Display device using semiconductor light emitting device
By symmetrically installing light-emitting devices in the display device, the problems of color variation and ghosting caused by differences in crystallinity and polarity of the display are solved, achieving a more uniform light distribution and reduced parasitic capacitance, thus enhancing the color viewing angle.
Patent Information
- Application Number
- CN202280011755.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-06-02
- Publication Date
- 2026-11-06
- Estimated Expiration
- 2042-06-02
AI Technical Summary
In existing display devices, the distribution of bias light caused by the crystallinity of the light-emitting device and the parasitic capacitance and electric field caused by the difference in polarity cause the display color to vary depending on the viewing direction, and ghosting may occur.
When arranging light-emitting devices in a display device, by symmetrically installing the first and second arranged light-emitting devices, the parasitic capacitance and electric field generated by the difference in polarity are reduced, the asymmetrical light distribution is eliminated, and the color viewing angle is enhanced.
It eliminates the asymmetric light distribution of the light-emitting device, reduces parasitic capacitance and electric field, solves the problem of display color changing with viewing direction, reduces ghosting, and enhances color viewing angle.
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Figure CN117581377B_ABST
Abstract
Description
Technical Field
[0001] This disclosure applies to the field of display device technology, and for example relates to a display device using miniature light-emitting diodes (LEDs). Background Technology
[0002] Recently, display devices with excellent characteristics such as thinness and flexibility have been developed in the field of display technology. Currently, the main commercially available displays are liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays.
[0003] In one example, since the commercialization of red LEDs using GaAsP compound semiconductors in 1962, light-emitting diodes (LEDs), as well-known semiconductor light-emitting devices that convert electric current into light, have been used together with GaP:N-based green LEDs as light sources for images displayed in electronic devices, including information and communication devices.
[0004] Recently, these light-emitting diodes (LEDs) have been miniaturized and manufactured into micron-sized LEDs for use in pixel or planar lighting of display devices.
[0005] Sapphire used as a substrate for growing gallium nitride-based semiconductors has a tilted crystal surface. For example, an R-plane has a crystal surface tilted along the m-axis. Ordinary sapphire may have an R-plane as a growth plane. Because the R-plane has a surface tilted relative to the hexagonal prism crystal shape, the sapphire substrate and the gallium nitride-based semiconductor grown on the crystal surface of the sapphire substrate may have this tilt angle.
[0006] Alternatively, this tilt angle can also be formed when the light-emitting device is formed on a sapphire substrate as a gallium nitride-based semiconductor and then cut along the direction of the crystal surface of the sapphire substrate.
[0007] Therefore, when the light-emitting device is mounted on the wiring substrate in a general arrangement and emits light, each sub-pixel can be constructed with an asymmetrical light distribution relative to the direction connecting the two electrode pads, and each sub-pixel can constitute a display device.
[0008] Therefore, when a display device is formed by individual sub-pixels with asymmetrical light distribution, the color of the display may appear different depending on the viewing direction when viewed from the outside.
[0009] In addition, unexpected parasitic capacitance may occur due to the electric field formed by the polarity difference between the signal electrode and the common electrode of the light-emitting device.
[0010] Therefore, even when the electric field dissipates, the parasitic capacitance may still not be able to discharge normally, which may result in adjacent light-emitting devices turning on unexpectedly.
[0011] The corresponding effect may accumulate due to the total number of light-emitting devices used in the display device, and ultimately, ghosting may occur in the unit of the display product.
[0012] Therefore, a method is needed to solve this problem. Summary of the Invention
[0013] Technical issues
[0014] This disclosure aims to provide a display device using a semiconductor light-emitting device that can eliminate the bias light distribution of the light-emitting device caused by the crystallinity of the light-emitting device.
[0015] In addition, this disclosure aims to provide a display device using semiconductor light-emitting devices, which can solve the problem that when the display device is viewed from the outside, the color of the display appears different depending on the viewing direction.
[0016] In addition, this disclosure aims to provide a display device using semiconductor light-emitting devices that can reduce parasitic capacitance caused by polarity differences between light-emitting devices.
[0017] In addition, this disclosure aims to provide a display device using semiconductor light-emitting devices that can eliminate the electric field caused by the polarity difference between the light-emitting devices.
[0018] Furthermore, according to embodiments of this disclosure, this disclosure aims to provide a display device using a semiconductor light-emitting device that can visually enhance areas with weak colors when the display is viewed from one side, in order to correct color differences in the display perceived on the left and right sides.
[0019] Technical solution
[0020] A display device using light-emitting devices according to the present disclosure includes: a wiring substrate defining a plurality of unit pixel regions; wiring electrodes including a first wiring electrode and a second wiring electrode disposed on the wiring substrate; and each light-emitting device mounted in the respective unit pixel region to be electrically connected to the respective first wiring electrode and the second wiring electrode to form a respective sub-pixel, wherein the light-emitting device includes a first light-emitting device located in the first pixel region and mounted in a first arrangement, and a second light-emitting device located in a second pixel region adjacent to the first pixel region and mounted in a second arrangement symmetrical to the first arrangement.
[0021] According to the implementation method, the parasitic capacitance generated by the polarity difference between the first light-emitting device and the second light-emitting device can be reduced by the first arrangement and the second arrangement.
[0022] According to the embodiments, in the first arrangement and the second arrangement, the positions of the electrodes of the first light-emitting device and the second light-emitting device can be symmetrical to each other.
[0023] According to the implementation, the first wiring electrode corresponding to the first pixel region and the adjacent first wiring electrode corresponding to the second pixel region can be positioned symmetrically relative to each other around the center point between the first pixel region and the second pixel region.
[0024] According to the implementation method, the center point between the first pixel region and the second pixel region may correspond to the second wiring electrode.
[0025] According to the implementation, the first pixel region and the second pixel region can form a pair between the first wiring electrode and the first wiring electrode adjacent thereto.
[0026] According to the implementation method, the electric field generated by the polarity difference between the first light-emitting device and the second light-emitting device can be eliminated by the first arrangement and the second arrangement.
[0027] According to the embodiment, the side surface of each of the first light-emitting device and the second light-emitting device can be tilted to have a tilt angle.
