Substrate processing device

Abstract

The substrate processing apparatus of the present invention is an apparatus for processing substrates. The substrate processing apparatus includes a processing chamber, a back chamber, a mask, and a rotation support mechanism. The rotation support mechanism has a rotation axis and a substrate holding portion. The rotation support mechanism rotates the substrate holding portion, which supports the substrate, between a horizontal transport position and a film deposition upright position. In the horizontal transport position, the substrate holding portion supports the substrate in a horizontal direction so that the substrate can move in the horizontal direction via the transport port. In the film deposition upright position, the substrate holding portion supports the substrate such that the substrate is opposite the mask when the substrate is surface-treated. In the rotational direction of the substrate holding portion from the horizontal transport position to the film deposition upright position, the position of the center of gravity of the substrate holding portion in the film deposition upright position does not exceed the position directly above the rotation axis in the vertical direction.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus. In particular, this invention relates to a substrate processing apparatus used in film deposition processes such as deposition, sputtering, CVD, and heat treatment, where the substrate is processed in a vertical (film formation upright position). Background Technology

[0002] In the fields of semiconductor devices and flat panel displays (FPDs), sputtering or deposition is used as a method for forming various thin films on a substrate (the object being processed). In a sputtering apparatus, a mask and a substrate are positioned opposite a target mounted on a cathode within a chamber maintaining a reduced pressure atmosphere, and a film is formed on the substrate. In a deposition apparatus, a mask is positioned between a deposition source and a substrate within a chamber maintaining a reduced pressure atmosphere, and a film is formed on the substrate.

[0003] Conventionally, as disclosed in Patent Document 1, a rotary support mechanism is known that supports and rotates a substrate while it is positioned between a horizontal transport position and a film-forming upright position. The rotary support mechanism includes a substrate holding portion that holds the substrate and a rotation shaft that rotates the substrate holding portion. In a substrate processing apparatus equipped with such a rotary support mechanism, the substrate holding portion supports the substrate that has been horizontally transported into the chamber. The rotation shaft rotates the substrate holding portion, placing it in a vertical position. Thus, the substrate is in a substantially vertical upright position. During film formation, vertical film formation is performed on the substrate while it is vertically upright together with the substrate holding portion.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2010-165571

[0005] In a rotational operation that involves changing the position of the substrate from a horizontal transport position to a film-forming upright position, thereby making the substrate substantially vertical, the center of gravity of the substrate supported by the substrate holding part and the center of gravity of the substrate holding part shift. Along with this shift in the center of gravity, the position of the substrate and the relative positions between the components constituting the rotational support mechanism (hereinafter referred to as structural components) sometimes change. In recent years, with the increasing size of substrates, the weight of the rotational support mechanism that rotates the substrate has increased, and the positional changes of the components caused by the shift in the center of gravity, as described above, have become non-negligible.

[0006] In particular, when the position of structural components changes with the drive of the rotary support mechanism, impacts are generated between the structural components, which may produce particles.

[0007] Furthermore, due to the increased size of the substrate, the position of the structural components changes significantly away from the rotation axis when driven by the rotary support mechanism. This leads to issues such as reduced substrate alignment accuracy, changes in the distance between the film deposition source and the substrate, and the resulting film thickness not meeting the desired thickness. Additionally, when the position of the structural components changes due to rotational drive, leading to reduced alignment accuracy, the components may come into contact with each other, making it difficult to maintain the necessary potential. Therefore, it may be impossible to maintain the required film deposition conditions.

[0008] Thus, the operation of rotating the substrate between the horizontal transport position and the film-forming upright position generates displacement and impact between structural components, which may reduce the yield in FPD manufacturing. Summary of the Invention

[0009] The present invention was made in view of the above circumstances, and it aims to achieve the following objectives.

[0010] 1. By changing the position of the substrate from a horizontal transport position to a film-forming upright position, the impact generated on the structural components constituting the rotation support mechanism is suppressed during the rotation operation in which the substrate is rotated approximately vertically upright.

[0011] 2. Suppress changes in film formation conditions caused by substrate rotation.

[0012] 3. Inhibit the formation of particles.

[0013] 4. Improve workability.

[0014] The inventors, through in-depth research into the causes of displacement and impact between structural components when using a rotary support mechanism for rotary drive, noted that such displacement and impact between structural components may occur due to the shift of the center of gravity of the rotary support mechanism.

[0015] Specifically, when the substrate holding portion is in the horizontal transport position, the center of gravity of the substrate holding portion is located on a line extending approximately horizontally as viewed from the rotation axis. When the rotation axis begins to rotate, the substrate holding portion supporting the substrate starts to rotate from the horizontal transport position to an upright position and gradually approaches the film deposition upright position. The position of the center of gravity of the substrate holding portion also moves with the rotation axis. Before the substrate holding portion reaches the film deposition upright position, the position of the center of gravity of the substrate holding portion supporting the substrate is located on a line extending vertically from the rotation axis (hereinafter referred to as the vertical direction line). In other words, with the rotation axis, the position of the center of gravity of the substrate holding portion supporting the substrate moves across the vertical direction line. When the substrate holding portion reaches the film deposition upright position, the rotation of the substrate holding portion stops. At this time, viewed from the rotation axis, the position of the center of gravity of the substrate holding portion in the film deposition upright position is on the opposite side of the center of gravity of the substrate holding portion in the horizontal transport position.

[0016] In the operation of such a rotary support mechanism, as the rotation axis rotates, the center of gravity of the substrate holding portion of the supporting substrate moves horizontally across a line extending vertically from the rotation axis. Therefore, when the rotary support mechanism is viewed in the direction in which the rotation axis extends, the direction of the torque generated on the rotation axis changes from clockwise to counterclockwise as the center of gravity of the substrate holding portion of the supporting substrate moves. Alternatively, when the rotary support mechanism is viewed in the direction opposite to the aforementioned direction in which the rotation axis extends, the direction of the torque generated on the rotation axis changes from counterclockwise to clockwise as the center of gravity of the substrate holding portion of the supporting substrate moves.

[0017] The inventors discovered that, since the center of gravity of the substrate holding portion supporting the substrate moves across a line extending vertically from the rotation axis, in other words, the direction of the torque generated on the rotation axis changes from one direction to another, displacement and impact occur between the structural components.

[0018] In particular, with the increase in the size of the substrate, the distance between the center of gravity of the substrate holder supporting the large substrate and the center of rotation of the rotation axis also increases. Therefore, in the rotational drive that rotates the substrate holder, the torque generated on the rotation axis also increases. This is believed to increase the amount of displacement and the magnitude of impact between structural components. Furthermore, in the vacuum atmosphere where film deposition and heat treatment are performed, the structural components of the rotating support mechanism undergo thermal deformation. It is difficult to practically measure the offset and gaps between structural components caused by thermal deformation. It is believed that the offset and gaps generated between such components affect the increase in the amount of displacement and the magnitude of impact between structural components.

[0019] Therefore, the inventors believe that as long as a structure that achieves the following points can be obtained, displacement and impact between structural components constituting the rotary support mechanism, including the substrate holding portion, can be suppressed.

[0020] • Suppresses load variations generated on the substrate holding portion.

[0021] • Suppress backlash in the drive gear that constitutes the reducer that imparts rotational force to the rotating shaft.

[0022] • Suppress the torsion generated on the rotating axis.

[0023] • Suppresses deformation such as deflection of the substrate holding part.

[0024] • Suppress variations in the clearance between structural components of the rotating support mechanism.

[0025] • Suppresses misalignment between structural components of the rotating support mechanism.

[0026] • Suppresses movement of the substrate holding part across a line extending vertically from the rotation axis.

[0027] One aspect of the present invention relates to a substrate processing apparatus, comprising: a processing chamber for performing surface treatment on the substrate; a back chamber adjacent to the processing chamber and having a transport port through which the substrate passes, and supporting the substrate during surface treatment in the processing chamber; a mask disposed within the back chamber and erected opposite to the processing chamber; and a rotation support mechanism having a rotation axis rotatable about a rotation center and a substrate holding portion mounted on the rotation axis and capable of supporting the substrate within the back chamber, the rotation support mechanism being used to rotate the substrate holding portion, on which the substrate is supported, between a horizontal transport position and a film-forming upright position. In the horizontal transport position, the substrate holding portion supports the substrate in a horizontal direction, allowing the substrate to move horizontally via the transport port. In the film-forming upright position, the substrate holding portion supports the substrate such that the substrate is opposite to the mask during surface treatment of the substrate. In the rotational direction of the substrate holding portion from the horizontal transport position to the film-forming upright position, the position of the center of gravity of the substrate holding portion in the film-forming upright position will not exceed the position directly above the rotation axis in the vertical direction.

[0028] In other words, even if a rotational drive is performed to rotate the substrate holding part from the horizontal transport position to the film-forming upright position, the center of gravity of the substrate holding part in the film-forming upright position will not be located in the horizontal direction beyond the line extending from the rotation axis in the vertical direction in the rotation direction.

[0029] Furthermore, in the rotation direction, the center of gravity of the substrate holding part does not move in the horizontal direction by crossing a line extending vertically from the rotation axis.

[0030] During the rotation operation of the substrate holding section, the range of movement between the center of gravity of the substrate holding section in the horizontal transport position and the center of gravity of the substrate holding section in the vertical film formation position will not cross a line extending vertically from the rotation axis.

[0031] Furthermore, in the upright position for film formation, the center of gravity of the substrate holding portion is located horizontally directly above the rotation axis in the vertical direction, or slightly forward of the position directly above the rotation axis in the rotational direction. Here, "slightly forward" means a position slightly less than the position of a line (90°) extending vertically from the rotation axis.

[0032] According to the above structure, during the rotation drive of the substrate holder from the horizontal transport position to the film-forming upright position, the magnitude of the torque acting on the rotation axis due to the weight of the substrate holder changes with the rotation of the substrate holder. However, the position of the center of gravity of the substrate holder in the horizontal direction will not move across the line extending from the rotation axis in the vertical direction, and will not exceed the position directly above the rotation axis in the vertical direction.

[0033] Therefore, even if the magnitude of the torque acting on the rotation axis changes, the direction of the torque acting on the rotation axis during rotation between the horizontal transport position and the film-forming upright position will not reverse. That is, during the rotation drive of the substrate holding section from the horizontal transport position to the film-forming upright position, a torque acting in the opposite direction to the rotation direction from the horizontal transport position to the film-forming upright position is generated, but it is possible to prevent the generation of a torque in the positive direction relative to the rotation direction.

[0034] Therefore, even if the center of gravity of the substrate holding part shifts due to the rotation of the rotation axis, displacement and impact between the structural components constituting the rotation support mechanism can be suppressed. Thus, even when the substrate holding part is rotated while a large substrate with a side length exceeding 1800 mm is supported by the substrate holding part, excessive impact can be suppressed, resulting in the following effects.

