lower than the voltage applied to the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode.

[0048] In this embodiment, the storage density of the capacitor structure 20 mainly originates from the space between adjacent first segment 206a and second segment 206b in each of the first intermediate finger plates (e.g., Figure 4 (C1), and between adjacent first finger plugs 211 and second finger plugs 212 in each layer (e.g., ... Figure 4(C2). Although the storage density between the corresponding first segment 206a and the corresponding second segment 206b in the adjacent intermediate electrode layers is sacrificed, the gap between the first segment 206a and the second segment 206b can be controlled within a small range by photolithography. Therefore, a large storage density can be ensured between the first segment 206a and the second segment 206b, as well as between the first finger plug 211 and the second finger plug 212, thereby improving the storage density of the capacitor structure. Furthermore, several of the first segmented segments 206a are connected to the first transition finger plate 216a via several first finger plugs 211. The first transition finger plate 216a is located in the middle and is connected in parallel to several of the first segmented segments 206a, thereby reducing the resistance passing through several of the first segmented segments 206a. Several of the second segmented segments 206b are connected in parallel from both ends to the second bottom finger plate 203a and the second top finger plate 208a, respectively, thereby reducing the resistance passing through several of the second segmented segments 206b, and thus improving the quality factor of the capacitor structure.

[0049] In this embodiment, the spacing between adjacent first segment 206a and second segment 206b in the first intermediate finger electrode is 30 nanometers to 200 nanometers.

[0050] In this embodiment, the spacing between adjacent first finger plugs 211 and second finger plugs 212 in each layer is 50 nanometers to 500 nanometers.

[0051] In this embodiment, since the number of intermediate electrode layers is even, the number of intermediate electrode layers above the transition electrode layer differs from the number of intermediate electrode layers below the transition electrode layer by one layer.

[0052] In other embodiments, when the number of the plurality of intermediate electrode layers is odd, the number of intermediate electrode layers located above the transition electrode layer is equal to the number of intermediate electrode layers located below the transition electrode layer.

[0053] Please refer to Figure 5 and Figure 6 , Figure 5 yes Figure 3 Schematic diagram of the cross section along the CC line. Figure 6 yes Figure 5The top view of part A in this embodiment further includes: a plurality of second intermediate finger-shaped electrode plates 213 located between the first intermediate electrode end 204 and the second intermediate electrode end 205 and arranged in parallel along the second direction Y; the plurality of first intermediate finger-shaped electrode plates 213 and the plurality of second intermediate finger-shaped electrode plates 206 are arranged alternately in parallel along the second direction Y.

[0054] In this embodiment, the second intermediate finger-shaped electrode plate 213 includes a plurality of third segment 213a and a plurality of fourth segment 213b arranged alternately in parallel along the first direction X. The projections of the corresponding third segment 213a in the plurality of intermediate electrode layers on the substrate 200 overlap, and the projections of the corresponding fourth segment 213b in the plurality of intermediate electrode layers on the substrate 200 overlap.

[0055] Please refer to Figure 7 In this embodiment, in each intermediate electrode layer, a plurality of first segmented segments 206a and a plurality of third segmented segments 213a are arranged alternately in parallel along the second direction Y, and a plurality of second segmented segments 206b and a plurality of fourth segmented segments 213b are arranged alternately in parallel along the second direction Y; a plurality of third segmented segments 213a projected and overlapping on the substrate 200 are connected to the second transition finger electrode plate 217a through a plurality of third finger plugs 214; a plurality of fourth segmented segments 213b projected and overlapping on the substrate 200 are connected to the first bottom finger electrode plate 202a and the first top finger electrode plate 207a through a plurality of fourth finger plugs 215.

[0056] In this embodiment, the storage density of the capacitor structure 20 can also be derived from the space between adjacent third segments 213a and fourth segments 213b in each of the second intermediate finger plates 213 (e.g., Figure 5 (C3), and between adjacent third finger plugs 214 and fourth finger plugs 215 in each layer (e.g. Figure 5 In each of the intermediate electrode layers (C4), between the first segment 206a and the third segment 213a, which are arranged parallel to each other along the second direction Y and are adjacent to each other (e.g., C4), Figure 7 C5), between the adjacent second segment 206b and the fourth segment 213b (e.g. Figure 7 (C6) Between the adjacent first finger plug 211 and the third finger plug 214 (e.g. Figure 7 C7), and between the adjacent second finger plug 212 and the fourth finger plug 215 (e.g. Figure 7(C8) to further improve the storage density of the capacitor structure. Additionally, several third segments 213a are connected to the second transition finger plate 217a via several third finger plugs 214. The second transition finger plate 217a is located in the middle and connected in parallel to several third segments 213a, reducing the resistance passing through the third segments 213a. Several fourth segments 213b are connected in parallel from both ends to the first bottom finger plate 202a and the first top finger plate 207a, respectively, reducing the resistance passing through the fourth segments 213b, thereby improving the quality factor of the capacitor structure.