[0028] According to the implementation method, through the first arrangement and the second arrangement, the first light-emitting device and the second light-emitting device can be tilted symmetrically to each other so as to have the same tilt angle in opposite directions.
[0029] According to the embodiments, each light-emitting device may include a first type of electrode and a second type of electrode, and has an asymmetric light distribution relative to the direction in which the first type of electrode and the second type of electrode are connected to each other.
[0030] According to the implementation method, the asymmetric light distribution can cancel each other out through the first arrangement and the second arrangement.
[0031] According to the implementation method, the first light-emitting device and the second light-emitting device can emit light of the same color.
[0032] A display device using light-emitting devices according to the present disclosure includes: a wiring substrate defining a plurality of unit pixel regions; wiring electrodes including a first wiring electrode and a second wiring electrode disposed on the wiring substrate; and each light-emitting device mounted in the respective unit pixel region to be electrically connected to the respective first wiring electrode and the second wiring electrode to form a respective sub-pixel, wherein the light-emitting device includes a first light-emitting device located in the first sub-pixel region and mounted in a first arrangement, and a second light-emitting device located in a second sub-pixel region adjacent to the first sub-pixel region and mounted in a second arrangement symmetrical to the first wiring electrode with respect to the first arrangement.
[0033] Beneficial effects
[0034] According to one embodiment of this disclosure, the following effects are obtained.
[0035] First, according to one embodiment of this disclosure, the bias light distribution of the light-emitting device caused by the crystallinity of the light-emitting device can cancel each other out. That is, the asymmetric light distribution of the light-emitting device can be eliminated.
[0036] Therefore, the problem that the colors of the display appear different depending on the viewing direction when the display device is viewed from the outside can be solved.
[0037] In addition, according to one embodiment of this disclosure, the parasitic capacitance generated by the polarity difference of the light-emitting device can be reduced.
[0038] In addition, it can reduce ghosting phenomena that may occur due to such parasitic capacitance.
[0039] In addition, according to one embodiment of this disclosure, the electric field generated by the polarity difference between light-emitting devices can be reduced.
[0040] Furthermore, according to one embodiment of this disclosure, when viewing the display from one direction, areas with weak colors can be visually enhanced to correct color differences between the left and right sides of the display. Therefore, an effect of enhanced color viewing angle can be achieved in the final product stage of the display device.
[0041] Furthermore, according to another embodiment of this disclosure, there are additional technical effects not mentioned herein. This will be understood by those skilled in the art from the full meaning of this document and the accompanying drawings. Attached Figure Description
[0042] Figure 1 This is a schematic diagram of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0043] Figure 2 This is a schematic diagram illustrating the sub-pixel arrangement of a display device using semiconductor light-emitting devices according to this example of the present disclosure.
[0044] Figure 3 This is a circuit diagram illustrating the sub-pixel arrangement of a display device using semiconductor light-emitting devices according to this example of the present disclosure.
[0045] Figure 4 This is a schematic diagram illustrating the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to a comparative example.
[0046] Figure 5 This is a circuit diagram showing the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to a comparative example.
[0047] Figure 6This is a schematic diagram illustrating the effect of the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0048] Figure 7 This is a plan view showing the arrangement of wiring electrodes in a display device using a semiconductor light-emitting device according to a comparative example.
[0049] Figure 8 This is a plan view showing the arrangement of wiring electrodes in a display device using a semiconductor light-emitting device according to this example of the present disclosure.
[0050] Figure 9 This is a schematic diagram illustrating a specific example of the subpixel arrangement of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0051] Figure 10 This is a schematic diagram illustrating another specific example of the subpixel arrangement of a display device using semiconductor light-emitting devices according to embodiments of the present disclosure.
[0052] Figure 11 It is shown schematically. Figure 9 and Figure 10 The diagram shows the arrangement of subpixels.
[0053] Figure 12 It shows the basis Figure 9 A schematic diagram of the process for forming sub-pixel arrangements.
[0054] Figure 13 This is a side view showing the various light-emitting devices of a display device using semiconductor light-emitting devices according to an embodiment of the present disclosure.
[0055] Figure 14 This is a schematic diagram showing the tilt angle of each light-emitting device in a display device using semiconductor light-emitting devices according to an embodiment of the present disclosure.
[0056] Figure 15 The crystal surface and crystal orientation of sapphire are schematically shown.
[0057] Figure 16 A side view is shown, illustrating the light-emitting device of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0058] Figure 17 A schematic diagram is shown, illustrating the tilt angle of the light-emitting device of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0059] Figure 18 This is a graph illustrating an example of the light distribution of a light-emitting device used in a display device employing a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0060] Figure 19 This is a graph illustrating another example of the light distribution of a light-emitting device used in a display device employing a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0061] Figure 20 show when Figure 18 or Figure 19 The uniform light distribution is shown when the bias light distributions cancel each other out. Detailed Implementation
[0062] Reference will now be made in detail to embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to denote the same or similar parts, and redundant descriptions will be omitted. The addition or interchange of the suffixes “module” and “unit” as used herein is for convenience in preparing this specification and is not intended to imply different meanings or functions. In describing the embodiments disclosed in this specification, related well-known techniques may not be described in detail so as not to obscure the subject matter of the embodiments disclosed in this specification. Furthermore, it should be noted that the drawings are for ease of understanding of the embodiments disclosed in this specification only and should not be construed as limiting the technical spirit disclosed in this specification.
[0063] Furthermore, although the accompanying drawings are described separately for simplicity, embodiments implemented by combining at least two or more drawings are also within the scope of this disclosure.
[0064] Additionally, when an element such as a layer, region, or module is described as being "on" another element, it will be understood that the element may be directly on the other element, or that there may be an intermediate element between them.
[0065] The semiconductor light-emitting devices mentioned in this article include concepts such as LEDs and micro LEDs, and can be used interchangeably with those terms.
[0066] Figure 1 This is a schematic diagram of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0067] Reference Figure 1 In the display device 10, each unit pixel region 101 can be divided on the wiring substrate 100, and a plurality of light-emitting devices 200: 210, 220 and 230 can be installed in such unit pixel regions 101.