[0035] • It can suppress load variations generated in the substrate holding section.

[0036] • It can suppress backlash that occurs on the drive gear that constitutes the reducer that imparts rotational force to the rotating shaft.

[0037] • It can suppress torsion generated on the rotating shaft.

[0038] • It can suppress deformation such as deflection in the substrate holding part.

[0039] • It can suppress changes in the gaps between the structural components of the rotating support mechanism.

[0040] • It can suppress the offset between the structural components of the rotating support mechanism.

[0041] • It can suppress the movement of the substrate holding part across a line extending vertically from the rotation axis.

[0042] Therefore, it can suppress the generation of particles caused by the impact of the rotating support mechanism, and prevent cracks and gaps in the substrate caused by the impact. As a result, it can improve the processing characteristics of the substrate in processes such as film formation.

[0043] Furthermore, in the film-forming upright position within the rotating support mechanism, the center of gravity of the substrate holding portion is located directly above the rotation axis in the vertical direction, or slightly forward of the position directly above the rotation axis in the rotational direction. Therefore, it is possible to suppress variations in the distance between the substrate processing unit within the processing chamber and the substrate. Additionally, it is possible to suppress variations in the distance between the substrate holding portion and the mask. This prevents contact between the substrate holding portion and the mask. Furthermore, during substrate processing, it is possible to prevent changes in the electrical state of the substrate, such as its potential. This improves the processing characteristics of substrate processing, such as film formation.

[0044] In a substrate processing apparatus according to one aspect of the present invention, the rotating support mechanism includes: a platform portion integrally disposed with the rotating shaft; a flange portion integrally disposed with the substrate holding portion; and a fastening member passing through the flange portion and fastening it to the platform portion. The platform portion has a first mounting plane abutting against the flange portion. The flange portion has a second mounting plane abutting against the platform portion. The first mounting plane is a plane along the axial direction of the rotating shaft and in a tangential direction relative to the outer peripheral surface of the rotating shaft. The substrate holding portion can also be fastened to the rotating shaft by the fastening member passing through the flange portion in a direction intersecting the second mounting plane, while the first mounting plane abuts against the second mounting plane.

[0045] According to the above structure, a fastening friction surface is generated at the fastening portion where the rotating shaft and the substrate holding portion are fastened. The direction of the sliding or other offset generated on such a fastening friction surface, that is, the direction of the offset between the rotating shaft and the substrate holding portion, can be set along the first mounting plane and the second mounting plane. Therefore, the direction of the offset between the rotating shaft and the substrate holding portion can be defined regardless of the rotational position of the substrate holding portion in the rotational direction of the rotating shaft. The possibility of the rotating shaft and the substrate holding portion offsetting each other can be reduced.

[0046] Furthermore, in the film-forming upright position of the substrate holding portion, where an offset occurs between the rotation axis and the substrate holding portion, the fastening portion is located at the lowest point of the substrate holding portion. Therefore, offset at the lowest position of the substrate holding portion can be suppressed, reducing displacement and impact between the structural components of the rotation support mechanism. In particular, displacement and impact between the rotation axis and the substrate holding portion can be reduced.

[0047] Furthermore, in the existing fixing structure of the substrate holding part and the rotating shaft, a flange portion formed on the rotating shaft on the radially outer side and a fastening surface formed on the substrate holding part and in contact with the flange are fastened by a fastening member extending parallel to the rotating shaft. In this structure, on the fastening friction surface between the flange portion and the fastening surface, the flange portion and the fastening surface are offset from each other in the circumferential direction of the rotating shaft.

[0048] In contrast, according to the above structure, the fastening member passes through the flange in the direction intersecting the second mounting plane, and the substrate holding part is fastened to the rotation axis by the fastening member. Therefore, a structure in which no offset occurs in the circumferential direction of the rotation axis can be obtained.

[0049] In a substrate processing apparatus according to one aspect of the present invention, a first engaging portion is formed on the first mounting plane. A second engaging portion is formed on the second mounting plane. The first engaging portion and the second engaging portion can also engage with each other while the first mounting plane and the second mounting plane are in contact.

[0050] According to the above structure, it is possible to prevent offset caused by the sliding of the first mounting plane and the second mounting plane. In particular, in the rotary support mechanism, it is possible to prevent offset in the direction in which the substrate holding part falls relative to the rotation axis due to gravity. Therefore, the first engaging part and the second engaging part can be referred to as sliding prevention parts.

[0051] By utilizing such a first and second engaging portion, the workability of the substrate holding portion during mounting relative to the rotation axis can be improved, and the operation time can be shortened. Furthermore, a sliding prevention portion can be formed at the lower end of the first and second mounting planes in the horizontal transport position.

[0052] In a substrate processing apparatus according to one aspect of the present invention, the rotating support mechanism may further include a non-contact stop portion, which stops the substrate holding portion at the film-forming upright position during the rotation drive that rotates the substrate holding portion from the horizontal transport position to the film-forming upright position.

[0053] According to the above structure, when the substrate holding part rotates from a horizontal transport position to a film-forming upright position driven by the rotation axis, the non-contact stop part can stop the rotation of the substrate holding part in such a way that the mask or other components do not contact the substrate holding part. Therefore, since the mask or other components do not contact the substrate holding part, the generation of particles caused by impacts in the substrate holding part can be prevented. Thus, surface treatment of the substrate can be performed in an atmosphere that prevents particle generation. Furthermore, the rotation drive of the rotation axis can be easily controlled.

[0054] In a substrate processing apparatus according to one aspect of the present invention, the mask may also be disposed between the boundary position between the processing chamber and the back chamber and the substrate located in the film-forming upright position.

[0055] According to the above structure, the rotating shaft can be positioned on the rotating support mechanism to provide sufficient positional allowance for mounting the rotating shaft on the chamber wall of the back chamber. Here, in the film-forming upright position, the rotating shaft is supported directly below the substrate holding portion, which is upright along the mask. Furthermore, in order to transmit power from a rotating drive source located outside the back chamber to the substrate holding portion, the rotating shaft needs to penetrate the chamber wall of the back chamber. Moreover, sealing components and the like need to be arranged around the rotating shaft on the chamber wall. Therefore, in the configuration of the rotating shaft mounted in the back chamber through the chamber wall, sufficient positional allowance is required.

[0056] Here, as an example of a rotation axis with positional margin, a configuration in which the position through which the rotation axis passes in the chamber wall of the back chamber is not too close to the boundary between the processing chamber and the back chamber, or a configuration in which the position through which the rotation axis passes in the chamber wall of the back chamber is not too close to the bottom of the chamber wall of the back chamber, etc.

[0057] This solves the problem that arises when the mask approaches the boundary between the processing chamber and the back chamber, which means it solves the problem of the disappearance of the positional margin for mounting the rotating shaft on the chamber wall that forms the back chamber.

[0058] In one embodiment of the substrate processing apparatus, the processing chamber has a substrate processing section that faces the mask and performs surface treatment on the substrate. The substrate processing section may also protrude into the back chamber from a boundary position between the processing chamber and the back chamber.

[0059] The specific details are as follows. The processing chamber and the back cover chamber each have a connection end. The connection point between the processing chamber's connection end and the back cover chamber's connection end corresponds to the boundary between the processing chamber and the back cover chamber. Here, in the separated state of the processing chamber and the back cover chamber, the connection end of the processing chamber is separated from the connection end of the back cover chamber. In this separated state, the substrate processing section protrudes from the connection end of the processing chamber.

[0060] Therefore, when performing maintenance on the processing chamber and back chamber, with the processing chamber and back chamber separated, lifting mechanisms such as cranes for maintenance can easily approach the upper position of the substrate processing unit. The substrate processing unit can be lifted by the lifting mechanism, easily disassembled from the processing chamber upwards, and moved outside the processing chamber. This simplifies and facilitates maintenance operations such as the installation and removal of the substrate processing unit, reducing operation time.

[0061] On the other hand, in a structure where the substrate processing unit is disposed inside the processing chamber without protruding from the connection end of the processing chamber, when removing the substrate processing unit, it is necessary to move the substrate processing unit horizontally from the processing chamber through an opening at the boundary between the processing chamber and the back chamber, and then move the substrate processing unit upward from the processing chamber. That is, a two-step removal operation is required to remove the substrate processing unit from the processing chamber.

[0062] In contrast, according to one aspect of the present invention, the substrate processing apparatus can easily disassemble the substrate processing section from the processing chamber upwards through a single disassembly operation.

[0063] In this case, if the substrate processing section has a deposition source, the deposition source can be easily moved. Additionally, if the substrate processing section has a cathode unit, the backplate and target constituting the cathode unit can be easily moved.

[0064] In one embodiment of the substrate processing apparatus, the substrate processing unit has a deposition source. Deposition processing can also be performed in the processing chamber.

[0065] According to the above structure, when depositing a film on a substrate, damage to the substrate caused by cracks and gaps due to the rotational operation of the substrate holding part in the rotating support mechanism can be prevented. Simultaneously, the distance between the mask and the substrate can be appropriately maintained to prevent deterioration of film deposition characteristics. Furthermore, particle generation can be suppressed to prevent further deterioration of film deposition characteristics.

[0066] In one aspect of the substrate processing apparatus according to the present invention, the substrate processing section has a cathode electrode. Sputtering processing can also be performed in the processing chamber.

[0067] According to the above structure, when a film is formed on a substrate by sputtering, damage to the substrate caused by cracks and gaps due to the rotational operation of the substrate holding part in the rotating support mechanism is prevented. Simultaneously, the distance between the mask and the substrate can be appropriately maintained, maintaining the potential state required for sputtering and preventing deterioration of film formation characteristics. Furthermore, particle generation can be suppressed, preventing further deterioration of film formation characteristics.

[0068] According to one aspect of the present invention, when a substrate is rotated between a horizontal transport position (serving as a transport position) and a film-forming upright position (serving as a processing position), displacement and impact between structural members constituting the rotation support mechanism can be suppressed. Furthermore, cracks and gaps on the substrate can be prevented, particle generation can be suppressed, the distance between the substrate processing section and the substrate and mask can be appropriately maintained, and changes in the surface treatment state of the substrate can be prevented. Processing characteristics in substrate processing, such as film formation, can be improved. Attached Figure Description

[0069] Figure 1 This is a schematic top view of the substrate processing apparatus according to the first embodiment of the present invention.

[0070] Figure 2 This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention.

[0071] Figure 3 This is a schematic side view showing the rotating support mechanism in the substrate processing apparatus according to the first embodiment of the present invention.

[0072] Figure 4 This is an enlarged view showing the main part of the rotating support mechanism in the substrate processing apparatus according to the first embodiment of the present invention, and a cross-sectional view showing the fastening structure between the substrate holding part and the rotating shaft.