[0057] In this embodiment, the spacing between the adjacent third segment 213a and the fourth segment 213b in the second intermediate finger electrode 213 is 30 nanometers to 200 nanometers.

[0058] In this embodiment, the spacing between adjacent third finger plugs 214 and fourth finger plugs 215 in each layer is 50 nanometers to 500 nanometers.

[0059] In this embodiment, the material of the dielectric layer 201 includes a low-k dielectric material.

[0060] The low-k dielectric material includes silicon oxide, silicon nitride, or silicon oxynitride. In this embodiment, the dielectric layer is made of silicon oxide.

[0061] Accordingly, this invention also provides a method for forming a capacitor structure; please refer to the following: Figures 3 to 7The system includes: a substrate 200; a dielectric layer 201 located on the substrate 200; and repeatedly stacked and connected bottom electrode layers, top electrode layers, transition electrode layers, and a plurality of intermediate electrode layers, wherein the plurality of intermediate electrode layers are located between the bottom electrode layers and the top electrode layers, and the transition electrode layers are located between the plurality of intermediate electrode layers. The dielectric layer 201 covers the bottom electrode layers, top electrode layers, transition electrode layers, and intermediate electrode layers. The bottom electrode layers include: a first bottom electrode terminal 202 and a second bottom electrode terminal 203 arranged parallel to a first direction X; and a plurality of first bottom finger-shaped electrodes arranged parallel to a second direction Y, respectively connected to the first bottom electrode terminal 202. The electrode 202a is perpendicular to the second direction Y in the first direction X; a plurality of second bottom-layer finger-shaped electrode plates 203a are connected to the second bottom-layer electrode 203 and arranged parallel to the second direction Y, and the plurality of first bottom-layer finger-shaped electrode plates 202a and the plurality of second bottom-layer finger-shaped electrode plates 203a are arranged in an alternating manner; each intermediate electrode layer includes: a first intermediate electrode 204 and a second intermediate electrode 205 arranged parallel to the first direction X; a plurality of first intermediate finger-shaped electrode plates 206 located between the first intermediate electrode 204 and the second intermediate electrode 205 and arranged parallel to the second direction Y, wherein the first intermediate finger-shaped electrode plates 206 include: along the... The intermediate electrode layers consist of a plurality of first segmented segments 206a and a plurality of second segmented segments 206b arranged alternately in parallel along a first direction. The projections of corresponding first segmented segments 206a on the substrate 200 overlap, and the projections of corresponding second segmented segments 206b on the substrate 200 also overlap. The transition electrode layer includes: a first transition electrode 216 and a second transition electrode 217 arranged parallel along the first direction X; a plurality of first transition finger-shaped electrodes 216a connected to the first transition electrode 216 and arranged parallel along the second direction Y; and a plurality of first transition finger-shaped electrodes 216a connected to the second transition electrode 217 and arranged parallel along the second direction Y. The first transition finger electrode 217a is arranged in a row, and a plurality of first transition finger electrode 216a and a plurality of second transition finger electrode 217a are arranged in an interlaced manner. The projections of a plurality of first segmented segments 206a and a plurality of second segmented segments 206b in the first intermediate finger electrode 206 onto the substrate 200 are located within the projection range of the corresponding first transition finger electrode 216a onto the substrate 200. The top electrode layer includes: a first top electrode terminal 207 and a second top electrode terminal 208 arranged in parallel along the first direction X; and a plurality of first top electrode finger electrode 207a arranged in parallel along the second direction Y, respectively connected to the first top electrode terminal 207.A plurality of second top-layer finger-shaped electrode plates 208a, arranged parallel to the second direction Y, are respectively connected to the second top-layer electrode terminal 208, and a plurality of first top-layer finger-shaped electrode plates 207a and a plurality of second top-layer finger-shaped electrode plates 208a are arranged in a cross pattern; the first bottom-layer electrode terminal 202, the first intermediate electrode terminal 204, the first transition electrode terminal 216, and the first top-layer electrode terminal 207 are sequentially connected by a plurality of first end plugs 209; the second bottom-layer electrode terminal 203, the second intermediate electrode terminal 205, the second transition electrode terminal 217, and the second top-layer electrode terminal 208 are sequentially connected by a plurality of second end plugs 210; a plurality of first segmented segments 206a, projected and overlapping on the substrate 200, are connected to the first transition finger-shaped electrode plate 216a by a plurality of first finger-shaped plugs 211; a plurality of second segmented segments 206b, projected and overlapping on the substrate 200, are connected to the second bottom-layer finger-shaped electrode plate 203a and the second top-layer finger-shaped electrode plate 208a by a plurality of second finger-shaped plugs 212.