[0068] In this respect, the individual light-emitting devices 210, 220, and 230 installed in the unit pixel region 101 can each substantially correspond to a sub-pixel. For example, three sub-pixels can be grouped together to form a single pixel. Figure 1 In the diagram, the three light-emitting devices 210, 220 and 230 can correspond to red, green and blue light-emitting devices, respectively.
[0069] Each of the light-emitting devices 210, 220, and 230 is electrically connected to a pair of electrode pads 130 and 140 / 131 and 141 / 132 and 142. In this case, as an example, Figure 1 The electrode pads 130, 131 and 132 (hereinafter referred to as the first electrode pads) arranged on one side can be connected to the first wiring electrodes (signal electrodes or data electrodes) 121, 122 and 123 respectively.
[0070] Additionally, electrode pads 140, 141, and 142 (hereinafter referred to as second electrode pads) arranged on the other side can be connected to the second wiring electrode (common electrode or scan electrode) 124. However, the reverse is also possible. Figure 1 In this design, due to the arrangement of electrodes and pads, signal electrodes 121, 122, and 123 and common electrode 124 are omitted.
[0071] In one example, in some cases, the first electrode pads 130, 131 and 132 may correspond to signal electrodes 121, 122 and 123 respectively, and the second electrode pads 140, 141 and 142 may correspond to the common electrode 124.
[0072] For the sake of description, the designations for electrode pads and wiring electrodes are used interchangeably. That is, electrode pads and wiring electrodes can be described using the same designations.
[0073] Therefore, a unit sub-pixel can be defined at the point where the first wiring electrodes 121, 122 and 123 intersect with the second wiring electrode 124.
[0074] In one example, when the first wiring electrodes 121, 122, and 123 are signal electrodes (or data electrodes), these first wiring electrodes 121, 122, and 123, or the first electrode pads 130, 131, and 132, can be connected to a TFT layer 120 on which thin-film transistors (TFTs) are disposed. Therefore, each of the light-emitting devices 210, 220, and 230 can be driven by a switching action caused by such a TFT layer 120.
[0075] exist Figure 1 In this diagram, TFT layer 120 is schematically shown as a single layer, but TFT layer 120 may include multiple TFT regions capable of performing switching operations. For example, each TFT region may include a gate electrode, a source electrode, a drain electrode, an insulating layer disposed therebetween, a through electrode that can be connected to the first wiring electrodes 121, 122, and 123 or the first electrode pads 130, 131, and 132, etc. Detailed description of this is omitted. Each of these TFT regions may be connected to each of the light-emitting devices 210, 220, and 230.
[0076] Multiple light-emitting devices 200: 210, 220 and 230 may be mounted to be electrically connected to wiring electrodes 121, 122, 123 and 124 to form individual sub-pixels.
[0077] As described above, these light-emitting devices 200 may include a red light-emitting device 210, a green light-emitting device 220, and a blue light-emitting device 230, and such three light-emitting devices 210, 220, and 230 may form respective sub-pixels and be repeatedly positioned on the wiring substrate 100. These light-emitting devices 210, 220, and 230 may include at least one of organic light-emitting devices and inorganic light-emitting devices. For example, light-emitting devices 210, 220, and 230 may be inorganic semiconductor light-emitting devices (light-emitting diodes; LEDs).
[0078] This semiconductor light-emitting device (LED) 200 may have a size in micrometer (μm) units. A micrometer (μm) size may mean that the width of at least one surface of the light-emitting device 200 is a size ranging from a few micrometers (μm) to several hundred micrometers.
[0079] The TFT layer 120 may be located on the substrate 110, and the insulating layer 150 may be coated on the TFT layer 120. This insulating layer 150 may be coated on the wiring electrodes 121, 122, 123 and 124, the electrode pads 130, 131, 132 / 140, 141 and 142, and the connection portions between the light-emitting devices 210, 220 and 230.
[0080] For example, the individual light-emitting devices 210, 220, and 230 can be separated from each other by the partition 160. In addition, the cover layer 170 can be located on the light-emitting devices 210, 220, and 230 and the partition 160.
[0081] As described above, the light-emitting devices 210, 220, and 230 can form individual sub-pixels and are repeatedly located on the wiring substrate 100. For example, individual pixel regions 101 can be repeatedly disposed on the wiring substrate 100.
[0082] In this respect, pixel region 101 can be repeatedly positioned along a line of data electrodes (first wiring electrodes) 121, 122, and 123 or a line of scan electrode (second wiring electrode) 124 in the vertical direction. For example, in Figure 1 In this configuration, the red light-emitting device 210, the green light-emitting device 220, and the blue light-emitting device 230 can be repeatedly positioned along the left-right direction. For example, the red light-emitting device in an adjacent pixel area can be located to the right of the blue light-emitting device 230.
[0083] In one example, another data electrode (first wiring electrode) line or scan electrode (second wiring electrode) line may be positioned in parallel to a data electrode (first wiring electrode) line or scan electrode (second wiring electrode) line (see [reference]). Figure 8 In this respect, the arrangement of light-emitting devices 210, 220, and 230 is the same as that of pixel region 102 (see pixel region 101). Figure 8 It can be located on an adjacent data electrode (first wiring electrode) line or a scan electrode (second wiring electrode) line.
[0084] In this configuration, light-emitting devices of the same color in adjacent pixel areas can be arranged adjacent to each other. For example, red light-emitting device 210, green light-emitting device 220, and blue light-emitting device 230 can be repeatedly positioned along the data electrode (first wiring electrode) line or the scan electrode (second wiring electrode) line, but light-emitting devices of the same color in a direction perpendicular to such data electrode (first wiring electrode) line or scan electrode (second wiring electrode) line can be repeatedly positioned.
[0085] In this regard, according to one embodiment of this disclosure, two adjacent light-emitting devices may have different arrangements. For example, see reference to... Figure 1 The red light-emitting device 210 and the green light-emitting device 220 adjacent to the red light-emitting device 210 can have different arrangements.
[0086] For example, in the red light-emitting device 210, a first type of electrode (e.g., an N-type electrode) may be located on the first wiring electrode 130, and in the green light-emitting device 220, a second type of electrode (e.g., a P-type electrode) may be located on the first wiring electrode 131. Such different arrangements can also be made in the green light-emitting device 220 and the blue light-emitting device 230.