[0073] Figure 5 This is a schematic top view showing the substrate holding portion of the rotating support mechanism in the substrate processing apparatus according to the first embodiment of the present invention.

[0074] Figure 6 This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, and is a diagram for illustrating the surface processing process of the substrate.

[0075] Figure 7 This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, and is a diagram for illustrating the surface processing process of the substrate.

[0076] Figure 8This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, and is a diagram for illustrating the surface processing process of the substrate.

[0077] Figure 9 This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, and is a diagram for illustrating the surface processing process of the substrate.

[0078] Figure 10 This is a schematic side view showing the back chamber and processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, and is a diagram for illustrating the surface processing process of the substrate. Detailed Implementation

[0079] Hereinafter, the substrate processing apparatus according to the first embodiment of the present invention will be described with reference to the accompanying drawings.

[0080] Furthermore, this embodiment is specifically described in order to better understand the spirit of the invention, and unless otherwise specified, it is not intended to limit the invention.

[0081] In this embodiment, an XYZ orthogonal coordinate system is used to describe the positional relationships of the various structures. The direction of gravity, which is parallel to the vertical direction, is called the Z-direction. Within the Z-direction, the direction aligned with the direction of gravity is called the downward direction (lower), and the direction opposite to the direction of gravity is called the upward direction (upper). In the following description, "viewing from above" refers to observing the object from the direction of gravity or the downward direction. The transport direction of the glass substrate is called the horizontal direction or the X-direction. The direction orthogonal to both the Z-direction and the X-direction is called the Y-direction.

[0082] <Substrate Processing Apparatus>

[0083] Figure 1 This is a schematic top view showing the substrate processing apparatus in this embodiment. Figure 1 In the accompanying drawings, reference numeral 1 denotes a substrate processing apparatus. The substrate processing apparatus 1 is suitable for use in a back-and-forth sputtering apparatus and / or a deposition apparatus for manufacturing organic electroluminescent materials (ELs) to perform heat treatment, film formation, etching, and other processes on a substrate 11 made of glass or resin in a vacuum environment. The substrate processing apparatus 1 is used, for example, in the manufacturing process of flat panel displays (FPDs). In this case, for example, thin film transistors (TFTs) can be formed on the substrate 11. In this embodiment, the substrate processing apparatus 1 is described as a sputtering apparatus. In other words, the surface treatment performed in the substrate processing apparatus 1 is a film formation process, i.e., sputtering.

[0084] The substrate processing apparatus 1 includes film deposition chambers 4 and 4A and loading and unloading chambers 2 and 2A. Multiple chambers 2, 2A, 4, and 4A are arranged to surround a transport chamber (transfer chamber) 3. Each of the multiple chambers 2, 2A, 4, and 4A is, for example, two loading and unloading chambers 2 and 2A and two film deposition chambers 4 and 4A formed adjacent to each other. Furthermore, the substrate processing apparatus 1 has a control device (not shown) for controlling the substrate processing apparatus 1. The control device controls the operation in the film deposition chambers 4 and 4A and the loading and unloading chambers 2 and 2A. As described later, the control device controls the rotational operation of the rotational support mechanism 10 in the film deposition chambers 4 and 4A.

[0085] <Loading and Unloading Room>

[0086] For example, one loading and unloading chamber 2 functions as a loading chamber for moving the glass substrate 11 from the outside to the inside of the substrate processing apparatus 1. The other loading and unloading chamber 2A functions as an unloading chamber for moving the glass substrate 11 from the inside to the outside of the substrate processing apparatus 1. Furthermore, the same film-forming process can be performed in both the film-forming chamber 4 and the film-forming chamber 4A, or different film-forming processes can be performed. The glass substrate 11 is an example of a "substrate".

[0087] Separating valves are respectively installed between loading and unloading chamber 2 and transport chamber 3, between loading and unloading chamber 2A and transport chamber 3, between film forming chamber 4 and transport chamber 3, and between film forming chamber 4A and transport chamber 3.

[0088] A positioning component is provided in the loading and unloading chamber 2. A glass substrate 11, which is moved into the loading and unloading chamber 2 from the outside, is placed on the positioning component. The positioning component can set the position of the glass substrate 11, thereby enabling the alignment of the glass substrate 11. A rough evacuation exhaust unit is connected to the loading and unloading chamber 2 to depressurize (roughly evacuate) the internal space of the loading and unloading chamber 2. The rough evacuation exhaust unit is, for example, a rotary pump.

[0089] <Transportation Room>

[0090] like Figure 1 As shown, the transport chamber 3 includes a transport device 3a disposed inside the transport chamber 3. The transport device 3a is, for example, a transport robot.

[0091] The handling device 3a includes a rotating shaft, a drive source for rotating the rotating shaft, a robot arm mounted on the rotating shaft, a robot hand formed on a part of the robot arm, and a vertical movement mechanism. The robot arm has a first and a second intersecting moving track, a first base capable of moving the second moving track relative to the first moving track, and a second base capable of moving the robot hand relative to the second moving track. The handling device 3a is capable of moving the glass substrate 11, which is the object being handled, between chambers 2, 2A, 3, 4, and 4A.

[0092] Alternatively, a robotic arm can also consist of a first active arm, a second active arm, a first driven arm, and a second driven arm that can bend against each other.

[0093] <Film-forming chamber>

[0094] Film-forming chambers 4 and 4A have the same structure. Hereinafter, film-forming chamber 4 will be described and the description of film-forming chamber 4A will be omitted.

[0095] Figure 2 This is a schematic side view showing a portion of the film-forming chamber 4 in this embodiment.

[0096] like Figure 1 and Figure 2 As shown, the film-forming chamber 4 includes a power supply 4p, a gas atmosphere setting mechanism 4g, and a cathode unit 5. The power supply 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are used to perform film-forming processing on the glass substrate 11. The power supply 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are an example of a "substrate processing unit". Alternatively, the substrate processing unit can be referred to as a substrate processing mechanism or a film-forming source.

[0097] The film-forming chamber 4 consists of a plasma chamber 4m and a stage chamber 4n.

[0098] <Power supply and gas atmosphere setting mechanism>

[0099] The power supply 4p is connected to the backplate 6 of the cathode unit 5, which will be described later. The power supply 4p applies a negative sputtering voltage to the backplate 6.

[0100] The gas atmosphere setting mechanism 4g is configured to set the gas atmosphere inside the membrane chamber 4.

[0101] The gas atmosphere setting mechanism 4g includes a gas inlet for introducing processing gas into the film-forming chamber 4, and a high-vacuum exhaust section for depressurizing (evacuating) the internal space of the film-forming chamber 4. The gas inlet is connected to a gas supply source. The gas inlet is, for example, a mass flow controller that adjusts the flow rate of the gas supplied from the gas supply source. The high-vacuum exhaust section is, for example, a turbomolecular pump.

[0102] <Cathode Unit>

[0103] The cathode unit 5 is erected inside the film-forming chamber 4.

[0104] The cathode unit 5 has a target 7 and a back plate 6 for holding the target 7.

[0105] The back plate 6 functions as a cathode electrode. The back plate 6 is erected inside the film-forming chamber 4 at the position furthest from the transport port 4a located between the transport chamber 3 and the film-forming chamber 4.

[0106] A target 7 is fixed to the front surface of the back plate 6, facing the glass substrate 11 approximately parallel to it during processing. The back plate 6 is an electrode used to apply a negative potential sputtering voltage to the target 7.

[0107] A magnetron magnetic circuit for forming a predetermined magnetic field on the target 7 is provided on the rear surface side of the back plate 6. The magnetron magnetic circuit is mounted on a rocking mechanism. The rocking mechanism has a drive device for rocking the magnetron magnetic circuit. The drive device of the rocking mechanism is configured to rock the magnetron magnetic circuit.

[0108] <Modified Example of Cathode Unit>

[0109] As a variation of the cathode unit 5, multiple rotating cathodes can also be used in the film deposition chamber 4. The structure of multiple rotating cathodes can employ a configuration where multiple cylindrical cathodes are arranged side-by-side and a target is provided on the outer peripheral surface of each cathode. Each of the multiple rotating cathodes can also rotate around a cylindrical axis. The film deposition chamber 4 can also be equipped with a rocking mechanism that, when processing the glass substrate 11, causes the magnetron magnetic circuit to rock relative to the multiple rotating cathodes in a manner substantially parallel to the glass substrate 11.

[0110] <Plasma Chamber, Platform Chamber>

[0111] A target 7 constituting the cathode unit 5 and a backplate 6 are disposed in the plasma chamber 4m. A film-forming process is performed on the glass substrate 11 within the plasma chamber 4m. That is, the plasma chamber 4m is an example of a "processing chamber".

[0112] The stage chamber 4n is adjacent to the plasma chamber 4m in the X direction. The stage chamber 4n has a transport port 4a. The transport port 4a is an opening through which the glass substrate 11 passes when transported in the X direction. The stage chamber 4n is adjacent to the transport chamber 3 via the transport port 4a. A partition valve is disposed on the transport port 4a. By opening and closing the partition valve, the stage chamber 4n is connected to the transport chamber 3, or the stage chamber 4n is isolated relative to the transport chamber 3. The stage chamber 4n supports the glass substrate 11 during the film deposition process in the plasma chamber 4m. That is, the stage chamber 4n is an example of a "back chamber".

[0113] The plasma chamber 4m has an opening 40 that opens into the stage chamber 4n and a connecting end 41 that surrounds the opening 40. The connecting end 41 is the part that connects to the connecting end 43 of the stage chamber 4n.

[0114] The platform chamber 4n has an opening 42 that opens into the plasma chamber 4m and a connecting end 43 that surrounds the opening 42. The connecting end 43 is the part that connects to the connecting end 41 of the plasma chamber 4m.

[0115] Connection ends 41 and 43 are connected in a mutually opposing manner. Through the connection of connection ends 41 and 43, the plasma chamber 4m and the stage chamber 4n are assembled to form the film-forming chamber 4. Furthermore, through the connection of connection ends 41 and 43, openings 40 and 42 are interconnected. Thus, an internal space 44 is formed between the plasma chamber 4m and the stage chamber 4n. Through the connection of connection ends 41 and 43, the internal space 44 is sealed.

[0116] In the sealed structure of the internal space 44, an O-ring is disposed on one of the connecting ends 41 and 43, and a sealing surface is formed on the other of the connecting ends 41 and 43. The surface where the connecting ends 41 and 43 connect is the mating surface 4d. The mating surface is an example of the "boundary position between the processing chamber and the back chamber".

[0117] The plasma chamber 4m has a target 7 and a back plate 6. The target 7 and the back plate 6 are opposite to the mask 20 described later. The target 7 and the back plate 6 disposed in the plasma chamber 4m protrude from the mating surface 4d (connecting end 41) toward the stage chamber 4n.

