Substrate processing apparatus

Abstract

This invention relates to a substrate processing apparatus, comprising: a processing chamber having an internal space; a base for placing a substrate in the internal space and spaced apart from the sides of the processing chamber; a spray head for supplying process gas from the upper side of the substrate placed on the base; an extraction channel formed in a continuous annular shape around the bottom surface of the processing chamber, recessed downwards from the bottom surface of the processing chamber, and having extraction holes communicating with the internal space; and a discharge channel for discharging gas flowing into the extraction channel. Because the extraction channel is formed on the bottom surface of the internal space of the processing chamber, the process gas supplied from the spray head first flows towards the substrate and then flows vertically through the gap between the base and the sides of the internal space, maintaining a stable and constant flow of gas around the substrate, enabling uniform processing across the entire surface of the substrate.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that maintains uniform flow of gas within a processing chamber during a substrate processing process using gas, thereby enabling uniform processing across the entire surface of the substrate. Background Technology

[0002] Typically, plasma-enhanced chemical vapor deposition (PECVD) equipment is used in display manufacturing or semiconductor manufacturing processes to deposit insulating films, protective films, oxide films, metal films, etc., on substrates using chemical reactions of gases under vacuum.

[0003] Figure 1 This is a longitudinal cross-sectional view showing an example of a substrate processing apparatus. (See attached image.) Figure 1 As shown, the substrate processing apparatus 9 includes: a plurality of processing chambers 11 and 21 having internal spaces 11c and 21c isolated from the outside to maintain a vacuum state during the deposition process; bases 12 and 22, which are vertically and vertically disposed inside the processing chambers 11 and 21 for placing the substrate W; spray heads 13 and 23 for supplying process gases, including source gases as deposition materials, into the interior of the processing chambers 11 and 21; gas supply units 19 and 29 for supplying process gases to the spray heads 13 and 23; exhaust channels 14 and 24 for discharging the gases supplied to the processing chambers 11 and 21 to the outside of the internal spaces 11c and 21c; and discharge channels 15 and 25 extending from the exhaust channels 14 and 24, respectively.

[0004] The exemplary structure in the attached drawings includes two processing chambers 11 and 21, with a fixed body 30 arranged at the boundary of each processing chamber 11 and 21. In addition, discharge channels 15 and 25 for discharging gas from each processing chamber 11 and 21 converge on the underside of the fixed body 30 to form a common discharge channel 40.

[0005] To maintain a vacuum state inside the processing chambers 11 and 21 while allowing the bases 12 and 22 to move up and down, bellows can be arranged to isolate them from external air. Thus, with the substrate W placed on the bases 12 and 22, the interior of the processing chambers 11 and 21 is adjusted to a vacuum state below atmospheric pressure. Process gases are supplied to the processing chambers 11 and 21 through spray heads 13 and 23. By applying a continuous power supply from the RF power supply unit, plasma is generated inside the processing chambers 11 and 21, thereby forming a film of a predetermined thickness on the surface of the substrate W.

[0006] As one of the substrate processing processes, the film formation process involves the process gas supplied by the spray heads 13 and 23 flowing downward from the upper side of the substrate W 52 and generating plasma on the upper side of the substrate. Due to the suction pressure, the plasma flows into the suction channels 14 and 24, where the pressure is maintained lower than that of the internal spaces 11c and 21c, through the suction holes 14a and 24a formed on the sides of the processing chambers 11 and 21. The plasma is then discharged to the outside through the discharge channels 15 and 25 extending from the suction channels 14 and 24 and the common discharge channel 40 in sequence through 54 and 55.

[0007] The suction pressure is applied to the suction channels 14 and 24 to expel the gas inside the processing chambers 11 and 21 to the outside, and this suction pressure is applied through the common exhaust channel 40. Thus, as... Figure 3 The flow analysis results of the exhaust channels 14 and 24 shown indicate the following problem: normal flow occurs in the part of exhaust channel 24 that is used to apply the suction pressure and is connected to the discharge channels 15 and 25, while almost no flow occurs in the part of exhaust channel 24 that is away from the discharge channels 15 and 25.

[0008] The above phenomenon is achieved through Figure 4 The flow rate analysis results for the shown extraction channels 14 and 24 were also confirmed. That is, as... Figure 4 As shown, the following problem exists: the flow rate in the suction channel 24 of the portion EE used to apply the suction pressure and connected to the discharge channels 15, 25 is fast enough, but almost no flow occurs in the suction channel 24 of the portion XX opposite to the discharge channels 15, 25. That is, the suction channel 24 of the portion XX opposite to the discharge channels 15, 25 cannot smoothly draw in the gas inside the processing chambers 11, 21.

[0009] The aforementioned phenomena result in uneven thickness of the deposited film on the surface of substrate W. Therefore, there is an urgent need to propose a solution that uniformly discharges the gas supplied to the internal spaces 11c and 21c of processing chambers 11 and 21 throughout the entire circumferential direction.