[0062] It should be noted that, in this embodiment, the voltages applied to the first bottom electrode 202, the first intermediate electrode 204, the first transition electrode 216, and the first top electrode 207 are different from the voltages applied to the second bottom electrode 203, the second intermediate electrode 205, the second transition electrode 217, and the second top electrode 208.

[0063] In this embodiment, the voltages applied to the first bottom electrode 202, the first intermediate electrode 204, the first transition electrode 216, and the first top electrode 207 are higher than the voltages applied to the second bottom electrode 203, the second intermediate electrode 205, the second transition electrode 217, and the second top electrode 208.

[0064] In other embodiments, the voltage applied to the first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode may be lower than the voltage applied to the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode.

[0065] In this embodiment, the storage density of the capacitor structure 20 mainly originates from the space between adjacent first segment 206a and second segment 206b in each of the first intermediate finger plates (e.g., Figure 4 (C1), and between adjacent first finger plugs 211 and second finger plugs 212 in each layer (e.g., ... Figure 4(C2). Although the storage density between the corresponding first segment 206a and the corresponding second segment 206b in the adjacent intermediate electrode layers is sacrificed, the gap between the first segment 206a and the second segment 206b can be controlled within a small range by photolithography. Therefore, a large storage density can be ensured between the first segment 206a and the second segment 206b, as well as between the first finger plug 211 and the second finger plug 212, thereby improving the storage density of the capacitor structure. Furthermore, several of the first segmented segments 206a are connected to the first transition finger plate 216a via several first finger plugs 211. The first transition finger plate 216a is located in the middle and is connected in parallel to several of the first segmented segments 206a, thereby reducing the resistance passing through several of the first segmented segments 206a. Several of the second segmented segments 206b are connected in parallel from both ends to the second bottom finger plate 203a and the second top finger plate 208a, respectively, thereby reducing the resistance passing through several of the second segmented segments 206b, and thus improving the quality factor of the capacitor structure.

[0066] In this embodiment, the spacing between adjacent first segment 206a and second segment 206b in the first intermediate finger electrode is 30 nanometers to 200 nanometers.

[0067] In this embodiment, the spacing between adjacent first finger plugs 211 and second finger plugs 212 in each layer is 50 nanometers to 500 nanometers.

[0068] In this embodiment, since the number of intermediate electrode layers is even, the number of intermediate electrode layers above the transition electrode layer differs from the number of intermediate electrode layers below the transition electrode layer by one layer.

[0069] In other embodiments, when the number of the plurality of intermediate electrode layers is odd, the number of intermediate electrode layers located above the transition electrode layer is equal to the number of intermediate electrode layers located below the transition electrode layer.

[0070] Please refer to Figure 5 , Figure 5 yes Figure 3 A schematic diagram of the cross-section along the CC line is shown in this embodiment. It also includes: a plurality of second intermediate finger-shaped electrode plates 213 located between the first intermediate electrode 204 and the second intermediate electrode 205 and arranged in parallel along the second direction Y. The plurality of first intermediate finger-shaped electrode plates 213 and the plurality of second intermediate finger-shaped electrode plates 206 are arranged alternately in parallel along the second direction Y.

[0071] In this embodiment, the second intermediate finger-shaped electrode plate 213 includes a plurality of third segment 213a and a plurality of fourth segment 213b arranged alternately in parallel along the first direction X. The projections of the corresponding third segment 213a in the plurality of intermediate electrode layers on the substrate 200 overlap, and the projections of the corresponding fourth segment 213b in the plurality of intermediate electrode layers on the substrate 200 overlap.