[0118] In other words, the target 7 and the backplate 6 are not located inside the plasma chamber 4m.

[0119] Furthermore, in this embodiment, the shape of the mating surface 4d is approximately planar. However, the shape of the mating surface 4d is not limited to a planar shape. The shape of the mating surface 4d can also be determined based on the shape of the opening 40 of the plasma chamber 4m and the shape of the opening 42 of the stage chamber 4n.

[0120] <Front side space, rear side space>

[0121] like Figure 1 and Figure 2 As shown, the internal space 44 of the film-forming chamber 4 has a front side space 45 and a back side space 46 arranged in the X direction. The front side space 45 is the space of the surface exposed on the film-forming surface facing the glass substrate 11 during film formation.

[0122] The front space 45 is formed by a combination of the internal space of the plasma chamber 4m and the internal space of the platform chamber 4n. That is, the front space 45 is formed by opening 42 and opening 40. Opening 42 is an opening surrounded by the connecting end 43 of the platform chamber 4n, which is closer to the plasma chamber 4m than the mask 20. Opening 40 is an opening surrounded by the connecting end 41 of the plasma chamber 4m.

[0123] The back side space 46 is the main internal space of the stage chamber 4n. The back side space 46 is the space facing the back of the glass substrate 11 during film deposition.

[0124] The front space 45 and the back space 46 form the internal space 44 of the film-forming chamber 4 in a closed state, which is assembled from the plasma chamber 4m and the stage chamber 4n.

[0125] exist Figure 2 In the attached drawing, reference numeral 4b indicates the boundary between the front space 45 and the back space 46 in the film-forming chamber 4. A mask 20 is disposed at the boundary location 4b. A backplate 6, on which a target 7 is fixed, is disposed in the front space 45 of the film-forming chamber 4.

[0126] A rotating support mechanism 10 is disposed in the back space 46 of the film-forming chamber 4. This rotating support mechanism 10 rotates the glass substrate 11 while supporting the glass substrate 11 that is moved in from the transport port 4a. The rotating support mechanism 10 may be referred to as a platform mechanism.

[0127] In the X direction, the boundary position 4b between the front space 45 and the back space 46 in the film-forming chamber 4 is closer to the position of the transport port 4a than the position of the mating surface 4d where the connecting end 41 of the plasma chamber 4m and the connecting end 43 of the stage chamber 4n are joined.

[0128] Furthermore, the plasma chamber 4m and the stage chamber 4n are separable from each other in the X direction. With the plasma chamber 4m and stage chamber 4n separated, the mask 20 is disposed inside the stage chamber 4n. In this state, the target 7 and the backplate 6 are disposed inside the plasma chamber 4m.

[0129] <Mask>

[0130] The mask 20 is disposed inside the stage chamber 4n. Inside the stage chamber 4n, the mask 20 is positioned closer to the transport port 4a than the mating surface 4d. In other words, the mask 20 is disposed between the mating surface 4d and the glass substrate 11 located in the film-forming upright position. The mask 20 is upright and positioned opposite the plasma chamber 4m.

[0131] The mask 20 has a generally rectangular mask frame 20a and multiple ribs extending along the mask frame 20a in a longitudinal and transverse manner. The multiple ribs divide the internal area of ​​the mask frame 20a.

[0132] The mask frame 20a is formed of a rigid metal such as SUS. The ribs are formed of metal foil such as an expansion alloy. The ribs are fixed to the mask frame 20a while their ends are stretched. The area surrounded by multiple ribs extending longitudinally and laterally inside the mask frame 20a is the film-forming area.

[0133] The mask 20 has a film-forming opening 20b. The film-forming opening 20b is an opening formed by the mask frame 20a. The film-forming opening 20b opens at the boundary position 4b between the front space 45 and the back space 46.

[0134] The mask 20 has a mask support portion 20g. The mask support portion 20g is provided at both ends in the Z direction and at both ends in the Y direction of the mask frame 20a. The mask 20 is supported in the stage chamber 4n by the mask support portion 20g. At this time, the position of the mask 20 can be aligned in the pre-film deposition process by means of the mask alignment portion (not shown).

[0135] <Rotational support mechanism, rotational shaft, substrate holding part>

[0136] The rotating support mechanism 10 has a rotating shaft 12 and a substrate holding part 13. The rotating shaft 12 is rotatable about a rotation center. The substrate holding part 13 is mounted on the rotating shaft 12. The substrate holding part 13 is, for example, a platform. When the substrate holding part 13 is in a horizontal transport position, the shape of the substrate holding part 13 is approximately a rectangular flat plate when viewed from the Z direction.

[0137] The substrate holding part 13 can support the back side of the glass substrate 11 within the stage chamber 4n. The rotation support mechanism 10 can rotate the glass substrate 11 between a horizontal transport position and a film-forming upright position while supporting the glass substrate 11 through the substrate holding part 13.

[0138] To explain in more detail.

[0139] When the substrate holding portion 13 is in the horizontal transport position, the substrate holding portion 13 supports the glass substrate 11 in the X direction, allowing the glass substrate 11 to move horizontally via the transport port 4a. Specifically, when the rotary support mechanism 10 positions the substrate holding portion 13 in the horizontal transport position, the glass substrate 11 can be moved from the transport port 4a into the interior of the film deposition chamber 4, and the glass substrate 11 can be moved from the transport port 4a out of the film deposition chamber 4. That is, in the horizontal transport position, the rotary support mechanism 10 maintains the support state of the glass substrate 11 and releases the support state.

[0140] With the substrate holding portion 13 of the glass substrate 11 in the film-forming upright position, the substrate holding portion 13 supports the glass substrate 11 so that the glass substrate 11 is opposite to the mask 20. In this state, the rotating support mechanism 10 holds (supports) the glass substrate 11 so that it is opposite to the target 7 in the film formation process, and performs film formation processing on the glass substrate 11.

[0141] Figure 3 This is a schematic side view showing the substrate holding portion 13 in the rotating support mechanism 10 according to this embodiment. Figure 3 This indicates that the substrate holding part 13 is in a horizontal transport position.

[0142] like Figure 2 and Figure 3 As shown, the rotating support mechanism 10 is located below the back space 46 inside the platform chamber 4n.

[0143] The rotating shaft 12 extends in the Y direction. The rotating shaft 12 is substantially parallel to at least one of the conveying port 4a and the mating surface 4d.

[0144] <Rotary Drive Unit>

[0145] like Figure 2 As shown, the rotary drive unit 12A is connected to the rotary shaft 12. The rotary drive unit 12A enables the rotary shaft 12 to rotate around the rotation center. The rotary drive unit 12A includes a rotary drive source such as an electric motor and a rotary transmission unit such as a speed reducer that transmits the driving force of the rotary drive source to the rotary shaft 12.

[0146] The rotating shaft 12 passes through to form the side wall of the platform chamber 4n. The rotating shaft 12 also passes through to form the side wall of the back space 46 of the platform chamber 4n. The position of the rotating shaft 12 passing through the side wall of the platform chamber 4n is fully separated from the mating surface 4d.

[0147] The rotary drive unit 12A is disposed on the outside of the film-forming chamber 4. The rotary drive unit 12A is connected to both ends of the rotary shaft 12 in the Y direction. That is, the rotary drive unit 12A is connected to one end (first end) and the other end (second end) of the rotary shaft 12. The connection structure between the rotary drive unit 12A and the rotary shaft 12 will be described in detail below.

[0148] The torque load caused by the weight of the substrate holding part 13 and the frame part 14 acts on the rotation shaft 12. In particular, when the substrate holding part 13 is arranged in a horizontal transport position, the torque load of the substrate holding part 13 and the frame part 14 acts on the rotation shaft 12 more significantly.

[0149] For example, when the rotation drive unit 12A that rotates the rotation shaft 12 is connected to only one end of the rotation shaft 12, the torque load on the substrate holding part 13 and the frame part 14 causes torsional deformation on the rotation shaft 12 from one end to the other. If we consider the position of the rotation shaft 12 caused by the displacement (deformation) of the rotation shaft 12 around the rotation shaft due to the torque load, the rotation shaft 12 deforms in such a way that the displacement increases from one end to the other. Accompanying this torsional deformation of the rotation shaft 12, an offset occurs between the frame part 14 connected to one end of the rotation shaft 12 and the frame part 14 connected to the other end of the rotation shaft 12.

[0150] In contrast, in the connection structure between the rotary drive unit 12A and the rotary shaft 12 according to this embodiment, the rotary drive unit 12A is connected to both ends of the rotary shaft 12. In this connection structure, compared to a structure where the rotary drive unit 12A is connected only to one end of the rotary shaft 12, torsional deformation of the rotary shaft 12 can be suppressed. In other words, the amount of displacement (deformation) of the rotary shaft around the rotary shaft 12 caused by the torque load is the same at both ends of the rotary shaft 12. Therefore, no offset occurs between the frame portion 14 connected to one end of the rotary shaft 12 and the frame portion 14 connected to the other end of the rotary shaft 12.

[0151] Furthermore, in the connection structure according to this embodiment, the load applied to the rotation shaft 12 is distributed between one end and the other end of the rotation shaft 12. Therefore, the stress generated on the rotation shaft 12 can be reduced. According to this structure, the substrate holding part 13, which has a greater weight, can be rotated. For example, the connection structure according to this embodiment can be applied to a substrate processing apparatus for processing larger glass substrates 11.

[0152] <Fasting structure between the rotating shaft and the substrate holding part>

[0153] Figure 4 This is an enlarged view showing the main parts of the rotary support mechanism 10 according to this embodiment, and a cross-sectional view showing the fastening structure between the substrate holding part 13 and the rotation shaft 12. Figure 5 This is a schematic top view showing the rotating support mechanism 10 according to this embodiment. Additionally, Figure 4 and Figure 5 This indicates that the substrate holding part 13 is in a horizontal transport position.

[0154] like Figures 2-4 As shown, the substrate holding part 13 is mounted on the rotating shaft 12 via the platform part 12a and the frame part 14.

[0155] The platform 12a and the frame 14 form a mounting structure for mounting the substrate holding part 13 on the rotation axis 12.

[0156] With the substrate holding portion 13 mounted on the rotation shaft 12, the plane of the substrate holding portion 13 in the XY direction is slightly spaced from and not aligned with the axis of the rotation shaft 12 in the Y direction. The substrate holding portion 13 rotates in tandem with the rotation shaft 12 around the rotation center. As a result, the substrate holding portion 13 can cause the glass substrate 11 held by the substrate holding portion 13 to rotate and move around the rotation center of the rotation shaft 12.