[0087] That is, the red light-emitting device 210 and the green light-emitting device 220 adjacent to the red light-emitting device 210 can be arranged symmetrically with respect to the electrode positions of each light-emitting device 210 and 220.
[0088] In one example, as described above, the light-emitting device (e.g., red light-emitting device 210) located in a pixel region 101 and the light-emitting device (e.g., red light-emitting device 210) located in an adjacent pixel region 102 may be arranged symmetrically with respect to the electrode positions.
[0089] In other words, on the wiring substrate 100, a first light-emitting device 210 located in a first pixel region 101 and mounted in a first arrangement, and a second light-emitting device 210 located in a second pixel region 102 adjacent to such a first pixel region 101 and mounted in a second arrangement symmetrical with respect to the first arrangement can be positioned.
[0090] By using the first and second arrangements of the light-emitting devices 210 as described above, the parasitic capacitance generated by the polarity difference between the first and second light-emitting devices can be reduced.
[0091] Furthermore, the electric field generated by the polarity difference between the first and second light-emitting devices can be eliminated by the first and second arrangement of the light-emitting devices 210 as described above.
[0092] The light-emitting device 210 with such a different arrangement and its effects will be described in detail later.
[0093] Figure 2 This is a schematic diagram illustrating the sub-pixel arrangement of a display device using semiconductor light-emitting devices according to this example of the present disclosure. Additionally, Figure 3 This is a circuit diagram illustrating the sub-pixel arrangement of a display device using semiconductor light-emitting devices according to this example of the present disclosure.
[0094] Figure 4 This is a schematic diagram illustrating the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to a comparative example. Figure 5 This is a circuit diagram showing the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to a comparative example.
[0095] Reference Figure 2 This illustrates a state where the first light-emitting device 230a and the second light-emitting device 230b, which are adjacent to each other, are positioned in different arrangements (first arrangement and second arrangement). Additionally, the second light-emitting device 230b and the third light-emitting device 230c can also be positioned in different arrangements. (Refer to...) Figure 3 As can be seen, the light-emitting devices D1*, D2*, D3*, ..., Dn* can be connected to each other in an alternating and opposite arrangement.
[0096] For example, the first light-emitting device 230a and the third light-emitting device 230c can be positioned according to a first arrangement, and the second light-emitting device 230b located between the first light-emitting device 230a and the third light-emitting device 230c can be positioned according to a second arrangement.
[0097] In this respect, the first light-emitting device 230a, the second light-emitting device 230b, and the third light-emitting device 230c can all be light-emitting devices that emit light of the same color. For example, the first light-emitting device 230a, the second light-emitting device 230b, and the third light-emitting device 230c can all be blue light-emitting devices.
[0098] In this regard, Figure 2In the first arrangement, the N-type electrode 235 may be located on the left and the P-type electrode 237 may be located on the right. In each of the light-emitting devices 230a, 230b and 230c, the semiconductor layer 232 may be located on the substrate 231, and a first type electrode (e.g., N-type electrode 235) and a second type electrode (e.g., P-type electrode 237) may be positioned in contact with such semiconductor layer 232.
[0099] That is, each of the light-emitting devices 230a, 230b and 230c may include a substrate 231, a semiconductor layer 232, a first type electrode 235 and a second type electrode 237. In this respect, each of the light-emitting devices 230a, 230b and 230c may have a different arrangement relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other.
[0100] Reference Figure 2 Each of the light-emitting devices 230a, 230b, and 230c may have an asymmetrical light distribution a or b relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other. For example, the first light-emitting device 230a and the third light-emitting device 230c may have a light distribution a biased to the left. This may correspond to a first arrangement. Additionally, the second light-emitting device 230b located between the first light-emitting device 230a and the third light-emitting device 230c may have a light distribution b biased to the right. This may correspond to a second arrangement.
[0101] This may be due to the material properties of at least one of the substrate 231 and the semiconductor layer 232. For example, this phenomenon may occur due to the tilted shape of the crystal structure of at least one of the substrate 231 and the semiconductor layer 232. This will be described in detail later.
[0102] As a comparative example Figure 4 The illustration shows light-emitting devices 23a, 23b, and 23c having the same arrangement b and the resulting light distribution b. For example, light-emitting device 23c has a semiconductor layer 23c-2 located on substrate 23c-1, and includes a first type electrode 23c-3 and a second type electrode 23c-4 connected to the semiconductor layer 23c-2. (Refer to...) Figure 5 As can be seen, the light-emitting devices D1, D2, D3, ..., Dn are connected to each other in the same arrangement.
[0103] like Figure 4 As shown, when each of the light-emitting devices 23a, 23b, and 23c constitutes a sub-pixel while having a light distribution b that is asymmetrical relative to the direction connecting the first type electrode 23c-3 and the second type electrode 23c-4, and the sub-pixels constitute a display device, it is possible that when the display device is viewed from the outside, the color of the display appears different depending on the viewing direction.
[0104] In the polarity arrangement of the light-emitting devices 23a, 23b and 23c as described above, the first type electrode 23c-3 and the second type electrode 23c-4 are repeated in sequence, which may result in unintended parasitic capacitance due to the electric field formed by the polarity difference between the first type electrode 23c-3 and the second type electrode 23c-4 of each of the light-emitting devices 23a, 23b and 23c (or between the signal electrode / common electrode connected thereto).
[0105] Therefore, even when the electric field dissipates, the parasitic capacitance cannot be discharged normally, which may result in adjacent light-emitting devices being turned on unexpectedly. For example, when D3 is in the on state, D1 and D2, which should be in the off state, may unexpectedly remain in the on state. The corresponding effect can be accumulated by the total number of light-emitting devices 23a, 23b, and 23c, and ultimately, ghosting may occur in the cells of the display product.
[0106] However, as in this example of the present disclosure, this problem can be solved when adjacent light-emitting devices 230a, 230b and 230c are arranged differently relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other.
[0107] As an implementation method Figure 2 The diagram illustrates the state where the light distributions a and b of light-emitting devices 230a, 230b, and 230c are biased toward the N-type electrode 235. However, this is only an example, and not all light distributions of light-emitting devices 230a, 230b, and 230c are biased toward the N-type electrode 235. That is, in one example, the light distributions of light-emitting devices 230a, 230b, and 230c may be biased toward the P-type electrode 237.