[0010] Furthermore, eddies 88 are also generated on the lower side of the bases 12 and 22 of the processing chambers 11 and 21, and there is also the problem that the efficiency of the process gas supplied to the processing chambers 11 and 21 to be discharged to the outside of the processing chambers decreases.

[0011] The components and functions described above were not disclosed prior to the filing date of this application, but are used to illustrate the technology of this invention in a comparative manner. Summary of the Invention

[0012] Technical issues

[0013] In order to solve the problems mentioned above, the object of the present invention is to maintain the symmetrical flow of gas in the processing chamber relative to the substrate during the substrate processing process using gas in the processing chamber, so as to enable the processing process to be performed uniformly on the entire surface of the substrate.

[0014] Technical solution

[0015] To achieve the objectives described above, the present invention provides a substrate processing apparatus, comprising: a processing chamber having an internal space formed therein; a base for placing a substrate in the internal space and arranged spaced apart from the side of the processing chamber; a spray head for supplying process gas from the upper side of the substrate placed on the base; an exhaust channel formed in a continuous annular shape around the bottom surface of the processing chamber, recessed downwards from the bottom surface of the processing chamber, and having an exhaust hole communicating with the internal space; and a discharge channel for discharging gas flowing into the exhaust channel.

[0016] The purpose is to maintain a constant flow of gas around the substrate by forming an exhaust channel on the bottom surface of the internal space of the processing chamber, so that the process gas supplied from the spray head flows to the substrate and then flows vertically through the gap between the base and the side of the internal space.

[0017] In particular, the vent is arranged at the position where the side surface of the internal space meets the bottom surface of the internal space. At the position where the side surface of the internal space meets the bottom surface of the internal space, the suction pressure acts on the internal space, causing the process gas to flow through the gap between the base and the side surface of the internal space and flow vertically along the side surface of the internal space, thereby maintaining a constant flow of gas around the substrate.

[0018] In addition, it further includes a buffer channel, which is separated from the exhaust channel by a partition wall and communicates with the exhaust channel through a through hole in the partition wall. The discharge channel communicates with the buffer channel to apply a suction pressure, so that the gas flowing into the exhaust channel is discharged through the buffer channel.

[0019] The purpose is to prevent gas from being discharged directly from the extraction channel to the exhaust channel, but rather through a buffer channel, thereby maintaining a uniform suction pressure applied to the extraction channel in the direction surrounding the processing chamber. Based on this, by maintaining a uniform amount of gas drawn into the extraction channel in the direction surrounding the processing chamber with the substrate as the center, and by maintaining a constant amount of process gas drawn into the bottom surface of the processing chamber along the circumferential direction, the gas around the substrate placed on the base forms a symmetrical flow centered on the substrate during the substrate processing process, thereby enabling uniform substrate processing across the entire substrate surface.

[0020] The buffer channel can use the side of the air extraction channel as the partition wall and arrange it in a ring on the outside of the air extraction channel, or the bottom surface of the air extraction channel can be used as the partition wall and arranged in a ring on the bottom of the air extraction channel.

[0021] The plurality of extraction holes and the plurality of through holes are arranged spaced apart around the side of the processing chamber. Thus, the extraction channel and the buffer channel are not completely connected, but are formed so that gas flows through the through holes.

[0022] At this point, the through hole and the exhaust hole are preferably arranged at different positions around the side of the processing chamber. Based on this, the gas flowing into the exhaust channel through the exhaust hole will not flow directly into the buffer channel, but will first flow inside the exhaust channel before flowing into the buffer channel, thus maintaining a constant overall flow state in the exhaust channel.

[0023] Furthermore, the sum of the opening cross-sections of the through holes is greater than the sum of the opening cross-sections of the extraction holes. Based on this, suction pressure can be smoothly applied from the common discharge channel to the extraction channel, while the gas in the processing chamber can be smoothly discharged to the outside through the extraction channel, buffer channel, and discharge channel in sequence.

[0024] At least one of the through hole and the extraction hole can be formed into a tapered shape with a cross-section that gradually decreases towards the discharge channel. Based on this, as the gas passes through the through hole and the extraction hole, the flow velocity gradually increases in the direction of the applied suction pressure, thereby further improving the gas extraction effect based on the suction pressure.

[0025] Furthermore, although the present invention can form an annular through portion between the buffer channel and the discharge channel, according to one embodiment of the present invention, a blocking wall is formed between the buffer channel and the discharge channel, and a plurality of discharge holes for connecting the buffer channel and the discharge channel are formed through the blocking wall, thereby inducing a uniform pressure distribution between the buffer channel and the discharge channel.

[0026] In addition, an Nth buffer channel is arranged between the buffer channel and the discharge channel, so that the gas flowing into the extraction channel passes through the buffer channel and the Nth buffer channel in sequence before being discharged through the discharge channel.