[0157] The rotating support mechanism 10 has a fastening structure for mounting the substrate holding part 13 on the rotating shaft 12.

[0158] like Figures 3-5 As shown, the fastening structure has a platform 12a, a frame 14, and a plurality of bolts 15. Bolts 15 are an example of "fastening components".

[0159] <Taiwan>

[0160] The platform 12a is integrally formed with the rotating shaft 12. The platform 12a can also be fixedly connected to the rotating shaft 12 by welding or the like. Alternatively, the platform 12a can be integrally formed with the rotating shaft 12 by machining such as cutting. The platform 12a is formed as a block with a shape having a diameter larger than that of the rotating shaft 12.

[0161] The platform 12a has a first mounting plane 16a that abuts against the flange 14f described later. The first mounting plane 16a is a plane along the axial direction of the rotation axis 12 extending in the Y direction and in the Z direction, which is the tangential direction relative to the outer peripheral surface of the rotation axis 12. An internal thread corresponding to the bolt 15 is formed on the platform 12a. The internal thread opens on the first mounting plane 16a.

[0162] <Framework Section>

[0163] The frame portion 14 is integrally formed with the substrate holding portion 13. The frame portion 14 has a radial arm portion 14r and an axial arm portion 14a. The radial arm portion 14r extends in the X direction. In other words, the radial arm portion 14r extends radially along the rotation axis 12. The axial arm portion 14a extends in the Y direction. In other words, the axial arm portion 14a extends axially along the rotation axis 12.

[0164] The radial arm 14r and axial arm 14a of the frame portion 14 are formed into a rectangular frame that corresponds to the rectangular substrate holding portion 13 when viewed from above. Two radial arms 14r are provided at both ends along the axial direction of the rectangular rotation axis 12 of the substrate holding portion 13. Two axial arms 14a are provided, for example, extending axially along the rotation axis 12. On the radial arm 14r, viewed from the Y direction, a window 14b is formed at the center of the frame portion 14 in the Z direction, penetrating the frame portion 14. By forming the window 14b, the rotation support mechanism 10 can be made lighter. Furthermore, in the rotation support mechanism 10, the portion near the front end 13a located away from the rotation axis 12 can be made lighter.

[0165] <Flange>

[0166] The frame portion 14 has two flange portions 14f formed at positions near both ends of the rotation axis 12. The flange portions 14f are integrally formed with the substrate holding portion 13. Each of the two flange portions 14f is integrally formed with a radial arm portion 14r and an axial arm portion 14a. The flange portions 14f are formed along a first mounting plane 16a. The flange portions 14f are provided on both sides of the rotation axis 12 in the Y direction of the radial arm portion 14r. Through holes corresponding to bolts 15 are formed on the flange portions 14f.

[0167] The flange portion 14f has a second mounting surface 16b that abuts against the platform portion 12a.

[0168] Each of the first mounting plane 16a and the second mounting plane 16b is formed in a planar manner. The first mounting plane 16a and the second mounting plane 16b are formed as approximately equal rectangles.

[0169] <convex part, concave part>

[0170] A sliding prevention portion 17 is formed on each of the first mounting plane 16a and the second mounting plane 16b. Specifically, the sliding prevention portion 17 consists of a protrusion and a recess that engage with each other.

[0171] In this embodiment, as a sliding prevention part 17, a protrusion 17a is formed on the first mounting plane 16a, and a recess 17b is formed on the second mounting plane 16b. The protrusion 17a is an example of a "first engaging part". The recess 17b is an example of a "second engaging part".

[0172] A protrusion 17a is formed at the lower end of the first mounting plane 16a in the Z direction. Here, "lower end" refers to the position below the direction of gravity when the plane of the substrate holding portion 13 is in a horizontal transport position that is horizontal. The protrusion 17a is a protrusion that extends parallel to the axial direction of the rotation axis 12.

[0173] Similarly, a recess 17b is formed at the lower end of the second mounting plane 16b in the Z direction. The recess 17b is a groove or step that extends parallel to the axial direction of the rotation shaft 12.

[0174] When the first mounting plane 16a and the second mounting plane 16b are in contact, the protrusion 17a and the recess 17b engage with each other.

[0175] <bolt>

[0176] The frame portion 14 and the rotating shaft 12 are fastened together by a plurality of bolts 15. With the first mounting plane 16a abutting against the second mounting plane 16b, the bolts 15 pass through the through holes of the flange portion 14f in a direction intersecting the first mounting plane 16a and the second mounting plane 16b, and are fastened to the platform portion 12a. The substrate holding portion 13 is fastened to the rotating shaft 12 by the plurality of bolts 15.

[0177] The direction in which the bolt 15 is tightened, that is, the direction in which the bolt 15 is inserted into the through hole of the flange portion 14f and the direction in which the bolt 15 engages with the internal thread portion, is preferably a direction orthogonal to the first mounting plane 16a and the second mounting plane 16b (X direction). When the plane of the substrate holding portion 13 is in a horizontal transport position, the plurality of bolts 15 are arranged in a manner that is horizontal in the Z direction. Two adjacent bolts 15 are spaced apart. By tightening the plurality of bolts 15, the flange portion 14f is pressed onto the platform portion 12a, and the flange portion 14f is fastened to the platform portion 12a. The directions of the plurality of bolts 15 that engage with the internal thread portion of the platform portion 12a are parallel to each other.

[0178] <Non-contact stopping section>

[0179] The rotary support mechanism 10 has a non-contact stop portion 10mg. The non-contact stop portion 10mg is configured to stop the substrate holding portion 13 in the film-forming upright position during rotary drive that rotates the substrate holding portion 13 from a horizontal transport position to a film-forming upright position. In other words, the non-contact stop portion 10mg has the function of stopping the operation of the substrate holding portion 13 rotating from the horizontal transport position to the film-forming upright position at the film-forming upright position. The non-contact stop portion 10mg is provided on the front end 13a of the substrate holding portion 13.

[0180] A non-contact stop portion 10mg is also disposed on the upper part of the mask 20, corresponding to the substrate holding portion 13 located in the film-forming upright position. In other words, the non-contact stop portion 10mg disposed at the front end 13a of the substrate holding portion 13 is the first non-contact stop portion. The non-contact stop portion 10mg disposed on the upper part of the mask 20 is the second non-contact stop portion. The first non-contact stop portion and the second non-contact stop portion are, for example, mutually repelling magnets. The first non-contact stop portion and the second non-contact stop portion are opposite to each other. The polarities of the magnets constituting the first non-contact stop portion and the second non-contact stop portion are the same.

[0181] Alternatively, as a structure for the non-contact stop portion 10mg, magnets with mutually attracting polarities may be used, for example. In this case, a first non-contact stop portion is disposed on the front end 13a of the substrate holding portion 13. In the region near the upper part of the mask 20, a second non-contact stop portion is disposed outside the rotation range of the substrate holding portion 13. The polarities of the magnet constituting the first non-contact stop portion are different from those of the magnet constituting the second non-contact stop portion. Therefore, when the substrate holding portion 13 is in the film-forming upright position, the first non-contact stop portion disposed on the front end 13a of the substrate holding portion 13 is attracted by the second non-contact stop portion disposed outside the rotation range of the substrate holding portion 13.

[0182] <Horizontal transport position, film-forming upright position>

[0183] like Figure 2 As shown, the substrate holding part 13 can rotate by rotating the rotating shaft 12 around the rotation center under the action of the rotation drive unit 12A. The rotatable range of the substrate holding part 13 is set by rotating it between a horizontal transport position and a film-forming upright position. Figure 2 In the diagram, the rotatable range Rr is represented by a dashed arc.

[0184] Here, the so-called horizontal transport position (horizontal position) refers to a position in which the substrate holding part 13 is maintained in a horizontal state so that the glass substrate 11 can move between the stage chamber 4n and the outside of the film forming chamber 4 when the glass substrate 11 is moved toward the film forming chamber 4. In the horizontal transport position, the substrate holding part 13 is arranged in a horizontal placement position that is slightly above the rotation axis 12 and is in a generally horizontal direction.

[0185] Furthermore, the so-called film-forming upright position (standing position) refers to the position in which the substrate holding portion 13 is upright along the mask 20, with the glass substrate 11 facing the mask 20, when surface treatment is performed on the glass substrate 11 supported inside the stage chamber 4n. In the film-forming upright position, the substrate holding portion 13 is located directly above the rotation axis 12. Here, in such a film-forming upright position, that is, when the substrate holding portion 13 is directly above the rotation axis 12, the center of gravity Gv of the substrate holding portion 13 does not exceed the straight line RL extending upward in the vertical direction from the axis 12r of the rotation axis 12. In other words, in the X direction, the center of gravity Gv of the substrate holding portion 13 is not located between the straight line RL and the plasma chamber 4m. That is, during the rotational drive of the substrate holding portion 13 from the horizontal transport position to the film-forming upright position, the position of the center of gravity Gv of the substrate holding portion 13 in the film-forming upright position does not exceed the straight line RL. In other words, the position of the center of gravity Gv can be on the straight line RL, or it can be located in front of the straight line RL in the rotational direction. The line RL is an example of "the position of the axis of rotation directly above the vertical direction".

[0186] In addition, in the film-forming upright position, the center of gravity Gv of the substrate holding portion 13 may be located slightly closer to the center of gravity Gh of the substrate holding portion 13 in the horizontal transport position than on the straight line RL extending upward in the vertical direction from the axis of rotation 12.

[0187] The center of gravity Gv of the substrate holding portion 13 in the upright position and the center of gravity Gh of the substrate holding portion 13 in the horizontal transport position are considered, taking into account the center of gravity of the substrate holding portion 13 when holding the glass substrate 11. Based on this center of gravity, the rotatable range is set. The center of gravity Gv and the center of gravity Gh are on the same side relative to the straight line RL extending vertically from the rotation axis 12. In other words, the center of gravity Gv and the center of gravity Gh are located between the straight line RL and the transport port 4a. The vertical line falling from the center of gravity Gv intersects the line segment connecting the center of gravity Gv and the axis 12r.

[0188] In the rotary support mechanism 10, when the substrate holding part 13 is in the horizontal placement position, the transport port 4a is located on the extension line of the surface of the substrate holding part 13. In this state, the glass substrate 11, which is horizontally transported from the transport chamber 3, can be placed on the rotary support mechanism 10.

[0189] On the other hand, in the rotating support mechanism 10, when the substrate holding portion 13 is in the vertical processing position, such as Figure 2As shown, the glass substrate 11 can be supported from the back side of the glass substrate 11 on the front side of the substrate holding portion 13. The front side of the substrate holding portion 13 has a larger profile than the glass substrate 11. When the substrate holding portion 13 is in the vertical processing position (film deposition upright position), the front side of the substrate holding portion 13 is located at approximately the blocking boundary position 4b. In this state, the front side 11T of the glass substrate 11 supported by the substrate holding portion 13 (see reference) Figure 8 It is positioned opposite to the back plate 6, thereby enabling the formation of a film on the front side 11T of the glass substrate 11.