[0108] Therefore, by arranging the first type of electrodes 235 connecting adjacent light-emitting devices 230a, 230b, and 230c to the second type of electrodes 237 in a different direction, these bias light distributions a and b can cancel each other out. That is, the problem that the color of the display appears different depending on the viewing direction when the display device is viewed from the outside can be solved.
[0109] By arranging the light-emitting devices 230a, 230b, and 230c in a first and second manner, the parasitic capacitance generated by the polarity difference between the light-emitting devices 230a, 230b, and 230c can be reduced.
[0110] Furthermore, through this first and second arrangement of the light-emitting devices 230a, 230b and 230c, the electric field generated by the polarity difference between the light-emitting devices 230a, 230b and 230c can be eliminated.
[0111] Figure 6This is a schematic diagram illustrating the effect of the sub-pixel arrangement of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0112] Reference Figure 6 Light-emitting devices 230b and 230c, which are mounted on the wiring substrate 100 and form sub-pixels, can be configured.
[0113] In this regard, refer to Figure 6 The lower (B), as shown above. Figure 1 As described, the wiring substrate 100 may include wiring electrodes 123 and 124, which include a first wiring electrode 123 and a second wiring electrode 124 disposed on the wiring substrate 100, and each of the light-emitting devices 230b and 230c may be mounted to be electrically connected to the first wiring electrode 123 and the second wiring electrode 124 in a respective unit pixel region. That is, Figure 6 The subpixel arrangement in the middle can correspond to Figure 1 The case of the blue light-emitting device 230 in the middle.
[0114] In this regard, let's refer to... Figure 6 In (A) and (B), light-emitting devices 230b and 230c may include a first light-emitting device 230b located in a first pixel region and mounted in a first arrangement, and a second light-emitting device 230c located in a second pixel region adjacent to the first pixel region and mounted in a second arrangement symmetrical to the first arrangement.
[0115] Each of the first light-emitting device 230b and the second light-emitting device 230c may include a substrate 231, a semiconductor layer 232, a first type electrode 235, and a second type electrode 237. In this respect, the first light-emitting device 230b and the second light-emitting device 230c may be arranged differently relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other.
[0116] Therefore, the light distribution a biased to one side by the first arrangement and the light distribution b biased to the other side by the second arrangement can be combined to form an unbiased and center-facing light distribution "c". That is, the asymmetric light distribution can be eliminated by the first arrangement of the first light-emitting device 230b and the second arrangement of the second light-emitting device 230c as described above.
[0117] In this regard, as described above, the first light-emitting device 230b and the second light-emitting device 230c can be light-emitting devices that emit light of the same color located in adjacent pixel areas (e.g., blue light-emitting devices).
[0118] When a positive voltage is applied to a light-emitting diode (LED) with a PN junction structure, charges and holes recombine in the region where the P and N regions meet to emit light. In this respect, the region emitting the largest amount of light is not the center of the region where the P and N regions meet, but rather the biased region. Therefore, when a display is manufactured with this type of LED, the display's color can appear different depending on the orientation of the display.
[0119] However, as described above, when the first arrangement of the first light-emitting device 230b and the second arrangement of the second light-emitting device 230c are symmetrical to each other, the color difference perceived on the left and right sides of the display when viewed from one side can be compensated by visually enhancing the area with weak color. Therefore, an effect of enhanced color viewing angle can be obtained in the final product stage of the display device.
[0120] Furthermore, the electric field generated by the polarity difference between the first light-emitting device 230b and the second light-emitting device 230c can be removed by symmetrically arranging the first light-emitting device 230b and the second light-emitting device 230c, thereby preventing the generation of parasitic capacitance. In addition, the ghosting phenomenon that may occur due to such parasitic capacitance can be improved.
[0121] Figure 7 This is a plan view showing the arrangement of wiring electrodes in a display device using a semiconductor light-emitting device according to a comparative example.
[0122] Figure 7 Showing the above Figure 4 The arrangement of the wiring electrodes corresponding to the arrangement of the light-emitting devices 23a, 23b, and 23c. (Refer to...) Figure 7 The diagram shows some pixel regions 24 and 25, and signal electrodes 24N and 24N+1 are arranged vertically on one side (i.e., the left side) of each pixel region (e.g., 24).
[0123] In addition, it can be seen that for the entire arrangement of the three light-emitting devices, the common electrode 27 is located on the right side of each pixel area 24.
[0124] Reference Figure 7 Two adjacent pixel regions 24 and 25 have the same arrangement relative to signal electrodes 24N and 24N+1 and the common electrode 27. Therefore, as referenced Figure 4 As described, when the respective light-emitting devices mounted in the same arrangement relative to these signal electrodes 24N and 24N+1 and the common electrode 27 constitute each sub-pixel in a state with an asymmetric light distribution b, and the respective sub-pixels constitute a display device, it is possible that when the display device is viewed from the outside, the color of the display appears different depending on the viewing direction.
[0125] Figure 8This is a plan view showing the arrangement of wiring electrodes in a display device using a semiconductor light-emitting device according to this example of the present disclosure.
[0126] Figure 8 Showing the above Figure 2 The arrangement of wiring electrodes corresponding to the arrangement of light-emitting devices 230a, 230b, and 230c. (Refer to...) Figure 8 This shows some pixel regions 101 and 102.
[0127] The center point 280 may be located between two pixel regions 101 and 102, and this center point 280 may correspond to the second wiring electrode 124 described above. In addition, as mentioned above, the center point 280 may be connected to the second pads 140, 141 and 142.
[0128] Thus, the two pixel regions 101 and 102 can be arranged symmetrically about each other around the center point 280. That is, the second wiring electrode 124 can be located between these two pixel regions 101 and 102.
[0129] As described above, three light-emitting devices 210, 220, and 230 can be installed in a pixel region 101 to form a corresponding sub-pixel. In this respect, since the two pixel regions 101 and 102 are arranged symmetrically about the center point 280 relative to each other, the three light-emitting devices 210, 220, and 230 located in pixel region 101 can be respectively arranged symmetrically with respect to the three light-emitting devices 210, 220, and 230 located in pixel region 102.