[0072] Please refer to Figure 6 In this embodiment, in each intermediate electrode layer, a plurality of first segmented segments 206a and a plurality of third segmented segments 213a are arranged alternately in parallel along the second direction Y, and a plurality of second segmented segments 206b and a plurality of fourth segmented segments 213b are arranged alternately in parallel along the second direction Y; a plurality of third segmented segments 213a projected and overlapping on the substrate 200 are connected to the second transition finger electrode plate 217a through a plurality of third finger plugs 214; a plurality of fourth segmented segments 213b projected and overlapping on the substrate 200 are connected to the first bottom finger electrode plate 202a and the first top finger electrode plate 207a through a plurality of fourth finger plugs 215.

[0073] In this embodiment, the storage density of the capacitor structure 20 can also be derived from the space between adjacent third segments 213a and fourth segments 213b in each of the second intermediate finger plates 213 (e.g., Figure 5 (C3), and between adjacent third finger plugs 214 and fourth finger plugs 215 in each layer (e.g. Figure 5 In each of the intermediate electrode layers (C4), between the first segment 206a and the third segment 213a, which are arranged parallel to each other along the second direction Y and are adjacent to each other (e.g., C4), Figure 7 C5), between the adjacent second segment 206b and the fourth segment 213b (e.g. Figure 7 (C6) Between the adjacent first finger plug 211 and the third finger plug 214 (e.g. Figure 7 C7), and between the adjacent second finger plug 212 and the fourth finger plug 215 (e.g. Figure 7(C8) to further improve the storage density of the capacitor structure. Additionally, several third segments 213a are connected to the second transition finger plate 217a via several third finger plugs 214. The second transition finger plate 217a is located in the middle and connected in parallel to several third segments 213a, reducing the resistance passing through the third segments 213a. Several fourth segments 213b are connected in parallel from both ends to the first bottom finger plate 202a and the first top finger plate 207a, respectively, reducing the resistance passing through the fourth segments 213b, thereby improving the quality factor of the capacitor structure.

[0074] In this embodiment, the spacing between the adjacent third segment 213a and the fourth segment 213b in the second intermediate finger electrode 213 is 30 nanometers to 200 nanometers.

[0075] In this embodiment, the spacing between adjacent third finger plugs 214 and fourth finger plugs 215 in each layer is 50 nanometers to 500 nanometers.

[0076] In this embodiment, the material of the dielectric layer 201 includes a low-k dielectric material.

[0077] The low-k dielectric material includes silicon oxide, silicon nitride, or silicon oxynitride. In this embodiment, the dielectric layer is made of silicon oxide.

[0078] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A capacitor structure, characterized in that, include: Substrate; A dielectric layer located on the substrate; A transition electrode layer and several intermediate electrode layers are located within the dielectric layer, wherein, Each of the intermediate electrode layers includes: a first intermediate electrode terminal and a second intermediate electrode terminal arranged parallel to each other along a first direction; and a plurality of first intermediate finger-shaped electrode plates located between the first intermediate electrode terminal and the second intermediate electrode terminal and arranged parallel to each other along a second direction, wherein the first direction is perpendicular to the second direction. The first intermediate finger electrode plate includes: a plurality of first segments and a plurality of second segments arranged alternately in parallel along the first direction, wherein the projections of corresponding first segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding second segments in the plurality of intermediate electrode layers on the substrate overlap. The transition electrode layer includes: a first transition electrode and a second transition electrode arranged in parallel along the first direction; a plurality of first transition finger electrodes arranged in parallel along the second direction and respectively connected to the first transition electrode; a plurality of second transition finger electrodes arranged in parallel along the second direction and respectively connected to the second transition electrode, wherein the plurality of first transition finger electrodes and the plurality of second transition finger electrodes are arranged in an interlaced manner, and the projections of a plurality of first segmented segments and a plurality of second segmented segments in the first intermediate finger electrode on the substrate are located within the projection range of the corresponding first transition finger electrode on the substrate; Several first segmented segments projected and overlapping on the substrate are connected to the first transition finger plate via several first finger plugs.

2. The capacitor structure as described in claim 1, characterized in that, Also includes: The dielectric layer contains a bottom electrode layer and a top electrode layer. The bottom electrode layer, the top electrode layer, the transition electrode layer, and a plurality of intermediate electrode layers are repeatedly stacked and connected. The plurality of intermediate electrode layers are located between the bottom electrode layer and the top electrode layer. The transition electrode layer is located between the plurality of intermediate electrode layers. The dielectric layer covers the bottom electrode layer, the top electrode layer, the transition electrode layer, and the intermediate electrode layers.