[0190] A plurality of support pins are provided on the substrate holding portion 13. These support pins abut against the back surface of the glass substrate 11 when the substrate holding portion 13 is rotated to a horizontal transport position, thereby supporting the glass substrate 11. The support pins can press the glass substrate 11 onto the mask 20 during the rotation of the substrate holding portion 13 from the horizontal transport position to the film-forming upright position (vertical processing position), and while in the film-forming upright position (vertical processing position). The plurality of support pins are distributed at multiple locations on the surface of the substrate holding portion 13, facing the back surface of the glass substrate 11. The pressure applied to the back surface of the glass substrate 11 by the support pins can be adjusted. Each support pin has a hemispherical abutment portion formed of resin at its front end.

[0191] Multiple clamps are provided on the substrate holding portion 13. During the rotational range of the substrate holding portion 13 from a horizontal transport position to a film-forming upright position (vertical processing position), the clamps abut against the end faces of the peripheral edge of the glass substrate 11 to support the glass substrate 11. Multiple clamps are arranged in the substrate holding portion 13 at positions that form the periphery of the glass substrate 11 placed on the upper surface of the substrate holding portion 13. Multiple clamps are positioned on the outer periphery of the substrate holding portion 13. When the glass substrate 11 is placed on the support pin, the clamps align the glass substrate 11 by abutting against the end faces of the peripheral edge of the glass substrate 11.

[0192] Each of the plurality of clamps is capable of oscillating between an outer position, which is outward relative to the center of the substrate holding portion 13, and a support position, which is inward relative to the center of the substrate holding portion 13, via a clamp-driven moving device (not shown). When the clamps abut against the end face of the peripheral edge of the glass substrate 11, they prevent the glass substrate 11 from leaving the substrate holding portion 13. By oscillating the clamps between the outer position and the support position relative to the substrate holding portion 13, the glass substrate 11 can be placed on the substrate holding portion 13 and removed from the substrate holding portion 13.

[0193] When the support pin is subjected to a spring force in a direction orthogonal to the surface of the glass substrate 11, it contacts the back side of the glass substrate 11 and supports the weight of the glass substrate 11. In contrast, when the clamp is subjected to a spring force in a direction parallel to the surface of the glass substrate 11, it contacts the end face of the glass substrate 11 and supports the weight of the glass substrate 11.

[0194] The rotary support mechanism 10 includes a lifting pin 50 and a lifting pin moving device (not shown) for moving the lifting pin 50 up and down. The lifting pin 50 is provided on the substrate holding portion 13. The lifting pin 50 extends in the vertical direction. A plurality of lifting pins 50 are arranged at approximately equal intervals along the upper surface of the substrate holding portion 13. When the glass substrate 11 is moved into the film forming chamber 4 (4A), or when the glass substrate 11 is moved out of the film forming chamber 4 (4A), the lifting pin 50 protrudes upward from the substrate holding portion 13, which is arranged in a horizontal transport position, and supports the glass substrate 11 located above the substrate holding portion 13.

[0195] At a position higher than the substrate holding portion 13 in the horizontal transport position, the front end of the lifting pin 50 abuts against and supports the back side of the glass substrate 11, and moves vertically downward to place the glass substrate 11 onto the substrate holding portion 13. In the rising position, the front end of the lifting pin 50 is located higher than the front side of the substrate holding portion 13, and in the falling position, it is positioned so as not to interfere with the rotation operation of the substrate holding portion 13. The lifting pin 50 can be provided on the substrate holding portion 13 or at the bottom of the platform cavity 4n.

[0196] The lifting pin moving device is a drive device such as a drive motor disposed outside the film-forming chambers 4 and 4A. The lifting pin moving device has a structure that extends or retracts the lifting pin 50 by means of a drive device. The lifting pin 50 can be driven by the drive device while maintaining the chamber 4 in a sealed state. According to this structure, when the glass substrate 11 is moved into or out of the film-forming chambers 4 and 4A, the glass substrate 11 can be freely transferred between the substrate holding part 13 and the robotic arm of the transport device 3a.

[0197] <Film Formation Methods>

[0198] Next, the method for forming a film in the substrate processing apparatus 1 according to this embodiment will be described.

[0199] Furthermore, in the following description, the substrate processing in which a film is formed on a glass substrate 11 held by a rotating support mechanism 10 in film formation chamber 4, one of the two film formation chambers 4 and 4A, will be described. Also, regarding the structure for rotating the glass substrate 11 to face the mask 20, since it is the same in film formation chambers 4 and 4A, the description of film formation chamber 4A will be omitted.

[0200] First, the glass substrate 11 is moved from outside the substrate processing apparatus 1 into the interior. A vacuum atmosphere is maintained inside the substrate processing apparatus 1 (see reference). Figure 1 The glass substrate 11, which is brought into the substrate processing apparatus 1, is first placed on a positioning member inside the loading and unloading chamber 2. Thereby, the glass substrate 11 is aligned to a predetermined position on the positioning member.

[0201] Next, the transport device 3a operates in the transport chamber 3, with its robotic arm inserted into the loading and unloading chamber 2. In the loading and unloading chamber 2, the glass substrate 11, placed on the positioning component, is supported by the robotic arm of the transport device 3a. The glass substrate 11 is then removed from the loading and unloading chamber 2 by the transport device 3a. Finally, the glass substrate 11 is transported via the transport device 3a from the transport chamber 3 to the film-forming chamber 4.

[0202] Figures 6-8 This is a schematic side view showing the process performed in the film-forming chamber 4 in this embodiment. Additionally, in these... Figures 6-8 Sometimes, the structures described in the above embodiments are omitted.

[0203] First, in film-forming chamber 4, as Figure 6 As shown, in the rotary support mechanism 10, the rotary shaft 12 rotates via the rotary drive unit 12A. Consequently, the substrate holding part 13 is positioned in a horizontal transport position. Then, the transport port 4a of the film deposition chamber 4 opens. The lifting pin 50 is positioned in a ready position, protruding from the front of the substrate holding part 13, via the lifting pin moving device. Simultaneously, the clamp is positioned in a position where it opens outward along the contour of the substrate holding part 13 and retracts from the upper position of the substrate holding part 13.

[0204] In this state, the robotic arm of the handling device 3a, such as Figure 6 As indicated by arrow A, the glass substrate 11 is conveyed to the membrane chamber 4 through the transport port 4a. The glass substrate 11 is then transported by the robotic arm of the transport device 3a into the back space 46 inside the platform chamber 4n. The robotic arm of the transport device 3a supports the glass substrate 11 above the substrate holding portion 13 of the rotating support mechanism 10 in the back space 46.

[0205] First, the robotic arm of the handling device 3a supports the glass substrate 11 in a state that is approximately parallel to the substrate holding portion 13. In this state, as... Figure 6 As shown by arrow A, the robotic arm of the transport device 3a inserts the glass substrate 11 into the inner space of the film-forming chamber 4 from the side in a direction parallel to the surface of the substrate holding part 13, until the glass substrate 11 reaches the position above the plurality of lifting pins 50 protruding from the substrate holding part 13.

[0206] Next, the robotic arm of the transport device 3a approaches the substrate holding part 13 and moves towards it. Figure 6 The glass substrate 11 descends in the direction indicated by arrow B. As a result, the glass substrate 11 is aligned with a predetermined position within the surface of the substrate holding portion 13, and the glass substrate 11 is placed on the lifting pin 50 of the substrate holding portion 13. The glass substrate 11 is transferred from the transport device 3a to the lifting pin 50. Next, the arm of the transport device 3a retracts from the film-forming chamber 4 to the transport chamber 3, and the transport port 4a of the film-forming chamber 4 is closed. The film-forming chamber 4 is depressurized to a vacuum state by the high-vacuum exhaust section of the gas atmosphere setting mechanism 4g.

[0207] Then, the lifting pin moving device moves the lifting pin 50 towards Figure 6 The arrow points downwards in the direction indicated by B. The lifting pin 50 is housed on the lower side of the substrate holding portion 13, thereby... Figure 7 As shown, the glass substrate 11 is placed on the substrate holding portion 13.

[0208] At this time, in the substrate holding part 13, the abutting part located at the front end of the support pin abuts against the back side 11B of the glass substrate 11 to support the glass substrate 11.

[0209] Next, driven by the clamp drive moving device, the clamp is swung to a support position close to the substrate holding part 13, and the peripheral end face of the glass substrate 11 abuts against the multiple clamps. In this state, the clamp aligns the glass substrate 11 to the film forming processing position. The clamp locks the peripheral edge of the glass substrate 11. Thus, the glass substrate 11 is held on the rotating support mechanism 10. At this time, the weight of the glass substrate 11 is supported by the support pins provided on the substrate holding part 13.

[0210] With the substrate holding portion 13 supporting the glass substrate 11 in a horizontal transport position, as follows: Figure 7 As shown, the center of gravity Gh of the rotating support mechanism 10 is located between the rotation axis 12 and the front end 13a. That is, as Figure 2 and Figure 7 As shown, the center of gravity Gh is located to the left of the rotation axis 12 in the X direction.

[0211] Next, the rotating shaft 12 rotates via the rotation drive unit 12A. Thus, as... Figure 7 and Figure 8 As indicated by arrow C, the substrate holding part 13, mounted via the stage part 12a and the frame part 14, rotates around the rotation center of the rotation axis 12. Thus, the substrate holding part 13 rotates upright to achieve a film-forming upright position. During the rotation operation, the glass substrate 11 remains in contact with the support pins and clamps and is held by the substrate holding part 13.

[0212] When the substrate holding part 13 reaches the film upright position, the rotation operation is stopped by controlling the rotation axis 12 through the rotation drive part 12A.

[0213] At this time, when the substrate holding portion 13 approaches the film-forming upright position, a magnetic force is generated between the magnet of the non-contact stop portion 10mg provided on the front end 13a and the magnet of the non-contact stop portion 10mg near the upper part of the mask 20. Through the magnetic force generated by the magnets between them, the rotation of the substrate holding portion 13 is delayed, and the rotational movement of the substrate holding portion 13 is stopped in such a way that the substrate holding portion 13 does not contact the mask 20.

[0214] When the substrate holding portion 13 reaches the film-forming upright position, the film-forming opening 20b is essentially closed by the glass substrate 11 and the substrate holding portion 13. In the film-forming upright position, the front end 13a is slightly closer to the transport port 4a in the horizontal direction than the rotation axis 12. That is, the substrate holding portion 13 is not in a position that is exactly upward in the vertical direction from the rotation axis 12, but is tilted slightly upward with the front surface 11T of the glass substrate 11 facing upward. The tilt angle at this time is called the tilt angle.