[0027] Furthermore, the system includes a top panel that is annular and has the aforementioned vent hole, situated between the venting channel and the interior space, serving to separate the venting channel from the interior space. This simplifies the process of installing the venting channel within the processing chamber.

[0028] The exhaust channel and buffer channel can be formed using an annular channel component. That is, the annular channel component has a top panel continuously arranged with the side of the processing chamber and a partition wall separating the exhaust channel and the buffer channel, forming an annular body for fitting around the recessed portion surrounding the side of the processing chamber. Based on this, the exhaust channel and buffer channel can be formed more easily.

[0029] At this point, a baffle plate may be further formed on the annular channel component, and the baffle plate has a plurality of discharge holes formed between the buffer channel and the discharge channel.

[0030] At least one of the extraction channel and the buffer channel forms a gas passage with a constant cross-section around the perimeter of the internal space. Based on this, by minimizing internal flow velocity fluctuations in the extraction channel and the buffer channel, a fixed amount of gas can be discharged from the internal space of the processing chamber into the extraction channel.

[0031] Furthermore, the present invention with the described structure can be a substrate processing apparatus formed by one processing chamber or a substrate processing apparatus formed by at least two processing chambers. That is, the substrate processing apparatus according to the present invention may include a first processing chamber unit 100 and a second processing chamber unit 200. The second processing chamber unit 200 further includes: a second processing chamber having a second internal space formed therein and arranged side-by-side with the processing chamber; a second base for placing a second substrate in the second internal space; a second spray head for supplying process gas from the upper side of the second substrate placed on the second base; a second exhaust channel formed in a continuous annular recess along the periphery of the second processing chamber on the bottom surface of the second processing chamber, and having a second exhaust hole communicating with the second internal space; and a second buffer channel spaced apart from the second exhaust channel by a second partition wall and communicating through a through hole in the second partition wall, the second buffer channel communicating with the discharge channel.

[0032] The terms "gas" and "process gas" as used in this specification and claims are collective terms for source gas, reactant gas, carrier gas, and modulating gas, defined to collectively refer to the various gases supplied in the processing chamber. Source gas is the primary film-forming material used in film formation on the upper surface of the substrate; reactant gas is used to react with the source gas, which is the primary film-forming material used in film formation on the upper surface of the substrate; carrier gas is used to supply specific gases to the processing chamber; and modulating gas is used during the modulation step within the processing chamber.

[0033] The term "circumferential direction" and similar terms used in this specification and claims refer to the direction of the closed section when the inner walls 110i and 210i of the internal space of the processing chamber are annular.

[0034] Beneficial effects

[0035] As described above, the present invention forms an exhaust channel on the bottom surface of the internal space of the processing chamber for discharging the process gas supplied to the processing chamber to the outside. This allows the process gas supplied from the spray head to undergo the processing process while flowing towards the substrate. The processed process gas flows vertically along the side of the internal space through the gap between the base and the side of the internal space, thereby maintaining a constant gas flow around the substrate.

[0036] More importantly, the present invention forms a buffer channel between the exhaust channel and the discharge channel for discharging the gas supplied to the interior space of the processing chamber, which is connected to the exhaust channel through a through hole. Therefore, the suction pressure applied from the discharge channel to the exhaust channel can be evenly distributed through the buffer channel and kept uniform in the circumferential direction of the processing chamber.

[0037] Based on this, the present invention uses a suction pressure that acts uniformly along the circumferential direction of the suction channel to minimize the deviation of the gas supplied to the internal space of the processing chamber in the circumferential direction while it flows into the suction channel. As a result, the gas supplied to the internal space of the processing chamber is discharged at a constant flow rate along the circumferential direction, thereby forming a symmetrical distribution of the gas flow field in the internal space of the processing chamber with the substrate as the center, and thus uniformly forming a deposition film on the entire surface of the substrate. Attached Figure Description

[0038] Figure 1 This is a longitudinal cross-sectional view showing the structure of a conventional substrate processing apparatus.

[0039] Figure 2 yes Figure 1 An enlarged view of part 'A'.

[0040] Figure 3 It is shown Figure 1 The graph shows the flow analysis results of the exhaust channel in the second processing chamber 21.

[0041] Figure 4 It is shown Figure 1 The figure shows the flow rate analysis results of the air extraction channel in the second processing chamber 21.

[0042] Figure 5 This is a longitudinal cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention.

[0043] Figure 6 yes Figure 5 An enlarged view of part 'B'.

[0044] Figure 7a It is along Figure 5 Cross-sectional view of the cutting line X1-X1.

[0045] Figure 7b It shows along Figure 5 The cross section of the middle cutting line X1-X1 corresponds to a cross section view of another embodiment of the present invention.

[0046] Figure 8 This is a longitudinal cross-sectional view showing the structure of the substrate processing apparatus according to the second embodiment of the present invention.

[0047] Figure 9 yes Figure 8 An enlarged view of part 'C'.

[0048] Figure 10 This illustrates a substrate processing apparatus according to yet another embodiment of the present invention. Figure 5 The structure corresponding to the 'B' part.