[0130] In this respect, the corresponding light-emitting devices 210, 220 and 230 can be arranged as signal electrodes through the vias 260, and signals can be supplied from these signal electrodes. In addition, the center point 280 connected to the second wiring electrode 124 can also correspond to the via.
[0131] That is, when taking a light-emitting device that renders a single color (e.g., a blue light-emitting device 230) as an example, a first light-emitting device 230b located in the first pixel region 101 and mounted in a first arrangement can be set (see...). Figure 6 And a second light-emitting device 230c located in a second pixel region 102 adjacent to the first pixel region 101 and mounted in a second arrangement symmetrical to the first arrangement (see...). Figure 6 ).
[0132] Additionally, pixel regions 101 and 102 can be paired between adjacent first wiring electrodes 270N, 270N+1, etc. For example... Figure 8As shown, the first wiring electrodes 270N, 270N+1, etc., can be located on both sides of a pair of pixel regions 101 and 102. In one example, considering adjacent pixel regions, the two first wiring electrodes 270N and 270N+1 can be arranged close to each other and parallel to each other.
[0133] Therefore, since the three light-emitting devices 210, 220, and 230 located in pixel region 101 and the three light-emitting devices 210, 220, and 230 located in pixel region 102 are symmetrically positioned relative to each other around the second wiring electrode 124, a light-emitting device and its counterpart are configured such that electrodes of the same polarity face each other, thereby sharing a via. Therefore, the number of vias used to supply power to the light-emitting devices 210, 220, and 230 is related to... Figure 7 Compared to the previous situation, this can be reduced by approximately 50%, and the number of scanning electrodes (second wiring electrodes) 124 is... Figure 7 The number of cases in the middle can also be reduced compared to the middle.
[0134] Vias are caused by inductive components, thus there is a possibility that vias may mix with signal noise components. Therefore, it is advantageous to minimize the number of vias in the circuit board. Therefore, according to embodiments of this disclosure, signal stabilization can be further achieved by reducing the number of vias. Furthermore, the difficulty of manufacturing the circuit board can be reduced, thereby reducing manufacturing time and costs.
[0135] In addition, as described above, the electric field formed by the polarity difference between the light-emitting devices 230b and 230c can be removed by the symmetrical arrangement of the first light-emitting device 230b and the second light-emitting device 230c, thereby preventing the occurrence of parasitic capacitance.
[0136] Typically, capacitance exhibits a property inversely proportional to distance. Figure 8 The circuit pattern shown can reduce the capacitance by about half because the distance between the first wiring electrodes 270N, 270N+1, etc. is approximately doubled relative to the pixel regions 101 and 102.
[0137] Figure 9 This is a schematic diagram illustrating a specific example of the subpixel arrangement of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0138] Reference Figure 9 This illustrates a state where light-emitting devices 230a, 230b, 230c, and 230d are symmetrically arranged and mounted on the wiring substrate 100. This corresponds to... Figure 6 The light-emitting devices shown are arranged in a parallel manner.
[0139] As described above, light-emitting devices 230a, 230b, 230c, and 230d may have asymmetrical light distributions a and b relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other. Furthermore, light-emitting devices 230a, 230b, 230c, and 230d may have asymmetrical light distributions a and b relative to the direction in which the first electrode pad 132 and the second electrode pad 142 are connected to each other (see...). Figure 2 ).
[0140] For example, the first light-emitting device 230a and the third light-emitting device 230c may have a light distribution biased to the left. This corresponds to a first arrangement. Additionally, the second light-emitting device 230b located between the first light-emitting device 230a and the third light-emitting device 230c, and the fourth light-emitting device 230d located to the right of the third light-emitting device 230c, may have a light distribution biased to the right. This corresponds to a second arrangement.
[0141] This may be due to the material properties of at least one of the substrate 231 and the semiconductor layer 232. For example, this phenomenon may occur due to the tilted shape of the crystal structure of at least one of the substrate 231 and the semiconductor layer 232. This will be described in detail later.
[0142] Figure 9 The diagram illustrates the state in which each of the light-emitting devices 230a, 230b, 230c, and 230d has a tilted crystal structure. Specifically, considering a region (hereinafter, first region 230) where two adjacent pixels form a pair, the first light-emitting device 230a of one pixel and the second light-emitting device 230b of another pixel can be tilted symmetrically to each other to have the same tilt angle in opposite directions. For example, the first light-emitting device 230a and the second light-emitting device 230b can be tilted in directions away from each other. Furthermore, in the second region 231 adjacent to the first region 230, the third light-emitting device 230c and the fourth light-emitting device 230d of another pixel can be tilted symmetrically to each other to have the same tilt angle in opposite directions.
[0143] Figure 10 This is a schematic diagram illustrating another specific example of the subpixel arrangement of a display device using semiconductor light-emitting devices according to embodiments of the present disclosure.
[0144] Reference Figure 10 This illustrates a state where light-emitting devices 230e, 230f, 230g, and 230h are symmetrically arranged and mounted on the wiring substrate 100. This corresponds to... Figure 6 The light-emitting devices shown are arranged in a parallel manner.
[0145] As described above, the light-emitting devices 230e, 230f, 230g, and 230h may have asymmetrical light distributions a and b relative to the direction in which the first type electrode 235 and the second type electrode 237 are connected to each other. Furthermore, the light-emitting devices 230e, 230f, 230g, and 230h may have asymmetrical light distributions a and b relative to the direction in which the first electrode pad 132 and the second electrode pad 142 are connected to each other (see...). Figure 2 ).
[0146] Figure 10 The diagram illustrates the state in which each of the light-emitting devices 230e, 230f, 230g, and 230h has a tilted crystal structure. Specifically, considering a region (hereinafter, third region 232) where two adjacent pixels form a pair, the fifth light-emitting device 230e of one pixel and the sixth light-emitting device 230f of another pixel can be tilted symmetrically to each other to have the same tilt angle in opposite directions. For example, the fifth light-emitting device 230e and the sixth light-emitting device 230f can be tilted in a direction that brings them closer to each other. Furthermore, in the fourth region 233 adjacent to the third region 232, the seventh light-emitting device 230g and the eighth light-emitting device 230h of another pixel can be tilted symmetrically to each other to have the same tilt angle in opposite directions.