[0215] With the substrate holding portion 13 supporting the glass substrate 11 in the upright position for film formation, as follows: Figure 8 As shown, the center of gravity Gv of the rotating support mechanism 10 in the X direction is closer to the front end 13a in the X direction than the position of the rotation axis 12 in the X direction. In other words, in Figure 2 and Figure 8 In the middle, the center of gravity Gv is located slightly to the left of the rotation axis 12 in the X direction.

[0216] exist Figure 2 and Figure 8 In this configuration, the center of gravity Gv is located slightly to the left of the straight line RL passing through the center of rotation of the rotation axis 12 in the vertical direction. The range of movement from the center of gravity Gh to the center of gravity Gv during the rotation operation does not cross the straight line RL extending in the Z direction from the center of rotation of the rotation axis 12.

[0217] Thus, relative to the straight line RL, the center of gravity Gh in the horizontal transport position and the center of gravity Gv in the vertical film formation position are located on the same side in the X direction. Specifically, in Figure 8 In this configuration, the centers of gravity Gh and Gv are located to the left of the straight line RL. In other words, the centers of gravity Gh and Gv are not located to the right of the straight line RL. Therefore, regarding the torque load (torque) applied from the substrate holding part 13 to the rotation axis 12, although the magnitude of the torque load changes with the rotation operation, the direction of the torque load applied to the rotation axis 12 will not be reversed.

[0218] In other words, the torque applied to the rotation axis 12 is represented by the product of the center of gravity of the substrate holding portion 13 and the distance between the rotation axis 12 and the substrate holding portion 13. When the substrate holding portion 13 moves along... Figure 8 When the direction of arrow C is rotated, the torque acts in the counterclockwise direction.

[0219] In the direction of rotation, since the center of gravity Gv does not exceed the straight line RL, the torque will not act in the clockwise direction.

[0220] Therefore, even at the end of the rotation operation when the film is in an upright position, the torque applied to the rotation shaft 12 remains in the same direction as the torque applied during the rotation operation from the horizontal transport position at the start of the rotation operation. Thus, even if the minute gaps between the structural components constituting the rotation support mechanism 10 expand, the direction of the torque caused by the shift of the center of gravity of the substrate holding portion 13 does not change, and therefore no impact is generated due to the narrowing of the minute gaps between the structural components. Thus, even if the center of gravity of the substrate holding portion 13 shifts due to the rotation of the rotation shaft 12, displacement and impact generated between the structural components can be suppressed in the rotation support mechanism 10.

[0221] Simultaneously with the substrate holding portion 13 reaching the film upright position, such as Figure 8 As shown, the glass substrate 11 is close to the mask 20. The glass substrate 11 is located at the boundary position 4b between the front space 45 and the back space 46 inside the stage chamber 4n.

[0222] In this state, the mask 20 is aligned using the mask alignment unit. The mask alignment unit aligns the mask 20 with the in-plane position of the glass substrate 11. Specifically, the in-plane relative position of the mask 20 and the glass substrate 11 is detected by an imaging device (not shown). Based on the detection result, the mask 20 is driven by the mask alignment unit to align the mask 20 with the contour of the glass substrate 11.

[0223] After the alignment of the mask 20 within its surface is completed, the mask alignment section moves the mask 20 in a direction perpendicular to its surface. This brings the mask 20 into contact with the glass substrate 11. At this time, the substrate holding section 13, located in the vertical film-forming position (vertical processing position, film-forming vertical position), does not move from the vertical processing position. To bring the mask 20 closer to the glass substrate 11, the mask 20 is driven to move in a direction closer to the glass substrate 11. This brings the mask 20 into contact with the glass substrate 11.

[0224] At this time, the glass substrate 11 is under pressure other than its own weight, and the pressure is not exerted by the support pin.

[0225] Furthermore, even after the mask 20 contacts the glass substrate 11, the mask 20 is kept in close contact with the glass substrate 11. To this end, the mask 20 is driven so that the mask 20 and the glass substrate 11 are closer together in a direction perpendicular to the surface of the mask 20. At this time, the substrate holding portion 13, which is in the film-forming upright position, is not driven.

[0226] As the mask 20 moves, the glass substrate 11 in contact with the mask 20 is pressed by the mask 20. As a result, the support pin and the clamp are pressed by the glass substrate 11.

[0227] In this way, the substrate holding part 13 rotates to the film-forming upright position, so that the glass substrate 11 and the mask 20 are in close contact. At the same time, inside the stage chamber 4n, the boundary position 4b between the front space 45 and the back space 46 is blocked. At the boundary position 4b, the glass substrate 11 is exposed from the opening formed by the mask frame 20a, i.e., the film-forming port 20b, to the front space 45. The glass substrate 11 is positioned opposite to the back plate 6. The back plate 6 is surrounded by the walls of the stage chamber 4n relative to the direction opposite to the glass substrate 11.

[0228] When the substrate holding part 13 is positioned in the film-forming upright position, the glass substrate 11 held on the rotating support mechanism 10 is in close contact with the mask 20. When the substrate holding part 13 is positioned in the film-forming upright position, the glass substrate 11 is held with its front surface 11T approximately parallel to the front surface of the back plate 6. In this state, a film-forming process is performed in the front space 45 within the film-forming chamber 4, and a film is formed on the front surface 11T of the glass substrate 11.

[0229] In the film formation process, sputtering gas and reactive gas are supplied from the gas inlet of the gas atmosphere setting mechanism 4g to the front space 45 of the film formation chamber 4. During the film formation process, a sputtering voltage is applied to the backplate 6 from an external power source 4p. Additionally, during the film formation process, a predetermined magnetic field is formed on the target 7 via the magnetron magnetic circuit. Simultaneously, necessary shaking or rotation operations are performed on the backplate 6 or the magnetron magnetic circuit.

[0230] Thus, ions of the sputtering gas are excited by plasma generated in the front space 45 of the film-forming chamber 4. The ions of the sputtering gas collide with the target 7 of the backplate 6, causing particles of the film-forming material to fly out. Then, the particles of the film-forming material that fly out of the target 7 combine with the reactive gas, and the combined particles of the film-forming material and the reactive gas adhere to the glass substrate 11. Thus, a predetermined film is formed on the front side 11T of the glass substrate 11.

[0231] After the film formation process is completed, the mask 20 is moved from the front surface 11T of the glass substrate 11 in a direction perpendicular to the surface of the mask 20 via the mask alignment section. This separates the mask 20 from the glass substrate 11.

[0232] Next, the rotation shaft 12 is rotated by the rotation drive unit 12A. The substrate holding unit 13 is in contact with... Figure 8 and Figure 7In the opposite direction to arrow C, the glass substrate 11 rotates from the upright position to the horizontal transport position around the rotation center of rotation axis 12. During the rotation operation, the substrate holding part 13 maintains the state of the glass substrate 11 after film deposition.

[0233] During the rotational operation from the upright position of film formation to the horizontal transport position, the range of movement from the center of gravity Gv to the center of gravity Gh accompanying the rotational operation does not cross the rotation center of the rotation axis 12 in the X direction.

[0234] Therefore, the direction of the torque applied to the rotation shaft 12 remains the same as the torque at the upright position, even as the rotation operation begins from the point of rotation (from the upright position) and continues until it reaches the horizontal transport position (the endpoint). Thus, even if the minute gaps between the structural components of the rotation support mechanism 10 widen, the direction of the torque caused by the shift of the center of gravity of the substrate holding portion 13 does not change, preventing impacts caused by the narrowing of these gaps. Consequently, even if the center of gravity of the substrate holding portion 13 shifts due to the rotation of the rotation shaft 12, displacement and impacts between the structural components can be suppressed in the rotation support mechanism 10.

[0235] By rotating the rotating shaft 12, the substrate holding part 13 rotates and reaches the horizontal transport position. After reaching the horizontal transport position, the clamp is rocked from the support position to the outward position, so that the clamp moves away from the periphery of the glass substrate 11 and releases the clamp from the glass substrate 11.

[0236] Next, the lifting pin 50 is raised by the lifting pin moving device, causing the lifting pin 50 to protrude from the front of the substrate holding portion 13. With the glass substrate 11 supported by the raised lifting pin 50, the robotic arm of the transport device 3a is inserted between the glass substrate 11 and the substrate holding portion 13. The robotic arm of the transport device 3a moves the glass substrate 11 from the substrate holding portion 13 towards the substrate holding portion 13. Figure 6 Arrow B rises in the opposite direction. The conveying device 3a moves in the opposite direction. Figure 6 The glass substrate 11 is removed from the film-forming chamber 4 through the transport port 4a, moving in the opposite direction to arrow A.

[0237] Finally, the glass substrate 11, after the film-forming process is completed, is moved from the loading and unloading chamber 2 to the outside of the substrate processing apparatus 1 via the transfer chamber 3. Alternatively, other processing can be performed on the glass substrate 11 in other chambers.

[0238] Thus, the film formation process in the substrate processing apparatus 1 is completed.

[0239] <Maintenance Methods>

[0240] Next, the maintenance method in the substrate processing apparatus 1 according to this embodiment will be described.

[0241] Figures 9-10 This is a schematic side view showing the maintenance process performed in the film-forming chamber 4 in this embodiment.

[0242] Furthermore, the maintenance method for film-forming chamber 4, one of the two film-forming chambers 4 and 4A, will be described in the following explanation. Since the maintenance method is the same for both film-forming chambers 4 and 4A, the description of film-forming chamber 4A will be omitted.

[0243] During maintenance of the substrate processing apparatus 1, the substrate holding part 13 of the rotary support mechanism 10 is positioned in a horizontal transport position in the film deposition chamber 4. During maintenance, the glass substrate 11 is not moved into the substrate processing apparatus 1.

[0244] Next, after setting the internal pressure of the film-forming chamber 4 to atmospheric pressure, the film-forming chamber 4 is decomposed from the docking surface 4d into a plasma chamber 4m and a plateau chamber 4n. Then, the plasma chamber 4m and the plateau chamber 4n are aligned... Figure 9 The direction indicated by arrow D is separated. Thus, the connecting end 41 of the plasma chamber 4m that forms the docking surface 4d is separated from the connecting end 43 of the stage chamber 4n.

[0245] At this point, the plasma chamber 4m is moved from the position where it is assembled with the platform chamber 4n and the docking surface 4d via the moving mechanism 4mt to the position required for maintenance. The moving mechanism 4mt is a known mechanism, which only requires a moving position limiting track, a drive source, drive wheels, and a moving trolley.