3. The capacitor structure as described in claim 2, characterized in that, The bottom electrode layer includes: a first bottom electrode and a second bottom electrode arranged in parallel along the first direction; a plurality of first bottom finger electrodes arranged in parallel along the second direction and respectively connected to the first bottom electrode; a plurality of second bottom finger electrodes arranged in parallel along the second direction and respectively connected to the second bottom electrode, wherein the plurality of first bottom finger electrodes and the plurality of second bottom finger electrodes are arranged in an interlaced manner.

4. The capacitor structure as described in claim 3, characterized in that, The top electrode layer includes: a first top electrode and a second top electrode arranged in parallel along the first direction; a plurality of first top finger plates arranged in parallel along the second direction and respectively connected to the first top electrode; a plurality of second top finger plates arranged in parallel along the second direction and respectively connected to the second top electrode, wherein the plurality of first top finger plates and the plurality of second top finger plates are arranged in an alternating manner.

5. The capacitor structure as described in claim 4, characterized in that, The first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode are connected in sequence by a plurality of first end plugs; the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode are connected in sequence by a plurality of second end plugs; a plurality of second segments projected and overlapping on the substrate are connected to the second bottom finger plate and the second top finger plate by a plurality of second finger plugs.

6. The capacitor structure as described in claim 5, characterized in that, Also includes: A plurality of second intermediate finger-shaped electrode plates are located between the first intermediate electrode and the second intermediate electrode and are arranged in parallel along the second direction. The plurality of first intermediate finger-shaped electrode plates and the plurality of second intermediate finger-shaped electrode plates are arranged alternately in parallel along the second direction.

7. The capacitor structure as described in claim 6, characterized in that, The second intermediate finger-shaped electrode plate includes: a plurality of third segments and a plurality of fourth segments arranged alternately in parallel along the first direction, wherein the projections of corresponding third segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding fourth segments in the plurality of intermediate electrode layers on the substrate overlap.

8. The capacitor structure as described in claim 7, characterized in that, In each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second transition finger plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first bottom finger plate and the first top finger plate through a plurality of fourth finger plugs.

9. The capacitor structure as described in claim 1, characterized in that, The spacing between adjacent first and second segments in the first intermediate finger-shaped electrode plate is 30 nanometers to 200 nanometers.

10. The capacitor structure as described in claim 7, characterized in that, The spacing between adjacent third and fourth segments in the second intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

11. The capacitor structure as described in claim 5, characterized in that, The spacing between adjacent first and second finger plugs in each layer is 50 nanometers to 500 nanometers.

12. The capacitor structure as described in claim 8, characterized in that, The spacing between adjacent third and fourth finger plugs in each layer is 50 nanometers to 500 nanometers.

13. The capacitor structure as described in claim 2, characterized in that, The number of intermediate electrode layers located above the transition electrode layer is equal to or differs by one layer from the number of intermediate electrode layers located below the transition electrode layer.

14. A method for forming a capacitor structure, characterized in that, include: Provide substrate; A dielectric layer is formed on the substrate, and the dielectric layer includes a transition electrode layer and several intermediate electrode layers, wherein... Each of the intermediate electrode layers includes: a first intermediate electrode terminal and a second intermediate electrode terminal arranged parallel to each other along a first direction; and a plurality of first intermediate finger-shaped electrode plates located between the first intermediate electrode terminal and the second intermediate electrode terminal and arranged parallel to each other along a second direction, wherein the first direction is perpendicular to the second direction. The first intermediate finger electrode plate includes: a plurality of first segments and a plurality of second segments arranged alternately in parallel along the first direction, wherein the projections of corresponding first segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding second segments in the plurality of intermediate electrode layers on the substrate overlap. The transition electrode layer includes: a first transition electrode and a second transition electrode arranged in parallel along the first direction; a plurality of first transition finger electrodes arranged in parallel along the second direction and respectively connected to the first transition electrode; a plurality of second transition finger electrodes arranged in parallel along the second direction and respectively connected to the second transition electrode, wherein the plurality of first transition finger electrodes and the plurality of second transition finger electrodes are arranged in an interlaced manner, and the projections of a plurality of first segmented segments and a plurality of second segmented segments in the first intermediate finger electrode on the substrate are located within the projection range of the corresponding first transition finger electrode on the substrate; Several first segmented segments projected and overlapping on the substrate are connected to the first transition finger plate via several first finger plugs.