[0049] Figure Labels

[0050] 1: Substrate processing apparatus 100: First processing chamber unit

[0051] 110: Processing Room 111: Interior Space

[0052] 120: Base; 130: Spray head

[0053] 200: Second processing chamber unit; 210: Second processing chamber

[0054] 211: Second internal space; 220: Second base

[0055] 230: Second spray head P1, P1': Air extraction channel

[0056] P2, P2′: Second exhaust channels; B1, B1′: Buffer channels

[0057] B2, B2′: Second buffer channels; E1, E1′: Discharge channels

[0058] E2, E2′: Second discharge channel; CE: Common discharge channel Detailed Implementation

[0059] Hereinafter, the substrate processing apparatus 1 according to the first embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in order to make the gist of the present invention clear, specific descriptions of the disclosed functions or structures will be omitted during the description of the present invention.

[0060] like Figure 5 and Figure 6As shown, the substrate processing apparatus 1 according to the first embodiment of the present invention includes: a pair of processing chambers 110, 210, each having an internal space 111, 211 isolated from the outside; bases 120, 220 for placing a substrate W in each internal space 111, 211; spray heads 130, 230 for supplying a process gas 92 from the upper side of the substrate W placed on the bases 120, 220; and exhaust channels P1, P2, which are formed in a continuous annular downward recess on the bottom surfaces 110s, 210s of the internal spaces 111, 211. Gas flows along the annular flow and communicates with the internal spaces 111 and 211 through the venting port a1; buffer channels B1 and B2 are separated from the venting channels P1 and P2 by partition walls w1 and w2, and communicate with the venting channels P1 and P2 through through holes z1 and z2 formed in the partition walls w1 and w2; discharge channels E1 and E2 communicate with the buffer channels B1 and B2, thereby forming a gas discharge passage; common discharge channel CE is formed by the convergence of two discharge channels E1 and E2 on the lower side of the fixed body 300 and is used to discharge gas.

[0061] Although the substrate processing apparatus according to the present invention can be configured to perform substrate processing processes in a single processing chamber unit 100, the present invention will be described below using a substrate processing apparatus 1 having a processing chamber unit 100 and a second processing chamber unit 200 as an example. Accordingly, the designations based on "second" in this specification and claims refer to components (210, 220, 230, P2, B2, E2...) of the second processing chamber unit 200, other than the first processing chamber unit 100 in the embodiments shown in the drawings. However, if, for convenience, the reference numerals (e.g., 120, 220) of the components corresponding to the first processing chamber unit 100 and the second processing chamber unit 200 are indicated together on a certain component (e.g., "base"), it can be considered as simultaneously referring to components of the first processing chamber unit 100 (e.g., base 120) and components of the second processing chamber unit 200 (e.g., second base 220).

[0062] The processing chambers 110 and 210 form internal spaces 111 and 211 that are isolated from external gases and maintained at a vacuum state below atmospheric pressure during the processing of the substrate W. For this purpose, the processing chambers 110 and 210 may have a pressure regulating unit (not shown) for controlling the internal pressure and a temperature regulating unit (not shown) for controlling the internal temperature.

[0063] The internal spaces 111 and 211 are formed in a shape corresponding to the shape of the substrate to be processed. For example, if a disk-shaped substrate W needs to be processed, the internal spaces 111 and 211 are formed into a cylindrical shape, the sides 110i and 210i of the processing chambers 110 and 210 form a circular cross section, and the sides of the processing chambers 110 and 210 form a circumferential direction.

[0064] Although not shown in the accompanying drawings, the internal spaces 111 and 211 of the processing chambers 110 and 210 may further include electrodes for providing pulsed power. Preferably, the power supply frequency is 13.56 MHz to 27.12 MHz, and the pulse frequency is 10 to 100 kHz, but is not necessarily limited to these. The pulsed power applied by the electrode 140 is continuously applied throughout the entire processing procedure, not only in the deposition step of the insulating film, but also in the modulation step, thereby generating plasma.

[0065] The bases 120 and 220 are configured to move vertically. When a substrate W flows into the processing chambers 110 and 210, the bases 120 and 220 can place the substrate W and maintain the distance from the bases 120 and 220 to the bottom surface of the spray heads 130 and 230 at a set value, so that the process gas supplied through the spray heads 130 and 230 can contact the entire surface of the substrate W evenly.

[0066] To form an insulating film, the substrate W placed on the bases 120 and 220 can be formed with at least a portion of a metal layer made of a conductive material exposed to the outside. The metal layer can be formed of various materials such as tungsten, or of copper (Cu) with excellent conductivity. The insulating film deposited on the metal layer of the substrate W can be a SiN film, a SiCN film, an oxide film, etc.

[0067] The bases 120 and 220 are also formed in a shape corresponding to the substrate to be processed. For example, if a disk-shaped substrate W is being processed, the bases 120 and 220 are formed in a disk shape to support the substrate W, and the sides 110i and 210i of the processing chambers 110 and 210 are spaced apart with a constant size from the bases 120 and 220 in the circumferential direction.