[0147] Figure 11 It is shown schematically. Figure 9 and Figure 10 The diagram shows the arrangement of subpixels.
[0148] Figure 11 (a) schematically shows in Figure 9 The first light-emitting device 230a and the second light-emitting device 230b in the first region 230 are tilted in a direction away from each other.
[0149] in addition, Figure 11 (b) schematically shows in Figure 10 The third region 232 shows a pair of fifth light-emitting devices 230e and sixth light-emitting devices 230f tilted in the direction of approaching each other.
[0150] As described above, when the light-emitting devices in adjacent pixels are paired and symmetrically positioned relative to each other, the bias light distributions a and b caused by the crystal structure of the light-emitting devices can cancel each other out. That is, the problem that the color of the display appears different depending on the viewing direction when the display device is viewed from the outside can be solved.
[0151] Figure 12 It shows the basis for formation Figure 9 A schematic diagram of the sub-pixel arrangement process.
[0152] Reference Figure 12Briefly describe examples of methods for transferring light-emitting devices in different arrangements.
[0153] For example, light-emitting devices 230a and 230c can be transferred first to electrode pads in odd-numbered rows #1, #3, etc. of the wiring substrate, and then light-emitting devices 230b and 230d can be transferred to electrode pads in even-numbered rows #2, #4, etc. of the wiring substrate after rotating the position of the light-emitting devices by 180 degrees.
[0154] The light-emitting devices 230a to 230d can be transferred from their state on the wafer 500 to the transfer substrate 410, and then to the wiring substrate. In this regard, the transfer substrate 410 can be, for example, blue adhesive tape.
[0155] First, the light-emitting devices 230a and 230c can be transferred to the transfer substrate 410 in the arrangement shown in ① above (reference point M of wafer 500 is located on the left).
[0156] Subsequently, the light-emitting devices 230a and 230c transferred to the transfer substrate 410 can be transferred to the electrode pads in the odd-numbered rows #1, #3, etc. of the wiring substrate.
[0157] Subsequently, with the wafer 500 rotated 180 degrees as shown in ② below (the reference point M of the wafer 500 is on the right), the light-emitting devices 230b and 230d can be transferred to the transfer substrate 410.
[0158] Subsequently, the light-emitting devices 230b and 230d transferred to the transfer substrate 410 can be transferred to the electrode pads in the even-numbered rows #2, #4, etc. of the wiring substrate.
[0159] Through this process, it has the following properties: Figures 9 to 11 The light-emitting devices 230a to 230h arranged as shown can be transferred onto a wiring substrate.
[0160] Figure 13 This is a side view showing the various light-emitting devices of a display device using semiconductor light-emitting devices according to an embodiment of the present disclosure. Figure 14 This is a schematic diagram showing the tilt angle of each light-emitting device in a display device using semiconductor light-emitting devices according to an embodiment of the present disclosure.
[0161] Figure 13 This is an enlarged view showing the side surface of the blue light-emitting device 230. Figure 13 The sapphire substrate, which occupies most of the thickness of the blue light-emitting device 230, can be shown. For example... Figure 14 As shown, the tilt angle α of the blue light-emitting device 230 can be approximately 10 degrees. Additionally, as an example, the thickness t of the blue light-emitting device 230 can be 80 μm.
[0162] However, the gallium nitride-based semiconductor layer on the sapphire substrate can have the same or similar tilt angle. In some cases, the sapphire substrate is removed after the light-emitting device is manufactured. In this case, the gallium nitride-based semiconductor layer, rather than the substrate, in the light-emitting device can have a tilt angle, as described above.
[0163] Figure 15 The crystal surface and crystal orientation of sapphire are schematically shown. Sapphire can be used as a growth substrate for light-emitting devices made from gallium nitride-based semiconductors.
[0164] As shown, sapphire has a tilted crystal surface. As an example, the R-plane has a crystal surface tilted along the m-axis. Ordinary sapphire may have the R-plane as its growth plane. (See reference...) Figure 15 Since the R-plane is tilted relative to the hexagonal prism crystal shape, the sapphire substrate and the gallium nitride-based semiconductor grown on the crystal surface of the sapphire substrate can have this tilt angle.
[0165] Alternatively, this tilt angle can also be formed when the light-emitting device is formed on a sapphire substrate as a gallium nitride-based semiconductor and then cut along the direction of the crystal surface of the sapphire substrate.
[0166] Figure 16 A side view is shown, illustrating the light-emitting device of a display apparatus using a semiconductor light-emitting device according to an embodiment of the present disclosure. Additionally, Figure 17 A schematic diagram is shown, illustrating the tilt angle of the light-emitting device of a display device using a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0167] Reference Figure 16 and Figure 17 The light-emitting devices used in a display can have various tilt angles. As an example, Figure 16 (A) and Figure 17 The light-emitting device shown in (A) may have a tilt angle of 5 degrees or less in one direction.
[0168] in addition, Figure 16 (B) and Figure 17 The light-emitting device shown in (B) can be used with Figure 16 (A) and Figure 17 The light-emitting device shown in (A) has a tilt angle equal to or less than 12 degrees in the opposite direction.
[0169] also, Figure 16 (C) and Figure 17 The light-emitting device shown in (C) can be used with Figure 16 (B) and Figure 17The light-emitting devices shown in (B) have a tilt angle of equal to or less than 10 degrees in the same direction.
[0170] Therefore, the transverse cross-section of the light-emitting device has a parallelogram structure that is tilted to one side, so as described above, the light-emitting device can have a non-uniform and biased light-emitting pattern relative to the direction perpendicular to the surface.
[0171] Figure 18 This is a graph illustrating an example of the light distribution of a light-emitting device used in a display device employing a semiconductor light-emitting device according to an embodiment of the present disclosure. Figure 19 This is a graph illustrating another example of the light distribution of a light-emitting device used in a display device employing a semiconductor light-emitting device according to an embodiment of the present disclosure.