15. The method for forming a capacitor structure as described in claim 14, characterized in that, The dielectric layer also includes a bottom electrode layer and a top electrode layer. The bottom electrode layer, the top electrode layer, the transition electrode layer, and a plurality of intermediate electrode layers are repeatedly stacked and connected. The plurality of intermediate electrode layers are located between the bottom electrode layer and the top electrode layer, and the transition electrode layer is located between the plurality of intermediate electrode layers. The dielectric layer covers the bottom electrode layer, the top electrode layer, the transition electrode layer, and the intermediate electrode layers.

16. The method for forming a capacitor structure as described in claim 15, characterized in that, The bottom electrode layer includes: a first bottom electrode and a second bottom electrode arranged in parallel along the first direction; a plurality of first bottom finger electrodes arranged in parallel along the second direction and respectively connected to the first bottom electrode; a plurality of second bottom finger electrodes arranged in parallel along the second direction and respectively connected to the second bottom electrode, wherein the plurality of first bottom finger electrodes and the plurality of second bottom finger electrodes are arranged in an interlaced manner.

17. The method for forming a capacitor structure as described in claim 16, characterized in that, The top electrode layer includes: a first top electrode and a second top electrode arranged in parallel along the first direction; a plurality of first top finger plates arranged in parallel along the second direction and respectively connected to the first top electrode; a plurality of second top finger plates arranged in parallel along the second direction and respectively connected to the second top electrode, wherein the plurality of first top finger plates and the plurality of second top finger plates are arranged in an alternating manner.

18. The method for forming a capacitor structure as described in claim 17, characterized in that, The first bottom electrode, the first intermediate electrode, the first transition electrode, and the first top electrode are connected in sequence by a plurality of first end plugs; the second bottom electrode, the second intermediate electrode, the second transition electrode, and the second top electrode are connected in sequence by a plurality of second end plugs; a plurality of second segments projected and overlapping on the substrate are connected to the second bottom finger plate and the second top finger plate by a plurality of second finger plugs.

19. The method for forming a capacitor structure as described in claim 18, characterized in that, Also includes: A plurality of second intermediate finger-shaped electrode plates are located between the first intermediate electrode and the second intermediate electrode and are arranged in parallel along the second direction. The plurality of first intermediate finger-shaped electrode plates and the plurality of second intermediate finger-shaped electrode plates are arranged alternately in parallel along the second direction.

20. The method for forming a capacitor structure as described in claim 19, characterized in that, The second intermediate finger-shaped electrode plate includes: a plurality of third segments and a plurality of fourth segments arranged alternately in parallel along the first direction, wherein the projections of corresponding third segments in the plurality of intermediate electrode layers on the substrate overlap, and the projections of corresponding fourth segments in the plurality of intermediate electrode layers on the substrate overlap.

21. The method for forming a capacitor structure as described in claim 20, characterized in that, In each intermediate electrode layer, a plurality of first segmented segments and a plurality of third segmented segments are arranged alternately in parallel along the second direction, and a plurality of second segmented segments and a plurality of fourth segmented segments are arranged alternately in parallel along the second direction; a plurality of third segmented segments projected and overlapping on the substrate are connected to the second transition finger plate through a plurality of third finger plugs; a plurality of fourth segmented segments projected and overlapping on the substrate are connected to the first bottom finger plate and the first top finger plate through a plurality of fourth finger plugs.

22. The method for forming a capacitor structure as described in claim 14, characterized in that, The spacing between adjacent first and second segments in the first intermediate finger-shaped electrode plate is 30 nanometers to 200 nanometers.

23. The method for forming a capacitor structure as described in claim 20, characterized in that, The spacing between adjacent third and fourth segments in the second intermediate finger-shaped electrode is 30 nanometers to 200 nanometers.

24. The method for forming a capacitor structure as described in claim 18, characterized in that, The spacing between adjacent first and second finger plugs in each layer is 50 nanometers to 500 nanometers.

25. The method for forming a capacitor structure as described in claim 21, characterized in that, The spacing between adjacent third and fourth finger plugs in each layer is 50 nanometers to 500 nanometers.

26. The method for forming a capacitor structure as described in claim 14, characterized in that, The number of intermediate electrode layers located above the transition electrode layer is equal to or differs by one layer from the number of intermediate electrode layers located below the transition electrode layer.

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