[0068] The spray heads 130 and 230 uniformly supply the process gas supplied by the gas supply units 150 and 250 to the substrate W. Therefore, if the substrate W is disc-shaped, the gas supply holes of the spray heads 130 and 230 are also arranged in a disc shape. Furthermore, the process gas supplied by the gas supply units 150 and 250 is uniformly distributed and supplied to the substrate W through the spray holes 132 and 232 of the spray heads 130 and 230.

[0069] In the deposition step of forming an insulating film on the surface of substrate W, source gas and reaction gas are supplied through spray heads 130 and 230, and carrier gas may be supplied as needed.

[0070] The exhaust channels P1 and P2 are formed in a continuous ring shape, recessed downwards from the bottom surfaces 110s and 210s of the internal spaces 111 and 211 of the processing chambers 110 and 210. If the cross-section of the internal spaces 111 and 211 is circular, then the exhaust channels P1 and P2 are also formed in a ring shape.

[0071] The extraction channels P1 and P2 are maintained at a pressure lower than that of the internal spaces 111 and 211, thereby guiding the process gas supplied by the spray heads 130 and 230 to flow downwards through the gaps between the bases 120 and 220 and the internal spaces 111 and 211 after the substrate processing, so that it flows from the internal spaces 111 and 211 into the extraction channels P1 and P2. For this purpose, a suction pump or the like is connected to the common discharge channel CE, thereby applying suction pressure to the extraction channels P1 and P2 through the discharge channels E1 and E2 and the buffer channels B1 and B2.

[0072] like Figure 5 and Figure 6 As shown, the exhaust channels P1 and P2 are separated by the top panel Su, which is located between the internal spaces 111 and 211 of the processing chambers 110 and 210 and the exhaust channels P1 and P2. The top panel Su forms a ring along the edge where the sides 110i and 210i of the processing chambers 110 and 210 meet the bottom surfaces 110s and 210s. The exhaust holes a1 and a2 are arranged in a peripheral direction and are formed in a continuous manner along the edge. The exhaust channels P1 and P2 can be interconnected with the internal spaces 111 and 211 through the exhaust holes a1 and a.

[0073] The upper surface of the top panel Su is arranged on the bottom surface of the processing chambers 110 and 210, so as to be continuous with the bottom surfaces 110s and 210s of the processing chambers 110 and 210 without creating a step. In addition, the inner panel Si is embedded in the side surfaces 110i and 210i of the processing chambers 110 and 210.

[0074] Thus, the extraction channels P1 and P2 are formed in a recessed manner on the bottom surfaces 110s and 210s along the edges where the sides 110i and 210i of the internal spaces 111 and 211 meet the bottom surfaces 110s and 210s. Furthermore, extraction holes a1 and a2 for connecting the extraction channels P1 and P2 with the internal spaces 111 and 211 are located on the edges where the sides 110i and 210i meet the bottom surfaces 110s and 210s.

[0075] Based on this, at the edge where the sides 110i and 210i of the internal spaces 111 and 211 meet the bottom surfaces 110s and 210s of the internal spaces 111 and 211, the suction pressure acts on the internal spaces. Therefore, the process gas flows through the gap between the bases 120 and 220 and the sides 110i and 210i of the internal spaces 111 and 211 and flows vertically along the sides of the internal spaces. This makes the gas flow more stable and constant around the substrate W, thereby enabling the deposition film to be formed on the entire surface of the substrate with a more uniform thickness.

[0076] In addition, the present invention is not limited to the structure shown in the figure, but also includes a structure in which the air extraction holes a1 and a2 are located at positions separated from the edge lines where the inner space 111 and 211 meet the side surfaces 110i and 210i and the bottom surfaces 110s and 210s.

[0077] The extraction holes a1 and a2 can also be formed as straight holes with a uniform cross-section, or as tapered holes (not shown) where the cross-section gradually decreases as the air flows from the internal spaces 111 and 211 into the extraction channels P1 and P2 into 93. If the extraction holes a1 and a2 are tapered holes, the flow velocity gradually increases as the air flows from the internal spaces 111 and 211 into the extraction channels P1 and P2 into 93, thus ensuring stable flow from the internal spaces 111 and 211 to the extraction channels P1 and P2 and helping to prevent backflow.

[0078] The exhaust channels P1 and P2 are passages with constant cross-sections along the circumferential direction of the internal spaces 111 and 211, thereby suppressing the acceleration or deceleration of the gas flowing in the annular exhaust channels P1 and P2 based on the cross-sectional changes of the exhaust channels P1 and P2.

[0079] like Figure 5 and Figure 6 As shown, the bottom surfaces of the air extraction channels P1 and P2 are used as partition walls w1 and w2, and buffer channels B1 and B2 are formed on the lower side of the air extraction channels P1 and P2 through the partition walls w1 and w2.