[0172] Figure 18 and Figure 19 Both figures show the light intensity measured along the long axis (x-axis) of the light-emitting device. That is, the center of the long axis corresponds to 0 degrees, and the light intensity is shown on the left and right sides.
[0173] Figure 18 The light distribution of the corresponding red, green, and blue light-emitting devices is shown. As can be seen, the light distribution is asymmetrical around the center on the left and right sides.
[0174] Reference Figure 18 This shows the light distribution with higher intensity in part A on the right, based on 0 degrees. Similarly, refer to... Figure 19 The diagram shows the light distribution with higher light intensity in part B on the right, based on 0 degrees.
[0175] Figure 20 show when Figure 18 or Figure 19 The uniform light distribution is shown when the bias light distributions cancel each other out. That is, referring to... Figure 20 It can be seen that, as Figure 18 The light distribution in the reference is based on the reference. Figures 9 to 11 The arrangement of the light-emitting devices is homogenized as described.
[0176] Therefore, when the light-emitting devices in adjacent pixels are paired and symmetrically positioned relative to each other, the bias light distributions a and b caused by the crystal structure of the light-emitting devices can cancel each other out, thereby achieving a uniform light distribution.
[0177] Therefore, it can also solve the problem that the colors of the display appear different depending on the viewing direction when the display device is viewed from the outside.
[0178] The above description is merely an example of the technical concept of this disclosure. Those skilled in the art will be able to make various modifications and changes without departing from the essential characteristics of this disclosure.
[0179] Therefore, the embodiments disclosed herein are not intended to limit the technical concept of this disclosure, but are merely descriptions, and the scope of the technical concept of this disclosure is not limited by these embodiments.
[0180] The scope of protection of this disclosure should be interpreted by the following claims, and all technical concepts within the equivalent scope should be interpreted as being included within the scope of this disclosure.
[0181] Industrial applicability
[0182] According to this disclosure, a display device using semiconductor light-emitting devices such as micro LEDs can be provided.
Claims
1. A display device using a light-emitting device, the display device comprising: A wiring substrate, wherein a plurality of unit pixel regions are defined therein, wherein the plurality of unit pixel regions include a first pixel region and a second pixel region; Wiring electrodes, the wiring electrodes including a first wiring electrode and a second wiring electrode disposed on the wiring substrate; and Multiple light-emitting devices are mounted in the multiple unit pixel regions and electrically connected to the first wiring electrode and the second wiring electrode to form a sub-pixel. The plurality of light-emitting devices include: A first light-emitting device, the first light-emitting device being disposed in the first pixel region and mounted in a first arrangement; and A second light-emitting device is disposed in the second pixel region adjacent to the first pixel region and mounted in a second arrangement. The side surface of the first light-emitting device includes a first side and a second side inclined toward a first direction, and the side surface of the second light-emitting device includes a third side and a fourth side inclined toward a second direction opposite to the first direction.
2. The display device according to claim 1, wherein The first arrangement and the second arrangement reduce the parasitic capacitance generated by the polarity difference between the first light-emitting device and the second light-emitting device.
3. The display device according to claim 1, wherein In the first arrangement and the second arrangement, the positions of the electrodes of the first light-emitting device and the second light-emitting device are symmetrical to each other.
4. The display device according to claim 1, wherein The first wiring electrode corresponding to the first pixel region and the adjacent first wiring electrode corresponding to the second pixel region are symmetrically positioned with respect to the center point between the first pixel region and the second pixel region.
5. The display device according to claim 4, wherein, The center point between the first pixel region and the second pixel region corresponds to the second wiring electrode.
6. The display device according to claim 1, wherein, The first pixel region and the second pixel region form a pair between the first wiring electrode and the first wiring electrode adjacent to it.
7. The display device according to claim 1, wherein, The electric field generated by the polarity difference between the first light-emitting device and the second light-emitting device is eliminated by the first arrangement and the second arrangement.
8. The display device according to claim 1, wherein, Each light-emitting device includes a first type of electrode and a second type of electrode, and has an asymmetric light distribution relative to the direction connecting the first type of electrode and the second type of electrode.
9. The display device according to claim 8, wherein, The asymmetric light distribution is eliminated by the first arrangement and the second arrangement.
10. The display device according to claim 1, wherein, The first light-emitting device and the second light-emitting device emit light of the same color.
11. A display device, the display device comprising: A wiring substrate having multiple pixel regions; A first wiring electrode and a second wiring electrode are disposed on the wiring substrate; as well as Multiple light-emitting elements, each electrically connected to the first wiring electrode and the second wiring electrode, to form a sub-pixel within a corresponding pixel region. The plurality of light-emitting elements include: A first light-emitting element, the first light-emitting element being located in a first sub-pixel region; and The second light-emitting element is located in a second sub-pixel region adjacent to the first sub-pixel region. The side surface of the first light-emitting element includes a first side and a second side inclined toward a first direction, and The side surface of the second light-emitting element includes a third side and a fourth side that are inclined toward a second direction opposite to the first direction.
12. The display device according to claim 11, wherein, The first light-emitting element is mounted in a first arrangement and the second light-emitting element is mounted in a second arrangement, and The first arrangement and the second arrangement reduce the parasitic capacitance generated by the polarity difference between the first light-emitting element and the second light-emitting element.
13. The display device according to claim 11, wherein, The first pixel region and the second pixel region form a pair between the first wiring electrode and the first wiring electrode adjacent to it.
14. The display device according to claim 12, wherein, The electric field generated by the polarity difference between the first light-emitting element and the second light-emitting element is eliminated by the first arrangement and the second arrangement.
15. The display device according to claim 11, wherein, The distance between the first side of the first light-emitting element and the third side of the second light-emitting element increases as they move further away from the wiring substrate.
16. The display device according to claim 11, wherein, The first light-emitting element and the second light-emitting element emit light of the same color.
17. The display device according to claim 11, wherein, The second electrode of the first light-emitting element in the first pixel region and the second electrode of the second light-emitting element in the second pixel region are electrically connected to each other at the midpoint between the first light-emitting element and the second light-emitting element.
18. The display device according to claim 11, wherein, The distance between the first side of the first light-emitting element and the third side of the second light-emitting element decreases as they move further away from the wiring substrate.
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