[0246] In this state, such as Figure 9 As shown, the back plate 6 protrudes from the connecting end 41 of the mating surface 4d forming the plasma chamber 4m toward the stage chamber 4n. The connecting end 41 of the plasma chamber 4m does not extend in a manner that covers the top of the back plate 6. That is, the back plate 6 is exposed in the space above the plasma chamber 4m.

[0247] Next, if the separation distance between the plasma chamber 4m and the stage chamber 4n is sufficiently obtained, the cathode unit 5, including the back plate 6 which functions as a substrate processing unit, is removed from the plasma chamber 4m.

[0248] At this point, a lifting mechanism such as a crane can be used in the space above the plasma chamber 4m. Specifically, the lifting mechanism is positioned close to the top of the plasma chamber 4m, and the cathode unit 5, which has a backplate 6 and a target 7, is mounted on the lifting mechanism. In this state, the lifting mechanism moves towards... Figure 10The cathode unit 5 is hoisted upwards in the direction indicated by arrow E. In this state, the cathode unit 5, which is fixed 4m to the plasma chamber, is disassembled, causing the cathode unit 5 to... Figure 10 Move it in the upward direction as indicated by arrow E. Then, perform the prescribed maintenance, such as cleaning, on the cathode unit 5.

[0249] Furthermore, when replacing the cathode unit 5, the new cathode unit 5, lifted down by the crane, is aligned with... Figure 10 Arrow E descends in the opposite direction. The new cathode unit 5 is fixed at the designated position within the plasma chamber 4m.

[0250] In addition, if the separation distance between the plasma chamber 4m and the stage chamber 4n is sufficiently obtained, the mask 20 is removed from the stage chamber 4n.

[0251] At this time, similar to the case of cathode unit 5 described above, a lifting mechanism such as a crane is used to move the mask 20 towards... Figure 10 Move in the direction indicated by arrow F. At this time, after the mask 20 fixed to the stage chamber 4n is removed from the mask support 20g, move the mask 20 towards... Figure 10 Move it in the direction indicated by arrow F. Then, perform the prescribed maintenance such as cleaning on mask 20.

[0252] Furthermore, when replacing the mask 20, the new mask 20 lowered by the crane is oriented towards the... Figure 10 The arrow F moves in the opposite direction. Within the platform chamber 4n, the mask 20 is fixed at a predetermined position on the mask support 20g.

[0253] Thus, the boundary position 4b between the front space 45 and the back space 46 is located inside the platform chamber 4n, which is formed by assembling the plasma chamber 4m and the platform chamber 4n. Therefore, when disassembling the cathode unit 5 from the plasma chamber 4m, the work efficiency can be improved and the work time can be shortened.

[0254] According to the substrate processing apparatus 1 of this embodiment, in the substrate holding portion 13 that can rotate between a horizontal transport position and a film-forming upright position, the range of movement between the center of gravity Gh and the center of gravity Gv of the substrate holding portion 13 during the rotation operation does not cross the straight line RL extending vertically from the rotation axis 12. Therefore, even if the substrate holding portion 13 reaches the film-forming upright position, which is the end point of the rotation operation, and even if the substrate holding portion 13 exists between the horizontal transport position and the film-forming upright position during the rotation operation, the direction of the torque applied to the rotation axis 12 is the same. That is, in Figures 6-8 In this configuration, the direction of the torque applied to the rotation axis 12 is counterclockwise. In other words, the direction of the torque applied to the rotation axis 12 will not be opposite. That is, the direction of the torque applied to the rotation axis 12 will not be clockwise.

[0255] Therefore, even if the rotation of the rotation axis 12 causes the center of gravity of the substrate holding portion 13 to shift, displacement and impact between the structural components constituting the rotation support mechanism 10 can be suppressed. Thus, even when the substrate holding portion 13 is rotated while a large substrate with a side length exceeding 1800 mm is supported, excessive impact can be suppressed, and the following effects can be obtained.

[0256] • It can suppress the variation of load generated on the substrate holding part 13.

[0257] • It can suppress backlash generated in the drive gear that constitutes the reducer that imparts rotational force to the rotating shaft 12.

[0258] • It can suppress the torsion generated on the rotating shaft 12.

[0259] • It can suppress deformation such as deflection in the substrate holding part.

[0260] • It can suppress changes in the gaps between the structural components of the rotating support mechanism 10.

[0261] • It can suppress the offset between the structural components of the rotating support mechanism 10.

[0262] • It can suppress the movement of the substrate holding part 13 across the straight line RL extending vertically from the rotation axis 12.

[0263] Therefore, it is possible to suppress the distance variation between the back plate 6 and the front surface 11T of the glass substrate 11 when the substrate holding part 13 is positioned in the film-forming upright position. Furthermore, it is possible to suppress the distance variation between the substrate holding part 13 and the mask 20, and to suppress the intrusion of processing gas from the film-forming opening 20b into the back-side space 46. Simultaneously, in plasma processing where a specific potential needs to be set, such as a floating potential, the glass substrate 11 and the mask 20 will not inadvertently come into contact and become conductive, and the electrical state will not change. Thus, it is possible to suppress variations in film-forming conditions and improve processing characteristics such as film thickness.

[0264] According to this embodiment, when a film is formed on a glass substrate 11 by sputtering, damage such as cracks and gaps in the glass substrate 11 being processed is prevented due to the rotational operation of the substrate holding portion 13 in the rotating support mechanism 10. Simultaneously, by appropriately maintaining the distance between the mask 20 and the glass substrate 11 in the rotating support mechanism 10, the potential state required for sputtering is maintained, thereby preventing deterioration of film formation characteristics. Furthermore, by suppressing particle generation, deterioration of film formation characteristics can be prevented.

[0265] <Variation Example>

[0266] The surface treatment performed in the substrate processing apparatus 1 according to the above embodiment is sputtering, but the surface treatment is not limited to sputtering. Deposition processing may also be performed instead of sputtering. In this case, the substrate processing unit has a deposition source. The deposition processing is performed in the plasma chamber 4m.

[0267] While preferred embodiments and variations of the invention have been described above, it should be understood that these are exemplary cases and should not be considered limiting. Additions, omissions, substitutions, and other changes may be made without departing from the scope of the invention. Therefore, the invention should not be considered limited by the foregoing description.

[0268] Explanation of reference numerals in the attached figures

[0269] 1. Substrate processing apparatus (sputtering apparatus, film deposition apparatus)

[0270] 2 Loading and unloading chamber (cavity) 2A Loading and unloading chamber (cavity)

[0271] 3. Transport chamber (transfer chamber, cavity) 3a. Transport device

[0272] 4. Film-forming chamber (cavity) 4a. Transport port

[0273] 4A Film-forming chamber (cavity) 4b Boundary location

[0274] 4D docking surface 4G gas atmosphere setting mechanism

[0275] 4m plasma chamber (processing chamber) 4mt moving mechanism

[0276] 4n platform chamber (back chamber) 4p power supply

[0277] 5. Cathode unit (substrate processing section) 6. Backplate (cathode electrode)

[0278] 7 targets

[0279] 10 Rotary support mechanism (table mechanism) 10mg Non-contact stopping part

[0280] 11 Glass substrate (substrate) 11B Back side

[0281] 11T front 12 rotating axis

[0282] 12a Platform Section 12A Rotary Drive Section

[0283] 12r axis, 13 substrate holding section (platform)

[0284] 13a Front-end 14 Framework Department

[0285] 14a Axial arm 14b Window

[0286] 14f flange portion 14r radial arm portion

[0287] 15 Bolts (fastening components) 16a First mounting plane

[0288] 16b Second mounting plane 17 Sliding prevention part

[0289] 17a Protrusion (first engaging part) 17b Recess (second engaging part)

[0290] 20 mask 20a mask frame

[0291] 20b film-forming port, 20g mask support

[0292] 40, 42 Openings; 41, 43 Connecting ends

[0293] 44 Interior space 45 Front space

[0294] 46 rear side space 50 lifting pin

[0295] Rr Rotatable Range

Claims

1. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: The substrate is subjected to surface treatment in the processing chamber. A back chamber, adjacent to the processing chamber, has a transport port for the substrate to pass through, and supports the substrate during surface treatment in the processing chamber; A mask, disposed within the rear chamber, is erected in a manner opposite to the processing chamber; and A rotary support mechanism includes a rotating shaft capable of rotating about a rotation center and a substrate holding portion mounted on the rotating shaft and capable of supporting the substrate in the rear chamber. The rotary support mechanism is used to rotate the substrate holding portion, on which the substrate is supported, between a horizontal transport position and a film-forming upright position. At the horizontal transport position of the substrate, the substrate holding portion supports the substrate in a horizontal direction, so that the substrate can move in the horizontal direction via the transport port. In the film-forming upright position of the substrate, the substrate holding portion supports the substrate such that the substrate is opposite to the mask during surface treatment of the substrate. In the rotational direction of the substrate holding portion from the horizontal transport position to the film-forming upright position, the position of the center of gravity of the substrate holding portion in the film-forming upright position does not exceed the position directly above the rotation axis in the vertical direction. In the upright film-forming position, the substrate is in close contact with the mask, and a film is formed on the substrate. The rotary support mechanism includes: The platform is integrally formed with the rotating shaft; The flange portion is integrally formed with the substrate holding portion; and Fastening components, passing through the flange portion and fastening it to the platform portion. The platform portion has a first mounting surface that abuts against the flange portion. The flange portion has a second mounting surface that abuts against the platform portion. The first mounting plane is a plane along the axial direction of the rotation axis and tangentially to the outer peripheral surface of the rotation axis. With the first mounting plane abutting against the second mounting plane, the substrate holding portion is fastened to the rotation axis by the fastening member that passes through the flange portion in the direction intersecting the second mounting plane.

2. The substrate processing apparatus according to claim 1, wherein, A first engaging portion is formed on the first mounting plane. A second engaging portion is formed on the second mounting plane. When the first mounting plane and the second mounting plane are in contact, the first engaging part and the second engaging part engage with each other.

3. The substrate processing apparatus according to claim 1, wherein, The rotating support mechanism has a non-contact stop part, which stops the substrate holding part in the film-forming upright position during the rotation drive that rotates the substrate holding part from the horizontal transport position to the film-forming upright position.

4. The substrate processing apparatus according to claim 1, wherein, The mask is positioned between the boundary between the processing chamber and the back chamber and the substrate located in the film-forming upright position.

5. The substrate processing apparatus according to claim 1, wherein, The processing chamber has a substrate processing unit, which is opposite to the mask and performs surface treatment on the substrate. The substrate processing section protrudes into the back chamber from the boundary position between the processing chamber and the back chamber.

6. The substrate processing apparatus according to claim 5, wherein, The substrate processing section has a deposition source. Deposition treatment is carried out in the processing chamber.

7. The substrate processing apparatus according to claim 5, wherein, The substrate processing section has a cathode electrode. Sputtering is performed in the processing chamber.

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