[0080] Multiple through holes z1 and z2 are formed in the partition walls w1 and w2. The suction pressure applied to the suction channels P1 and P2 is transmitted from the discharge channels E1 and E2 through the buffer channels B1 and B2. This suction pressure acts directly on the suction channels P1 and P2 from the discharge channels E1 and E2. Figure 1 and Figure 2 Compared to buffer channels B1 and B2, the action of buffer channels B1 and B2 on the suction channels P1 and P2 can reduce the deviation of the suction pressure applied to the suction channels P1 and P2 in the surrounding direction.

[0081] Therefore, the suction pressure deviation of the extraction channels P1 and P2 along the extended circumferential direction is greatly reduced. As a result, the gas flowing into the extraction channels P1 and P2 from the internal spaces 111 and 211 through the extraction holes a1 formed on the top panel Su can maintain a uniform flow rate per unit time in the circumferential direction. Based on this, the process gas around the substrate W in the processing process forms a symmetrical flow with the substrate W as the center. The deposition and other processing processes of the substrate W are carried out more uniformly on the entire surface of the substrate W, thereby obtaining beneficial effects.

[0082] like Figure 7a As shown, the diameter dz of the through holes z1 and z2 formed in the partition walls w1 and w2 is larger than the diameter da of the vent holes a1 and a2 formed in the top panel Su. Preferably, the sum of the opening cross-sections of the through holes z1 and z2 used to connect the venting channels P1 and P2 with the buffer channels B1 and B2 is greater than the sum of the opening cross-sections of the vent holes a1 and a2 used to connect the internal spaces 111 and 211 with the venting channels P1 and P2. Based on this, the suction pressure transmitted from the common exhaust channel CE acts smoothly on the venting channels P1 and P2, and the gas discharged from the internal spaces 111 and 211 to the common exhaust channel CE will not experience a flow bottleneck, ensuring smooth gas discharge.

[0083] The extraction vents a1 and a2 and the through vents z1 and z2 are distributed around the sides of the processing chamber and arranged in different positions. That is, as shown... Figure 7a As shown, the extraction holes a1, a2 and the through holes z1, z2 are arranged with deviations in the circumferential direction marked rr. Therefore, the gas flowing from the internal spaces 111, 211 into the extraction channels P1, P2 does not flow directly into the buffer channels B1, B2, but first flows along the circumferential direction inside the extraction channels P1, P2 before flowing into the buffer channels B1, B2. This minimizes the eddies generated in the extraction channels P1, P2, keeps the overall flow state constant, and thus keeps the gas discharge velocity of each process constant.

[0084] Similarly, the through holes z1 and z2 can also be formed as straight holes with a uniform cross-section, or as tapered holes (not shown) with a cross-section that gradually decreases as air flows from the extraction channels P1 and P2 into the buffer channels B1 and B2. If the through holes z1 and z2 are formed as tapered holes, the flow velocity gradually increases as air flows from the extraction channels P1 and P2 into the buffer channels B1 and B2, thereby stabilizing the flow from the extraction channels P1 and P2 into the buffer channels B1 and B2 and suppressing bottleneck phenomena caused by backflow.

[0085] Furthermore, the through holes z1 and z2 can be distributed in a number equal to or slightly different from the number of extraction holes a1 and a2, but if... Figure 7b As shown, the elongated holes in the slit shape are formed in a longer shape, so that the number of them can be significantly less than the number of suction holes a1 and a2. Specifically, the portion EE of the buffer channels B1 and B2 near the discharge channels E1 and E2 can have a slightly higher suction pressure than the opposite portion XX of the buffer channels B1 and B2 away from the discharge channels E1 and E2. The length rre of the elongated hole zx2 in the portion EE of the buffer channels B1 and B2 near the discharge channels E1 and E2 is less than the length rrx of the elongated hole zx2 in the portion XX of the buffer channels B1 and B2 away from the discharge channels E1 and E2. That is, the cross-section of the through hole in the portion EE of the buffer channels B1 and B2 near the discharge channels E1 and E2 is less than the cross-section of the through hole in the portion XX of the buffer channels B1 and B2 away from the discharge channels E1 and E2. Based on this, by reducing the suction pressure deviation along the circumferential direction in the suction channels P1 and P2, the deviation of the gas discharge flow rate per unit time along the circumferential direction of the substrate can be further reduced.

[0086] Alternatively, buffer channels B1 and B2 can also be formed as continuous loops along the same trajectory as extraction channels P1 and P2. That is, when... Figure 7a and Figure 7b When the through-hole is formed in the shape shown or other forms, the buffer channels B1 and B2 can be formed as a continuous ring. Additionally, as... Figure 7b As shown, if the through holes ze1 and zx1 of the exhaust channels P1 and P2 are locally dispersed in the exhaust channels P1 and P2, then the buffer channels B1 and B2 are only locally arranged and formed at the locations where the through holes ze1 and zx1 are arranged. That is, according to the present invention, the buffer channels B1 and B2 can be formed as a continuous ring, or they can be discretely arranged only at the locations where the through holes are arranged in order to distinguish them.

[0087] In the above structure, the process gas flowing from the extraction channels P1 and P2 into the buffer channels B1 and B2 94 flows through the discharge holes c1 and c2 into the discharge channels E1 and E2, and then flows out 96 to the outside of the substrate processing apparatus 1 through the discharge channels E1 and E2 of each processing chamber unit 100 and 200 and the common discharge channel CE that merges with the discharge channels E1 and E2 on the lower side of the fixture 300. The discharge holes c1 and c2 can be formed as slits extending along the direction of the buffer channels B1 and B2, or they can be formed as multiple through holes.

[0088] Furthermore, directly machining and forming the suction channels P1, P2 and buffer channels B1, B2 on the sides of the processing chambers 110, 210 requires strict process control and incurs high costs. Therefore, annular channel components 190, 290 are fabricated, which are formed with discharge holes c1, c2 for connecting the buffer channels B1, B2 and the discharge channels E1, E2. These annular channel components 190, 290 have a top panel Su with suction holes a1, a2, an outer panel So, an inner panel Si, and partition walls w1, w2 for separating the suction channels P1, P2 and the buffer channels B1, B2 and forming through holes z1, z2. Then, the pre-fabricated annular channel components 190, 290 are fitted into the downwardly recessed grooves formed on the bottom surfaces 110s, 210s of the processing chambers 110, 210s, thereby allowing for easy installation of the suction channels P1, P2 and the buffer channels B1, B2.

[0089] Additionally, refer to Figure 8 and Figure 9 The substrate processing apparatus 1 according to the second embodiment of the present invention will be described. However, in describing the components and functions of the second embodiment of the present invention, for components and functions that are the same or similar to those of the first embodiment described above, in order to make the main idea of ​​the second embodiment clear, the same or similar reference numerals will be assigned to the components of the first embodiment described above, and their descriptions will be omitted.

[0090] According to the second embodiment of the present invention, the substrate processing apparatus 1′ has two processing chamber units 100′0′ and 200′. Each processing chamber unit 100′ and 200′ is formed by the convergence of the air extraction channels P1′ and P2′, the buffer channels B1′ and B2′ and the common discharge channel CE to form discharge channels E1′ and E2′. From this point of view, it is similar to the components of the first embodiment described above.

[0091] In the second embodiment of the present invention, buffer channels B1′ and B2′ are arranged around the exhaust channels P1′ and P2′ on the outer radius of the exhaust channels P1′ and P2′, so that the partition walls w1′ and w2′ that separate the buffer channels B1′ and B2′ from the exhaust channels P1′ and P2′ form the outer surface of the exhaust channels P1′ and P2′ rather than the bottom surface of the exhaust channels P1′ and P2′.

[0092] Therefore, in the substrate processing process, the process gas supplied to the processing chambers 110′ and 210′ ​​is supplied to the internal spaces 111 and 211 through the spray heads 130 and 230. The process gas already used for processing on the upper side of the substrate flows vertically downward through the gap between the bases 120 and 220 and the internal spaces 111 and 211, and flows into the extraction channels P1′ and P2′ through the extraction holes a1′ and a2′. It then flows outward to the outer radius through the through holes z1′ and z2′ of the partition walls w1′ and w2′ that form the outer surfaces of the extraction channels P1′ and P2′, and flows into the buffer channels B1′ and B2′ before being discharged.

[0093] Similarly, the annular channel components 190′ and 290′ can also be used to form buffer channels B1′ and B2′ and exhaust channels P1′ and P2′.

[0094] Furthermore, according to another embodiment 1″ of the present invention, such as Figure 10 As shown, a baffle wall Sd is provided between the buffer channels B1, B2 and the discharge channels E1, E2 to separate the buffer channels B1, B2 from the discharge channels E1, E2. Furthermore, the baffle wall Sd can be configured to have multiple discharge holes c1″, c2″ formed along the circumferential direction, and the buffer channels B1, B2 and the discharge channels E1, E2 can only be connected through the discharge holes c1″, c2″. Based on this, compared to the first embodiment, the suction pressure deviation in the discharge channels B1, B2 can be further reduced, thus further reducing the suction pressure deviation along the circumferential direction in the suction channels P1, P2.

[0095] Among them, the opening cross-section of each discharge hole c1″ and c2″ is larger than the opening cross-section of each through hole z1 and z2, or the sum of the opening cross-sections of discharge holes c1′ and c2″ is greater than the sum of the opening cross-sections of through holes z1 and z2, so that the gas from buffer channels B1 and B2 to discharge channels E1 and E2 can flow smoothly without bottlenecks.

[0096] Similarly, the buffer channels B1, B2 and the exhaust channels P1, P2 can be formed by annular channel components, which further include a baffle plate Sd compared to the annular channel components 190, 290 of the first embodiment.

[0097] In addition, although the structure formed by a buffer channel B1, B2 is shown in the embodiment shown in the figure, an Nth buffer channel can also be arranged between the buffer channel B1, B2 and the discharge channel E1, E2, so that the gas flowing into the gas extraction channel P1, P2 passes through the buffer channel B1, B2 and the Nth buffer channel in sequence and is discharged through the discharge channel E1, E2, thereby further reducing the suction pressure deviation along the circumferential direction in the gas extraction channel P1, P2.

[0098] As described above, although the present invention has been described with reference to preferred embodiments, those skilled in the art should understand that various modifications and variations can be made to the combination of components of the embodiments of the present invention without departing from the technical concept and scope of the present invention as set forth in the appended claims.

[0099] For example, although the embodiment shown in the accompanying drawings is an example of a structure with a buffer channel, within the scope of the claims, a structure without a buffer channel and in which the exhaust channel is directly connected to the discharge channel also falls within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: The processing room has an internal space. A base for placing a substrate in the internal space and arranged spaced apart from the sides of the processing chamber; A spray head that supplies process gas from the upper side of a substrate placed on the base; An exhaust channel is formed along the edge where the side and bottom surfaces of the processing chamber meet, and is formed in a continuous ring around the bottom surface of the processing chamber, recessed downwards from the bottom surface of the processing chamber. A buffer channel, which is annularly formed with the air extraction channel separated by a partition wall, and is connected to the air extraction channel through a through hole in the partition wall; The top panel is located between the internal space of the processing chamber and the exhaust channel. Its upper surface is arranged on the bottom surface of the processing chamber and is continuous with the bottom surface of the processing chamber at the same height without creating a step. At the edge line, a plurality of exhaust holes for connecting the exhaust channel and the internal space are arranged at intervals along the edge line. as well as An exhaust channel, which communicates with the buffer channel and applies an intake pressure, is used to exhaust gas flowing into the suction channel through the buffer channel. The through holes are elongated holes in the shape of slits, and a plurality of the through holes are arranged along the periphery of the processing chamber, with the length of the elongated holes in the portion closer to the discharge channel being less than the length of the elongated holes in the portion farther from the discharge channel.

2. The substrate processing apparatus as claimed in claim 1, characterized in that, The buffer channel uses the side of the exhaust channel as the partition wall and is arranged in a ring shape on at least one of the outer and inner sides of the exhaust channel.

3. The substrate processing apparatus as claimed in claim 1, characterized in that, The buffer channel uses the bottom surface of the exhaust channel as the partition wall and is arranged in a ring on the lower side of the exhaust channel.

4. The substrate processing apparatus as claimed in claim 1, characterized in that, The sum of the opening cross-sections of the through holes is greater than the sum of the opening cross-sections of the extraction holes.

5. The substrate processing apparatus as claimed in claim 1, characterized in that, At least one of the through hole and the extraction hole is formed into a tapered shape with a cross-section that gradually decreases towards the discharge channel.

6. The substrate processing apparatus as claimed in claim 1, characterized in that, A barrier wall is formed between the buffer channel and the discharge channel, and a plurality of discharge holes are formed through the barrier wall, the discharge holes being used to connect the buffer channel and the discharge channel.

7. The substrate processing apparatus as claimed in claim 1, characterized in that, An Nth buffer channel is arranged between the buffer channel and the discharge channel, so that the gas flowing into the extraction channel passes through the buffer channel and the Nth buffer channel in sequence, and is discharged through the discharge channel.

8. The substrate processing apparatus as claimed in claim 1, characterized in that, Further includes: An annular channel component, formed as a ring with the top panel and the partition wall, is fitted around a recessed portion on the side of the processing chamber. The annular channel component is used to form the air extraction channel and the buffer channel.

9. The substrate processing apparatus as claimed in claim 8, characterized in that, The annular channel component includes a baffle plate located between the buffer channel and the discharge channel and having multiple discharge holes.

10. The substrate processing apparatus according to any one of claims 1 to 9, characterized in that, At least one of the exhaust channel and the buffer channel forms a passage with a constant cross-section around the perimeter of the interior space.

11. The substrate processing apparatus according to any one of claims 1 to 9, characterized in that, The base is circular, and the interval between the outer peripheral surface of the base and the inner peripheral surface of the internal space is formed constantly along the circumferential direction of the side.

12. The substrate processing apparatus according to any one of claims 1 to 9, characterized in that, The second processing room has a second internal space and is arranged side by side with the processing room. The second base is used to place the second substrate in the second internal space; The second spray head supplies process gas from the upper side of the second substrate placed on the second base; The second exhaust channel is formed in a continuous annular downward recess around the second processing chamber on the bottom surface of the second processing chamber, and has a second exhaust hole communicating with the second internal space. as well as The second buffer channel is separated from the second air extraction channel by a second partition wall and is connected through a through hole in the second partition wall. The second buffer channel is connected to the discharge channel.

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